CN107610999A - Bottom electrode mechanism and reaction chamber - Google Patents
Bottom electrode mechanism and reaction chamber Download PDFInfo
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- CN107610999A CN107610999A CN201710749263.6A CN201710749263A CN107610999A CN 107610999 A CN107610999 A CN 107610999A CN 201710749263 A CN201710749263 A CN 201710749263A CN 107610999 A CN107610999 A CN 107610999A
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- 239000003990 capacitor Substances 0.000 claims abstract description 30
- 238000007789 sealing Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 abstract description 18
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- 230000001568 sexual effect Effects 0.000 abstract description 6
- 239000000945 filler Substances 0.000 description 18
- 238000005530 etching Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 2
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Abstract
The present invention provides a kind of bottom electrode mechanism and reaction chamber, it includes pedestal, dead ring is provided between pedestal and chamber bottom, to form equivalent capacity between the fringe region and chamber bottom of the bottom surface of pedestal, the equivalent capacity is filled the parallel plate capacitor formed by least two different mediums and is formed in parallel.Bottom electrode mechanism provided by the invention, it is possible to achieve the regulation to bottom electrode mechanism direct-to-ground capacitance, so as to so that the consistent sexual satisfaction requirement of model identical process equipment.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, in particular it relates to a kind of bottom electrode mechanism and reaction chamber.
Background technology
Plasma source can be divided into capacitively coupled plasma source (CCP) according to the difference of producing method, inductively
Plasma source (ICP) and microwave plasma source (MP).In above-mentioned three kinds of plasma sources, typically all using upper and lower double
Electrode structure, wherein, Top electrode mechanism is used to produce the loop construction in plasma, such as inductively coupled plasma source.
Bottom electrode mechanism is used for the uniformity of plasma distribution and the size of electric-field intensity for adjusting wafer surface, to ensure that deposition is equal
Even property or etch rate, etching selection ratio etc. meet technological requirement.
, will to the uniformity of model identical process equipment during volume production as craft precision requires more and more higher
Ask increasingly harsher, wherein, bottom electrode mechanism direct-to-ground capacitance is exactly to influence one of key parameter of process results, model identical
The direct-to-ground capacitance of multiple process equipments is inconsistent, and to directly influence process results inconsistent.
Bottom electrode mechanism direct-to-ground capacitance is primarily referred to as the shape between the chamber wall of pedestal and the reaction chamber being disposed below
Into equivalent capacity.The equivalent capacity can not be adjusted for current bottom electrode mechanism, and this can produce following problem：Due to type
The generation batch of number multiple process equipments of identical is different, and caused error can cause multiple techniques to set in assembling process
Standby middle bottom electrode mechanism direct-to-ground capacitance is inconsistent, inconsistent etc. so as to cause etch rate, etching homogeneity to be distributed, and in turn results in
The uniformity of model identical process equipment is unable to reach requirement.
The content of the invention
It is contemplated that at least solve one of technical problem present in prior art, it is proposed that a kind of bottom electrode mechanism and
Reaction chamber, it can realize the regulation to bottom electrode mechanism direct-to-ground capacitance, so as to so that model identical process equipment
Consistent sexual satisfaction requirement.
To realize that the purpose of the present invention provides a kind of bottom electrode mechanism, including pedestal, in the pedestal and the chamber
Dead ring is provided between bottom wall, to form equivalent electric between the fringe region of the bottom surface of the pedestal and the chamber bottom
Hold, the equivalent capacity is filled the parallel plate capacitor formed by least two different mediums and is formed in parallel.
Preferably, the dead ring includes the ring body of corresponding a part of fringe region；
The radial width of the ring body meets the condition for making the equivalent capacity reach desired value.
Preferably, the ring body is one, and the radial width of the ring body is less than the radial width of the fringe region.
Preferably, the radial width of the ring body meets following formula：
L=(R-r)/4
Wherein, L is the radial width of the ring body；R is the external diameter of the fringe region；R is the interior of the fringe region
Footpath.
