CN107768424B - A Wide Bandgap Semiconductor Lateral Superjunction Double Diffusion Transistor with Multi-loop Electric Field Modulation Substrate - Google Patents
A Wide Bandgap Semiconductor Lateral Superjunction Double Diffusion Transistor with Multi-loop Electric Field Modulation Substrate Download PDFInfo
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- 230000005684 electric field Effects 0.000 title claims abstract description 95
- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 239000000758 substrate Substances 0.000 title claims abstract description 46
- 238000009792 diffusion process Methods 0.000 title abstract description 10
- 230000015556 catabolic process Effects 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims description 24
- 239000003989 dielectric material Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 7
- 230000005669 field effect Effects 0.000 abstract description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 238000001727 in vivo Methods 0.000 description 3
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/65—Lateral DMOS [LDMOS] FETs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/109—Reduced surface field [RESURF] PN junction structures
- H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
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- H—ELECTRICITY
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
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Abstract
本发明公开一种具有多环电场调制衬底的宽带隙半导体横向超结双扩散晶体管。该结构中漂移区下方的衬底为电荷补偿多环结构。衬底多环电荷补偿可以扩展横向双扩散金属氧化物半导体场效应晶体管的纵向空间电荷区，同时该多环结构还能在表面横向电场和体内纵向电场分布中均引入新的电场峰，能消除横向超结存在的衬底辅助耗尽问题，利用电场调制效应对表面横向电场和体内纵向电场同时进行调制，使得表面横向电场和体内纵向电场同时优化。该结构不仅突破了横向双扩散晶体管由于纵向耐压受限而带来的击穿电压饱和问题，还能消除超结存在的衬底辅助耗尽的问题，使得表面横向电场和体内纵向电场同时优化，大幅度提高器件的击穿电压。
The invention discloses a wide-bandgap semiconductor lateral superjunction double-diffusion transistor with a multi-loop electric field modulation substrate. In this structure, the substrate under the drift region is a charge-compensated multi-ring structure. Substrate multi-ring charge compensation can expand the vertical space charge region of the lateral double-diffused metal-oxide-semiconductor field effect transistor, and the multi-ring structure can also introduce new electric field peaks in both the surface lateral electric field and the bulk vertical electric field distribution, which can eliminate the For the substrate-assisted depletion problem in lateral superjunctions, the surface lateral electric field and the bulk vertical electric field are simultaneously modulated by the electric field modulation effect, so that the surface lateral electric field and the bulk longitudinal electric field are simultaneously optimized. This structure not only breaks through the breakdown voltage saturation problem caused by the limited vertical withstand voltage of lateral double-diffused transistors, but also eliminates the problem of substrate-assisted depletion existing in superjunctions, so that the surface lateral electric field and the bulk vertical electric field are simultaneously optimized. , greatly improving the breakdown voltage of the device.
Description
Technical Field
The invention relates to the technical field of semiconductor power devices, in particular to a transverse super-junction double-diffusion metal oxide semiconductor field effect transistor.
Background
The Lateral Double-diffused metal oxide semiconductor field effect transistor (LDMOS) has the advantages of easy integration, good thermal stability, better frequency stability, low power consumption, multi-photon conduction, small power drive, high switching speed and the like, and is the core of an intelligent power circuit and a high-voltage device. However, due to the limitations of the first two generations of semiconductor materials represented by Si and GaAs, the third generation of wide bandgap semiconductor materials has been rapidly developed because of their excellent properties. The wide-bandgap semiconductor material has the characteristics of large forbidden bandwidth, high electron drift saturation velocity, small dielectric constant and good conductivity, has excellent properties and potential huge prospects in the field of power devices, and is very suitable for manufacturing radiation-resistant, high-frequency, high-power and high-density integrated semiconductor devices. Therefore, the performance of the wide bandgap power semiconductor device is significantly improved compared with the former two generations of semiconductor devices.
