CN108108309A - It is related to concurrent access method, solid state disk and the computer of more nand flash memories - Google Patents
It is related to concurrent access method, solid state disk and the computer of more nand flash memories Download PDFInfo
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Abstract
本发明涉及一种多NAND闪存组成的存储系统中的并行访问方法，所述NAND闪存的数量为N，通道的数量等于NAND闪存的数量，所述NAND闪存的物理页的数量为M，一次连续的请求的逻辑地址为0到M*N‑1，其中，M和N都是正整数，M≥2，N≥2，包括：所述连续的请求通过队列管理器，对于第i通道的第j次请求，分配的逻辑地址为M*N‑1‑i*N‑j；依次经过闪存转译层地址映射、请求分配管理器和NAND闪存控制器后写入到多NAND闪存组成的存储系统中。系统I/O性能提高，减少了基于NAND Flash SSD的垃圾回收时脏块的擦除次数及有效页复制次数。发明还涉及一种多NAND闪存组成的存储系统中的访问方法、固态硬盘和计算机。
The invention relates to a parallel access method in a storage system composed of multiple NAND flash memories. The number of said NAND flash memories is N, the number of channels is equal to the number of NAND flash memories, and the number of physical pages of said NAND flash memories is M. Continuous The logical address of the request is 0 to M*N-1, wherein, M and N are both positive integers, M≥2, N≥2, including: the continuous request passes through the queue manager, and for the j-th channel of the i-th channel request, the allocated logical address is M*N-1-i*N-j; it is written into the storage system composed of multiple NAND flash memories after going through the address mapping of the flash translation layer, the request allocation manager and the NAND flash memory controller in turn. The system I/O performance is improved, and the number of erasing of dirty blocks and the number of valid page copies during garbage collection based on NAND Flash SSD are reduced. The invention also relates to an access method in a storage system composed of multiple NAND flash memories, a solid-state hard disk and a computer.
Description
技术领域technical field
本发明涉及NAND闪存，特别是涉及多NAND闪存组成的存储系统中的访问方法、多NAND闪存组成的存储系统中的并行访问方法、固态硬盘和计算机。The invention relates to NAND flash memory, in particular to an access method in a storage system composed of multiple NAND flash memories, a parallel access method in the storage system composed of multiple NAND flash memories, a solid-state hard disk and a computer.
背景技术Background technique
NAND Flash作为一种非易失性存储器件，具有体积小、访问速度快、功率小及抗震等优良特性，因此，多NAND闪存组成的存储系统(固态硬盘(SSD)就是一个典型的例子)已经应用于军用及民用存储领域。需要注意的是，下面在背景技术中，为了描述方便，多NAND闪存组成的存储系统用固态硬盘代替。或者说两者在某种意义上来说就是等价的。As a non-volatile storage device, NAND Flash has excellent characteristics such as small size, fast access speed, low power and shock resistance. Therefore, a storage system composed of multiple NAND flash memories (solid state drive (SSD) is a typical example) has been Used in military and civilian storage fields. It should be noted that, in the background art below, for the convenience of description, a storage system composed of multiple NAND flash memories is replaced by a solid-state hard disk. In other words, the two are equivalent in a sense.
但是，NAND Flash器件具有一些固有的限制导致SSD管理具有一定的难度，其主要限制因素主要有：However, NAND Flash devices have some inherent limitations that make SSD management difficult. The main limiting factors are:
(1)非即时更新。在重新写入某一页前必须对这一页所在的块进行擦除操作，而不能直接写入，而擦除操作以块(block)，而不是以页(page)为单位；(1) Not updated immediately. Before rewriting a certain page, the block where the page is located must be erased, but not directly written, and the erase operation is based on a block (block), not a page (page);
(2)Nand Flash每一块在其失效前擦除/写入次数有限。对于单层NAND Flash(SLCNAND Flash)一般具有数万次的擦除/写入次数，而多层NAND Flash(MLC NAND Flash)则只有几千次的擦除/写入次数。一旦作用中超过极限写入/擦除次数，则NAND Flash就会失效，无法继续使用。(2) Each block of Nand Flash has a limited number of erasing/writing times before it fails. Single-layer NAND Flash (SLCNAND Flash) generally has tens of thousands of erasing/writing cycles, while multi-layer NAND Flash (MLC NAND Flash) only has thousands of erasing/writing cycles. Once the limit of write/erase times is exceeded, the NAND Flash will fail and cannot be used any longer.
