CN1078388C - Surface mounting type light emitting diode - Google Patents
Surface mounting type light emitting diode Download PDFInfo
- Publication number
- CN1078388C CN1078388C CN96102727A CN96102727A CN1078388C CN 1078388 C CN1078388 C CN 1078388C CN 96102727 A CN96102727 A CN 96102727A CN 96102727 A CN96102727 A CN 96102727A CN 1078388 C CN1078388 C CN 1078388C
- Authority
- CN
- China
- Prior art keywords
- substrate
- emitting diode
- sides
- terminal
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 230000007704 transition Effects 0.000 claims description 7
- 238000009434 installation Methods 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- 230000032798 delamination Effects 0.000 abstract description 3
- 206010040844 Skin exfoliation Diseases 0.000 description 18
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Wire Bonding (AREA)
Abstract
一种发光二极管(1),在与基板(2)接合的铸型部分(6)的边中,平行于安设各端子部分(3a)的基板边的两个边在至少0.1mm的长度上与基板(2)直接接合,其余部分与导电型板接合;而垂直于安设各端子部分(3a)的基板边的另外两个边则全部与基板(2)接合。因此改善了装置的机械和热阻力,减少了基板(2)和铸型部分(6)之间的剥离,消除了侵入水分和异物的可能性,于是提高了发光二极管的工作可靠性。
A light-emitting diode (1), of which, among the sides of a molded part (6) joined to a substrate (2), two sides parallel to the side of the substrate on which each terminal part (3a) is mounted have a length of at least 0.1 mm It is directly bonded to the substrate (2), and the rest is bonded to the conductive plate; while the other two sides perpendicular to the substrate edge where each terminal portion (3a) is installed are all bonded to the substrate (2). The mechanical and thermal resistance of the device is thus improved, the delamination between the substrate (2) and the molded part (6) is reduced, the possibility of intrusion of moisture and foreign objects is eliminated, and thus the operational reliability of the LEDs is increased.
Description
本发明涉及发光二极管的构形,更确切地说,本发明涉及在不需要在印刷线路板上制成配合孔的情况下,就可安装在印刷线路板表面上的表面安装型发光二极管。This invention relates to the configuration of light emitting diodes, and more particularly, the present invention relates to surface mount light emitting diodes which can be mounted on the surface of a printed circuit board without the need to form mating holes in the printed circuit board.
图5和图6表示所考虑类型中已知的表面安装型发光二极管90的结构,其构成是在基板91上形成导电型板92,基板是91是典型的玻璃环氧树脂印刷线路板,导电型板92包括分别安设在基板91两对边上的一对端子部分92a,一个端子部分92a连接一小块92b,另一端子部分92a连接接线部分92c。Fig. 5 and Fig. 6 represent the structure of the known surface-mounted light-emitting diode 90 in the considered type, and its composition is to form the
所述的导电型板92通常是镀金的,发光二极管(LED)芯片93安设在所述安装部分92b。通过金导线94将芯片和接线部分92c连接以后,构成透明环氧树脂的大致呈直角的平行六面体铸型部分95,以便覆盖所述的发光二极管芯片93和所述的金导线94,并制成一个完整的表面安装型发光二极管90。The
当在工业基础上实际生产这种装置时,一次供应许多如图示的相互连接的基板91,将各LED芯片93分别装配在基板上,并分别用金导线94连线。此后,以连续隆脊的方式预制各铸型部分95,然后借助切割器80进行切割,从而制造出单个的装置。When actually producing such a device on an industrial basis, many