Preferably, the radial width of the ring body meets following formula：
L=(R-r)/2
Wherein, L is the radial width of the ring body；R is the external diameter of the fringe region；R is the interior of the fringe region
Footpath.
Preferably, the radial width of the ring body meets following formula：
L=3* (R-r)/4
Wherein, L is the radial width of the ring body；R is the external diameter of the fringe region；R is the interior of the fringe region
Footpath.
Preferably, the ring body is at least two, and concentric ring each other, and in each two adjacent ring bodies
In, the internal diameter positioned at the ring body in outside is equal with the external diameter of the ring body positioned at inner side；
By making the radial width of one of them ring body constant, and the radial width of remaining ring body is adjusted, come
The equivalent capacity is set to reach desired value.
Preferably, the ring body is two, respectively the first ring body and the second ring body on the outside of it, wherein,
The internal diameter of first ring body is equal with the internal diameter of the fringe region；
The internal diameter of second ring body is equal with the external diameter of first ring body；
By setting the external diameter of second ring body, to make the equivalent capacity reach desired value.
Preferably, the ring body is two, respectively the first ring body and the second ring body on its inside, wherein,
The external diameter of first ring body is equal with the external diameter of the fringe region；
The external diameter of second ring body is equal with the internal diameter of first ring body；
By setting the internal diameter of second ring body, to make the equivalent capacity reach desired value.
Preferably, the ring body is three, respectively the first ring body, the second ring body and the 3rd ring body, wherein,
The center line of first ring body overlaps with the center line of the fringe region；
Second ring body is located at the outside of first ring body, and the internal diameter of second ring body and first ring body
External diameter it is equal；
3rd ring body is located at the inner side of first ring body, and the external diameter of the 3rd ring body and first ring body
Internal diameter it is equal；
By setting the external diameter of second ring body and the internal diameter of the 3rd ring body respectively, reach the equivalent capacity
To desired value.
Preferably, the dead ring also includes upper connection ring and lower connection ring, wherein,
The upper connection ring is arranged between the top surface of the ring body and the bottom surface of the pedestal；The upper connection ring difference
It is fixedly connected with the pedestal and the ring body；
The lower connection ring is arranged between the bottom surface of the ring body and the top surface of the chamber bottom；The lower connection ring
It is fixedly connected respectively with the chamber bottom and the ring body.
Preferably, on described between connection ring and the pedestal, on described between connection ring and the ring body, in institute
State between lower connection ring and the chamber bottom, and sealing ring is provided between the lower connection ring and the ring body.
As another technical scheme, the present invention also provides a kind of reaction chamber, including above-mentioned lower electricity provided by the invention
Pole mechanism.
The invention has the advantages that：
Bottom electrode mechanism provided by the invention, it is provided with dead ring between pedestal and chamber bottom, with pedestal
Equivalent capacity is formed between the fringe region and chamber bottom of bottom surface, the equivalent capacity is filled by least two different mediums and formed
Parallel plate capacitor be formed in parallel, by setting quantity, dielectric constant (i.e. dielectric material) and the radial width of medium, Ke Yishi
Now to the regulation of bottom electrode mechanism direct-to-ground capacitance, so that the bottom electrode mechanism direct-to-ground capacitance of model identical process equipment is consistent,
So as to improve etch rate, etching homogeneity distribution uniformity, so as to so that model identical process equipment one
Cause sexual satisfaction requirement.
Reaction chamber provided by the invention, it can improve quarter by using above-mentioned bottom electrode mechanism provided by the invention
Speed, the uniformity of etching homogeneity distribution are lost, so as to so that the consistent sexual satisfaction requirement of model identical process equipment.
