CN107610999B - Lower electrode mechanism and reaction chamber - Google Patents
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- 230000007246 mechanism Effects 0.000 title claims abstract description 44
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 20
- 230000008569 process Effects 0.000 claims abstract description 20
- 239000000945 filler Substances 0.000 claims description 13
- 238000007789 sealing Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 description 12
- 239000003990 capacitor Substances 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 2
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- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
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Abstract
The invention provides a lower electrode mechanism and a reaction chamber, which comprises a base, wherein an insulating ring is arranged between the base and the bottom wall of the chamber so as to form an equivalent capacitance between the edge area of the bottom surface of the base and the bottom wall of the chamber, and the equivalent capacitance is formed by parallel plate capacitances formed by filling at least two different media. The lower electrode mechanism provided by the invention can realize the adjustment of the capacitance to the ground of the lower electrode mechanism, so that the consistency of process equipment with the same model can meet the requirement.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a lower electrode mechanism and a reaction chamber.
Background
The plasma sources can be classified into capacitively coupled plasma sources (CCP), inductively coupled plasma sources (ICP) and microwave plasma sources (MP) according to the generation manner. Of the three types of plasma sources, an upper and a lower double electrode structure are generally used, wherein the upper electrode structure is used for generating plasma, such as a coil structure in an inductively coupled plasma source. The lower electrode mechanism is used for adjusting the uniformity of plasma distribution and the intensity of an electric field on the surface of the wafer so as to ensure that the deposition uniformity or etching rate, etching selection ratio and the like meet the process requirements.
Along with the higher and higher process precision requirements, the requirements on the consistency of process equipment with the same type are more and more severe in the mass production process, wherein the capacitance to ground of the lower electrode mechanism is one of key parameters affecting the process result, and the inconsistency of the capacitance to ground of a plurality of process equipment with the same type can directly affect the inconsistency of the process result.
The capacitance to ground of the lower electrode means is mainly the equivalent capacitance formed between the susceptor and the chamber wall of the reaction chamber located therebelow. The current lower electrode mechanism cannot adjust the equivalent capacitance, which causes the following problems: because the generation batches of a plurality of process equipment with the same model are different, and errors generated in the assembly process can lead to inconsistent capacitance to ground of a lower electrode mechanism in the plurality of process equipment, thereby causing inconsistent etching rate, etching uniformity distribution and the like, and further causing that the consistency of the process equipment with the same model can not meet the requirement.
Disclosure of Invention
The invention aims at solving at least one of the technical problems in the prior art, and provides a lower electrode mechanism and a reaction chamber, which can realize the adjustment of the capacitance of the lower electrode mechanism to the ground, so that the consistency of process equipment with the same model can meet the requirement.
The invention provides a lower electrode mechanism for realizing the purpose, which comprises a base, wherein an insulating ring is arranged between the base and the bottom wall of a cavity so as to form an equivalent capacitance between the edge area of the bottom surface of the base and the bottom wall of the cavity, and the equivalent capacitance is formed by parallel connection of parallel plate capacitances formed by filling at least two different media.
Preferably, the insulating ring comprises a ring body corresponding to a part of the edge area;
The radial width of the ring body meets the condition that the equivalent capacitance reaches a desired value.
Preferably, the number of the ring bodies is one, and the radial width of the ring bodies is smaller than the radial width of the edge area.
Preferably, the radial width of the ring body satisfies the following formula:
L＝(R-r)/4
Wherein L is the radial width of the ring body; r is the outer diameter of the edge region; r is the inner diameter of the edge region.
Preferably, the radial width of the ring body satisfies the following formula:
L＝(R-r)/2
Wherein L is the radial width of the ring body; r is the outer diameter of the edge region; r is the inner diameter of the edge region.
Preferably, the radial width of the ring body satisfies the following formula:
L＝3*(R-r)/4
Wherein L is the radial width of the ring body; r is the outer diameter of the edge region; r is the inner diameter of the edge region.