然而,如上述方法制备的传统表面安装型发光二极管90存在以下问题,即和所述基板91与所述铸型部分95相互之间不产生局部剥离相比较,经常更多地使水分和异物侵入内部,其结果损害了表面安装型发光二极管90的使用寿命。However, the conventional surface mount type light emitting diode 90 prepared as described above has a problem that moisture and foreign substances are often more intruded than when the
通过观察剥离的后果发现,镀金的铜箔端子部分92a没有良好地附着环氧树脂铸型部分95,当装置接通而发射热时,由于导电型板92和铸型部分95的材料热膨胀系数不同,所以二者以不同的速率膨胀,从而产生应力,该应力造成剥离。By observing the consequences of peeling, it is found that the gold-plated copper
此外,如果包括许多装置的整体是这样构成时,在用上述切割器将整体切割成单个装置时,装置的导电型板92将外露出。每个导电型板92和相应的铸型部分95会由于切割作业产生的应力而剥离。换句话说,这种表面安装型发光二极管在制造时带有一些剥离区域。这些是这种类型的表面安装型发光二极管应考虑需要解决的问题。Furthermore, if the whole comprising many devices is thus constituted, when the whole is cut into individual devices with the above-mentioned cutter, the
根据发明,通过以下方式解决上述问题,即提供一种表面安装型发光二极管,其构成是在基板上安装LED芯片,基板具有分别安排在导电型板两对置边的一对端子部分以及安排在中央的安装部分和接线部分,安装和接线部分分别和所述的各端子部分保持接触,用导线接线所述LED芯片,然后用基本垂直的平行六面体铸型部分覆盖所述芯片和所述导线,其特征是:在与所述基板接合的所述铸型部分的边中,平行于安排所述各端子部分的基板边的两个边在至少为0.1mm的长度上与所述基板直接接合,其余部分与所述导电型板接合,而相对垂直于安排所述各端子部分的基板边的其他两个边全部与基板直接接合。According to the invention, the above-mentioned problems are solved by providing a surface mount type light emitting diode, which is constituted by mounting an LED chip on a substrate having a pair of terminal portions respectively arranged on two opposite sides of a conductive type plate and arranged on The central mounting part and wiring part, the mounting and wiring parts are respectively kept in contact with the respective terminal parts, the LED chip is connected with a wire, and then the chip and the wire are covered with a substantially vertical parallelepiped molded part, It is characterized in that, among the sides of the mold part joined to the substrate, two sides parallel to the side of the substrate on which the respective terminal parts are arranged are directly bonded to the substrate over a length of at least 0.1 mm, The remaining part is bonded to the conductive plate, and the other two sides relatively perpendicular to the side of the substrate where the terminal parts are arranged are all directly bonded to the substrate.
图1:本发明表面安装型发光二极管实施例的透视图;Fig. 1: the perspective view of the embodiment of surface mount type LED of the present invention;
图2:简要表示上述实施例中导电型板的形式;Fig. 2: briefly represent the form of conductive plate in the above-mentioned embodiment;
图3:表明上述实施例的试样和传统装置试样进行热试验的比较结果;Fig. 3: show that the sample of above-mentioned embodiment and conventional device sample carry out the comparative result of heat test;
图4:简要表示本发明表面安装型发光二极管的另一实施例中导电型板的形成;Fig. 4: schematically shows the formation of the conductive plate in another embodiment of the surface mount type light-emitting diode of the present invention;
图5:与本发明相比较的传统装置透视图;Fig. 5: perspective view of conventional device compared with the present invention;
图6:简要表示上述传统装置中导电型板的形成;Fig. 6: briefly represent the formation of the conductive type plate in the above-mentioned conventional device;
图7:说明这种表面安装型发光二极管制造步骤的局部透视图。Fig. 7: A partial perspective view illustrating the manufacturing steps of this surface mount type light emitting diode.
