[go: up one dir, main page]

CN103794660A - Solar cell and manufacturing method thereof - Google Patents

Solar cell and manufacturing method thereof Download PDF

Info

Publication number
CN103794660A
CN103794660A CN201210435824.2A CN201210435824A CN103794660A CN 103794660 A CN103794660 A CN 103794660A CN 201210435824 A CN201210435824 A CN 201210435824A CN 103794660 A CN103794660 A CN 103794660A
Authority
CN
China
Prior art keywords
solar cell
layer
forming
manufacturing
cell according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201210435824.2A
Other languages
Chinese (zh)
Inventor
高武羣
程立伟
蒋天福
刘政男
郑惠芳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Topcell Solar International Co Ltd
Original Assignee
Topcell Solar International Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Topcell Solar International Co Ltd filed Critical Topcell Solar International Co Ltd
Priority to CN201210435824.2A priority Critical patent/CN103794660A/en
Publication of CN103794660A publication Critical patent/CN103794660A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/206Electrodes for devices having potential barriers
    • H10F77/211Electrodes for devices having potential barriers for photovoltaic cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

The invention provides a solar cell and a manufacturing method thereof. The method comprises the following steps: providing a solar cell substrate; forming a patterned mask layer exposing a part of the solar cell substrate on the solar cell substrate; forming a front electrode on the part of the solar cell substrate exposed by the patterned mask layer; forming a covering layer covering the front electrode; removing the patterned mask layer; and forming a back electrode on the solar cell substrate, wherein the front electrode and the back electrode are respectively formed on two opposite surfaces of the solar cell substrate. The front electrode is formed by forming a seed layer on the exposed part of the solar cell substrate, and then forming a copper layer on the seed layer.

Description

太阳能电池及其制作方法Solar cell and manufacturing method thereof

技术领域 technical field

本发明是有关于一种光电元件及其制作方法,且特别是有关于一种太阳能电池及其制作方法。The present invention relates to a photoelectric element and its manufacturing method, and in particular to a solar cell and its manufacturing method.

背景技术 Background technique

由于石化能源短缺,人们对环保重要性的认知提高,因此人们近年来不断地积极研发替代能源与再生能源的相关技术,希望可以减少目前人类对于石化能源的依赖程度以及使用石化能源时对环境带来的影响。在众多的替代能源与再生能源的技术中,以太阳能电池最受瞩目。主要是因为太阳能电池可直接将太阳能转换成电能,且发电过程中不会产生二氧化碳或氮化物等物质,因此不会造成环境污染的问题。Due to the shortage of petrochemical energy, people's awareness of the importance of environmental protection has increased. Therefore, in recent years, people have been actively researching and developing technologies related to alternative energy and renewable energy, hoping to reduce the current human dependence on petrochemical energy and the impact on the environment when using petrochemical energy. the impact. Among the many alternative energy and renewable energy technologies, solar cells have attracted the most attention. The main reason is that solar cells can directly convert solar energy into electrical energy, and no substances such as carbon dioxide or nitrides will be produced during the power generation process, so it will not cause environmental pollution.

在一般的太阳能电池的制程中,通常是利用网版印刷(screenprinting)的方式将银胶涂布于基板上且接着进行高温固化处理来形成电极。然而,在进行网版印刷的过程中往往需要耗费大量的银胶。由于银具有较高的价格,因此上述的方法增加了太阳能电池的生产成本。此外,为了提高太阳能电池的效率,以上述方式形成的银电极必须具有较细的尺寸。然而,在高温固化处理的过程中,往往导致细的银电极断线或不连续。另外,利用网版印刷所形成的银电极通常为具有孔洞(porous)的结构,其导致了电阻的提高,因而影响太阳能电池的效率。In the general solar cell manufacturing process, silver paste is usually coated on the substrate by means of screen printing and then subjected to high-temperature curing treatment to form electrodes. However, a large amount of silver colloid is often consumed in the process of screen printing. Since silver has a high price, the above-mentioned method increases the production cost of the solar cell. In addition, in order to improve the efficiency of solar cells, the silver electrodes formed in the above manner must have finer dimensions. However, during the high temperature curing process, the thin silver electrodes tend to be disconnected or discontinuous. In addition, the silver electrode formed by screen printing usually has a porous structure, which leads to an increase in resistance, thereby affecting the efficiency of the solar cell.

发明内容 Contents of the invention

本发明提供一种太阳能电池及其制作方法。The invention provides a solar cell and a manufacturing method thereof.

本发明提供一种太阳能电池,其具有较佳的效率与较低的生产成本。The invention provides a solar cell with better efficiency and lower production cost.

本发明提供一种太阳能电池的制作方法,其可制作具有较佳的效率与较低的生产成本的太阳能电池。The invention provides a method for manufacturing a solar cell, which can manufacture a solar cell with better efficiency and lower production cost.

本发明提供一种太阳能电池,其包括太阳能电池基板、正面电极、覆盖层以及背面电极。正面电极与背面电极分别配置于太阳能电池基板的相对两个表面上。正面电极包括种子层以及铜层。种子层配置于太阳能电池基板上。铜层配置于种子层上。覆盖层包覆正面电极。The invention provides a solar cell, which includes a solar cell substrate, a front electrode, a covering layer and a back electrode. The front electrode and the back electrode are respectively arranged on two opposite surfaces of the solar cell substrate. The front electrode includes a seed layer and a copper layer. The seed layer is configured on the solar battery substrate. The copper layer is disposed on the seed layer. The covering layer covers the front electrodes.

