CN103296043B - Image sensor package method and structure, imageing sensor module and formation method - Google Patents

Abstract

The invention provides an image sensor packaging method and structure, an image sensor module and a forming method. The image sensor packaging structure includes: an image sensor, the functional surface of the image sensor has a photosensitive area and a non-photosensitive area, the photosensitive area has a pixel unit, and the non-photosensitive area has a first electrode; The sensor is fixedly connected to the lead plate, the lead plate has a frame plate and a built-in wire that runs through the thickness of the frame plate, the frame plate has an opening, and the opening exposes the photosensitive area, and one end of the built-in wire is connected to the The first electrode is electrically connected. In the image sensor packaging structure provided by the present invention, each part can be manufactured separately and then packaged together, so the yield rate of each part can be controlled independently, so the image sensor packaging structure has high reliability, and at the same time, the image sensor packaging structure has Good heat dissipation performance, and can have ultra-thin thickness.

Description

Image sensor packaging method and structure, image sensor module and forming method

technical field

The invention relates to the field of image sensors, and is characterized in that it relates to an image sensor packaging method and structure, an image sensor module and a forming method.

Background technique

An image sensor is a semiconductor device device that converts optical information into electrical signals. Existing image sensors can be further classified into complementary metal oxide semiconductor (CMOS) image sensors and charge coupled device (CCD) image sensors.

Image sensors are developing toward miniaturization, and the new generation of electronic products has higher requirements for image sensor packaging structures, such as smaller shape and lower cost. However, traditional image sensor packaging methods usually lead the pads on the functional surface of the image sensor to the back, and then make conductive solder balls or pins on the back, so that the obtained image sensor packaging structure can be connected to external circuits. However, the existing image sensor packaging methods have the following disadvantages:

1. The existing image sensor packaging method needs to fabricate the back-side lead-out structure on the image sensor, that is, the back-side lead-out structure cannot be separated from the image sensor and must be fabricated separately first, so the yield rate of the back-side lead-out structure is not easy to control independently, and the back-side lead-out structure cannot be separated from the image sensor. The manufacturing yield of the structure is not high, resulting in low packaging process yield;

2. In addition to setting the rear lead-out structure in the existing image sensor packaging method, it is also necessary to set a protective substrate on the functional surface of the image sensor for protection. In this way, the functional surface and the back of the image sensor need to be increased to a certain thickness, so the image sensor cannot be integrated. The packaging structure is made thinner;

3. When setting the back lead-out structure for the image sensor, it is necessary to set an insulating layer and a protective layer on the back to protect the corresponding wires. However, the setting of these wires, insulating layers or protective layers not only increases the complexity of the image sensor package and process cost, and reduce the heat dissipation performance of the formed image sensor package structure.

Correspondingly, the existing image sensor packaging structure has the problems of low reliability, large thickness and poor heat dissipation performance. Due to the above-mentioned problems in the existing image sensor packaging structure and packaging method, the existing image sensor module formation method also has the problems of low production process yield, complicated process and high process cost, and the existing image sensor module also has large thickness and high cost. The problem of poor heat dissipation.

For more information about image sensor packaging, please refer to the Chinese patent application with publication number CN102544040A (published on July 4, 2012).

For this reason, there is an urgent need for a packaging method and packaging structure of an image sensor, as well as an image sensor module and its forming method, to solve the problems of complex process and high process cost of the existing image sensor packaging method, and the thickness of the existing image sensor packaging structure The problem of large size and poor heat dissipation performance, the problem of complex process and high process cost of the existing image sensor module forming method, and the problem of large thickness and poor heat dissipation performance of the existing image sensor module.

Contents of the invention

The problem to be solved by the present invention is to provide an image sensor packaging method and structure, an image sensor module and its forming method, so that the processes of the image sensor packaging method and the image sensor module forming method are simplified, the process cost is reduced, and the image sensor The packaging structure and the thickness of the image sensor module are reduced, and the heat dissipation performance is improved.

In order to solve the above problems, the present invention provides an image sensor packaging method, including:

A wafer is provided, the wafer has a plurality of image sensor units, the image sensor units have dicing lines between each other, the functional surface of each of the image sensor units has a photosensitive area and a non-photosensitive area, and the photosensitive area has pixels A unit, with a first electrode on the non-photosensitive area;

providing a lead plate having a frame plate and built-in wires penetrating through the thickness of the frame plate, the frame plate having an opening;

Fixing the lead plate on the functional surface of the image sensor unit, the opening exposes the photosensitive area, and one end of the built-in wire is electrically connected to the first electrode;

The wafer and the lead board are diced along the dicing lines.