附图中参考号1代表表面安装型发光二极管;2:基板,3:导电型板,3a:端子部分,3b:安装部分,3c:接线部分,3d:过渡线部分,4:LED芯片,5:金导线,6:铸型部分,6a:平行边,6b:垂直边Reference number 1 in the accompanying drawings represents a surface-mounted light-emitting diode; 2: substrate, 3: conductive plate, 3a: terminal part, 3b: installation part, 3c: wiring part, 3d: transition line part, 4: LED chip, 5 : gold wire, 6: mold part, 6a: parallel side, 6b: vertical side
现在参照表示本发明实施例的附图详尽介绍本发明。首先看图1和图2,图中是本发明安装型发光二极管,由参考号1表示(下面简称发光二极管),该发光二极管构造是在基板2上带有导电型板3并安装LED芯片,导电型板3包括端子部分3a,安装部分3b和接线部分3c,利用金导线5将他们进行适当地连接,然后如同相比较的传统装置一样构成铸型部分6。The present invention will now be described in detail with reference to the accompanying drawings showing embodiments of the invention. First look at Fig. 1 and Fig. 2, among the figure is the installation type light-emitting diode of the present invention, represented by reference number 1 (hereinafter referred to as light-emitting diode), this light-emitting diode structure is to have
也和相比较的传统装置相同,当以工业基础实际制造这种装置时,每次供应许多相互连接的基板2,各LED芯片4分别装配在基板上,并利用各条金导线5进行连线。此后以连续隆脊的形式预制各个铸型部分6,并借助于切割器进行切割,以便制造单个的装置(参见表示传统发光二极管的图7)。Also like the conventional device for comparison, when such a device is actually manufactured on an industrial basis, many
这样,在利用切割器制造具有选定外形结构的单个发光二极管1时,每个基板上带有基本上呈直角的平行六面体的铸型部分6,铸型部分6有一对相对置安排的边,其长度大致和所述基板2的宽度相等,铸型部分6的另一对相对置安排的边具有选定的和预定的长度。In this way, when using a cutter to manufacture a single light-emitting diode 1 with a selected external structure, each substrate is provided with a substantially right-angled parallelepiped molded
对于本发明来说,应注意到以下事实,即铸型部分6和基板2的剥离大多数发生在安排导电型板3的部位上,为防止这样的剥离发生,尽量给与导电型板合适的形状,而给与导电型板合适形状的关键应集中在和基板2相接合的铸型部分6的边上。For the present invention, should notice following fact, promptly the stripping majority of
按照本发明,铸型部分6的两边6a(下面称作平行边6a)连续平行于分别设置端子部分3a的两基板边,该两平行边6a的两端部E处至少有0.1mm直接接合基板2,而所述平行边6a的其余中央部分连接导电型板3。According to the present invention, the two
更具体地说,所述端子部分3a的两侧面变窄。通过这种方法,基板2两侧面因此显露至少0.1mm,于是安装部分3b和接线部分3c都由于宽度减小而使各自的末端延长。这样,在安装部分3b装配LED芯片4以后,设置铸型部分6时,铸型部分6的平行边6a的侧端部E就直接与基板2接合。More specifically, both sides of the
另一方面,铸型部分6的其余两边6b(下面称作垂直边6b)相对垂直于设置端子部分3a的两基板边,该两垂直边6b全部与基板直接连接。换句话说,导电型板3在垂直边6b上没有露出来。On the other hand, the remaining two
支持上述设计的基础是寻找到由一系列实验结果所获得的数据,这些实验将在下面介绍,实验结果表明,直接与基板2接合的铸型部分6的平行边6a和垂直边6b越长,则剥离的阻力越大,当平行边6a和垂直边6b的角部直接与基板2接合时,剥离的阻力显著增加。The basis for supporting the above design is to find data obtained by a series of experimental results, which will be introduced below. The experimental results show that the longer the
实验中,相对于具有上述构形的本发明发光二极管1中的铸型部分垂直边6b施加垂直力,用以观察基板2和铸型部分之间装置的抗剥离强度。实验证实,施加1.5公斤左右的力,比传统装置(图5和图6)的抗剥离强度提高50%。换句话说,本发明的发光二极管可有效地避免出现在切割作业时产生的剥离现象。In the experiment, a vertical force was applied with respect to the
图3显示一个线图,它说明在热循环试验中,本发明的发光二极管1和相比较的传统装置(图5和图6)的发光二极管的性能,线图中参考号T标示的曲线是本发明发光二极管的剥离频率曲线,而线图中参考号C标示的是传统装置的剥离频率曲线。Fig. 3 shows a line graph, and it illustrates in thermal cycling test, the performance of the light-emitting diode of the light-emitting diode 1 of the present invention and the comparative conventional device (Fig. The stripping frequency curve of the light-emitting diode of the present invention, and the reference sign C in the diagram is the stripping frequency curve of the conventional device.
