CN107727246A - High-vacuum infrared sensor and packaging method thereof - Google Patents

Abstract

The invention discloses a high-vacuum infrared sensor and a packaging method thereof, wherein the high-vacuum infrared sensor comprises the following steps: the method comprises coating colloid on the cavity of the base, adhering the infrared sensing chip in the cavity, cleaning the welding point of the base and the conductive contact of the infrared sensing chip with plasma, electrically connecting the conductive contact and the welding point with each other by wire bonding, and pre-welding the solder sheet in the base. An optical perspective window is prepared, the optical perspective window is cleaned by plasma, a getter is fixedly connected to the optical perspective window by adhesion or coating technology, the optical perspective window and a base are sent into a reflow furnace together, the getter on the optical perspective window is heated in a heating mode to enable the getter to reach a working state, a solder sheet of the base is melted by the reflow furnace to weld the optical perspective window on the base, and the cavity forms an infrared sensor in a high vacuum state.

Description

High vacuum infrared sensor and packaging method thereof

technical field

The present invention relates to an infrared sensor, especially a two-piece high vacuum packaged infrared sensor without a thermoelectric cooler (Thermoelectric Cooling, TEC).

Background technique

It is known that the structure of the infrared sensor currently used for sensing heat source radiation has a metal base, and the metal base has a cavity, and a thermoelectric cooler (TEC) is fixed in the cavity. An infrared sensor chip is fixed on the surface of the device, and a getter is fixed in the cavity, and a solder sheet is arranged above the metal base, and a glass layer is fixed on the metal base with the solder sheet . When the infrared sensor is in use, external heat source radiation (infrared rays) enters the cavity through the glass layer, and the heat source radiation will be sensed by the infrared sensing chip to output a clear image. A getter is used to keep the cavity in a vacuum state, and the thermoelectric cooler is used to absorb the heat source generated when the infrared sensing chip is working, so that the infrared sensing chip can work normally.

Since the above-mentioned getter of the infrared sensor is on the same side of the metal base as the infrared sensing chip, the activation of the getter needs to be in a high temperature environment (>300 degrees or more), which makes the infrared sensing chip unable to withstand such a high temperature, and loses the ability to sense temperature. The getter and the infrared sensing chip are located on the same side, and the metal base needs to be fabricated with welding pads and bonded to the getter, resulting in higher manufacturing costs for the metal base. The getter is designed on the same side as the infrared sensor chip, and its activation method needs to be activated by electric stimulation, which cannot be activated by heating, because the construction cost of the machine used by the electric stimulation method is relatively high. Moreover, a thermoelectric cooler is fixed in the metal base, so that the volume of the packaged module cannot be used with a smaller design to present a larger volume.

Contents of the invention

In order to solve the above-mentioned technical problems, the present invention provides a high-vacuum infrared sensor packaging method, including: a) a base is provided, the base has a cavity and a plurality of conductive parts, and one end of the plurality of conductive parts extends on An exposed solder joint is formed in the cavity; b) Colloid is applied to the cavity of the base, and an infrared sensing chip is adhered inside the cavity, the infrared sensing chip has an infrared wafer, the The wafer is electrically adhered to the circuit board, and the circuit board has a plurality of conductive contacts; c), cleaning the plurality of solder joints of the base and the plurality of conductive contacts of the infrared sensing chip with plasma; d ), electrically connecting a plurality of metal wires between the plurality of solder joints of the base and the plurality of conductive contacts of the infrared sensing chip; e), placing the solder sheet in the cavity of the base , to detect the welding stability of the solder sheet; f), to input signals to the infrared sensing chip to test whether the wafer of the infrared sensing chip is damaged; g), to have an optical perspective window, to clean the optical The see-through window; h), the getter is fixed on the optical see-through window by adhesive technology or coating technology; i), the optical see-through window with the getter and the base with the infrared sensing chip are fixed together into the reflow furnace; j), heat the getter on the optical perspective window by heating, activate the getter to reach the working state; k), use the reflow furnace to put the solder on the base The optical see-through window is welded to the base by melting the sheet, so that the cavity is in a high vacuum state.

