CN107633865B - Data reading device and method of nonvolatile memory - Google Patents
Data reading device and method of nonvolatile memory Download PDFInfo
- Publication number
- CN107633865B CN107633865B CN201610574359.9A CN201610574359A CN107633865B CN 107633865 B CN107633865 B CN 107633865B CN 201610574359 A CN201610574359 A CN 201610574359A CN 107633865 B CN107633865 B CN 107633865B
- Authority
- CN
- China
- Prior art keywords
- memory cell
- voltage
- read
- reading
- unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000012795 verification Methods 0.000 claims abstract description 46
- 230000002401 inhibitory effect Effects 0.000 claims abstract description 3
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 13
- 238000010586 diagram Methods 0.000 description 4
- 230000014759 maintenance of location Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Landscapes
- Read Only Memory (AREA)
Abstract
The invention discloses a data reading device and method of a nonvolatile memory. The device comprises: the read comparator is used for comparing the cell voltage of the memory cell with a read reference voltage according to the received read request and outputting a read result; the verification comparator is used for comparing the unit voltage of the storage unit with a verification reference voltage and outputting a verification result; wherein the verify reference voltage is less than the read reference voltage; the offset address recording unit is used for recording the offset unit address of the offset storage unit when the storage unit is determined to be the offset storage unit according to the reading result and the checking result and the unit voltage is determined to be higher than the set threshold value; and the reading correction unit is used for determining the reading result of the offset storage unit as a set value and inhibiting the output of the reading comparator if the received reading request hits the offset unit address. The invention can reduce misreading in the nonvolatile memory reading operation and improve the reliability.
Description
Technical Field
The present invention relates to the field of memory technologies, and in particular, to a data reading device and method for a nonvolatile memory.
Background
With the increasing popularity of electronic devices, there is an increasing demand for high density and low power consumption non-volatile memory. Reliability is an important indicator for evaluating memory. Reliability refers to the product performing a specified function under specified conditions and for a specified time.
Data retention is an important parameter in evaluating the reliability of nonvolatile memory. The data retention refers to the ability of the non-volatile memory to store data that is not distorted or lost over time and yet still be efficiently read. Because the nonvolatile memory has the characteristic of no loss of power-down data, the nonvolatile memory has certain data retention capacity and can read the stored data through a reading operation.
For a memory cell, the amount of charge stored in the floating gate determines the threshold voltage of the memory cell, which determines whether the memory cell stores a data "0" or a data "1". However, due to the influence of some external factors, the charge stored in the floating gate is increased, so that the threshold voltage of the memory cell is increased, and as time goes by, when the threshold voltage is increased to a certain value, the stored data in the memory cell is changed, and when a user performs a read operation on the memory cell again, misreading is caused, so that the reliability of the nonvolatile memory is reduced.
Disclosure of Invention
The invention provides a data reading device and a data reading method for a nonvolatile memory, which are used for reducing misreading in the reading operation process of the nonvolatile memory and improving the reliability of the data of the nonvolatile memory.
In a first aspect, an embodiment of the present invention provides a data reading apparatus for a nonvolatile memory, including:
the input end of the reading comparator is connected with the reading reference voltage and the output end of the storage unit, and is used for comparing the unit voltage of the storage unit with the reading reference voltage according to the received reading request and outputting a reading result;
the input end of the check comparator is connected with the check reference voltage and the output end of the storage unit, and is used for comparing the unit voltage of the storage unit with the check reference voltage and outputting a check result; wherein the verify reference voltage is less than the read reference voltage;
the offset address recording unit is connected with the reading comparator and the checking comparator and is used for recording the offset unit address of the offset storage unit when the storage unit is determined to be the offset storage unit according to the reading result and the checking result and the unit voltage is higher than the set threshold value;
and the reading correction unit is connected with the offset address recording unit and is used for determining that the reading result of the offset storage unit is a set value and inhibiting the output of the reading comparator if the received reading request hits the offset unit address.
