CN108054136A - Copper wiring technique method - Google Patents
Copper wiring technique method Download PDFInfo
- Publication number
- CN108054136A CN108054136A CN201711138181.4A CN201711138181A CN108054136A CN 108054136 A CN108054136 A CN 108054136A CN 201711138181 A CN201711138181 A CN 201711138181A CN 108054136 A CN108054136 A CN 108054136A
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- China
- Prior art keywords
- copper
- interconnecting line
- coating
- wiring technique
- technique method
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
- H01L2221/1068—Formation and after-treatment of conductors
- H01L2221/1073—Barrier, adhesion or liner layers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention discloses a kind of copper wiring technique methods, include the following steps：Step 1: copper interconnecting line is formed using Damascus technics on a semiconductor substrate；The copper oxide on copper interconnecting line surface is reduced to copper Step 2: being pre-processed to the surface of copper interconnecting line；Step 3: coating is formed, by the way that the copper oxide on the copper interconnecting line surface is converted to the adhesion strength between the electromobility of the copper reduction copper interconnecting line and raising copper and the coating in step 2.The present invention can improve the interfacial characteristics of copper and coating, effectively improve the electromigration lifetime of contact hole.
Description
Technical field
The present invention relates to a kind of semiconductor integrated circuit manufacture method, more particularly to a kind of copper wiring technique method.
Background technology
With the continuous reduction of dimensions of semiconductor devices, copper wiring technique also faces huge challenge.Except to expire in technique
Sufficient design requirement, reliability are also the project having to through assessment.Wherein electromigration lifetime is the most heavy of measurement interconnection process
Want parameter.The parameter for influencing electromigration has a filling material, contact interface of defective workmanship and unlike material etc..A kind of existing copper
For interconnection process using silicon nitride and fluorinated silicon dioxide as dielectric, reliability test finds the distribution of contact hole electromigration lifetime
Figure has trailing phenomenon, and failure analysis shows that metal layer has copper diffusion, causes final electromigration lifetime that cannot meet product demand.
The contact interface between coating and copper above metallic copper is bad, is the main reason for causing failure, it is necessary to improve.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of copper wiring technique method, can improve the boundary of copper and coating
Face characteristic effectively improves the electromigration lifetime of contact hole.
In order to solve the above technical problems, copper wiring technique method provided by the invention includes the following steps：
Step 1: copper interconnecting line is formed using Damascus technics on a semiconductor substrate.
Step 2: the surface of the copper interconnecting line is pre-processed, it is described to pre-process the copper interconnecting line surface
Copper oxide is reduced to copper.
Step 3: forming coating on the surface for having carried out the pretreated copper interconnecting line, pass through step 2
The middle copper oxide by the copper interconnecting line surface is converted to copper and reduces the electromobility of the copper interconnecting line and improve copper and institute
State the adhesion strength between coating.
A further improvement is that the pretreatment of step 2 is pre-processed using hydrogen, using hydrogen by the copper
The copper oxide on interconnection line surface is reduced to copper.
A further improvement is that the material of coating described in step 3 uses nitrogen doped silicon carbide.
A further improvement is that be passed through silicon-containing gas when the coating is formed in step 3, the silicon-containing gas and
The copper on the copper interconnecting line surface reacts to form copper silicon intermetallic compound, using described in copper silicon intermetallic compound reduction
Adhesion strength between the electromobility of copper interconnecting line and raising copper and the coating.
A further improvement is that in step 1 before the Damascus technics is carried out, on the semiconductor substrate
Semiconductor devices is formed with, the semiconductor devices includes polysilicon gate and doped region, in the corresponding institute of the semiconductor devices
It states and contact hole is formed with above polysilicon gate and doped region, the contact hole passes through first layer interlayer film.
A further improvement is that the Damascus technics includes：
The first barrier layer is formed in the first layer interlayer film surface.
Second layer interlayer film is formed in first barrier layer surface.
Lithographic definition goes out the etch areas of the second layer interlayer film and the second layer interlayer film is performed etching to be formed
The forming region of the copper interconnecting line.
The grinding technics for carrying out copper filling and copper forms the copper interconnecting line.
A further improvement is that the Semiconductor substrate is silicon substrate.
A further improvement is that the K values of the nitrogen doped silicon carbide of the coating are 5.2.
A further improvement is that the temperature of the formation process of the nitrogen doped silicon carbide of the coating is 350 DEG C.
