CN107577366B - Display panel and display device - Google Patents
Display panel and display device Download PDFInfo
- Publication number
- CN107577366B CN107577366B CN201710740164.1A CN201710740164A CN107577366B CN 107577366 B CN107577366 B CN 107577366B CN 201710740164 A CN201710740164 A CN 201710740164A CN 107577366 B CN107577366 B CN 107577366B
- Authority
- CN
- China
- Prior art keywords
- sensing
- layer
- resistor
- sensing resistor
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 claims abstract description 97
- 230000006698 induction Effects 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims description 39
- 238000001514 detection method Methods 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 12
- 238000009413 insulation Methods 0.000 claims 4
- 230000035945 sensitivity Effects 0.000 abstract description 13
- 230000009286 beneficial effect Effects 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 176
- 239000010408 film Substances 0.000 description 26
- 239000010409 thin film Substances 0.000 description 7
- 230000008859 change Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000003825 pressing Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000010008 shearing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Images
Landscapes
- Force Measurement Appropriate To Specific Purposes (AREA)
Abstract
The invention discloses a display panel and a display device. The display panel comprises a substrate, the substrate comprises a first surface and a second surface which are opposite, at least one pressure sensing bridge is arranged on one side of the first surface, and a first sensing resistor, a second sensing resistor, a third sensing resistor and a fourth sensing resistor in the pressure sensing bridge are made of the same material; the distances between the at least one induction resistor and the other induction resistors and the second surface of the substrate are unequal; the sensing resistor far away from the second surface and the film layer between the second surface form an integral structure, the integral structure is provided with a third surface opposite to the second surface, the third surface is provided with a groove, and the sensing resistor close to the second surface is arranged in the groove. According to the technical scheme provided by the embodiment of the invention, the beneficial effects of increasing the pressure strain difference of the pressure sensing bridge and further improving the sensitivity of the pressure sensing bridge are achieved.
Description
Technical Field
The present invention relates to touch technologies, and in particular, to a display panel and a display device.
Background
The addition of the touch function enables a user to operate the electronic equipment by touching the mark on the display panel with a finger, and the man-machine interaction process is simplified. In order to better meet the user requirements, a pressure sensor capable of acquiring touch position information and touch pressure is usually arranged in the display panel, so that the application range of the touch display technology is expanded.
In the prior art, the pressure sensor comprises a pressure sensing bridge, the pressure sensing bridge is formed by connecting four sensing resistors according to the Wheatstone bridge principle, and when the display panel is pressed, the resistance values of the resistors in the pressure sensing bridge change due to the action of shearing force from the corresponding position on the display panel, so that the voltage output value of the pressure sensing bridge changes, and the touch pressure is determined accordingly. Due to the limitation of the arrangement positions of the four sensing resistors, the pressure strain difference of the pressure sensing bridge is small, and the sensitivity is low.
Disclosure of Invention
The invention provides a display panel and a display device, which are used for increasing the pressure strain difference of a pressure sensing bridge and improving the sensitivity of the pressure sensing bridge.
In a first aspect, an embodiment of the present invention provides a display panel, where the display panel includes a substrate;
the substrate comprises a first surface and a second surface which are opposite, and at least one pressure sensing bridge is arranged on one side of the first surface;
the pressure sensing bridge comprises a first power signal input end, a second power signal input end, a first sensing signal detection end and a second sensing signal detection end, and further comprises a first sensing resistor, a second sensing resistor, a third sensing resistor and a fourth sensing resistor;
a first end of the first sensing resistor and a first end of the fourth sensing resistor are electrically connected with the first power signal input end, a second end of the first sensing resistor and a first end of the second sensing resistor are electrically connected with the first sensing signal detection end, a second end of the fourth sensing resistor and a first end of the third sensing resistor are electrically connected with the second sensing signal detection end, and a second end of the second sensing resistor and a second end of the third sensing resistor are electrically connected with the second power signal input end;
the first power signal input end and the second power signal input end are used for inputting bias voltage signals to the pressure sensing bridge; the first sensing signal detection end and the second sensing signal detection end are used for outputting a pressure sensing detection signal from the pressure sensing bridge;
the first sensing resistor, the second sensing resistor, the third sensing resistor and the fourth sensing resistor are made of the same material;
the distances between the at least one induction resistor and the other induction resistors and the second surface of the substrate are unequal; the sensing resistor far away from the second surface and the film layer between the second surface form an integral structure, the integral structure is provided with a third surface opposite to the second surface, the third surface is provided with a groove, and the sensing resistor close to the second surface is arranged in the groove.
