CN108147363B - A kind of separation method of MEMS wafer chip - Google Patents
A kind of separation method of MEMS wafer chip Download PDFInfo
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- CN108147363B CN108147363B CN201711408352.0A CN201711408352A CN108147363B CN 108147363 B CN108147363 B CN 108147363B CN 201711408352 A CN201711408352 A CN 201711408352A CN 108147363 B CN108147363 B CN 108147363B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00865—Multistep processes for the separation of wafers into individual elements
- B81C1/00888—Multistep processes involving only mechanical separation, e.g. grooving followed by cleaving
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00865—Multistep processes for the separation of wafers into individual elements
- B81C1/00896—Temporary protection during separation into individual elements
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Abstract
This application discloses a kind of separation methods of MEMS wafer chip, including carry out scribing to MEMS wafer, mark off multiple chip areas using different Cutting Roads；Protective film is sticked in the position where the Cutting Road, the chip area is kept to be exposed to outside；Sliver is carried out to the MEMS wafer；The protective film is removed, and expansion film is carried out to the MEMS wafer, isolates chip.The separation method of above-mentioned MEMS wafer chip, can reduce separation costs, and avoid adverse effect caused by chipping and silicon slag silicon powder, improve product yield and production efficiency.
Description
Technical field
The invention belongs to MEMS chip technical fields, more particularly to a kind of separation method of MEMS wafer chip.
Background technique
MEMS (MEMS, Micro-Electro-Mechanical System) be a kind of collection microelectric technique and
For micro-processing technology in the system of one, MEMS technology can be by mechanical component, driving part, electric-control system, digital processing system etc.
Be integrated into the tiny cells of an entirety, have it is small, intelligent, executable, can integrate, processing compatibility is good, at low cost etc. all
More advantages.The development of MEMS technology opens a completely new technical field and industry, the micro sensing made using MEMS technology
Device, microactrator, micro parts, Micromechanical Optics device, vacuum microelectronic device, power electronic devices etc. Aeronautics and Astronautics,
Automobile, biomedicine, environmental monitoring, military affairs, Internet of Things etc. suffer from very wide application in fields.Chip isolation technics is
Refer to, utilizes blade cutting (Blade Dicing) or laser cutting (Laser Dicing) or cutting-up (Scratch Dicing) etc.
Mode carries out cutting separation according to the distinctive Cutting Road block of wafer, thus make wafer separate at one one chip, then into
The subsequent encapsulation of row, is fabricated to corresponding device.The micro mechanical structure of MEMS chip mostly use microbridge, cantilever beam, moving parts and
Mass block etc., the type structure bears hydraulic pressure and the ability of air pressure is weaker, must assure that during processing to chip
These cannot be destroyed and determine the micro mechanical structure of chip performance, therefore separate MEMS wafer chip and make chip surface
Not generating the particle for being not easy to remove is particularly important.
Separation for MEMS product has following two ways in the prior art: first is that using technique is cut through entirely, but in this way
If, the rear end seal survey working efficiency of single operation is relatively low, specifically, that is MEMS wafer first carries out structure release just not
Conducive to subsequent cutting operation, because traditional is cut with bath and cleaning process, MEMS structure can be destroyed, or even cause MEMS
Structure is integrally removed from ASIC circuit, and a large amount of silicon bits silicon slag can be generated in cutting process, causes to stain to MEMS structure,
MEMS structure failure is easily led to, or even wafer is caused directly to scrap；Second is that one is use stealth using sliver technique is partly cut through
It is cut by laser (Stealth Dicing), the disadvantage is that equipment is expensive and complex process, invisible laser are cut to wafer Cutting Road
Layout has particular/special requirement, if chip space will be squeezed by being individually for invisible laser cutting design configuration structure, reduces unit area
Chip output, and have strict demand to material in Cutting Road, can only be silicon material, other materials will reflection laser, simultaneously
MEMS wafer fragile structure, reduction process is complicated and is easily destroyed front chip structure, and another kind is carried out using breaking device
Sliver separates chip, and when carrying out sliver using breaking machine, many tiny silicon slag silicon powders out will be collapsed in Cutting Road, these
Silicon slag once falls to MEMS chip surface, will using other physics and chemical method due to the fragility of MEMS chip structure
These particles are difficult to remove, the reliability of wafer yield and subsequent encapsulation is influenced, gluing guarantor first can also be carried out to wafer frontside
Then shield carries out Plasma Dicing cutting, then discharges to MEMS structure, this just needs first to carry out photoetching, however photoetching
Equipment and Plasma Dicing equipment cost are all high.