Optionally, before the lead plate is fixed on the functional surface of the image sensor unit, a transparent substrate covering the opening is provided on the frame plate.

Optionally, after the lead plate is fixed on the functional surface of the image sensor unit, it also includes: setting a second electrode on the upper surface of the frame plate, and the other end of the built-in wire is connected to the second electrode. electrical connection.

Optionally, the frame plate includes a first upper surface and a second upper surface, the first upper surface is higher than the second upper surface; the second electrode is located on the first upper surface; the transparent The substrate is fixed on the second upper surface, and the upper surface of the transparent substrate is lower than the first upper surface.

Optionally, the second electrode is a conductive solder ball, the top of which is flush with the upper surface of the transparent substrate.

Optionally, the method further includes: before disposing the transparent substrate covering the opening on the frame plate, disposing an optical coating on at least one of the upper surface and the lower surface of the transparent substrate.

Optionally, the optical coating includes an infrared cut-off film or an anti-reflection film.

Optionally, the built-in wire is electrically connected to the first electrode by means of ultrasonic welding, reflow soldering or conductive adhesive bonding.

Optionally, at least one of capacitive elements and resistive elements is provided on the upper surface of the frame plate.

Optionally, the material of the frame plate includes ceramic material, organic material, glass material or silicon material.

In order to solve the above problems, the present invention also provides a method for forming an image sensor module, including:

Forming an image sensor packaging structure with the above-mentioned image sensor packaging method;

The built-in wires in the image sensor package structure are electrically connected to a printed circuit board;

A lens module is arranged on the printed circuit board to form an image sensor module.

Optionally, the method further includes: forming a protective frame on the side of the image sensor packaging structure before electrically connecting the printed circuit board to the built-in wire.

In order to solve the above problems, the present invention also provides an image sensor packaging structure, including:

An image sensor, the functional surface of the image sensor has a photosensitive area and a non-photosensitive area, the photosensitive area has a pixel unit, and the non-photosensitive area has a first electrode;

A lead plate fixedly connected with the image sensor, the lead plate has a frame plate and a built-in wire that runs through the thickness of the frame plate, the frame plate has an opening, the opening exposes the photosensitive area, and the built-in wire One end is electrically connected to the first electrode.

Optionally, it further includes: a transparent substrate, the transparent substrate is fixed on the frame plate and covers the opening.

Optionally, a second electrode is provided on the upper surface of the frame plate, and the other end of the built-in wire is electrically connected to the second electrode.

Optionally, the frame plate includes a first upper surface and a second upper surface, the first upper surface is higher than the second upper surface; the second electrode is located on the first upper surface; the transparent The substrate is fixed on the second upper surface, and the upper surface of the transparent substrate is lower than the first upper surface.

Optionally, the second electrode is a conductive solder ball, the top of which is flush with the upper surface of the transparent substrate.

Optionally, at least one of the upper surface and the lower surface of the transparent substrate has an optical coating.

Optionally, the optical coating includes an infrared cut-off film or an anti-reflection film.

Optionally, the built-in wire is electrically connected to the first electrode by welding or conductive adhesive bonding.

Optionally, the frame plate is provided with at least one of capacitive elements and resistive elements.

Optionally, the material of the frame plate includes ceramic material, organic material, glass material or silicon material.

In order to solve the above problems, the present invention also provides an image sensor module, including:

The image sensor packaging structure as described above;

a printed circuit board electrically connected to the built-in wires of the image sensor packaging structure;

The lens module is arranged on the printed circuit board.

Optionally, a protective frame is also included, fixed on the side of the image sensor packaging structure.

Compared with the prior art, the technical solution of the present invention has the following advantages:

The image sensor packaging method provided by the present invention has the following advantages: 1. First provide the chip and the lead plate respectively, and then fix them together, so the chip and the lead plate can be controlled separately, so the chip and the lead plate can be controlled separately 2. The packaging method fixes the lead plate on the functional surface of the chip, and makes the first electrode on the functional surface of the chip upwardly electrically connected through the built-in wire in the lead plate To the second electrode, so that the formed image sensor packaging structure is directly provided with a conductive lead-out structure (for electrical connection with the external circuit) above the functional surface, without having to make a back-side lead-out structure, so an ultra-thin image sensor can be produced Packaging structure; 3. The packaging method can reduce the formation of wires, protective layers or insulating layers on the back of the image sensor packaging structure, so the process is simpler and the process cost is reduced. At the same time, the heat dissipation performance of the formed image sensor packaging structure can be improved .