In an embodiment of the present invention, in step a), the cavity of the base has a raised wall, and the solder sheet is disposed on the raised wall.

In an embodiment of the present invention, the base in step a) is made of plastic or ceramic material, the plurality of conductive parts of the base are pins with pins, and the conductive parts are arranged on both sides of the base A dual-in-line packaging structure corresponding to the state is formed, or a plurality of the pins can be arranged on four sides of the base.

In an embodiment of the present invention, the base in step a) is made of plastic or ceramic material, the base is a pinless base, and the plurality of conductive parts are arranged on four sides of the base.

In an embodiment of the present invention, it is characterized in that processes such as cleaning the base and drying the base are also included between step a) and step b).

In an embodiment of the present invention, the glue in step b) is insulating glue or conductive glue.

In an embodiment of the present invention, between the step b) and the step c), it further includes: after the base and the infrared sensing chip are solidified, they are baked in an oven to dry the colloid.

In an embodiment of the present invention, the optical see-through window in step g) has a first surface and a second surface thereon, and a mask layer is provided on the second surface.

In an embodiment of the present invention, the optical see-through window is a germanium wafer, allowing far-infrared wavelengths of 8 μm-14 μm to pass through.

In an embodiment of the present invention, the getter in step h) is fixed on the second surface of the optical see-through window.

In an embodiment of the present invention, the getter is in the shape of a column or a sheet.

In one embodiment of the present invention, step k) further includes a step l), the step l) will test the welding of the base and the optical see-through window after the base and the optical see-through window are welded Whether it is fully connected, so that the cavity will not leak.

In one embodiment of the present invention, step l) further includes step m) after the base and the optical see-through window are fused to form a module, and the input signal is used to detect whether the imaging signal of the infrared sensing chip is normal.

The present invention also provides a high-vacuum infrared sensor, which includes: a base, an infrared sensing chip, an optical see-through window, a getter and a plurality of metal wires. The base has a cavity and a plurality of conductive parts, and one end of the plurality of conductive parts extends in the cavity to form solder joints. The infrared sensing chip is fixedly connected in the cavity, on which there is an infrared wafer, and the wafer is electrically connected to a circuit board, and the circuit board has a plurality of conductive contacts. A plurality of metal wires are electrically connected to the plurality of welding points and the plurality of conductive contacts. The optical see-through window is sealed on the cavity of the base, and has a first surface and a second surface on it. The getter is disposed on the second surface of the optical see-through window. Wherein, after the base and the optical see-through window are sealed, the getter is sealed in the cavity formed by the substrate and the optical see-through window.

In an embodiment of the invention, the cavity of the base has a convex wall.

In an embodiment of the present invention, a solder piece is further included, and the solder piece is disposed on the convex wall to weld the optical see-through window.

In an embodiment of the invention, a photomask layer is disposed on the second surface.

In an embodiment of the present invention, the optical see-through window is a germanium wafer, allowing far-infrared wavelengths of 8 μm-14 μm to pass through.

In one embodiment of the present invention, the base is made of plastic or ceramic material, the plurality of conductive parts of the base are pins with pins, and the plurality of conductive parts are arranged on two sides of the base to form corresponding In a dual-in-line package structure, or a plurality of pins can be arranged on four sides of the base.

In an embodiment of the present invention, the base is made of plastic or ceramic material, the base is a pinless base, and the plurality of conductive parts are disposed on four sides of the base.

The present invention can achieve following effect:

The invention provides an infrared sensor without a thermoelectric cooler, which reduces the volume of the infrared sensor and can be designed towards miniaturization, reduces the packaging process, thereby reducing the generation of parts and the pollution of the base, thereby improving the leakage rate of the package and service life, and reduce production costs.