Summary of the invention
To solve the above problems, can reduce and be separated into the present invention provides a kind of separation method of MEMS wafer chip
This, and adverse effect caused by chipping and silicon slag silicon powder is avoided, improve product yield and production efficiency.
A kind of separation method of MEMS wafer chip provided by the invention, comprising:
Scribing is carried out to MEMS wafer, marks off multiple chip areas using different Cutting Roads；
Protective film is sticked in the position where the Cutting Road, the chip area is kept to be exposed to outside；
Sliver is carried out to the MEMS wafer；
The protective film is removed, and expansion film is carried out to the MEMS wafer, isolates chip.
Preferably, in the separation method of above-mentioned MEMS wafer chip, the position where the Cutting Road is sticked
Protective film are as follows:
UV film is sticked in the position where the Cutting Road.
Preferably, in the separation method of above-mentioned MEMS wafer chip, the removal protective film are as follows:
It is 100mJ/cm using the energy that wavelength is 365nm2To 500mJ/cm2UV film 0.5 minute described in ultraviolet light is extremely
5 minutes, carry out solution UV.
It is preferably, described that expansion film is carried out to the MEMS wafer in the separation method of above-mentioned MEMS wafer chip are as follows:
Expansion film is carried out to the MEMS wafer using film machine is expanded, until adjacent chip spacing range reaches 50 microns extremely
200 microns.
Preferably, in the separation method of above-mentioned MEMS wafer chip, the position where the Cutting Road is sticked
Before protective film, further includes:
The protective film is punched, the hole is corresponding with the size of the chip area and position.
It is preferably, described that scribing is carried out to MEMS wafer in the separation method of above-mentioned MEMS wafer chip are as follows:
To MEMS wafer carry out scribing twice until the Cutting Road with a thickness of the MEMS wafer thickness 10% to
30%.
As can be seen from the above description, the separation method of above-mentioned MEMS wafer chip provided by the invention, due to including MEMS
Wafer carries out scribing, marks off multiple chip areas using different Cutting Roads；Guarantor is sticked in the position where the Cutting Road
Cuticula keeps the chip area to be exposed to outside；Sliver is carried out to the MEMS wafer；The protective film is removed, and to institute
It states MEMS wafer and carries out expansion film, isolate chip, therefore can reduce separation costs, and avoid caused by chipping and silicon slag silicon powder
Adverse effect improves product yield and production efficiency.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is the schematic diagram of the separation method of the first MEMS wafer chip provided by the embodiments of the present application；
Fig. 2 is the MEMS wafer schematic diagram after being thinned；
Fig. 3 is the schematic diagram of the MEMS wafer after scribing；
Fig. 4 is the schematic diagram of the UV film after punching；
Fig. 5 is the schematic diagram after UV film with hole and MEMS wafer fit together；
Fig. 6 is the MEMS wafer schematic diagram removed after UV film and sliver；
Fig. 7 is the MEMS wafer schematic diagram expanded after film.
Specific embodiment
Core of the invention thought is to provide a kind of separation method of MEMS wafer chip, can reduce separation costs,
And adverse effect caused by chipping and silicon slag silicon powder is avoided, improve product yield and production efficiency.
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
As shown in FIG. 1, FIG. 1 is the application realities for the separation method of the first MEMS wafer chip provided by the embodiments of the present application
The schematic diagram of the separation method of the first MEMS wafer chip of example offer is applied, this method comprises the following steps:
S1: scribing is carried out to MEMS wafer, marks off multiple chip areas using different Cutting Roads；
It should be noted that the step can't come out chip cutting, second is that corresponding thickness is reserved in Cutting Road position,
Keeping entire MEMS wafer still is an entirety.
