CN107968128B - Low-consumable, high-performance back-contact conductive integrated backplane and manufacturing method thereof - Google Patents

Abstract

The present invention gives the production methods that a kind of low-material-consumption, high-performance back contacts conduction integrate backboard, the following steps are included: forming copper film by magnetron sputtering copper facing in the flexible substrate of insulation, copper film constitutes conducting circuit pattern on flexible substrates, copper film with a thickness of 1nm~100nm；Copper coating is generated on above-mentioned copper film using electroless copper plating method, controls different location copper coating thickness；Above-mentioned conductive backings are cleaned and dried, obtain variable density reticular structure low-material-consumption, high-performance back contacts conduction integrates backboard.By generating copper coating, reaches circuit part width and thickness is controllable, the conducting channel cross section by electric current can be optimized, consumptive material is reduced after circuit optimization, and package assembling will not cause hot-spot；10 DEG C higher than cell piece series position of position temperature or so of original confluence, conductive backings of this optimization can solve, and it is increasingly complex to make figure, the higher circuit of resolution requirement, be particularly suitable for the more and complicated back contacts type cell encapsulation of the back electrodes such as IBC.

Description

Low-consumable, high-performance back-contact conductive integrated backplane and manufacturing method thereof

technical field

The invention relates to a low-consumable, high-performance back-contact conductive integrated backplane.

The invention also relates to a method for manufacturing a low-consumable, high-performance back-contact conductive integrated backplane.

Background technique

Copper-based conductive integrated backplanes are widely used in the field of electronic components, and the cost of copper materials accounts for 65% of the entire copper-based conductive integrated backplane. Traditional copper-based conductive integrated backplanes have the following two manufacturing methods: 1. Copper foil Composite with the adhesive film, engrave two grooves with a laser, remove the middle part of the groove to achieve the insulation effect, or directly use the method of making a circuit board to etch and remove the part that needs insulation; 2. Use the template and electrolytic copper foil process to form directly. But both methods have: (1) many consumables; (2) the width and thickness of the conductive layer cannot be locally adjusted; (3) the local current of the packaged component is large, and it is easy to generate heat; (4) it is not easy to form a complex circuit and many other disadvantages .

Contents of the invention

The technical problem to be solved by the present invention is to provide a low-consumable, high-performance back-contact conductive integrated backplane that can improve component efficiency, reduce potential safety hazards, and reduce copper consumables.

The technical problem to be solved by the present invention is to provide a method for manufacturing a low-consumable, high-performance back-contact conductive integrated backplane.

In order to solve the above technical problems, the present invention provides a method for manufacturing a low-consumable, high-performance back-contact conductive integrated backplane, which includes the following steps:

a) Copper film is formed by magnetron sputtering copper plating on an insulating flexible substrate, and the line type and pattern are designed according to the current density of the component to form a variable density network structure. The copper film forms a conductive circuit pattern on the flexible substrate, and the copper The thickness of the film is 1nm-100nm;

b) The electrochemical copper plating method is used to form a copper coating on the copper film obtained in step a), and the thickness of the copper coating at different positions is controlled. The height of the copper coating at the interconnection position of the battery sheet is 1 μm to 30 μm, and the height of the copper coating at the position where the current confluence is drawn out 30μm～100μm;

c) cleaning and drying the conductive integrated backplane obtained in step b), to obtain consumables with a variable density network structure and a high-performance back-contact conductive integrated backplane.

As preferred in the present invention, the copper film constituting the conductive circuit pattern is directly formed on the flexible substrate by using a mask method during the copper plating by magnetron sputtering in step a).

As preferred in the present invention, the copper film formed after magnetron sputtering copper plating in step a) is chemically etched or laser etched to form a conductive circuit pattern, and the conductive circuit pattern forms a variable density network structure.

As preferred in the present invention, the thickness of the copper film in step a) is 5nm-20nm.

After adopting such a method, the conductive circuit pattern obtained in step a) is consistent with the pattern in the traditional technology, but the thickness of the copper film formed by magnetron sputtering copper plating is different from the thickness of the copper foil directly used in the traditional technology. This step controls the width of the local conductive circuit;

Through step b) to generate a copper plating layer, the local width and thickness of the circuit can be controlled, and the cross-section of the conductive circuit through which the current passes can be optimized. After the circuit is optimized, the consumables are reduced; the consumables of conventional products are saved by 40%. After the circuit is optimized, the packaged components will not cause local Overheating; the temperature of the original confluence position is about 10°C higher than that of the cells in series. This optimized conductive backplane can solve the problem, and can make conductive circuits with more complex graphics and higher resolution requirements, especially suitable for IBC (digital finger battery) The back contact conductive integrated back plate used) and other back contact type battery packages with more and complex back electrodes.