In the present invention, the getter is designed on the other side away from the infrared sensing chip, and it is designed to be isolated from the infrared sensing chip. The air agent can receive the activation temperature, while ensuring the complete function of the infrared sensing side chip and achieving a perfect package with a high degree of vacuum.

Description of drawings

Fig. 1 is a schematic flow chart of an infrared sensor packaging method according to a first embodiment of the present invention;

Fig. 2 is a schematic perspective view of the appearance of the infrared sensor according to the first embodiment of the present invention;

Fig. 3 is a three-dimensional exploded schematic diagram of the appearance of Fig. 1;

4 is a schematic diagram of the second surface of the optical see-through window of FIG. 1;

5 is a schematic diagram of another embodiment of the second surface of the optical see-through window in FIG. 1;

Fig. 6 is a schematic diagram of another embodiment of the second surface of the optical see-through window in Fig. 1;

Fig. 7 is a schematic side sectional view of Fig. 1;

FIG. 8 is a three-dimensional exploded schematic diagram of the appearance of the infrared sensor according to the second embodiment of the present invention.

【Symbol Description】

Step S100 ~ step S134;

Infrared sensors 100, 200;

Base 110, 210;

cavity 112, 212;

Conductive parts 114, 214;

Convex part 116;

Solder spots 118, 218;

Infrared sensing chips 120, 220;

Wafer 122;

circuit board 124;

Conductive contacts 126;

Solder pieces 130, 230;

Optical see-through windows 140, 240;

first surface 142;

second surface 144;

mask layer 146;

Getters 150, 150a, 150b, 250;

Metal wire 160.

detailed description

The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, so that those skilled in the art can better understand the present invention and implement it, but the examples given are not intended to limit the present invention.

Please refer to Figure 1, which is a schematic flow chart of the infrared sensor packaging method of the first embodiment of the present invention; and Figures 2-7 of the first embodiment are the same as the packaging technology of Figure 8 of the second embodiment, and the first embodiment is specifically cited 2-7 and FIG. 1 for illustration, as shown in the figure: first, as in step S100, a base 110 is provided, the base 110 has a cavity 112 and a plurality of conductive parts 114, and the plurality of conductive parts 114 One end extends into the cavity 112 to form an exposed solder joint 118 . The cavity 112 of the base 110 has a protrusion 116 for fixing the optical see-through window 140 . In this drawing, the base 110 is made of plastic or ceramic material, and some conductive parts 114 of the base 110 are pins with pins, and the conductive parts 114 are arranged on two sides of the base 110 to form corresponding states. A dual in-line package (Dual In-Line Package, DIP) structure, or a plurality of the pins are provided on the four sides of the base 110 to form a four-line package structure, or a leadless base (leadless chip carrier) structure .

Step S102 , cleaning process, sending the base 110 into the machine for cleaning with clean water or chemicals to clean the remaining impurities on the base 110 .

Step S104 , baking process, sending the cleaned base 110 into an oven for baking at an appropriate temperature to dry the remaining water or chemicals on the base 110 .

Step S106 , die bonding process, coating the cavity 112 inside the base 110 with glue, so that the infrared sensing chip 120 is adhered inside the cavity 112 . The infrared sensing chip 120 is electrically bonded to a circuit board 124 by means of an infrared wafer 122 , and the circuit board 124 has a plurality of conductive contacts 126 . In this drawing, the glue is insulating glue or conductive glue.

Step S108 , baking process, after the base 110 and the infrared sensing chip 120 are solidified, they are sent to an oven for baking to make the glue dry.

Step S110, plasma treatment, before the base 110 and the infrared sensing chip 120 are bonded, use plasma to clean the plurality of solder joints 118 of the base 110 and the plurality of conductive contacts 126 of the infrared sensing chip 120 cleaning to avoid oxidation of the plurality of solder joints 118 and the plurality of conductive contacts 126 .