Preferably, the number of the ring bodies is at least two, and the ring bodies are concentric rings, and in each two adjacent ring bodies, the inner diameter of the ring body positioned on the outer side is equal to the outer diameter of the ring body positioned on the inner side;
the equivalent capacitance is made to reach an expected value by keeping the radial width of one ring constant and adjusting the radial width of the other ring.
Preferably, the number of the ring bodies is two, namely a first ring body and a second ring body positioned outside the first ring body,
The inner diameter of the first ring body is equal to the inner diameter of the edge area;
the inner diameter of the second ring body is equal to the outer diameter of the first ring body;
and setting the outer diameter of the second ring body to enable the equivalent capacitance to reach an expected value.
Preferably, the number of the ring bodies is two, namely a first ring body and a second ring body positioned on the inner side of the first ring body,
The outer diameter of the first ring body is equal to the outer diameter of the edge area;
the outer diameter of the second ring body is equal to the inner diameter of the first ring body;
and setting the inner diameter of the second ring body to enable the equivalent capacitance to reach an expected value.
Preferably, the number of the rings is three, namely a first ring body, a second ring body and a third ring body, wherein,
The central line of the first ring body coincides with the central line of the edge area;
the second ring body is positioned at the outer side of the first ring body, and the inner diameter of the second ring body is equal to the outer diameter of the first ring body;
the third ring body is positioned on the inner side of the first ring body, and the outer diameter of the third ring body is equal to the inner diameter of the first ring body;
and setting the outer diameter of the second ring body and the inner diameter of the third ring body respectively to enable the equivalent capacitance to reach an expected value.
Preferably, the insulating ring further comprises an upper connection ring and a lower connection ring, wherein,
The upper connecting ring is arranged between the top surface of the ring body and the bottom surface of the base; the upper connecting ring is fixedly connected with the base and the ring body respectively;
The lower connecting ring is arranged between the bottom surface of the ring body and the top surface of the bottom wall of the cavity; the lower connecting ring is fixedly connected with the bottom wall of the cavity and the ring body respectively.
Preferably, sealing rings are arranged between the upper connecting ring and the base, between the upper connecting ring and the ring body, between the lower connecting ring and the bottom wall of the chamber, and between the lower connecting ring and the ring body.
As another technical scheme, the invention also provides a reaction chamber, which comprises the lower electrode mechanism provided by the invention.
The invention has the following beneficial effects:
According to the lower electrode mechanism provided by the invention, the insulating ring is arranged between the base and the bottom wall of the chamber, so that an equivalent capacitance is formed between the edge area of the bottom surface of the base and the bottom wall of the chamber, the equivalent capacitance is formed by parallel connection of parallel plate capacitances formed by filling at least two different media, and the adjustment of the capacitance of the lower electrode mechanism to the ground can be realized by setting the quantity, the dielectric constant (i.e. the dielectric material) and the radial width of the media, so that the capacitance of the lower electrode mechanism of the process equipment with the same model to the ground is consistent, and the consistency of etching rate and etching uniformity distribution can be improved, so that the consistency of the process equipment with the same model can meet the requirements.
The reaction chamber provided by the invention can improve the uniformity of etching rate and etching uniformity distribution by adopting the lower electrode mechanism provided by the invention, so that the uniformity of process equipment with the same model can meet the requirement.
Drawings
FIG. 1A is a block diagram of a lower electrode mechanism according to a first embodiment of the present invention;
FIG. 1B is a bottom view of the ring body in a first embodiment of the invention;
FIG. 1C is a diagram of capacitance equivalent of a ferrule;
FIG. 1D is a diagram of the capacitance equivalent of another ring body;
FIG. 2A is a bottom view of a ring body according to a second embodiment of the present invention;
FIG. 2B is a bottom view of another ring body according to the second embodiment of the present invention;
FIG. 2C is a bottom view of yet another ring body according to the second embodiment of the present invention;
FIG. 3A is a block diagram of a lower electrode mechanism according to a third embodiment of the present invention;
FIG. 3B is an enlarged view of region I of FIG. 3A;
FIG. 3C is a top view of a ring in a third embodiment of the present invention;
FIG. 3D is a top view of an upper attachment ring according to a third embodiment of the present invention;
fig. 4 is a cross-sectional view of a reaction chamber provided by the present invention.