目前，基于NAND Flash的SSD典型存储系统主要使用轮循(Round-Robin)并行访问方法，如图1所示。Currently, a typical NAND Flash-based SSD storage system mainly uses a round-robin (Round-Robin) parallel access method, as shown in FIG. 1 .
为了充分利用SSD多个通道的并行性，轮循并行访问方法将所有访问请求分布到所有到并行单元，如多芯片或者层(die)上，让这些请求可以在不需要等待或者挂起的情况下，同时被服务，从而达到较高的I/O速率。图1中表示的是就是一个简化的SSD，其拥有四个通道，每个通道有一个NAND Flash芯片，分别为NAND Flash0～4。在文件系统写入逻辑地址LPN(Logical Page Number)0～15时，轮循并行访问方法将这16次请求按图1方式进行存储。In order to make full use of the parallelism of multiple channels of SSD, the round robin parallel access method distributes all access requests to all parallel units, such as multiple chips or layers (die), so that these requests can be processed without waiting or hanging At the same time, it is served, so as to achieve a higher I/O rate. Figure 1 shows a simplified SSD, which has four channels, and each channel has a NAND Flash chip, respectively NAND Flash0~4. When the file system writes logical addresses LPN (Logical Page Number) 0-15, the round robin parallel access method stores the 16 requests as shown in Figure 1.
传统技术存在以下技术问题：The traditional technology has the following technical problems:
SSD中主要采用轮循并行访问方法，将本来顺序的逻辑地址页离散地分布到整个存储介质中，从而造成物理存储介质中数据分布与文件系统数据组织形式不一致。这对于磁盘等可以立即更新的存储介质不会带来任何不良影响，但是NAND Flash必须在擦除后才能写入，是一种非立即更新器件，文件系统与物理介质之间数据组织形式不一致会造成大量的垃圾回收，从而对SSD的I/O性能造成不良影响。The round robin parallel access method is mainly used in SSD to discretely distribute the logical address pages in the original sequence to the entire storage medium, resulting in the inconsistency between the data distribution in the physical storage medium and the data organization form of the file system. This will not have any adverse effects on storage media that can be updated immediately, such as disks. However, NAND Flash must be erased before it can be written. Causes a large number of garbage collections, which adversely affects the I/O performance of the SSD.
发明内容Contents of the invention
基于此，有必要针对上述技术问题，提供一种多NAND闪存组成的存储系统中的访问方法。Based on this, it is necessary to provide an access method in a storage system composed of multiple NAND flash memories for the above technical problems.
一种多NAND闪存组成的存储系统中的并行访问方法，所述NAND闪存的数量为N，通道的数量等于NAND闪存的数量，所述NAND闪存的物理页的数量为M，一次连续的请求的逻辑地址为0到M*N-1，其中，M和N都是正整数，M≥2，N≥2，包括：A parallel access method in a storage system composed of multiple NAND flash memories, the number of said NAND flash memories is N, the number of channels is equal to the number of NAND flash memories, the number of physical pages of said NAND flash memories is M, and one continuous request The logical address is 0 to M*N-1, where M and N are both positive integers, M≥2, N≥2, including:
所述连续的请求通过队列管理器，对于第i通道的第j次请求，分配的逻辑地址为M*N-1-i*N-j；The continuous request passes through the queue manager, and for the jth request of the ith channel, the allocated logical address is M*N-1-i*N-j;
依次经过闪存转译层地址映射、请求分配管理器和NAND闪存控制器后写入到多NAND闪存组成的存储系统中。After going through the address mapping of the flash memory translation layer, the request allocation manager and the NAND flash memory controller, it is written into the storage system composed of multiple NAND flash memories.
