CN107978631B - Thin film transistor film layer, manufacturing method and device - Google Patents

Abstract

The invention discloses a thin film transistor film layer, a manufacturing method and a device. The film comprises a first film layer, a second film layer, a third film layer, a fifth film layer, a first patterned film layer and a second patterned film layer, wherein the second film layer is arranged on the first film layer, the third film layer is arranged on the second film layer, the fifth film layer is arranged on the third film layer, the first patterned film layer is arranged on the fifth film layer, and the second patterned film layer is arranged on the first patterned film layer. The second patterned film layer in the film layer structure, the manufacturing method and the device is obtained by directly arranging the second patterned film layer on the basis of the first patterned film layer, and complex processes such as spin-coating photoetching and wet etching are not needed, so that the process period is shortened, and the cost for manufacturing the thin film transistor is reduced.

Description

A thin film transistor film layer, manufacturing method and device

Technical Field

The present invention relates to the field of transistor manufacturing, and in particular to a thin film transistor film layer, a manufacturing method and a device.

Background technique

At present, in the practical applications of liquid crystal display, organic electroluminescence, touch screen and other fields, thin film transistors are required to control the opening and closing of pixels. Therefore, high-performance and low-cost thin film transistors have always been the peak that many researchers have been climbing. However, the patterning process of the electrode layer and the insulating layer in the manufacture of thin film transistors is complicated and needs to be completed through five photolithography and etching processes. Therefore, improving the patterning of the film layer can quickly prepare thin film transistors. The traditional patterning process includes: (1) sputtering the film layer on a clean glass substrate; (2) spin coating photoresist and pre-baking; (3) using photolithography equipment and mask templates to expose the photoresist to partially denature it and make it easy to dissolve in the developer; (4) using the developer to dissolve part of the photoresist to expose a specific position of the film layer for etching; (5) using the corresponding etching solution to etch the exposed film layer, while the unexposed film layer is not affected; (6) removing the photoresist to complete the patterning of the film layer. The traditional method of making thin film transistor film layers is to achieve patterning through at least 5 photolithography and etching processes, which has a long process cycle and high production cost. The etching process is currently an essential process for achieving patterning of electrodes, active layers and insulating layers. Wet etching or dry etching can be used, but both methods have shortcomings. For example, dry etching requires higher equipment and is more expensive; wet etching uses chemical reagents, which poses certain environmental hazards and potential damage to the human body.

Therefore, how to provide a thin film transistor film layer, manufacturing method and device that shortens the process cycle, reduces the cost of manufacturing thin film transistors and is safe for the human body has become a technical problem that technical personnel in this field urgently need to solve.

Summary of the invention

The object of the present invention is to provide a thin film transistor film layer, a manufacturing method and a device which have low film forming cost, fewer etching processes and are safe for the human body.

To achieve the above object, the present invention provides the following solutions:

A thin film transistor film layer, the film layer comprising: a first film layer, a second film layer, a third film layer, a fifth film layer, a first patterned film layer and a second patterned film layer, the second film layer is arranged on the first film layer, the third film layer is arranged on the second film layer, the fifth film layer is arranged on the third film layer, the first patterned film layer is arranged on the fifth film layer, and the second patterned film layer is arranged on the first patterned film layer.

Optionally, the film layer further includes a fourth film layer, the fourth film layer is located on the third film layer, and the fourth film layer is used to dissolve the developer to obtain the fifth film layer.

To achieve the above object, the present invention also provides the following solution:

A method for manufacturing a thin film transistor film layer, the method comprising:

sputtering a first film layer on a cleaned glass substrate;

Coating a positive/negative polarity material on the first film layer to obtain a second film layer;

Spin-coating photoresist on the second film layer and performing pre-baking to form a third film layer of positive polarity material;

exposing the third film layer to obtain a denatured fourth film layer, so that the fourth film layer can be dissolved in a developer;

Dissolving the photoresist with a developer to obtain a fifth film layer with exposed intervals;

Etching the exposed portion of the fifth film layer using an etching solution;

removing the photoresist to obtain a first patterned film layer;

A negative/positive polarity material is spin-coated on the first patterned film layer to obtain a second patterned film layer.