Detailed Description
In order to better understand the technical scheme of the present invention, the following describes the lower electrode mechanism and the reaction chamber provided by the present invention in detail with reference to the accompanying drawings.
Referring to fig. 1A and fig. 1B together, a first embodiment of the present invention provides a bottom electrode mechanism, which includes a base 1, and an insulating ring 3 disposed between the base 1 and a bottom wall 2 of a chamber, so as to form an equivalent capacitance between an edge area 11 of a bottom surface of the base 1 and the bottom wall 2 of the chamber, wherein the equivalent capacitance is a capacitance to ground of the bottom electrode mechanism.
And the equivalent capacitance is formed by parallel plate capacitance formed by filling at least two different media. The adjustment of the capacitance to ground of the lower electrode mechanism can be realized by setting the quantity, dielectric constant (namely dielectric material) and radial width of the dielectric, so that the capacitance to ground of the lower electrode mechanism of the process equipment with the same model is consistent, the consistency of etching rate and etching uniformity distribution can be improved, and the consistency of the process equipment with the same model can meet the requirement.
In the present embodiment, the insulating ring 3 comprises a ring body corresponding to a portion of the edge region 11. Specifically, as shown in fig. 1B, the ring body is one, and the radial width L of the ring body is smaller than the radial width (R-R)/2 of the edge region 11, and the space between the rest of the edge region 11 except the corresponding ring body and the bottom wall 2 of the chamber, that is, the process environment (typically vacuum) in the chamber. The ring body not only acts as a support base 1, but also as a dielectric filler material between the parallel plate capacitance formed by the base 1 and the chamber bottom wall 2 to increase the capacitance value of the parallel plate capacitance. Since the ring body corresponds to only a part of the edge area 11, the area where the ring body is positioned is filled with the parallel plate capacitor with the filler as a medium, and the rest area forms the parallel plate capacitor with the filler as a vacuum, and the two parallel plate capacitors are connected in parallel. Therefore, the adjustment of the capacitance to ground of the lower electrode mechanism can be realized by setting the radial width of the ring body.
The radial width of the ring body meets the condition that the equivalent capacitance reaches an expected value, namely, the adjustment of the capacitance to the ground of the lower electrode mechanism can be realized by setting different radial widths of the ring body.
As shown in fig. 1C, if the radial width of the ring body is identical to the radial width of the edge region 11, a parallel plate capacitor C with the filler being an insulating medium 31 is formed. The parallel plate capacitance C is equal to:
Where ε r is the relative permittivity of the insulating medium 31, e.g. ceramic 9.8; epsilon 0 is the vacuum dielectric constant. R is the outer diameter of the edge region 11; r is the inner diameter of the edge region 11; d is the spacing of the parallel plate capacitances.
As shown in fig. 1D, if the radial width L of the ring body is smaller than the radial width (R-R)/2 of the edge region 11, assuming that the ring body corresponds to the middle region of the edge region 11, two parallel plate capacitances with vacuum fillers and one parallel plate capacitance with insulating medium 32 fillers are formed. The total parallel capacitance Cr is equal to:
Cr＝C1+C2+C3
Wherein, C 1 and C 3 are parallel plate capacitors with two fillers in vacuum; c 2 is the parallel plate capacitance of the dielectric 32 filled.
Parallel plate capacitance C 1 with one filler in vacuum is equal to:
parallel plate capacitance C 3, where the other fill is vacuum, is equal to:
Parallel plate capacitance C 2 for the filler insulating medium 32 is equal to:
From the above, it can be seen that the parallel plate capacitance C of the dielectric 31 alone of the filler is different from the parallel plate capacitance Cr of the vacuum and dielectric 32 of the filler. Therefore, the size of the equivalent capacitance can be adjusted by changing the radial width of the ring body.