Further, in the image sensor packaging method provided by the present invention, since the lead board can be manufactured separately, and the material of the lead board can be selected in a wide range, the manufacturing process can be selected in a wide range and the process method is flexible.

In the image sensor packaging structure provided by the present invention, each part can be manufactured separately and then packaged together, so the yield rate of each part can be controlled independently, so the reliability of the image sensor packaging structure is high. Since there is no need to form structures such as wires, protective layers, or insulating layers on the back surface, the image sensor packaging structure has good heat dissipation performance. Since there is no need to set the lead-out structure on the back side, but to make the lead-out structure by using structures such as a protective substrate on the original functional surface, the image sensor packaging structure can have an ultra-thin thickness.

The image sensor module forming method provided by the present invention uses the image sensor packaging method provided by the embodiment of the present invention, therefore, the image sensor module forming method has the characteristics of high process yield, simple process and low process cost, and The image sensor module produced by the forming method has a small thickness.

Since the image sensor module provided by the present invention has the image sensor packaging structure provided by the present invention, the image sensor module has high reliability, good heat dissipation performance, and small thickness.

Further, the image sensor module further includes a protective frame, which can prevent dust or moisture from affecting the image sensor packaging structure, and can prevent external force from damaging the image sensor packaging structure.

Description of drawings

1 to 6 are schematic diagrams of an image sensor packaging method according to an embodiment of the present invention;

7 to 9 are schematic diagrams of an image sensor packaging method according to Embodiment 3 of the present invention;

10 to 12 are schematic diagrams of a method for forming an image sensor module according to Embodiment 5 of the present invention;

FIG. 13 is a schematic diagram of an image sensor module according to Embodiment 7 of the present invention.

Detailed ways

In the existing image sensor packaging methods, there are T-type connection and Through silicon via (Through silicon via, TSV) connection for connecting the pad on the functional surface of the image sensor to the back surface.

For the T-shaped connection method, the connection area of the T-shaped connection is very small, and cracks are likely to occur, which may easily cause the problem of poor reliability of the connecting joint, and the T-shaped connection is easily penetrated by moisture, resulting in T-shaped connection. Corrosion occurs at the T-junction, resulting in poor reliability problems such as peeling of the T-shaped junction. This type of packaging often fails to pass reliability tests such as high temperature/high humidity.

For through-silicon via connections, processes such as RIE (Reactive Ion Etching), CVD (Chemical Vapor Deposition) and CMP (Chemical Mechanical Planarization) are usually required, so the cost is high. Moreover, in the plasma dry etching process, the entire image sensor is exposed to the bombardment of ions, which easily causes the failure of the image sensor. In the TSV connection method, there is only a very thin insulating layer between the substrate and the copper structure, so that the TSV interconnection forms a high capacitance, sometimes even exceeding the capacitance value of the standard lead interconnection method, and the same This causes the image sensor to have a problem of poor reliability.

In addition, both of the above two methods fabricate the back-side lead-out structure on the back of the image sensor. Therefore, the image sensor packaging structure obtained by the above-mentioned method has the problems of large thickness and poor heat dissipation performance.

The invention provides an image sensor packaging method and structure, an image sensor module and a forming method. The image sensor packaging method provides a wafer and a lead plate respectively, the wafer has a plurality of image sensor units, the image sensor units have dicing lines between each other, and the functional surface of each of the image sensor units has a photosensitive area and a non-conductive area. A photosensitive area, with pixel units on the photosensitive area, and a first electrode on the non-photosensitive area. The lead plate has a frame plate and built-in wires penetrating through the thickness of the frame plate, and the frame plate has an opening. Then the lead plate is fixed on the functional surface of the image sensor unit, the opening exposes the photosensitive area, one end of the built-in wire is electrically connected to the first electrode, and finally cut along the cutting line the wafer and the lead plate. Since the chip and the lead plate are manufactured separately, the yields of the chip and the lead plate can be controlled separately, thereby improving the yield rate of the packaging process. Moreover, the lead plate is arranged on the functional surface of the wafer to form an image sensor packaging structure with a conductive connection structure above the functional surface, and the back of the wafer does not need to be processed, so the thickness of the image sensor packaging structure is small, and since there is no The structure is added, so the image sensor packaging structure has good heat dissipation performance.