试验采用多个试样装置,一个循环包括预热(150℃,2分钟)和正常加热(240℃,5秒),它代表热条件,在这样的热条件下,将发光二极管1固定到电路基板上重复5次,每个循环都要观察产生剥离的数量。The test uses multiple sample devices, a cycle including preheating (150°C, 2 minutes) and normal heating (240°C, 5 seconds), which represents the thermal conditions under which the LED 1 is fixed to the circuit Repeat 5 times on the substrate, and observe the amount of peeling in each cycle.
对照剥离频率曲线C的传统装置试样,在第一个循环中,有10%稍多一点的试样产生剥离,但在第2,3,4,和5循环中,试样剥离百分数分别等于60%,82%,90%和95%,由此说明在第5循环中接近全部试样都发生剥离。Compared with the conventional device samples of the peeling frequency curve C, in the first cycle, a little more than 10% of the samples were peeled off, but in the 2nd, 3rd, 4th, and 5th cycles, the peeling percentages of the samples were equal to 60%, 82%, 90% and 95%, thus indicating that nearly all of the samples were peeled off in the fifth cycle.
与上述情况相反,发明的装置试样在第3循环以前实际上不产生剥离,只在第4循环中仅有11%产生剥离,第5循环中剥离百分数很小为25%。这样,当将发光二极管固定到电路基板上时,本发明与传统装置比较,防止产生剥离的效果是很显著的。Contrary to the above, the inventive device samples practically did not delaminate before the 3rd cycle, only 11% delaminated in the 4th cycle, and the delamination percentage was as small as 25% in the 5th cycle. In this way, when the light-emitting diode is fixed on the circuit substrate, compared with the conventional device, the present invention has a remarkable effect of preventing peeling.
上述试验特别值得注意的是第三循环以前根本不产生剥离,这一事实说明剥离频率惊奇地减少。当把包括发光二极管1的许多电路元件固定到电路基板上时,本发明发光二极管部件的抗剥离性能,从电路基板可承受多个热循环的观点来看是非常重要的。Of particular note in the above tests is the fact that no debonding occurred at all until the third cycle, a fact that suggests a surprising reduction in debonding frequency. When many circuit components including the LED 1 are fixed to the circuit substrate, the peeling resistance of the LED component of the present invention is very important from the viewpoint that the circuit substrate can withstand multiple thermal cycles.