依照本发明实施例所述的太阳能电池,上述的种子层的材料例如为金属或金属硅化物。According to the solar cell described in the embodiment of the present invention, the material of the seed layer is, for example, metal or metal silicide.

依照本发明实施例所述的太阳能电池,上述的金属例如为银、镍、钛、钯或钴。According to the solar cell described in the embodiment of the present invention, the aforementioned metal is, for example, silver, nickel, titanium, palladium or cobalt.

依照本发明实施例所述的太阳能电池,上述的金属硅化物例如为硅化镍、硅化钛或硅化钴。According to the solar cell described in the embodiment of the present invention, the metal silicide mentioned above is, for example, nickel silicide, titanium silicide or cobalt silicide.

依照本发明实施例所述的太阳能电池,上述的种子层的厚度例如介于0.05um至10um之间。According to the solar cell described in the embodiment of the present invention, the thickness of the above-mentioned seed layer is, for example, between 0.05 um and 10 um.

依照本发明实施例所述的太阳能电池,上述的铜层的厚度例如介于1um至10um之间。According to the solar cell described in the embodiment of the present invention, the thickness of the copper layer is, for example, between 1 um and 10 um.

依照本发明实施例所述的太阳能电池,上述的覆盖层的材料例如为镍、银或锡。According to the solar cell described in the embodiment of the present invention, the material of the above-mentioned covering layer is, for example, nickel, silver or tin.

依照本发明实施例所述的太阳能电池,上述的背面电极的材料例如为银、铜、镍、铝、钛或铬。According to the solar cell described in the embodiment of the present invention, the material of the above-mentioned back electrode is, for example, silver, copper, nickel, aluminum, titanium or chromium.

依照本发明实施例所述的太阳能电池,上述的背面电极的结构例如与正面电极的结构相同。According to the solar cell described in the embodiment of the present invention, the structure of the above-mentioned back electrode is, for example, the same as that of the front electrode.

本发明另提供一种太阳能电池的制作方法,此方法包括以下步骤:提供太阳能电池基板;于太阳能电池基板上形成图案化罩幕层;图案化罩幕层暴露出部分太阳能电池基板。于图案化罩幕层所暴露出的部分太阳能电池基板上形成正面电极;形成包覆正面电极的覆盖层;移除图案化罩幕层;以及于太阳能电池基板上形成背面电极,其中正面电极与背面电极分别形成于太阳能电池基板的相对两个表面上。正面电极的形成方法是先于图案化罩幕层所暴露出的部分太阳能电池基板上形成种子层。然后,于种子层上形成铜层。The present invention further provides a method for manufacturing a solar cell, which includes the following steps: providing a solar cell substrate; forming a patterned mask layer on the solar cell substrate; and exposing a part of the solar cell substrate by the patterned mask layer. Forming a front electrode on a portion of the solar cell substrate exposed by the patterned mask layer; forming a cover layer covering the front electrode; removing the patterned mask layer; and forming a back electrode on the solar cell substrate, wherein the front electrode and The back electrodes are respectively formed on two opposite surfaces of the solar cell substrate. The method for forming the front electrode is to form a seed layer on the part of the solar cell substrate exposed by the patterned mask layer. Then, a copper layer is formed on the seed layer.

依照本发明实施例所述的太阳能电池的制作方法,上述的种子层的材料例如为金属或金属硅化物。According to the manufacturing method of the solar cell described in the embodiment of the present invention, the material of the above-mentioned seed layer is, for example, metal or metal silicide.

依照本发明实施例所述的太阳能电池的制作方法,上述的金属例如为银、镍、钛、钯或钴。According to the manufacturing method of the solar cell described in the embodiment of the present invention, the aforementioned metal is, for example, silver, nickel, titanium, palladium or cobalt.

依照本发明实施例所述的太阳能电池的制作方法,上述的金属硅化物例如为硅化镍、硅化钛或硅化钴。According to the manufacturing method of the solar cell described in the embodiment of the present invention, the above-mentioned metal silicide is, for example, nickel silicide, titanium silicide or cobalt silicide.

依照本发明实施例所述的太阳能电池的制作方法,上述的种子层的厚度例如介于0.05um至10um之间。According to the manufacturing method of the solar cell described in the embodiment of the present invention, the thickness of the above-mentioned seed layer is, for example, between 0.05 um and 10 um.

依照本发明实施例所述的太阳能电池的制作方法,上述的种子层的形成方法例如为电镀、化学镀、物理气相沉积或化学气相沉积。According to the manufacturing method of the solar cell described in the embodiment of the present invention, the above-mentioned seed layer is formed by, for example, electroplating, electroless plating, physical vapor deposition or chemical vapor deposition.

依照本发明实施例所述的太阳能电池的制作方法,上述的铜层的形成方法例如为电镀、化学镀、物理气相沉积或化学气相沉积。According to the manufacturing method of the solar cell described in the embodiment of the present invention, the above copper layer is formed by, for example, electroplating, electroless plating, physical vapor deposition or chemical vapor deposition.

依照本发明实施例所述的太阳能电池的制作方法,上述的铜层的厚度例如介于1um至10um之间。According to the manufacturing method of the solar cell described in the embodiment of the present invention, the thickness of the above-mentioned copper layer is, for example, between 1 um and 10 um.