In a second aspect, an embodiment of the present invention further provides a display device, where the display device includes the display panel described in the first aspect.
The display panel provided by the embodiment of the invention comprises a substrate, wherein the substrate comprises a first surface and a second surface which are opposite, one side of the first surface is provided with at least one pressure sensing bridge, materials of a first sensing resistor, a second sensing resistor, a third sensing resistor and a fourth sensing resistor in the pressure sensing bridge are the same, the distance between the at least one sensing resistor and the other sensing resistors from the second surface of the substrate is unequal, the sensing resistor far away from the second surface and a film layer between the second surface form an integral structure, the integral structure is provided with a third surface opposite to the second surface, the third surface is provided with a groove, and the sensing resistor close to the second surface is arranged in the groove, so that the pressure strain difference of the pressure sensing bridge is increased, and the sensitivity of the pressure sensing bridge is improved.
Drawings
Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments made with reference to the following drawings:
fig. 1 is a schematic diagram of a partial top view structure of a display panel according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view taken along the dashed line AB of FIG. 1;
FIG. 3 is a schematic view of a further cross-sectional configuration taken along the dashed line AB of FIG. 1;
FIG. 4 is a schematic view of a further cross-sectional configuration taken along the dashed line AB of FIG. 1;
FIG. 5 is a schematic view of a further cross-sectional configuration taken along the dashed line AB of FIG. 1;
FIG. 6 is a schematic view of a further cross-sectional configuration taken along the dashed line AB of FIG. 1;
FIG. 7 is a schematic view of a further cross-sectional configuration taken along the dashed line AB of FIG. 1;
FIG. 8 is a schematic view of a further cross-sectional configuration taken along the dashed line AB of FIG. 1;
FIG. 9 is a schematic view of a further cross-sectional configuration taken along the dashed line AB of FIG. 1;
FIG. 10 is a schematic view of a further cross-sectional configuration taken along the dashed line AB of FIG. 1;
fig. 11 is a schematic structural diagram of a display device according to an embodiment of the present invention.
Detailed Description
To further illustrate the technical means and effects of the present invention adopted to achieve the predetermined objects, the following detailed description of the embodiments, structures, features and effects of the display panel and the manufacturing method thereof according to the present invention will be made with reference to the accompanying drawings and preferred embodiments.
The embodiment of the invention provides a display panel, which comprises a substrate;
the substrate comprises a first surface and a second surface which are opposite, and at least one pressure sensing bridge is arranged on one side of the first surface;
the pressure sensing bridge comprises a first power signal input end, a second power signal input end, a first sensing signal detection end and a second sensing signal detection end, and further comprises a first sensing resistor, a second sensing resistor, a third sensing resistor and a fourth sensing resistor;
a first end of the first sensing resistor and a first end of the fourth sensing resistor are electrically connected with the first power signal input end, a second end of the first sensing resistor and a first end of the second sensing resistor are electrically connected with the first sensing signal detection end, a second end of the fourth sensing resistor and a first end of the third sensing resistor are electrically connected with the second sensing signal detection end, and a second end of the second sensing resistor and a second end of the third sensing resistor are electrically connected with the second power signal input end;
the first power signal input end and the second power signal input end are used for inputting bias voltage signals to the pressure sensing bridge; the first sensing signal detection end and the second sensing signal detection end are used for outputting a pressure sensing detection signal from the pressure sensing bridge;
the first sensing resistor, the second sensing resistor, the third sensing resistor and the fourth sensing resistor are made of the same material;
the distances between the at least one induction resistor and the other induction resistors and the second surface of the substrate are unequal; the sensing resistor far away from the second surface and the film layer between the second surface form an integral structure, the integral structure is provided with a third surface opposite to the second surface, the third surface is provided with a groove, and the sensing resistor close to the second surface is arranged in the groove.