The present invention is not directly formed coating after copper interconnecting line is formed using Damascus technics, but first
To the surface of copper interconnecting line into the pretreatment be about to copper oxide and reduced, due to the oxidation on the surface of copper interconnecting line after pretreatment
Copper eliminates and is directly copper, therefore can prevent from forming copper nitride on the surface of copper interconnecting line in layer formation process is covered, so as to
Copper that the copper nitride on the surface of copper interconnecting line brings can be eliminated and coating contact is bad and the easy technology for generating electromigration is asked
Topic；Moreover, the present invention forms coating between the copper surface of non-oxidation copper, moreover it is possible to realize and form silicon on the surface of copper interconnecting line
Copper compound, since copper silicon intermetallic compound has high resistance therefore can slow down copper toward dielectric migration rate, and silicon
Compound provides better adhesive force for copper wire and coating between copper metal, finally can be so that the intrinsic electromigration lifetime of contact hole
Extend.
Description of the drawings
The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments：
Figure 1A-Fig. 1 C are the copper surface texture figures of existing copper interconnection process method；
Fig. 2 is the photo for the copper wiring technique structure that existing copper interconnection process method is formed；
Fig. 3 is the flow chart of copper wiring technique method of the embodiment of the present invention；
Fig. 4 is the sectional view for the copper wiring technique structure that present invention method is formed；
Fig. 5 A- Fig. 5 C are the copper surface texture figures of copper wiring technique method of the embodiment of the present invention；
Fig. 6 is the ratio of the electromobility service life distribution for the copper interconnection structure that present invention method and existing method are formed
Compared with figure.
Specific embodiment
Present invention method on the basis of analyzing the technical issues of present invention by obtaining, therefore detailed
Thin present invention method of introducing first introduces existing method before, is existing copper-connection work as shown in Figure 1A to Fig. 1 C
The copper surface texture figure of process；In existing copper interconnection process method, using Damascus technics formed copper interconnecting line 105 it
Coating 203 is directly formed afterwards, and this method has following feature：
First, as shown in Figure 1A, there can be one layer of copper oxide on the surface of copper interconnecting line 105 after copper interconnecting line 105
Layer 201.
Secondly, as shown in Figure 1B, coating 203 is usually the silicon nitride layer formed using chemical vapor deposition method,
Nitrogenous gas can be passed through during forming coating 203, and nitrogen and copper oxide 201 can be anti-during chemical vapor deposition method
Copper nitride layer 202 should be formed.
Again, as shown in Figure 1 C, equally, after nitrogenous gas is passed through, can also lead to during chemical vapor deposition method
Enter silicon-containing gas, and eventually form the coating 203 of silicon nitride composition.Shown in Fig. 1 C, coating 203 and copper interconnecting line
Cause coating 203 and copper interconnecting line 105 containing copper nitride layer 202, the presence of this copper nitride layer 202 between 105 interface
Interfacial contact it is bad, and the electromigration of copper can be easily generated, so as to reduce the electromigration lifetime of copper.
As shown in Fig. 2, it is the photo for the copper wiring technique structure that existing copper interconnection process method is formed；In copper interconnecting line
301 surface is formed with coating 302, and copper electromigration is generated in the copper shown in dotted line circle 303 and the interface of coating.
It is corresponding in the copper wiring technique structure that existing copper interconnection process method is formed
As shown in fig. 6, curve 501 is the electromobility service life distribution map for the copper interconnection structure that existing method is formed, it can be with
Find out in region shown in dotted line circle 503 there are trailing phenomenon, this is because caused by the copper diffusion of metal layer namely copper diffusion drop
The low service life of the electromigration of device.Abscissa in Fig. 6 is the service life, and ordinate CDF is cumulative distribution function (Cumulative
Distribution Function) abbreviation.
As shown in figure 3, it is the flow chart of copper wiring technique method of the embodiment of the present invention；As shown in figure 4, it is implementation of the present invention
The sectional view for the copper wiring technique structure that example method is formed；As shown in Figure 5 A to FIG. 5 C, it is copper wiring technique of the embodiment of the present invention
The copper surface texture figure of method；Copper wiring technique method of the embodiment of the present invention includes the following steps：
Step 1: as shown in figure 4, form copper interconnecting line 105 on a semiconductor substrate using Damascus technics.