The present invention also provides a low-consumable, high-performance back-contact conductive integrated backplane, which is obtained by adopting the manufacturing method of the above-mentioned low-consumable, high-performance back-contact conductive integrated backplane.

After adopting such a structure, the components of the back-contact conductive integrated backplane can reduce copper consumables, reduce potential safety hazards, improve component efficiency, and reduce series resistance.

Detailed ways

Embodiment one

The manufacturing method of the low-consumable, high-performance back-contact conductive integrated backplane includes the following steps:

a) Copper film is formed by magnetron sputtering copper plating on an insulating flexible substrate, and the line type and pattern are designed according to the current density of the component. The copper film of the circuit pattern, in this step, the width of the local conductive circuit is controlled, the copper film has a variable density network structure, and the thickness of the copper film is 1nm;

b) The electrochemical copper plating method is used to form a copper coating on the copper film obtained in step a), and the local process is regulated to control the thickness of the copper coating at different positions. The coating height is 30μm;

c) cleaning and drying the conductive integrated backplane obtained in step b), to obtain a low-consumable, high-performance back-contact conductive integrated backplane.

The total thickness of the copper film and copper plating at the cell interconnection position of the back contact conductive integrated backplane obtained in this embodiment reaches 2001nm, and the total thickness of the copper film and copper plating at the current confluence and extraction position reaches 30001nm.

Compared with the traditional copper-based conductive integrated backplane, the current/voltage parameters of the low-consumable, high-performance back-contact conductive integrated backplane in this embodiment generally use 35 μm thick copper foil, and the copper consumable for packaging a component is about 0.36kg. The embodiment obtains the conductive circuit pattern and the width of the conductive circuit pattern and the pattern of the low-consumable, high-performance back-contact conductive integrated backplane are the same as those of the traditional technology, and the back-contact conductive integrated backplane is obtained by using this embodiment. 0.21kg, saving 40% in the consumption of copper consumables.

The back-contact conductive integrated backplane achieves the optimization of the conductive circuit by controlling the thickness of copper plating at different positions. Compared with the traditional copper-based conductive integrated backplane, the packaging components will not cause local overheating and are suitable for low current (less than 1A) High voltage component packaging.

Embodiment two

The manufacturing method of the low-consumable, high-performance back-contact conductive integrated backplane includes the following steps:

a) A copper film is formed on an insulating flexible substrate by magnetron sputtering copper plating, and after magnetron sputtering copper plating, a copper film constituting a conductive circuit pattern is formed on the copper film by chemical etching, and the conductive circuit pattern forms a variable density Network structure, the thickness of the copper film is 100nm;

b) The electroless copper plating method is used to form a copper coating on the copper film obtained in step a), and the local process is regulated to control the thickness of the copper coating at different positions. The height is 100 μm;

c) cleaning and drying the conductive integrated backplane obtained in step b), to obtain a low-consumable, high-performance back-contact conductive integrated backplane.

In this embodiment, the total thickness of the copper film and copper coating at the cell interconnection position of the low-consumable, high-performance back-contact conductive integrated backplane reaches 30100 nm, and the total thickness of the copper film and copper coating at the current converging and drawing position reaches 100100 nm.

Compared with the traditional copper-based conductive integrated backplane, the copper foil with a thickness of 182 μm is conventionally used, and the copper consumables for packaging a component are about 2.6kg. The width is the same as the pattern and width of the traditional technology, but the back contact conductive integrated backplane is obtained by using this embodiment, the copper consumable is about 1.56kg, and the consumption of copper consumable is saved by 40%.

This low-consumable, high-performance back-contact conductive integrated backplane achieves the optimization of conductive circuits by controlling the thickness of copper plating at different positions. Compared with copper-based conductive integrated backplanes, packaging components will not cause local overheating, and is mainly used for high-current assembly. package, the current is about 12A.

Embodiment three

The manufacturing method of the low-consumable, high-performance back-contact conductive integrated backplane includes the following steps:

a) A copper film is formed on an insulating flexible substrate by magnetron sputtering copper plating, and after magnetron sputtering copper plating, a copper film forming a conductive circuit pattern is formed on the copper film by laser etching, and the conductive circuit pattern forms a variable density Network structure, the thickness of the copper film is 5nm;

b) Using the electroless copper plating method to form a copper coating on the copper film obtained in step a), adjust the local process, and control the thickness of the copper coating at different positions, wherein the height of the copper coating at the interconnection position of the cells is 20 μm, and the copper coating at the position where the current flow is drawn out The height is 40 μm;

c) cleaning and drying the conductive integrated backplane obtained in step b), to obtain a low-consumable, high-performance back-contact conductive integrated backplane.

