CN111609800B - Method for determining value of line width standard sample based on spectrum ellipsometer - Google Patents
Method for determining value of line width standard sample based on spectrum ellipsometer Download PDFInfo
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- CN111609800B CN111609800B CN202010449981.3A CN202010449981A CN111609800B CN 111609800 B CN111609800 B CN 111609800B CN 202010449981 A CN202010449981 A CN 202010449981A CN 111609800 B CN111609800 B CN 111609800B
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- 238000000034 method Methods 0.000 title claims abstract description 51
- 238000001228 spectrum Methods 0.000 title claims description 7
- 238000005259 measurement Methods 0.000 claims abstract description 60
- 238000005137 deposition process Methods 0.000 claims abstract description 16
- 230000010287 polarization Effects 0.000 claims abstract description 14
- 239000010408 film Substances 0.000 claims description 97
- 235000012431 wafers Nutrition 0.000 claims description 55
- 238000005530 etching Methods 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000006185 dispersion Substances 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 5
- 238000011156 evaluation Methods 0.000 claims description 4
- 238000012937 correction Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 238000004026 adhesive bonding Methods 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 4
- 230000008021 deposition Effects 0.000 abstract description 3
- 239000000523 sample Substances 0.000 description 56
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
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Abstract
The invention provides a method for determining a line width standard sample quantity value based on a spectroscopic ellipsometer, which belongs to the technical field of measurement of micro-nano measuring instruments, and comprises the steps of selecting a nanoscale line width standard sample with a series of quantity values to calibrate the spectroscopic ellipsometer, correcting an incident angle, a light source wavelength and an elliptical polarization angle of the ellipsometer, and ensuring the accurate and reliable quantity value of the spectroscopic ellipsometer; establishing an elliptical polarization measurement model based on a multilayer film deposition process by adopting a accompany method; and measuring the thickness of the film deposited by the multilayer film deposition process by using the corrected spectroscopic ellipsometer, and giving a measurement result and measurement uncertainty. The invention provides a method for determining a line width standard sample value based on a spectroscopic ellipsometer, which is based on a line width standard sample prepared by a multilayer film deposition technology.
Description
Technical Field
The invention belongs to the technical field of measurement of micro-nano measuring instruments, and particularly relates to a method for determining a line width standard sample quantity value based on a spectral ellipsometer.
Background
The line width standard sample is widely applied to the calibration of micro-nano measuring instruments such as a scanning electron microscope, a transmission electron microscope and the like in the fields of semiconductors and microelectronics, and whether the value of the line width standard sample is accurate or not directly influences the reliability of a calibration result of the measuring instrument. The fixed value of the line width standard sample wafer is generally determined by an electron microscope method and an atomic force microscope method, and when the line width value reaches a nanometer level, the uncertainty of measurement of the line width value given by the electron microscope method is large and is generally about 3 nm; and the atomic force microscope cannot realize the measurement of the nanometer-level line width value due to the existence of the probe effect.
Disclosure of Invention
The invention aims to provide a method for determining a line width standard sample quantity value based on a spectrum ellipsometer, and aims to solve the problem that the existing measuring instrument is inaccurate in measuring the nanometer line width.
In order to achieve the purpose, the invention adopts the technical scheme that: the method for determining the value of the line width standard sample based on the spectroscopic ellipsometer comprises the following steps:
selecting a nanometer-scale line width standard sample with a series of values to calibrate the spectroscopic ellipsometer, so that the correction of an incident angle, a light source wavelength and an elliptical polarization angle of the ellipsometer is realized, and the accurate and reliable values of the spectroscopic ellipsometer are ensured;
establishing an elliptical polarization measurement model based on a multilayer film deposition process by adopting a accompany method;
and measuring the thickness of the film deposited by the multilayer film deposition process by using the corrected spectroscopic ellipsometer and giving a measurement result and measurement uncertainty.
As another embodiment of the present application, the establishing of the elliptical polarization measurement model based on the multilayer film deposition process by using the cosheet method specifically includes:
preparing a plurality of silicon wafer wafers serving as a standard sample wafer, a first accompanying wafer and a second accompanying wafer respectively, growing etching medium film layers for etching on the standard sample wafer and the first accompanying wafer simultaneously by adopting a magnetron sputtering process, measuring the thickness and dispersion parameters of the etching medium film layers on the first accompanying wafer by using the spectroscopic ellipsometer, and storing the measured parameters;
adopting a magnetron sputtering process, simultaneously growing a line width medium film layer used as a standard line width on the standard sample wafer and the second accompany wafer, measuring the thickness and dispersion parameters of the line width medium film layer on the second accompany wafer by using the ellipsometer, and storing the measured parameters;
and establishing a multilayer film thickness sample measurement model by using the parameters of the etching medium film layer and the line width medium film layer obtained by measurement, and storing the multilayer film thickness sample measurement model.