In the above scheme, optionally, if the cell voltage is greater than the verification reference voltage and less than the read reference voltage, determining the memory cell to be an offset memory cell;
if the cell voltage is less than the verification reference voltage and the read reference voltage, determining that the memory cell is an erased memory cell;
if the cell voltage is greater than the verify reference voltage and the read reference voltage, the memory cell is determined to be a programmed memory cell.
In the above scheme, optionally, the set value is "1".
In the above scheme, optionally, the input end of the read comparator is connected with the drain electrode of the memory cell and the drain electrode of the read reference memory cell respectively, the input end of the check comparator is connected with the drain electrode of the memory cell and the drain electrode of the check reference memory cell respectively,
the drain electrode of the memory cell is connected with the first resistor, the other end of the first resistor is connected with a power supply, and the source electrode of the memory cell is grounded;
the drain electrode of the reading reference unit is connected with a second resistor, the other end of the second resistor is connected with a power supply, and the source electrode of the reading reference unit is grounded;
the drain electrode of the verification reference unit is connected with a third resistor, the other end of the third resistor is connected with a power supply, and the source electrode of the verification reference unit is grounded.
In a second aspect, an embodiment of the present invention further provides a data reading method of a nonvolatile memory, which is performed by using the data reading device of the nonvolatile memory provided in the first aspect of the present invention, where the method includes:
reading the cell voltage of the memory cell according to the received read request;
comparing the cell voltage with a read reference voltage by a read comparator to output a read result;
comparing the unit voltage with a verification reference voltage through a verification comparator to output a verification result;
if the storage unit is determined to be an offset storage unit when the unit voltage is higher than the set threshold value according to the reading result and the checking result, recording an offset unit address of the offset storage unit through an offset address recording unit;
and if the received read request hits the offset unit address, determining that the read result of the offset storage unit is a set value through a read correction unit.
In the above scheme, optionally, if the cell voltage is greater than the verification reference voltage and less than the read reference voltage, determining the memory cell to be an offset memory cell;
if the cell voltage is less than the verification reference voltage and the read reference voltage, determining that the memory cell is an erased memory cell;
if the cell voltage is less than the verify reference voltage and the read reference voltage, the memory cell is determined to be a programmed memory cell.
In the above scheme, optionally, the set value is "1".
In the above solution, optionally, the received read request is specifically: the gate of the memory cell, the gate of the read reference memory cell, and the gate of the verify memory cell apply a read voltage.
In the above scheme, optionally, the read voltage is 5V-8V;
according to the embodiment of the invention, the offset storage unit is determined and recorded according to the reading result and the checking result in the process of reading the data by the storage unit, when the voltage of the storage unit is higher than the set threshold value, the reading result of the storage unit is determined and output as the set value when the storage unit is read next time, so that misreading in the process of reading the nonvolatile memory is reduced, and the reliability of the data of the nonvolatile memory is improved.
Drawings
FIG. 1 is a schematic diagram of a data reading apparatus of a nonvolatile memory according to a first embodiment of the present invention;
FIG. 2 is a schematic diagram showing the structure of a read comparator and a verify comparator of a data reading apparatus of a nonvolatile memory according to a third embodiment of the present invention;
fig. 3 is a flow chart of a data reading method of a nonvolatile memory according to a fourth embodiment of the invention.
Detailed Description
The invention is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting thereof. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present invention are shown in the drawings.
Example 1
Fig. 1 is a schematic diagram of a data reading apparatus for a nonvolatile memory according to an embodiment of the present invention, where the embodiment is applicable to a case where a memory reads data, and as shown in fig. 1, the data reading apparatus for a nonvolatile memory according to an embodiment of the present invention includes a read comparator 110, a check comparator 120, an offset address recording unit 130, and a read correction unit 140.
The input terminal of the read comparator 110 is connected to the read reference voltage and the output terminal of the memory cell, and is configured to compare the cell voltage of the memory cell with the read reference voltage according to the received read request, and output a read result.