The display panel provided by the embodiment of the invention comprises a substrate, wherein the substrate comprises a first surface and a second surface which are opposite, one side of the first surface is provided with at least one pressure sensing bridge, materials of a first sensing resistor, a second sensing resistor, a third sensing resistor and a fourth sensing resistor in the pressure sensing bridge are the same, the distance between the at least one sensing resistor and the other sensing resistors from the second surface of the substrate is unequal, the sensing resistor far away from the second surface and a film layer between the second surface form an integral structure, the integral structure is provided with a third surface opposite to the second surface, the third surface is provided with a groove, and the sensing resistor close to the second surface is arranged in the groove, so that the pressure strain difference of the pressure sensing bridge is increased, and the sensitivity of the pressure sensing bridge is improved.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments of the present invention without any creative work belong to the protection scope of the present invention.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other embodiments that depart from the specific details disclosed herein, and it will be recognized by those skilled in the art that the present invention may be practiced without these specific details.
Next, the present invention is described in detail with reference to the schematic drawings, and in the detailed description of the embodiments of the present invention, the schematic drawings showing the structure of the device are not partially enlarged in general scale for convenience of description, and the schematic drawings are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and height should be included in the actual fabrication.
Fig. 1 is a schematic diagram of a partial top view structure of a display panel according to an embodiment of the present invention. Fig. 2 is a schematic sectional view along a broken line AB in fig. 1. As shown in fig. 1 and 2, the display panel includes a substrate 110, the substrate 110 includes a first surface 111 and a second surface 112 opposite to each other, and at least one pressure sensing bridge 200 is disposed on one side of the first surface 111. Referring to fig. 1, the pressure sensing bridge 200 includes a first power signal input terminal 221, a second power signal input terminal 222, a first sensing signal detection terminal 231, and a second sensing signal detection terminal 232, the pressure sensing bridge 200 further includes a first sensing resistor 211, a second sensing resistor 212, a third sensing resistor 213, and a fourth sensing resistor 214, a first end a of the first sensing resistor 211 and a first end a 'of the fourth sensing resistor 214 are electrically connected to the first power signal input terminal 221, a second end b of the first sensing resistor 211 and a first end b' of the second sensing resistor 212 are electrically connected to the first sensing signal detection terminal 231, a second end d of the fourth sensing resistor 214 and a first end d 'of the third sensing resistor 213 are electrically connected to the second sensing signal detection terminal 232, a second end c of the second sensing resistor 212 and a second end c' of the third sensing resistor 213 are electrically connected to the second power signal detection terminal 232 The input terminal 222 is electrically connected, the first power signal input terminal 221 and the second power signal input terminal 222 are used for inputting a bias voltage signal to the pressure sensing bridge 200, and the first sensing signal detection terminal 231 and the second sensing signal detection terminal 232 are used for outputting a pressure sensing detection signal from the pressure sensing bridge 200. The first, second, third and fourth sensing resistors 211, 212, 213 and 214 are made of the same material, as shown in fig. 2, at least one of the sensing resistors has an unequal distance from the rest of the sensing resistors to the second surface 112 of the substrate 110, the sensing resistor far away from the second surface 112 and the film layer between the second surface 112 form an integral structure, the integral structure has a third surface 113 opposite to the second surface 112, the third surface 113 is provided with a groove 300, and the sensing resistor close to the second surface 112 is arranged in the groove 300.
It should be noted that, in fig. 2, distances between the third sensing resistor 213 and the fourth sensing resistor 214 and the second surface 112 of the substrate 110 are not equal, the third sensing resistor 213 is a sensing resistor far away from the second surface 112, and the fourth sensing resistor 214 is a sensing resistor near the second surface 112, so that a film layer between the sensing resistor far away from the second surface 112 and the second surface 112 includes the buffer layer 120, the gate insulating layer 140, and the substrate 110, and the buffer layer 120, the gate insulating layer 140, and the substrate 110 form an integrated structure, and the recess 300 is disposed on the third surface 113 opposite to the second surface 112 in the integrated structure, and it is noted that the substrate 110 is located between the sensing resistor far away from the second surface 112 and the second surface 112, and belongs to a part of the integrated structure. It should be further noted that the working principle of the pressure sensing bridge is as follows: the