As another embodiment of the application, an etching dielectric film layer, a line width dielectric film layer and an etching dielectric film layer are sequentially deposited on the standard sample wafer, and then a silicon wafer is bonded or glued; and then scribing and etching are carried out to prepare a line width standard sample wafer.
As another embodiment of the present application, the measuring the thickness of the thin film deposited by the multilayer film deposition process by using the modified spectroscopic ellipsometer and providing the measurement result and the measurement uncertainty specifically includes:
when the spectrum type ellipsometer is used for measuring the multilayer film thickness sample, the measurement is required to be carried out at a plurality of positions of the multilayer film thickness sample, and the film thickness value and the film thickness uniformity at different positions are determined through the measurement at different positions;
calculating the average value of the thickness values of the line width dielectric film layers measured at different positions as the thickness value of the line width dielectric film layer;
calculating the uncertainty of the thickness measurement; the uncertainty comprises the uncertainty of the spectroscopic ellipsometer and the uniformity of the thickness of the multilayer film sample, wherein the uncertainty of the spectroscopic ellipsometer is evaluated by adopting an MCM method, and the uniformity of the thickness of the multilayer film sample is obtained by measuring at different positions and calculating by adopting a range method.
As another embodiment of the present application, the number of measurement positions is not less than 5 and is uniformly distributed on the surface of the multilayer film thickness sample.
As another embodiment of the present application, the spectroscopic ellipsometer is used to repeatedly measure the line width dielectric film layer of the second companion wafer to obtain a plurality of sets of measurement result values of the polarization angle Ψ and the phase difference Δ, an average value is taken as a mathematical expected value of probability density distribution, a standard deviation is taken as a discrete quantity, and an MCM evaluation algorithm is compiled by Matlab to obtain an uncertainty of the line width standard sample wafer.
As another example of the present application, the spectroscopic ellipsometer is model M-2000 XF.
As another embodiment of the present application, the magnitude of the selected series of magnitude nanoscale line-width standard samples is in the range of 2nm to 1000 nm.
The method for determining the value of the line width standard sample based on the spectroscopic ellipsometer has the advantages that: compared with the prior art, the method for determining the value of the line width standard sample based on the spectroscopic ellipsometer, disclosed by the invention, is characterized in that the line width standard sample prepared based on the multilayer film deposition technology is converted into the line width through the deposited medium thin film, and the thickness value of the thin film is measured by the spectroscopic ellipsometer in the medium thin film deposition process and is used as the line width value of the final line width standard sample, so that the accurate measurement and determination of the line width value are realized. By the method, the accuracy of the value of the line width can be controlled from the source due to measurement in the preparation process of the multilayer film, so that errors caused by measurement after the manufacturing is finished are avoided, and the accuracy of the line width serving as a standard sample is further improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed for the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a block flow diagram of a method for determining a line width standard sample quantity value based on a spectroscopic ellipsometer according to an embodiment of the present invention;
fig. 2 is a schematic structural view of the first companion wafer and the silicon wafer synchronously growing in S102 provided in fig. 1;
fig. 3 is a schematic structural view of the second companion wafer and the silicon wafer synchronously growing in S102 provided in fig. 1;
FIG. 4 is a schematic structural diagram of a sample multilayer film deposited by the multilayer film deposition process according to an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of the multi-layer film sample wafer provided in FIG. 4 after dicing;
fig. 6 is a process flow diagram for preparing a line width standard sample wafer by grinding, polishing and etching after the multi-layer film sample wafer provided in fig. 5 is scribed.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1, a method for determining a line width standard wafer value based on a spectroscopic ellipsometer according to the present invention will now be described. The method for determining the value of the line width standard sample based on the spectroscopic ellipsometer comprises the following steps:
s101, selecting a nanometer line width standard sample with a series of values to calibrate the spectroscopic ellipsometer, correcting an incident angle, a light source wavelength and an elliptical polarization angle of the ellipsometer, and ensuring the accurate and reliable values of the spectroscopic ellipsometer;
s102, establishing an elliptical polarization measurement model based on a multilayer film deposition process by adopting a accompany method;
and S103, measuring the thickness of the film deposited by the multilayer film deposition process by using the corrected spectroscopic ellipsometer and giving a measurement result and measurement uncertainty.
