CN107588736B - A kind of measurement method and device of storage medium thickness - Google Patents
A kind of measurement method and device of storage medium thickness Download PDFInfo
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- CN107588736B CN107588736B CN201710774186.XA CN201710774186A CN107588736B CN 107588736 B CN107588736 B CN 107588736B CN 201710774186 A CN201710774186 A CN 201710774186A CN 107588736 B CN107588736 B CN 107588736B
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Abstract
The embodiment of the present application discloses a kind of measurement method of storage medium thickness, this method comprises: obtaining actual measurement spectrum, the actual measurement spectrum is storage medium to be measured collected spectrum after actual light source is irradiated；According to the actual measurement spectrum, first object sample spectrum is found from the sample spectrum library pre-established, wherein, the sample spectrum library includes the corresponding sample spectrum of different sample storage mediums, the regression fit goodness highest between the first object sample spectrum and the actual measurement spectrum；According to the thickness value of the corresponding sample storage medium of the first object sample spectrum, the thickness value of the storage medium to be measured is determined.It can be seen that, the application can eliminate after getting actual measurement spectrum, it also needs to be modeled for the storage medium to be measured, the calculating of assignment and regression fit, so as to shorten the time of measuring of storage medium thickness, and then has also shortened the factory period of storage medium.
Description
Technical field
This application involves field of storage mediums, more particularly to the measurement method and device of a kind of storage medium thickness.
Background technique
Computer flash memory device (NAND flash memory, abbreviation NAND), such as 3D NAND, plane NAND etc. are deposited
Storage media is required to precipitation number to even up to a hundred layers of dielectric film as storage unit, wherein one layer of dielectric film can wrap
Multilayer material layer is included, for example, material layer is layer of silicon dioxide and one layer of silicon nitride.Be typically due to the thickness of storage medium for
The electrical property of subsequent technique and device is of crucial importance, and therefore, it is necessary to the thickness to storage medium to measure.
Currently, the method for being based primarily upon real-time regression fitting calculates the thickness of storage medium.When measurement storage is situated between
When one layer of dielectric film in matter, the time that this layer of dielectric film usually requires 10 seconds is calculated, and since a piece of storage medium is logical
It often include dielectric multi-layer optical thin film, therefore, it is necessary to the thickness respectively to each layer of dielectric film in storage medium to measure,
For example a piece of 12 inches of storage medium usually requires nearly 3 minutes.Clearly as conventional planar NAND manufacturing process intermediary
Matter film only has several layers, and the thickness of the method computer storage media based on real-time regression fitting is more applicable in.But due to 3D
Needed in NAND manufacturing process include dozens or even hundreds of layer dielectric film storage medium, compared with the medium of conventional planar NAND
The film number of plies is more, and the rate request for calculating the storage medium is higher, deposits according to based on the method that real-time regression is fitted to this
Storage media thickness measures, and will lead to the overlong time for calculating the storage medium thickness, excessive in the measurement board consuming time,
Extend the factory period of storage medium.
Summary of the invention
The main purpose of the application is to provide the measurement method and device of a kind of storage medium thickness, can shorten storage
The time of measuring of dielectric thickness.
In order to solve the above-mentioned technical problem, in a first aspect, this application provides a kind of measurement method of storage medium thickness,
This method comprises:
Actual measurement spectrum is obtained, the actual measurement spectrum is that storage medium to be measured acquires after actual light source is irradiated
The spectrum arrived；
According to the actual measurement spectrum, first object sample spectrum is found from the sample spectrum library pre-established,
In, the sample spectrum library includes the corresponding sample spectrum of different sample storage mediums, the first object sample spectrum and institute
State the regression fit goodness highest between actual measurement spectrum；
According to the thickness value of the corresponding sample storage medium of the first object sample spectrum, the storage to be measured is determined
The thickness value of medium.
Optionally, the sample spectrum library includes the corresponding one group of sample spectrum cluster of at least a kind of storage medium, wherein institute
The material property stated between the sample storage medium that every class storage medium includes is identical, the material property between every class storage medium
It is different；
It is described according to the actual measurement spectrum, found from the sample spectrum stored in the sample spectrum library pre-established
Before first object sample spectrum, further includes:
Determine the real material characteristic of the medium to be measured；
Then, described according to the actual measurement spectrum, from the sample spectrum stored in the sample spectrum library pre-established
Find first object sample spectrum, comprising:
Sample storage medium identical with the real material characteristic is inquired from the actual sample library of spectra；
The first object sample spectrum is found from the corresponding sample spectrum cluster of the sample storage medium.
Optionally, in the sample spectrum library every class storage medium include different-thickness sample storage medium；The sample
Sample spectrum forming process in this library of spectra includes:
The model parameter of storage medium model is obtained, the model parameter includes the dielectric film number of plies, every layer of dielectric film
Material composition and the material thickness；
Sample spectrum is obtained, the sample spectrum is the storage medium model collected light after analog light source irradiates
Spectrum.
Optionally, the thickness value of the corresponding sample storage medium of each sample spectrum is also stored in sample spectrum library；
The thickness value according to the corresponding sample storage medium of the first object sample spectrum, determines described to be measured
The thickness value of storage medium, comprising:
The thickness value of the corresponding sample storage medium of the first object sample spectrum is obtained from the sample spectrum library；
According to the thickness value of the corresponding sample storage medium of the first object sample spectrum, the storage to be measured is determined
The thickness value of medium.