Step S112 , wire bonding process, using a machine to electrically connect metal wires between the solder joints 118 of the base 110 and the conductive contacts 126 of the infrared sensing chip 120 .

Step S114 , pre-soldering process, placing the pre-soldered solder sheet 130 on the convex wall portion 116 of the base 110 for soldering with the optical see-through window 140 when entering the reflow oven.

Step S116 , checking process, the solder sheet 130 in step S114 is checked by personnel to be soldered firmly.

Step S118 , the testing process, after the above-mentioned steps of soldering 130 are processed, an input signal is sent to the infrared sensing chip 120 to test whether the wafer 122 of the infrared sensing chip 120 is damaged.

Step S120, prepare an optical see-through window 140, which has a first surface 142 and a second surface 144, and a mask layer 146 is arranged on the second surface 144, and the mask layer 146 is used to cover the optical see-through window 140 unnecessary areas. In this figure, the optical see-through window 140 is a germanium wafer, which allows the far-infrared wavelengths of 8 μm-14 μm to pass through.

Step S122 , plasma treatment. Before welding the base 110 and the optical see-through window 140 , the base 110 is used to clean the welded part (not shown) on the optical see-through window 140 to avoid oxidation of the welded part.

Step S124 , getter treatment, disposing the getter 150 on the second surface 144 of the optical see-through window 140 by adhesive technology or coating technology such as printing or sputtering. In this drawing, the getter is in the shape of a column or a sheet.

Step S126 , enter the reflow furnace, and send the optical see-through window 140 with the getter 150 and the base 110 on which the infrared sensing chip 120 is bonded into the reflow furnace together.

Step S128, activation processing, heating the getter 150 on the optical perspective window 140 by means of machine heating, so that the getter 150 reaches a working state.

Step S130, fusing and sealing operation, after the getter 150 is activated, use the reflow furnace to melt and weld the solder sheet 130 of the base 110 to weld the optical see-through window 140, so that the cavity 112 forms the infrared sensor 100 in a high vacuum state module.

Step S132 , leak testing process, after the base 110 and the optical see-through window 140 are welded, test whether the welding joint between the base 110 and the optical see-through window 140 is completely bonded, so that the cavity 112 will not produce air leakage.

Step S134 , module electrical testing, after the base 110 and the optical see-through window 140 are fused to form a module, the input signal is used to detect whether the imaging signal of the infrared sensing chip 120 is normal.

By means of the above-mentioned packaging method, the heat treatment of delaminating the getter 150 and the infrared sensing chip 120 is completed to complete a two-piece high vacuum packaged infrared sensor without a thermoelectric cooler.

Please refer to Figures 2, 3 and 4, which are the three-dimensional appearance of the first embodiment of the infrared sensor of the present invention and the three-dimensional decomposition of the appearance of Figure 2 and the second surface schematic diagram of the optical see-through window. As shown in the figure: the high-vacuum infrared sensor 100 completed according to the above packaging process of the present invention includes: a base 110, an infrared sensing chip 120, a solder sheet 130, an optical see-through window 140 and a suction 150 doses. Wherein, the optical see-through window 140 is sealed above the base 110 to form a high-vacuum cavity 112 inside the base 110 to package the infrared sensing chip 120 and the getter 150, so that the infrared sensing The chip 120 can read infrared images.

The base 110 has a cavity 112 and a plurality of conductive parts 114 , and one end of the plurality of conductive parts 114 extends in the cavity 112 to form an exposed solder joint 118 . The cavity 112 of the base 110 has a protrusion 116 for fixing the optical see-through window 140 . In this figure, the base 110 is made of plastic or ceramic material, and the plurality of conductive parts 114 of the base 110 are pins with pins, and the conductive parts 114 are arranged on two sides of the base 110 to form phase A corresponding dual in-line package (Dual In-Line Package, DIP) structure, or the plurality of pins can be disposed on four sides of the base 110 .