Brief description of the drawings
Figure 1A is the structure chart for the bottom electrode mechanism that first embodiment of the invention provides；
Figure 1B is the upward view of ring body in first embodiment of the invention；
Fig. 1 C are a kind of capacitor equivalent figure of ring body；
Fig. 1 D are the capacitor equivalent figure of another ring body；
Fig. 2A is a kind of upward view of ring body in second embodiment of the invention；
Fig. 2 B are the upward view of another ring body in second embodiment of the invention；
Fig. 2 C are the upward view of another ring body in second embodiment of the invention；
Fig. 3 A are the structure chart for the bottom electrode mechanism that third embodiment of the invention provides；
Fig. 3 B are the enlarged drawing in I regions in Fig. 3 A；
Fig. 3 C are the top view of ring body in third embodiment of the invention；
Fig. 3 D are the top view of upper connection ring in third embodiment of the invention；
Fig. 4 is the sectional view of reaction chamber provided by the invention.
Embodiment
To make those skilled in the art more fully understand technical scheme, come below in conjunction with the accompanying drawings to the present invention
The bottom electrode mechanism and reaction chamber of offer are described in detail.
Also referring to Figure 1A and Figure 1B, first embodiment of the invention provides a kind of bottom electrode mechanism, and it includes pedestal 1,
Dead ring 3 is provided between the pedestal 1 and chamber bottom 2, with the fringe region 11 of the bottom surface of pedestal 1 and chamber bottom 2
Between form equivalent capacity, the equivalent capacity is bottom electrode mechanism direct-to-ground capacitance.
Also, equivalent capacity is filled the parallel plate capacitor formed by least two different mediums and is formed in parallel.Pass through setting
Quantity, dielectric constant (i.e. dielectric material) and the radial width of medium, it is possible to achieve the regulation to bottom electrode mechanism direct-to-ground capacitance,
So that the bottom electrode mechanism direct-to-ground capacitance of model identical process equipment is consistent, it is uniform so as to improve etch rate, etching
Property distribution uniformity, so as to so that model identical process equipment consistent sexual satisfaction requirement.
In the present embodiment, dead ring 3 includes the ring body of corresponding a part of fringe region 11.Specifically, as shown in Figure 1B,
Ring body is one, and the radial width L of the ring body is less than the radial width (R-r)/2 of above-mentioned fringe region 11, fringe region 11
The space between remainder and chamber bottom 2 in addition to corresponding ring body, i.e., the process environments (being typically vacuum) in chamber.
The ring body not only acts as the effect of support pedestal 1, while as between pedestal 1 and the parallel plate capacitor of the formation of chamber bottom 2
Dielectric fill material, to increase the capacitance of the parallel plate capacitor.Because ring body only corresponds to a part of fringe region 11, this makes
The parallel plate capacitor that ring body region filler is medium is obtained, remaining region forms the parallel-plate electricity that filler is vacuum
Hold, the two parallel plate capacitors are parallel with one another.Thus, by setting the radial width of ring body, it is possible to achieve to bottom electrode mechanism
The regulation of direct-to-ground capacitance.
Also, the radial width of above-mentioned ring body meets to make above-mentioned equivalent capacity reach the condition of desired value, that is, passes through setting
The radial width of different ring bodies, it is possible to achieve the regulation to bottom electrode mechanism direct-to-ground capacitance.
As shown in Figure 1 C, if the radial width of ring body is consistent with the radial width of fringe region 11, forming filler is
The parallel plate capacitor C of dielectric 31.Parallel plate capacitor C is equal to：
Wherein, εrFor the relative dielectric constant of dielectric 31, such as ceramics are 9.8；ε0For permittivity of vacuum.R is side
The external diameter in edge region 11；R is the internal diameter of fringe region 11；D is the spacing of parallel plate capacitor.
As shown in figure iD, if the radial width L of ring body is less than the radial width (R-r)/2 of above-mentioned fringe region 11, it is assumed that
The intermediate region in ring body corresponding edge region 11, then form two fillers parallel with one another be vacuum parallel plate capacitor and
One filler is the parallel plate capacitor of dielectric 32.Total parallel capacitance Cr is equal to：
Cr=C1+C2+C3
Wherein, C1And C3For the parallel plate capacitor that two fillers are vacuum；C2It is the parallel of dielectric 32 for filler
Plate electric capacity.