上述多NAND闪存组成的存储系统中的并行访问方法，系统I/O性能提高，减少了多NAND闪存组成的存储系统的垃圾回收时脏块的擦除次数及有效页复制次数，且利用有效的队列管理方法充分利用了多NAND闪存组成的存储系统中所有通道的并行性，因此，多NAND闪存组成的存储系统的I/O性能得到了提高；一定程度上延长了多NAND闪存组成的存储系统使用寿命，在多NAND闪存组成的存储系统相同的使用时间中，本发明的方法相对于其它并行访问方法减少了垃圾回收时脏块的擦除次数，由于NAND Flash的极限擦除次数是一定的，因此，使用本发明的方法的多NAND闪存组成的存储系统可以使用更长时间。The above-mentioned parallel access method in the storage system composed of multiple NAND flash memories improves the system I/O performance, reduces the number of times of erasing of dirty blocks and the number of valid page copies during garbage collection of the storage system composed of multiple NAND flash memories, and utilizes effective The queue management method makes full use of the parallelism of all channels in the storage system composed of multiple NAND flash memories. Therefore, the I/O performance of the storage system composed of multiple NAND flash memories is improved; to a certain extent, the storage system composed of multiple NAND flash memories is extended. Service life, in the same service time of a storage system composed of multiple NAND flash memories, the method of the present invention reduces the erasing times of dirty blocks during garbage collection compared with other parallel access methods, because the limit erasing times of NAND Flash is certain Therefore, the storage system composed of multiple NAND flash memories using the method of the present invention can be used for a longer period of time.
在另外的一个实施例中，所述请求分配管理器针对N通道采用的并行传输的方法为轮循。In another embodiment, the parallel transmission method adopted by the request allocation manager for the N channels is round robin.
一种多NAND闪存组成的存储系统中的访问方法，所述NAND闪存的数量为N，通道的数量等于NAND闪存的数量，所述NAND闪存的物理页的数量为M，其中，M和N都是正整数，M≥2，N≥2，包括：An access method in a storage system composed of multiple NAND flash memories, the number of said NAND flash memories is N, the number of channels is equal to the number of NAND flash memories, and the number of physical pages of said NAND flash memories is M, wherein both M and N is a positive integer, M≥2, N≥2, including:
判断请求是不是连续的请求；Determine whether the request is a continuous request;
若所述请求是连续的请求，判断所述请求的长度L是否大于M*N；If the request is a continuous request, judging whether the length L of the request is greater than M*N;
若所述请求的长度L大于M*N，则执行[L，M*N]次上述的多NAND闪存组成的存储系统中的并行访问方法写入所述请求；If the length L of described request is greater than M*N, then carry out [L, M*N] times above-mentioned parallel access method writing described request in the storage system that many NAND flash memory forms;
当MOD(L，M*N)≠0，利用轮循并行访问方法写入所述请求执行上一步骤后剩下的部分。When MOD(L, M*N)≠0, use the round robin parallel access method to write the remaining part of the request after executing the previous step.
在另外的一个实施例中，当所述请求不是连续的请求时，采用轮循并行访问方法写入所述请求。In another embodiment, when the requests are not consecutive requests, the round-robin parallel access method is used to write the requests.
在另外的一个实施例中，当所述请求的长度L小于M*N时，采用轮循并行访问方法写入所述请求。In another embodiment, when the length L of the request is less than M*N, the round robin parallel access method is used to write the request.
一种固态硬盘，应用上述的多NAND闪存组成的存储系统中的并行访问方法或者上述的多NAND闪存组成的存储系统中的访问方法。A solid-state hard disk, using the above-mentioned parallel access method in the storage system composed of multiple NAND flash memories or the above-mentioned access method in the storage system composed of multiple NAND flash memories.
一种计算机，包含上述的固态硬盘。A computer, comprising the above-mentioned solid-state hard disk.
附图说明Description of drawings
图1为背景技术中的一种轮循并行访问方法的请求在物理空间的分布的示意图。FIG. 1 is a schematic diagram of distribution of requests in physical space in a round robin parallel access method in the background technology.
图2为本申请实施例提供的一种多NAND闪存组成的存储系统中的并行访问方法的系统结构图。FIG. 2 is a system structural diagram of a parallel access method in a storage system composed of multiple NAND flash memories provided by an embodiment of the present application.
图3为本申请实施例提供的一种多NAND闪存组成的存储系统中的并行访问方法的一个应用场景的请求写入顺序的示意图。FIG. 3 is a schematic diagram of a request write sequence in an application scenario of a parallel access method in a storage system composed of multiple NAND flash memories provided by an embodiment of the present application.