For example, the radial width of the ring body satisfies the following formula:
L＝(R-r)/4
Assuming that the inner diameter R of the edge region 11 is approximately 3/4 of its outer diameter R, it can be estimated that: the parallel plate capacitance Cr of the fill with vacuum and insulating medium 32 is 28.23% of the parallel plate capacitance C of the fill with insulating medium 31 only.
As another example, the radial width of the ring body satisfies the following formula:
L＝(R-r)/2
assuming that the inner diameter R of the edge region 11 is approximately 3/4 of its outer diameter R, it can be estimated that: the parallel plate capacitance Cr of the fill with vacuum and insulating medium 32 is 50.73% of the parallel plate capacitance C of the fill with insulating medium 31 only.
For another example, the radial width of the ring body satisfies the following formula:
L＝3*(R-r)/4
Assuming that the inner diameter R of the edge region 11 is approximately 3/4 of its outer diameter R, it can be estimated that: the parallel plate capacitance Cr of the fill with vacuum and insulating medium 32 is 77.06% of the parallel plate capacitance C of the fill with insulating medium 31 only.
From this, the larger the radial width L of the ring body, the larger the parallel plate capacitance Cr; conversely, the smaller the radial width L of the ring body, the smaller the parallel plate capacitance Cr.
In the present embodiment, the middle area of the ring body corresponding to the edge area 11, but the present invention is not limited thereto, and in practical application, the area of the ring body corresponding to the edge area 11 near the outer edge or the inner edge, or the outer diameter of the ring body may be equal to the outer diameter of the edge area 11; or the inner diameter of the ring body is equal to the inner diameter of the rim area 11.
The second embodiment of the present invention provides a lower electrode mechanism, which differs from the first embodiment described above only in that: the number and arrangement of the ring bodies are different.
Specifically, the number of the ring bodies can be at least two, and the ring bodies are concentric rings, and in each two adjacent ring bodies, the inner diameter of the ring body positioned at the outer side is equal to the outer diameter of the ring body positioned at the inner side; the equivalent capacitance reaches the expected value by keeping the radial width of one ring body unchanged and adjusting the radial width of the other ring bodies, so that the adjustment difficulty can be reduced.
In this embodiment, as shown in fig. 2A, there are two rings, namely, a first ring 3 and a second ring 4 located outside thereof, wherein the inner diameter of the first ring 3 is equal to the inner diameter r of the edge region 11. The inner diameter of the second ring body 4 is equal to the outer diameter of the first ring body 3. In this case, the magnitude of the equivalent capacitance can be adjusted in such a manner that the equivalent capacitance reaches a desired value by setting the outer diameter of the second ring body 4. Further, the radial width of the first ring body 3 is constant. On the basis, if the outer diameters of the second ring bodies 4 are set to be different, the radial width L1 of the second ring body 4 is changed, that is, the larger the outer diameter of the second ring body 4 is, the larger the radial width L1 of the second ring body 4 is, and thus the sum of the radial widths of the first ring body 3 and the second ring body 4 is larger; conversely, the smaller the outer diameter of the second ring body 4, the smaller the radial width L1 of the second ring body 4, and thus the smaller the sum of the radial widths of the first ring body 3 and the second ring body 4. Therefore, the adjustment of the equivalent capacitance can be realized by only setting the outer diameter of the second ring body 4, so that the adjustment difficulty can be reduced.