first sensing resistor 211, the second sensing resistor 212, the third sensing resistor 213 and the fourth sensing resistor 214 form a wheatstone bridge structure, when a bias voltage signal is input to the first power signal input end 221 and the second power signal input end 222, each branch in the wheatstone bridge has a current passing through, at this time, when the display panel is pressed, the internal resistors (including the first sensing resistor 211, the second sensing resistor 212, the third sensing resistor 213 and the fourth sensing resistor 214) of the pressure sensing bridge deform due to the shearing force from the corresponding position on the display panel, and further the resistance value of the resistors changes, so that the difference between the output electrical signals of the first sensing signal measuring end 231 and the second sensing signal measuring end 232 of the pressure sensing bridge is different from the difference between the output electrical signals of the first sensing signal measuring end 231 and the second sensing signal measuring end 232 of the pressure sensing bridge when no pressure is pressed, accordingly, the magnitude of the touch pressure can be determined. Further, let us say that the bias voltage input by the first power signal input end 221 and the second power signal input end 222 is Uin, and the difference between the output electrical signals of the first sensing signal measuring end 231 and the second sensing signal measuring end 232 is Uout; when no pressing force is applied, the resistance of the first sensing resistor 211 is R1, the resistance of the second sensing resistor 212 is R2, the resistance of the third sensing resistor 213 is R3, and the resistance of the fourth sensing resistor 214 is R4; after the pressing force is applied, the resistance change amount of the first sensing resistor 211 is Δ R1, the resistance change amount of the second sensing resistor 212 is Δ R2, the resistance change amount of the third sensing resistor 213 is Δ R3, and the resistance change amount of the fourth sensing resistor 214 is Δ R4, so that Uout ═ Uin [ (R1+ Δ R1)/(R1+ Δ R1+ R2+ Δ R2) - (R4+ Δ R4)/(R3+ Δ R3+ R4+ Δ R4) ], and therefore, when at least one of an increase in Δ R1, a decrease in Δ R2, an increase in Δ R3, and a decrease in Δ R4 occurs, the Uout can be increased, and the sensitivity of the pressure sensing bridge is further improved. It can be understood that, under the action of the same pressing force, along the stacking direction of the film layers on the array substrate, the deformation amounts of the same resistors disposed at the positions with different distances from the second surface 112 of the substrate 110 are different, and the corresponding resistance value variation amounts are different, accordingly, in this embodiment, the distances from at least one sense resistor and the rest of the sense resistors to the second surface 112 of the substrate 110 are different, and compared with a scheme in the prior art in which four sense resistors are disposed with equal distances from the second surface 112 of the substrate 110, the above-mentioned scheme of this embodiment can cause at least one of an increase in Δ R1, a decrease in Δ R2, an increase in Δ R3, and a decrease in Δ R4 to occur, thereby achieving the beneficial effect of improving the sensitivity. It should be noted that, according to the above-mentioned reasoning, the variation trends of Δ R1 and Δ R3 are the same, and the variation trends of Δ R2 and Δ R4 are the same, so that when the distances between the two sense resistors and the remaining sense resistors are not equal to the distance from the second surface 112 of the substrate 110, the two sense resistors should be R1 and R3 or the two sense resistors should be R2 and R4. Therefore, for the first sensing resistor 211 and the fourth sensing resistor 214 not shown in fig. 2, the first sensing resistor 211 may be disposed on the third surface 113, the second sensing resistor 212 may be disposed on the third surface 113 or in the recess 300, or both the first sensing resistor 211 and the second sensing resistor 212 may be disposed in the recess 300. It should be understood that fig. 2 only illustrates the arrangement positions of the third sensing resistor 213 and the fourth sensing resistor 214 as an example, in other embodiments of this embodiment, the third sensing resistor 213 is disposed in the groove 300, and the fourth sensing resistor 214 is disposed on the third surface 113, or the third sensing resistor 213 and the fourth sensing resistor 214 are disposed on the third surface 113 or in the groove 300 at the same time, and then the arrangement positions of the first sensing resistor 211 and the second sensing resistor 212 are adjusted according to the analysis of the operation principle of the pressure sensing bridge 200. For the case that there are at least two sense resistors disposed in the recess 300, at least two sense resistors may be disposed in the same recess 300 at the same time, or each sense resistor may be disposed in one recess 300.
Preferably, the sensing resistors far away from the second surface 112 may be the first sensing resistor 211 and the third sensing resistor 213, and the sensing resistors near to the second surface 112 may be the second sensing resistor 212 and the fourth sensing resistor 214, or the sensing resistors far away from the second surface 112 may be the second sensing resistor 212 and the fourth sensing resistor 214, and the sensing resistors near to the second surface 112 may be the first sensing resistor 211 and the third sensing resistor 213.