Compared with the prior art, the method for determining the value of the line width standard sample based on the spectroscopic ellipsometer has the advantages that the line width standard sample prepared based on the multilayer film deposition technology is converted into the line width through the deposited dielectric thin film, and the thickness value of the thin film is measured by the spectroscopic ellipsometer in the process of the dielectric thin film deposition technology and is used as the final line width value of the line width standard sample, so that the measurement of the line width value is realized. The uncertainty of measurement of the film thickness by using the spectroscopic ellipsometer is usually about 0.5nm, and the method has better uncertainty of measurement compared with an electron microscope method, and improves the accuracy of the prepared line width standard sample by measuring the film layer serving as the line width in the preparation process. By the method, the accuracy of the value of the line width can be controlled from the source due to measurement in the preparation process of the multilayer film, so that errors caused by measurement after the manufacturing is finished are avoided, and the accuracy of the line width serving as a standard sample is further improved.
Referring to fig. 2 and 3, in S101, the method for establishing an ellipsometric measurement model based on a multilayer film deposition process by using a coscopy method specifically includes:
step one, referring to fig. 2, preparing three silicon wafers as a standard sample wafer, a first accompanying wafer and a second accompanying wafer, simultaneously growing an etching medium film layer for etching on the standard sample wafer and the first accompanying wafer by adopting a magnetron sputtering process, measuring the thickness and dispersion parameters of the etching medium film layer on the first accompanying wafer by using the spectroscopic ellipsometer, and storing the measured parameters;
step two, referring to fig. 3, a magnetron sputtering process is adopted, a line width dielectric film layer used as a standard line width is simultaneously grown on the standard sample wafer and the second coupon, the ellipsometer is used for measuring the thickness and dispersion parameters of the line width dielectric film layer on the second coupon, and the measured parameters are stored;
and step three, establishing a multilayer film thickness sample measurement model by using the parameters of the etching medium film layer and the line width medium film layer obtained by measurement, and storing the multilayer film thickness sample measurement model.
The method is suitable for establishing a model at the initial stage, and the model can be directly called to measure the thickness of the multilayer film subsequently, so that the thickness of the line width dielectric film layer is accurately determined, and the value is the line width value of a line width standard sample wafer prepared by adopting a multilayer film deposition process.
As a specific implementation manner of the embodiment of the present invention, referring to fig. 4 to 6, in S101, an etching dielectric film layer, a line width dielectric film layer, and an etching dielectric film layer are sequentially deposited on the standard sample wafer, and then a silicon wafer is bonded or glued; and then scribing, grinding, polishing and etching are carried out to prepare a line width standard sample wafer.
As a specific implementation manner of the embodiment of the present invention, in S103, the measuring the thickness of the thin film deposited by the multilayer film deposition process by using the corrected spectroscopic ellipsometer and providing the measurement result and the measurement uncertainty specifically includes:
step one, when the spectrum ellipsometer is used for measuring a multilayer film thickness sample, measuring the multilayer film thickness sample at a plurality of positions of the multilayer film thickness sample, and determining the film thickness value and the film thickness uniformity at different positions through the measurement at different positions;
calculating the average value of the thickness values of the line width dielectric film layers measured at different positions as the thickness value of the line width dielectric film layer;
step three, calculating the uncertainty of the thickness measurement; the uncertainty comprises the uncertainty of the spectroscopic ellipsometer and the uniformity of the thickness of the multilayer film sample, wherein the uncertainty of the spectroscopic ellipsometer is evaluated by adopting an MCM method, and the uniformity of the thickness of the multilayer film sample is obtained by measuring at different positions and calculating by adopting a range method.
As a specific implementation manner of the embodiment of the present invention, in the step one of S103, not less than 5 measurement positions are uniformly distributed on the surface of the multilayer film thickness sample wafer. For example, 5, 6, 7, 8, etc. different positions are selected.
As a specific implementation manner of the embodiment of the present invention, in step three of S103, the spectroscopic ellipsometer is used to repeatedly measure the line width dielectric film layer of the second companion film, so as to obtain a plurality of groups of measurement result values of the polarization angle Ψ and the phase difference Δ, an average value is taken as a mathematical expected value of probability density distribution, a standard deviation is taken as a discrete quantity, and an MCM evaluation algorithm is compiled by using Matlab, so as to obtain uncertainty of the line width standard sample.
Taking a silica film with a thickness of 20nm as an example, the measurement is repeated 6 times, and the obtained information of probability density distribution of Ψ and Δ is shown in table 1.
TABLE 1 probability Density distribution parameters
The MCM evaluation algorithm was programmed using Matlab and evaluated to determine a 20nm thick silica film with a measurement uncertainty of U-0.1 nm.