Similar to the above-mentioned manner of adjusting the size of the equivalent capacitance, as shown in fig. 2B, there are two rings, namely, a first ring 3 and a second ring 4 located inside thereof, wherein the outer diameter of the first ring 3 is equal to the outer diameter R of the edge region 11. The outer diameter of the second ring body 4 is equal to the inner diameter of the first ring body 3. In this case, the magnitude of the equivalent capacitance may be adjusted in such a manner that the equivalent capacitance reaches a desired value by setting the inner diameter of the second ring body 4. Further, the radial width of the first ring body 3 is constant. On the basis, if the inner diameters of the second ring bodies 4 are set to be different, the radial width L1 of the second ring bodies 4 is changed, that is, the smaller the inner diameter of the second ring body 4 is, the larger the radial width L1 of the second ring body 4 is, and thus the sum of the radial widths of the first ring body 3 and the second ring body 4 is larger; conversely, the larger the inner diameter of the second ring body 4, the smaller the radial width L1 of the second ring body 4, and thus the smaller the sum of the radial widths of the first ring body 3 and the second ring body 4. Therefore, the adjustment of the equivalent capacitance can be realized by only setting the inner diameter of the second ring body 4, so that the adjustment difficulty can be reduced.
Similar to the above manner of adjusting the size of the equivalent capacitance, as shown in fig. 2C, there are three rings, namely, a first ring 3, a second ring 4 and a third ring 5, where the center line of the first ring 3 coincides with the center line of the edge area 11; the second ring body 4 is positioned outside the first ring body 3, and the inner diameter of the second ring body 4 is equal to the outer diameter of the first ring body 3; the third ring body 5 is located inside the first ring body 3, and the outer diameter of the third ring body 3 is equal to the inner diameter of the first ring body 3. In this case, the magnitude of the equivalent capacitance may be adjusted in such a manner that the equivalent capacitance reaches a desired value by setting the outer diameter of the second ring body 4 and the inner diameter of the third ring body 5, respectively. Further, the radial width of the first ring body 3 is constant. On the basis, the larger the outer diameter of the second ring body 4, the smaller the inner diameter of the third ring body 5, the larger the radial width L1 of the second ring body 4, and the larger the radial width L2 of the third ring body 5, so that the sum of the radial widths of the first ring body 3, the second ring body 4 and the third ring body 5 is larger; conversely, the smaller the outer diameter of the second ring body 4, the larger the inner diameter of the third ring body 5, the smaller the radial width L1 of the second ring body 4, and the smaller the radial width L2 of the third ring body 5, and thus the smaller the sum of the radial widths of the first ring body 3, the second ring body 4, and the third ring body 5. Therefore, the adjustment of the equivalent capacitance can be realized by only setting the outer diameter of the second ring body 4 and the inner diameter of the third ring body 5 respectively, so that the adjustment difficulty can be reduced.
Of course, in practical application, any other way of changing the radial width of the ring body may be used to realize adjustment of the equivalent capacitance.
Referring to fig. 3A to 3D, in addition to the first and second embodiments, the insulating ring further includes an upper connecting ring 4 and a lower connecting ring 5, so as to facilitate installation of the ring body.
Specifically, the upper connecting ring 4 is disposed between the top surface of the ring body and the bottom surface of the base 1, and the upper connecting ring 4 is fixedly connected with the base 1 and the ring body, respectively. Wherein a plurality of coupling holes 41 are provided at positions of the upper coupling ring 4 near the outer edge for fixedly coupling the upper coupling ring 4 with the base 1 by means of screws. A plurality of connection holes 42 are provided at appropriate positions of the upper connection ring 4 opposite to the ring body, and a plurality of screw holes 301 are provided on a surface of the ring body opposite to the upper connection ring 4 for fixedly connecting the upper connection ring 4 with the ring body by screws.
The lower connecting ring 5 is arranged between the bottom surface of the ring body and the top surface of the chamber bottom wall 2, and the lower connecting ring 5 is fixedly connected with the chamber bottom wall 2 and the ring body respectively. Wherein a plurality of connection holes 51 are provided at positions of the lower connection ring 5 near the outer edge for fixedly connecting the lower connection ring 5 with the chamber bottom wall 2 by screws. A plurality of connection holes 52 are provided at appropriate positions of the lower connection ring 5 opposite to the ring body, and a plurality of screw holes 301 are provided on a surface of the ring body opposite to the lower connection ring 5 for fixedly connecting the lower connection ring 5 with the ring body by screws.