It should be noted that, according to Uout ═ Uin [ (R1+ Δ R1)/(R1+ Δ R1+ R2+ Δ R2) - (R4+ Δ R4)/(R3+ Δ R3+ R4+ Δ R4) ], when Δ R1 and Δ R3 are increased simultaneously and Δ R2 and Δ R4 are decreased simultaneously, the increase amount of Uout can be maximized relative to other cases, and the sensitivity of the pressure sensing bridge is further effectively improved, so the above setting is preferably performed for four sense resistor positions in this embodiment.
In this embodiment, the formation of the groove 300 enables four sensing resistors with different distances from the second surface 112 of the substrate 110 to be formed by the same material in the same process step, so that on one hand, the sensitivity of the pressure sensing bridge is improved, and on the other hand, under the condition that the thicknesses of the four sensing resistors are the same, the resistance values of the four sensing resistors can be adjusted by directly controlling the areas of the cross sections of the sensing resistors perpendicular to the thickness direction, so as to conveniently obtain the first sensing resistor 211, the second sensing resistor 212, the third sensing resistor 213 and the fourth sensing resistor 214, which have resistance values satisfying the initial proportional relationship, and simplify the calculation and operation processes.
It should be noted that, in this embodiment, the depth of the groove 300 is smaller than the total thickness of the above-mentioned integral structure, and it is understood that the film layer between the sensing resistor far away from the second surface 112 and the second surface 112 at least includes the substrate 110, and may further include at least one insulating layer. For the case that the film layer between the sensing resistor far away from the second surface 112 and the second surface 112 only includes the substrate 110, the groove 300 is formed on the first surface 111 of the substrate 110, and the depth is smaller than the thickness of the substrate 110; for the case where the film layer between the sensing resistor far from the second surface 112 and the second surface 112 includes the substrate 110 and at least one insulating layer, the groove 300 is formed on the surface of the at least one insulating layer far from the substrate 110, and the depth is less than the sum of the thicknesses of the at least one insulating layer and the substrate 110.
The display panel provided by the embodiment includes a substrate 110, the substrate 110 includes a first surface 111 and a second surface 112 opposite to each other, at least one pressure sensing bridge 200 is disposed on one side of the first surface 111, a first sensing resistor 211 and a second sensing resistor 212 in the pressure sensing bridge 200, the third and fourth sensing resistors 213 and 214 are made of the same material, at least one sensing resistor is not equal to the distance between the other sensing resistors and the second surface 112 of the substrate 110, the sensing resistor far away from the second surface 112 and the film layer between the second surface 112 form an integral structure, the integral structure has a third surface 113 opposite to the second surface 112, the third surface 113 is provided with a groove 300, the sensing resistor near the second surface 112 is disposed in the groove 300, so that the pressure strain difference of the pressure sensing bridge 200 is increased, and the sensitivity of the pressure sensing bridge 200 is further improved.
With continued reference to fig. 1, the substrate 110 includes a display area 101 and a non-display area 102 disposed around the display area 101, and the at least one pressure sensing bridge 200 may be disposed in the non-display area 102. Such an arrangement enables the pressure sensing bridge 200 to have a sufficient space for wiring, thereby reducing the wiring difficulty of the pressure sensing bridge 200, and enables the groove 300 for arranging the sense resistor close to the second surface 112 of the substrate 110 to avoid more elements in the display area 101, thereby avoiding affecting the normal operation of the display panel.
Optionally, as shown in fig. 1, a component of an extension length of the first sensing resistor 211 from the first end a to the second end b in the first extending direction X is greater than a component of the extension length of the second sensing resistor 212 from the first end b 'to the second end c in the second extending direction Y is greater than a component of the extension length of the first sensing resistor X in the first extending direction Y, a component of an extension length of the third sensing resistor 213 from the first end d' to the second end c 'in the first extending direction X is greater than a component of the extension length of the third sensing resistor 213 in the second extending direction Y, a component of an extension length of the fourth sensing resistor 214 from the first end a' to the second end d in the second extending direction Y is greater than a component of the extension length of the fourth sensing resistor 214 in the first extending direction X, and the first extending direction X and the second extending direction Y are parallel to a plane of the substrate 110 and intersect with each other.