One of filler is the parallel plate capacitor C of vacuum1It is equal to：
Other in which filler is the parallel plate capacitor C of vacuum3It is equal to：
Filler is the parallel plate capacitor C of dielectric 322It is equal to：
From the foregoing, it will be observed that filler only has the parallel plate capacitor C of dielectric 31 and filler to have vacuum and dielectric 32
Parallel plate capacitor Cr it is of different sizes.Therefore, by changing the radial width of ring body, the big of above-mentioned equivalent capacity can be adjusted
It is small.
For example, the radial width of ring body meets following formula：
L=(R-r)/4
Assuming that the internal diameter r of fringe region 11 is about the 3/4 of its external diameter R, it is estimated that：Filler has vacuum and insulation
The parallel plate capacitor Cr of medium 32 is the 28.23% of the parallel plate capacitor C that filler only has dielectric 31.
And for example, the radial width of ring body meets following formula：
L=(R-r)/2
Assuming that the internal diameter r of fringe region 11 is about the 3/4 of its external diameter R, it is estimated that：Filler has vacuum and insulation
The parallel plate capacitor Cr of medium 32 is the 50.73% of the parallel plate capacitor C that filler only has dielectric 31.
For another example, the radial width of ring body meets following formula：
L=3* (R-r)/4
Assuming that the internal diameter r of fringe region 11 is about the 3/4 of its external diameter R, it is estimated that：Filler has vacuum and insulation
The parallel plate capacitor Cr of medium 32 is the 77.06% of the parallel plate capacitor C that filler only has dielectric 31.
It follows that the radial width L of ring body is bigger, then parallel plate capacitor Cr is bigger；Conversely, the radial width L of ring body
Smaller, then parallel plate capacitor Cr is smaller.
It should be noted that in the present embodiment, the intermediate region in ring body corresponding edge region 11, but the present invention is not
This is confined to, in actual applications, the close outward flange in ring body corresponding edge region 11 or the region of inward flange can also be made,
Or the external diameter of ring body is equal to the external diameter of fringe region 11；Or the internal diameter of ring body is equal to the internal diameter of fringe region 11.
The bottom electrode mechanism that second embodiment of the invention provides, compared with above-mentioned first embodiment, it is differed only in for it：
The quantity of ring body is different with set-up mode.
Specifically, ring body can also be at least two, and concentric ring each other, and in each two adjacent ring bodies,
Internal diameter positioned at the ring body in outside is equal with the external diameter of the ring body positioned at inner side；By making the radial width of one of ring body not
Become, and adjust the radial width of remaining ring body, to make equivalent capacity reach desired value, so as to reduce regulation difficulty.
In the present embodiment, as shown in Figure 2 A, ring body is two, respectively the first ring body 3 and second on the outside of it
Ring body 4, wherein, the internal diameter of the first ring body 3 is equal with the internal diameter r of fringe region 11.The internal diameter of second ring body 4 and the first ring body 3
External diameter it is equal.In such a case, it is possible to the size of equivalent capacity is adjusted using following manner, i.e. by setting the second ring
The external diameter of body 4, to make equivalent capacity reach desired value.Furtherly, the radial width of the first ring body 3 is changeless.
On the basis of this, the external diameter of the second ring body 4 of setting is different, then the radial width L1 of the second ring body 4 can change, i.e. the second ring body 4
External diameter it is bigger, then the radial width L1 of the second ring body 4 is bigger, so as to the radial width sum of the first ring body 3 and the second ring body 4
It is bigger；Conversely, the external diameter of the second ring body 4 is smaller, then the radial width L1 of the second ring body 4 is smaller, so as to the first ring body 3 and second
The radial width sum of ring body 4 is smaller.Therefore, the external diameter only by setting the second ring body 4, you can realize the tune to equivalent capacity
Section, so as to reduce regulation difficulty.
