CN107971620A - A kind of tungsten target material diffusion welding method and target material assembly - Google Patents
A kind of tungsten target material diffusion welding method and target material assembly Download PDFInfo
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- CN107971620A CN107971620A CN201711233465.1A CN201711233465A CN107971620A CN 107971620 A CN107971620 A CN 107971620A CN 201711233465 A CN201711233465 A CN 201711233465A CN 107971620 A CN107971620 A CN 107971620A
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- target material
- tungsten target
- titanizing
- copper alloy
- middle layer
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- 239000013077 target material Substances 0.000 title claims abstract description 89
- 239000010937 tungsten Substances 0.000 title claims abstract description 88
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims abstract description 87
- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 85
- 238000003466 welding Methods 0.000 title claims abstract description 71
- 238000009792 diffusion process Methods 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 25
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 68
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 67
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 63
- 239000010936 titanium Substances 0.000 claims abstract description 54
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 54
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 53
- 229910052751 metal Inorganic materials 0.000 claims abstract description 43
- 239000002184 metal Substances 0.000 claims abstract description 43
- 238000007747 plating Methods 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 229910000831 Steel Inorganic materials 0.000 claims description 28
- 239000010959 steel Substances 0.000 claims description 28
- 238000009413 insulation Methods 0.000 claims 1
- 208000037656 Respiratory Sounds Diseases 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 36
- 239000011248 coating agent Substances 0.000 description 15
- 238000000576 coating method Methods 0.000 description 15
- 239000004411 aluminium Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000000956 alloy Substances 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910001080 W alloy Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- QRJOYPHTNNOAOJ-UHFFFAOYSA-N copper gold Chemical compound [Cu].[Au] QRJOYPHTNNOAOJ-UHFFFAOYSA-N 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
- B23K20/021—Isostatic pressure welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
- B23K20/023—Thermo-compression bonding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/14—Preventing or minimising gas access, or using protective gases or vacuum during welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/22—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded
- B23K20/233—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer
- B23K20/2333—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer one layer being aluminium, magnesium or beryllium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/24—Preliminary treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention relates to semiconductor target technical field, more particularly, to a kind of tungsten target material diffusion welding method and target material assembly, it is easily cracked directly with copper alloy backing plate welding to alleviate tungsten target material existing in the prior art, and tungsten target material and aluminum middle layer, the technical problem of Diffusion Welding is not easy between aluminum middle layer and copper alloy.Welding surface plating last layer titanium metal film first in tungsten target material forms titanizing tungsten target material, plates last layer titanium metal film in two welding surfaces up and down of aluminum middle layer and form titanizing aluminum middle layer, form titanizing copper alloy backing plate in the welding surface plating last layer titanium metal film of copper alloy backing plate.Then titanizing tungsten target material, titanizing aluminum middle layer and titanizing copper alloy backing plate are assembled to form assembly, wherein titanizing aluminum middle layer is between titanizing tungsten target material and titanizing copper alloy backing plate.Technical solution provided by the invention can avoid the occurrence of crackle and easy Diffusion Welding.
Description
Technical field
The present invention relates to semiconductor target technical field, more particularly, to a kind of tungsten target material diffusion welding method and target group
Part.
Background technology
Semiconductor sputtering by the use of tungsten target material generally require intensity is higher, electrical conductivity is higher Cu alloy material as backboard with
It is welded.Tungsten material is a kind of fragile material, such as runs into shock or deformation process easily cracked, and copper alloy backing plate
It is a kind of larger material of coefficient of expansion, can be in heating and temperature-fall period because both expansions if directly welded with tungsten target material
Coefficient difference is larger to make product stress deformation occur, so as to cause tungsten cracked.And needed between tungsten and copper alloy backing plate higher
Welding temperature could spread together.Since semiconductor is difficult to and copper alloy backing plate Diffusion Welding, related patents with tungsten target material
In, a fine aluminium intermediate layer is added among tungsten target material and copper alloy backing plate, with the spy of the softer easily release stress of aluminum alloy material
Property, in heating and cooling process is welded, discharge tungsten and copper alloy stress, make tungsten target material be not easy to deform, but fine aluminium be not easy with
Copper alloy and tungsten target material Diffusion Welding.