依照本发明实施例所述的太阳能电池的制作方法,上述的覆盖层的形成方法例如为电镀、化学镀、物理气相沉积或化学气相沉积。According to the manufacturing method of the solar cell described in the embodiment of the present invention, the above-mentioned covering layer is formed by, for example, electroplating, electroless plating, physical vapor deposition or chemical vapor deposition.

依照本发明实施例所述的太阳能电池的制作方法,上述的移除图案化罩幕层的步骤例如在形成覆盖层的步骤之后进行。According to the manufacturing method of the solar cell described in the embodiment of the present invention, the above step of removing the patterned mask layer is, for example, performed after the step of forming the covering layer.

依照本发明实施例所述的太阳能电池的制作方法,上述的移除图案化罩幕层的步骤在形成种子层的步骤与形成铜层的步骤之间进行。According to the solar cell manufacturing method described in the embodiment of the present invention, the above-mentioned step of removing the patterned mask layer is performed between the step of forming the seed layer and the step of forming the copper layer.

依照本发明实施例所述的太阳能电池的制作方法,上述的背面电极的形成方法例如与正面电极的形成方法相同。According to the manufacturing method of the solar cell described in the embodiment of the present invention, the method for forming the above-mentioned back electrode is, for example, the same as the method for forming the front electrode.

基于上述,本发明在形成电极之前,先利用图案化罩幕层定义出将形成电极的区域,然后再于此区域中形成电极。因此,与利用网版印刷涂布电极材料的方式相比,本发明所形成的电极可以具有更细的宽度,以增加太阳能电池的效率,且不需于形成电极后进行用以固化电极材料的高温处理。此外,本发明的电极中具有铜层,因此可以有效地降低电极的电阻以提高太阳能电池的效率,且降低太阳能电池的生产成本。Based on the above, before forming the electrodes in the present invention, the patterned mask layer is used to define the area where the electrodes will be formed, and then the electrodes are formed in this area. Therefore, compared with the method of coating the electrode material by screen printing, the electrode formed by the present invention can have a thinner width to increase the efficiency of the solar cell, and does not need to be used for curing the electrode material after forming the electrode. heat treatment. In addition, the electrode of the present invention has a copper layer, so the resistance of the electrode can be effectively reduced to improve the efficiency of the solar cell and reduce the production cost of the solar cell.

为让本发明的上述特征和优点能更明显易懂,下文特举实施例,并配合附图作详细说明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail with reference to the accompanying drawings.

附图说明Description of drawings

图1A至图1D为依照本发明第一实施例所示出的太阳能电池的制作流程剖面示意图;1A to 1D are schematic cross-sectional views of the manufacturing process of a solar cell according to a first embodiment of the present invention;

图2A至图2D为依照本发明第二实施例所示出的太阳能电池的制作流程剖面示意图。2A to 2D are cross-sectional schematic diagrams showing a manufacturing process of a solar cell according to a second embodiment of the present invention.

附图标记说明:Explanation of reference signs:

10、20:太阳能电池;10, 20: solar cells;

100、200:太阳能电池基板;100, 200: solar cell substrate;

102、202:硅基板;102, 202: silicon substrate;

102a、202a:正面;102a, 202a: front;

102b、202b:背面;102b, 202b: back;

104:射极;104: emitter;

106:抗反射层;106: anti-reflection layer;

108:图案化罩幕层;108: patterned mask layer;

110:种子层;110: seed layer;

112:铜层;112: copper layer;

114:正面电极;114: front electrode;

116、120:覆盖层;116, 120: covering layer;

118:背面电极;118: back electrode;

204:第一非晶层;204: the first amorphous layer;

206:第一透明导电氧化物层;206: a first transparent conductive oxide layer;

208:第二非晶层;208: the second amorphous layer;

210:第二透明导电氧化物层。210: second transparent conductive oxide layer.

具体实施方式 Detailed ways

图1A至图1D为依照本发明第一实施例所示出的太阳能电池的制作流程剖面示意图。首先,请参照图1A,提供太阳能电池基板100。在本实施例中,太阳能电池基板100包括硅基板102与射极104。硅基板102具有正面102a与背面102b。射极104配置于正面102a上。此外,太阳能电池基板100上还可以形成有抗反射层106,其位于射极104上。射极104以及抗反射层106的形成方法为本领域技术人员所熟知,于此不另行说明。此外,如本领域技术人员所熟知,硅基板102可具有纹理化(textured)表面(未示出)。FIG. 1A to FIG. 1D are cross-sectional schematic diagrams showing a manufacturing process of a solar cell according to a first embodiment of the present invention. First, referring to FIG. 1A , a solar cell substrate 100 is provided. In this embodiment, the solar cell substrate 100 includes a silicon substrate 102 and an emitter 104 . The silicon substrate 102 has a front side 102a and a back side 102b. The emitter 104 is disposed on the front surface 102a. In addition, an anti-reflection layer 106 may also be formed on the solar cell substrate 100 , which is located on the emitter 104 . The methods for forming the emitter 104 and the anti-reflection layer 106 are well known to those skilled in the art, and will not be further described here. Additionally, the silicon substrate 102 may have a textured surface (not shown), as is well known to those skilled in the art.