Optionally, the thickness value according to the corresponding sample storage medium of the first object sample spectrum, determines institute
State the thickness value of storage medium to be measured, comprising:
By the thickness value of the corresponding sample storage medium of the first object sample spectrum, it is situated between as the storage to be measured
The thickness value of matter；
Or,
According to the actual measurement spectrum, the second target sample spectrum, institute are found from the sample spectrum library pre-established
It states the regression fit goodness between the second target sample spectrum and the actual measurement spectrum and is only second to the first object sample
Regression fit goodness between spectrum and the actual measurement spectrum；
According to the thickness value and second target sample of the corresponding sample storage medium of the first object sample spectrum
The thickness value of the corresponding sample storage medium of spectrum determines the thickness value of the storage medium to be measured.
The embodiment of the present application also provides a kind of measuring device of storage medium thickness, which includes:
Measure spectrum acquiring unit, for obtaining actual measurement spectrum, the actual measurement spectrum is storage to be measured Jie
Matter collected spectrum after actual light source is irradiated；
Sample spectrum searching unit, for being looked for from the sample spectrum library pre-established according to the actual measurement spectrum
To first object sample spectrum, wherein the sample spectrum library includes the corresponding sample spectrum of different sample storage mediums, described
Regression fit goodness highest between first object sample spectrum and the actual measurement spectrum；
Thickness value determination unit, for the thickness according to the corresponding sample storage medium of the first object sample spectrum
Value, determines the thickness value of the storage medium to be measured.
Optionally, the sample spectrum library includes the corresponding one group of sample spectrum cluster of at least a kind of storage medium, wherein institute
The material property stated between the sample storage medium that every class storage medium includes is identical, the material property between every class storage medium
It is different；
Described device further include:
Material property determination unit, for determining the real material characteristic of the medium to be measured；
Then, the sample spectrum searching unit includes:
Sample storage medium inquires subelement, special for the inquiry from the actual sample library of spectra and the real material
The identical sample storage medium of property；
Sample spectrum searches subelement, for finding described the from the corresponding sample spectrum cluster of the sample storage medium
One target sample spectrum.
Optionally, in the sample spectrum library every class storage medium include different-thickness sample storage medium；The dress
It sets further include:
Model parameter acquiring unit, for obtaining the model parameter of storage medium model, the model parameter includes medium
The film number of plies, every layer of dielectric film material composition and the material thickness；
Sample spectrum acquiring unit, for obtaining sample spectrum, the sample spectrum is the storage medium model through mould
Collected spectrum after quasi- light source irradiation.
Optionally, the thickness value of the corresponding sample storage medium of each sample spectrum is also stored in sample spectrum library；
The thickness value determination unit includes:
Thickness value obtains subelement, corresponding for obtaining the first object sample spectrum from the sample spectrum library
The thickness value of sample storage medium；
First thickness value determines subelement, for according to the corresponding sample storage medium of the first object sample spectrum
Thickness value determines the thickness value of the storage medium to be measured.
Optionally, the thickness value determination unit includes:
Second thickness value determines subelement, for by the thickness of the corresponding sample storage medium of the first object sample spectrum
Angle value, the thickness value as the storage medium to be measured；
Or,
Sample spectrum searches subelement, is used for according to the actual measurement spectrum, from the sample spectrum library pre-established
Find the second target sample spectrum, the regression fit goodness between the second target sample spectrum and the actual measurement spectrum
The regression fit goodness being only second between the first object sample spectrum and the actual measurement spectrum；
Third thickness value determines subelement, for according to the corresponding sample storage medium of the first object sample spectrum
The thickness value of thickness value and the corresponding sample storage medium of the second target sample spectrum, determines the storage medium to be measured
Thickness value.
The application is got during carrying out thickness measure to storage medium it can be seen from above-mentioned technical proposal
Storage medium to be measured is after actual light source is irradiated after collected actual measurement spectrum, it is only necessary to from pre-set sample light
Spectrum library in find with the highest target sample spectrum of regression fit goodness between the actual measurement spectrum, can be according to the target
The corresponding thickness value of sample spectrum determines the thickness value of the storage medium to be measured, eliminates and is getting actual measurement spectrum
Afterwards, it is also necessary to be modeled for the storage medium to be measured, the calculating of assignment and regression fit, so as to shorten storage medium
The time of measuring of thickness, and then also shortened the factory period of storage medium.
Detailed description of the invention
In order to illustrate the technical solutions in the embodiments of the present application or in the prior art more clearly, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of application without any creative labor, may be used also for those of ordinary skill in the art
To obtain other drawings based on these drawings.
Fig. 1 is a kind of method flow diagram of the measurement method of storage medium thickness provided by the embodiments of the present application；
Fig. 2 is a kind of measurement method flow diagram of storage medium thickness provided by the embodiments of the present application；
Fig. 3 is a kind of exemplary diagram of acquisition spectrum being collected into provided by the embodiments of the present application；
Fig. 4 is a kind of regression fit goodness schematic diagram provided by the embodiments of the present application；
Fig. 5 is a kind of forming process schematic diagram in sample spectrum library provided by the embodiments of the present application；
Fig. 6 is a kind of composition schematic diagram of the measuring device of storage medium thickness provided by the embodiments of the present application.
Specific embodiment
With reference to the accompanying drawing, embodiments herein is described.