There are problems with for existing technology：
1st, tungsten target material is directly easily cracked with copper alloy backing plate welding；
2nd, tungsten target material and aluminum middle layer, are not easy Diffusion Welding between aluminum middle layer and copper alloy.
The content of the invention
It is an object of the invention to provide a kind of tungsten target material diffusion welding method and target material assembly, to alleviate in the prior art
Existing tungsten target material is directly easily cracked with copper alloy backing plate welding, and tungsten target material and aluminum middle layer, aluminum middle layer and
The technical problem of Diffusion Welding is not easy between copper alloy.
In order to solve the above technical problems, technical solution provided by the invention is：
A kind of tungsten target material diffusion welding method,
Titanizing tungsten target material is formed in the welding surface plating last layer titanium metal film of tungsten target material；
Last layer titanium metal film, which is plated, in two welding surfaces up and down of aluminum middle layer forms titanizing aluminum middle layer；
Titanizing copper alloy backing plate is formed in the welding surface plating last layer titanium metal film of copper alloy backing plate；
The titanizing tungsten target material, the titanizing aluminum middle layer and the titanizing copper alloy backing plate are assembled to form assembly,
In the assembled condition, the titanizing aluminum middle layer is between the titanizing tungsten target material and the titanizing copper alloy backing plate.
Further,
The first steel plate is placed in the upper surface of the titanizing tungsten target material.
Further,
The second steel plate is placed in the lower surface of the titanizing copper alloy backing plate.
Further,
Jacket welding is carried out to the assembly for being provided with the first steel plate and the second steel plate, and jacket is vacuumized, vacuum
For≤10-3Pa。
Further,
After the completion of jacket welding, HIP welding is carried out, the temperature of HIP welding is 350 degrees Celsius, pressure 50-150MPa,
Keep the temperature 2-5h.
Further,
The thickness of the titanium metal film of the welding surface plating of tungsten target material is 2-20um.
Further,
The thickness of the titanium metal film of two welding surface platings up and down of aluminum middle layer is 2-20um.
Further,
The thickness of the titanium metal film of the welding surface plating of copper alloy backing plate is 2-20um.
Further,
The thickness of the aluminum middle layer is 2-7mm.
A kind of target material assembly, sputters for semiconductor, including：
The first steel plate, tungsten target material, aluminum middle layer, copper alloy backing plate and the second steel plate set gradually from top to bottom；
Between the tungsten target material and the aluminum middle layer, and set between the aluminum middle layer and the copper alloy backing plate
There is titanium coating.
With reference to above-mentioned technical proposal, the beneficial effect that the present invention can reach is：
The present invention provides a kind of tungsten target material diffusion welding method, plates last layer titanium in the welding surface of tungsten target material first
Film forms titanizing tungsten target material, plates last layer titanium metal film in two welding surfaces up and down of aluminum middle layer and formed among plating titanium aluminium
Layer, the welding surface plating last layer titanium metal film formation titanizing copper alloy backing plate in copper alloy backing plate.Then assemble titanizing tungsten target material,
To form assembly, wherein titanizing aluminum middle layer is located at titanizing tungsten target material and titanizing for titanizing aluminum middle layer and titanizing copper alloy backing plate
Between copper alloy backing plate.
Since titanium metal film is easy to be diffused with copper alloy and fine aluminium etc., copper alloy backing plate has by titanium metal film
Effect is connected with aluminum middle layer, and tungsten target material is effectively connected by titanium metal film with aluminum middle layer.Again due to the softer appearance of aluminum alloy material
The easily characteristic of release stress, in heating and cooling process is welded, effectively discharges tungsten and copper alloy stress, makes tungsten target material be not easy to occur
Deformation, is not likely to produce crackle.