As a specific implementation manner of the embodiment of the invention, the model of the spectroscopic ellipsometer is M-2000 XF. The spectroscopic ellipsometer determines the refractive index and thickness of the thin film by using the reflection of polarized light on the upper and lower surfaces of the thin film and obtaining the relationship between optical parameters and polarization states through the Fresnel formula. Psi and delta are obtained through measurement of a spectrum type ellipsometer, psi and delta are functions of the film thickness d1, a measurement model is established through a computer, and the film thickness of the sample to be measured can be obtained through fitting solution.
As a specific implementation manner of the embodiment of the invention, the magnitude of the selected series magnitude of the nanometer-scale line width standard sample wafer is 2nm-1000 nm. For example, 10nm, 20nm, 25nm, 30nm, etc.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (6)
1. The method for determining the value of the line width standard sample based on the spectroscopic ellipsometer is characterized by comprising the following steps of:
selecting a nanometer-scale line width standard sample with a series of values to calibrate the spectroscopic ellipsometer, so that the correction of an incident angle, a light source wavelength and an elliptical polarization angle of the ellipsometer is realized, and the accurate and reliable values of the spectroscopic ellipsometer are ensured;
establishing an elliptical polarization measurement model based on a multilayer film deposition process by adopting a accompany method;
measuring the thickness of the film deposited by the multilayer film deposition process by using the corrected spectroscopic ellipsometer and giving a measurement result and measurement uncertainty;
the method for establishing the elliptical polarization measurement model based on the multilayer film deposition process by adopting the accompany method specifically comprises the following steps:
preparing a plurality of silicon wafer wafers serving as a standard sample wafer, a first accompanying wafer and a second accompanying wafer respectively, growing etching medium film layers for etching on the standard sample wafer and the first accompanying wafer simultaneously by adopting a magnetron sputtering process, measuring the thickness and dispersion parameters of the etching medium film layers on the first accompanying wafer by using the spectroscopic ellipsometer, and storing the measured parameters;
adopting a magnetron sputtering process, simultaneously growing a line width medium film layer used as a standard line width on the standard sample wafer and the second accompany wafer, measuring the thickness and dispersion parameters of the line width medium film layer on the second accompany wafer by using the ellipsometer, and storing the measured parameters;
establishing a multilayer film thickness sample measurement model by using the parameters of the etching medium film layer and the line width medium film layer obtained by measurement, and storing the multilayer film thickness sample measurement model;
depositing an etching medium film layer, a line width medium film layer and an etching medium film layer on the standard sample wafer in sequence, and then bonding or gluing the silicon wafer; and then scribing and etching are carried out to prepare a line width standard sample wafer.
2. The method for determining the value of the line width standard wafer based on the spectroscopic ellipsometer as set forth in claim 1, wherein the measuring the thickness of the thin film deposited by the multilayer film deposition process by using the spectroscopic ellipsometer after the correction and the measurement result and the measurement uncertainty are given by:
when the spectrum type ellipsometer is used for measuring the multilayer film thickness sample, the measurement is required to be carried out at a plurality of positions of the multilayer film thickness sample, and the film thickness value and the film thickness uniformity at different positions are determined through the measurement at different positions;
calculating the average value of the thickness values of the line width dielectric film layers measured at different positions as the thickness value of the line width dielectric film layer;
calculating the uncertainty of the thickness measurement; the uncertainty comprises the uncertainty of the spectroscopic ellipsometer and the uniformity of the thickness of the multilayer film sample, wherein the uncertainty of the spectroscopic ellipsometer is evaluated by adopting an MCM method, and the uniformity of the thickness of the multilayer film sample is obtained by measuring at different positions and calculating by adopting a range method.
3. The method of claim 2, wherein the measurement positions are not less than 5 and are uniformly distributed on the surface of the multilayer film thickness sample.
4. The method for determining the quantity of the standard linewidth sample based on the spectroscopic ellipsometer as claimed in claim 2, wherein the spectroscopic ellipsometer is used to repeatedly measure the linewidth dielectric film layer of the second companion wafer to obtain a plurality of sets of measurement result values of the polarization angle Ψ and the phase difference Δ, the average value is taken as the mathematical expectation value of the probability density distribution, the standard deviation is taken as the discrete quantity, and the MCM evaluation algorithm is programmed by Matlab to obtain the uncertainty of the standard linewidth sample.
5. The method for determining a line width standards sheet quantity based on a spectroscopic ellipsometer of claim 1, wherein the spectroscopic ellipsometer is M-2000 XF.
6. The method of claim 1, wherein the selected series of values of the nano-scale line width standard is in the range of 2nm to 1000 nm.
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| WO2002095372A1 (en) * | 2001-05-22 | 2002-11-28 | Horiba, Ltd. | Thin-film characteristic measuring method using spectroellipsometer |
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