One of the most critical technologies for realizing the PIC (power integrated circuit) of the power integrated circuit is to require that the LDMOS (lateral-diffused MOSFET) must have low on-resistance to reduce the power loss of the PIC integrated circuit, while the 2.5 power relation between the off-state breakdown voltage and the on-state on-resistance of the MOS device limits the application range of the MOS device with high power, and the super junction structure relieves the contradiction to 1.33 power, so that applying the super junction technology to the LDMOS to form the SJ-LDMOS is an effective way to realize the PIC with ultra-low power loss. However, the super junction applied to the LDMOS has three problems: 1) the N-channel LDMOS has a P-type substrate which assists in depleting an N-type region of a super junction, so that a substrate-assisted depletion (SAD) problem is caused; 2) the traditional SJ-LDMOS only forms electric field modulation between an N region and a P region of a super junction, but does not have electric field modulation on the surface; 3) the SJ-LDMOS eliminating the substrate-assisted depletion can completely deplete the drift region, but is affected by the longitudinal electric field, so that the surface electric field is not uniformly distributed. In addition, as the length of the drift region of the device is increased, the breakdown voltage of the SJ-LDMOS device is mainly limited by the internal longitudinal voltage withstanding capability, namely the breakdown voltage of the SJ-LDMOS device gradually tends to be saturated along with the increase of the length of the drift region, namely the voltage saturation effect of the transverse super-junction power device.
In order to break the saturation effect of breakdown voltage, the early proposed LDMOS with the rebufl structure redistributes the electric field of the lateral high-voltage device by embedding a layer of N + -Floating layer in the body, breaking through the traditional electric field distribution form that the drain terminal is a high electric field and the source terminal is a low electric field, the high electric field of the high electric field region of the drain terminal is reduced by the equipotential effect of the N + -Floating layer, the breakdown voltage is increased when the silicon reaches its critical breakdown electric field, and the substrate of the device bears almost all the longitudinal withstand voltage.
Disclosure of Invention
The invention provides a wide band gap semiconductor transverse super-junction double-diffusion transistor with a multi-ring electric field modulation substrate, which not only breaks through the problem of breakdown voltage saturation of the transverse double-diffusion transistor caused by limited longitudinal withstand voltage, but also can achieve the effect of optimizing a surface transverse electric field and an internal longitudinal electric field at the same time, can eliminate the problem of substrate auxiliary depletion of a super junction, and greatly improves the breakdown voltage of a device.
The technical scheme of the invention is as follows:
the wide band gap semiconductor lateral super junction double-diffused transistor with the multi-ring electric field modulation substrate comprises:
a substrate of semiconductor material;
a base region formed on the surface of the substrate;
injecting a Super Junction (Super Junction) drift region formed by alternately arranging N columns and P columns on the surface of the substrate, wherein the Super Junction drift region is adjacent to the base region;
a source region formed on the surface of the base region;
a drain region formed on the surface of the super junction drift region;
it is characterized in that:
the material of the substrate is a wide band gap semiconductor material; the adjacent substrate area below the super junction drift region is set to be a multi-ring electric field modulation structure; the width (OA direction) of the multi-ring electric field modulation structure is equivalent to that of the super junction drift region, and the multi-ring electric field modulation structure takes one end close to the drain region as a center and expands towards one end close to the base region to form a plurality of rings;
each ring of the multi-ring electric field modulation structure is made of N-type or P-type doped wide-band gap semiconductor materials or dielectric materials; accordingly, adjacent rings are distinguished by any one or any combination of different materials, different doping types, different doping concentrations.
For example, the following three specific forms:
1. the multi-ring electric field modulation structure completely adopts wide-band gap semiconductor material
Each ring is made of N-type or P-type doped wide band gap semiconductor material; wherein the doping type and/or doping concentration of adjacent rings are different, i.e. (1) the doping type is different and the doping concentration is the same; (2) the doping type is the same but the doping concentration is different; (3) the doping types are different, and the doping concentrations are also different;
2. the multi-ring electric field modulation structure completely adopts dielectric materials, and the dielectric materials of adjacent rings are different.
3. Some rings of the multi-ring electric field modulation structure are made of wide-band-gap semiconductor materials, and some rings are made of dielectric materials, and can be distinguished by arranging the wide-band-gap semiconductor materials and the dielectric materials alternately, or still or simultaneously adopting the former two types of ways.