S2: sticking protective film in the position where the Cutting Road, and the chip area is kept to be exposed to outside；
Specifically, can be, but not limited on microscopical workbench is installed to be provided with the MEMS wafer of Cutting Road into
Row contraposition and pasting protective film, in addition to Cutting Road is by pad pasting protection, other regions keep naked state, make to avoid to MEMS area
At adverse effect.
S3: sliver is carried out to the MEMS wafer；
In this case, wafer splits along Cutting Road, and the particle of generation is adhered to by protective film, will not influence MEMS knot
Structure, to improve the yield of MEMS wafer chip.
S4: the protective film is removed, and expansion film is carried out to the MEMS wafer, isolates chip.
Specifically, can use chip picking-up apparatus (Pick and Place) to qualified chip after isolating chip
It is picked up, chip is put into chip storage box and enters subsequent packaging procedures, this can be improved release testing efficiency.
As can be seen from the above description, the separation method of the first MEMS wafer chip provided by the embodiments of the present application, due to
Including carrying out scribing to MEMS wafer, multiple chip areas are marked off using different Cutting Roads；Where the Cutting Road
Protective film is sticked in position, and the chip area is kept to be exposed to outside；Sliver is carried out to the MEMS wafer；Remove the protection
Film, and expansion film is carried out to the MEMS wafer, chip is isolated, therefore can reduce separation costs, and avoid chipping and silicon slag
It is adversely affected caused by silicon powder, improves product yield and production efficiency.
The separation method of second of MEMS wafer chip provided by the embodiments of the present application is in the first above-mentioned MEMS wafer
Further include following technical characteristic on the basis of the separation method of chip:
Stick protective film in the position where the Cutting Road are as follows:
UV film is sticked in the position where the Cutting Road.
This UV film is easier to take off after the uv irradiation, more convenient operation, therefore here can be preferably UV film, but
It is not limited in this film, can also be blue film or other kinds of film.
The separation method of the third MEMS wafer chip provided by the embodiments of the present application is in above-mentioned second of MEMS wafer
Further include following technical characteristic on the basis of the separation method of chip:
The removal protective film are as follows:
It is 100mJ/cm using the energy that wavelength is 365nm2To 500mJ/cm2UV film 0.5 minute described in ultraviolet light is extremely
5 minutes, carry out solution UV.
Protective film is removed by means of which, and the viscosity of UV glue can be reduced to pervious 1%~10%, thus greatly convenient
Protective film is removed, and working efficiency is improved.
The separation method of 4th kind of MEMS wafer chip provided by the embodiments of the present application, is in the third above-mentioned MEMS wafer
Further include following technical characteristic on the basis of the separation method of chip:
It is described that expansion film is carried out to the MEMS wafer are as follows:
Expansion film is carried out to the MEMS wafer using film machine is expanded, until adjacent chip spacing range reaches 50 microns extremely
200 microns.
Specifically, can be, but not limited to fix using expanding brilliant ring and carry out expanding film, drawn after expanding film film extra outside brilliant ring is expanded
Fall.
The separation method of 5th kind of MEMS wafer chip provided by the embodiments of the present application, is in the first above-mentioned MEMS wafer
Further include following technical characteristic on the basis of the separation method of chip:
Before protective film is sticked in the position where the Cutting Road, further includes:
The protective film is punched, the hole is corresponding with the size of the chip area and position.
Specifically, can be, but not limited to protective film be punched using cheesing techniques, punch size and chip area
Size and location are consistent, only in MEMS chip regional opening, and retain the protective film at Cutting Road.
The separation method of 6th kind of MEMS wafer chip provided by the embodiments of the present application, be it is above-mentioned the first to the 5th kind
In the separation method of MEMS wafer chip it is any on the basis of, further include following technical characteristic:
It is described that scribing is carried out to MEMS wafer are as follows:
To MEMS wafer carry out scribing twice until the Cutting Road with a thickness of the MEMS wafer thickness 10% to
30%.
Specifically, MEMS wafer can be placed on cutting machine special stainless steel magazine, passed using mechanical arm
It is defeated, the cutting thickness or knife up of MEMS wafer are set according to wafer thickness, cutting, step are partly cut through using twin shaft cutting machine
(Step) cutting axis one cuts MEMS wafer 10% to 30%, and cutting axis two cuts MEMS wafer 40% to 60%, after having cut
The 10% to 30% of reserved wafer thickness, whole wafer also remains an entirety at this time.