In the process of the nonvolatile memory reading operation, if the memory cell is an erased memory cell subjected to the erasing operation, the drain current is larger, and if the memory cell is a programmed memory cell subjected to the programming operation, the drain current is smaller, and the memory data of the memory cell can be obtained by comparing the drain current of the memory cell with the reference current. The comparison of the drain current of the memory cell with the reference current can be converted into a comparison of voltage through a circuit, so that the memory data of the memory cell can be obtained through a voltage comparator.
The read comparator may be an inverting voltage comparator, the non-inverting terminal of the voltage comparator is connected to the output terminal of the memory cell, the inverting terminal of the voltage comparator is connected to the read reference voltage, when the cell voltage of the memory cell is greater than the read reference voltage, the read result is "0", which indicates that the memory cell is subjected to the programming operation, and the stored data is "0"; when the cell voltage of the memory cell is less than the reference voltage, the read result is "1", which indicates that the memory cell is erased and the stored data is "1".
The input end of the verification comparator 120 is connected with the verification reference voltage and the output end of the memory cell, and is used for comparing the cell voltage of the memory cell with the verification reference voltage and outputting a verification result; wherein the verify reference voltage is less than the read reference voltage;
the verification comparator may be an inverting voltage comparator, the non-inverting terminal of the voltage comparator is connected to the output terminal of the memory cell, the inverting terminal of the voltage comparator is connected to the verification reference voltage, and when the cell voltage of the memory cell is greater than the verification reference voltage, the verification result is "0"; when the cell voltage of the memory cell is less than the verification reference voltage, the verification result is "1".
The offset address recording unit 130 is connected to the read comparator and the check comparator, and is configured to determine that the storage unit is an offset storage unit according to the read result and the check result when the unit voltage is higher than the set threshold value, and record an offset unit address of the offset storage unit;
illustratively, recording the offset unit address may be writing the address of the offset unit into any specified length of free memory location of the current read memory or into any specified memory.
And a read correction unit 140, connected to the offset address recording unit, for determining that the read result of the offset storage unit is a set value and suppressing the output of the read comparator if the received read request hits the offset unit address.
For example, the address of the offset storage unit recorded in the memory is loaded into any register, and if the address of the storage unit currently read is the same as the address loaded in the register, the read request is considered to hit the offset storage unit address, and the read result of the storage unit is determined and output as the set value.
For example, the determination and output of the read result of the storage unit as the set value may be that the output end of the read result is ored with "1" if the set value is "1", and the output end of the read result is ored with "0" if the set value is "0".
According to the technical scheme of the embodiment, the offset storage unit is determined and recorded according to the reading result of the reading comparator and the checking result of the checking comparator when the unit voltage is higher than the set threshold value, so that the reading result is determined and output as the set value when the storage unit is read next time, misreading in the reading operation process of the nonvolatile memory is reduced, and the reliability of the nonvolatile memory data is improved.
Example two
The second embodiment is a further explanation of a data reading apparatus for a nonvolatile memory according to the first embodiment of the present invention. In the apparatus according to the first embodiment, the offset address recording unit is specifically configured to: if the cell voltage is greater than the verification reference voltage and less than the read reference voltage, determining that the memory cell is an offset memory cell;
if the cell voltage is less than the verification reference voltage and the read reference voltage, determining that the memory cell is an erased memory cell;
if the cell voltage is greater than the verify reference voltage and the read reference voltage, the memory cell is determined to be a programmed memory cell.
The set value is "1".