Similar with the mode of the size of above-mentioned regulation equivalent capacity, as shown in Figure 2 B, ring body is two, respectively the
One ring body 3 and the second ring body 4 on its inside, wherein, the external diameter of the first ring body 3 is equal with the external diameter R of fringe region 11.The
The external diameter of two ring bodies 4 is equal with the internal diameter of the first ring body 3.In such a case, it is possible to equivalent capacity is adjusted using following manner
Size, i.e. by set the second ring body 4 internal diameter, to make equivalent capacity reach desired value.Furtherly, first ring body 3
Radial width is changeless.On this basis, the internal diameter of the second ring body 4 of setting is different, then the second ring body 4 is radially-wide
Degree L1 can change, i.e. the internal diameter of the second ring body 4 is smaller, then the radial width L1 of the second ring body 4 is bigger, so as to the He of the first ring body 3
The radial width sum of second ring body 4 is bigger；Conversely, the internal diameter of the second ring body 4 is bigger, then the radial width L1 of the second ring body 4
It is smaller, so as to which the radial width sum of the first ring body 3 and the second ring body 4 is smaller.Therefore, only by setting in the second ring body 4
Footpath, you can the regulation to equivalent capacity is realized, so as to reduce regulation difficulty.
Similar with the mode of the size of above-mentioned regulation equivalent capacity, as shown in Figure 2 C, ring body is three, respectively the
One ring body 3, the second ring body 4 and the 3rd ring body 5, wherein, the center line of the first ring body 3 overlaps with the center line of fringe region 11；
Second ring body 4 is located at the outside of the first ring body 3, and the internal diameter of the second ring body 4 is equal with the external diameter of the first ring body 3；3rd ring body 5
Positioned at the inner side of the first ring body 3, and the external diameter of the 3rd ring body 3 is equal with the internal diameter of the first ring body 3.In such a case, it is possible to
Using the size of following manner regulation equivalent capacity, i.e. in the external diameter and the 3rd ring body 5 by setting the second ring body 4 respectively
Footpath, to make equivalent capacity reach desired value.Furtherly, the radial width of the first ring body 3 is changeless.It is basic herein
On, the external diameter of the second ring body 4 is bigger, and the internal diameter of the 3rd ring body 5 is smaller, then the radial width L1 of the second ring body 4 is bigger, the 3rd ring
The radial width L2 of body 5 is bigger, bigger so as to the radial width sum of the first ring body 3, the second ring body 4 and the 3rd ring body 5；Instead
It, the external diameter of the second ring body 4 is smaller, and the internal diameter of the 3rd ring body 5 is bigger, then the radial width L1 of the second ring body 4 is smaller, the 3rd ring
The radial width L2 of body 5 is smaller, smaller so as to the radial width sum of the first ring body 3, the second ring body 4 and the 3rd ring body 5.Cause
This, only by setting the external diameter of the second ring body 4 and the internal diameter of the 3rd ring body 5 respectively, you can the regulation to equivalent capacity is realized, from
And regulation difficulty can be reduced.
Certainly, in actual applications, other any-modes can also be used to change the radial width of ring body, to realize equity
Imitate the regulation of electric capacity.
Also referring to Fig. 3 A~Fig. 3 D, bottom electrode mechanism that third embodiment of the invention provides, it thinks above-mentioned first, the
On the basis of two embodiments, dead ring also includes upper connection ring 4 and lower connection ring 5, in order to realize the installation of ring body.
Specifically, upper connection ring 4 is arranged between the top surface of ring body and the bottom surface of pedestal 1, and upper connection ring 4 respectively with
Pedestal 1 is fixedly connected with ring body.Wherein, the close outer peripheral opening position of upper connection ring 4 is provided with multiple connecting holes 41, used
In upper connection ring 4 is fixedly connected with pedestal 1 by screw.Set in the appropriate position relative with ring body of upper connection ring 4
There are multiple connecting holes 42, and multiple screwed holes 301 are provided with the surface relative with upper connection ring 4 of ring body, for leading to
Screw is crossed to be fixedly connected with upper connection ring 4 with ring body.
