CN107663631A - The manufacture method of target material assembly - Google Patents
The manufacture method of target material assembly Download PDFInfo
- Publication number
- CN107663631A CN107663631A CN201610618829.7A CN201610618829A CN107663631A CN 107663631 A CN107663631 A CN 107663631A CN 201610618829 A CN201610618829 A CN 201610618829A CN 107663631 A CN107663631 A CN 107663631A
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- Prior art keywords
- target material
- material assembly
- manufacture method
- jacket
- tungsten titanium
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- 238000000034 method Methods 0.000 title claims abstract description 114
- 239000013077 target material Substances 0.000 title claims abstract description 98
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 45
- 229910000679 solder Inorganic materials 0.000 claims abstract description 75
- 239000010949 copper Substances 0.000 claims abstract description 64
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 61
- 229910052802 copper Inorganic materials 0.000 claims abstract description 61
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims abstract description 61
- 230000008569 process Effects 0.000 claims abstract description 57
- 238000003466 welding Methods 0.000 claims abstract description 27
- 230000003068 static effect Effects 0.000 claims abstract description 25
- 238000009924 canning Methods 0.000 claims description 49
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 24
- 238000004140 cleaning Methods 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 17
- 238000009413 insulation Methods 0.000 claims description 15
- 238000003825 pressing Methods 0.000 claims description 15
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 12
- 229910045601 alloy Inorganic materials 0.000 claims description 12
- 239000000956 alloy Substances 0.000 claims description 12
- 229910052786 argon Inorganic materials 0.000 claims description 12
- 238000007872 degassing Methods 0.000 claims description 12
- 238000001035 drying Methods 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 6
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 230000000694 effects Effects 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 238000009835 boiling Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 239000002173 cutting fluid Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000005477 sputtering target Methods 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000006353 environmental stress Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000002525 ultrasonication Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
The present invention provides a kind of manufacture method of target material assembly, including：Tungsten titanium target base and copper backboard are provided, the surface to be welded of the tungsten titanium target base is the first solder side, and the surface to be welded of the copper backboard is the second solder side；First solder side and the second solder side are oppositely arranged and be bonded, forms initial target material assembly；Heat and other static pressuring processes are carried out to the initial target material assembly, obtain target material assembly.The present invention to the initial target material assembly by carrying out heat and other static pressuring processes, it is possible to achieve the tungsten titanium target base and the large-area welding of copper backboard；So as to improve the bond strength of the tungsten titanium target base and copper backboard, the solder bond rate for the target material assembly to be formed is set to reach more than 99%, weld strength can be up to more than 50MPa, and then can avoid the target material assembly that sealing-off occurs in use.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly to a kind of manufacture method of target material assembly.
Background technology
Sputtering technology is one of conventional process of field of semiconductor manufacture, with growing, the sputtering target of sputtering technology
Material serves more and more important effect in sputtering technology, the quality of sputtering target material directly influenced after sputtering into film quality
Amount.
In sputtering target material manufacturing field, target material assembly is by welding phase by meeting the target blankss of sputtering performance, with target blankss
With reference to backboard form.Wherein, tungsten titanium target base be one kind than more typical alloys target base, tungsten-titanium alloy have low-resistance coefficient,
Good heat endurance and inoxidizability, in the prior art, typically use tungsten titanium target base and the back of the body of aluminium alloy or copper alloy
Plate forms the target material assembly.
But the yield of the target material assembly of prior art formation has much room for improvement.
The content of the invention
It is of the invention to solve the problems, such as to be to provide a kind of manufacture method of target material assembly, improve the yield of target material assembly.
To solve the above problems, the present invention provides a kind of manufacture method of target material assembly, including：Tungsten titanium target base and copper are provided
Backboard, the surface to be welded of the tungsten titanium target base is the first solder side, and the surface to be welded of the copper backboard is the second solder side；By institute
State the first solder side and the second solder side is oppositely arranged and is bonded, form initial target material assembly；The initial target material assembly is entered
Row heat and other static pressuring processes, obtain target material assembly.
Optionally, the material of the tungsten titanium target base is WTi alloys, and W and Ti gross mass degree are more than or equal to
The ratio of 99.995%, W and Ti mass percentage content is 8.5 to 9.5.
Optionally, the material of the copper backboard is Cu or CuCr alloys.
Optionally, the step of heat and other static pressuring processes include：The initial target material assembly is loaded into jacket and to described
Jacket is de-gassed processing to form vacuum canning；The vacuum canning is positioned in high temperature insostatic pressing (HIP) stove；It is quiet to the heat etc.
Stove is pressed to carry out increasing temperature and pressure, until reaching technological temperature and process pressure；Protected under the technological temperature and process pressure
Warm pressurize.