In order to make the above objects, features and advantages of the present invention more comprehensible, specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

It should be noted that, due to the high symmetry of the structures involved in the drawings of this specification, in order to show more clearly, when marking, the same structure in the same figure is usually only marked once.

Embodiment 1 of the present invention provides an image sensor packaging method, please refer to FIG. 1 to FIG. 6 in conjunction.

Please refer to FIG. 1, first provide the wafer. The wafer includes a plurality of image sensor units 111 , for the convenience of display, only two image sensor units 111 are shown in FIG. 1 . Each image sensor unit 111 can form an image sensor packaging structure after undergoing a packaging process.

The functional surface of the image sensor unit 111 is provided with a pixel unit 111a (the functional surface of the image sensor unit 111 belongs to a part of the functional surface of the entire wafer), and the area where the pixel unit 111a is located is the photosensitive area, except for the photosensitive area on the functional surface of the image sensor unit 111. The other regions are non-photosensitive regions, and the first electrodes 111b are provided in the non-photosensitive regions.

There are cutting lines 110 between the image sensor units 111 , and cutting is performed along the cutting lines 110 during the subsequent cutting step.

Please refer to FIG. 2 . FIG. 2 is a cross-sectional view of the structure shown in FIG. 1 along line A-A. It can be seen from FIG. 2 that the wafer further includes a semiconductor substrate 112 on which the pixel unit 111 a and the first electrode 111 b are formed. Semiconductor devices such as photodiodes and MOS transistors may be formed inside the semiconductor substrate 112 . The semiconductor substrate 112 also includes a conductive interconnection structure (not shown) electrically connecting the pixel unit 111a to the first electrode 111b, so as to ensure that the pixel unit 111a can be electrically connected to an external circuit through the first electrode 111b.

Refer to Figure 3 for a lead plate. The lead plate includes a frame plate 121 having an opening 122 . In fact, the frame plate 121 includes a plurality of openings 122, and the openings 122 are used to subsequently expose the pixel unit 111a (please refer to FIG. 1 and FIG. 2). In this embodiment, only two openings 122 are shown in FIG. 3 for convenience of display. (That is, Figure 3 is a partial view of the lead plate).

The frame plate 121 in this embodiment has a first upper surface 121a and a second upper surface 121b. The first upper surface 121 a surrounds the second upper surface 121 b , and the second upper surface 121 b surrounds the opening 122 . The opening 122 runs through the frame plate 121 . In the section shown in FIG. 3 , the opening 122 is rectangular, and the second upper surface 121 b is a square ring surrounding the opening 122 .

Glue points 101 are also arranged on the second upper surface 121b, and each glue point 101 is distributed on the second upper surface 121b with a certain distance therebetween. The glue dots 101 are used for subsequently fixing the transparent substrate 124 (please refer to FIG. 5 ) on the second upper surface 121 b of the frame plate 121 .

Please refer to FIG. 4. FIG. 4 is a cross-sectional view of the lead plate shown in FIG. 3 along the line B-B. As can be seen from FIG. The wire 123 runs through the frame plate 121 . It can also be seen from FIG. 4 that the second upper surface 121b is lower than the first upper surface 121a. Since the frame plate 121 has a first upper surface 121a and a second upper surface 121b, the frame plate 121 is stepped in the cut plane shown in FIG. 4 .

In the lead plate, the material of the frame plate 121 can be ceramic material, organic material, glass material or silicon material, and the lead plate can be made by the manufacturing method of the printed circuit board, to form in the frame plate 121 the built-in through frame plate 121 thickness. Wire 123. The material of the built-in wire 123 may be metals such as copper, nickel, aluminum or gold and alloys formed by any combination thereof. In this embodiment, the built-in wire 123 may be a three-layer structure, for example, composed of three layers of copper, nickel and gold.

Please refer to FIG. 5, firstly, a transparent substrate 124 is provided on the frame plate 121, and the transparent substrate 124 covers the opening 122 (please refer to FIG. 3 and 4) bonding. Then the lead board is fixed on the functional surface of the wafer, and the transparent substrate 124 is located above the pixel unit 111a, so that light can pass through the transparent substrate 124 and irradiate on the pixel unit 110a, and at the same time, one end of the built-in wire 123 is electrically connected to the first There is an electrical connection relationship between the electrode 111b, that is, the built-in wire 123 and the pixel unit 110a.