Brief description of the drawings
, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution of the prior art
Embodiment or attached drawing needed to be used in the description of the prior art are briefly described, it should be apparent that, in describing below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
Put, other attached drawings can also be obtained according to these attached drawings.
Fig. 1 is the structure diagram of assembly provided in an embodiment of the present invention；
Fig. 2 is the structure diagram that assembly provided in an embodiment of the present invention is provided with the first steel plate and the second steel plate；
Fig. 3 is the schematic diagram of tungsten target material diffusion welding method provided in an embodiment of the present invention.
Icon：100- tungsten target materials；200- aluminum middle layers；300- copper alloy backing plates；400- titanium metal films；500-
One steel plate；The second steel plates of 600-.
Embodiment
Technical scheme is clearly and completely described below in conjunction with attached drawing, it is clear that described implementation
Example is part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
Personnel's all other embodiments obtained without making creative work, belong to the scope of protection of the invention.
In the description of the present invention, it is necessary to explanation, term " " center ", " on ", " under ", "left", "right", " vertical ",
The orientation or position relationship of the instruction such as " level ", " interior ", " outer " be based on orientation shown in the drawings or position relationship, merely to
Easy to describe the present invention and simplify description, rather than instruction or imply signified device or element must have specific orientation,
With specific azimuth configuration and operation, therefore it is not considered as limiting the invention.In addition, term " first ", " second ",
" the 3rd " is only used for description purpose, and it is not intended that instruction or hint relative importance.
In the description of the present invention, it is necessary to illustrate, unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected, or be integrally connected；Can
To be mechanical connection or be electrically connected；It can be directly connected, can also be indirectly connected by intermediary, Ke Yishi
Connection inside two elements.For the ordinary skill in the art, with concrete condition above-mentioned term can be understood at this
Concrete meaning in invention.
Diffusion Welding (DiffusionBonding)：The material surface to contact with each other, the phase under the action of temperature and pressure
It is mutually close, locally it is plastically deformed, generation phase counterdiffusion, forms new diffusion layer in interface between atom, so as to fulfill can
By connection.
Vacuum coating：A kind of technology that thin-film material is produced by physical method.Vacuum indoor material atom from heating
Source, which isolates, to be got on the surface of plated object.
Embodiment 1 and embodiment 2 are described in detail below in conjunction with the accompanying drawings：
Fig. 1 is the structure diagram of assembly provided in an embodiment of the present invention；Fig. 2 is assembling provided in an embodiment of the present invention
Body is provided with the structure diagram of the first steel plate and the second steel plate；Fig. 3 is tungsten target material Diffusion Welding provided in an embodiment of the present invention
The schematic diagram of method.
Embodiment 1
A kind of 100 diffusion welding method of tungsten target material is present embodiments provided, specifically includes following steps：
S1, the 400 formation titanizing tungsten target material 100 of welding surface plating last layer titanium metal film in tungsten target material 100；
S2, aluminum middle layer 200 two welding surfaces up and down plate last layer titanium metal film 400 formed titanizing aluminum middle layer
200；
S3, the 400 formation titanizing copper alloy backing plate 300 of welding surface plating last layer titanium metal film in copper alloy backing plate 300；
S4, assemble titanizing tungsten target material 100, titanizing aluminum middle layer 200 and titanizing copper alloy backing plate 300 to form assembly,
In the assembled condition, titanizing aluminum middle layer 200 is between titanizing tungsten target material 100 and titanizing copper alloy backing plate 300.
Due to aluminum alloy material it is softer easily release stress characteristic, in heating and cooling process weld, effectively discharge tungsten with
Copper alloy stress, makes tungsten target material 100 be not easy to deform, is not likely to produce crackle.Again since titanium metal film 400 is easy to close with copper
Gold and fine aluminium etc. are diffused, therefore copper alloy backing plate 300 is effectively connected by titanium metal film 400 with aluminum middle layer 200, tungsten target
Material 100 is effectively connected by titanium metal film 400 with aluminum middle layer 200.