Before the Damascus technics is carried out, semiconductor devices is formed on the semiconductor substrate, described half
Conductor device includes polysilicon gate and doped region, in the top of the corresponding polysilicon gate of the semiconductor devices and doped region
Contact hole 102 is formed with, the contact hole 102 passes through first layer interlayer film 101.
The Damascus technics includes：
The first barrier layer 103 is formed on 101 surface of first layer interlayer film.
Second layer interlayer film 107 is formed on 103 surface of the first barrier layer.
Lithographic definition goes out the etch areas of the second layer interlayer film 107 and the second layer interlayer film 107 is carved
Erosion forms the forming region of the copper interconnecting line 105.
The grinding technics for carrying out copper filling and copper forms the copper interconnecting line 105.It is also formed in the side of copper interconnecting line 105
There is separation layer 104.
Preferably, the Semiconductor substrate is silicon substrate.
Before the coating 106 in forming Fig. 4, subsequent step description can refer to as shown in Figure 5 A to FIG. 5 C.
As shown in Figure 5A, the surface of the copper interconnecting line 105 can be aoxidized and form copper oxide 201.
Step 2: as shown in Figure 5 B, being pre-processed to the surface of the copper interconnecting line 105, the pretreatment is by described in
The copper oxide on 105 surface of copper interconnecting line is reduced to copper, so copper oxide 201 in Fig. 5 B disappears and is all converted to copper.
Preferably, the pretreatment is pre-processed using hydrogen, using hydrogen by the oxygen on 105 surface of copper interconnecting line
Change copper reduction is copper.
Step 3: as shown in Figure 5 C, covering is formed on the surface for having carried out the pretreated copper interconnecting line 105
Corresponding coating 106 in layer 402 i.e. Fig. 4, by the way that the copper oxide on 105 surface of copper interconnecting line is converted to copper in step 2
Reduce the adhesion strength between the electromobility of the copper interconnecting line 105 and raising copper and the coating 402.
Preferably, the material of the coating 402 uses nitrogen doped silicon carbide.
Silicon-containing gas, 105 surface of the silicon-containing gas and the copper interconnecting line have been passed through when forming the coating 402
Copper react to form copper silicon intermetallic compound, the copper silicon intermetallic compound is utilized to reduce the electricity of the copper interconnecting line 105
Adhesion strength between mobility and raising copper and the coating 402.
The K values of the nitrogen doped silicon carbide of the coating 402 are 5.2.The shape of the nitrogen doped silicon carbide of the coating 402
Temperature into technique is 350 DEG C.
Present invention method is not directly formed after copper interconnecting line 105 is formed using Damascus technics
Coating 402, but first to the surface of copper interconnecting line 105 into the pretreatment be about to copper oxide and reduced, after pretreatment
The copper oxide on the surface of copper interconnecting line 105 eliminates and is directly copper, therefore can prevent mutual in copper in 402 forming process of coating
The surface of line 105 forms copper nitride, the copper and coating that the copper nitride so as to eliminate the surface of copper interconnecting line 105 is brought
402 contact bad and easy the technical issues of generating electromigration；Moreover, present invention method is on the copper surface of non-oxidation copper
Between formed coating 402, also it is tender realize the surface of copper interconnecting line 105 formation copper silicon compound, due to changing between copper silicon metal
Closing object has high resistance therefore can slow down copper toward dielectric migration rate, and copper silicon intermetallic compound is copper wire and covering
Layer 402 provides better adhesive force, finally can be so that the intrinsic electromigration lifetime of contact hole 102 extends.
As shown in fig. 6, curve 502 is the electromobility service life distribution map for the copper interconnection structure that the embodiment of the present invention is formed,
It can be seen that the trailing phenomenon shown in the dotted line circle 503 of Fig. 6 is not present in region shown in dotted line circle 504, this is because of the invention
Embodiment method forms the interface of better copper and coating, caused by reducing the electromobility of copper, so the present invention is real
The service life of electromigration of device can be improved by applying a method, from fig. 6, it can be seen that curve 502 is in the right side of curve 501, whole longevity
Life is improved.
The present invention has been described in detail through specific embodiments, but these not form the limit to the present invention
System.Without departing from the principles of the present invention, those skilled in the art can also make many modification and improvement, these also should
It is considered as protection scope of the present invention.