因此,如果通过选择合适的工序固定本发明发光二极管1,制作本发明发光二极管使其承受3个或更少的热循环,则基板2和铸型部分6之间将不曾产生剥离,于是减少LED芯片的偶然事故,例如通过剥离区侵入水分和异物的现象可完全消除。Therefore, if the light-emitting diode 1 of the present invention is fixed by selecting a suitable process, and the light-emitting diode of the present invention is made to withstand 3 or less thermal cycles, there will be no peeling between the
图4表示本发明的另一实施例,该实施例中,安装部分3b和接线部分3c直接连接各端子部分3a的时候,一个端子部分3a和安装部分3b以及另一端子部分3a和接线部分3c分别通过窄小的过渡线部分3d进行连接,该过渡线部分被所述铸型部分6的平行边6a交叉。在这个实施例中,如同前一个实施例一样,垂直边6b不与导电型板相交叉。Fig. 4 shows another embodiment of the present invention, and in this embodiment, when mounting
采用上述第二实施例的结构,本发明人进一步证实实验的结论,即加长平行边6a和基板2直接连接的部分,从而更加减小剥离的危险。如果曾发生过这种剥离,因为该剥离仅只沿着窄小的过渡线部分3a上产生,所以进入铸型部分内部的水分和异物的危险减小,对LED芯片的损害也小。By adopting the structure of the above-mentioned second embodiment, the inventor further confirmed the conclusion of the experiment, that is, the part directly connected to the
如上所述,在与本发明表面安装型发光二极管的基板相接合的铸型部分的边中,平行于安设各端子部分的基板边的两个边在至少为0.1mm的长度上与基板直接接合,其余部分与导电型板接合,而相对垂直于安设各端子部分的基板边的另外两个边,则全部与基板直接接合。采用这种结构,发光二极管的机械的和热的阻力较好,减小基板和铸型部分之间的剥离,消除了通过表面安装型发光二极管装置剥离部分使水分和异物侵入的可能性,从而提高装置的可靠性。As mentioned above, among the sides of the mold part joined to the substrate of the surface mount type light emitting diode of the present invention, the two sides parallel to the side of the substrate on which each terminal part is installed are directly connected to the substrate over a length of at least 0.1 mm. The remaining part is bonded to the conductive plate, and the other two sides perpendicular to the side of the substrate on which each terminal part is installed are all directly bonded to the substrate. With this structure, the mechanical and thermal resistance of the light-emitting diode is better, the peeling between the substrate and the mold part is reduced, and the possibility of intrusion of moisture and foreign matter through the peeled part of the surface mount type light-emitting diode device is eliminated, thereby Improve device reliability.
本发明表面安装型发光二极管的一个端子部分和相应的接线部分,以及另一个端子部分和安装部分通过窄小的过渡线部分进行连接,采用这种方式,使平行于分别安设各端子部分的所述基板边的铸型部分两个边和所述过渡线部分交叉,则进一步加大剥离阻力,以使发光二极管工作更加可靠。One terminal portion of the surface-mounted light-emitting diode of the present invention and the corresponding wiring portion, and the other terminal portion and the mounting portion are connected through a narrow transition line portion. The two sides of the mold part on the side of the substrate intersect with the transition line to further increase the peeling resistance so that the light emitting diode works more reliably.
Claims (2)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP152230/1995 | 1995-05-26 | ||
JP7152230A JPH08321634A (en) | 1995-05-26 | 1995-05-26 | Surface mount light emitting diode |
JP152230/95 | 1995-05-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1137176A CN1137176A (en) | 1996-12-04 |
CN1078388C true CN1078388C (en) | 2002-01-23 |
Family
ID=15535940
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN96102727A Expired - Fee Related CN1078388C (en) | 1995-05-26 | 1996-03-15 | Surface mounting type light emitting diode |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPH08321634A (en) |
CN (1) | CN1078388C (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3900595B2 (en) * | 1997-06-23 | 2007-04-04 | 日亜化学工業株式会社 | Photoelectric device |
JP4019474B2 (en) * | 1997-12-01 | 2007-12-12 | 松下電器産業株式会社 | Method for manufacturing light emitting device |
JP3895086B2 (en) * | 1999-12-08 | 2007-03-22 | ローム株式会社 | Chip-type semiconductor light-emitting device |
JP2003179271A (en) * | 2000-03-17 | 2003-06-27 | Matsushita Electric Ind Co Ltd | Semiconductor light emission device, its manufacturing method, and surface light emission device |
JP3913138B2 (en) * | 2002-08-16 | 2007-05-09 | ローム株式会社 | Semiconductor device using semiconductor chip |