Structure detailed description below to assembly is as follows：
In assembly, the first steel plate 500, tungsten target material 100, aluminum middle layer 200, the copper alloy back of the body that set gradually from top to bottom
300 and second steel plate 600 of plate；Between tungsten target material 100 and aluminum middle layer 200, and aluminum middle layer 200 and copper alloy backing plate 300
Between be provided with titanium coating.
Wherein, the titanium coating between tungsten target material 100 and aluminum middle layer 200 by tungsten target material 100 lower surface titanium
400 coating of film, and 400 coating of the titanium metal film composition of the upper surface of aluminum middle layer 200.
Wherein, the titanium coating between aluminum middle layer 200 and copper alloy backing plate 300 by aluminum middle layer 200 lower surface
400 coating of the titanium metal film composition of the upper surface of 400 coating of titanium metal film and copper alloy backing plate 300.
Wherein, copper alloy backing plate 300 is arranged to U-shaped structure, side plate and bottom plate, and side plate and bottom plate, which are formed, accommodates tungsten target material
100 and the space of aluminum middle layer 200.The upper surface of tungsten target material 100 and the upper surface flush of side plate.
Wherein, the thickness of the titanium metal film 400 of the welding surface plating of tungsten target material 100 is 2-20um.
Wherein, the thickness of the titanium metal film 400 of two welding surface platings up and down of aluminum middle layer 200 is 2-20um.
Wherein, the thickness of the titanium metal film 400 of the welding surface plating of copper alloy backing plate 300 is 2-20um.
Wherein, the thickness of aluminum middle layer 200 is 2-7mm.
The installs fixture after assembly is completed, it is necessary on assembly, specifically：
The first steel plate 500 is placed in the upper surface of titanizing tungsten target material 100.Put in the lower surface of titanizing copper alloy backing plate 300
Put the second steel plate 600.Wherein, the length of the first steel plate 500 and the second steel plate 600 and the equal length of copper alloy backing plate 300.
, it is necessary to carry out soldering, specifically after in fixture, installation is complete：
S5, carry out the assembly for being provided with the first steel plate 500 and the second steel plate 600 jacket welding, and jacket is taken out true
Sky, vacuum are≤10-3Pa。
After the completion of S6, jacket welding, HIP welding is carried out, the temperature of HIP welding is 350 degrees Celsius, pressure 50-
150MPa, keeps the temperature 2-5h.On HIP be welded as hot isostatic press welding method, HIP welding can ensure the high intensity weldering of target
Connect, and be suitable for high-power sputtering.
Embodiment 2
A kind of target material assembly is present embodiments provided, is sputtered for semiconductor, including：
The first steel plate 500, tungsten target material 100, aluminum middle layer 200, the copper alloy backing plate 300 and set gradually from top to bottom
Two steel plates 600；Between tungsten target material 100 and aluminum middle layer 200, and it is provided between aluminum middle layer 200 and copper alloy backing plate 300
Titanium coating.
Wherein, the titanium coating between tungsten target material 100 and aluminum middle layer 200 by tungsten target material 100 lower surface titanium
400 coating of film, and 400 coating of the titanium metal film composition of the upper surface of aluminum middle layer 200.
Wherein, the titanium coating between aluminum middle layer 200 and copper alloy backing plate 300 by aluminum middle layer 200 lower surface
400 coating of the titanium metal film composition of the upper surface of 400 coating of titanium metal film and copper alloy backing plate 300.
Wherein, copper alloy backing plate 300 is arranged to U-shaped structure, side plate and bottom plate, and side plate and bottom plate, which are formed, accommodates tungsten target material
100 and the space of aluminum middle layer 200.The upper surface of tungsten target material 100 and the upper surface flush of side plate.
Wherein, the thickness of the titanium metal film 400 of the welding surface plating of tungsten target material 100 is 2-20um.