Claims (9)
- A kind of 1. copper wiring technique method, which is characterized in that include the following steps：Step 1: copper interconnecting line is formed using Damascus technics on a semiconductor substrate；Step 2: the surface of the copper interconnecting line is pre-processed, it is described to pre-process the oxidation on the copper interconnecting line surface Copper reduction is copper；Step 3: coating is formed on the surface for carrying out the pretreated copper interconnecting line, by being incited somebody to action in step 2 The copper oxide on the copper interconnecting line surface is converted to copper and reduces the electromobility of the copper interconnecting line and improve copper and described cover Adhesion strength between cap rock.
- 2. copper wiring technique method as described in claim 1, it is characterised in that：The pretreatment of step 2 using hydrogen into Row pretreatment, copper is reduced to using hydrogen by the copper oxide on the copper interconnecting line surface.
- 3. copper wiring technique method as described in claim 1, it is characterised in that：The material of coating described in step 3 uses Nitrogen doped silicon carbide.
- 4. copper wiring technique method as claimed in claim 3, it is characterised in that：It is passed through when the coating is formed in step 3 There are a silicon-containing gas, the copper on the silicon-containing gas and the copper interconnecting line surface reacts to form copper silicon intermetallic compound, utilizes institute State the adherency between the electromobility of the copper silicon intermetallic compound reduction copper interconnecting line and raising copper and the coating Power.
- 5. copper wiring technique method as described in claim 1, it is characterised in that：Damascus work is being carried out in step 1 Before skill, semiconductor devices is formed on the semiconductor substrate, the semiconductor devices includes polysilicon gate and doped region, It is formed with contact hole above the corresponding polysilicon gate of the semiconductor devices and doped region, the contact hole is through the Film between from level to level.
- 6. copper wiring technique method as claimed in claim 5, it is characterised in that：The Damascus technics includes：The first barrier layer is formed in the first layer interlayer film surface；Second layer interlayer film is formed in first barrier layer surface；Lithographic definition go out the etch areas of the second layer interlayer film and the second layer interlayer film is performed etching to be formed it is described The forming region of copper interconnecting line；The grinding technics for carrying out copper filling and copper forms the copper interconnecting line.
- 7. copper wiring technique method as claimed in claim 6, it is characterised in that：The Semiconductor substrate is silicon substrate.
- 8. copper wiring technique method as claimed in claim 4, it is characterised in that：The K of the nitrogen doped silicon carbide of the coating It is worth for 5.2.
- 9. copper wiring technique method as claimed in claim 4, it is characterised in that：The shape of the nitrogen doped silicon carbide of the coating Temperature into technique is 350 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711138181.4A CN108054136A (en) | 2017-11-16 | 2017-11-16 | Copper wiring technique method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711138181.4A CN108054136A (en) | 2017-11-16 | 2017-11-16 | Copper wiring technique method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108054136A true CN108054136A (en) | 2018-05-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711138181.4A Pending CN108054136A (en) | 2017-11-16 | 2017-11-16 | Copper wiring technique method |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6429128B1 (en) * | 2001-07-12 | 2002-08-06 | Advanced Micro Devices, Inc. | Method of forming nitride capped Cu lines with reduced electromigration along the Cu/nitride interface |
| CN1372313A (en) * | 2001-02-21 | 2002-10-02 | 日本电气株式会社 | Method for making semiconductor device |
| CN1457095A (en) * | 2002-05-08 | 2003-11-19 | 日本电气株式会社 | Semiconductor device with siliceous metal wiring layer and manufacturing method thereof |
| US20060281299A1 (en) * | 2004-08-18 | 2006-12-14 | Jei-Ming Chen | Method of fabricating silicon carbide-capped copper damascene interconnect |
-
2017
- 2017-11-16 CN CN201711138181.4A patent/CN108054136A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1372313A (en) * | 2001-02-21 | 2002-10-02 | 日本电气株式会社 | Method for making semiconductor device |
| US6429128B1 (en) * | 2001-07-12 | 2002-08-06 | Advanced Micro Devices, Inc. | Method of forming nitride capped Cu lines with reduced electromigration along the Cu/nitride interface |
| CN1457095A (en) * | 2002-05-08 | 2003-11-19 | 日本电气株式会社 | Semiconductor device with siliceous metal wiring layer and manufacturing method thereof |
| US20060281299A1 (en) * | 2004-08-18 | 2006-12-14 | Jei-Ming Chen | Method of fabricating silicon carbide-capped copper damascene interconnect |
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Application publication date: 20180518 |
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