The thickness measure mode of traditional storage medium is measured based on the method for real-time regression fitting.At this
In traditional approach, when the thickness using the method being fitted based on real-time regression to each layer of dielectric film in storage medium to be measured
When degree measures, after the spectrum for collecting storage medium to be measured, storage medium model is established, it is to be measured needing to measure this
When measuring each layer of dielectric film in storage medium, it is required to set each layer of dielectric film in the storage medium model respectively
Different thickness values is set, and obtains the storage medium model collected spectrum after analog light source irradiates, is i.e. assignment each time
After require to carry out a regression fit, to get spectrum corresponding to current assignment, if the spectrum and collected light
Fitting degree is lower between spectrum, then needs assignment again and carry out regression fit, if between the spectrum and collected spectrum
Regression fit goodness is higher, it may be considered that being currently for the thickness assignment of each layer of dielectric film in storage medium model
For the corresponding thickness of each layer of dielectric film in storage medium to be measured, to obtain the thickness of storage medium to be measured.
Applicant it has been investigated that, state traditional approach in use to during the thickness measure of storage medium, it is each
After the secondary each layer of dielectric film in storage medium model carries out assignment, require to re-start regression fit, in this way, can lead
The time for calculating every layer of dielectric film thickness is caused to increase.It, can significantly when needing to measure the dielectric film of dozens or even hundreds of layer
Increase the time of computer storage media.
For this purpose, the embodiment of the present application proposes the measurement method and device of a kind of storage medium thickness, to want to contract
The time of measuring of short storage medium thickness, and then shorten the factory period of storage medium.
It is first right before introducing the embodiment of the present application for the technical solution of more clear and complete description the application
The basic conception of storage medium is introduced.
Storage medium is the carrier of storing data, can be stacked by dielectric multi-layer optical thin film, wherein one layer of dielectric film
It may include multilayer material layer, and the thickness of each material layer in the multilayer material layer can be different, such as one layer of Jie
Matter film may include two layers of material, and respectively a layer thickness is the silica of 1nm, and a layer thickness is the silicon nitride of 2nm,
Certainly, the thickness of each material layer in the multilayer material layer is also possible to identical, for example one layer of dielectric film may include
Two layers of material, respectively a layer thickness are the silica of 1nm, and a layer thickness is the silicon nitride of 1nm.
It should be noted that in a piece of storage medium, material layer composed structure in each layer of dielectric film and
The thickness of each material layer is all identical, for example, including 100 layers of dielectric film in a piece of storage medium, each layer of medium is thin
Film all includes two layers of material, wherein the first layer of material is silica, and its thickness is also 1nm, and second layer material
The bed of material is silicon nitride, and its thickness is also 2nm.
For the time of measuring for shortening storage medium thickness, sample spectrum library is introduced in the embodiment of the present application, the sample light
Spectrum library is pre-established before measuring storage medium to be measured, and a sample light is at least stored in the sample spectrum library
Spectrum.
Since each sample spectrum in the sample spectrum library is according to different sample storage mediums through same reality
It is collected after the irradiation of border light source, wherein the dielectric film number of plies of these sample storage mediums, the material of dielectric film form
And/or material thickness is different.Therefore, each sample spectrum in the sample spectrum library is entirely different, and
And each sample spectrum can correspond to the thickness value of a piece of sample storage medium.It should be noted that the sample spectrum library
In the forming process of sample spectrum will be specifically introduced later.
Next, the measurement method flow diagram that Fig. 1 and storage medium thickness shown in Fig. 2 will be combined, to illustrate
How the embodiment of the present application measures the thickness of storage medium.
Fig. 1 is a kind of method flow diagram of the measurement method of storage medium thickness provided by the embodiments of the present application, such as Fig. 1 institute
Show, method includes the following steps:
S101: actual measurement spectrum is obtained.
In the embodiment of the present application, can first obtain actual measurement spectrum, for example, can using elliptically polarized light spectral technology into
Row obtains, wherein the actual measurement spectrum is storage medium to be measured collected spectrum, i.e. Fig. 2 after actual light source is irradiated
Shown step 201 and step 202.
Specifically, during due to obtaining spectrum using elliptically polarized light spectral technology, not needing should by slice monitoring
The thickness of storage medium can be realized in the case where not destroying this body structure of storage medium, carry out to storage medium not damaged
Monitoring.Therefore, specific light source (such as beam of white light) first can be used as incident light, and gets to storage at an angle
On medium, after which is reflected or transmitted by storage medium, the polarization state of the incident light changes, then, Ke Yigen
The case where changing according to the polarization state generates actual measurement spectrum.
For example, can use spectroscopic ellipsometry machine for 3D NAND storage medium and acquire its practical measure spectrum.It can
Light source is arranged as beam of white light, incident angle is 65 degree, and passes through the operation such as be divided and take pictures, and collects piece 3D NAND
Spectrum of the storage medium after light source irradiation.
It should be noted that spectrum involved in the embodiment of the present application is two-dimensional spectroscopic ellipsometry, horizontal seat
It is designated as optical wavelength, ordinate is spectral signal intensity, and the exemplary diagram for the acquisition spectrum being specifically collected into is shown in Figure 3.
S102: according to the actual measurement spectrum, first object sample light is found from the sample spectrum library pre-established
Spectrum, wherein the sample spectrum library includes the corresponding sample spectrum of different sample storage mediums, the first object sample spectrum
Regression fit goodness highest between the actual measurement spectrum.
By execute S101 after, it is available arrive actual measurement spectrum, then by the actual measurement spectrum with pre-establish
Sample spectrum library in each sample spectrum for storing compared one by one, such as can by the actual measurement spectrum with it is each
Sample spectrum is fitted one by one, and determines each sample stored in the actual measurement spectrum and the sample spectrum library
Regression fit goodness between spectrum.