In order to achieve a seal, sealing rings are provided between the upper connecting ring 4 and the base 1, between the upper connecting ring 4 and the ring body, between the lower connecting ring 5 and the chamber bottom wall 2, and between the lower connecting ring 5 and the ring body. Specifically, an annular recessed channel 302 for mounting the seal ring may be provided on the surface of the ring body opposite to the upper connecting ring 4 and the lower connecting ring 5, respectively; an annular concave channel 43 for installing a sealing ring is arranged on the surface of the upper connecting ring 4 opposite to the base 1 and the ring body respectively; and an annular recessed channel 53 for mounting a seal ring is provided on the surface of the lower connecting ring 5 opposite the chamber bottom wall 2 and the ring body, respectively.
As another aspect, as shown in fig. 4, an embodiment of the present invention further provides a reaction chamber 100, which includes the lower electrode mechanism provided in each of the above embodiments of the present invention.
In the present embodiment, the lower electrode mechanism includes a base 101, and a focus ring 102, a base ring 103, a spacer ring 104, and an insulating ring 105 are provided in this order from top to bottom around the base 101. Furthermore, the bottom wall of the chamber below the bottom surface of the susceptor 101 forms an equivalent capacitance between the bottom surface of the susceptor 101 and the bottom chamber wall.
The reaction chamber provided by the embodiment of the invention can improve the uniformity of etching rate and etching uniformity distribution by adopting the lower electrode mechanism provided by the embodiments of the invention, so that the uniformity of process equipment with the same model can meet the requirement.
It is to be understood that the above embodiments are merely illustrative of the application of the principles of the present invention, but not in limitation thereof. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the invention, and are also considered to be within the scope of the invention.
Claims (13)
1. The lower electrode mechanism comprises a base, an insulating ring is arranged between the base and the bottom wall of a cavity so as to form an equivalent capacitance between the edge area of the bottom surface of the base and the bottom wall of the cavity, and the lower electrode mechanism is characterized in that the equivalent capacitance is formed by parallel plate capacitances formed by filling at least two different media;
The insulating ring comprises a ring body corresponding to a part of the edge area, the equivalent capacitance is formed by parallel plate capacitance with the filler formed in the area where the ring body is located as a medium and parallel plate capacitance with the filler formed in the other area as vacuum, and the process equipment with the same model has consistency by adjusting the equivalent capacitance.
2. The lower electrode mechanism of claim 1, wherein the radial width of the ring body satisfies a condition that the equivalent capacitance reaches a desired value.
3. The lower electrode mechanism of claim 2, wherein the ring body is one and the radial width of the ring body is less than the radial width of the edge region.
4. A lower electrode mechanism according to claim 3, wherein the radial width of the ring body satisfies the following formula:
L=（R-r）/4
Wherein L is the radial width of the ring body; r is the outer diameter of the edge region; r is the inner diameter of the edge region.
5. A lower electrode mechanism according to claim 3, wherein the radial width of the ring body satisfies the following formula:
L=（R-r）/2
Wherein L is the radial width of the ring body; r is the outer diameter of the edge region; r is the inner diameter of the edge region.
6. A lower electrode mechanism according to claim 3, wherein the radial width of the ring body satisfies the following formula:
L=3*（R-r）/4
Wherein L is the radial width of the ring body; r is the outer diameter of the edge region; r is the inner diameter of the edge region.
7. The lower electrode mechanism according to claim 2, wherein the number of the ring bodies is at least two, and are concentric rings with each other, and in each adjacent two of the ring bodies, an inner diameter of the ring body located on the outer side is equal to an outer diameter of the ring body located on the inner side;
the equivalent capacitance is made to reach an expected value by keeping the radial width of one ring constant and adjusting the radial width of the other ring.