In this embodiment, ultrasonic welding, reflow soldering or conductive adhesive can be used to electrically connect one end of the built-in wire 123 to the first electrode 111b, and the above method can simultaneously fix the frame plate 121 on the image sensor unit 111 (please refer to FIG. 1 ) on the non-photosensitive area, that is, the lead plate is fixed on the functional surface of the chip.

In this embodiment, the upper surface of the transparent substrate 124 is set slightly lower than the first upper surface 121a, so that the frame plate 121 can protect the transparent substrate 124 more comprehensively, so that the transparent substrate 124 is less likely to be impacted.

Although not shown in FIG. 5, after the transparent substrate 124 is fixed on the second upper surface 121b by the glue points 101, there are still gaps (not shown) between the second upper surface 121b of each glue point 101, and the transparent substrate 124 and the second upper surface 121b There are gaps (not marked) between the side walls (not marked) of the frame plate 121, and these gaps communicate with the gaps, so that the chamber (not marked) surrounded by the semiconductor substrate 112, the frame plate 121 and the transparent substrate 124 is connected to the The external communication can finally prevent the transparent substrate 124 from cracking due to the difference in air pressure on the upper surface and the lower surface.

Although not shown in FIG. 5 , in this embodiment, an optical coating (not shown) may be provided on at least one of the upper surface and the lower surface of the transparent substrate 124, and the optical coating may be an infrared cut (IR-cut) film Or an anti-reflective film (anti-reflect, AR) or a laminate of an infrared cut-off film and an anti-reflective film. The infrared cut-off film can allow visible light to pass through the transparent substrate 124 and cut off or reflect infrared light, so that the pixel unit 111 a will not be affected by unnecessary infrared rays. The anti-reflection film can reduce reflected light, thereby increasing the light transmission amount of the transparent substrate 124 .

Please continue to refer to FIG. 5 , after the chip and the lead plate are fixed together, continue to form the second electrode 102 on the first upper surface 121 a of the frame plate 121 in FIG. 4 . In this embodiment, the second electrode 102 may be a bump (Bump) or a lead, so the second electrode 102 may be formed by a reflow soldering process or a bumping process. The material of the second electrode 102 may be metals such as copper, nickel, aluminum or gold and alloys composed of any combination thereof. The second electrode 102 is used for subsequent electrical connection with a flexible printed circuit board or a printed circuit board.

Please refer to FIG. 6, the structure after cutting the chip and the lead plate along the dicing road 110 (please refer to FIG. 1), since the dotted line C-C shown in FIG. 5 corresponds to the dicing road 110 shown in FIG. The dicing of the wafer by the road 110 (please refer to FIG. 1 ) is dicing along the C-C dotted line shown in FIG. 5 , and the image sensor package structure is formed after dicing, as shown in FIG. 6 . The cutting step can be cut with a mechanical cutter head or laser cut.

It should be noted that, in the image sensor package structure formed in this embodiment, the blank area of the first upper surface 121a (please refer to FIG. 3 and FIG. 4 ) of the frame plate 121 can be used for setting electrical components, such as capacitive components or resistors. In this way, the space on the upper surface of the frame plate 121 can be fully utilized, and the electrical components that originally need to be fabricated on the flexible printed circuit board or the printed circuit board are fabricated on the first upper surface 121a, so that the subsequent connection with the image sensor package structure The flexible printed circuit board or printed circuit board has a simpler structure.

In the image sensor packaging method provided in this embodiment, the chip and the lead board are provided separately first, and then they are fixed together, so the chip and the lead board can be controlled separately, and then the yield of the chip and the lead board can be controlled separately, Ultimately, the yield rate of the entire process can be improved, which is suitable for large-scale production.

In the image sensor packaging method provided in this embodiment, the lead plate is fixed on the functional surface of the image sensor unit 111, and the first electrode 111b on the functional surface of the image sensor unit 111 is electrically connected upward to the The second electrode 102, so that the formed image sensor packaging structure is directly provided with a conductive lead-out structure (for electrical connection with the external circuit) above the functional surface of the image sensor unit 111, and it is not necessary to make a back-side lead-out structure, so it can be made Ultra-thin image sensor packaging structure.

The image sensor packaging method provided in this embodiment does not need to form structures such as wires, protective layers, or insulating layers on the back of the image sensor unit 111, so that the process is simpler, and the process cost can be reduced. At the same time, the formed image sensor packaging structure can be improved. cooling performance.