It should be noted that the regression fit goodness between two spectrum can be used to indicate that it is similar between two spectrum
Degree, and the numerical value of the regression fit goodness is 0 to 1, wherein the numerical value of the regression fit goodness is bigger, indicates this two light
Similarity degree between spectrum is higher, conversely, the numerical value of the regression fit goodness is smaller, indicates the similar journey between this two spectrum
It spends lower.For example, illustrating this two spectrum similarity degree poles when the numerical value of the regression fit goodness between two spectrum is 0
Low, i.e., this two spectrum are entirely different；When the numerical value of the regression fit goodness between two spectrum is 1, illustrate this two light
Spectrum similarity degree is high, i.e., this two spectrum are almost the same.
Therefore, in the embodiment of the present application, each galley proof stored in actual measurement spectrum and sample spectrum library is determined
After regression fit goodness between this spectrum, in sample spectrum that can be all from the sample spectrum, determine and the reality
The highest sample spectrum of regression fit goodness between measure spectrum, and using the sample spectrum as first object sample spectrum,
Step 203 i.e. shown in Fig. 2.That is, other sample spectrums in the first object sample spectrum and the sample spectrum library
In comparison, the similarity degree of the first object sample spectrum and the actual measurement spectrum is highest.
Next, specific introduce each sample spectrum for how determining and storing in actual measurement spectrum and sample spectrum library
Between regression fit goodness.
Specifically, the spectral signal that can first successively answer actual measurement spectrum with each pair of point in each sample spectrum
It is poor that intensity value is made, wherein optical wavelength corresponding to each point is identical.Then, by the actual measurement spectrum and each
The work difference result of sample spectrum is summed, or is averaged.Then, according to corresponding to all sample spectrums and flat
The size of mean value is that each sample spectrum distributes corresponding regression fit goodness respectively, wherein the numerical value of regression fit goodness
Range is 0 to 1.
For ease of understanding, it is illustrated now in conjunction with Fig. 4 and how to determine and deposited in actual measurement spectrum and sample spectrum library
Regression fit goodness between each sample spectrum of storage.
Assuming that being stored with 99 sample spectrums in sample spectrum library.By actual measurement spectrum A successively with this 99 sample lights
It is poor that the spectral signal intensity value that each pair of point is answered in each sample spectrum in spectrum is made, and by the actual measurement spectrum A and often
The work difference result of one sample spectrum is averaged.Then, by average value corresponding to this 99 sample spectrums from greatly to
Small sequence, and be that each sample spectrum distributes corresponding regression fit goodness respectively according to ranking results.For example, sample spectrum
The corresponding average value of B comes the 28th in this 99 articles of sample spectrums, so the corresponding regression fit goodness of sample spectrum B can
Think 0.72；The corresponding average value of sample spectrum C comes the 15th in this 99 articles of sample spectrums, so B pairs of the sample spectrum
The regression fit goodness answered can be 0.85；The corresponding average value of sample spectrum D comes the 1st in this 99 articles of sample spectrums,
So the corresponding regression fit goodness of sample spectrum B can be 0.99.Obviously, the corresponding regression fit of sample spectrum B is excellent
Degree is highest in this corresponding regression fit goodness of 99 sample spectrums, it is believed that sample spectrum B and the practical survey
Amount spectrum A similarity degree be it is highest, therefore, can be using sample spectrum B as first object sample spectrum.
S103: it according to the thickness value of the corresponding sample storage medium of the first object sample spectrum, determines described to be measured
Measure the thickness value of storage medium.
After executing S102, first object sample spectrum can be determined, then, the available first object sample
The corresponding thickness value of spectrum.In a kind of embodiment of the application, each sample light can also be stored in sample spectrum library
Corresponding thickness value is composed, i.e., stores the corresponding relationship of sample spectrum and thickness value, and each sample light in the sample spectrum library
Spectrum corresponds to a thickness value.Therefore, the corresponding sample of first object sample spectrum can be obtained from the sample spectrum library
The thickness value of storage medium, for example, can be corresponding with a thickness value using first object sample spectrum in sample spectrum library
Relational query goes out thickness value corresponding to the first object sample spectrum.
After determining the corresponding thickness value of first object sample spectrum, due to the first object sample spectrum and practical survey
Measure the regression fit goodness highest between spectrum, the i.e. similarity degree of the first object sample spectrum and the actual measurement spectrum most
It is high.It is therefore contemplated that the corresponding thickness value of first object sample spectrum thickness value corresponding with the actual measurement spectrum is (i.e.
The thickness value of storage medium to be measured) very close to, in some instances it may even be possible to it is equivalent.
So can be by the thickness value of the corresponding sample storage medium of first object sample spectrum, as storage to be measured
The thickness value of medium, i.e., step 204 shown in Fig. 2.For example, if returning between first object sample spectrum and actual measurement spectrum
When returning the numerical value of the goodness of fit almost close to 1, it is believed that the thickness of the corresponding sample storage medium of first object sample spectrum
Angle value is almost equal with the thickness value of storage medium to be measured, at this point it is possible to by the corresponding sample of first object sample spectrum
Thickness value of the thickness value of storage medium as the storage medium to be measured.
The thickness value for determining storage medium to be measured in order to be more accurate, in a kind of embodiment of the application,
" according to the corresponding thickness value of the first object sample spectrum, the thickness of the storage medium to be measured is determined in above-mentioned S103
The step of angle value " may include: to find the second target sample from the sample spectrum library pre-established according to actual measurement spectrum
Spectrum, according to the thickness value and the second target sample spectrum of the corresponding sample storage medium of the first object sample spectrum
The thickness value of corresponding sample storage medium determines the thickness value of the storage medium to be measured.
