CN102464296A - MEMS structure cutting and separating method - Google Patents
MEMS structure cutting and separating method Download PDFInfo
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- CN102464296A CN102464296A CN201010534244XA CN201010534244A CN102464296A CN 102464296 A CN102464296 A CN 102464296A CN 201010534244X A CN201010534244X A CN 201010534244XA CN 201010534244 A CN201010534244 A CN 201010534244A CN 102464296 A CN102464296 A CN 102464296A
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- cover layer
- mems structure
- cutting
- back side
- mucous membrane
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- 238000005520 cutting process Methods 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title abstract description 5
- 210000004400 mucous membrane Anatomy 0.000 claims description 31
- 238000000926 separation method Methods 0.000 claims description 13
- 210000002808 connective tissue Anatomy 0.000 claims description 3
- 239000000498 cooling water Substances 0.000 abstract description 7
- 239000002245 particle Substances 0.000 abstract description 6
- 238000003466 welding Methods 0.000 abstract description 3
- 230000003749 cleanliness Effects 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910008045 Si-Si Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910006411 Si—Si Inorganic materials 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
According to the MEMS structure cutting and separating method, in the cutting process, as the ultraviolet film with good transparency is adhered on the back covering layer, the cutting mark on the back covering layer can be clearly seen in the cutting process, so that accurate cutting is completed, and the through hole on the back covering layer can be protected from pollution of cutting particles and impact of cooling water flow; meanwhile, the ultraviolet film is also adhered on the front covering layer, so that the cutting particles and cooling water can be prevented from permeating into the through holes on the front covering layer, and the welding performance and yield of the product can be improved. Meanwhile, the back covering layer still has good cleanliness after the ultraviolet film on the back covering layer is removed through ultraviolet irradiation.
Description
Technical field
The present invention relates to the semiconductor packaging field, particularly a kind of MEMS structure cuts separation method.
Background technology
Common MEMS (MEMS) structure gets into the cutting process of single MEMS device after manufacturing process is accomplished.Please referring to Fig. 1, Fig. 1 is the MEMS structure cuts separation method sketch map of prior art.As shown in Figure 1; The MEMS structure comprises front cover layer (Top cover) 201, mechanical layer (mechanical wafer) 202 and back side cover layer (Bottom cover) 203 usually successively; Front cover layer 201, mechanical layer 202 be with forming Si-Si atom bonding between the back side cover layer 203, thereby reach the connection between the wafer.Before cutting, cutting is placed with mucous membrane 300 on the carrier 100, and the front cover layer 201 of MEMS structure downwards, back side cover layer 203 upwards is placed on the mucous membrane 300 on the cutting carrier 100, and the front cover layer 201 of MEMS structure sticks on the mucous membrane 300.The function of this mucous membrane 300 is for still keeping the integrality of whole M EMS structure when the MEMS structure is cut into single MEMS device.Carry out after cutting and separating goes out single MEMS device down to 201 pairs of MEMS structures of front cover layer from back side cover layer 203, because the adhesive attraction of mucous membrane 300, the MEMS structure still can intactly be shifted shelves operation.When shelving, be selected, peel off, accomplish final encapsulation with mucous membrane 300 through the MEMS of test passes device.
Compare with traditional I C wafer; Three layer crystals circles (front cover layer, mechanical layer and back side cover layer) in the MEMS structure have cavity, film and overarm; These micro mechanical structures damage because of Mechanical Contact easily, because of exposure is stain, therefore when cutting, need partly make protection to the sensing element in the MEMS structure; Make its destruction that does not receive particulate and fluid, only in this way could guarantee cleaning and structure complete of MEMS device.But the cutting method of prior art is only pasted one deck mucous membrane on as positive tectal wafer; The supratectal through hole in the back side is in exposed state; The silicon bits are easy to get in the supratectal through hole in its back side in the cutting process successively, and the cutting cooling water also can impact the micro-structural in the through hole.Positive supratectal through hole also is easy to infilter water owing to only receive the protection of one deck mucous membrane in the mucous membrane during cutting simultaneously, thereby brings the silicon bits in the positive supratectal through hole into.The cutting method of dimension prior art is to guarantee cleaning and the structural integrity of MEMS structure in cutting process.
Summary of the invention
The technical problem that the present invention will solve provides a kind of MEMS structure cuts separation method, can not guarantee the cleaning of MEMS structure in cutting process and the problem of structural integrity with the cutting method that solves prior art.