On the basis of the scheme, the invention further optimizes the following steps:
typical values for the substrate doping concentration of wide bandgap semiconductor materials are 1 x 1013cm-3～1×1015cm-3。
Typical doping concentration per ring in a multi-ring electric field modulation structure is 1 × 1014cm-3～1×1016cm-3。
The dielectric material is selected from silicon dioxide and hafnium oxide.
The proportion of the radial width (OB direction) of each ring in the multi-ring electric field modulation structure to the whole length of the super-junction drift region is adjusted according to the voltage-resistant requirement, the typical proportion value is 0.2-0.5, and the multi-ring electric field modulation structure does not exceed the whole length of the super-junction drift region.
The radial widths (OB direction) of the rings in the multi-ring electric field modulation structure are equal or the radial widths of the rings are different; the number of rings in the multi-ring electric field modulation structure is adjusted according to the withstand voltage requirement, and the typical value is 2-5.
The shape of the ring in the multi-ring electric field modulation structure is an arc ring or a step ring.
The shape of the ring in the multi-ring electric field modulation structure is a concentric ring.
For a device with the super-junction drift region thickness (OC direction) of 2 μm and the super-junction drift region length (OB direction) of 30 μm, when the breakdown voltage requirement is 500V, a concentric ring type multi-ring electric field modulation structure is adopted, multiple rings are doped at intervals of N/P, the number of the multiple rings is 2-5, the radial width (OB direction) of each ring accounts for 0.2-0.5 of the whole length of the super-junction drift region, and the multi-ring electric field modulation structure does not exceed the whole length of the super-junction drift region.
The wide band gap semiconductor material is gallium nitride, silicon carbide or diamond.
The technical scheme of the invention has the following beneficial effects:
the substrate area below the drift area of the SJ-LDMOS is set to be a multi-ring charge compensation structure, the longitudinal space charge area of the transverse super-junction double-diffusion metal oxide semiconductor field effect transistor can be expanded, meanwhile, a new electric field peak can be introduced into the distribution of a surface transverse electric field and an in-body longitudinal electric field by the multi-ring structure, the problem of auxiliary substrate depletion of the transverse super-junction can be solved, and the surface transverse electric field and the in-body longitudinal electric field are simultaneously modulated by utilizing an electric field modulation effect, so that the surface transverse electric field and the in-body longitudinal electric field are simultaneously optimized.
The structure not only breaks through the breakdown voltage saturation problem of the transverse super-junction double-diffusion transistor caused by limited longitudinal withstand voltage, but also can eliminate the substrate-assisted depletion problem existing in the transverse super-junction, so that the surface transverse electric field and the internal longitudinal electric field are optimized simultaneously, and the breakdown voltage of the device is greatly improved.
Drawings
Fig. 1 is a three-dimensional schematic diagram of a wide bandgap semiconductor lateral super junction double diffused transistor structure with a multi-ring electric field modulation substrate according to the present invention.
Fig. 2 is a sectional view along the OAC direction at the multi-ring charge compensation structure.
The reference numbers illustrate:
1-a wide bandgap semiconductor material substrate; 2-base region; a 3-source region; 4-a drain region; a 5, 6-super junction drift region; the individual rings of the 7, 8, 9, 10-polycyclic electric field modulation structure.