In conclusion the above method provided by the invention, using half cutting process, subsequent technique can carry out wafer
Grade operation, improves production efficiency and yield, after carrying out pad pasting protection to Cutting Road, particle and silicon slag quilt that when sliver generates
Control will not influence MEMS structure, to improve production efficiency and product yield within film.
Above-mentioned entire chip separation process is illustrated with a specific example below:
(1) as shown in Fig. 2, Fig. 2 is the MEMS wafer schematic diagram after being thinned, including on the surface of MEMS wafer 1
MEMS chip 2 to be separated, which protected to the positive mask of MEMS wafer 1, using stripping apparatus to 1 back side of MEMS wafer
Carry out it is thinned, 1 thickness control of MEMS wafer within 100 μm to 500 μm, be thinned after the protective film on surface is taken off；
(2) using intermediate hanging vacuum chuck, 1 face down of MEMS wafer is placed on laminator sucker centre, from
UV film is pulled out after laminator in reel, length exceeds 2 centimetres to 10 centimetres of stainless steel frame, if film locally has wrinkle, needs further
It tenses until surrounding is uniform, gently being driven away with idler wheel makes on the smooth back side for being close to MEMS wafer 1 of film and stainless steel frame, beyond not
UV film on rust steel frame is cut away；
(3) as shown in figure 3, Fig. 3 is the schematic diagram of the MEMS wafer after scribing, surface is provided with UV film 3, specifically,
MEMS wafer 1 is placed on cutting machine special stainless steel magazine, is transmitted using mechanical arm, according to MEMS wafer 1
The cutting thickness or knife up of MEMS wafer 1 is arranged in thickness, is partly cut through cutting, step (Step) cutting using twin shaft cutting machine
Axis one cut MEMS wafer 10% to 30%, axis two cut MEMS wafer 40% to 60%, cut after reserve wafer 10% to
30%, whole wafer or an entirety；
(4) cut after the completion of, using cutter robot arm together with stainless steel frame 4 by MEMS wafer 1 from chopping disk
It transfers back in stainless steel magazine；
(5) MEMS wafer after cutting is cleaned and is dried using cleaning machine；
(6) irradiated 0.5 minute to 5 minutes using UV irradiating machine, solution UV carried out to MEMS wafer, energy hole 100 to
500mJ/cm2, the viscosity of wavelength 365nm, UV glue can be reduced to pervious 1% to 10%, to facilitate MEMS chip and UV film
Separation；
(7) MEMS wafer is put into release pallet or load plate, is transmitted using mechanical arm, in resist remover Chamber
Interior progress wafer scale release, wafer discharge number 1 to 25, improve equipment compatibility, while improving release and producing
Product uniformity and repeatability；
(8) MEMS wafer is transferred back into magazine from resist remover Chamber after discharging, utilizes probe station (Probe
Test wafer-level test) is carried out to MEMS wafer, after being completed, backside of wafer is pasted into back UV film again；
(9) as shown in figure 4, Fig. 4 is the schematic diagram of the UV film after punching, specifically, being beaten using cheesing techniques UV film
Portal 5, the size in hole 5 is consistent with chip size, MEMS chip regional opening, retains UV film in the position of Cutting Road；
(10) as shown in figure 5, Fig. 5 is the schematic diagram after UV film with hole and MEMS wafer fit together, tool
Body, the UV film having openning hole is attached to crystal column surface using dedicated laminator, dedicated laminator is furnished with micro- lens head, can be right
Wafer carries out high power positioning, and UV film is attached to crystal column surface, is wrapped up at Cutting Road by UV film, MEMS chip region still keeps exposed shape
State；
(11) sliver is carried out to precut wafer using breaking machine, wafer splits along precut road, due to Cutting Road
There is patch UV film protection, the particle and silicon slag that when sliver generates will not be fallen in MEMS structure, and UV film is by aperture institute at MEMS structure
Not interfere with chip, UV film strips have very strong viscosity, particle and silicon slag can be sticked to UV film surface；
