CN108172663B - A packaging method and packaging structure of a ZnMgO solar-blind ultraviolet detector - Google Patents

Abstract

This application provides a packaging method and packaging structure of a ZnMgO solar-blind ultraviolet detector. The chip of the ZnMgO solar-blind ultraviolet detector is fixed on the base, and the interdigitated electrodes are led out by metal wires as the packaging structure of the ZnMgO solar-blind ultraviolet detector. Then package the ZnMgO solar-blind UV detector chip with UV-permeable packaging glue, and use epoxy resin to package the exposed metal wires and connecting parts to form a complete ZnMgO solar-blind UV detector package The structure is convenient for use in areas outside the laboratory, and the application range of the ZnMgO solar-blind ultraviolet detector chip is expanded, making the ZnMgO solar-blind ultraviolet detector chip more practical. The performance parameters are stable when the device is used exposed to the atmosphere. The pins drawn out at the same time make the device plug and play, overcoming the weakness that unpackaged chips can only be tested in the laboratory.

Description

A packaging method and packaging structure of a ZnMgO solar-blind ultraviolet detector

technical field

The invention belongs to the technical field of semiconductor photodetector manufacture, and in particular relates to a packaging method and packaging structure of a ZnMgO solar-blind ultraviolet detector.

Background technique

Ultraviolet detection technology can be used in military communications, missile tail flame detection, fire early warning, environmental monitoring, biological effects, etc., and has a wide range of applications in both military and civilian applications. Due to the strong absorption of the atmosphere, ultraviolet rays with a wavelength below 280nm in solar radiation are almost non-existent on the surface of the earth. This ultraviolet band is vividly called the solar blind band. The solar-blind ultraviolet detector working in this band is not interfered by solar radiation, has higher sensitivity, and has outstanding advantages in weak signal detection.

At present, the ultraviolet detectors that have been put into commercial use mainly include silicon detectors, photomultiplier tubes and semiconductor detectors. Silicon-based ultraviolet photocells need to be accompanied by filters, and photomultiplier tubes need to work at high voltages, and they are bulky, low in efficiency, easy to damage, and high in cost, which has certain limitations for practical applications. Compared with silicon detectors and photomultiplier tubes, semiconductor materials have attracted much attention because of their advantages such as portability, low cost, and high responsivity.

At present, the semiconductor materials that have been studied more mainly include the alloy AlGaN of the III-V group and the alloy ZnMgO of the II-VI group. At present, GaN can widen the energy band to the solar blind zone by doping aluminum, and make detectors with structures such as MSM and p-n. However, the growth temperature of AlGaN is high, and the crystal quality of the alloy with high aluminum composition is poor. ZnMgO has a wide bandgap adjustment range (from 3.37eV to 7.8eV), strong radiation resistance, high electron saturation drift velocity, matching single crystal substrate (ZnO and MgO), easy synthesis, non-toxic and harmless , abundant resources and environmental friendliness, it is one of the candidate materials for the preparation of wide bandgap ultraviolet detectors.

Many high-performance ultraviolet detectors have been prepared in the prior art, but at present, there are only chips on the substrate of ultraviolet detectors, which can only be used for parameter testing in the laboratory, and cannot be widely used without packaging. Therefore, packaging technology is an obstacle restricting the practical application of ZnMgO solar-blind UV detectors.

Contents of the invention

In view of this, the present invention provides a packaging method and packaging structure of a ZnMgO solar-blind ultraviolet detector to solve the problem that ZnMgO solar-blind ultraviolet detector chips cannot be practically used in the prior art.

To achieve the above object, the present invention provides the following technical solutions:

A method for encapsulating a ZnMgO solar-blind ultraviolet detector, comprising:

A base, a ZnMgO solar-blind ultraviolet detector chip, two metal wires, epoxy resin and encapsulation glue are provided, the base includes a first surface and a second surface oppositely arranged, and the first surface and the second surface are connected The side of the surface; the ZnMgO sun-blind ultraviolet detector chip includes a substrate, a ZnMgO layer, an interdigitated electrode structure and two indium particles; the packaging glue is a packaging glue that can pass through ultraviolet rays;

Fixing the ZnMgO solar-blind ultraviolet detector chip on the first surface of the base;

making a through hole through the side surface and the first surface on the base;

passing two metal wires through the through hole, the first ends of the metal wires protrude from the first surface, and the second ends of the metal wires protrude from the side;

The ends of the first ends of the two metal wires are respectively connected to one of the indium grains, and the second ends of the metal wires are used as pins of the ZnMgO solar-blind ultraviolet detector, wherein the metal wires The non-end portion of the first end is overhead above the ZnMgO solar-blind ultraviolet detector chip and the base;

Dot the epoxy resin at the non-end of the first end of the metal wire, the epoxy resin covers the metal wire on the side of the first surface away from the second surface, and the first through-hole openings on the surface;

The interdigitated electrodes of the interdigitated electrode structure of the ZnMgO solar-blind ultraviolet detector chip are covered with the packaging glue.