The infrared sensing chip 120 is electrically bonded to a circuit board (PCB) 124 with an infrared wafer (die) 122, and the circuit board 124 has a plurality of conductive contacts (PAD) 126 on the infrared sensing chip. After 120 is fixed in the cavity 112 of the base 110, plasma (Plasma) treatment will be carried out so that the plurality of solder joints 118 and the plurality of conductive contacts 126 will not be oxidized. Wire Bond processing, with a plurality of metal wires 160 electrically connected to the plurality of solder joints 118 and the plurality of conductive contacts 126, so that the infrared sensing chip 120 and the plurality of conductive contacts of the base 110 The portion 114 is electrically connected.

The solder sheet 130 is arranged on the convex wall portion 116, and when the base 110 and the optical see-through window 140 enter the reflow furnace for fusing and sealing operation, the optical see-through window 140 can be packaged in the solder sheet 130. On the base 110 , the cavity 112 is formed into a high vacuum state.

The optical see-through window 140 is sealed to the cavity 112 of the base 110, and has a first surface 142 and a second surface 144 on it, and a mask layer 146 is arranged on the second surface 144. The mask layer 146 is used to shield unnecessary areas of the optical see-through window 140 . In this figure, the optical see-through window 140 is a germanium wafer, which allows the far-infrared wavelengths of 8 μm-14 μm to pass through.

The getter 150 is disposed on the second surface 144 of the optical see-through window 140 by means of adhesion, welding or coating such as printing or sputtering. When the getter 150 cannot perform the function of getting air, the vacuum degree of the inner cavity 112 of the base 110 will be insufficient, so that the infrared image cannot show a clear image, and the service life will be relatively reduced. Therefore, before the base 110 and the optical see-through window 140 are sealed, the getter 150 is activated first, and then the base 110 and the optical see-through window 140 are sealed, so that the inside of the cavity 112 has a very high vacuum The degree is higher, so that the received infrared image can present a clearer image, so as to increase the service life of the infrared sensor 100 . In this drawing, the getter 150 is columnar; after the getter 150 is activated by heating, the base 110 and the optical see-through window 140 are packaged, so that the getter 150 and the infrared sensor The chip 120 is manufactured in layers to achieve a better vacuum packaging technology.

Please refer to FIG. 5 , which is a schematic diagram of another embodiment of the second surface of the optical see-through window in FIG. 2 . As shown in the figure: this embodiment is substantially the same as that in FIG. 4, the difference is that the getter 150a is in the form of a sheet, and is arranged on the second surface 144 of the optical see-through window 140 with adhesion, between the base 110 and Before the optical see-through window 140 is packaged, the getter 150a is similarly activated by heating, and then the base 110 and the optical see-through window 140 are packaged, so that the getter 150a and the infrared sensing chip 120 are layered. Heat treatment to complete a better high-vacuum packaging technology.

Please refer to FIG. 6 , which is a schematic view of another embodiment of the second surface of the optical see-through window in FIG. 2 . As shown in the figure: this embodiment is roughly the same as that of FIGS. 4 and 5, except that the getter 150b is formed on the second surface 144 of the optical see-through window 140 by coating such as printing or sputtering. A specific pattern, the specific pattern will not affect the external infrared light entering the cavity 112 of the base 110 . After the getter 150b is coated, before the base 110 and the optical see-through window 140 are packaged, the getter 150b is activated by heating in the same way, and then the base 110 and the optical see-through window 140 Packaging, so that the getter 150b and the infrared sensing chip 120 are processed in layers to complete a better vacuum packaging technology.