Optionally, increasing temperature and pressure is carried out to the high temperature insostatic pressing (HIP) stove, until the step of reaching technological temperature and process pressure
In, technological temperature is 600 DEG C to 800 DEG C, and process pressure is 120MPa to 180MPa；Under the technological temperature and process pressure
In the step of carrying out heat-insulation pressure keeping, the heat-insulation pressure keeping time under the technological temperature and process pressure is 4 hours to 6 hours.
Optionally, the step of being de-gassed processing to the jacket includes：The initial target material assembly is positioned over jacket
Afterwards, it is de-gassed processing to the jacket, the vacuum after degassing process in the vacuum canning is at least 2E-3Pa；To described
High temperature insostatic pressing (HIP) stove was carried out in the step of increasing temperature and pressure and heat-insulation pressure keeping, and the vacuum canning keeps sealing state.
Optionally, the technological temperature of the degassing process is 350 DEG C to 500 DEG C.
Optionally, after the vacuum in the vacuum canning reaches 2E-3Pa, the manufacture method also includes：Described de-
Under the technological temperature of gas disposal, isothermal holding is carried out to the vacuum canning.
Optionally, the time for isothermal holding being carried out to the vacuum canning is 3 hours to 4 hours.
Optionally, after the initial target material assembly being loaded into jacket, before being de-gassed processing to the jacket, the system
Making method also includes：The jacket is sealed by the way of argon arc welding；A deaeration pipe is drawn in the jacket；In the degassing
In the step of processing, the jacket is de-gassed by the deaeration pipe.
Optionally, after sealing the jacket by the way of the argon arc welding, before being de-gassed processing to the jacket, institute
Stating manufacture method also includes：The seal of the jacket after argon arc welding is detected using helium leak method.
Optionally, after completing the heat and other static pressuring processes, the manufacture method also includes：The vacuum canning is removed, with
Obtain the target material assembly.
Optionally, after completing the heat and other static pressuring processes, before removing the vacuum canning, the manufacture method also includes：
Pressure cooling is carried out to the vacuum canning.
Optionally, there is provided after the tungsten titanium target base and copper backboard, formed before the initial target material assembly, the manufacturer
Method also includes：Ultrasonic wave cleaning treatment is carried out to the tungsten titanium target base and copper backboard；It is right after completing the ultrasonic wave cleaning treatment
Processing is dried in the tungsten titanium target base and copper backboard.
Optionally, the step of carrying out ultrasonic wave cleaning treatment to the tungsten titanium target base and copper backboard includes：By the tungsten titanium
Target blankss and copper backboard are placed in progress ultrasonic wave cleaning treatment in aqueous isopropanol, and the time of ultrasonic wave cleaning treatment is 3 minutes to 7
Minute.
Optionally, the parameter of the drying process includes：Drying temperature is 65 DEG C to 75 DEG C, and drying time is 0.9 hour
To 1.1 hours.
Optionally, there is provided in the step of tungsten titanium target base and copper backboard, there is a groove in the copper backboard, the groove
Lower surface is second solder side；In the step of first solder side and the second solder side are oppositely arranged and are bonded,
The tungsten titanium target base is embedded in the groove.
Compared with prior art, technical scheme has advantages below：
The present invention to the initial target material assembly by carrying out heat and other static pressuring processes, it is possible to achieve the tungsten titanium target base and copper
The large-area welding of backboard.By methods described, the bond strength of the tungsten titanium target base and copper backboard can be improved, makes what is formed
The solder bond rate of target material assembly reaches more than 99%, and weld strength can be up to more than 50MPa, so as to avoid the target
Sealing-off occurs in use for material component；And also have the advantages that welding procedure is simple, stable processing technique is high.
In alternative, there is provided after the tungsten titanium target base and copper backboard, formed before the initial target material assembly, by described in
Tungsten titanium target base and copper backboard are placed in progress ultrasonic wave cleaning treatment in aqueous isopropanol, to remove surface and oil contaminant and impurity；Then
Processing is dried to the tungsten titanium target base and copper backboard；So as to provide good interfacial state for follow-up heat and other static pressuring processes, have
Beneficial to the bond strength for improving the tungsten titanium target base and copper backboard.
Brief description of the drawings
Fig. 1 is the schematic flow sheet of the embodiment of preparation method one of target material assembly of the present invention；
Fig. 2 to Fig. 8 is the structural representation of each step in embodiment illustrated in fig. 1.