For solving the problems of the technologies described above, the present invention provides a kind of MEMS structure cuts separation method, and said MEMS structure comprises front cover layer, mechanical layer and back side cover layer successively, may further comprise the steps:
On the cutting carrier, be placed with mucous membrane;
Cover layer is pasted the ultraviolet film in the front of said MEMS structure, on the cover layer of the back side of said MEMS structure, pastes the transparent violet adventitia;
Said MEMS structure front cover layer is downward, back side cover layer upwards is positioned on the said mucous membrane on the said cutting carrier, and the front cover layer of said MEMS structure is sticked on the said mucous membrane;
Cover layer cuts said MEMS structure down to said front cover layer from the said back side, isolates single MEMS device; During cutting the supratectal ultraviolet film of the said front cover layer and the said back side is cut, and said mucous membrane is not cut;
Thereby the supratectal ultraviolet film in the said back side is carried out ultraviolet irradiation remove this layer ultraviolet film;
Single MEMS device to cutting forms is tested, and the single MEMS device of test passes is peeled off with said mucous membrane with the supratectal ultraviolet film in said front mutually.
Optional, said mucous membrane is blue film, ultraviolet film.
MEMS structure cuts separation method of the present invention is in cutting process; Owing to be pasted with the good ultraviolet film of properties of transparency on the cover layer of the back side; Make and the time can know in cutting and to see the supratectal cut mark in the back side; Accomplish accurate cutting, can protect the supratectal through hole in the back side to exempt from the pollution of cutting particle and the impact of cooling water flow again; While can prevent to cut particle and cooling water and penetrate in the positive supratectal through hole owing on the cover layer of front, also be pasted with the ultraviolet film, thereby can improve the welding performance and the yield of product.Back side cover layer still has good cleannes after removing the supratectal ultraviolet film in the back side through ultraviolet irradiation simultaneously.
Description of drawings
Fig. 1 is the MEMS structure cuts separation method sketch map of prior art;
Fig. 2 is a MEMS structure cuts separation method sketch map of the present invention.
The specific embodiment
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, below specific embodiments of the invention do detailed explanation.
MEMS structure cuts separation method of the present invention multiple substitute mode capable of using realizes; Be to explain below through preferred embodiment; Certainly the present invention is not limited to this specific embodiment, and the general replacement that the one of ordinary skilled in the art knew is encompassed in protection scope of the present invention undoubtedly.
Please referring to Fig. 2, Fig. 2 is a MEMS structure cuts separation method sketch map of the present invention.As shown in Figure 2; The MEMS structure comprises front cover layer (Top cover) 201, mechanical layer (mechanical wafer) 202 and back side cover layer (Bottom cover) 203 usually successively; Front cover layer 201, mechanical layer 202 be with forming Si-Si atom bonding between the back side cover layer 203, thereby reach the connection between the wafer.MEMS structure cuts separation method of the present invention may further comprise the steps:
At first, on cutting carrier 100, be placed with mucous membrane 300; Said mucous membrane 300 can be blue film, ultraviolet film etc.;
Secondly, cover layer 201 is pasted ultraviolet film 302 in the front of MEMS structure, on the back side of MEMS structure cover layer 203, pastes transparent violet adventitia 301;
Once more, with MEMS structure front cover layer 201 downwards, back side cover layer 203 upwards is positioned on the mucous membrane 300 on the cutting carrier 100, and the front cover layer 201 of MEMS structure is sticked on the mucous membrane 300;
Once more, cover layer 203 cuts down to 201 pairs of MEMS structures of front cover layer from the back side, isolates single MEMS device; During cutting front cover layer 201 and the ultraviolet film on the back side cover layer 203 are cut, and mucous membrane 300 is not cut;
Once more, thus the ultraviolet film on the back side cover layer 203 is carried out ultraviolet irradiation removes this layer ultraviolet film;
At last, the single MEMS device that cutting forms is tested, the single MEMS device of test passes is peeled off with mucous membrane with positive supratectal ultraviolet film mutually.
In the cutting process; Owing to be pasted with the good ultraviolet film of properties of transparency on the cover layer of the back side; Make and the time can know in cutting and to see the supratectal cut mark in the back side, accomplish cutting accurately, can protect the supratectal through hole in the back side to exempt from the pollution of cutting particle and the impact of cooling water flow again; While can prevent to cut particle and cooling water and penetrate in the positive supratectal through hole owing on the cover layer of front, also be pasted with the ultraviolet film, thereby can improve the welding performance and the yield of product.
The function of mucous membrane is for still keeping the integrality of whole M EMS structure when the MEMS structure is cut into single MEMS device.The MEMS structure is carried out removing the supratectal ultraviolet film in the back side through ultraviolet irradiation after cutting and separating goes out single MEMS device down to the front cover layer from back side cover layer.Because still can intactly being shifted, the adhesive attraction of mucous membrane, MEMS structure shelve operation.When shelving, qualified MEMS device is selected and peels off.When peeling off, positive supratectal ultraviolet film is owing to the adhesive attraction of mucous membrane adheres to mutually with mucous membrane and peels off mutually with single MEMS device.At last the single MEMS device that separates is accomplished final encapsulation.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, belong within the scope of claim of the present invention and equivalent technologies thereof if of the present invention these are revised with modification, then the present invention also is intended to comprise these changes and modification interior.