然后,请参照图1B,于太阳能电池基板100上形成图案化罩幕层108。图案化罩幕层108的形成方法例如是先形成一层罩幕材料层,然后利用蚀刻或雷射切割的方式将罩幕材料层图案化。在本实施例中,由于太阳能电池基板100上形成有抗反射层106,因此图案化罩幕层108形成于抗反射层106上。接着,以图案化罩幕层108为罩幕,移除被图案化罩幕层108暴露出的抗反射层106,以暴露出部分太阳能电池基板100(即暴露出部分射极104)。在没有形成抗反射层106的实施例中,图案化罩幕层108则直接形成于射极104上,且不会有上述移除被图案化罩幕层108暴露出的抗反射层106的步骤。Then, referring to FIG. 1B , a patterned mask layer 108 is formed on the solar cell substrate 100 . The method for forming the patterned mask layer 108 is, for example, to form a mask material layer first, and then pattern the mask material layer by etching or laser cutting. In this embodiment, since the anti-reflection layer 106 is formed on the solar cell substrate 100 , the patterned mask layer 108 is formed on the anti-reflection layer 106 . Next, using the patterned mask layer 108 as a mask, the anti-reflection layer 106 exposed by the patterned mask layer 108 is removed to expose part of the solar cell substrate 100 (ie, part of the emitter 104 is exposed). In the embodiment without forming the anti-reflection layer 106, the patterned mask layer 108 is directly formed on the emitter 104, and there is no above-mentioned step of removing the anti-reflection layer 106 exposed by the patterned mask layer 108. .

接着,请参照图1C,于图案化罩幕层108所暴露出的射极104上形成种子层110。种子层110用以作为后续形成铜层时的种子层。种子层110的材料例如为金属或金属硅化物。上述的金属例如为银、镍、钛、钯或钴,而上述的金属硅化物例如为硅化镍、硅化钛或硅化钴。种子层110的厚度例如介于0.05um至10um之间。此外,种子层110可为单层或是多层结构。在本实施例中,以单层为例。种子层110的形成方法例如为电镀、化学镀(或称为无电镀(electroless plating))、物理气相沉积或化学气相沉积。特别一提的是,当种子层110的材料为金属硅化物时,其形成方法也可以是先于图案化罩幕层108所暴露出的射极104上形成金属材料层,然后进行回火制程,使金属材料层与下方的硅材料反应而形成金属硅化物层。之后,移除图案化罩幕层108。Next, referring to FIG. 1C , a seed layer 110 is formed on the emitter 104 exposed by the patterned mask layer 108 . The seed layer 110 is used as a seed layer for subsequent formation of the copper layer. The material of the seed layer 110 is, for example, metal or metal silicide. The aforementioned metals are, for example, silver, nickel, titanium, palladium or cobalt, and the aforementioned metal silicides are, for example, nickel silicide, titanium silicide, or cobalt silicide. The thickness of the seed layer 110 is, for example, between 0.05 um and 10 um. In addition, the seed layer 110 can be a single layer or a multi-layer structure. In this embodiment, a single layer is taken as an example. The formation method of the seed layer 110 is, for example, electroplating, electroless plating (or called electroless plating), physical vapor deposition or chemical vapor deposition. In particular, when the material of the seed layer 110 is metal silicide, its formation method may also be to form a metal material layer on the emitter 104 exposed by the patterned mask layer 108, and then perform a tempering process. , making the metal material layer react with the underlying silicon material to form a metal silicide layer. Afterwards, the patterned mask layer 108 is removed.

之后,请参照图1D,于种子层110上形成铜层112。铜层112的形成方法例如为电镀、化学镀、物理气相沉积或化学气相沉积。铜层112的厚度例如介于1um至10um之间。在本实施例中,铜层112与种子层110构成太阳能电池中的正面电极114。此外,铜层112为正面电极110的主要部分,使得正面电极110可以具有较低的电阻,即具有较佳的导电率,因此可以有效地提高太阳能电池的效率。另外,由于铜具有较低的价格(与银相比),因此以铜层110为主要部分的正面电极114也降低了太阳能电池的生产成本。再者,在形成正面电极114之前,先利用图案化罩幕层定义出将形成正面电极114的区域,因此与利用网版印刷涂布电极材料的方式相比,所形成的正面电极114可以具有更细的宽度,以增加太阳能电池的效率,且不需于形成正面电极114后进行用以固化电极材料的高温处理。After that, referring to FIG. 1D , a copper layer 112 is formed on the seed layer 110 . The copper layer 112 is formed by, for example, electroplating, electroless plating, physical vapor deposition or chemical vapor deposition. The thickness of the copper layer 112 is, for example, between 1 um and 10 um. In this embodiment, the copper layer 112 and the seed layer 110 constitute the front electrode 114 in the solar cell. In addition, the copper layer 112 is the main part of the front electrode 110, so that the front electrode 110 can have lower resistance, that is, better conductivity, and thus can effectively improve the efficiency of the solar cell. In addition, since copper has a lower price (compared to silver), the front electrode 114 with the copper layer 110 as the main part also reduces the production cost of the solar cell. Furthermore, before forming the front electrode 114, the patterned mask layer is used to define the area where the front electrode 114 will be formed. Therefore, compared with the method of applying electrode materials by screen printing, the formed front electrode 114 can have The thinner width increases the efficiency of the solar cell, and does not require high temperature treatment for curing the electrode material after forming the front electrode 114 .