Embodiment
From background technology, the yield of prior art target material assembly has much room for improvement.Its reason is analyzed to be：
Soldering processes mainly are used to realize the welding of WTi target blankss and Cu backboards to form target material assembly at present.The pricker
Welding uses fusing point than target blankss and the low-melting solder of backboard, such as：Indium or tin.In brazing process, low
The target blankss and backboard are heated simultaneously at a temperature of the target blankss and backboard fusing point, higher than solder melt point, after solder fusing,
The surface to be welded of the target blankss and the surface to be welded of backboard is set to be oppositely arranged and be bonded, solder and target blankss, the counterdiffusion of backboard phase are real
Now firmly connection.But during the use of target material assembly, after sputtering power increases to a certain extent, the target group
The temperature that part is born is higher, the problem of causing the target and backboard to come off because of solder re-melting easily occurs, so as to cause
The yield of target material assembly declines.
In order to solve the above problems, the present invention provides a kind of manufacture method of target material assembly, including：There is provided tungsten titanium target base and
Copper backboard, the surface to be welded of the tungsten titanium target base is the first solder side, and the surface to be welded of the copper backboard is the second solder side；Will
First solder side and the second solder side are oppositely arranged and are bonded, and form initial target material assembly；To the initial target material assembly
Heat and other static pressuring processes are carried out, obtain target material assembly.
The present invention to the initial target material assembly by carrying out heat and other static pressuring processes, it is possible to achieve the tungsten titanium target base and copper
The large-area welding of backboard.By methods described, the bond strength of the tungsten titanium target base and copper backboard can be improved, makes what is formed
The solder bond rate of target material assembly reaches more than 99%, and weld strength can be up to more than 50MPa, so as to avoid the target
Sealing-off occurs in use for material component；And also have the advantages that welding procedure is simple, stable processing technique is high.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
It refer to Fig. 1, Fig. 1 is the schematic flow sheet of the embodiment of preparation method one of target material assembly of the present invention, the present embodiment
The preparation method of target material assembly includes following basic step：
Step S1：There is provided tungsten titanium target base and copper backboard, the surface to be welded of the tungsten titanium target base is the first solder side, the copper
The surface to be welded of backboard is the second solder side；
Step S2：First solder side is oppositely arranged and is bonded with second solder side, forms initial target group
Part；
Step S3：Heat and other static pressuring processes are carried out to the initial target material assembly, obtain target material assembly.
In order to which the preparation method of the target material assembly of the embodiment of the present invention is better described, below in conjunction with referring to figs. 2 to figure
8, the specific embodiment of the present invention is further described.
With reference to referring to figs. 2 and 3 execution step S1, there is provided tungsten titanium target base 100 (as shown in Figure 2) and copper backboard 200 are (such as
Shown in Fig. 3), the surface to be welded of the tungsten titanium target base 100 is the first solder side 101 (as shown in Figure 2), the copper backboard 200
Surface to be welded is the second solder side 201 (as shown in Figure 3).
The shape of cross section of the tungsten titanium target base 100 can require rounded, rectangle, ring according to application environment and sputtering
Shape, cone or other any regular shapes or irregular shape.In the present embodiment, the cross section shape of the tungsten titanium target base 100
Shape is circle.
In the present embodiment, the material of the tungsten titanium target base 100 is WTi alloys, and WTi alloy rigidities are big, has low resistance system
Number, good heat endurance and inoxidizability.Specifically, in the WTi alloys, W and Ti gross mass degree are more than
Or the ratio of the mass percentage content equal to 99.995%, W and Ti is 8.5 to 9.5.
The size of the copper backboard 200 is more than the size of the tungsten titanium target base 100.In the present embodiment, the copper backboard 200
Surface include the surface of first area I and around the first area I the surface of second area II, the surface of first area I
Shape, size it is identical with shape, the size of the first solder side 101 of the tungsten titanium target base 100, the surface of first area I
For the second solder side 201, the surface of second area II is the fringe region of the copper backboard 200.
In the present embodiment, the material of the copper backboard 200 is CuCr alloys.CuCr alloys have preferable electric conductivity and led
It is hot, and the intensity of CuCr alloys is higher, after forming target material assembly, during the use of the target material assembly, the copper back of the body
Plate 200 is not susceptible to deform.Specifically, the material of the copper backboard 200 is the CuCr alloys of C18200 models.
In other embodiments, the material of the copper backboard 200 can also be copper.
In the present embodiment, there is a groove 250, the bottom of the groove 250 in the copper backboard 200 of first area I
Surface is second solder side 201, that is to say, that the side wall of second solder side 201 and the copper backboard 200 surrounds institute
State groove 250.
When subsequently first solder side 101 being oppositely arranged and be bonded with second solder side 201, the groove
250 are used to carry out the tungsten titanium target base 100 spacing and fix, and the tungsten titanium target base 100 is embedded in the groove 250, have
Beneficial to the alignment precision and follow-up bond strength for improving first solder side 101 and second solder side 201.