In addition, compared with the existing image sensor packaging method, the packaging method does not need to use expensive processes such as RIE, CVD or CMP, so the process cost is further reduced. At the same time, the material selection range of the lead plate is wide, and the manufacturing process selection range is wide, so the process method is flexible.

Embodiment 2 of the present invention also provides an image sensor packaging structure, please refer to FIG. 6, the image sensor packaging structure can be obtained by the image sensor packaging method described in Embodiment 1, therefore, the structure of each part of the image sensor packaging structure and properties can refer to the relevant content of Embodiment 1, and will not be described here. The image sensor packaging structure obtained in this embodiment has the following advantages:

1. Each part can be manufactured separately and packaged together, so the yield rate of each part can be controlled separately, so the formed image sensor packaging structure has high reliability;

2. There is no need to form structures such as wires, protective layers or insulating layers on the back, so the image sensor packaging structure has good heat dissipation performance;

3. Using the original functional surface of the chip, it is necessary to set up a protective substrate and other structures. On the one hand, the thickness of the functional surface of the chip is not increased, and on the other hand, the thickness of the back side does not need to be increased. Therefore, the image sensor packaging structure can have an ultra-thin thickness. The thickness range can reach 200um-350um, while the thickness of the image sensor packaging structure manufactured by the existing method is usually above 500um.

Embodiment 3 of the present invention provides another image sensor packaging method, please refer to FIG. 7 to FIG. 9 .

Please refer to FIG. 7 , the present embodiment provides a lead plate, the lead plate has a frame plate 221 , the frame plate 221 has an upper surface 221 and an opening 222 , and the opening 222 penetrates through the frame plate 211 . The lead plate also has built-in wires 223 , and the built-in wires 223 also pass through the frame plate 221 .

Please refer to FIG. 8, the present embodiment provides a wafer, the wafer includes a pixel unit 211a, a first electrode 211b and a semiconductor substrate 212, the structure and properties of the wafer are the same as those of the wafer in the first embodiment, and can be used in the first embodiment related content.

Please continue to refer to FIG. 8 . First, a transparent substrate 224 is provided on the frame plate 221 . The transparent substrate 224 covers the opening 222 in FIG. Then, the lead plate and the chip are fixed together, and the built-in wire 223 is electrically connected to the first electrode 211b. For the specific method, please refer to the relevant content in the first embodiment.

Please continue to refer to FIG. 8, after the lead plate and the chip are fixed together, the second electrode 202 is formed on the upper surface 221a of the frame plate 221 shown in FIG. above the non-photosensitive area. The second electrode 202 is located outside the transparent substrate 224 , and the second electrode 202 a may be a conductive solder ball, and further may be a metal solder ball (solder), which may be made of metal such as copper or tin. The manufacturing process of the second electrode 202 may be printing or ball planting.

In this embodiment, the top of the second electrode 202 is especially made to be flush with the surface of the transparent substrate 224 , which helps the transparent substrate 224 to be electrically connected to subsequent external circuits. For this reason, the transparent substrate 224 can be set to be relatively thin, so that the top of the second electrode 202 is easily flush with the upper surface of the transparent substrate 224 . Likewise, at least one of the upper surface or the lower surface of the transparent substrate 224 may be provided with an optical coating (not shown) such as an infrared cut-off film or an anti-reflection film, and reference may be made to related content in Embodiment 1.

Please refer to FIG. 8 and FIG. 9 together, and cut the structure where the lead plate and the chip are fixed together along the D-D dotted line in FIG. 8 to obtain the image sensor package structure shown in FIG. 9 . This step also cuts the structure in which the chip and the lead plate are fixed together along a dicing line (not shown), and finally obtains an image sensor package structure.

Compared with Embodiment 1, in the image sensor packaging method provided in Embodiment 3, the frame plate 221 has only one upper surface 221a, that is, there is no stepped section similar to the frame plate 121, so the manufacturing process of the lead plate is more efficient. Simpler and cheaper to make.

Embodiment 4 of the present invention provides an image sensor packaging structure, as shown in FIG. 9 . The image sensor packaging structure can be obtained by the image sensor packaging method described in the third embodiment. Therefore, the structure and properties of each part in the image sensor packaging structure can refer to the relevant content of the third embodiment, and will not be described here.