请继续参照图1D,形成包覆正面电极114的覆盖层116。覆盖层116的材料例如为镍、银或锡。覆盖层116的形成方法例如为电镀、化学镀、物理气相沉积或化学气相沉积。覆盖层116用以避免铜层112与外界环境接触而产生氧化。此外,在将多个太阳能电池连接以形成太阳能电池模块的过程中,覆盖层116可增加正面电极114与用以连接多个正面电极114的总线(bus bar)之间的附着力。然后,于硅基板102的背面102b上形成背面电极118,以完成太阳能电池10的制作。背面电极118可以具有本领域技术人员所熟知的背面电极结构。或者,背面电极可以与正面电极114具有相同的结构以及类似的形成方法。举例来说,可以于背面102b上依序形成图案化罩幕层、种子层以及铜层,以构成背面电极。在形成背面电极之后,形成包覆背面电极的覆盖层。Please continue to refer to FIG. 1D , forming a cover layer 116 covering the front electrode 114 . The material of the cover layer 116 is, for example, nickel, silver or tin. The forming method of the covering layer 116 is, for example, electroplating, electroless plating, physical vapor deposition or chemical vapor deposition. The covering layer 116 is used to prevent the copper layer 112 from being oxidized due to contact with the external environment. In addition, during the process of connecting a plurality of solar cells to form a solar cell module, the covering layer 116 can increase the adhesion between the front electrode 114 and the bus bar used to connect the plurality of front electrodes 114 . Then, a back electrode 118 is formed on the back surface 102 b of the silicon substrate 102 to complete the fabrication of the solar cell 10 . The back electrode 118 may have a back electrode structure well known to those skilled in the art. Alternatively, the back electrode may have the same structure and a similar formation method as the front electrode 114 . For example, a patterned mask layer, a seed layer and a copper layer may be sequentially formed on the back surface 102b to form the back electrode. After forming the back electrode, a cover layer covering the back electrode is formed.

特别一提的是,在本实施例中,移除图案化罩幕层108的步骤在形成种子层110的步骤与形成铜层112的步骤之间进行。然而,本发明并不限于此。在其他实施例中,也可以在形成覆盖层116之后移除图案化罩幕层108。In particular, in this embodiment, the step of removing the patterned mask layer 108 is performed between the step of forming the seed layer 110 and the step of forming the copper layer 112 . However, the present invention is not limited thereto. In other embodiments, the patterned mask layer 108 may also be removed after the covering layer 116 is formed.

此外,在本实施中,先形成正面电极114,再形成背面电极118。然而,本发明并不限于此。按实际需求,也可以先形成背面电极118,再形成正面电极114。In addition, in this embodiment, the front electrode 114 is formed first, and then the back electrode 118 is formed. However, the present invention is not limited thereto. According to actual needs, the back electrode 118 can also be formed first, and then the front electrode 114 can be formed.

图2A至图2D为依照本发明第二实施例所示出的太阳能电池的制作流程剖面示意图。在本实施例中,与第一实施例相同的元件将以相同的标号表示。首先,请参照图2A,提供太阳能电池基板200。在本实施例中,太阳能电池基板200包括硅基板202、第一非晶层(amorphous layer)204、第一透明导电氧化物层206、第二非晶层208以及第二透明导电氧化物层210。硅基板202具有正面202a与背面202b。第一非晶层204配置于正面202a上。第一透明导电氧化物层206配置于第一非晶层204上。第二非晶层208配置于背面202b上。第二透明导电氧化物层210配置于第二非晶层208上。第一非晶层204、第一透明导电氧化物层206、第二非晶层208以及第二透明导电氧化物层210的形成方法为本领域技术人员所熟知,于此不另行说明。此外,如本领域技术人员所熟知,硅基板202可具有纹理化表面(未示出)。2A to 2D are cross-sectional schematic diagrams showing a manufacturing process of a solar cell according to a second embodiment of the present invention. In this embodiment, the same elements as those of the first embodiment will be denoted by the same reference numerals. First, referring to FIG. 2A , a solar cell substrate 200 is provided. In this embodiment, the solar cell substrate 200 includes a silicon substrate 202, a first amorphous layer (amorphous layer) 204, a first transparent conductive oxide layer 206, a second amorphous layer 208 and a second transparent conductive oxide layer 210 . The silicon substrate 202 has a front side 202a and a back side 202b. The first amorphous layer 204 is disposed on the front surface 202a. The first transparent conductive oxide layer 206 is disposed on the first amorphous layer 204 . The second amorphous layer 208 is disposed on the back surface 202b. The second transparent conductive oxide layer 210 is disposed on the second amorphous layer 208 . The methods for forming the first amorphous layer 204 , the first transparent conductive oxide layer 206 , the second amorphous layer 208 and the second transparent conductive oxide layer 210 are well known to those skilled in the art and will not be further described herein. Additionally, silicon substrate 202 may have a textured surface (not shown), as is well known to those skilled in the art.

然后,请参照图2B,分别于第一透明导电氧化物层206与第二透明导电氧化物层210上形成图案化罩幕层108。Then, referring to FIG. 2B , a patterned mask layer 108 is formed on the first transparent conductive oxide layer 206 and the second transparent conductive oxide layer 210 respectively.

接着,请参照图2C,于图案化罩幕层108所暴露出的第一透明导电氧化物层206与第二透明导电氧化物层210上形成种子层110。种子层110用以作为后续形成铜层时的种子层。此外,种子层110可为单层或是多层结构。在本实施例中,以单层为例。Next, referring to FIG. 2C , a seed layer 110 is formed on the first transparent conductive oxide layer 206 and the second transparent conductive oxide layer 210 exposed by the patterned mask layer 108 . The seed layer 110 is used as a seed layer for subsequent formation of the copper layer. In addition, the seed layer 110 can be a single layer or a multi-layer structure. In this embodiment, a single layer is taken as an example.