It should be noted that the tungsten titanium target base 100 and copper backboard 200 are formed by carrying out machining to raw material,
To form the tungsten titanium target base 100 and copper backboard 200 that meet layout design demand, such as：Raw material are machined
Afterwards, the tungsten titanium target base 100 and the shape of cross section of copper backboard 200 are circle.
It should also be noted that, after providing the tungsten titanium target base 100 and copper backboard 200, the manufacture method also includes：It is right
The tungsten titanium target base 100 and copper backboard 200 carry out ultrasonic wave cleaning treatment；After completing the ultrasonic wave cleaning treatment, to described
Processing is dried in tungsten titanium target base 100 and copper backboard 200.
Specifically, the step of carrying out ultrasonic wave cleaning treatment includes：The tungsten titanium target base 100 and copper backboard 200 are placed in
Ultrasonic wave cleaning treatment is carried out in aqueous isopropanol.
In the mechanical processing process of the tungsten titanium target base 100 and copper backboard 200 is formed, cutting fluid typically is used to play
Lubrication and the effect of cooling, the cutting fluid is oily solution, and the aqueous isopropanol is organic solution, by by the tungsten
Titanium target base 100 and copper backboard 200 are placed in progress ultrasonic wave cleaning treatment in aqueous isopropanol, can remove first solder side
101 and second solder side 201 surface and oil contaminant (such as cutting fluid etc.) and impurity, so as to improve the He of the first solder side 101
The surface cleanness of second solder side 201, and then improve the bond strength of the solder side 201 of the first solder side 101 and second.
It should be noted that the time of the ultrasonic wave cleaning treatment is unsuitable too short, it is also unsuitable long.If the time
It is too short, remove the DeGrain of surface and oil contaminant and impurity；If the overlong time, process costs and time are easily caused
Waste；Prolonged ultrasonication can make the tungsten titanium target base 100 and copper backboard 200 generate heat simultaneously, and cause described first
The solder side 201 of solder side 101 and second is aoxidized, and the diffusion of surface atom can be hindered by aoxidizing the oxide-film of formation.Therefore, this
In embodiment, the time of the ultrasonic wave cleaning treatment is 3 minutes to 7 minutes.
It should also be noted that, in order to ensure the abundant drying of the tungsten titanium target base 100 and copper backboard 200, and avoid work
Skill cost and waste of time, in the present embodiment, drying temperature is 65 DEG C to 75 DEG C, and drying time is 0.9 hour to 1.1 small
When.
With reference to reference to figure 4 and Fig. 5, step S2 is performed, first solder side 101 and the second solder side 201 are set relatively
Put and be bonded, form initial target material assembly 300 (as shown in Figure 5).
The initial target material assembly 300 provides Process ba- sis to be subsequently formed target material assembly.
Specifically, first solder side 101 is made towards after second solder side 201, the tungsten titanium target base 100 is embedding
Enter into the groove 250, realize being bonded for first solder side 101 and the second solder side 201.
With reference to reference to figure 6 to Fig. 8, step S3 is performed, heat and other static pressuring processes are carried out to the initial target material assembly 300, obtained
Obtain target material assembly 500 (as shown in Figure 8).
Include in the present embodiment, the step of the heat and other static pressuring processes：The initial target material assembly 300 is loaded into jacket
401 and processing is de-gassed to the jacket 401 to form vacuum canning 401'；The vacuum canning 401' is positioned over heat etc.
In static pressure stove；Increasing temperature and pressure is carried out to the high temperature insostatic pressing (HIP) stove, until reaching technological temperature and process pressure；In the process warm
Heat-insulation pressure keeping is carried out under degree and process pressure.
By the degassing process, most gases in the vacuum canning 401' and lower boiling liquid are discharged
(such as steam), vacuum, drying, the technique atmosphere of cleaning are formed in the vacuum canning 401', so as to avoid in follow-up work
During skill, lower boiling liquid forms steam under the influence of high temperature and pollutes first welding in the vacuum canning 401'
The problem of 101 and second solder side 201 of face, and then improve the follow-up weld strength and yield rate for forming target material assembly.
It should be noted that after the initial target material assembly 300 is loaded into jacket 401, the jacket 401 is de-gassed
Before processing, the manufacture method also includes：The jacket 401 is sealed by the way of argon arc welding；Draw in the jacket 401
Go out a deaeration pipe 405；Wherein, in the step of degassing process, the jacket 401 is taken off by the deaeration pipe 405
Gas.
The jacket 401 includes jacket thin-walled 402, jacket lower cover 403 and jacket upper cover plate 404；The jacket 401 is logical
Cross welding fabrication.In order to during follow-up high temperature insostatic pressing (HIP), make the jacket 401 by pressure conduction to the initial target material assembly
300, and in order to improve the anti-pressure ability of the jacket 401, in the present embodiment, the wall thickness of the jacket 401 is 2mm to 4mm.