Lower connection ring 5 is arranged between the bottom surface of ring body and the top surface of chamber bottom 2, and lower connection ring 5 respectively with chamber
Room bottom wall 2 is fixedly connected with ring body.Wherein, the close outer peripheral opening position of lower connection ring 5 is provided with multiple connecting holes 51,
For lower connection ring 5 to be fixedly connected with chamber bottom 2 by screw.In the appropriate location relative with ring body of lower connection ring 5
Place is provided with multiple connecting holes 52, and is provided with multiple screwed holes 301 on the surface relative with lower connection ring 5 of ring body,
For lower connection ring 5 to be fixedly connected with ring body by screw.
In order to realize sealing, between upper connection ring 4 and pedestal 1, between upper connection ring 4 and ring body, in lower connection ring 5
Between chamber bottom 2, and sealing ring is provided between lower connection ring 5 and ring body.Specifically, can distinguish in ring body
It is provided for installing the annular concave path 302 of sealing ring on the surface relative with upper connection ring 4 and lower connection ring 5；In upper connection ring 4
It is provided for installing the annular concave path 43 of sealing ring on the surface relative with pedestal 1 and ring body respectively；And in lower connection ring 5
It is provided for installing the annular concave path 53 of sealing ring on the surface relative with chamber bottom 2 and ring body respectively.
As another technical scheme, as shown in figure 4, the embodiment of the present invention also provides a kind of reaction chamber 100, it includes
The bottom electrode mechanism that the above-mentioned each embodiment of the present invention provides.
In the present embodiment, bottom electrode mechanism includes pedestal 101, and is from top to bottom set successively around the pedestal 101
It is equipped with focusing ring 102, basic ring 103, shading ring 104 and dead ring 105.Moreover, the chamber bottom of the subjacent positioned at pedestal 101
Wall, equivalent capacity is formed between the bottom surface of pedestal 101 and the bottom chamber locular wall.
Reaction chamber provided in an embodiment of the present invention, its by using the above-mentioned each embodiment of the present invention provide it is above-mentioned under
Electrode mechanism, etch rate, the uniformity of etching homogeneity distribution can be improved, so as to so that model identical process equipment
Consistent sexual satisfaction requirement.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, but the invention is not limited in this.For those skilled in the art, the essence of the present invention is not being departed from
In the case of refreshing and essence, various changes and modifications can be made therein, and these variations and modifications are also considered as protection scope of the present invention.
Claims (13)
1. a kind of bottom electrode mechanism, including pedestal, dead ring is provided between the pedestal and the chamber bottom, with institute
State and form equivalent capacity between the fringe region of the bottom surface of pedestal and the chamber bottom, it is characterised in that the equivalent capacity
The parallel plate capacitor formed is filled by least two different mediums to be formed in parallel.
2. bottom electrode mechanism according to claim 1, it is characterised in that the dead ring includes corresponding a part of side
The ring body in edge region；
The radial width of the ring body meets the condition for making the equivalent capacity reach desired value.
3. bottom electrode mechanism according to claim 2, it is characterised in that the ring body is one, and the footpath of the ring body
It is less than the radial width of the fringe region to width.
4. bottom electrode mechanism according to claim 3, it is characterised in that the radial width of the ring body meets following public affairs
Formula：
L=(R-r)/4
Wherein, L is the radial width of the ring body；R is the external diameter of the fringe region；R is the internal diameter of the fringe region.
5. bottom electrode mechanism according to claim 3, it is characterised in that the radial width of the ring body meets following public affairs
Formula：
L=(R-r)/2
Wherein, L is the radial width of the ring body；R is the external diameter of the fringe region；R is the internal diameter of the fringe region.
6. bottom electrode mechanism according to claim 3, it is characterised in that the radial width of the ring body meets following public affairs
Formula：
L=3* (R-r)/4
Wherein, L is the radial width of the ring body；R is the external diameter of the fringe region；R is the internal diameter of the fringe region.
7. bottom electrode mechanism according to claim 2, it is characterised in that the ring body is at least two, and concentric each other
Ring, and in each two adjacent ring bodies, positioned at the internal diameter and the external diameter of the ring body positioned at inner side of the ring body in outside
It is equal；
By making the radial width of one of them ring body constant, and the radial width of remaining ring body is adjusted, to make
State equivalent capacity and reach desired value.