(12) it as shown in fig. 6, Fig. 6 is the MEMS wafer schematic diagram removed after UV film and sliver, is shone using UV irradiating machine
It penetrates 0.5 minute to 5 minutes, solution UV is carried out to MEMS wafer front, energy hole is in 100mJ/cm2To 500mJ/cm2, wavelength is
The viscosity of 365nm, UV glue can be reduced to pervious 1% to 10%, the UV film of punching be taken off from positive, black lines in figure
It is the Cutting Road 6 after sliver；
(13) expansion film process is carried out to wafer using expansion film machine, spreads apart chip more than around, the spacing of chip
Control is at 50 microns to 200 microns；
(14) as shown in fig. 7, Fig. 7 is the MEMS wafer schematic diagram expanded after film, expansion film is carried out using the brilliant ring 7 of expansion and is fixed,
It is crossed out after expanding film UV film extra outside brilliant ring is expanded；
(15) wafer scale optical detection is carried out using automatic optics inspection (AOI) equipment, sub-elects qualified MEMS chip；
(16) Pick and Place equipment is utilized, chip is put into chip storage box or is pasted back from removing on Tape
Enter subsequent packaging procedures on Tape (UV film or blue film).
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (5)
1. a kind of separation method of MEMS wafer chip characterized by comprising
Scribing is carried out to MEMS wafer, marks off multiple chip areas using different Cutting Roads；
Protective film is sticked in the position where the Cutting Road, the chip area is kept to be exposed to outside；
To the MEMS wafer carry out sliver, the protective film be used for the wafer along Cutting Road split generation particle adhere to
Firmly；
The protective film is removed, and expansion film is carried out to the MEMS wafer, isolates chip；
It is described that scribing is carried out to MEMS wafer are as follows:
Scribing twice is carried out until the Cutting Road is with a thickness of the 10% to 30% of the MEMS wafer thickness to MEMS wafer.
2. the separation method of MEMS wafer chip according to claim 1, which is characterized in that described in the Cutting Road institute
Position stick protective film are as follows:
UV film is sticked in the position where the Cutting Road.
3. the separation method of MEMS wafer chip according to claim 2, which is characterized in that the removal protective film
Are as follows:
It is 100mJ/cm using the energy that wavelength is 365nm2To 500mJ/cm2UV film 0.5 minute to 5 points described in ultraviolet light
Clock carries out solution UV.
4. the separation method of MEMS wafer chip according to claim 3, which is characterized in that described to the MEMS wafer
Carry out expansion film are as follows:
Using expand film machine expansion film is carried out to the MEMS wafer, until adjacent chip spacing range reach 50 microns to 200 it is micro-
Rice.
5. the separation method of MEMS wafer chip according to claim 1, which is characterized in that described in the Cutting Road institute
Position stick protective film before, further includes:
The protective film is punched, the hole is corresponding with the size of the chip area and position.
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| CN110104607B (en) * | 2019-05-07 | 2021-12-28 | 清华大学 | Scribing method for protecting sensitive structure of MEMS device |
| CN110534446B (en) * | 2019-09-09 | 2021-12-21 | 烟台睿创微纳技术股份有限公司 | MEMS wafer level packaging test method |
| CN111044757A (en) * | 2019-12-25 | 2020-04-21 | 北京航天控制仪器研究所 | Three-layer bonded capacitive micro-accelerometer structure electrode leading-out method |
| CN112758885A (en) * | 2020-12-25 | 2021-05-07 | 中国电子科技集团公司第十三研究所 | Cutting method of MEMS (micro-electromechanical systems) special-shaped chip |
| CN112830448B (en) * | 2021-01-19 | 2023-12-26 | 潍坊歌尔微电子有限公司 | Microphone packaging technology and microphone packaging structure |
| CN114664698B (en) * | 2022-02-14 | 2024-12-17 | 苏州微赛智能科技有限公司 | Process for separating, cutting and flashing semiconductor packaging chip |
| CN117276199A (en) * | 2023-11-20 | 2023-12-22 | 佛山市蓝箭电子股份有限公司 | Cutting processing method of wafer |
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