In the present embodiment, the material of the jacket 401 is 45# steel, and 45# steel is a kind of carbon constructional quality steel, have compared with
Good processing characteristics and mechanical performance.In other embodiments, stainless steel capsule can also be used.
Specifically, first the jacket thin-walled 402 and jacket lower cover 403 are welded by way of argon arc welding,
Then the initial target material assembly 300 is loaded in the jacket 401 of the unwelded jacket upper cover plate 404, covers and covered on jacket
The jacket upper cover plate 404 is soldered to the upper surface of the jacket thin-walled 402 by way of argon arc welding again after plate 404,
So as to seal the jacket 401.
In the present embodiment, the deaeration pipe 405 is connected with vacuum equipment, by equipped with the initial target material assembly 300
Jacket 401 is placed in heating furnace, is opened vacuum equipment and the jacket 401 is de-gassed to form vacuum canning 401'；It is de-
After gas disposal, the vacuum in the vacuum canning 401' is at least 2E-3Pa.
It should be noted that in order that the vacuum in the vacuum canning 401' reaches technological requirement, and can discharge
Lower boiling liquid, in the present embodiment, the temperature of heating furnace is 350 DEG C to 500 DEG C, i.e., the technological temperature of described degassing process is
350 DEG C to 500 DEG C.
It should also be noted that, in the present embodiment, it is described after the vacuum in the vacuum canning 401' reaches 2E-3Pa
Manufacture method also includes：Under the technological temperature of the degassing process, isothermal holding is carried out to the vacuum canning 401'.
During the isothermal holding, lower boiling liquid continuously forms steam, therefore in the during insulation, continuation
Processing is de-gassed to the vacuum canning 401', so as to continue to discharge the gas in the vacuum canning 401', with shape
Into preferable vacuum environment.
It should also be noted that, in order to form preferable vacuum environment, while in order to control process costs and time, this reality
Apply in example, the time that isothermal holding is carried out to the vacuum canning 401' is 3 hours to 4 hours.
In the present embodiment, after completing the degassing process, the vacuum canning 401' is taken out from the heating furnace, after
Continuation of insurance is held and closes the deaeration pipe 405 in the state of its inner vacuum, make the vacuum canning 401' be internally formed one it is closed
Vacuum environment.Moreover, in the step of carrying out increasing temperature and pressure and heat-insulation pressure keeping to the high temperature insostatic pressing (HIP) stove, the vacuum canning
401' keeps sealing state.
It should be noted that after sealing the jacket 401 by the way of the argon arc welding, the jacket 401 is taken off
Before gas disposal, the manufacture method also includes：Using helium leak method detect argon arc welding after the jacket 401 it is closed
Property, to confirm whether the sealing of the jacket 401 is good.
In the present embodiment, after the vacuum canning 401' is positioned over into high temperature insostatic pressing (HIP) stove, lead into the high temperature insostatic pressing (HIP) stove
Enter argon gas, for make the vacuum canning 401' by from each to impartial and comprehensive gas pressure.
It should be noted that in the present embodiment, technological temperature, process pressure and heat-insulation pressure keeping time optimization has been done into
Collocation.
When the technological temperature is too low, because temperature is inadequate, cause the solder side of the first solder side 101 and second
201 surface atom is difficult to obtain enough diffusion activation energies, i.e., the material of the described solder side 201 of first solder side 101 and second
It is difficult to thoroughly be diffused between material, so as to which sealing-off occurs for the target material assembly easily resulted in；When the process warm is spent
Gao Shi, too high technological temperature make the vacuum canning 401' be in rugged environment, easily cause vacuum canning 401''s
Deformation or cracking, may make what is more the vacuum canning 401' melt or make the vacuum canning 401' with it is described initial
Target material assembly 300 reacts, and causes scrapping for target material assembly.Therefore, in the present embodiment, the high temperature insostatic pressing (HIP) stove is risen
Temperature rise pressure, until in the step of reaching technological temperature and process pressure, technological temperature is set as 600 DEG C to 800 DEG C.