Preferably, the making a through hole on the base through the side surface and the first surface specifically includes:

using a drill to drill two first holes on the first surface of the base, the axes of the first holes are perpendicular to the first surface;

drilling two second holes on the side of the base with a drill bit, the axes of the second holes being perpendicular to the side;

And the two second holes communicate with the two first holes one by one to form two through holes.

Preferably, passing the two metal wires through the through hole specifically includes:

passing one of said metal wires through a through hole through which said first hole communicates with said second hole;

Passing another said metal wire through another through hole in which said first hole communicates with said second hole.

Preferably, the connecting the ends of the first ends of the two metal wires to one of the indium particles respectively includes:

Press the end of the first end of one of the metal wires onto one of the indium grains, and the non-end position of the first end of the metal wire is suspended between the ZnMgO solar-blind ultraviolet detector chip and the above the base;

using conductive glue dots on the contact position between the metal wire and the indium particles;

Place the base, the ZnMgO solar-blind ultraviolet detector chip, the two metal wires and the conductive glue in an oven, and bake at a temperature of 50°C-200°C for 2 hours-48 hours, including endpoint values .

Preferably, the interdigitated electrode of the interdigitated electrode structure of the ZnMgO sun-blind ultraviolet detector chip covered with the encapsulant specifically includes:

Apply the encapsulation glue on the interdigitated area of the ZnMgO sun-blind ultraviolet detector chip;

Place in an oven and bake at a temperature of 50°C to 200°C for 2 hours to 48 hours, including endpoints.

Preferably, the fixing the ZnMgO solar-blind ultraviolet detector chip on the first surface of the base specifically includes:

The ZnMgO solar-blind ultraviolet detector chip is adhered to the first surface of the base by adhesive.

Preferably, in the providing the substrate and the ZnMgO solar-blind ultraviolet detector chip, providing the ZnMgO solar-blind ultraviolet detector chip specifically includes:

provide the substrate;

growing a layer of ZnMgO epitaxially on one surface of the substrate;

Evaporated metal electrodes;

Photoetching the metal electrode to form two interdigital electrode structures, the interdigital electrode structure includes a plurality of interdigital electrodes arranged in parallel and a connection perpendicular to the interdigital electrodes and connecting the plurality of interdigital electrodes department;

An indium grain is formed on the connecting portion of the two interdigitated electrode structures respectively.

The present invention also provides a packaging structure of a ZnMgO solar-blind ultraviolet detector, which is formed by applying any of the packaging methods described above. The packaging structure of the ZnMgO solar-blind ultraviolet detector includes:

A base, the base includes a first surface and a second surface opposite to each other, and a side surface connecting the first surface and the second surface, and the base also includes a passage through the side surface and the first surface hole;

A ZnMgO solar-blind ultraviolet detector chip fixed on the first surface of the base, the ZnMgO solar-blind ultraviolet detector chip comprising a substrate, a ZnMgO layer, an interdigitated electrode structure and two indium particles;

Two metal wires, each of the metal wires passes through the through hole, and the end is electrically connected to one of the indium grains, and the non-end position is suspended between the ZnMgO solar-blind ultraviolet detector chip and the base above;

Epoxy resin, the epoxy resin covering the metal wire on the side of the first surface away from the second surface and the through hole on the first surface;

An ultraviolet-permeable encapsulation glue, the encapsulation glue covers the ZnMgO solar-blind ultraviolet detector chip, the metal wire on the side of the first surface away from the second surface, and the through-hole on the first surface. orifice.

Preferably, the metal wire is one of aluminum wire, gold wire, silver wire, stainless steel wire, copper wire, nickel wire, and iron wire.

Preferably, the packaging glue is organic silica gel.

It can be seen from the above-mentioned technical scheme that the packaging method and packaging structure of the ZnMgO solar-blind ultraviolet detector provided by the present invention is to fix the ZnMgO solar-blind ultraviolet detector chip on the base, and then lead the interdigitated electrodes out by the metal wire as the ZnMgO solar-blind ultraviolet detector chip. The pins of the blind UV detector packaging structure are then packaged with the ZnMgO solar-blind UV detector chip through the UV-permeable packaging glue, and the exposed metal wires and connecting parts are packaged with epoxy resin to form a complete ZnMgO solar-blind The packaging structure of the ultraviolet detector is convenient for use in areas other than the laboratory, and expands the application range of the ZnMgO solar-blind ultraviolet detector chip, making the ZnMgO solar-blind ultraviolet detector chip more practical.