Please refer to FIG. 7 , which is a schematic side sectional view of FIG. 1 . As shown in the figure: before the base 110 of the infrared sensor 100 of the present invention is packaged with the optical see-through window 140, the infrared sensing chip 120 is fixed in the cavity 112 of the base 110 by die-bonding technology. The wire bonding technology electrically connects the metal wires 160 to the plurality of solder joints 118 and the plurality of conductive contacts 126, and then fixes the getter 150 on the optical see-through window 140, and at the same time connects the base 110 to the plurality of conductive contacts 126. The optical see-through window 140 is sent into the reflow furnace, the getter 150 is first activated to reach the working state, and then the solder sheet 130 is melted by the reflow furnace, and the optical see-through window 140 is fixed on the base 110. After the sealing operation, the infrared sensing chip 120 and the getter 150 are packaged in the cavity 112 of the base 110 .

Since the getter 150 is activated before the base 110 and the optical see-through window 140 are packaged, and then the base 110 and the optical see-through window 140 are packaged, the getter 150 is separated from the infrared sensing chip 120. layer processing to complete a better vacuum packaging technology.

The activated getter 150 can absorb the residual gas inside the cavity 112, so that the cavity 112 forms a high vacuum state, and the infrared image received by the infrared sensing chip 120 can present a better appearance under the best high vacuum state. A clear image can also increase the service life of the infrared sensor 100 .

Please refer to FIG. 8 , which is an exploded perspective view of the appearance of the infrared sensor according to the second embodiment of the present invention. As shown in the figure: the structure of the infrared sensing chip 220, a solder sheet 230, an optical see-through window 240 and a getter 250 of the infrared sensor 200 disclosed in this embodiment is roughly the same as that of the aforementioned Fig. 2 to Fig. 7 , the difference is that the base 210 of this drawing is a leadless base (leadless chip carrier), the plurality of conductive parts 214 are arranged on the four sides of the base 210, and one end of the plurality of conductive parts 214 extends on the An exposed solder joint 218 is formed in the cavity 212 . After the infrared sensing chip 220 is fixed to the cavity 212 of the base 210, the infrared sensing chip 220 is electrically connected to the plurality of conductive parts 214 of the base 210 through the wire bonding process. link.

The above-mentioned embodiments are only preferred embodiments for fully illustrating the present invention, and the protection scope of the present invention is not limited thereto. Equivalent substitutions or transformations made by those skilled in the art on the basis of the present invention are all within the protection scope of the present invention. The protection scope of the present invention shall be determined by the claims.

Claims (20)