Wherein, the regression fit goodness between the second target sample spectrum and actual measurement spectrum can be only second to this first
Regression fit goodness between target sample spectrum and the actual measurement spectrum.In this way, using between the actual measurement spectrum
Higher two sample spectrums of regression fit goodness, the thickness value for the storage medium to be measured determined is more accurate.
It in the present embodiment, can first will be real after determining first object sample spectrum and the second target sample spectrum
The spectral signal that border measure spectrum is successively answered with each pair of point in the first object sample spectrum, the second target sample spectrum is strong
It is poor that angle value is made, wherein optical wavelength corresponding to each point is identical.Then, by the actual measurement spectrum and first mesh
Mark sample spectrum, the work difference result of the second target sample spectrum sums, or averages.Then, according to above-mentioned meter
Calculation method, calculate the work difference result of the first object sample spectrum and the second target sample spectrum and/or average value.
And then, it is corresponding that the first object sample spectrum, the second target sample spectrum are obtained from sample spectrum library
The thickness value of sample storage medium, and according to the actual measurement spectrum and the first object sample spectrum, second target sample
The work difference result of spectrum and/or average value and the first object sample spectrum and the second target sample spectrum work difference knot
Fruit and/or between average value numerical relation, such as numerical values recited ratio.To using the first object sample spectrum, this
The thickness value of the two corresponding sample storage mediums of target sample spectrum determines that storage to be measured is situated between according to the numerical relation
The thickness value of matter.
For ease of understanding, the thickness according to the corresponding sample storage medium of first object sample spectrum is now illustrated how to
It is worth the thickness value of sample storage medium corresponding with the second target sample spectrum, determines the thickness value of storage medium to be measured.
It is assumed that in first object sample spectrum the spectral signal intensity of each point be all larger than it is each in actual measurement spectrum
The top that point, i.e. the first object sample spectrum are located at the actual measurement spectrum；And each point in the second target sample spectrum
Spectral signal intensity is respectively less than each point in the actual measurement spectrum, i.e., the second target sample spectrum is located at the actual measurement
Spectrum it is following；Also, the work difference knot of the actual measurement spectrum and the first object sample spectrum, the second target sample spectrum
Fruit average value A, B are respectively 0.001,0.001, the work difference result of the first object sample spectrum and the second target sample spectrum
Average value C is 0.002；Make poor result average value A, B, C according to these three, can determine between these three average values A, B, C
Numerical relation, as average value A, B is the 50% of average value C, hence, it can be determined that go out the actual measurement spectrum be to be located at
The middle position of the first object sample spectrum and the second target sample spectrum.Then, obtained from sample spectrum library this
One target sample spectrum, the corresponding sample storage medium of the second target sample spectrum thickness value be respectively 99nm, 101nm,
So as to determine that the thickness value of storage medium to be measured should be between the first object sample according to the numerical relation
Spectrum, the corresponding sample storage medium of the second target sample spectrum thickness value among, it can determine that this to be measured is deposited
The thickness value of storage media is 100nm.
As it can be seen that can be got to be measured during carrying out thickness measure to storage medium in the embodiment of the present application
Storage medium is after actual light source is irradiated after collected actual measurement spectrum, it is only necessary to from pre-set sample spectrum library
Find with the highest first object sample spectrum of regression fit goodness between the actual measurement spectrum, can be according to first mesh
The corresponding thickness value of mark sample spectrum determines the thickness value of the storage medium to be measured, eliminates and is getting actual measurement light
After spectrum, it is also necessary to be modeled for the storage medium to be measured, the calculating of assignment and regression fit, be situated between so as to shorten storage
The time of measuring of matter thickness, and then also shortened the factory period of storage medium.
To shorten the time for finding first object sample spectrum from sample spectrum library, it is situated between further to shorten storage
The time of measuring of matter thickness may include that at least a kind of storage is situated between in a kind of embodiment of the application, in sample spectrum library
The corresponding one group of sample spectrum cluster of matter, wherein the material property between sample storage medium that every class storage medium includes is identical,
Material property between every class storage medium is different.In the case, before above-mentioned S102, can with the following steps are included:
Determine the real material characteristic of the medium to be measured.At this point, above-mentioned S102 can be to inquire from the actual sample library of spectra
Sample storage medium identical with the real material characteristic is then found from the corresponding sample spectrum cluster of the sample storage medium
First object sample spectrum.
In the embodiment of the present application, the identical sample storage medium of material property can be classified as one kind, for example, can will be every
Material layer is that the storage medium of silica and silicon nitride is classified as one kind in layer dielectric film, wherein every class storage medium it
Between material property be different.It is according to difference accordingly, due to each sample spectrum in the sample spectrum library
Sample storage medium through same actual light source irradiation after it is collected, therefore, can be by same class storage medium through same reality
The collected sample spectrum of institute is classified as one kind after the irradiation of border light source, for ease of description, such sample spectrum is known as one group of sample
This spectrum cluster.In this way, may include the corresponding one group of sample spectrum cluster of at least a kind of storage medium in the sample spectrum library.
Due to including at least one group of sample spectrum cluster in sample spectrum library, it in one implementation, can first really
The real material characteristic of fixed medium to be measured, for example medium to be measured can be determined according to the actual measurement spectrum got
Real material characteristic.Then, according to the real material feature of the medium to be measured, inquired from the actual sample library of spectra with
The identical sample storage medium of real material characteristic, and found out corresponding to the sample storage medium using the sample storage medium
Sample spectrum cluster, then find first object sample spectrum from the sample spectrum in the sample spectrum cluster.It requires emphasis
It is that in the present embodiment, the method for searching first object sample spectrum is similar to above-mentioned S102, may refer to the portion in above-mentioned S102
It defends oneself bright.