The encapsulation method provided by the invention has simple process and easy control of the reaction process, and can conveniently and quickly prepare a packaged ZnMgO sun-blind ultraviolet detection device. When the device is exposed to the atmosphere, the performance parameters are stable. The pins drawn out at the same time make the device plug-and-play, overcome the weakness that unpackaged chips can only be tested in the laboratory, and lay the foundation for the device to be practical.

Description of drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only It is an embodiment of the present invention, and those skilled in the art can also obtain other drawings according to the provided drawings without creative work.

Fig. 1 is the flowchart of a kind of ZnMgO sun-blind ultraviolet detector packaging method provided by the embodiment of the present invention;

Figure 2-Figure 4 is a schematic diagram of the preparation process of the ZnMgO solar-blind ultraviolet detector chip provided by the embodiment of the present invention;

5 is a schematic diagram of the interdigitated electrodes of the ZnMgO sun-blind ultraviolet detector chip provided by the embodiment of the present invention;

Fig. 6 is a schematic diagram of drilling a plexiglass plate during the packaging process provided by the embodiment of the present invention;

Fig. 7 is a cross-sectional view of drilling a plexiglass plate during the packaging process provided by the embodiment of the present invention;

8 is a schematic diagram of aluminum wire leads in the packaging process provided by the embodiment of the present invention;

Fig. 9 is a sectional view corresponding to Fig. 8;

Fig. 10 is a schematic diagram of coating silver glue in the encapsulation process provided by the embodiment of the present invention;

Figure 11 is a cross-sectional view corresponding to Figure 10;

Figure 12 is a schematic diagram of coating epoxy resin during the packaging process provided by the embodiment of the present invention;

Figure 13 is a cross-sectional view corresponding to Figure 12;

Fig. 14 is a schematic diagram of coating encapsulation glue during the encapsulation process provided by the embodiment of the present invention;

Fig. 15 is a sectional view corresponding to Fig. 14;

Fig. 16 is the current-voltage (I-V) curve of the packaged ZnMgO solar-blind ultraviolet detector provided by the embodiment of the present invention;

Figure 17 is the photoresponsivity curve of the packaged ZnMgO solar-blind ultraviolet detector provided by the embodiment of the present invention;

Fig. 18 is the response time curve of the packaged ZnMgO solar-blind ultraviolet detector provided by the embodiment of the present invention.

Detailed ways

As mentioned in the background technology section, the ZnMgO solar-blind ultraviolet detectors in the prior art are mainly used in laboratories, basically only in the chip stage, and there is no packaging structure, so they cannot be widely used.

There are already some electronic device packaging methods in the prior art, most of which use gold wire ball bonding technology to bond the electrodes on the chip and the pins on the shell with gold wires. Then cover the metal case with a quartz plate.

The inventors found that although this method is widely used, there are certain problems. First, this method has certain requirements for welding equipment and welding technology. Second, there are also requirements for the firmness and thickness of the gold electrodes on the chip. If the gold electrodes are not strong enough or are too thin, the gold electrodes may peel off during the gold wire ball bonding process. Third, the use of metal shells and quartz plates is expensive, which is not conducive to cost control. Fourth, after the device is subjected to severe vibration and shock, the gold wire may be broken or desoldered, making the device invalid.

Based on this, the present invention provides a method for encapsulating a ZnMgO solar-blind ultraviolet detector, comprising:

A base, a ZnMgO solar-blind ultraviolet detector chip, two metal wires, epoxy resin and encapsulation glue are provided, the base includes a first surface and a second surface oppositely arranged, and the first surface and the second surface are connected The side of the surface; the ZnMgO sun-blind ultraviolet detector chip includes a substrate, a ZnMgO layer, an interdigitated electrode structure and two indium particles; the packaging glue is a packaging glue that can pass through ultraviolet rays;

Fixing the ZnMgO solar-blind ultraviolet detector chip on the first surface of the base;

making a through hole through the side surface and the first surface on the base;

passing two metal wires through the through hole, the first ends of the metal wires protrude from the first surface, and the second ends of the metal wires protrude from the side;

The ends of the first ends of the two metal wires are respectively connected to one of the indium grains, and the second ends of the metal wires are used as pins of the ZnMgO solar-blind ultraviolet detector, wherein the metal wires The non-end portion of the first end is overhead above the ZnMgO solar-blind ultraviolet detector chip and the base;

Dot the epoxy resin at the non-end of the first end of the metal wire, the epoxy resin covers the metal wire on the side of the first surface away from the second surface, and the first through-hole openings on the surface;

The interdigitated electrodes of the interdigitated electrode structure of the ZnMgO solar-blind ultraviolet detector chip are covered with the packaging glue.