Detailed Description
Fig. 1 and 2 show a wide band gap semiconductor lateral super junction double diffused transistor with a multi-ring electric field modulation substrate:
the substrate 1 of wide band gap semiconductor material is doped with a concentration of the usual wide band gap semiconductor material, typically 1 x 1013cm-3～1×1015cm-3；
A base region 2 located on the surface of the wide band gap semiconductor substrate;
injecting N columns and P columns from the edge of the base region to the wide band gap semiconductor substrate, and alternately arranging to form Super Junction (Super Junction) drift regions 5 and 6;
a source region 3 positioned on the surface of the base region;
a drain region 4 positioned on the surface of the super junction drift region;
the multi-ring electric field modulation structure is positioned below the super junction drift region;
specifically, the method comprises the following steps:
each ring 7, 8, 9, and 10 of the multi-ring electric field modulation structure can be N-type or P-type doped silicon material with typical doping concentration up to 1 × 1014cm-3～1×1016cm-3；
The individual rings 7, 8, 9 and 10 of the multi-ring electric field modulation structure may also be a dielectric material such as silicon dioxide, hafnium oxide, etc.;
the ratio of the radial width (OB direction) of the rings of the respective rings 7, 8, 9 and 10 of the multi-ring electric field modulation structure to the overall length of the drift region can be adjusted according to the withstand voltage requirement. The ratio of the width of a ring of a typical multi-ring electric field modulation structure to the overall length of the drift region is 0.2-0.5;
the radial widths (OB direction) of the rings and the rings in the respective rings 7, 8, 9 and 10 of the multi-ring electric field modulation structure are either equal or unequal;
the number of rings of each ring 7, 8, 9 and 10 of the multi-ring electric field modulation structure can be adjusted according to the requirement of voltage resistance;
the shape of each ring 7, 8, 9, and 10 of the multi-ring electric field modulation structure may be a regular pattern, such as concentric circular rings. And the ring can also be in an irregular pattern, such as a common arc-shaped ring, a step-shaped ring and the like.
The multi-ring charge compensation of the arranged substrate can expand the longitudinal space charge area of the transverse super-junction double-diffusion metal oxide semiconductor field effect transistor, and simultaneously, the multi-ring structure can introduce new electric field peaks in the distribution of a surface transverse electric field and an in-vivo longitudinal electric field, so that the problem of auxiliary substrate depletion of the transverse super-junction can be solved, and the surface transverse electric field and the in-vivo longitudinal electric field are simultaneously modulated by utilizing an electric field modulation effect, so that the surface transverse electric field and the in-vivo longitudinal electric field are simultaneously optimized. The structure not only breaks through the breakdown voltage saturation problem of the transverse super-junction double-diffusion transistor caused by limited longitudinal withstand voltage, but also can eliminate the substrate auxiliary depletion problem existing in the transverse super-junction, so that the surface transverse electric field and the internal longitudinal electric field are optimized simultaneously, and the breakdown voltage of the device is greatly improved.
For a thin drift region (2 mu m) N-channel LDMOS, when the length of the drift region is 30 mu m, the breakdown voltage of a common LDMOS is only about 300V, but by adopting the structure of the invention, the breakdown voltage of the device can be improved to about 750V by utilizing the concentric ring structure with 10 mu m width and N/P/N type interval doping, and the breakdown voltage is improved by 150%.
For a thin drift region (2 mu m) N-channel LDMOS, when the length of the drift region is 60 mu m, the breakdown voltage of a common LDMOS is only about 400V, but by adopting the structure of the invention, the breakdown voltage of the device can be increased to 1500V by utilizing the concentric ring structure with 20 mu m width and N/P/N type interval doping, and the breakdown voltage is increased by 275%.
Of course, the LDMOS of the present invention may also be a P-channel LDMOS, and the structure thereof is equivalent to that of an N-channel LDMOS, which is not described herein again.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, many modifications and substitutions can be made without departing from the technical principle of the present invention, and these modifications and substitutions also fall into the protection scope of the present invention.
Claims (8)
1. A wide bandgap semiconductor lateral super junction double diffused transistor with a multi-ring electric field modulated substrate comprising:
a substrate of semiconductor material;
a base region formed on the surface of the substrate;
injecting a Super Junction (Super Junction) drift region formed by alternately arranging N columns and P columns on the surface of the substrate, wherein the Super Junction drift region is adjacent to the base region;
a source region formed on the surface of the base region;
a drain region formed on the surface of the super junction drift region;
the method is characterized in that:
the material of the substrate is a wide band gap semiconductor material; the adjacent substrate area below the super junction drift region is set to be a multi-ring electric field modulation structure; the width of the multi-ring electric field modulation structure is equivalent to that of the super junction drift region, and the multi-ring electric field modulation structure is expanded to form a multi-ring from one end close to the base region to the end close to the drain region as the center; the ratio of the radial width of each ring to the whole length of the super-junction drift region is 0.2-0.5, and the multi-ring electric field modulation structure does not exceed the whole length of the super-junction drift region; the radial widths of all rings in the multi-ring electric field modulation structure are equal or different; the number of the rings in the multi-ring electric field modulation structure is 2-5;
each ring of the multi-ring electric field modulation structure is made of N-type or P-type doped wide-band gap semiconductor materials or dielectric materials; accordingly, adjacent rings are distinguished by any one or any combination of different materials, different doping types, different doping concentrations.