The nonvolatile memory cell causes an increase in the charge stored in the floating gate due to the influence of the read voltage and the like, thereby causing an increase in the threshold voltage of the memory cell. For an erased memory cell that has undergone an erase operation, after the threshold voltage has risen to a certain value, the stored data of the erased memory cell will change from "1" to "0". During the course of increasing the threshold voltage, the drain current of the memory cell decreases and the cell voltage will correspondingly change, and the preferred cell voltage increases accordingly. By setting the verify reference voltage to be less than the read reference voltage, if the change in the cell voltage of the memory cell changes the verify result, but not the read result, the memory cell is determined to be an offset memory cell. That is, in the process of the memory cell reading operation, for the erased memory cell without serious offset, the drain current is larger, the cell voltage is smaller than the verification reference voltage and the reading reference voltage, and the reading result and the verification result are "1"; when the threshold voltage is increased to a certain value, the cell voltage of the memory cell can be larger than the check reference voltage and smaller than the read reference voltage because the check reference voltage is smaller than the read reference voltage, and the check result is 0 and the read result is 1, so that the memory cell is an offset memory cell; for programming a memory cell, its drain current is small, the cell voltage is greater than the verify reference voltage and the read reference voltage, and the read result and the verify result are "0". By setting the value of "1", the reading result of the erased memory cell with serious offset can be forcedly output as "1", and the situation that the stored data of the erased memory cell is changed from "1" to "0" due to the increase of the threshold voltage, thereby causing misreading is avoided.
According to the technical scheme of the embodiment, the offset memory cell, the erasing memory cell and the programming memory cell can be detected through the offset address recording unit, and the erasing memory cell with the serious offset of the threshold voltage can be effectively recorded before the threshold voltage value of the memory cell is not reached to change the stored data, when the memory cell is read next time, the threshold voltage of the memory cell is increased due to the fact that the stored charge in the floating gate is increased due to the influence of factors such as the read voltage and the like by setting the set value of the read result to be 1, so that the stored data of the erasing memory cell is changed from 1 to 0, and the situation of misread is caused, and the reliability of the nonvolatile memory data is improved.
Example III
Fig. 2 is a schematic diagram of a read comparator and a verify comparator of a data reading device of a nonvolatile memory according to a third embodiment of the present invention. Embodiment three is a further explanation of a read comparator and a verify comparator in a data reading device of a nonvolatile memory according to the above embodiment of the present invention. The input end of the read comparator is respectively connected with the drain electrode of the memory cell and the drain electrode of the read reference memory cell, the input end of the check comparator is respectively connected with the drain electrode of the memory cell and the drain electrode of the check reference memory cell,
the drain electrode of the memory cell is connected with the first resistor, the other end of the first resistor is connected with a power supply, and the source electrode of the memory cell is grounded;
the drain electrode of the reading reference unit is connected with a second resistor, the other end of the second resistor is connected with a power supply, and the source electrode of the reading reference unit is grounded;
the drain electrode of the verification reference unit is connected with a third resistor, the other end of the third resistor is connected with a power supply, and the source electrode of the verification reference unit is grounded.
Preferably, as shown in FIG. 2, the read comparator is a voltage comparator SA, the non-inverting terminal of the voltage comparator SA and the memory cell C A Drain electrode of (C) is connected to A Drain of (d) and first resistor R A Is connected to one end of the memory cell C A A source electrode of (1) is grounded, a first resistor R A Is connected with the other end of the power supply V CC The inverting terminal of the voltage comparator SA is connected to the read reference memory cell C R Is connected to the drain of the read reference memory cell C R Drain electrode of (d) and second resistor R R Is connected to one end of the read reference memory cell C R The source electrode of (2) is grounded, a second resistor R R Is connected with the other end of the power supply V CC Wherein R is attached to A ＝R R . The read comparator SA reads the memory cell C A Is set to the drain voltage V A And read reference memory cell C R Is set to the drain voltage V ref And comparing to obtain a reading result. Due to V A ＝V CC -R A I A ，V ref ＝V CC -R R I ref And R is A ＝R R Then when I A >I ref V at the time of A <V ref SA outputs a reading result of "1"; when I A <I ref V at the time of A >V ref The SA outputs a reading result "0".