The packaging method of the ZnMgO solar-blind ultraviolet detector provided by the present invention is to fix the chip of the ZnMgO solar-blind ultraviolet detector on the base, and then lead the interdigitated electrodes by metal wires as pins of the packaging structure of the ZnMgO solar-blind ultraviolet detector, and then pass The ZnMgO solar-blind ultraviolet detector chip can be encapsulated with ultraviolet-ray-permeable packaging glue, and then the exposed metal wire and the connecting part are encapsulated with epoxy resin to form a complete ZnMgO solar-blind ultraviolet detector packaging structure, which is convenient for use in The use in areas outside the laboratory expands the scope of use of the ZnMgO solar-blind ultraviolet detector chip, making the ZnMgO solar-blind ultraviolet detector chip more practical.

In addition, the present invention has cheap materials and simple method, and at the same time directly uses aluminum wires as wires without gold wire bonding, which overcomes the above-mentioned problems in the prior art of using gold wire ball bonding technology.

The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

Please refer to Fig. 1 for a packaging method of a ZnMgO solar-blind ultraviolet detector provided by an embodiment of the present invention, including:

S101: Provide a base, a ZnMgO solar-blind ultraviolet detector chip, two metal wires, epoxy resin, and packaging glue, the base includes a first surface and a second surface that are oppositely arranged, and connect the first surface and the The side of the second surface; the ZnMgO sun-blind ultraviolet detector chip includes a substrate, a ZnMgO layer, an interdigitated electrode structure and two indium particles; the packaging glue is a packaging glue that can pass through ultraviolet rays;

The manufacturing method of the ZnMgO solar-blind ultraviolet detector chip is not limited in this embodiment. Optionally, please refer to FIG. 2-FIG. 4, including: providing a substrate 1; layer ZnMgO 2; vapor-deposited metal electrodes; photolithographic metal electrodes to form two interdigital electrode structures 3, the interdigital electrode structure 3 includes a plurality of interdigital electrodes 31 arranged in parallel and perpendicular to the interdigital electrodes, and connects a plurality of interdigital electrodes The connection portion 32 of the finger electrodes; one indium particle 4 is respectively formed on the connection portion of the two interdigital electrode structures.

It should be noted that the specific material of the substrate is not limited in this embodiment, and optionally, the substrate is a sapphire substrate. The specific process steps of the ZnMgO sun-blind ultraviolet detector chip are not limited in this embodiment. Optionally, when growing a ZnMgO layer on the surface of the substrate 1, a molecular beam epitaxy device is used to grow a ZnMgO thin film material. Evaporating the metal electrode is mainly evaporating a 5nm-300nm thick gold electrode through a thermal evaporation process, preferably 50nm thick. In other embodiments of the present invention, the process for growing the ZnMgO layer may also be magnetron sputtering or metal organic compound chemical vapor deposition (MOCVD), etc., which are not limited in this embodiment.

The interdigitated electrodes are obtained by photoetching the gold electrodes. It should be noted that the specific size of the ZnMgO sun-blind ultraviolet detector chip and the specific dimensions of the interdigitated electrodes are not limited in this embodiment. Optionally, as shown in FIG. 5 Indicates the size and specific parameters of the interdigitated electrodes. The finger spacing D of the interdigitated electrodes can be 2 μm-10 μm, the logarithm G of the interdigitated fingers is 10 pairs-25 pairs, and the length L of the interdigitated fingers is 0.5mm-2mm. The width W of the finger is 2 μm-10 μm. More specifically, the interdigital electrode spacing D can be 5 μm, the logarithm G of the interdigital fingers is 10 pairs, the length L of the interdigital fingers is 0.5 mm, and the width W of the interdigital fingers is 5 μm. . Finally, a ZnMgO sun-blind ultraviolet detector chip with an MSM (metal-semiconductor-metal) structure is obtained by pressing indium grains 4 on the connecting portion of the interdigitated electrodes.

In this embodiment, the specific material of the base is not limited, as long as it can play the role of packaging and insulation. Optionally, the base is an insulating plate such as a plexiglass plate, a wooden board or a rubber plate. In this embodiment, the preferred The base is a plexiglass plate. In order to cooperate with the size of the above-mentioned ZnMgO solar-blind ultraviolet detector chip, the specific size of the base provided in this embodiment is as shown in Figure 6, the length L1 of the base 5 can be 5mm-50mm; the width W1 can be 5mm-50mm and The thickness H1 may be 1 mm-10 mm. In this embodiment, the length, width and thickness of the base 5 are 20 mm, 20 mm, and 3 mm, respectively.