As it can be seen that in the embodiment of the present application, due to may include at least a kind of storage medium corresponding one in sample spectrum library
Group sample spectrum cluster, hence, it can be determined that the real material characteristic of medium to be measured, is then looked into from the actual sample library of spectra
Sample storage medium identical with the real material characteristic is ask, is then looked for from the corresponding sample spectrum cluster of the sample storage medium
To first object sample spectrum.As it can be seen that not needing in the present embodiment by all samples in actual measurement spectrum and sample spectrum library
This spectrum is compared one by one, it is only necessary to by the actual measurement spectrum, sample storage medium identical with real material characteristic
All sample spectrums in corresponding sample spectrum cluster are compared, in this way, reducing actual measurement spectrum and sample
The comparison number of sample spectrum in library of spectra, so as to shorten found from sample spectrum library first object sample spectrum when
Between, and then shorten the time of measuring of storage medium thickness.
Next, will in conjunction with Fig. 5 come specifically introduce in the embodiment of the present application, the sample spectrum in sample spectrum library be as
What what was formed.
In a kind of embodiment of the application, every class storage medium may include the sample of different-thickness in sample spectrum library
This storage medium, in the case, the sample spectrum forming process in the sample spectrum library may comprise steps of: first obtain
The model parameter of storage medium model, then obtains sample spectrum, wherein the sample spectrum is the storage medium model through mould
Collected spectrum after quasi- light source irradiation.
Firstly, obtaining the model parameter of storage medium model, which may include the dielectric film number of plies, every layer of Jie
The thickness of the material composition and each material of matter film.
Wherein, the dielectric film number of plies in the storage medium model can be a pre-set numerical value or a number
The dielectric film number of plies being worth in range, such as the storage medium model can be with the dielectric film number of plies in storage medium to be measured
Identical, when the dielectric film number of plies in the measurement storage medium is 100 layers, in the storage medium model the dielectric film number of plies
It also is all 100 layers, for another example the numberical range of the dielectric film number of plies in the storage medium model can be [100,103], i.e.,
The storage medium model that the dielectric film number of plies is 100 layers, the storage medium mould that the dielectric film number of plies is 101 layers can be established respectively
Type, the storage media model that the dielectric film number of plies is 102 layers and storage medium model that the dielectric film number of plies is 103 layers.
The material composition of every layer of dielectric film in the storage medium model can be pre-set material category, and
Different permutation and combination can be carried out according to the material category, to obtain a variety of different material composition situations.For example, it is assumed that
Pre-set material category is silica and silicon nitride, then can store the material of every layer of dielectric film in dielectric model
Composition can be only silica, may also be only silicon nitride, can also be silica and silicon nitride.
Each material thickness of every layer of dielectric film is also possible to preset in the storage medium model, such as each material
Expect that thickness can be a pre-set numberical range, multiple thickness values can be arbitrarily determined in the numberical range to carry out
Modeling can also be modeled with a fixed numbers unit to determine multiple thickness values, for example, when the numerical value of a material thickness
It, can be respectively with a thickness of the corresponding storage medium mould of 0.1nm, 0.2nm, 0.4nm when range is [0.1,0.5] (unit nm)
Type models, can also be respectively to come with a thickness of 0.1nm, 0.2nm, 0.3nm, 0.4nm, 0.5nm corresponding storage medium model
Modeling.
Then, the thickness of each material can be carried out to different combinations, to obtain multiple and different material thickness groups
Close, for example, it is assumed that pre-set material category be silica and silicon nitride, wherein the thickness of silica can be
The thickness of 0.1nm, 0.2nm, silicon nitride can be 0.1nm, 0.2nm, and the thickness value of both materials is carried out to different combinations,
So as to obtain the combination of four kinds of material thickness: silica with a thickness of 0.1nm and silicon nitride with a thickness of 0.1nm, dioxy
SiClx with a thickness of 0.1nm and silicon nitride with a thickness of 0.2nm, silica with a thickness of 0.2nm and silicon nitride with a thickness of
0.1nm, silica with a thickness of 0.2nm and silicon nitride with a thickness of 0.2nm.
It should be noted that the value quantity of each material thickness is more, value is closer, then the sample in sample spectrum library
This spectrum quantity is more, and the regression fit goodness between the sample spectrum in sample spectrum library and actual measurement spectrum is higher,
Sample spectrum i.e. in sample spectrum library is finer, and can be higher with the similarity degree of actual measurement spectrum.
Secondly, after the model parameter for getting storage medium model, according to the model parameter to the storage medium model
Carry out parameter setting, i.e., step 501 shown in fig. 5.Then, by the storage medium model set after analog light source irradiates
Collect the corresponding sample spectrum of storage medium model, i.e., step 502 shown in fig. 5, wherein the light source strip of the analog light source
Part and the light conditions of actual light source can be duplicate.It specifically, can foundation during collecting sample spectrum
The optics analytic equation of Fresnel theory: St(λ)=F (ti,ni,ki) obtain the storage medium model in the light of different wave length λ
Under irradiation, corresponding spectral signal intensity St, to get the sample of the storage medium model after analog light source irradiates
Spectrum, wherein tiFor every layer of dielectric film thickness in the storage medium, niFor the light refractive index of the dielectric film, kiFor this
The absorptivity of dielectric film, i represent the film number of plies of storage medium.Certainly, each storage medium model correspondence is being got
Sample spectrum after, these sample spectrums can be put together, form sample spectrum library, i.e., step 503 shown in fig. 5.