The verification comparator is a voltage comparator SA1, and the non-inverting terminal of the voltage comparator SA1 and the memory cell C A The inverting terminal of the voltage comparator SA1 is connected with the verification reference memory cell C R1 Is connected with the drain of the verification reference memory cell C R1 Drain of (d) and third resistor R R1 Is connected to one end of the check reference memory cell C R1 The source electrode of (2) is grounded, a third resistor R R1 Is connected with the other end of the power supply V CC Wherein R is attached to R1 ＝R A . By verifying the comparator by comparing the memory cell C A Is set to the drain voltage V A And verify reference memory cell C R1 Is set to the drain voltage V ref1 And comparing to obtain a verification result. Due to V A ＝V CC -R A I A ，V ref1 ＝V CC -R R1 I ref1 And R is R1 ＝R A Then when I A >I ref1 V at the time of A <V ref1 SA1 outputs a check result of "1"; when I A <I ref1 V at the time of A >V ref1 SA1 outputs a check result "0".
Due to the influence of the read voltage and other factors, the charge stored in the floating gate is increased, so that the threshold voltage of the memory cell is increased. In the reading of the memory cell, if the threshold voltage is raised, the memory cell drain current I is caused A Reducing, i.e. the cell drain voltage V A Rise, therefore, the memory cell drain voltage V A The change in the threshold voltage of the memory cell may reflect a trend of change in the threshold voltage of the memory cell. If the memory cell is an erased memory cell subjected to an erase operation and the threshold voltage is not severely shifted, the memory cell exhibits a low threshold voltage, i.e., V A Smaller, so that V A <V ref ，V A <V ref1 That is, the SA outputs the reading result "1", and the SA1 outputs the checking result "1"; if the threshold is electricPressure rise, V A Will also rise due to V ref1 <V ref When V A When the pressure is raised to a certain value, V can be caused A <V ref ，V A >V ref1 That is, SA outputs a reading result of "1", SA1 outputs a verification result of "0", it can be determined that the threshold voltage of the memory cell is severely shifted at this time, and if the threshold voltage is continuously raised, V will be caused A >V ref That is, the read result is "0", and when the read result is erroneous, the erroneous reading phenomenon can be avoided by determining and outputting the read result of the memory cell as "1". If the memory cell is a programmed memory cell subjected to a programming operation, the memory cell exhibits a high threshold voltage, i.e., V A Larger, make V A >V ref ，V A >V ref1 That is, the SA outputs the read result "0", and the SA1 outputs the check result "0".
For example, the resistances of the first resistor, the second resistor, and the third resistor may not be equal. The threshold voltages of the read reference memory cell and the verify reference memory cell can be controlled by controlling the charges stored in the floating gates of the read reference memory cell and the verify reference memory cell, thereby determining the read reference voltage and the verify reference voltage.
According to the technical scheme, the input end of the read comparator is connected with the drain electrode of the storage unit and the drain electrode of the read reference storage unit respectively, the input end of the check comparator is connected with the drain electrode of the storage unit and the drain electrode of the check reference storage unit respectively, a read result and a check result are obtained, the offset storage unit is determined and recorded according to the read result and the check result, and the read result is determined and output as a set value when the storage unit is read next time, so that misreading in the process of reading operation of nonvolatile storage is reduced, and the reliability of nonvolatile storage data is improved.
Example IV
Fig. 3 is a flow chart of a data reading method of a nonvolatile memory according to a fourth embodiment of the invention, which is executed based on the data reading device of any nonvolatile memory in the above embodiments.
Step 310, reading the cell voltage of the memory cell according to the received read request;
preferably, the received read request is specifically: the gate of the memory cell, the gate of the read reference memory cell, and the gate of the verify memory cell apply a read voltage.
Preferably, the read voltage is 5V-8V.
Step 320, comparing the cell voltage with a read reference voltage by a read comparator to output a read result;
step 330, comparing the cell voltage with a verification reference voltage by a verification comparator to output a verification result;
the execution order of steps 320 and 330 is not limited, and may be performed sequentially, or step 330 may be performed first, then step 320 may be performed, or may be performed in parallel.