The arrangement is such that the first and third sense resistors 211 and 213 sense strain in the first extending direction X, and the second and fourth sense resistors 212 and 214 sense strain in the second extending direction Y. Because the direction of the induced strain of the first sensing resistor 211 is different from the direction of the induced strain of the second sensing resistor 212, and the direction of the induced strain of the fourth sensing resistor 214 is different from the direction of the induced strain of the third sensing resistor 213, the first sensing resistor 211, the second sensing resistor 212, the third sensing resistor 213 and the fourth sensing resistor 214 can be distributed at the same position in space or at positions close to each other in distance, so that the first sensing resistor 211 and the second sensing resistor 212, the third sensing resistor 213 and the fourth sensing resistor 214 have synchronous temperature changes, the influence of temperature difference is eliminated, and the pressure sensing precision is improved.
As shown in fig. 2, the thickness of the sensing resistor located in the recess 300 may be smaller than the depth of the recess 300. Such an arrangement enables a larger distance between the sensing resistor far from the second surface 112 and the sensing resistor near the second surface 112, so as to increase the strain difference of the pressure sensing bridge 200 and better improve the sensitivity of the pressure sensing bridge 200.
With continued reference to fig. 2, the bottom of the recess 300 may be spaced from the second surface 112 by a distance less than the thickness of the substrate 110. That is, the groove 300 is dug from the third surface 113 to the inside of the substrate 110, such an arrangement makes the depth of the groove 300 larger, and the distance between the sense resistor arranged in the groove 300 and the sense resistor located on the third surface 113 is larger, so that the beneficial effects of increasing the strain difference of the pressure sensing bridge 200 and improving the sensitivity of the pressure sensing bridge 200 can be achieved.
Illustratively, as shown in fig. 2, a buffer layer 120, an active layer 130, a gate insulating layer 140, a gate metal layer 150, a first insulating layer 160, and a source-drain metal layer 170 are sequentially stacked on the substrate 110. Wherein the buffer layer 120 serves to block oxygen and moisture, prevent moisture or impurities from diffusing through the substrate 110, and provide a flat surface on the upper surface (first surface 111) of the substrate 110; the active layer 130 includes a semiconductor active layer of a plurality of thin film transistors, which is formed by doping N-type impurity ions or P-type impurity ions to form source and drain regions, and a region between the source and drain regions is a channel region in which impurities are not doped; the gate insulating layer 140 includes an inorganic layer such as silicon oxide, silicon nitride, or metal oxide, and may include a single layer or a plurality of layers; the gate metal layer 150 includes gate electrodes of a plurality of thin film transistors, the gate electrodes being located in a specific region on the gate insulating layer 140; the first insulating layer 160 may be formed of an insulating inorganic layer such as silicon oxide or silicon nitride, or may be formed of an insulating organic layer; the source-drain metal layer 170 includes source and drain electrodes of a plurality of thin film transistors, which are electrically connected (or coupled) to the source and drain regions through contact holes, respectively, which are formed by selectively removing the gate insulating layer 140 and the first insulating layer 160. Optionally, the first sensing resistor 211, the second sensing resistor 212, the third sensing resistor 213, and the fourth sensing resistor 214 are disposed on the same layer as the gate metal layer 150, a film layer between the sensing resistor far from the second surface 112 and the second surface 112 includes the gate insulating layer 140, the buffer layer 120, and the substrate 110, and a depth of the groove 300 is smaller than a sum of thicknesses of the gate insulating layer 140, the buffer layer 120, and the substrate 110.
Fig. 3 is a schematic view of another cross-sectional structure along the dashed line AB in fig. 1. As shown in fig. 3, a buffer layer 120, an active layer 130, a gate insulating layer 140, a gate metal layer 150, a first insulating layer 160, and a source-drain metal layer 170 are sequentially stacked on the substrate 110. Optionally, the first sensing resistor 211, the second sensing resistor 212, the third sensing resistor 213, and the fourth sensing resistor 214 may be disposed on the same layer as the active layer 130, a film layer between the sensing resistor far from the second surface 112 and the second surface 112 includes the buffer layer 120 and the substrate 110, and a depth of the groove 300 is smaller than a sum of thicknesses of the buffer layer 120 and the substrate 110.
Fig. 4 is a schematic view of another cross-sectional structure along the dashed line AB in fig. 1. As shown in fig. 4, a buffer layer 120, an active layer 130, a gate insulating layer 140, a gate metal layer 150, a first insulating layer 160, and a source-drain metal layer 170 are sequentially stacked on the substrate 110. Optionally, the first sensing resistor 211, the second sensing resistor 212, the third sensing resistor 213, and the fourth sensing resistor 214 are disposed on the same layer as the source-drain metal layer 170, a film layer between the sensing resistor far from the second surface 112 and the second surface 112 includes the first insulating layer 160, the gate insulating layer 140, the buffer layer 120, and the substrate 110, and a depth of the groove 300 is smaller than a sum of thicknesses of the first insulating layer 160, the gate insulating layer 140, the buffer layer 120, and the substrate 110.