Optionally, the second film layer is obtained by coating a positive/negative polarity material on the first film layer, and the coating method includes spin coating, blade coating and drop coating.

Optionally, the polar material is a material having positive and negative properties that is stable at room temperature.

Optionally, the polar material includes: iron phase crystal material, polar high molecular polymer and space charge electret material.

To achieve the above object, the present invention also provides the following solution:

A manufacturing device for a thin film transistor film layer, the manufacturing device comprising:

A first film layer acquisition module, used for sputtering a first film layer on a cleaned glass substrate;

A second film layer acquisition module, used for coating a positive/negative polarity material on the first film layer to obtain a second film layer;

A third film layer acquisition module, used for spin coating photoresist on the second film layer and performing pre-baking to form a third film layer of positive polarity material;

A fourth film layer acquisition module, used for exposing the third film layer to obtain a denatured fourth film layer, so that the fourth film layer can be dissolved in a developer;

A fifth film layer acquisition module, used for dissolving the photoresist with a developer to obtain a fifth film layer with exposed intervals;

An etching module, used for etching the exposed portion of the fifth film layer using an etching solution;

A first patterned film layer acquisition module, used for removing the photoresist to obtain a first patterned film layer;

The second patterned film layer acquisition module is used to coat a negative/positive polarity material on the first patterned film layer to obtain a second patterned film layer.

Optionally, the polar material in the second film layer acquisition module and the second patterned film layer acquisition module is a material having positive and negative properties that can exist stably at room temperature.

Optionally, the polar materials in the second film layer acquisition module and the second patterned film layer acquisition module include: iron phase crystal material, polar high molecular polymer and space charge electret material.

According to the specific embodiments provided by the present invention, the present invention discloses the following technical effects:

The present invention directly obtains the second patterned film layer on the basis of the first patterned film layer, without the need to reconstruct the first film layer, the second film layer, the third film layer, and the fifth film layer to obtain the second patterned film layer. Obviously, the film layer structure of the present invention can shorten the manufacturing process cycle of the patterned film layer and reduce the cost of manufacturing the thin film transistor film layer.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

FIG1 is a diagram showing a film layer structure of a thin film transistor according to Embodiment 1 of the present invention;

FIG2 is a flow chart of a method for manufacturing a thin film transistor film layer according to Embodiment 2 of the present invention;

3 is a structural diagram of a manufacturing device for a thin film transistor film layer according to Embodiment 3 of the present invention;

FIG4 is a schematic diagram of patterning of polarized materials according to Example 3 of the present invention;

FIG5 is a schematic diagram of manufacturing an active layer according to Embodiment 3 of the present invention;

FIG. 6 is a schematic diagram of manufacturing the light-emitting layer in Example 3 of the present invention.

Detailed ways

The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

The object of the present invention is to provide a thin film transistor film layer, a manufacturing method and a device which have low film forming cost, fewer etching processes and are safe for the human body.

In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

Embodiment 1:

FIG1 is a diagram of a thin film transistor film layer structure according to Embodiment 1 of the present invention. As shown in FIG1 , a thin film transistor film layer includes: a first film layer 1, a second film layer 2, a third film layer 3, a fifth film layer 5, a first patterned film layer 6, and a second patterned film layer 7, wherein the second film layer 2 is disposed on the first film layer 1, the third film layer 3 is disposed on the second film layer 2, the fifth film layer 5 is disposed on the third film layer 3, the first patterned film layer 6 is disposed on the fifth film layer 5, and the second patterned film layer 7 is disposed on the first patterned film layer 6.

The film layer further includes a fourth film layer 4 , which is located on the third film layer 3 , and is used to dissolve a developer to obtain the fifth film layer 5 .