8. The lower electrode mechanism according to claim 7, wherein the number of the ring members is two, a first ring member and a second ring member located outside thereof, respectively, wherein,
The inner diameter of the first ring body is equal to the inner diameter of the edge area;
the inner diameter of the second ring body is equal to the outer diameter of the first ring body;
and setting the outer diameter of the second ring body to enable the equivalent capacitance to reach an expected value.
9. The lower electrode mechanism according to claim 7, wherein the number of the ring members is two, a first ring member and a second ring member located inside thereof, respectively, wherein,
The outer diameter of the first ring body is equal to the outer diameter of the edge area;
the outer diameter of the second ring body is equal to the inner diameter of the first ring body;
and setting the inner diameter of the second ring body to enable the equivalent capacitance to reach an expected value.
10. The lower electrode mechanism according to claim 7, wherein the number of the ring members is three, namely a first ring member, a second ring member and a third ring member,
The central line of the first ring body coincides with the central line of the edge area;
the second ring body is positioned at the outer side of the first ring body, and the inner diameter of the second ring body is equal to the outer diameter of the first ring body;
the third ring body is positioned on the inner side of the first ring body, and the outer diameter of the third ring body is equal to the inner diameter of the first ring body;
and setting the outer diameter of the second ring body and the inner diameter of the third ring body respectively to enable the equivalent capacitance to reach an expected value.
11. The lower electrode mechanism as claimed in any one of claims 1 to 10, wherein the insulating ring further comprises an upper connecting ring and a lower connecting ring, wherein,
The upper connecting ring is arranged between the top surface of the ring body and the bottom surface of the base; the upper connecting ring is fixedly connected with the base and the ring body respectively;
The lower connecting ring is arranged between the bottom surface of the ring body and the top surface of the bottom wall of the cavity; the lower connecting ring is fixedly connected with the bottom wall of the cavity and the ring body respectively.
12. The lower electrode mechanism of claim 11, wherein sealing rings are provided between the upper connecting ring and the base, between the upper connecting ring and the ring body, between the lower connecting ring and the chamber bottom wall, and between the lower connecting ring and the ring body.
13. A reaction chamber comprising a lower electrode arrangement according to any one of claims 1 to 12.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710749263.6A CN107610999B (en) | 2017-08-28 | 2017-08-28 | Lower electrode mechanism and reaction chamber |
| TW107129024A TWI725336B (en) | 2017-08-28 | 2018-08-20 | Lower electrode assembly and process chamber |
| PCT/CN2018/101340 WO2019042179A1 (en) | 2017-08-28 | 2018-08-20 | Lower electrode assembly and process chamber |
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| CN107610999A CN107610999A (en) | 2018-01-19 |
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| WO2019042179A1 (en) * | 2017-08-28 | 2019-03-07 | 北京北方华创微电子装备有限公司 | Lower electrode assembly and process chamber |
| CN107610999B (en) * | 2017-08-28 | 2024-08-23 | 北京北方华创微电子装备有限公司 | Lower electrode mechanism and reaction chamber |
| KR102077974B1 (en) * | 2019-08-29 | 2020-02-14 | 주식회사 기가레인 | Plasma treatment device including a focus ring with improved plasma treatment vertical angle |
| CN114203514A (en) * | 2021-12-14 | 2022-03-18 | 拓荆科技股份有限公司 | Wafer support base and process chamber |
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| CN207542191U (en) * | 2017-08-28 | 2018-06-26 | 北京北方华创微电子装备有限公司 | Bottom electrode mechanism and reaction chamber |
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| US8012306B2 (en) * | 2006-02-15 | 2011-09-06 | Lam Research Corporation | Plasma processing reactor with multiple capacitive and inductive power sources |
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| CN107610999A (en) | 2018-01-19 |
| TWI725336B (en) | 2021-04-21 |
| TW201913710A (en) | 2019-04-01 |
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