图4为本申请实施例提供的一种多NAND闪存组成的存储系统中的并行访问方法的一个应用场景的请求在物理空间的分布的示意图。FIG. 4 is a schematic diagram of distribution of requests in physical space in an application scenario of a parallel access method in a storage system composed of multiple NAND flash memories provided by an embodiment of the present application.
图5为本申请实施例提供的一种多NAND闪存组成的存储系统中的访问方法的的流程图。FIG. 5 is a flow chart of an access method in a storage system composed of multiple NAND flash memories provided by an embodiment of the present application.
具体实施方式Detailed ways
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
参阅图2，一种多NAND闪存组成的存储系统中的并行访问方法，所述NAND闪存的数量为N，通道的数量等于NAND闪存的数量，所述NAND闪存的物理页的数量为M，一次连续的请求的逻辑地址为0到M*N-1，其中，M和N都是正整数，M≥2，N≥2，包括：Referring to Fig. 2, a kind of parallel access method in the storage system that many NAND flashing memories are formed, the quantity of described NAND flashing memories is N, the quantity of channel equals the quantity of NAND flashing memories, the quantity of the physical page of described NAND flashing memories is M, once The logical addresses of consecutive requests are from 0 to M*N-1, where M and N are both positive integers, M≥2, N≥2, including:
所述连续的请求通过队列管理器，对于第i通道的第j次请求，分配的逻辑地址为M*N-1-i*N-j；The continuous request passes through the queue manager, and for the jth request of the ith channel, the allocated logical address is M*N-1-i*N-j;
依次经过闪存转译层地址映射、请求分配管理器和NAND闪存控制器后写入到多NAND闪存组成的存储系统中。After going through the address mapping of the flash memory translation layer, the request allocation manager and the NAND flash memory controller, it is written into the storage system composed of multiple NAND flash memories.
上述多NAND闪存组成的存储系统中的并行访问方法，系统I/O性能提高，减少了多NAND闪存组成的存储系统的垃圾回收时脏块的擦除次数及有效页复制次数，且利用有效的队列管理方法充分利用了多NAND闪存组成的存储系统中所有通道的并行性，因此，多NAND闪存组成的存储系统的I/O性能得到了提高；一定程度上延长了多NAND闪存组成的存储系统使用寿命，在多NAND闪存组成的存储系统相同的使用时间中，本发明的方法相对于其它并行访问方法减少了垃圾回收时脏块的擦除次数，由于NAND Flash的极限擦除次数是一定的，因此，使用本发明的方法的多NAND闪存组成的存储系统可以使用更长时间。The above-mentioned parallel access method in the storage system composed of multiple NAND flash memories improves the system I/O performance, reduces the number of times of erasing of dirty blocks and the number of valid page copies during garbage collection of the storage system composed of multiple NAND flash memories, and utilizes effective The queue management method makes full use of the parallelism of all channels in the storage system composed of multiple NAND flash memories. Therefore, the I/O performance of the storage system composed of multiple NAND flash memories is improved; to a certain extent, the storage system composed of multiple NAND flash memories is extended. Service life, in the same service time of a storage system composed of multiple NAND flash memories, the method of the present invention reduces the erasing times of dirty blocks during garbage collection compared with other parallel access methods, because the limit erasing times of NAND Flash is certain Therefore, the storage system composed of multiple NAND flash memories using the method of the present invention can be used for a longer period of time.
在另外的一个实施例中，所述请求分配管理器针对N通道采用的并行传输的方法为轮循。可以理解，也可以采用除轮循以外的方法。In another embodiment, the parallel transmission method adopted by the request allocation manager for the N channels is round robin. It is understood that methods other than round robin may also be used.