Embodiment 2:

FIG2 is a flow chart of a method for manufacturing a thin film transistor film layer according to Embodiment 2 of the present invention. As shown in FIG2 , a method for manufacturing a thin film transistor film layer comprises:

Step 101: sputtering a first film layer on a cleaned glass substrate;

Step 102: coating the first film layer with a positive/negative polarity material to obtain a second film layer;

Step 103: Spin-coating photoresist on the second film layer and performing pre-baking to form a third film layer of positive polarity material;

Step 104: exposing the third film layer to obtain a denatured fourth film layer, so that the fourth film layer can be dissolved in a developer;

Step 105: dissolving the photoresist with a developer to obtain a fifth film layer with exposed intervals;

Step 106: etching the exposed portion of the fifth film layer using an etching solution;

Step 107: removing the photoresist to obtain a first patterned film layer;

Step 108: coating a negative/positive polarity material on the first patterned film layer to obtain a second patterned film layer.

The coating method in step 102 includes spin coating, scraper coating and drop coating.

The polar material is a material with positive and negative properties that exists stably at room temperature. The polar material includes: iron phase crystal material, polar high molecular polymer and space charge electret material.

Embodiment 3:

FIG3 is a structural diagram of a manufacturing device for a thin film transistor film layer according to Embodiment 3 of the present invention. As shown in FIG3 , a manufacturing device for a thin film transistor film layer comprises:

A first film layer acquisition module 201, used for sputtering a first film layer on a cleaned glass substrate;

A second film layer acquisition module 202, used for coating a positive/negative polarity material on the first film layer to obtain a second film layer;

A third film layer acquisition module 203, used for spin coating photoresist on the second film layer and performing pre-baking to form a third film layer of positive polarity material;

A fourth film layer acquisition module 204 is used to expose the third film layer to obtain a denatured fourth film layer, so that the fourth film layer can be dissolved in a developer;

A fifth film layer acquisition module 205, used for dissolving the photoresist with a developer to obtain a fifth film layer with exposed intervals;

An etching module 206, used for etching the exposed portion of the fifth film layer using an etching solution;

A first patterned film layer acquisition module 207, used to remove the photoresist to obtain a first patterned film layer;

The second patterned film layer acquisition module 208 is used to coat a negative/positive polarity material on the first patterned film layer to obtain a second patterned film layer.

Fig. 4 is a schematic diagram of patterning polarized materials in Example 3 of the present invention. As shown in Fig. 4, since the surface affinity between the positive and negative materials is large, and the surface affinity between the negative material and the substrate is small, the patterning of the upper film 303 can be achieved according to the different surface affinities. After the lower film 302 is made, a non-polar layer 304 can also be made and then the positive polarity material can be spin-coated to obtain the patterned upper film 303.

FIG5 is a schematic diagram of the active layer manufacturing of Example 3 of the present invention. As shown in FIG5, first, a substrate 401 such as glass, silicon wafer or polyimide is cleaned, and then a conventional photolithography and etching process is used to pattern a gate electrode 402 with a positive polarity or a negative polarity, and then an insulating layer 403 is sputtered, and finally a semiconductor material with a negative polarity or a positive polarity is spin-coated. In the process of spin-coating the material with opposite polarity on the insulating layer 403, the polar materials 402 and 404 in region A have a greater affinity, while the polar materials 404 in non-region A have a smaller affinity with the insulating layer 403, thereby directly obtaining a patterned active layer 404.

FIG6 is a schematic diagram of the manufacturing of the light-emitting layer in Example 3 of the present invention. As shown in FIG6, first, a substrate 501 such as clean glass, silicon wafer or polyimide is used, and a gate 502, insulating layers 503, 505 and 507, an active layer 504, and a source/drain 506 are manufactured thereon, wherein the insulating layer 507 is provided with a contact hole to lead the drain 506 out to connect to the pixel electrode 508; then, a negative polarity material or a positive polarity material is used on the insulating layer 507 and patterned to obtain a pixel electrode layer 508;

Next, the positive polarity material or the negative polarity material is spin-coated. Since the insulating layer 507 is a non-polar material and the pixel electrode layer 408 is a negative polarity or a positive polarity, the negative polarity material has a greater affinity with the positive polarity material, while the polarity material has a smaller affinity with the non-polarity material. Therefore, no negative/positive polarity material film is formed on the insulating layer 507, and a patterned light-emitting layer 509 is directly formed on the pixel electrode layer 408. Finally, the entire device is baked to completely solidify the polarity material.

The process of making a top-gate or dual-gate TFT is similar to the process of making a bottom-gate TFT mentioned above. The only difference is the order of making the source/drain electrodes and the active layer. For the dual-gate TFT, the top gate electrode is made on the insulating layer after the bottom-gate TFT is completed.

The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

This article uses specific examples to illustrate the principles and implementation methods of the present invention. The above examples are only used to help understand the method and core ideas of the present invention. At the same time, for those skilled in the art, according to the ideas of the present invention, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as limiting the present invention.

Claims (7)

1. A method of manufacturing a thin film transistor film, the method comprising:

sputtering a first film layer on the cleaned glass substrate;

coating a positive/negative polarity material on the first film layer to obtain a second film layer;

Spin-coating photoresist on the second film layer and performing pre-baking to form a third film layer of positive polarity material;

Exposing the third film layer to obtain a denatured fourth film layer, so that the fourth film layer can be dissolved in a developing solution;

Dissolving the photoresist by using a developing solution to obtain a fifth film layer with exposed intervals;

Etching the exposed part in the fifth film layer by using etching liquid;

Removing the photoresist to obtain a first patterned film layer;

And coating a negative/positive polarity material on the first patterned film layer to obtain a second patterned film layer, wherein the surface affinity between the positive and negative polarity materials is greater than the surface affinity between the polar material and the substrate.

2. The method for manufacturing a thin film transistor film according to claim 1, wherein the coating of the positive/negative polarity material on the first film layer yields a second film layer, wherein the coating method includes spin coating, knife coating, and drip coating.

3. The method for manufacturing a thin film transistor film according to claim 1, wherein the polar material is a material having positive and negative properties which exist stably at room temperature.

4. The method of manufacturing a thin film transistor film according to claim 1, wherein the polar material comprises: iron phase crystal material, polar high molecular polymer and space charge electret material.

5. A manufacturing apparatus of a thin film transistor film layer, the manufacturing apparatus comprising:

the first film layer acquisition module is used for sputtering a first film layer on the cleaned glass substrate;

the second film layer acquisition module is used for coating positive/negative polarity materials on the first film layer to obtain a second film layer;

The third film layer acquisition module is used for spin-coating photoresist on the second film layer and performing pre-baking to form a third film layer of positive-polarity material;

The fourth film layer acquisition module is used for exposing the third film layer to obtain a denatured fourth film layer, so that the fourth film layer can be dissolved in a developing solution;

The fifth film layer acquisition module is used for dissolving the photoresist by using a developing solution to obtain a fifth film layer with exposed intervals;

the etching module is used for etching the exposed part in the fifth film layer by using etching liquid;

The first patterning film layer acquisition module is used for removing the photoresist to obtain a first patterning film layer;

And the second patterned film layer acquisition module is used for spin-coating a negative/positive polarity material on the first patterned film layer to obtain a second patterned film layer according to the fact that the surface affinity between the positive and negative polarity materials is greater than the surface affinity between the polar material and the substrate.

6. The apparatus according to claim 5, wherein the polar materials in the second film formation module and the second patterned film formation module are materials having positive and negative properties that can exist stably at room temperature.

7. The apparatus for manufacturing a thin film transistor according to claim 6, wherein the polar materials in the second film capture module and the second patterned film capture module comprise: iron phase crystal material, polar high molecular polymer and space charge electret material.