S102: fixing the ZnMgO solar-blind ultraviolet detector chip on the first surface of the base;

In this embodiment, the fixing the ZnMgO solar-blind ultraviolet detector chip on the first surface of the base specifically includes: using an adhesive to glue the ZnMgO solar-blind ultraviolet detector chip on the first surface of the base a surface.

It should be noted that the specific form of the adhesive is not limited in this embodiment, as long as the ZnMgO solar-blind ultraviolet detector chip can be fixed on the surface of the base. Optionally, the adhesive may be epoxy resin, AB glue, etc. In some embodiments of the present invention, adhesive tape may also be used to fix the ZnMgO solar-blind ultraviolet detector chip on the surface of the base.

S103: Making a through hole penetrating through the side surface and the first surface on the base;

Please continue to refer to FIG. 6 , making through holes through the side and the first surface on the base, specifically including: using a drill to drill two first holes 51 on the first surface of the base, and the axes of the first holes 51 are perpendicular to the first surface; use a drill to drill two second holes 52 on the side of the base, the axis of the second hole 52 is perpendicular to the side; and the two second holes 52 communicate with the two first holes 51 one by one to form two through holes . Specifically, two holes are drilled on the side of the plexiglass plate 5 using a drill with a diameter D2 of 0.1 mm-5 mm. Then punch two holes with a diameter D1 of 0.1mm-5mm on the first surface, the two holes on the first surface are connected with the bottoms of the two holes punched on the side to form through holes, as shown in Figure 7, for all Schematic cross-sectional view of the through-hole. It should be noted that the drilling order of the first holes on the first surface and the second holes on the side can be reversed, which is not limited in this embodiment.

S104: Pass the two metal wires through the through hole, the first end of the metal wire protrudes from the first surface, and the second end of the metal wire protrudes from the side surface;

In the present embodiment, the perforation method of passing the two metal wires through the through holes is not limited, and the metal wire can first pass through the first hole on the first surface of the organic glass plate 5, and then pass through the organic glass plate. 5. The second hole on the upper side, optional in this embodiment, the metal wire first passes through the second hole on the side, and then passes through the first hole on the first surface, that is, the metal wire is passed through the hole along the side In, and then pass out from the hole on the first surface, as shown in Figure 8 and Figure 9, one of the metal wires 61 is passed through a through hole in which the first hole communicates with the second hole; Pass the other metal wire 62 through another through hole in which the first hole communicates with the second hole.

It should be noted that the diameter of the metal wire is smaller than the diameter of the through hole, and the diameter of the metal wire is optionally 0.1mm-4mm; the material of the metal wire is not limited in this embodiment, as long as It only needs to be able to conduct electricity. Optionally, the metal wire can be aluminum wire, gold wire, silver wire, stainless steel wire, copper wire, nickel wire, iron wire or other conductive metal wire.

It should be noted that the order of step S102, step S103 and step S104 in this embodiment can be exchanged, that is, punching holes on the base and threading metal wires can be placed before the step of fixing the ZnMgO sun-blind ultraviolet detector. There is no limit to this.

S105: Connect the ends of the first ends of the two metal wires to one of the indium grains respectively, and the second ends of the metal wires serve as pins of the ZnMgO solar-blind ultraviolet detector, wherein the metal The non-end of the first end of the wire is overhead above the ZnMgO solar-blind ultraviolet detector chip and the base;

The connecting the ends of the first ends of the two metal wires to one of the indium particles respectively includes: respectively pressing the ends of the first ends of one of the metal wires to one of the indium particles Above, the non-end position of the first end of the metal wire is overhead above the ZnMgO solar-blind ultraviolet detector chip and the base; as shown in the direction of the dotted arrow in Figure 8, optional, in this In the embodiment, pliers can be used to break and bend the metal wire, and then press the indium grain on the chip. It should be noted that, in this embodiment, the first end of the metal wire is not all pressed on the chip, but bent out of a section arc shape, only the tip presses the indium particles on the chip, and the specific structure can be seen in Figure 10 and Figure 11; use conductive glue dots on the contact position between the metal wire and the indium particles; place the base, the The ZnMgO solar-blind ultraviolet detector chip, the two metal wires and the conductive adhesive are placed in an oven, and baked at a temperature of 50°C-200°C for 2 hours-48 hours, including endpoint values.

It should be noted that the specific material of the conductive glue is not limited in this embodiment, and the conductive glue is optionally silver glue. Please refer to FIG. 10 and FIG. 11 , which show the area where the silver glue is applied, and the silver glue 7 is only applied at the contact position between the indium particles and the metal wire.