Claims (2)
1. MEMS structure cuts separation method, said MEMS structure comprises front cover layer, mechanical layer and back side cover layer successively, it is characterized in that, may further comprise the steps:
On the cutting carrier, be placed with mucous membrane;
Cover layer is pasted the ultraviolet film in the front of said MEMS structure, on the cover layer of the back side of said MEMS structure, pastes the transparent violet adventitia;
Said MEMS structure front cover layer is downward, back side cover layer upwards is positioned on the said mucous membrane on the said cutting carrier, and the front cover layer of said MEMS structure is sticked on the said mucous membrane;
Cover layer cuts said MEMS structure down to said front cover layer from the said back side, isolates single MEMS device; During cutting the supratectal ultraviolet film of the said front cover layer and the said back side is cut, and said mucous membrane is not cut;
Thereby the supratectal ultraviolet film in the said back side is carried out ultraviolet irradiation remove this layer ultraviolet film;
Single MEMS device to cutting forms is tested, and the single MEMS device of test passes is peeled off with said mucous membrane with the supratectal ultraviolet film in said front mutually.
2. MEMS structure cuts separation method as claimed in claim 1 is characterized in that, said mucous membrane is blue film, ultraviolet film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010534244XA CN102464296A (en) | 2010-11-05 | 2010-11-05 | MEMS structure cutting and separating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010534244XA CN102464296A (en) | 2010-11-05 | 2010-11-05 | MEMS structure cutting and separating method |
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| Publication Number | Publication Date |
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| CN102464296A true CN102464296A (en) | 2012-05-23 |
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| CN201010534244XA Pending CN102464296A (en) | 2010-11-05 | 2010-11-05 | MEMS structure cutting and separating method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104192791A (en) * | 2014-09-15 | 2014-12-10 | 华东光电集成器件研究所 | Cutting method for MEMS (Micro-electromechanical Systems) wafer |
| CN105328804A (en) * | 2014-06-20 | 2016-02-17 | 中芯国际集成电路制造(上海)有限公司 | Cutting method of wafer |
| CN105565254A (en) * | 2014-10-17 | 2016-05-11 | 中芯国际集成电路制造(上海)有限公司 | MEMS (Micro-Electro-Mechanical System) device, manufacturing method thereof and electronic device |
| CN109081303A (en) * | 2018-08-27 | 2018-12-25 | 无锡芯坤电子科技有限公司 | A kind of chip double-side cutting technique |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101086956A (en) * | 2006-06-09 | 2007-12-12 | 松下电器产业株式会社 | Method for fabricating semiconductor device |
| US20080227234A1 (en) * | 2007-03-13 | 2008-09-18 | Oki Electric Industry Co., Ltd. | Method of manufacturing a semiconductor device |
| CN101860262A (en) * | 2010-05-20 | 2010-10-13 | 上海交通大学 | Piezoelectric bimorph MEMS energy harvester and preparation method thereof |
| US20110024876A1 (en) * | 2009-07-31 | 2011-02-03 | Epir Technologies, Inc. | Creation of thin group ii-vi monocrystalline layers by ion cutting techniques |
-
2010
- 2010-11-05 CN CN201010534244XA patent/CN102464296A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101086956A (en) * | 2006-06-09 | 2007-12-12 | 松下电器产业株式会社 | Method for fabricating semiconductor device |
| US20080227234A1 (en) * | 2007-03-13 | 2008-09-18 | Oki Electric Industry Co., Ltd. | Method of manufacturing a semiconductor device |
| US20110024876A1 (en) * | 2009-07-31 | 2011-02-03 | Epir Technologies, Inc. | Creation of thin group ii-vi monocrystalline layers by ion cutting techniques |
| CN101860262A (en) * | 2010-05-20 | 2010-10-13 | 上海交通大学 | Piezoelectric bimorph MEMS energy harvester and preparation method thereof |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105328804A (en) * | 2014-06-20 | 2016-02-17 | 中芯国际集成电路制造(上海)有限公司 | Cutting method of wafer |
| CN105328804B (en) * | 2014-06-20 | 2017-04-05 | 中芯国际集成电路制造(上海)有限公司 | A kind of cutting method of wafer |
| CN104192791A (en) * | 2014-09-15 | 2014-12-10 | 华东光电集成器件研究所 | Cutting method for MEMS (Micro-electromechanical Systems) wafer |
| CN105565254A (en) * | 2014-10-17 | 2016-05-11 | 中芯国际集成电路制造(上海)有限公司 | MEMS (Micro-Electro-Mechanical System) device, manufacturing method thereof and electronic device |
| CN109081303A (en) * | 2018-08-27 | 2018-12-25 | 无锡芯坤电子科技有限公司 | A kind of chip double-side cutting technique |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA Effective date: 20130614 Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Free format text: FORMER OWNER: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION Effective date: 20130614 |
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Effective date of registration: 20130614 Address after: 100176 No. 18 Wenchang Avenue, Beijing economic and Technological Development Zone Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 No. 18 Zhangjiang Road, Shanghai Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
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Application publication date: 20120523 |