Step 340, if it is determined that the storage unit is an offset storage unit when it is determined that the cell voltage is higher than the set threshold value according to the read result and the check result, recording an offset cell address of the offset storage unit by an offset address recording unit;
preferably, if the cell voltage is greater than the verify reference voltage and less than the read reference voltage, determining that the memory cell is an offset memory cell;
if the cell voltage is less than the verification reference voltage and the read reference voltage, determining that the memory cell is an erased memory cell;
if the cell voltage is less than the verify reference voltage and the read reference voltage, the memory cell is determined to be a programmed memory cell.
Step 350, if the received read request hits the offset unit address, the read correction unit determines that the read result of the offset storage unit is a set value.
Preferably, the set point is "1".
According to the technical scheme of the embodiment, the offset storage unit is determined and recorded according to the reading result of the reading comparator and the checking result of the checking comparator when the unit voltage is higher than the set threshold value, so that the reading result is determined and output as the set value when the storage unit is read next time, misreading in the read operation process of nonvolatile storage is reduced, and the reliability of nonvolatile storage data is improved.
The method can be executed by the device provided by the first to third embodiments of the present invention, and has the corresponding functions and beneficial effects of the device. Technical details not described in detail in this embodiment can be seen in the devices provided in the first to third embodiments of the present invention.
Note that the above is only a preferred embodiment of the present invention and the technical principle applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, while the invention has been described in connection with the above embodiments, the invention is not limited to the embodiments, but may be embodied in many other equivalent forms without departing from the spirit or scope of the invention, which is set forth in the following claims.
Claims (9)
1. A data reading apparatus of a nonvolatile memory, comprising:
the input end of the reading comparator is connected with the reading reference voltage and the output end of the storage unit, and is used for comparing the unit voltage of the storage unit with the reading reference voltage according to the received reading request and outputting a reading result;
the input end of the check comparator is connected with the check reference voltage and the output end of the storage unit, and is used for comparing the unit voltage of the storage unit with the check reference voltage and outputting a check result; wherein the verify reference voltage is less than the read reference voltage;
the offset address recording unit is connected with the reading comparator and the checking comparator and is used for recording the offset unit address of the offset storage unit when the storage unit is determined to be the offset storage unit according to the reading result and the checking result and the unit voltage is higher than the set threshold value; the address of the recording offset unit is written into an idle storage unit with any appointed length of the current read memory or written into any appointed memory;
the reading correction unit is connected with the offset address recording unit and is used for determining that the reading result of the offset storage unit is a set value and inhibiting the output of the reading comparator if the received reading request hits the offset unit address;
and the reading correction unit is used for performing OR operation on the output end of the reading result of the offset storage unit and the set value if the set value is 1, and performing AND operation on the output end of the reading result of the offset storage unit and the set value if the set value is 0.
2. The apparatus according to claim 1, wherein: the offset address recording unit is specifically configured to:
if the cell voltage is greater than the verification reference voltage and less than the read reference voltage, determining that the memory cell is an offset memory cell;
if the cell voltage is less than the verification reference voltage and the read reference voltage, determining that the memory cell is an erased memory cell;
if the cell voltage is greater than the verify reference voltage and the read reference voltage, the memory cell is determined to be a programmed memory cell.
3. The apparatus according to claim 1, wherein: the set value is "1".
4. The apparatus of any one of claims 1-3, wherein the input of the read comparator is connected to the drain of the memory cell and the drain of the read reference memory cell, respectively, the input of the verify comparator is connected to the drain of the memory cell and the drain of the verify reference memory cell, respectively,
the drain electrode of the memory cell is connected with the first resistor, the other end of the first resistor is connected with a power supply, and the source electrode of the memory cell is grounded;
the drain electrode of the reading reference unit is connected with a second resistor, the other end of the second resistor is connected with a power supply, and the source electrode of the reading reference unit is grounded;
the drain electrode of the verification reference unit is connected with a third resistor, the other end of the third resistor is connected with a power supply, and the source electrode of the verification reference unit is grounded.