S106: Put the epoxy resin on the non-end of the first end of the metal wire, the epoxy resin covers the metal wire on the side of the first surface away from the second surface, and the a through-hole opening on the first surface;

Since the ZnMgO solar-blind ultraviolet detector is used to detect solar-blind ultraviolet light waves, if a large area is covered with epoxy resin, it will absorb solar-blind ultraviolet rays strongly, which will affect the use of the detector. Therefore, in this embodiment, only metal wires The exposed area is covered with epoxy resin, as shown in Figure 12 and Figure 3, use 9 points of epoxy resin at the connection between the wire and the insulating base, and at the same time use 9 points of epoxy resin at the bend of the wire, so that the epoxy resin Naturally slide down to the connection between the metal wire and the chip, and strictly control the amount of epoxy resin added to prevent the epoxy resin from flowing to the finger area of the chip. Bake in an oven at 50°C-200°C for 2 hours to 48 hours.

S107: Cover the interdigitated electrodes of the interdigitated electrode structure of the ZnMgO solar-blind ultraviolet detector chip with the packaging glue.

In this embodiment, encapsulation with encapsulation glue specifically includes: applying the encapsulation glue on the interdigital area of the ZnMgO sun-blind ultraviolet detector chip; placing it in an oven and baking at a temperature of 50°C-200°C for 2 hours -48 hours, including endpoint values.

Since the epoxy resin has already covered a part of the metal, the encapsulation adhesive in this embodiment only needs to encapsulate the chip area. For the convenience of processing, it is optional to cover more areas with the encapsulation adhesive as shown in the dotted line in Figure 14. Area A, as long as It is sufficient that an insulating covering electrical connection portion can be formed. As shown in FIG. 15 , the encapsulation glue 8 covers the interdigital region of the ZnMgO solar-blind ultraviolet detector chip, so as to protect the interdigital region of the ZnMgO solar-blind ultraviolet detector chip and form an insulating layer.

It should be noted that the encapsulation glue is an encapsulation glue that can pass through ultraviolet rays, so as to avoid excessive absorption of ultraviolet rays and affect the performance of the ZnMgO solar-blind ultraviolet detector. Optionally in this embodiment, the encapsulating glue is organic silica gel, and in other embodiments of the present invention, it may also be other encapsulating glue with higher ultraviolet transmittance. In the embodiment of the present invention, organic silica gel that can transmit ultraviolet light is used for packaging, which plays the role of sealing the chip and fixing the metal wire, and finally a packaged ZnMgO solar-blind ultraviolet detection device is obtained.

The encapsulation method provided by the invention has a simple process, and the reaction process is easy to control, and a packaged ZnMgO sun-blind ultraviolet detection device can be prepared conveniently and quickly. When the device is exposed to the atmosphere, the performance parameters are stable. The pins drawn out at the same time make the device plug-and-play, overcome the weakness that unpackaged chips can only be tested in the laboratory, and lay the foundation for the device to be practical.

The embodiment of the present invention also provides a ZnMgO solar-blind ultraviolet detector packaging structure, which is formed by the above-mentioned ZnMgO solar-blind ultraviolet detector packaging method, as shown in Figure 14 and Figure 15. The packaging structure includes:

A base 5, the base 5 includes a first surface and a second surface oppositely arranged, and a side connecting the first surface and the second surface, and the base 5 also includes a Surface through holes (51, 52);

A ZnMgO solar-blind ultraviolet detector chip 10 fixed on the first surface of the base 5, the ZnMgO solar-blind ultraviolet detector chip comprising a substrate, a ZnMgO solar-blind layer, an interdigitated electrode structure and two indium particles 4;

Two metal wires (61, 62), each of the metal wires (61, 62) passes through the through hole (51, 52), and the end is electrically connected to an indium grain 4, and the non-end position is overhead ZnMgO sun-blind ultraviolet detector chip 10 and the top of base 5;

Epoxy resin 9, the epoxy resin 9 covers the metal wire 61 on the side of the first surface away from the second surface, and the through hole on the first surface, that is, the first through hole 51 the through hole;

An ultraviolet-permeable encapsulation glue 8, the encapsulation glue 8 covers the interdigitated area of the ZnMgO solar-blind ultraviolet detector chip.

In this embodiment, the material of the metal wire and the material of the packaging glue are not limited. Optionally, the metal wire is one of gold wire, silver wire, stainless steel wire, copper wire, nickel wire, and iron wire. The encapsulating glue is organic silica gel.

The inventor measures the photoresponse characteristic curve of the ZnMgO solar-blind ultraviolet detector packaging structure by using a photoresponse testing system with a UV-enhanced xenon lamp and a lock-in amplifier, and uses a semiconductor analyzer to test the dark current of the ZnMgO solar-blind ultraviolet detector packaging structure. The response time of the device was tested using a laser light source and an oscilloscope.