In the image sensor packaging structure obtained in this embodiment, the frame plate 221 has only one flat upper surface (on which the glue dots 201 and the second electrodes 202 are formed), unlike the frame in the first embodiment. The plate 121 has a first upper surface 121a and a second upper surface 121b. Therefore, compared with the frame plate 121, the frame plate 221 can be made thinner, and the transparent substrate 224 can also be set thinner in this embodiment, so the thickness of the image sensor package structure obtained is thinner, and the entire image sensor package structure Heat dissipation is better.

Embodiment 5 of the present invention provides a method for forming an image sensor module, please refer to FIGS. 10 to 12 . Embodiment 5 Firstly, an image sensor packaging structure is formed by using the image sensor packaging method provided in Embodiment 1. For the specific formation process of the image sensor packaging structure, please refer to FIG. 1 to FIG. 6 and related content in Embodiment 1. Let me repeat. It should be noted that, in the methods for forming the image sensor module provided in other embodiments, the image sensor packaging method provided in the third embodiment may also be used to form the image sensor packaging structure. At this time, the relevant content of the third embodiment may be referred to. I won't repeat them here.

Referring to FIG. 10 , the flexible printed circuit board 130 is electrically connected to the second electrode 102 in the image sensor packaging structure, so that the built-in wire 123 is electrically connected to the flexible printed circuit board 130 . Wherein, the wire 131 in the flexible printed circuit board 130 is in conductive contact with the second electrode 102 to realize electrical connection. Conductive glue can be used to press and bond between the flexible printed circuit board 130 and the second electrode 102 so that the wire 131 is in conductive contact with the second electrode 102 and the flexible printed circuit board 130 is fixed on the image sensor packaging structure.

FIG. 11 is a top view of the cross-sectional structure shown in FIG. 10 , that is, FIG. 10 is a cross-sectional view of the structure shown in FIG. 11 taken along line E-E. It can also be seen from FIG. 11 that the flexible printed circuit board 130 also includes a flexible substrate 132 and a copper foil 133 , and the flexible substrate 132 carries the copper foil 133 as a wire. It should be noted that the transparent substrate 124 (please refer to FIG. 10 ) is not shown in FIG. 11 , but the pixel unit 111 a is shown.

Referring to FIG. 12 , a protective substrate 140 is provided on the side of the image sensor package structure. The protective substrate 140 can protect the image sensor package structure from dust or moisture, and prevent the image sensor package structure from being damaged by external forces.

Please continue to refer to FIG. 12 , the lens module 150 is further disposed on the flexible printed circuit board 130 . The lens module 150 includes a frame 151 and a lens 152 . The mirror frame 151 is used to fix the lens 152 , and the lens 152 is used to collect the light onto the pixel unit 111a of the image sensor packaging structure, so that the angle range of the light received by the pixel unit 111a is increased.

After the above steps are completed, the image sensor module is formed in this embodiment. The image sensor module forming method provided in this embodiment uses the image sensor forming method provided in the embodiment of the present invention. Therefore, the image sensor module The forming method can be applied to large-scale production, and has the characteristics of high process yield, flexible process method, simple process and low process cost. At the same time, the image sensor packaging structure formed by the image sensor forming method provided by the embodiment of the present invention The thickness is small, so the finally produced image sensor module has a small thickness.

Embodiment 6 of the present invention provides an image sensor module, please refer to FIG. 12 . The image sensor module can be obtained by the image sensor module forming method provided in the fifth embodiment. Therefore, the structure and properties of each part of the image sensor module can refer to the relevant content of the fifth embodiment, and will not be repeated here.

Since the image sensor module provided in this embodiment has an image sensor packaging structure, the formed image sensor module has high reliability, good heat dissipation performance, and small thickness.

Embodiment 7 of the present invention provides another image sensor module, please refer to FIG. 13 . The difference between the image sensor module provided in this embodiment and the image sensor module provided in Embodiment 6 is that, in the image sensor module of this embodiment, the lens module 160 has a plurality of The lenses 162 cooperate with each other, so that the angle range of the light that the image sensor module can receive is larger, so the image sensor module can sense a larger spatial range.

Although the present invention is disclosed above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention, so the protection scope of the present invention should be based on the scope defined in the claims.