Wherein, the thickness of the titanium metal film 400 of two welding surface platings up and down of aluminum middle layer 200 is 2-20um.
Wherein, the thickness of the titanium metal film 400 of the welding surface plating of copper alloy backing plate 300 is 2-20um.
Wherein, the thickness of aluminum middle layer 200 is 2-7mm.
The beneficial effect that target material assembly provided in this embodiment can reach is：
Due to aluminum alloy material it is softer easily release stress characteristic, in heating and cooling process weld, effectively discharge tungsten with
Copper alloy stress, makes tungsten target material 100 be not easy to deform, is not likely to produce crackle.Again since titanium metal film 400 is easy to close with copper
Gold and fine aluminium etc. are diffused, therefore copper alloy backing plate 300 is effectively connected by titanium metal film 400 with aluminum middle layer 200, tungsten target
Material 100 is effectively connected by titanium metal film 400 with aluminum middle layer 200.
Finally it should be noted that：The above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe is described in detail the present invention with reference to preceding each embodiment, it will be understood by those of ordinary skill in the art that：It is still
The technical solution that can be recorded to preceding each embodiment is modified, and either which part or all technical characteristic are equal
Replace；And these modifications or replacement, the essence of appropriate technical solution is departed from various embodiments of the present invention technical solution
Scope.
Claims (10)
- A kind of 1. tungsten target material diffusion welding method, it is characterised in thatTitanizing tungsten target material is formed in the welding surface plating last layer titanium metal film of tungsten target material；Last layer titanium metal film, which is plated, in two welding surfaces up and down of aluminum middle layer forms titanizing aluminum middle layer；Titanizing copper alloy backing plate is formed in the welding surface plating last layer titanium metal film of copper alloy backing plate；The titanizing tungsten target material, the titanizing aluminum middle layer and the titanizing copper alloy backing plate are assembled to form assembly, is being filled With under state, the titanizing aluminum middle layer is between the titanizing tungsten target material and the titanizing copper alloy backing plate.
- 2. tungsten target material diffusion welding method according to claim 1, it is characterised in thatThe first steel plate is placed in the upper surface of the titanizing tungsten target material.
- 3. tungsten target material diffusion welding method according to claim 2, it is characterised in thatThe second steel plate is placed in the lower surface of the titanizing copper alloy backing plate.
- 4. tungsten target material diffusion welding method according to claim 3, it is characterised in thatJacket welding is carried out to the assembly for being provided with the first steel plate and the second steel plate, and jacket is vacuumized, vacuum for≤ 10-3Pa。
- 5. tungsten target material diffusion welding method according to claim 4, it is characterised in thatAfter the completion of jacket welding, HIP welding is carried out, the temperature of HIP welding is 350 degrees Celsius, pressure 50-150MPa, insulation 2-5h。
- 6. tungsten target material diffusion welding method according to claim 1, it is characterised in thatThe thickness of the titanium metal film of the welding surface plating of tungsten target material is 2-20um.
- 7. tungsten target material diffusion welding method according to claim 1, it is characterised in thatThe thickness of the titanium metal film of two welding surface platings up and down of aluminum middle layer is 2-20um.
- 8. tungsten target material diffusion welding method according to claim 1, it is characterised in thatThe thickness of the titanium metal film of the welding surface plating of copper alloy backing plate is 2-20um.
- 9. tungsten target material diffusion welding method according to claim 1, it is characterised in thatThe thickness of the aluminum middle layer is 2-7mm.
- 10. a kind of target material assembly, sputters for semiconductor, it is characterised in that including：The first steel plate, tungsten target material, aluminum middle layer, copper alloy backing plate and the second steel plate set gradually from top to bottom；Between the tungsten target material and the aluminum middle layer, and titanium is provided between the aluminum middle layer and the copper alloy backing plate Metal layer.