In this embodiment, the total thickness of the copper film and the copper coating at the cell interconnection position of the low-consumable, high-performance back contact conductive integrated backplane reaches 20005nm, and the total thickness of the copper film and the copper coating at the position where the current confluence is led out reaches 40005nm.

Compared with the traditional copper-based conductive integrated backplane, the copper foil with a thickness of 35 μm is conventionally used, and the copper consumables for packaging a component are about 0.50 kg. The pattern and width of the technology are the same, but the back contact conductive integrated backplane is obtained by using this embodiment, the copper consumable is about 0.30kg, and the consumption of copper consumable is saved by 40%.

The back contact conductive integrated backplane achieves the optimization of the conductive circuit by controlling the thickness of the copper plating at different positions. Compared with the copper-based conductive integrated backplane, the packaging components will not cause local overheating. It is mainly used for conventional current package packaging, and the current is about 9A.

Embodiment four

The manufacturing method of the low-consumable, high-performance back-contact conductive integrated backplane includes the following steps:

a) A copper film is formed on an insulating flexible substrate by magnetron sputtering copper plating, and after magnetron sputtering copper plating, a copper film forming a conductive circuit pattern is formed on the copper film by laser etching, and the conductive circuit pattern forms a variable density Network structure, the thickness of the copper film is 20nm;

b) Using the electroless copper plating method to generate a copper coating on the copper film obtained in step a), adjust the local process, and control the thickness of the copper coating at different positions, wherein the height of the copper coating at the interconnection position of the battery sheet is 25 μm, and the copper coating at the position where the current flow is drawn out The height is 50 μm;

c) cleaning and drying the conductive integrated backplane obtained in step b), to obtain a low-consumable, high-performance back-contact conductive integrated backplane.

In this embodiment, the total thickness of the copper film and the copper coating at the cell interconnection position of the low-consumable, high-performance back contact conductive integrated backplane reaches 25020nm, and the total thickness of the copper film and the copper coating at the position where the current confluence is led out reaches 50020nm.

Compared with the traditional copper-based conductive integrated backplane, the copper foil with a thickness of 63 μm is conventionally used, and the copper consumables for packaging a component are about 0.90 kg. The patterns and widths are the same, but the back contact conductive integrated backplane is obtained by using this embodiment, the copper consumable is about 0.54 kg, and the consumption of copper consumable is saved by 40%.

This low-consumable, high-performance back-contact conductive backplane optimizes the conductive circuit by controlling the thickness of the copper plating at different positions. Compared with the copper-based conductive integrated backplane, the packaging components will not cause local overheating, and it is mainly used for conventional current package packaging. , the current is about 9A.

The above are only four implementations of the present invention. It should be pointed out that for those skilled in the art, some modifications and improvements can be made without departing from the principles of the present invention. These should also be regarded as Belong to the protection scope of the present invention.

Claims (5)

1. the production method that a kind of low-material-consumption, high-performance back contacts conduction integrate backboard, comprising the following steps:

A) copper film is formed by magnetron sputtering copper facing in the flexible substrate of insulation, line style and figure is designed according to component current density Case forms variable density reticular structure, and copper film constitutes conducting circuit pattern on flexible substrates, copper film with a thickness of 1nm~ 100nm；

B) copper coating is generated on the copper film that step a) is obtained using electrochemical plating copper method, control different location copper coating is thick Degree, wherein the copper coating height of cell piece interconnection location is 1 μm~30 μm, and the copper coating height of electric current confluence extraction location is 30 μm~100 μm；

C) conduction for obtaining step b) integrates backboard and is cleaned and dried, and obtains low-material-consumption, the high-performance back of variable density reticular structure The conductive integrated backboard of contact.

2. the production method that low-material-consumption according to claim 1, high-performance back contacts conduction integrate backboard, it is characterized in that:

Masking method is directlyed adopt when magnetron sputtering copper facing in step a) and forms composition conducting circuit pattern on flexible substrates Copper film.

3. the production method that low-material-consumption according to claim 1, high-performance back contacts conduction integrate backboard, it is characterized in that:

Conducting circuit pattern is gone out using chemical etching or laser ablation to the copper film formed after magnetron sputtering copper facing in step a), is led Electric circuitous pattern forms variable density reticular structure.

4. the production method that low-material-consumption according to claim 1, high-performance back contacts conduction integrate backboard, it is characterized in that:

Copper film with a thickness of 5nm~20nm in step a).

5. a kind of low-material-consumption, high-performance back contacts conduction integrate backboard, it is characterized in that: using such as any one of claims 1 to 4 Low-material-consumption, the high-performance back contacts conduction collection that the production method that the low-material-consumption, high-performance back contacts conduction integrate backboard obtains At backboard.