之后,请参照图2D,于种子层110上形成铜层112。在本实施例中,邻近正面202a的铜层112与种子层110构成太阳能电池中的正面电极114,而邻近背面202b的铜层112与种子层110则构成太阳能电池中的背面电极118。由于铜层112为正面电极110与背面电极118的主要部分,使得正面电极110与背面电极118可以具有较低的电阻,即具有较佳的导电率,因此可以有效地提高太阳能电池的效率。另外,由于铜具有较低的价格(与银相比),因此以铜层110为主要部分的正面电极114与背面电极118也降低了太阳能电池的生产成本。再者,在形成正面电极114与背面电极118之前,先利用图案化罩幕层定义出将形成正面电极114与背面电极118的区域,因此与利用网版印刷涂布电极材料的方式相比,所形成的正面电极114与背面电极118可以具有更细的宽度,以增加太阳能电池的效率,且不需于形成正面电极114与背面电极118后进行用以固化电极材料的高温处理。After that, referring to FIG. 2D , a copper layer 112 is formed on the seed layer 110 . In this embodiment, the copper layer 112 and the seed layer 110 adjacent to the front surface 202a form the front electrode 114 in the solar cell, and the copper layer 112 and the seed layer 110 adjacent to the back surface 202b form the back electrode 118 in the solar cell. Since the copper layer 112 is the main part of the front electrode 110 and the back electrode 118 , the front electrode 110 and the back electrode 118 can have lower resistance, that is, have better conductivity, thus effectively improving the efficiency of the solar cell. In addition, since copper has a lower price (compared with silver), the front electrode 114 and the back electrode 118 with the copper layer 110 as the main part also reduce the production cost of the solar cell. Moreover, before forming the front electrode 114 and the back electrode 118, the area where the front electrode 114 and the back electrode 118 will be formed is defined by a patterned mask layer, so compared with the method of coating electrode materials by screen printing, The formed front electrode 114 and back electrode 118 can have a thinner width to increase the efficiency of the solar cell, and no high temperature treatment for curing the electrode material is required after the formation of the front electrode 114 and the back electrode 118 .

请继续参照图2D,形成包覆正面电极114的覆盖层116以及包覆背面电极118的覆盖层120,以完成太阳能电池20的制作。覆盖层120的材料、形成方法以及功用与覆盖层116相同,于此不另行说明。Please continue to refer to FIG. 2D , forming the covering layer 116 covering the front electrode 114 and the covering layer 120 covering the back electrode 118 to complete the fabrication of the solar cell 20 . The material, formation method and function of the covering layer 120 are the same as those of the covering layer 116 , and will not be further described here.

在本实施例中,背面电极118与正面电极114具有相同的结构与形成方法,且二者在相同的制程步骤中形成。然而,本发明并不限于此。在其他实施例中,背面电极118也可以具有本领域技术人员所熟知的背面电极结构。此外,按实际需求,也可以先形成正面电极114,再形成背面电极118;或先形成背面电极118,再形成正面电极114。In this embodiment, the back electrode 118 and the front electrode 114 have the same structure and formation method, and both are formed in the same process steps. However, the present invention is not limited thereto. In other embodiments, the back electrode 118 may also have a back electrode structure known to those skilled in the art. In addition, according to actual needs, the front electrode 114 can also be formed first, and then the back electrode 118 ; or the back electrode 118 can be formed first, and then the front electrode 114 can be formed.

最后应说明的是:以上各实施例仅用以说明本发明的技术方案,而非对其限制;尽管参照前述各实施例对本发明进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分或者全部技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实施例技术方案的范围。Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention, rather than limiting them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: It is still possible to modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the technical solutions of the various embodiments of the present invention. scope.

Claims (21)