Fig. 5 is a schematic view of another cross-sectional structure along the dashed line AB in fig. 1. As shown in fig. 5, a buffer layer 120, an active layer 130, a gate insulating layer 140, a gate metal layer 150, a first insulating layer 160, and a source-drain metal layer 170 are sequentially stacked on the substrate 110. Optionally, the display panel further includes a second insulating layer 180 located on a side of the source-drain metal layer 170 away from the substrate 110, and a touch routing layer 190 located on a side of the second insulating layer 180 away from the substrate 110, the first sensing resistor 211, the second sensing resistor 212, the third sensing resistor 213, and the fourth sensing resistor 214 are disposed on the same layer as the touch routing layer 190, a film layer between the sensing resistor away from the second surface 112 and the second surface 112 includes the second insulating layer 180, the first insulating layer 160, the gate insulating layer 140, the buffer layer 120, and the substrate 110, and a depth of the groove 300 is smaller than a sum of thicknesses of the second insulating layer 180, the first insulating layer 160, the gate insulating layer 140, the buffer layer 120, and the substrate 110.
Fig. 6 is a schematic view of another cross-sectional structure along the dashed line AB in fig. 1. As shown in fig. 6, a buffer layer 120, a gate metal layer 150, a gate insulating layer 140, an active layer 130, a first insulating layer 160, and a source-drain metal layer 170 are sequentially stacked on the substrate 110. Optionally, the first sensing resistor 211, the second sensing resistor 212, the third sensing resistor 213, and the fourth sensing resistor 214 are disposed on the same layer as the gate metal layer 150, a film layer between the sensing resistor far from the second surface 112 and the second surface 112 includes the buffer layer 120 and the substrate 110, and a depth of the groove 300 is smaller than a sum of thicknesses of the buffer layer 120 and the substrate 110.
Fig. 7 is a schematic view of another cross-sectional structure along the dashed line AB in fig. 1. As shown in fig. 7, a buffer layer 120, a gate metal layer 150, a gate insulating layer 140, an active layer 130, a first insulating layer 160, and a source-drain metal layer 170 are sequentially stacked on the substrate 110. Optionally, the first sensing resistor 211, the second sensing resistor 212, the third sensing resistor 213, and the fourth sensing resistor 214 are disposed on the same layer as the active layer 130, a film layer between the sensing resistor far from the second surface 112 and the second surface 112 includes the gate insulating layer 140, the buffer layer 120, and the substrate 110, and a depth of the groove 300 is smaller than a sum of thicknesses of the gate insulating layer 140, the buffer layer 120, and the substrate 110.
Fig. 8 is a schematic view of another cross-sectional structure along the dashed line AB in fig. 1. As shown in fig. 8, a buffer layer 120, a gate metal layer 150, a gate insulating layer 140, an active layer 130, a first insulating layer 160, and a source-drain metal layer 170 are sequentially stacked on the substrate 110. Optionally, the first sensing resistor 211, the second sensing resistor 212, the third sensing resistor 213, and the fourth sensing resistor 214 are disposed on the same layer as the source-drain metal layer 170, a film layer between the sensing resistor far from the second surface 112 and the second surface 112 includes the first insulating layer 160, the gate insulating layer 140, the buffer layer 120, and the substrate 110, and a depth of the groove 300 is smaller than a sum of thicknesses of the first insulating layer 160, the gate insulating layer 140, the buffer layer 120, and the substrate 110.
Fig. 9 is a schematic view of another cross-sectional structure along the dashed line AB in fig. 1. As shown in fig. 9, a buffer layer 120, a gate metal layer 150, a gate insulating layer 140, an active layer 130, a first insulating layer 160, and a source-drain metal layer 170 are sequentially stacked on the substrate 110. Optionally, the display panel further includes a second insulating layer 180 located on a side of the source-drain metal layer 170 away from the substrate 110, and a touch routing layer 190 located on a side of the second insulating layer 180 away from the substrate 110, the first sensing resistor 211, the second sensing resistor 212, the third sensing resistor 213, and the fourth sensing resistor 214 are disposed on the same layer as the touch routing layer 190, a film layer between the sensing resistor away from the second surface 112 and the second surface 112 includes the second insulating layer 180, the first insulating layer 160, the gate insulating layer 140, the buffer layer 120, and the substrate 110, and a depth of the groove 300 is smaller than a sum of thicknesses of the second insulating layer 180, the first insulating layer 160, the gate insulating layer 140, the buffer layer 120, and the substrate 110.