When the process pressure is too small, because the power applied on the vacuum canning 401' is not big enough, cause described
It is difficult to thoroughly be diffused between the material of first solder side 101 and the second solder side 201, so as to the target easily resulted in
Sealing-off occurs for material component；When the process pressure is excessive, the initial target material assembly for having completed best welding effect
300, it is difficult to further improve the bond strength of the solder side 201 of the first solder side 101 and second, waste the energy on the contrary, very
To too high environmental stress the vacuum canning 401' may be made to deform upon or ftracture.Therefore, in the present embodiment, to the heat
Isostatic pressed stove carries out increasing temperature and pressure, until in the step of reaching technological temperature and process pressure, sets process pressure as 120MPa
To 180MPa, make the vacuum canning 401' by from each gas pressure to impartial and comprehensive 120MPa to 180MPa
When the heat-insulation pressure keeping time is too short, fallen short of due to applying the stressed time under proper temperature and pressure,
Cause the welding effect of first solder side 101 and the second solder side 201 poor, so as to the target material assembly easily resulted in
Generation sealing-off；When heat-insulation pressure keeping overlong time, the initial target material assembly 300 for having completed best welding effect, it is difficult to
The bond strength of the solder side 201 of the first solder side 101 and second is further improved, the energy is wasted on the contrary, reduces manufacture effect
Rate.Therefore, in the present embodiment, the heat-insulation pressure keeping time under the technological temperature and process pressure is 4 hours to 6 hours.
It should be noted that in the temperature-rise period, programming rate should not be excessively slow, also unsuitable too fast.If heating speed
Spend soon, the furnace temperature of the high temperature insostatic pressing (HIP) stove is not easy to spread, and easily causes the problem of furnace temperature is uneven, inclined so as to produce furnace temperature
Difference, and then influence follow-up welding effect；If programming rate is excessively slow, accordingly, the heating-up time is long, easily causes production effect
Rate declines.Therefore, in the present embodiment, the programming rate is 5 DEG C/H to 10 DEG C/H.
In order to coordinate the heating rate, the rate of rise also needs control in the reasonable scope, so that the technique
Temperature and process pressure almost reach setting value within the same time, so as to improve the stability of the heat and other static pressuring processes and height
Effect property.In the present embodiment, the rate of rise is 10MPa/H to 15MPa/H.
In the present embodiment, vacuum, process pressure, technological temperature and the process time setting of the heat and other static pressuring processes are closed
Reason, the bond strength of first solder side 101 and the second solder side 201 are higher.It is described after completing the heat and other static pressuring processes
The solder bond rate of initial target material assembly 300 can reach more than 99%, and weld strength is up to more than 50MPa, so as to improve
The yield and performance for the target material assembly being subsequently formed.
It should be noted that in the present embodiment, after completing the heat and other static pressuring processes, the manufacture method also includes：It is right
The vacuum canning 401' carries out pressure cooling.
Specifically, after completing the heat and other static pressuring processes, high temperature insostatic pressing (HIP) stove is closed, is made using the method for furnace cooling described
Vacuum canning 401' goes to press and be cooled to 25 DEG C to 200 DEG C of room temperature naturally, and methods described avoids the rapid drawdown of temperature, prevents described
Initial target material assembly 300 occurs deforming or the problem of stress concentration due to rapidly cooling down, to improve the heat and other static pressuring processes
The weld strength of initial target material assembly 300 afterwards.
It should also be noted that, after going pressure to cool down the vacuum canning 401', work is machined by turnery processing etc.
Skill removes the vacuum canning 401' materials on described initial target material assembly 300 (as shown in Figure 7) surface, to obtain target material assembly
500。
The present invention to the initial target material assembly 300 by carrying out heat and other static pressuring processes, it is possible to achieve the tungsten titanium target base
100 (as shown in Figure 4) and the large-area welding of copper backboard 200 (as shown in Figure 4).By methods described, the tungsten can be improved
The bond strength of titanium target base 100 and copper backboard 200, reach the solder bond rate for the target material assembly 500 (as shown in Figure 8) to be formed
More than 99%, weld strength can be up to more than 50MPa, avoid the target material assembly 500 that sealing-off occurs in use；And
Also have the advantages that welding procedure is simple, stable processing technique is high.
Although oneself is disclosed as above the present invention with preferred embodiment, the present invention is not limited to this.Any art technology
Personnel, without departing from the spirit and scope of the present invention, it can make various changes or modifications, therefore protection scope of the present invention should
It is defined when by claim limited range.
Claims (17)
- A kind of 1. manufacture method of target material assembly, it is characterised in that including：Tungsten titanium target base and copper backboard be provided, the surface to be welded of the tungsten titanium target base is the first solder side, the copper backboard it is to be welded Junction is the second solder side；First solder side and the second solder side are oppositely arranged and be bonded, forms initial target material assembly；Heat and other static pressuring processes are carried out to the initial target material assembly, obtain target material assembly.
- 2. the manufacture method of target material assembly as claimed in claim 1, it is characterised in that the material of the tungsten titanium target base is WTi The ratio of mass percentage content of alloy, W and Ti the gross mass degree more than or equal to 99.995%, W and Ti is 8.5 to 9.5.
- 3. the manufacture method of target material assembly as claimed in claim 1, it is characterised in that the material of the copper backboard be Cu or CuCr alloys.