8. bottom electrode mechanism according to claim 7, it is characterised in that the ring body is two, respectively the first ring body
With the second ring body on the outside of it, wherein,
The internal diameter of first ring body is equal with the internal diameter of the fringe region；
The internal diameter of second ring body is equal with the external diameter of first ring body；
By setting the external diameter of second ring body, to make the equivalent capacity reach desired value.
9. bottom electrode mechanism according to claim 7, it is characterised in that the ring body is two, respectively the first ring body
With the second ring body on its inside, wherein,
The external diameter of first ring body is equal with the external diameter of the fringe region；
The external diameter of second ring body is equal with the internal diameter of first ring body；
By setting the internal diameter of second ring body, to make the equivalent capacity reach desired value.
10. bottom electrode mechanism according to claim 7, it is characterised in that the ring body is three, respectively the first ring
Body, the second ring body and the 3rd ring body, wherein,
The center line of first ring body overlaps with the center line of the fringe region；
Second ring body is located at the outside of first ring body, and the internal diameter of second ring body and first ring body is outer
Footpath is equal；
3rd ring body is located at the inner side of first ring body, and the external diameter of the 3rd ring body and first ring body is interior
Footpath is equal；
By setting the external diameter of second ring body and the internal diameter of the 3rd ring body respectively, to make the equivalent capacity reach the phase
Prestige value.
11. according to the bottom electrode mechanism described in claim 1-10 any one, it is characterised in that the dead ring also includes upper
Connection ring and lower connection ring, wherein,
The upper connection ring is arranged between the top surface of the ring body and the bottom surface of the pedestal；The upper connection ring respectively with institute
Pedestal is stated to be fixedly connected with the ring body；
The lower connection ring is arranged between the bottom surface of the ring body and the top surface of the chamber bottom；The lower connection ring difference
It is fixedly connected with the chamber bottom and the ring body.
12. bottom electrode mechanism according to claim 11, it is characterised in that on described connection ring and the pedestal it
Between, on described between connection ring and the ring body, between the lower connection ring and the chamber bottom, and under described
Sealing ring is provided between connection ring and the ring body.
13. a kind of reaction chamber, it is characterised in that including the bottom electrode mechanism described in claim 1-12 any one.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710749263.6A CN107610999B (en) | 2017-08-28 | 2017-08-28 | Lower electrode mechanism and reaction chamber |
| PCT/CN2018/101340 WO2019042179A1 (en) | 2017-08-28 | 2018-08-20 | Lower electrode assembly and process chamber |
| TW107129024A TWI725336B (en) | 2017-08-28 | 2018-08-20 | Lower electrode assembly and process chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710749263.6A CN107610999B (en) | 2017-08-28 | 2017-08-28 | Lower electrode mechanism and reaction chamber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107610999A true CN107610999A (en) | 2018-01-19 |
| CN107610999B CN107610999B (en) | 2024-08-23 |
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ID=61056245
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710749263.6A Active CN107610999B (en) | 2017-08-28 | 2017-08-28 | Lower electrode mechanism and reaction chamber |
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| Country | Link |
|---|---|
| CN (1) | CN107610999B (en) |
| TW (1) | TWI725336B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019042179A1 (en) * | 2017-08-28 | 2019-03-07 | 北京北方华创微电子装备有限公司 | Lower electrode assembly and process chamber |
| TWI725336B (en) * | 2017-08-28 | 2021-04-21 | 大陸商北京北方華創微電子裝備有限公司 | Lower electrode assembly and process chamber |
| TWI754325B (en) * | 2019-08-29 | 2022-02-01 | 南韓商吉佳藍科技股份有限公司 | Plasma treatment device including a focus ring with improved plasma treatment vertical angle |
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Also Published As
| Publication number | Publication date |
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| TW201913710A (en) | 2019-04-01 |
| TWI725336B (en) | 2021-04-21 |
| CN107610999B (en) | 2024-08-23 |
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