下面介绍一个具体的应用场景：A specific application scenario is introduced below:
参阅图3和图4，M＝N＝4，若有写入请求LPN0～15，则在本发明的方法下下，队列管理器将请求数据写入顺序如图3所示，这些请求在物理空间的分布如图4所示。本发明的方法仍然采用轮循的方法，即将请求依次在所有的并行通道之间进行写入，因此，充分利用了所有通道的并行性，对多NAND闪存组成的存储系统I/O性能没有影响，但由于所有请求已经经过队列管理器将写入顺序按照逻辑空间进行重新排列，因此，最终写入数据在物理空间的分布与逻辑空间分布是一致的。Referring to Fig. 3 and Fig. 4, M=N=4, if there is write request LPN0～15, then under the method of the present invention, queue manager writes request data order as shown in Figure 3, and these requests are physically The spatial distribution is shown in Figure 4. The method of the present invention still adopts the method of round robin, is about to request to write among all parallel channels in turn, therefore, has fully utilized the parallelism of all channels, has no influence on the storage system I/O performance that many NAND flash memories are formed , but since all requests have been rearranged by the queue manager according to the logical space, the distribution of the final written data in the physical space is consistent with the distribution of the logical space.
对于图4，可以看到在本发明的方法的作用下，一个物理块中的逻辑页是连续的，因此，当出现连续更新操作时，擦除次数及有效页复制次数会显著减少。例如，同样更新LPN0～3，则在本发明的方法的下即图4的分布，只需要擦除一个物理页，且不需要进行任何有效物理页的复制，因此，相对于仅仅采用了轮循并行访问方法(即背景技术中介绍的方法)，多NAND闪存组成的存储系统I/O性能大大提高。As for Fig. 4, it can be seen that under the action of the method of the present invention, the logical pages in a physical block are continuous, therefore, when continuous update operations occur, the number of erasing times and the number of effective page copying times will be significantly reduced. For example, if LPN0～3 are also updated, then under the method of the present invention, that is, the distribution of FIG. With the parallel access method (that is, the method introduced in the background art), the I/O performance of the storage system composed of multiple NAND flash memories is greatly improved.
一种多NAND闪存组成的存储系统中的访问方法，所述NAND闪存的数量为N，通道的数量等于NAND闪存的数量，所述NAND闪存的物理页的数量为M，其中，M和N都是正整数，M≥2，N≥2，包括：An access method in a storage system composed of multiple NAND flash memories, the number of said NAND flash memories is N, the number of channels is equal to the number of NAND flash memories, and the number of physical pages of said NAND flash memories is M, wherein both M and N is a positive integer, M≥2, N≥2, including:
S110、判断请求是不是连续的请求，若所述请求是连续的请求，执行S120，否则执行S150。S110. Determine whether the request is a continuous request. If the request is a continuous request, perform S120; otherwise, perform S150.
S120、判断所述请求的长度L是否大于M*N，若所述请求的长度L大于M*N，则执行S130，否则执行S150。S120. Determine whether the length L of the request is greater than M*N, if the length L of the request is greater than M*N, execute S130, otherwise execute S150.
S130、执行[L，M*N](两个数相除取整函数)次上述的多NAND闪存组成的存储系统中的并行访问方法写入所述请求。S130. Execute [L, M*N] (two-number division and rounding function) times to write the request by the above-mentioned parallel access method in the storage system composed of multiple NAND flash memories.
S140、当MOD(L，M*N)≠0(两个数相除取余数函数)，利用轮循并行访问方法写入所述请求执行上一步骤后剩下的部分，结束执行。S140. When MOD(L, M*N)≠0 (the function of dividing two numbers and obtaining the remainder), use the round robin parallel access method to write the remaining part of the request after executing the previous step, and end the execution.
S150、采用轮循并行访问方法写入所述请求。S150. Write the request by using a round robin parallel access method.
一种固态硬盘，应用上述的多NAND闪存组成的存储系统中的并行访问方法或者上述的多NAND闪存组成的存储系统中的访问方法。A solid-state hard disk, using the above-mentioned parallel access method in the storage system composed of multiple NAND flash memories or the above-mentioned access method in the storage system composed of multiple NAND flash memories.
一种计算机，包含上述的固态硬盘。A computer, comprising the above-mentioned solid-state hard disk.
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。The technical features of the above-mentioned embodiments can be combined arbitrarily. To make the description concise, all possible combinations of the technical features in the above-mentioned embodiments are not described. However, as long as there is no contradiction in the combination of these technical features, should be considered as within the scope of this specification.
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。The above-mentioned embodiments only express several implementation modes of the present invention, and the descriptions thereof are relatively specific and detailed, but should not be construed as limiting the patent scope of the invention. It should be pointed out that those skilled in the art can make several modifications and improvements without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent for the present invention should be based on the appended claims.
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