- 4. the manufacture method of target material assembly as claimed in claim 1, it is characterised in that wrap the step of the heat and other static pressuring processes Include：The initial target material assembly is loaded into jacket and processing is de-gassed to the jacket to form vacuum canning；The vacuum canning is positioned in high temperature insostatic pressing (HIP) stove；Increasing temperature and pressure is carried out to the high temperature insostatic pressing (HIP) stove, until reaching technological temperature and process pressure；Heat-insulation pressure keeping is carried out under the technological temperature and process pressure.
- 5. the manufacture method of target material assembly as claimed in claim 4, it is characterised in that heated up to the high temperature insostatic pressing (HIP) stove Boosting, until in the step of reaching technological temperature and process pressure, technological temperature is 600 DEG C to 800 DEG C, and process pressure is 120MPa to 180MPa；In the step of heat-insulation pressure keeping is carried out under the technological temperature and process pressure, under the technological temperature and process pressure The heat-insulation pressure keeping time be 4 hours to 6 hours.
- 6. the manufacture method of target material assembly as claimed in claim 4, it is characterised in that processing is de-gassed to the jacket Step includes：After the initial target material assembly is positioned over into jacket, processing is de-gassed to the jacket, described in after degassing process Vacuum in vacuum canning is at least 2E-3Pa；In the step of carrying out increasing temperature and pressure and heat-insulation pressure keeping to the high temperature insostatic pressing (HIP) stove, the vacuum canning keeps sealing shape State.
- 7. the manufacture method of target material assembly as claimed in claim 6, it is characterised in that the technological temperature of the degassing process is 350 DEG C to 500 DEG C.
- 8. the manufacture method of target material assembly as claimed in claim 6, it is characterised in that the vacuum in the vacuum canning reaches To after 2E-3Pa, the manufacture method also includes：Under the technological temperature of the degassing process, the vacuum canning is protected Temperature processing.
- 9. the manufacture method of target material assembly as claimed in claim 8, it is characterised in that carried out to the vacuum canning at insulation The time of reason is 3 hours to 4 hours.
- 10. the manufacture method of target material assembly as claimed in claim 4, it is characterised in that load the initial target material assembly After jacket, before being de-gassed processing to the jacket, the manufacture method also includes：Institute is sealed by the way of argon arc welding State jacket；A deaeration pipe is drawn in the jacket；In the step of degassing process, the jacket is de-gassed by the deaeration pipe.
- 11. the manufacture method of target material assembly as claimed in claim 10, it is characterised in that sealed by the way of argon arc welding After the jacket, before being de-gassed processing to the jacket, the manufacture method also includes：Argon is detected using helium leak method The seal of the jacket after arc welding.
- 12. the manufacture method of target material assembly as claimed in claim 4, it is characterised in that after completing the heat and other static pressuring processes, The manufacture method also includes：The vacuum canning is removed, to obtain the target material assembly.
- 13. the manufacture method of target material assembly as claimed in claim 12, it is characterised in that complete the heat and other static pressuring processes Afterwards, before removing the vacuum canning, the manufacture method also includes：Pressure cooling is carried out to the vacuum canning.
- 14. the manufacture method of target material assembly as claimed in claim 1, it is characterised in that tungsten titanium target base and the copper back of the body is provided After plate, formed before the initial target material assembly, the manufacture method also includes：The tungsten titanium target base and copper backboard are surpassed Sound wave cleaning treatment；After completing the ultrasonic wave cleaning treatment, processing is dried to the tungsten titanium target base and copper backboard.
- 15. the manufacture method of target material assembly as claimed in claim 14, it is characterised in that to the tungsten titanium target base and copper backboard The step of carrying out ultrasonic wave cleaning treatment includes：The tungsten titanium target base and copper backboard are placed in aqueous isopropanol and carry out ultrasonic wave Cleaning treatment, the time of ultrasonic wave cleaning treatment is 3 minutes to 7 minutes.
- 16. the manufacture method of target material assembly as claimed in claim 14, it is characterised in that the parameter bag of the drying process Include：Drying temperature is 65 DEG C to 75 DEG C, and drying time is 0.9 hour to 1.1 hours.
- 17. the manufacture method of target material assembly as claimed in claim 1, it is characterised in that tungsten titanium target base and copper backboard are provided In step, there is a groove in the copper backboard, the lower surface of the groove is second solder side；In the step of first solder side and the second solder side are oppositely arranged and be bonded, the tungsten titanium target base is embedded in institute State in groove.