Claims (18)

1. An image sensor packaging method, characterized in that, comprising: A wafer is provided, the wafer has a plurality of image sensor units, the image sensor units have dicing lines between each other, the functional surface of each of the image sensor units has a photosensitive area and a non-photosensitive area, and the photosensitive area has pixels A unit, with a first electrode on the non-photosensitive area; providing a lead plate having a frame plate and built-in wires penetrating through the thickness of the frame plate, the frame plate having an opening; Fixing the lead plate on the functional surface of the image sensor unit, the opening exposes the photosensitive area, and one end of the built-in wire is electrically connected to the first electrode; dicing the wafer and the lead plate along the dicing line; Before fixing the lead plate on the functional surface of the image sensor unit, a transparent substrate covering the opening is provided on the frame plate; After the lead plate is fixed on the functional surface of the image sensor unit, it also includes: setting a second electrode on the upper surface of the frame plate, and the other end of the built-in wire is electrically connected to the second electrode; The frame plate includes a first upper surface and a second upper surface, the first upper surface is higher than the second upper surface; the second electrode is located on the first upper surface; the transparent substrate is fixed on the on the second upper surface, and the upper surface of the transparent substrate is lower than the first upper surface. 2 . The image sensor packaging method according to claim 1 , wherein the second electrode is a conductive solder ball whose top is flush with the upper surface of the transparent substrate. 3 . 3. The image sensor packaging method according to claim 1, further comprising: before the transparent substrate covering the opening is arranged on the frame plate, at least on the upper surface and the lower surface of the transparent substrate One of the surfaces is provided with an optical coating. 4. The image sensor packaging method according to claim 3, wherein the optical coating comprises an infrared cut-off film or an anti-reflection film. 5 . The image sensor packaging method according to claim 1 , wherein the built-in wire is electrically connected to the first electrode by means of ultrasonic welding, reflow soldering or conductive adhesive bonding. 6 . The image sensor packaging method according to claim 1 , wherein at least one of a capacitive element and a resistive element is disposed on the upper surface of the frame plate. 7. The image sensor packaging method according to claim 1, wherein the material of the frame plate comprises ceramic material, organic material, glass material or silicon material. 8. A method for forming an image sensor module, comprising: Forming an image sensor packaging structure with the image sensor packaging method according to any one of claims 1 to 7; The built-in wires of the image sensor packaging structure are electrically connected to a printed circuit board; A lens module is arranged on the printed circuit board to form an image sensor module. 9 . The method for forming an image sensor module according to claim 8 , further comprising: forming a protective frame on a side of the image sensor packaging structure before electrically connecting the printed circuit board to the built-in wire. 10. An image sensor packaging structure, characterized in that it comprises: Image sensor, the image sensor is cut and separated from the image sensor unit on the wafer, the functional surface of the image sensor has a photosensitive area and a non-photosensitive area, the photosensitive area has pixel units, and the non-photosensitive area has first electrode; A lead plate fixedly connected with the image sensor, the lead plate has a frame plate and a built-in wire that runs through the thickness of the frame plate, the frame plate has an opening, the opening exposes the photosensitive area, and the built-in wire one end of which is electrically connected to the first electrode; It also includes: a transparent substrate, the transparent substrate is fixed on the frame plate and covers the opening; The upper surface of the frame plate is provided with a second electrode, and the other end of the built-in wire is electrically connected to the second electrode; The frame plate includes a first upper surface and a second upper surface, the first upper surface is higher than the second upper surface; the second electrode is located on the first upper surface; the transparent substrate is fixed on the on the second upper surface, and the upper surface of the transparent substrate is lower than the first upper surface. 11 . The image sensor package structure according to claim 10 , wherein the second electrode is a conductive solder ball whose top is flush with the upper surface of the transparent substrate. 12. The image sensor package structure according to claim 10, wherein at least one of the upper surface and the lower surface of the transparent substrate has an optical coating. 13. The image sensor package structure according to claim 12, wherein the optical coating comprises an infrared cut-off film or an anti-reflection film. 14 . The image sensor package structure according to claim 10 , wherein the built-in wire is electrically connected to the first electrode by welding or conductive adhesive. 15. The image sensor package structure according to claim 10, wherein the frame plate is provided with at least one of a capacitive element and a resistive element. 16. The image sensor package structure according to claim 10, wherein the material of the frame plate comprises ceramic material, organic material, glass material or silicon material. 17. An image sensor module, comprising: The image sensor packaging structure according to any one of claims 10 to 16; a printed circuit board electrically connected to the built-in wires of the image sensor packaging structure; The lens module is arranged on the printed circuit board. 18. The image sensor module according to claim 17, further comprising a protective frame fixed on a side of the image sensor packaging structure.