JP3924481B2 (en) * | 2002-03-08 | 2007-06-06 | ローム株式会社 | Semiconductor device using semiconductor chip |
AU2003211644A1 (en) * | 2002-03-08 | 2003-09-22 | Rohm Co., Ltd. | Semiconductor device using semiconductor chip |
JP2004266246A (en) * | 2003-02-12 | 2004-09-24 | Toyoda Gosei Co Ltd | Light emitting device |
JP5290543B2 (en) * | 2007-07-20 | 2013-09-18 | スタンレー電気株式会社 | Light emitting device |
JP6262816B2 (en) * | 2011-02-16 | 2018-01-17 | ローム株式会社 | LED module |
JP7029223B2 (en) * | 2016-07-13 | 2022-03-03 | ローム株式会社 | Semiconductor light emitting device |
JP2020020971A (en) | 2018-08-01 | 2020-02-06 | Necディスプレイソリューションズ株式会社 | Display system and display system control method |
JP6822455B2 (en) * | 2018-09-19 | 2021-01-27 | 日亜化学工業株式会社 | Light emitting device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US229638A (en) * | 1880-07-06 | Fruit-jar | ||
JP4068543B2 (en) * | 2003-10-14 | 2008-03-26 | Tdk株式会社 | Noise absorber |
-
1995
- 1995-05-26 JP JP7152230A patent/JPH08321634A/en active Pending
-
1996
- 1996-03-15 CN CN96102727A patent/CN1078388C/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US229638A (en) * | 1880-07-06 | Fruit-jar | ||
JP4068543B2 (en) * | 2003-10-14 | 2008-03-26 | Tdk株式会社 | Noise absorber |
Also Published As
Publication number | Publication date |
---|---|
JPH08321634A (en) | 1996-12-03 |
CN1137176A (en) | 1996-12-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1078388C (en) | Surface mounting type light emitting diode | |
JP4065051B2 (en) | Surface mount LED and manufacturing method thereof | |
US5882949A (en) | Method of making compact light-emitting device with sealing member | |
CN1280900C (en) | Semiconductor device with plastic packaged | |
KR101939864B1 (en) | Carrier device, electrical device having a carrier device and method for producing same | |
KR100787705B1 (en) | Embedded metal heat sink for semiconductor device and manufacturing method thereof | |
CN101150121A (en) | Flex circuits with improved reliability and heat dissipation | |
CN1735974A (en) | Light source module and manufacturing method thereof | |
CN101061590A (en) | Illuminator and method for producing such illuminator | |
KR101070098B1 (en) | Printed circuit board and fabricating method of the same | |
US5442143A (en) | Core for electrical connecting substrates and electrical connecting substrates with core, as well as process for the production thereof | |
US6778403B2 (en) | Wiring board having terminal | |
US7867908B2 (en) | Method of fabricating substrate | |
TWI221027B (en) | Method for the manufacture of an electrical leadframe and a surface mountable semiconductor component | |
CN102881804B (en) | Substrate structure, semiconductor device array and semiconductor device having the same | |
JP3158018B2 (en) | Horizontal light emitting LED and method for manufacturing the same | |
JP2012204754A (en) | Lead frame for led light emitting element, manufacturing method of the lead frame, and led package using the lead frame | |
JP4023698B2 (en) | Manufacturing method of side-use electronic component with bottom electrode | |
CN102714267A (en) | Package for semiconductor, and heat dissipating lead frame | |
US6379781B1 (en) | Printed circuit board material and method of manufacturing board material and intermediate block body for board material | |
CN102804937A (en) | Light-emitting device | |
JPH11112036A (en) | Surface mounting semiconductor device | |
CN1145225C (en) | Chip type light emitting diode and manufacturing method thereof | |
KR101161408B1 (en) | Light emitting diode package and manufacturing method for the same | |
JP2960882B2 (en) | Surface mount type LED element and method of manufacturing the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20020123 Termination date: 20150315 |
|
EXPY | Termination of patent right or utility model |