1.一种太阳能电池,其特征在于,包括:1. A solar cell, characterized in that, comprising: 太阳能电池基板;Solar cell substrate; 正面电极,配置于所述太阳能电池基板上,所述正面电极包括:The front electrode is configured on the solar cell substrate, and the front electrode includes: 种子层,配置于所述太阳能电池基板上;以及a seed layer configured on the solar cell substrate; and 铜层,配置于所述种子层上;a copper layer configured on the seed layer; 覆盖层,包覆所述正面电极;以及a cover layer covering the front electrode; and 背面电极,配置于所述太阳能电池基板上,其中所述正面电极与所述背面电极分别配置于所述太阳能电池基板的相对两个表面上。The back electrode is arranged on the solar cell substrate, wherein the front electrode and the back electrode are respectively arranged on two opposite surfaces of the solar cell substrate. 2.根据权利要求1所述的太阳能电池,其特征在于,所述种子层的材料包括金属或金属硅化物。2. The solar cell according to claim 1, wherein the material of the seed layer comprises metal or metal silicide. 3.根据权利要求2所述的太阳能电池,其特征在于,所述金属包括银、镍、钛、钯或钴。3. The solar cell of claim 2, wherein the metal comprises silver, nickel, titanium, palladium or cobalt. 4.根据权利要求2所述的太阳能电池,其特征在于,所述金属硅化物包括硅化镍、硅化钛或硅化钴。4. The solar cell according to claim 2, wherein the metal silicide comprises nickel silicide, titanium silicide or cobalt silicide. 5.根据权利要求1所述的太阳能电池,其特征在于,所述种子层的厚度介于0.05um至10um之间。5 . The solar cell according to claim 1 , wherein the thickness of the seed layer is between 0.05 um and 10 um. 6.根据权利要求1所述的太阳能电池,其特征在于,所述铜层的厚度介于1um至10um之间。6 . The solar cell according to claim 1 , wherein the thickness of the copper layer is between 1 um and 10 um. 7.根据权利要求1所述的太阳能电池,其特征在于,所述覆盖层的材料包括镍、银或锡。7. The solar cell according to claim 1, wherein the material of the covering layer comprises nickel, silver or tin. 8.根据权利要求1所述的太阳能电池,其特征在于,所述背面电极的材料包括银、铜、镍、铝、钛或铬。8. The solar cell according to claim 1, wherein the material of the back electrode comprises silver, copper, nickel, aluminum, titanium or chromium. 9.根据权利要求1所述的太阳能电池,其特征在于,所述背面电极的结构与所述正面电极的结构相同。9. The solar cell according to claim 1, wherein the structure of the back electrode is the same as that of the front electrode. 10.一种太阳能电池的制作方法,其特征在于,包括:10. A method for manufacturing a solar cell, comprising: 提供太阳能电池基板;Provide solar cell substrates; 于所述太阳能电池基板上形成图案化罩幕层,所述图案化罩幕层暴露出部分所述太阳能电池基板;forming a patterned mask layer on the solar cell substrate, the patterned mask layer exposing part of the solar cell substrate; 于所述图案化罩幕层暴露出的部分所述太阳能电池基板上形成正面电极,所述正面电极的形成方法包括:Forming a front electrode on the part of the solar cell substrate exposed by the patterned mask layer, the method for forming the front electrode includes: 于所述图案化罩幕层所暴露出的部分所述太阳能电池基板上形成种子层;以及forming a seed layer on the portion of the solar cell substrate exposed by the patterned mask layer; and 于所述种子层上形成铜层;forming a copper layer on the seed layer; 形成包覆所述正面电极的覆盖层;forming a cover layer covering the front electrode; 移除所述图案化罩幕层;以及removing the patterned mask layer; and 于所述太阳能电池基板上形成背面电极,其中所述正面电极与所述背面电极分别形成于所述太阳能电池基板的相对两个表面上。A back electrode is formed on the solar cell substrate, wherein the front electrode and the back electrode are respectively formed on two opposite surfaces of the solar cell substrate. 11.根据权利要求10所述的太阳能电池的制作方法,其特征在于,所述种子层的材料包括金属或金属硅化物。11. The method for manufacturing a solar cell according to claim 10, wherein the material of the seed layer comprises metal or metal silicide. 12.根据权利要求11所述的太阳能电池的制作方法,其特征在于,所述金属包括银、镍、钯、钛或钴。12. The method for manufacturing a solar cell according to claim 11, wherein the metal comprises silver, nickel, palladium, titanium or cobalt. 13.根据权利要求11所述的太阳能电池的制作方法,其特征在于,所述金属硅化物包括硅化镍、硅化钛或硅化钴。13. The method for manufacturing a solar cell according to claim 11, wherein the metal silicide comprises nickel silicide, titanium silicide or cobalt silicide. 14.根据权利要求10所述的太阳能电池的制作方法,其特征在于,所述种子层的厚度介于0.05um至10um之间。14 . The method for manufacturing a solar cell according to claim 10 , wherein the thickness of the seed layer is between 0.05 um and 10 um. 15.根据权利要求10所述的太阳能电池的制作方法,其特征在于,所述种子层的形成方法包括电镀、化学镀、物理气相沉积或化学气相沉积。15. The method for manufacturing a solar cell according to claim 10, wherein the method for forming the seed layer comprises electroplating, electroless plating, physical vapor deposition or chemical vapor deposition. 16.根据权利要求10所述的太阳能电池的制作方法,其特征在于,所述铜层的形成方法包括电镀、化学镀、物理气相沉积或化学气相沉积。16 . The method for manufacturing a solar cell according to claim 10 , wherein the method for forming the copper layer comprises electroplating, electroless plating, physical vapor deposition or chemical vapor deposition. 17.根据权利要求10所述的太阳能电池的制作方法,其特征在于,所述铜层的厚度介于1um至10um之间。17 . The method for manufacturing a solar cell according to claim 10 , wherein the thickness of the copper layer is between 1 um and 10 um. 18.根据权利要求10所述的太阳能电池的制作方法,其特征在于,所述覆盖层的形成方法包括电镀、化学镀、物理气相沉积或化学气相沉积。18 . The method for manufacturing a solar cell according to claim 10 , wherein the method for forming the covering layer includes electroplating, electroless plating, physical vapor deposition or chemical vapor deposition. 19.根据权利要求10所述的太阳能电池的制作方法,其特征在于,移除所述图案化罩幕层的步骤在形成所述覆盖层的步骤之后进行。19. The method of manufacturing a solar cell according to claim 10, wherein the step of removing the patterned mask layer is performed after the step of forming the covering layer. 20.根据权利要求10所述的太阳能电池的制作方法,其特征在于,移除所述图案化罩幕层的步骤在形成所述种子层的步骤与形成所述铜层的步骤之间进行。20 . The method of manufacturing a solar cell according to claim 10 , wherein the step of removing the patterned mask layer is performed between the step of forming the seed layer and the step of forming the copper layer. 21 . 21.根据权利要求10所述的太阳能电池的制作方法,其特征在于,所述背面电极的形成方法与所述正面电极的形成方法相同。21 . The method for fabricating a solar cell according to claim 10 , wherein the method for forming the back electrode is the same as the method for forming the front electrode.
CN201210435824.2A 2012-11-05 2012-11-05 Solar cell and manufacturing method thereof Pending CN103794660A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210435824.2A CN103794660A (en) 2012-11-05 2012-11-05 Solar cell and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210435824.2A CN103794660A (en) 2012-11-05 2012-11-05 Solar cell and manufacturing method thereof