1. A high-vacuum infrared sensor packaging method, characterized in that, comprising: a) A base is provided, the base has a cavity and a plurality of conductive parts, one end of the plurality of conductive parts extends in the cavity to form a solder joint in an exposed state; b) Coating glue on the cavity of the base, and adhering an infrared sensing chip inside the cavity, the infrared sensing chip has an infrared wafer, and the wafer is electrically bonded to the circuit board , the circuit board has a plurality of conductive contacts; c), cleaning the plurality of solder joints of the base and the plurality of conductive contacts of the infrared sensing chip with plasma; d), electrically connecting a plurality of metal wires between the plurality of welding points of the base and the plurality of conductive contacts of the infrared sensing chip; e), place the solder sheet in the cavity of the base, and detect the welding stability of the solder sheet; f), giving an input signal to the infrared sensing chip to test whether the wafer of the infrared sensing chip is damaged; g), an optical perspective window is provided, and the optical perspective window is cleaned with plasma; h) Fixing the getter on the optical see-through window by means of adhesive technology or coating technology; i), send the optical perspective window of step h) and the base with the infrared sensor chip on the crystal together into the reflow furnace; j), heating the getter on the optical perspective window by means of heating, activating the getter to reach the working state; k) Using the reflow furnace to melt the solder sheet of the base and solder the optical see-through window to the base so that the cavity is in a high vacuum state. 2 . The high vacuum infrared sensor packaging method as claimed in claim 1 , wherein in step a), the cavity of the base has a raised wall, and the solder sheet is disposed on the raised wall. 3 . 3. The high-vacuum infrared sensor packaging method according to claim 1, wherein the base in step a) is made of plastic or ceramic material, and the plurality of conductive parts of the base are pinned contacts. pins, the conductive portion is arranged on two sides of the base to form a corresponding dual in-line packaging structure, or a plurality of the pins can be set on four sides of the base. 4. The high-vacuum infrared sensor packaging method as claimed in claim 1, wherein the base in step a) is made of plastic or ceramic material, the base is a pinless base, and the plurality of conductive set on the four sides of the base. 5 . The high vacuum infrared sensor packaging method according to claim 1 , further comprising steps of cleaning the base and drying the base between step a) and step b). 6 . 6 . The high vacuum infrared sensor packaging method according to claim 1 , wherein the glue in step b) is insulating glue or conductive glue. 7 . 7. The high-vacuum infrared sensor packaging method according to claim 1, characterized in that, between step b) and step c), further comprising: after the base and the infrared sensing chip are solidified, feeding Bake in the oven to dry the colloid. 8. The high-vacuum infrared sensor packaging method as claimed in claim 1, wherein the optical see-through window in step g) has a first surface and a second surface on it, and the second surface is provided with There is a mask layer. 9 . The high vacuum infrared sensor packaging method according to claim 8 , wherein the optical see-through window is a germanium wafer, allowing the far-infrared wavelength of 8 μm-14 μm to pass through. 10 . The high vacuum infrared sensor packaging method according to claim 9 , wherein the getter in step h) is fixed on the second surface of the optical see-through window. 11 . 11 . The high vacuum infrared sensor packaging method according to claim 10 , wherein the getter is in the shape of a column or a sheet. 12. The high-vacuum infrared sensor packaging method according to claim 1, characterized in that, after the k) step, a l) step is further included, and the l) step is after the base and the optical see-through window are welded, It will be tested whether the solder joint between the base and the optical window is fully bonded so that the cavity will not leak air. 13. The high-vacuum infrared sensor packaging method as claimed in claim 12, characterized in that, after step l) it also includes step m) after the base and the optical see-through window are welded to form a module, to input signal Detect whether the imaging signal of the infrared sensing chip is normal. 14. A high vacuum infrared sensor, characterized in that it comprises: A base with a cavity and a plurality of conductive parts, one end of the plurality of conductive parts extends in the cavity to form a solder joint; An infrared sensing chip, fixed in the cavity, has an infrared wafer on it, the wafer is electrically connected to a circuit board, and the circuit board has a plurality of conductive contacts; a plurality of metal wires electrically connected to the plurality of solder joints and the plurality of conductive contacts; an optical see-through window, to be sealed on the cavity of the base, having a first surface and a second surface; a getter disposed on the second surface of the optical see-through window; Wherein, after the base and the optical see-through window are sealed, the getter is sealed in the cavity formed by the substrate and the optical see-through window. 15. The high-vacuum infrared sensor as claimed in claim 14, characterized in that there is a convex wall in the cavity of the base. 16. The high-vacuum infrared sensor as claimed in claim 15, further comprising a solder piece, the solder piece is disposed on the convex wall to weld the optical see-through window. 17. The high vacuum infrared sensor as claimed in claim 14, wherein a photomask layer is disposed on the second surface. 18. The high-vacuum infrared sensor according to claim 14, characterized in that, the optical see-through window is a germanium wafer, allowing far-infrared wavelengths of 8 μm-14 μm to pass through. 19. The high-vacuum infrared sensor according to claim 14, wherein the base is made of plastic or ceramic material, the plurality of conductive parts of the base are pins with pins, and the plurality of conductive parts A dual-in-line packaging structure is formed on two sides of the base, or a plurality of pins can be arranged on four sides of the base. 20. The infrared sensor of high vacuum as claimed in claim 14, characterized in that, the base is made of plastic or ceramic material, the base is a base without pins, and the plurality of conductive parts are arranged on the base of the base. four sides.