The following parameters of the packaging structure of the ZnMgO solar-blind ultraviolet detector are obtained:

As shown in Figure 16, it is the current-voltage (I-V) curve of the packaged ZnMgO solar-blind ultraviolet detector. It can be seen from the curve that the dark current of the packaged device is 0.7pA when the bias voltage is 10V. After repeatedly bending and pulling the pins of the packaging structure of the ZnMgO solar-blind ultraviolet detector and performing strong shocks on the packaging structure of the ZnMgO solar-blind ultraviolet detector, the measurement was continued and it was found that the measured parameters did not change. , the corresponding dark current is still 0.7pA.

As shown in Figure 17, it is the photoresponsivity curve of the packaged ZnMgO solar-blind ultraviolet detector under the working condition of 10V voltage. From this curve, it can be seen that the peak responsivity of the packaged device is at 10V bias It is 3.75A/W. After repeatedly bending and pulling the pins of the device and subjecting the device to a strong vibration shock, the measurement was continued, and it was found that the measured parameters did not change.

As shown in Figure 18, it is the response time curve of the packaged ZnMgO solar-blind ultraviolet detector under 10V voltage operating conditions (the response time is that the current when the ultraviolet light is turned off is X amperes, then when the current is from 0.9X amperes It can be seen from the curve that when the bias voltage is 10V, the response time of the packaged device is 4.6 milliseconds, which is the time of t2-t1 in the figure. After repeatedly bending and pulling the pins of the device and subjecting the device to a strong vibration shock, the measurement was continued, and it was found that the measured parameters did not change.

Based on the above, it can be proved that the packaging structure of the ZnMgO solar-blind ultraviolet detector provided by the present invention has better performance and stability.

The packaging method and packaging structure of the ZnMgO solar-blind ultraviolet detector provided by the present invention, by fixing the ZnMgO solar-blind ultraviolet detector chip on the base, and then leading the interdigitated electrodes by metal wires as the packaging structure of the ZnMgO solar-blind ultraviolet detector pins, and then the ZnMgO solar-blind ultraviolet detector chip is packaged with an ultraviolet-permeable packaging glue, and the exposed metal wire and the connecting part are packaged with epoxy resin, thereby forming a complete ZnMgO solar-blind ultraviolet detector packaging structure, so that The use in areas outside the laboratory expands the application range of the ZnMgO solar-blind ultraviolet detector chip, making the ZnMgO solar-blind ultraviolet detector chip more practical.

Another remarkable progress of the packaging method and packaging structure of the ZnMgO solar-blind ultraviolet detector provided by the present invention is that the materials used are cheap, the method is simple, and gold wire bonding is not required, which overcomes the problems existing in the traditional packaging method. At the same time, the encapsulation glue for sealing the chip is separated from the epoxy resin for fixing the chip, so as to avoid the problem that the device responsivity decreases caused by using the encapsulation glue alone.

It should be noted that each embodiment in this specification is described in a progressive manner, and each embodiment focuses on the differences from other embodiments. For the same and similar parts in each embodiment, refer to each other, that is, Can.

The above description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Therefore, the present invention will not be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (10)