It is a kind of composition schematic diagram of the measuring device of storage medium thickness provided by the embodiments of the present application referring to Fig. 6, it should
Device includes:
Measure spectrum acquiring unit 601, for obtaining actual measurement spectrum, the actual measurement spectrum is storage to be measured
Medium collected spectrum after actual light source is irradiated；
Sample spectrum searching unit 602 is used for according to the actual measurement spectrum, from the sample spectrum library pre-established
Find first object sample spectrum, wherein the sample spectrum library includes the corresponding sample spectrum of different sample storage mediums, institute
State the regression fit goodness highest between first object sample spectrum and the actual measurement spectrum；
Thickness value determination unit 603, for the thickness according to the corresponding sample storage medium of the first object sample spectrum
Angle value determines the thickness value of the storage medium to be measured.
Optionally, the sample spectrum library includes the corresponding one group of sample spectrum cluster of at least a kind of storage medium, wherein institute
The material property stated between the sample storage medium that every class storage medium includes is identical, the material property between every class storage medium
It is different；
Described device further include:
Material property determination unit, for determining the real material characteristic of the medium to be measured；
Then, the sample spectrum searching unit 602 includes:
Sample storage medium inquires subelement, special for the inquiry from the actual sample library of spectra and the real material
The identical sample storage medium of property；
Sample spectrum searches subelement, for finding described the from the corresponding sample spectrum cluster of the sample storage medium
One target sample spectrum.
Optionally, in the sample spectrum library every class storage medium include different-thickness sample storage medium；The dress
It sets further include:
Model parameter acquiring unit, for obtaining the model parameter of storage medium model, the model parameter includes medium
The film number of plies, every layer of dielectric film material composition and the material thickness；
Sample spectrum acquiring unit, for obtaining sample spectrum, the sample spectrum is the storage medium model through mould
Collected spectrum after quasi- light source irradiation.
Optionally, the thickness value of the corresponding sample storage medium of each sample spectrum is also stored in sample spectrum library；
The thickness value determination unit 603 includes:
Thickness value obtains subelement, corresponding for obtaining the first object sample spectrum from the sample spectrum library
The thickness value of sample storage medium；
First thickness value determines subelement, for according to the corresponding sample storage medium of the first object sample spectrum
Thickness value determines the thickness value of the storage medium to be measured.
Optionally, the thickness value determination unit 603 includes:
Second thickness value determines subelement, for by the thickness of the corresponding sample storage medium of the first object sample spectrum
Angle value, the thickness value as the storage medium to be measured；
Or,
Sample spectrum searches subelement, is used for according to the actual measurement spectrum, from the sample spectrum library pre-established
Find the second target sample spectrum, the regression fit goodness between the second target sample spectrum and the actual measurement spectrum
The regression fit goodness being only second between the first object sample spectrum and the actual measurement spectrum；
Third thickness value determines subelement, for according to the corresponding sample storage medium of the first object sample spectrum
The thickness value of thickness value and the corresponding sample storage medium of the second target sample spectrum, determines the storage medium to be measured
Thickness value.
Those of ordinary skill in the art will appreciate that: realize that all or part of the steps of above method embodiment can pass through
The relevant hardware of program instruction is completed, and foregoing routine can be stored in a computer readable storage medium, which exists
When execution, step including the steps of the foregoing method embodiments is executed；And storage medium above-mentioned can be at least one in following media
Kind: read-only memory (English: read-only memory, abbreviation: ROM), RAM, magnetic or disk etc. are various to be can store
The medium of program code.
It should be noted that all the embodiments in this specification are described in a progressive manner, each embodiment it
Between same and similar part may refer to each other, each embodiment focuses on the differences from other embodiments.
For equipment and system embodiment, since it is substantially similar to the method embodiment, so describe fairly simple,
The relevent part can refer to the partial explaination of embodiments of method.Equipment and system embodiment described above is only schematic
, wherein unit may or may not be physically separated as illustrated by the separation member, it is shown as a unit
Component may or may not be physical unit, it can and it is in one place, or may be distributed over multiple networks
On unit.Some or all of the modules therein can be selected to achieve the purpose of the solution of this embodiment according to the actual needs.
Those of ordinary skill in the art can understand and implement without creative efforts.
The above, only a kind of specific embodiment of the application, but the protection scope of the application is not limited thereto,
Within the technical scope of the present application, any changes or substitutions that can be easily thought of by anyone skilled in the art,
Should all it cover within the scope of protection of this application.Therefore, the protection scope of the application should be with scope of protection of the claims
Subject to.
Claims (6)
1. a kind of measurement method of storage medium thickness, which is characterized in that the described method includes:
Actual measurement spectrum is obtained, the actual measurement spectrum is that storage medium to be measured is collected after actual light source is irradiated
Spectrum；
According to the actual measurement spectrum, first object sample spectrum is found from the sample spectrum library pre-established, wherein institute
Stating sample spectrum library includes the corresponding sample spectrum of different sample storage mediums, the first object sample spectrum and the reality
Regression fit goodness highest between measure spectrum；
According to the thickness value of the corresponding sample storage medium of the first object sample spectrum, the storage medium to be measured is determined
Thickness value；
The thickness value according to the corresponding sample storage medium of the first object sample spectrum, determines the storage to be measured
The thickness value of medium, comprising:
According to the actual measurement spectrum, the second target sample spectrum is found from the sample spectrum library pre-established, described
Regression fit goodness between two target sample spectrum and the actual measurement spectrum is only second to the first object sample spectrum
With the regression fit goodness between the actual measurement spectrum；
According to the thickness value and the second target sample spectrum of the corresponding sample storage medium of the first object sample spectrum
The thickness value of corresponding sample storage medium determines the thickness value of the storage medium to be measured；
The sample spectrum library includes the corresponding one group of sample spectrum cluster of at least a kind of storage medium, wherein every class storage medium
Including sample storage medium between material property it is identical, material property between every class storage medium is different；
It is described according to the actual measurement spectrum, find first from the sample spectrum stored in the sample spectrum library pre-established
Before target sample spectrum, further includes:
Determine the material property of the storage medium to be measured；
Then, described according to the actual measurement spectrum, it is found from the sample spectrum stored in the sample spectrum library pre-established
First object sample spectrum, comprising:
Sample storage medium identical with the material property of the storage medium to be measured is inquired from the sample spectrum library；
The first object sample spectrum is found from the corresponding sample spectrum cluster of the sample storage medium.