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| CN201711233465.1A CN107971620A (en) | 2017-11-29 | 2017-11-29 | A kind of tungsten target material diffusion welding method and target material assembly |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111015090A (en) * | 2019-11-25 | 2020-04-17 | 有研亿金新材料有限公司 | Copper-based target and back plate welding method |
| CN111378938A (en) * | 2018-12-29 | 2020-07-07 | 宁波江丰电子材料股份有限公司 | Target assembly and manufacturing method thereof |
| CN111496414A (en) * | 2020-04-01 | 2020-08-07 | 武汉工程大学 | Graphite and copper joint and preparation method thereof |
| CN111889869A (en) * | 2020-07-21 | 2020-11-06 | 有研亿金新材料有限公司 | Welding method for high-purity rare earth and alloy target |
| CN112122764A (en) * | 2020-09-16 | 2020-12-25 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for tungsten target and copper-zinc alloy back plate |
| CN112743217A (en) * | 2020-12-29 | 2021-05-04 | 宁波江丰电子材料股份有限公司 | Welding structure and welding method of titanium-aluminum alloy target assembly |
| CN112846171A (en) * | 2021-01-05 | 2021-05-28 | 有研亿金新材料有限公司 | Powder interlayer and method for performing hot isostatic pressing diffusion welding on tungsten target by using same |
| CN112935512A (en) * | 2021-03-26 | 2021-06-11 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for cobalt target and copper-chromium alloy back plate |
| CN113084323A (en) * | 2021-04-30 | 2021-07-09 | 宁波江丰电子材料股份有限公司 | Welding structure and welding method of tungsten target assembly |
| CN113305412A (en) * | 2021-06-18 | 2021-08-27 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for tungsten target and copper back plate |
| CN113878221A (en) * | 2021-11-16 | 2022-01-04 | 宁波江丰电子材料股份有限公司 | Method for improving welding quality of tungsten target |
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| CN111378938A (en) * | 2018-12-29 | 2020-07-07 | 宁波江丰电子材料股份有限公司 | Target assembly and manufacturing method thereof |
| CN111015090A (en) * | 2019-11-25 | 2020-04-17 | 有研亿金新材料有限公司 | Copper-based target and back plate welding method |
| CN111496414A (en) * | 2020-04-01 | 2020-08-07 | 武汉工程大学 | Graphite and copper joint and preparation method thereof |
| CN111496414B (en) * | 2020-04-01 | 2022-04-29 | 武汉工程大学 | A kind of joint of graphite and copper and preparation method thereof |
| CN111889869B (en) * | 2020-07-21 | 2022-02-15 | 有研亿金新材料有限公司 | Welding method for high-purity rare earth and alloy target |
| CN111889869A (en) * | 2020-07-21 | 2020-11-06 | 有研亿金新材料有限公司 | Welding method for high-purity rare earth and alloy target |
| CN112122764A (en) * | 2020-09-16 | 2020-12-25 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for tungsten target and copper-zinc alloy back plate |
| CN112743217A (en) * | 2020-12-29 | 2021-05-04 | 宁波江丰电子材料股份有限公司 | Welding structure and welding method of titanium-aluminum alloy target assembly |
| CN112846171A (en) * | 2021-01-05 | 2021-05-28 | 有研亿金新材料有限公司 | Powder interlayer and method for performing hot isostatic pressing diffusion welding on tungsten target by using same |
| CN112846171B (en) * | 2021-01-05 | 2023-01-10 | 有研亿金新材料有限公司 | Powder interlayer and method for performing hot isostatic pressing diffusion welding on tungsten target by using same |
| CN112935512A (en) * | 2021-03-26 | 2021-06-11 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for cobalt target and copper-chromium alloy back plate |
| CN113084323A (en) * | 2021-04-30 | 2021-07-09 | 宁波江丰电子材料股份有限公司 | Welding structure and welding method of tungsten target assembly |
| CN113305412A (en) * | 2021-06-18 | 2021-08-27 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for tungsten target and copper back plate |
| CN113878221A (en) * | 2021-11-16 | 2022-01-04 | 宁波江丰电子材料股份有限公司 | Method for improving welding quality of tungsten target |
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