1. A packaging method for a ZnMgO solar-blind ultraviolet detector, characterized in that it comprises: A base, a ZnMgO solar-blind ultraviolet detector chip, two metal wires, epoxy resin and encapsulation glue are provided, the base includes a first surface and a second surface oppositely arranged, and the first surface and the second surface are connected The side of the surface; the ZnMgO sun-blind ultraviolet detector chip includes a substrate, a ZnMgO layer, an interdigitated electrode structure and two indium particles; the packaging glue is a packaging glue that can pass through ultraviolet rays; Fixing the ZnMgO solar-blind ultraviolet detector chip on the first surface of the base; Make a through hole through the side surface and the first surface on the base, the through hole includes a first hole and a second hole, and the axis of the first hole and the axis of the second hole are mutually vertical; passing two metal wires through the through hole, the first ends of the metal wires protrude from the first surface, and the second ends of the metal wires protrude from the side; The ends of the first ends of the two metal wires are respectively connected to one of the indium grains, and the second ends of the metal wires are used as pins of the ZnMgO solar-blind ultraviolet detector, wherein the metal wires The non-end portion of the first end is overhead above the ZnMgO solar-blind ultraviolet detector chip and the base; Dot the epoxy resin at the non-end of the first end of the metal wire, the epoxy resin covers the metal wire on the side of the first surface away from the second surface, and the first through-hole openings on the surface; The interdigitated electrodes of the interdigitated electrode structure of the ZnMgO solar-blind ultraviolet detector chip are covered with the packaging glue. 2. the packaging method of ZnMgO solar-blind ultraviolet detector according to claim 1, is characterized in that, described making the through hole that runs through described side and described first surface on described base, specifically comprises: using a drill to drill two first holes on the first surface of the base, the axes of the first holes are perpendicular to the first surface; drilling two second holes on the side of the base with a drill bit, the axes of the second holes being perpendicular to the side; And the two second holes communicate with the two first holes one by one to form two through holes. 3. the packaging method of ZnMgO solar-blind ultraviolet detector according to claim 2, is characterized in that, described two described metal wires are passed through described through hole, specifically comprise: passing one of said metal wires through a through hole through which said first hole communicates with said second hole; Passing another said metal wire through another through hole in which said first hole communicates with said second hole. 4. The packaging method of the ZnMgO solar-blind ultraviolet detector according to claim 2, wherein the ends of the first ends of the two metal wires are respectively connected to one of the indium grains, specifically comprising : Press the end of the first end of one of the metal wires onto one of the indium grains, and the non-end position of the first end of the metal wire is suspended between the ZnMgO solar-blind ultraviolet detector chip and the above the base; using conductive glue dots on the contact position between the metal wire and the indium particles; Place the base, the ZnMgO solar-blind ultraviolet detector chip, the two metal wires and the conductive glue in an oven, and bake at a temperature of 50°C-200°C for 2 hours-48 hours, including endpoint values . 5. the encapsulation method of ZnMgO sun-blind ultraviolet detector according to claim 2, is characterized in that, described adopting described encapsulating glue to cover the interdigitated electrode structure of the interdigitated electrode structure of described ZnMgO sun-blind ultraviolet detector chip, Specifically include: Apply the encapsulation glue on the interdigitated area of the ZnMgO sun-blind ultraviolet detector chip; Place in an oven and bake at a temperature of 50°C to 200°C for 2 hours to 48 hours, including endpoints. 6. the packaging method of ZnMgO solar-blind ultraviolet detector according to claim 2, is characterized in that, described ZnMgO solar-blind ultraviolet detector chip is fixed on the first surface of described base, specifically comprises: The ZnMgO solar-blind ultraviolet detector chip is adhered to the first surface of the base by adhesive. 7. according to the packaging method of the ZnMgO solar-blind ultraviolet detector described in any one of claim 1-6, it is characterized in that, in the described substrate and ZnMgO solar-blind ultraviolet detector chip, ZnMgO solar-blind ultraviolet detector is provided Chips specifically include: provide the substrate; growing a layer of ZnMgO epitaxially on one surface of the substrate; Evaporated metal electrodes; Photoetching the metal electrode to form two interdigital electrode structures, the interdigital electrode structure includes a plurality of interdigital electrodes arranged in parallel and a connection perpendicular to the interdigital electrodes and connecting the plurality of interdigital electrodes department; An indium grain is formed on the connecting portion of the two interdigitated electrode structures respectively. 8. A packaging structure of ZnMgO solar-blind ultraviolet detector, characterized in that, it is formed by applying the packaging method described in any one of claims 1-7, and the packaging structure of said ZnMgO solar-blind ultraviolet detector comprises: A base, the base includes a first surface and a second surface opposite to each other, and a side surface connecting the first surface and the second surface, and the base also includes a passage through the side surface and the first surface A hole, the through hole includes a first hole and a second hole, and the axis of the first hole and the axis of the second hole are perpendicular to each other; A ZnMgO solar-blind ultraviolet detector chip fixed on the first surface of the base, the ZnMgO solar-blind ultraviolet detector chip comprising a substrate, a ZnMgO layer, an interdigitated electrode structure and two indium particles; Two metal wires, each of the metal wires passes through the through hole, and the end is electrically connected to one of the indium grains, and the non-end position is suspended between the ZnMgO solar-blind ultraviolet detector chip and the base above; Epoxy resin, the epoxy resin covering the metal wire on the side of the first surface away from the second surface and the through hole on the first surface; An ultraviolet-permeable encapsulation glue, the encapsulation glue covers the ZnMgO solar-blind ultraviolet detector chip, the metal wire on the side of the first surface away from the second surface, and the through-hole on the first surface. orifice. 9. ZnMgO sun-blind ultraviolet detector packaging structure according to claim 8, is characterized in that, described metal wire is a kind of in aluminum wire, gold wire, silver wire, stainless steel wire, copper wire, nickel wire, iron wire . 10. The packaging structure of ZnMgO solar-blind ultraviolet detector according to claim 8, characterized in that, the packaging glue is organic silica gel.