Publications (1)

Publication Number Publication Date
CN103794660A true CN103794660A (en) 2014-05-14

Family

ID=50670151

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210435824.2A Pending CN103794660A (en) 2012-11-05 2012-11-05 Solar cell and manufacturing method thereof

Country Status (1)

Country Link
CN (1) CN103794660A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105895713A (en) * 2016-06-17 2016-08-24 新奥光伏能源有限公司 Silicon heterojunction solar cell and fabrication method thereof
CN108123010A (en) * 2016-11-29 2018-06-05 茂迪股份有限公司 Solar cell and method for manufacturing same
TWI637431B (en) * 2015-11-16 2018-10-01 艾格生科技股份有限公司 Backside metallization process
CN112133769A (en) * 2019-06-24 2020-12-25 泰州隆基乐叶光伏科技有限公司 Solar cell and method for manufacturing same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090239331A1 (en) * 2008-03-24 2009-09-24 Palo Alto Research Center Incorporated Methods for forming multiple-layer electrode structures for silicon photovoltaic cells
CN101568670A (en) * 2006-12-01 2009-10-28 应用材料股份有限公司 Apparatus and method for electroplating on a solar cell substrate
US20090311825A1 (en) * 2008-06-13 2009-12-17 Andreas Krause Metallization method for solar cells
US20110272009A1 (en) * 2010-05-07 2011-11-10 International Business Machines Corporation Method and structure of photovoltaic grid stacks by solution based processes
CN102403371A (en) * 2010-09-10 2012-04-04 赛昂电力有限公司 Solar cell with electroplated metal grid

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101568670A (en) * 2006-12-01 2009-10-28 应用材料股份有限公司 Apparatus and method for electroplating on a solar cell substrate
US20090239331A1 (en) * 2008-03-24 2009-09-24 Palo Alto Research Center Incorporated Methods for forming multiple-layer electrode structures for silicon photovoltaic cells
EP2105969A2 (en) * 2008-03-24 2009-09-30 Palo Alto Research Center Incorporated Methods for forming multiple-layer electrode structures for silicon photovoltaic cells
US20090311825A1 (en) * 2008-06-13 2009-12-17 Andreas Krause Metallization method for solar cells
US20110272009A1 (en) * 2010-05-07 2011-11-10 International Business Machines Corporation Method and structure of photovoltaic grid stacks by solution based processes
CN102403371A (en) * 2010-09-10 2012-04-04 赛昂电力有限公司 Solar cell with electroplated metal grid

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI637431B (en) * 2015-11-16 2018-10-01 艾格生科技股份有限公司 Backside metallization process
CN105895713A (en) * 2016-06-17 2016-08-24 新奥光伏能源有限公司 Silicon heterojunction solar cell and fabrication method thereof
CN105895713B (en) * 2016-06-17 2018-03-30 新奥光伏能源有限公司 A kind of silicon heterogenous solar cell and preparation method thereof
CN108123010A (en) * 2016-11-29 2018-06-05 茂迪股份有限公司 Solar cell and method for manufacturing same
CN112133769A (en) * 2019-06-24 2020-12-25 泰州隆基乐叶光伏科技有限公司 Solar cell and method for manufacturing same

Similar Documents

Publication Publication Date Title
CN114447152B (en) Heterojunction solar cell and method for preparing the same
US10249775B2 (en) Solar cell and method for producing solar cell
US20200091362A1 (en) Solar cell module and method for producing same
CN101901853A (en) Integrated thin film solar cell and manufacturing method thereof
CN106463561B (en) Crystalline silicon-based solar cell, crystalline silicon-based solar cell module, and methods for producing the same
KR20110129469A (en) Back electrode type solar cell, wiring sheet, solar cell with wiring sheet, solar module, manufacturing method of solar cell with wiring sheet, and manufacturing method of solar cell module
US9916936B2 (en) Method for forming conductive electrode patterns and method for manufacturing solar cells comprising the same
CN103078000A (en) Flexible solar cell module and manufacturing method thereof
CN114927622A (en) Perovskite battery and internal series connection method and internal series connection structure thereof
CN102779905B (en) Preparation method of solar cell electrode
CN103794660A (en) Solar cell and manufacturing method thereof
CN103081123A (en) Device for generating solar power and method for manufacturing same
US8852990B2 (en) Method of fabricating solar cell
JP2007149633A (en) Method of manufacturing translucent conductive film substrate
CN104157742A (en) Solar cell and manufacturing method thereof
CN102769060B (en) A kind of novel solar cell interconnect architecture and manufacture method thereof
CN101958352A (en) Solar cell and manufacturing method thereof
JP2019216239A (en) Manufacturing method of photovoltaic module and photovoltaic module obtained thereby
CN103201854A (en) Device for generating photovoltaic power and method for manufacturing same
CN102468369B (en) Method for forming metal electrode on surface of solar cell
CN113488549A (en) Preparation method of heterojunction solar cell
CN104011876B (en) Solar battery apparatus and manufacture method thereof
CN104350612B (en) Solar cell and method for manufacturing same
CN116169209A (en) Preparation method of high-reliability heterojunction solar cell and solar cell
CN103794659A (en) Solar cell and manufacturing method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20140514