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| CN201610618829.7A CN107663631A (en) | 2016-07-29 | 2016-07-29 | The manufacture method of target material assembly |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110923643A (en) * | 2019-12-30 | 2020-03-27 | 福建阿石创新材料股份有限公司 | Binding method of planar target material |
| CN111318657A (en) * | 2018-12-14 | 2020-06-23 | 宁波江丰电子材料股份有限公司 | Method for manufacturing titanium target copper-chromium alloy back plate |
| CN111843161A (en) * | 2020-07-17 | 2020-10-30 | 宁波江丰电子材料股份有限公司 | WTi target and copper back plate welding method |
| CN113106402A (en) * | 2021-04-19 | 2021-07-13 | 宁波江丰电子材料股份有限公司 | Preparation method of integrated large-size planar target |
| CN113579233A (en) * | 2021-07-14 | 2021-11-02 | 先导薄膜材料有限公司 | Tungsten-titanium alloy target material and preparation method and application thereof |
| CN113967781A (en) * | 2021-11-01 | 2022-01-25 | 宁波江丰电子材料股份有限公司 | Sheath structure and welding method |
| CN114888421A (en) * | 2022-04-29 | 2022-08-12 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for silver target blank and copper-chromium alloy back plate |
| WO2022262297A1 (en) * | 2021-06-15 | 2022-12-22 | 上海超群检测科技股份有限公司 | Method for manufacturing x-ray tube anode target material |
| CN115876880A (en) * | 2022-12-16 | 2023-03-31 | 宁波江丰电子材料股份有限公司 | A method of ultrasonic detection of used WTI welding target |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102400004A (en) * | 2011-11-25 | 2012-04-04 | 宁波江丰电子材料有限公司 | Tungsten-titanium alloy target blank and manufacturing method of target material |
| CN102554455A (en) * | 2011-12-31 | 2012-07-11 | 宁波江丰电子材料有限公司 | Diffusion welding method for tungsten-titanium alloy target and copper alloy back plate |
| CN104213083A (en) * | 2013-06-03 | 2014-12-17 | 宁波江丰电子材料股份有限公司 | Manufacture method of tungsten-titanium target material |
| CN104741774A (en) * | 2013-12-31 | 2015-07-01 | 宁波江丰电子材料股份有限公司 | Welding method for tungsten-titanium-copper target material component |
-
2016
- 2016-07-29 CN CN201610618829.7A patent/CN107663631A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102400004A (en) * | 2011-11-25 | 2012-04-04 | 宁波江丰电子材料有限公司 | Tungsten-titanium alloy target blank and manufacturing method of target material |
| CN102554455A (en) * | 2011-12-31 | 2012-07-11 | 宁波江丰电子材料有限公司 | Diffusion welding method for tungsten-titanium alloy target and copper alloy back plate |
| CN104213083A (en) * | 2013-06-03 | 2014-12-17 | 宁波江丰电子材料股份有限公司 | Manufacture method of tungsten-titanium target material |
| CN104741774A (en) * | 2013-12-31 | 2015-07-01 | 宁波江丰电子材料股份有限公司 | Welding method for tungsten-titanium-copper target material component |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111318657A (en) * | 2018-12-14 | 2020-06-23 | 宁波江丰电子材料股份有限公司 | Method for manufacturing titanium target copper-chromium alloy back plate |
| CN110923643A (en) * | 2019-12-30 | 2020-03-27 | 福建阿石创新材料股份有限公司 | Binding method of planar target material |
| CN111843161A (en) * | 2020-07-17 | 2020-10-30 | 宁波江丰电子材料股份有限公司 | WTi target and copper back plate welding method |
| CN111843161B (en) * | 2020-07-17 | 2022-02-08 | 宁波江丰电子材料股份有限公司 | WTi target and copper back plate welding method |
| CN113106402A (en) * | 2021-04-19 | 2021-07-13 | 宁波江丰电子材料股份有限公司 | Preparation method of integrated large-size planar target |
| WO2022262297A1 (en) * | 2021-06-15 | 2022-12-22 | 上海超群检测科技股份有限公司 | Method for manufacturing x-ray tube anode target material |
| CN113579233A (en) * | 2021-07-14 | 2021-11-02 | 先导薄膜材料有限公司 | Tungsten-titanium alloy target material and preparation method and application thereof |
| CN113579233B (en) * | 2021-07-14 | 2023-08-11 | 先导薄膜材料(安徽)有限公司 | Tungsten-titanium alloy target material and preparation method and application thereof |
| CN113967781A (en) * | 2021-11-01 | 2022-01-25 | 宁波江丰电子材料股份有限公司 | Sheath structure and welding method |
| CN114888421A (en) * | 2022-04-29 | 2022-08-12 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for silver target blank and copper-chromium alloy back plate |
| CN115876880A (en) * | 2022-12-16 | 2023-03-31 | 宁波江丰电子材料股份有限公司 | A method of ultrasonic detection of used WTI welding target |
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Application publication date: 20180206 |