5. A data reading method of a nonvolatile memory, performed by the data reading apparatus of the nonvolatile memory according to any one of claims 1 to 4, characterized in that the method comprises:
reading the cell voltage of the memory cell according to the received read request;
comparing the cell voltage with a read reference voltage by a read comparator to output a read result;
comparing the unit voltage with a verification reference voltage through a verification comparator to output a verification result;
if the storage unit is determined to be an offset storage unit when the unit voltage is higher than the set threshold value according to the reading result and the checking result, recording an offset unit address of the offset storage unit through an offset address recording unit;
and if the received read request hits the offset unit address, determining that the read result of the offset storage unit is a set value through a read correction unit.
6. The method of claim 5, wherein determining that the memory cell is an offset memory cell when the cell voltage is above the set threshold based on the read result and the verify result comprises:
if the cell voltage is greater than the verification reference voltage and less than the read reference voltage, determining that the memory cell is an offset memory cell;
if the cell voltage is less than the verification reference voltage and the read reference voltage, determining that the memory cell is an erased memory cell;
if the cell voltage is less than the verify reference voltage and the read reference voltage, the memory cell is determined to be a programmed memory cell.
7. The method of claim 5, wherein the set point is "1".
8. The method of claim 5, wherein the received read request is specifically: the gate of the memory cell, the gate of the read reference memory cell, and the gate of the verify memory cell apply a read voltage.
9. The method of claim 8, wherein the read voltage is 5V-8V in magnitude.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610574359.9A CN107633865B (en) | 2016-07-19 | 2016-07-19 | Data reading device and method of nonvolatile memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610574359.9A CN107633865B (en) | 2016-07-19 | 2016-07-19 | Data reading device and method of nonvolatile memory |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107633865A CN107633865A (en) | 2018-01-26 |
| CN107633865B true CN107633865B (en) | 2024-02-20 |
Family
ID=61113219
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610574359.9A Active CN107633865B (en) | 2016-07-19 | 2016-07-19 | Data reading device and method of nonvolatile memory |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107633865B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210066899A (en) | 2019-02-20 | 2021-06-07 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | A method for programming a memory system |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1464400A (en) * | 2002-06-18 | 2003-12-31 | 旺宏电子股份有限公司 | Memory read back device and reading method thereof |
| CN1591693A (en) * | 2003-04-29 | 2005-03-09 | 戴洛格半导体公司 | Flash memory with pre-detection for data loss |
| CN101178927A (en) * | 2006-11-06 | 2008-05-14 | 财团法人工业技术研究院 | Multistable sense amplifier applied to memory |
| CN102467967A (en) * | 2010-11-12 | 2012-05-23 | 上海复旦微电子股份有限公司 | Read circuit and read method for electrically erasable read-only memory |
| CN103092728A (en) * | 2013-01-22 | 2013-05-08 | 清华大学 | Recovery method and recovery device of abrasion errors of nonvolatile memory |
| CN103942119A (en) * | 2013-12-26 | 2014-07-23 | 杭州华为数字技术有限公司 | Method and device for processing memory errors |
| CN104681097A (en) * | 2013-11-27 | 2015-06-03 | 北京兆易创新科技股份有限公司 | Method for repairing nonvolatile memory |
| CN105097030A (en) * | 2014-04-25 | 2015-11-25 | 北京兆易创新科技股份有限公司 | Memorizer programming verification method and programming verification apparatus |
| CN105702292A (en) * | 2014-11-25 | 2016-06-22 | 北京兆易创新科技股份有限公司 | Data recovery method and apparatus for nonvolatile memory |
| CN206210398U (en) * | 2016-07-19 | 2017-05-31 | 北京兆易创新科技股份有限公司 | A kind of digital independent device of nonvolatile memory |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8737129B2 (en) * | 2008-11-14 | 2014-05-27 | Samsung Electronics Co., Ltd. | Nonvolatile memory device and read method thereof |