2. The wide bandgap semiconductor lateral super junction double diffused transistor with multiple ring electric field modulation substrate of claim 1, wherein: substrate doping concentration of wide band gap semiconductor material is 1 x 1013cm-3～1×1015cm-3。
3. The wide bandgap semiconductor lateral super junction double diffused transistor with multiple ring electric field modulation substrate of claim 1, wherein: in the multi-ring electric field modulation structure, the doping concentration of each ring is 1 multiplied by 1014cm-3～1×1016cm-3。
4. The wide bandgap semiconductor lateral super junction double diffused transistor with multiple ring electric field modulation substrate of claim 1, wherein: the dielectric material is selected from silicon dioxide and hafnium oxide.
5. The wide bandgap semiconductor lateral super junction double diffused transistor with multiple ring electric field modulation substrate of claim 1, wherein: the shape of the ring in the multi-ring electric field modulation structure is an arc-shaped ring or a step-shaped ring.
6. The wide bandgap semiconductor lateral super junction double diffused transistor with multiple ring electric field modulation substrate of claim 5, wherein: the shape of the ring in the multi-ring electric field modulation structure is a concentric ring.
7. The wide bandgap semiconductor lateral super junction double diffused transistor with multiple ring electric field modulation substrate of claim 1, wherein: for a device with the super-junction drift region thickness of 2 microns and the super-junction drift region length of 30 microns, when the breakdown voltage requirement is 750V, a multi-ring electric field modulation structure in the form of concentric rings is adopted, the multiple rings are doped at intervals of N/P, the number of the multiple rings is 2-5, the radial width of each ring accounts for 0.2-0.5 of the whole length of the super-junction drift region, and the multi-ring electric field modulation structure does not exceed the whole length of the super-junction drift region.
8. The wide bandgap semiconductor lateral super junction double diffused transistor with multiple ring electric field modulation substrate of claim 1, wherein: the wide band gap semiconductor material is gallium nitride, silicon carbide or diamond.
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| US4288802A (en) * | 1979-08-17 | 1981-09-08 | Xerox Corporation | HVMOSFET Driver with single-poly gate structure |
| US5091336A (en) * | 1985-09-09 | 1992-02-25 | Harris Corporation | Method of making a high breakdown active device structure with low series resistance |
| CN1301044A (en) * | 1999-12-22 | 2001-06-27 | 松下电工株式会社 | Semiconductor device and manufacture thereof |
| CN104124274A (en) * | 2014-01-14 | 2014-10-29 | 西安后羿半导体科技有限公司 | Super junction lateral double diffusion metal oxide semiconductor field effect transistor and manufacturing method thereof |
| CN106876464A (en) * | 2016-12-29 | 2017-06-20 | 西安电子科技大学 | A kind of lateral double diffusion metal oxide semiconductor FET |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP3944461B2 (en) * | 2002-03-27 | 2007-07-11 | 株式会社東芝 | Field effect transistor and its application device |
| US7023050B2 (en) * | 2003-07-11 | 2006-04-04 | Salama C Andre T | Super junction / resurf LDMOST (SJR-LDMOST) |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4288802A (en) * | 1979-08-17 | 1981-09-08 | Xerox Corporation | HVMOSFET Driver with single-poly gate structure |
| US5091336A (en) * | 1985-09-09 | 1992-02-25 | Harris Corporation | Method of making a high breakdown active device structure with low series resistance |
| CN1301044A (en) * | 1999-12-22 | 2001-06-27 | 松下电工株式会社 | Semiconductor device and manufacture thereof |
| CN104124274A (en) * | 2014-01-14 | 2014-10-29 | 西安后羿半导体科技有限公司 | Super junction lateral double diffusion metal oxide semiconductor field effect transistor and manufacturing method thereof |
| CN106876464A (en) * | 2016-12-29 | 2017-06-20 | 西安电子科技大学 | A kind of lateral double diffusion metal oxide semiconductor FET |
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