2. the method according to claim 1, wherein every class storage medium includes difference in the sample spectrum library
The sample storage medium of thickness；Sample spectrum forming process in the sample spectrum library includes:
The model parameter of storage medium model is obtained, the model parameter includes the material of the dielectric film number of plies, every layer of dielectric film
The thickness of material composition and the material；
Sample spectrum is obtained, the sample spectrum is the storage medium model collected spectrum after analog light source irradiates.
3. the method according to claim 1, wherein it is corresponding also to store each sample spectrum in sample spectrum library
The thickness value of sample storage medium；
The thickness value according to the corresponding sample storage medium of the first object sample spectrum, determines the storage to be measured
The thickness value of medium, comprising:
The thickness value of the corresponding sample storage medium of the first object sample spectrum is obtained from the sample spectrum library；
According to the thickness value of the corresponding sample storage medium of the first object sample spectrum, the storage medium to be measured is determined
Thickness value.
4. a kind of measuring device of storage medium thickness, which is characterized in that described device includes:
Measure spectrum acquiring unit, for obtaining actual measurement spectrum, the actual measurement spectrum is storage medium to be measured warp
Collected spectrum after actual light source irradiation；
Sample spectrum searching unit, for according to the actual measurement spectrum, finding the from the sample spectrum library pre-established
One target sample spectrum, wherein the sample spectrum library includes the corresponding sample spectrum of different sample storage mediums, and described first
Regression fit goodness highest between target sample spectrum and the actual measurement spectrum；
Thickness value determination unit, for the thickness value according to the corresponding sample storage medium of the first object sample spectrum, really
The thickness value of the fixed storage medium to be measured；
The thickness value determination unit includes:
Sample spectrum searches subelement, for being found from the sample spectrum library pre-established according to the actual measurement spectrum
Second target sample spectrum, the regression fit goodness between the second target sample spectrum and the actual measurement spectrum are only secondary
Regression fit goodness between the first object sample spectrum and the actual measurement spectrum；
Third thickness value determines subelement, for the thickness according to the corresponding sample storage medium of the first object sample spectrum
It is worth the thickness value of sample storage medium corresponding with the second target sample spectrum, determines the thickness of the storage medium to be measured
Angle value；
The sample spectrum library includes the corresponding one group of sample spectrum cluster of at least a kind of storage medium, wherein every class storage medium
Including sample storage medium between material property it is identical, material property between every class storage medium is different；
Described device further include:
Material property determination unit, for determining the material property of the storage medium to be measured；
Then, the sample spectrum searching unit includes:
Sample storage medium inquires subelement, for inquiring the material with the storage medium to be measured from the sample spectrum library
Expect the identical sample storage medium of characteristic；
Sample spectrum searches subelement, for finding first mesh from the corresponding sample spectrum cluster of the sample storage medium
Mark sample spectrum.
5. device according to claim 4, which is characterized in that every class storage medium includes difference in the sample spectrum library
The sample storage medium of thickness；Described device further include:
Model parameter acquiring unit, for obtaining the model parameter of storage medium model, the model parameter includes dielectric film
The number of plies, every layer of dielectric film material composition and the material thickness；
Sample spectrum acquiring unit, for obtaining sample spectrum, the sample spectrum is the storage medium model through simulated light
Collected spectrum after the irradiation of source.
6. device according to claim 4, which is characterized in that it is corresponding also to store each sample spectrum in sample spectrum library
The thickness value of sample storage medium；
The thickness value determination unit includes:
Thickness value obtains subelement, for obtaining the corresponding sample of the first object sample spectrum from the sample spectrum library
The thickness value of storage medium；
First thickness value determines subelement, for the thickness according to the corresponding sample storage medium of the first object sample spectrum
Value, determines the thickness value of the storage medium to be measured.
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| JP7358185B2 (en) * | 2019-10-15 | 2023-10-10 | 株式会社ディスコ | Thickness measurement device and processing equipment equipped with thickness measurement device |
| CN111276414A (en) * | 2020-02-03 | 2020-06-12 | 长江存储科技有限责任公司 | Detection method and device |
| CN111578848B (en) * | 2020-04-24 | 2022-03-08 | 中国电子科技集团公司第十三研究所 | Method and system for determining line width value of line width standard sample |
| CN111609800B (en) * | 2020-05-25 | 2022-03-08 | 中国电子科技集团公司第十三研究所 | Method for determining value of line width standard sample based on spectrum ellipsometer |
| CN112833801B (en) * | 2021-02-05 | 2022-04-05 | 长鑫存储技术有限公司 | Thin film thickness test method, test system, storage medium, and electronic device |
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