-
2016
- 2016-07-19 CN CN201610574359.9A patent/CN107633865B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1464400A (en) * | 2002-06-18 | 2003-12-31 | 旺宏电子股份有限公司 | Memory read back device and reading method thereof |
| CN1591693A (en) * | 2003-04-29 | 2005-03-09 | 戴洛格半导体公司 | Flash memory with pre-detection for data loss |
| CN101178927A (en) * | 2006-11-06 | 2008-05-14 | 财团法人工业技术研究院 | Multistable sense amplifier applied to memory |
| CN102467967A (en) * | 2010-11-12 | 2012-05-23 | 上海复旦微电子股份有限公司 | Read circuit and read method for electrically erasable read-only memory |
| CN103092728A (en) * | 2013-01-22 | 2013-05-08 | 清华大学 | Recovery method and recovery device of abrasion errors of nonvolatile memory |
| CN104681097A (en) * | 2013-11-27 | 2015-06-03 | 北京兆易创新科技股份有限公司 | Method for repairing nonvolatile memory |
| CN103942119A (en) * | 2013-12-26 | 2014-07-23 | 杭州华为数字技术有限公司 | Method and device for processing memory errors |
| CN105097030A (en) * | 2014-04-25 | 2015-11-25 | 北京兆易创新科技股份有限公司 | Memorizer programming verification method and programming verification apparatus |
| CN105702292A (en) * | 2014-11-25 | 2016-06-22 | 北京兆易创新科技股份有限公司 | Data recovery method and apparatus for nonvolatile memory |
| CN206210398U (en) * | 2016-07-19 | 2017-05-31 | 北京兆易创新科技股份有限公司 | A kind of digital independent device of nonvolatile memory |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107633865A (en) | 2018-01-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101891378B1 (en) | System and method of adjusting a programming step size for a block of a memory | |
| US9019770B2 (en) | Data reading method, and control circuit, memory module and memory storage apparatus and memory module using the same | |
| US9318215B2 (en) | Systems and methods to update reference voltages of non-volatile memory | |
| TWI541810B (en) | Data writing method, and memory controller and memory storage apparatus using the same | |
| US20150006983A1 (en) | Read voltage setting method, and control circuit, and memory storage apparatus using the same | |
| US20140226412A1 (en) | Data writing method, and memory control circuit unit and memory storage apparatus using the same | |
| US7551503B2 (en) | Method for refreshing a flash memory | |
| TWI479489B (en) | Data writing method, and memory controller and memory storage apparatus using the same | |
| CN101740122B (en) | Nonvolatile semiconductor storage device | |
| CN108766495B (en) | Data writing method, memory controller, and memory storage device | |
| CN104282339B (en) | Read voltage setting method, control circuit and memory storage device | |
| US8972653B2 (en) | Memory management method, and memory controller and memory storage apparatus using the same | |
| US8315107B2 (en) | Erase completion recognition | |
| US20130159798A1 (en) | Non-volatile memory device and operating method thereof | |
| EP3176790A2 (en) | Non-volatile memory (nvm) with endurance control | |
| US8830750B1 (en) | Data reading method, and control circuit, memory module and memory storage apparatus using the same | |
| US20150106667A1 (en) | Solid state storage device and controlling method thereof | |
| JP2012146129A (en) | Memory access control apparatus | |
| US10403379B1 (en) | Erased block reverification method for solid state storage device | |
| US8359427B2 (en) | Semiconductor device | |
| US20080181010A1 (en) | Flash memory and method for determining logic states thereof | |
| CN107633865B (en) | Data reading device and method of nonvolatile memory | |
| JP5280027B2 (en) | Semiconductor device and control method thereof | |
| TWI521525B (en) | Time estimating method, memory storage device, and memory controlling circuit unit | |
| CN106024062B (en) | Data reading device and method of nonvolatile memory |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: Room 101, Floor 1-5, Building 8, Yard 9, Fenghao East Road, Haidian District, Beijing 100094 Applicant after: Zhaoyi Innovation Technology Group Co.,Ltd. Address before: 100083 12 Floors, Block A, Tiangong Building, Science and Technology University, 30 College Road, Haidian District, Beijing Applicant before: GIGADEVICE SEMICONDUCTOR(BEIJING) Inc. |
|
| CB02 | Change of applicant information | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |