CN102117767A - Fully transparent TFT (Thin Film Transistor) active matrix manufacturing method based on colloidal sol mode - Google Patents

Abstract

The invention relates to a sol-based fully transparent TFT active matrix manufacturing method. In this method, the sol is transferred to the glass substrate by sol spin coating, and the patterns of the gate electrode layer, insulating layer, active layer, source-drain electrode layer and protective layer of the TFT active matrix are directly realized by photolithography. The TFT active matrix manufacturing process using this method is simple, reduces wet etching and other process steps, saves dry etching and other process steps, and does not require investment in large-scale film-forming equipment such as CVD and PVD, greatly saving process equipment , The input of process manufacturing cost, and the manufactured TFT active matrix is fully transparent, and the aperture ratio increases.

Description

Sol-based fully transparent TFT active matrix manufacturing method

technical field

The invention relates to a manufacturing method in the field of flat panel display manufacturing, in particular to a manufacturing method based on a sol-type fully transparent TFT (thin film transistor) active matrix, which uses a sol spin coating manufacturing method to realize a fully transparent TFT active matrix. Matrix production.

Background technique

The full English name of TFT is Thin Film Transistor, which means thin film transistor. The existing TFT active matrix adopts the following manufacturing process (see Figure 1): Firstly, the bottom gate metal layer is sputtered on the cleaned TFT glass substrate, and the bottom gate metal layer is patterned by photolithography to obtain the bottom gate metal layer. The pattern of the gate electrode; next, an insulating layer, an active layer, and an ohmic contact layer are sequentially deposited on the patterned bottom gate metal layer; The layer is etched away, but the ohmic contact layer at the source and drain electrodes is retained; finally, a layer of metal electrode layer is sputtered, and the source and drain electrodes of the TFT active matrix are obtained after patterning. The thin film of the TFT active matrix of this process is grown on the glass substrate, which requires the investment of PVD, CVD and other process equipment. The manufacturing process is complicated and the process requirements are very high, and some of the production processes need to be manufactured and processed at high temperature, and the process cycle is low. , high manufacturing cost.

The present invention adopts the sol-type reagent as the manufacturing material of the TFT active matrix, transfers the sol to the glass substrate by spin coating, and directly realizes the gate electrode layer, the insulating layer, the active matrix of the TFT active matrix by photolithography. Patterned transfer of source layer, source-drain electrode layer, and protective layer, the TFT active matrix manufacturing process using this method is simple, reduces wet etching and other process steps, saves dry etching and other process steps, and does not require CVD and PVD, etc. The investment in large-scale film-forming equipment greatly saves the investment in process equipment and process manufacturing costs, and the manufactured TFT active matrix is fully transparent, and the aperture ratio increases.

Contents of the invention

The purpose of the present invention is to provide a method for manufacturing a fully transparent TFT active matrix based on a sol-type fully transparent TFT based on the defects of the existing technology. , Insulation layer, source electrode, and drain electrode pattern making, the processing technology is simple, and the aperture ratio of the device can be greatly improved.

To achieve the above object, the present invention adopts the following technical solutions:

A method for manufacturing a sol-based fully transparent TFT active matrix, characterized in that the gate electrode layer, active layer, source-drain electrode layer and protective layer of the TFT active matrix are fabricated by means of sol spin coating. The manufacturing process steps are as follows:

1) Use a spin coater to spin-coat the gate sol material on the cleaned glass substrate, so that the gate sol material is evenly distributed on the glass substrate; all the sol materials are pre-baked and cured, and then exposed to photolithography and developed , post-baking to obtain the gate pattern;

2) Spin-coat a layer of organic insulating film as the insulating layer, bake before heating, expose, develop, and post-baking, so as to realize the transfer of the insulating layer pattern;

3) Spin-coat the sol material that constitutes the active layer, then perform pre-baking, exposure, development, post-baking, and wet-etch the active layer, so as to realize the preparation of the active layer material and the transfer of the active layer pattern;

4) Spin-coat the sol material that constitutes the source-drain electrode layer, and perform pre-baking, exposure, development, and post-baking to transfer the pattern of the source electrode and the drain electrode to the substrate;

5) Spin-coat the sol material that constitutes the protective layer. After pre-baking, exposure, development, and post-baking, contact holes are made, so that the contact hole pattern is transferred to the substrate.

So far, the sol-type fully transparent TFT active matrix manufacturing process of the present invention is completed.

Compared with the prior art, the present invention has the following obvious outstanding substantive features and significant advantages:

The TFT active matrix manufactured by the invention is fully transparent and manufactured by a sol-type method, the manufacturing process is simple, and the investment requirement for equipment is low, and the aperture ratio of the manufactured TFT active matrix is increased.

Description of drawings

Figure 1 Traditional TFT active matrix manufacturing process flow diagram;

Fig. 2 The present invention is based on sol-type fully transparent TFT active matrix manufacturing method process flow block diagram;

Figure 3-Figure 12 Schematic diagram of the structure of the TFT active matrix in the sol-type fully transparent TFT active matrix manufacturing process.

Detailed ways

Preferred embodiments of the present invention are described below in conjunction with accompanying drawing:

Embodiment 1: Referring to Figure 2, the present invention is based on the sol-type fully transparent TFT active matrix manufacturing method, and the sol is evenly coated on the substrate by means of spin coating machine, and is directly realized by photolithography and development. The graphic production of each layer of film,

Thereby realizing the manufacture of TFT active matrix.

First, evenly coat a layer of ITO sol film 21 on the cleaned glass substrate 10, wherein the ITO sol film 21 is a photosensitive material; after the ITO sol film 21 is placed on a hot plate, it is exposed and developed, and placed Bake and solidify on the post-baking hot plate to complete the grid electrode layer 20; the next step is to evenly coat a layer of insulating layer organic film 31, perform exposure and development after pre-baking, and post-baking and curing to form an insulating layer 30; Coating a layer of IGZO sol film 41, also after pre-baking, exposure, development, post-baking and other processes, the transfer of the pattern of the active layer 40 is realized; finally, the source and drain electrode layer 50 is coated on the active layer 40, Using the ITO sol film 51, pre-baking, exposure, development, post-baking and other processes are used to make the source electrode 52 and the drain electrode 53; a layer of insulating organic film 61 is applied again as the protective layer 60, and the pre-baking, photolithography, After development and post-baking, contact holes 62 are formed.

The sol-based fully transparent TFT active matrix of the present invention is manufactured.

Embodiment 2: This embodiment is basically the same as Embodiment 1, and the special features are: Referring to Fig. 2, a glass substrate of 200mm'200mm is selected as the glass substrate 10 manufactured by the sol-type fully transparent TFT active matrix; the ITO sol film 21 The ingredients of the prepared materials include: trimethoxybutyl acetate, propylene glycol methyl ether acetate, and the viscosity is 13~15cP; IGZO sol film 41 is prepared by dissolving zinc acetate dihydrate, gallium nitrate hydrate, and indium nitrate hydrate in ammonia water. become.

Referring to Fig. 3 and Fig. 4, at first on the glass substrate 10 uniform coating thickness is the ITO sol film 21 of 300nm, ITO sol film 21 is a photosensitive material, can directly photolithographic development manufacture; ITO sol film 21 is placed on the hot plate On the surface, bake at 120°C for 12 minutes, then expose under the gate electrode mask, the exposure dose is 250mJ/cm ^-2 , place it in a developer for development, wash, and dry, and then expose it at 220°C Bake for 60 minutes to completely cure the ITO sol film 21 and complete the fabrication of the gate electrode layer 20 .

Referring to Fig. 5 and Fig. 6, on the gate electrode layer 20, evenly coating one deck thickness is the insulating layer organic film 31 of 200nm as insulating layer, and the material selected for use in the present invention is JSR PC405G, and it is photosensitive material; Pre-baking at ℃ for 60 seconds, followed by photolithography treatment with an exposure dose of 100 mJ/cm ^-2 , development, cleaning, drying, and baking at 220°C for 60 minutes to completely cure the organic film 31 of the insulating layer. The insulating layer 30 is finished.

Referring to Figures 7 and 8, an IGZO sol film 41 with a thickness of 300nm is evenly coated on the insulating layer 30, heated and baked at 180°C for 60 minutes to complete the active layer; Resist, after pre-baking, exposure, development, cleaning, drying, post-baking and other process steps, it is wet-etched, etched with IGZO etching solution to obtain the pattern of the active layer 40, and then stripped Filming, washing, and drying, the active layer 40 is fabricated.

Referring to Fig. 9 and Fig. 10, coat the ITO sol film 51 again with a coating thickness of 200nm, place the ITO sol film 51 on a hot plate, and bake it at 120°C for 12 minutes, after exposure, development, cleaning, blowing, etc. After drying, bake at 220° C. for 60 minutes to completely cure the ITO sol film 51 ; obtain the pattern of the source electrode 52 and the drain electrode 53 after photolithography; the source-drain electrode layer 50 is completed.

Referring to Fig. 11 and Fig. 12, an insulating layer organic film 61 with a thickness of 300nm is coated, which is manufactured using the same materials and process conditions as the insulating layer 30, and the mask plate is made of a contact hole mask plate, after exposure, development, After cleaning, drying, and post-baking, a pattern of contact holes 62 is formed, and the protective layer 60 is completed.

So far, the manufacturing process based on the sol-type fully transparent TFT active matrix is completed.

Claims (1)

1. A method for manufacturing a fully transparent TFT active matrix based on sol formula, characterized in that the gate electrode layer (20), insulating layer (30), active layer (40) of TFT active matrix are realized by means of sol spin coating ), the source-drain electrode layer (50) and the protective layer (60), the manufacturing process steps are as follows: 1) use a spin coater to spin-coat the grid sol material on the cleaned glass substrate (10), so that the grid The sol material is evenly distributed on the glass substrate (10); the sol material is pre-baked and cured, and then exposed to photolithography, developed, and post-baked to obtain the pattern of the gate electrode layer (20); 2) spin-coating a layer The insulating organic film (31) is used as the insulating layer (30), which is baked before heating, exposed, developed, and post-baked, thereby realizing the transfer of the pattern of the insulating layer (30); 3) spin-coating the sol material to form the active layer (40), and then Perform pre-baking, exposure, development, post-baking, and wet-etch the active layer (40), thereby realizing the preparation of the active layer material and the transfer of the pattern of the active layer (40); 4) Spin coating to form the source-drain electrode layer (50) sol material, and do pre-baking, exposure, development, post-baking, transfer the pattern of source electrode and drain electrode to the substrate; , developing, and post-baking, making a contact hole (62), so that the contact hole pattern is transferred to the substrate.

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