In the above description of fig. 2 to 9, the term "disposed in the same layer" means that the first sensing resistor 211, the second sensing resistor 212, the third sensing resistor 213, the fourth sensing resistor 214 and the corresponding film layer belong to the same functional film layer, and may be formed by using the same material in the same process step, not limiting the position of each structure.
It should be further noted that, as shown in fig. 1, the display panel includes a plurality of thin film transistors 400, the thin film transistor 400 in fig. 2 to 5 is a top gate thin film transistor, and the thin film transistor 400 in fig. 6 to 9 is a bottom gate thin film transistor, and due to the different structures of the thin film transistors 400, the relative position relationship between the gate metal layer 150, the gate insulating layer 140, the active layer 130, and the first insulating layer 160 in fig. 2 to 5 and the source drain metal layer 170 is different from that in fig. 6 to 9. In other embodiments of the present invention, the first insulating layer 160 may not be disposed between the source-drain metal layer 170 and the active layer 130 in the bottom-gate thin film transistor, as shown in fig. 10. At this time, when the first sensing resistor 211, the second sensing resistor 212, the third sensing resistor 213 and the fourth sensing resistor 214 are disposed on the same layer as the source-drain metal layer 170, the film layer between the third surface 113 and the second surface 112 includes the gate insulating layer 140, the buffer layer 120 and the substrate 110, and the depth of the recess 300 disposed on the third surface 113 should be smaller than the sum of the thicknesses of the gate insulating layer 140, the buffer layer 120 and the substrate 110.
Optionally, as an unnecessary film layer for assisting in improving the performance of the display panel, the buffer layer 120 in fig. 2 to 9 may also be omitted.
It should be further noted that, in the structures shown in fig. 2 to 9, the first sensing resistor 211, the second sensing resistor 212, the third sensing resistor 213, and the fourth sensing resistor 214 are all disposed on the same layer as a certain inherent functional film layer of the display panel, such a configuration does not need to reserve a film layer space for the four sensing resistors, which is beneficial to thinning the display panel, and on the other hand, the four sensing resistors and the functional film layer can be formed by using the same material in the same process step, which can achieve the beneficial effect of simplifying the process steps.
In addition, fig. 2 to 9 each schematically illustrate the groove 300 dug from the third surface 113 to the inside of the substrate 110, and it is understood that, according to actual needs, in other embodiments of the present embodiment, the depth of the groove 300 may be smaller than that of the groove 300 shown in fig. 2 to 9. Compared with other cases, the arrangement of the groove 300 shown in fig. 2 to 9 can make the depth of the groove 300 larger, and the distance between the sense resistor close to the second surface 112 and the sense resistor far from the second surface 112 is further longer, so as to increase the strain difference of the pressure sensing bridge 200 and improve the sensitivity of the pressure sensing bridge 200.
Fig. 11 is a schematic structural diagram of a display device according to an embodiment of the present invention. As shown in fig. 11, the display device 20 includes the display panel 10 according to any embodiment of the present invention.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments illustrated herein, but is capable of various obvious modifications, rearrangements, combinations and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (15)
1. A display panel comprising a substrate, characterized in that:
the substrate comprises a first surface and a second surface which are opposite, and at least one pressure sensing bridge is arranged on one side of the first surface;
the pressure sensing bridge comprises a first power signal input end, a second power signal input end, a first sensing signal detection end and a second sensing signal detection end, and further comprises a first sensing resistor, a second sensing resistor, a third sensing resistor and a fourth sensing resistor;
a first end of the first sensing resistor and a first end of the fourth sensing resistor are electrically connected with the first power signal input end, a second end of the first sensing resistor and a first end of the second sensing resistor are electrically connected with the first sensing signal detection end, a second end of the fourth sensing resistor and a first end of the third sensing resistor are electrically connected with the second sensing signal detection end, and a second end of the second sensing resistor and a second end of the third sensing resistor are electrically connected with the second power signal input end;
the first power signal input end and the second power signal input end are used for inputting bias voltage signals to the pressure sensing bridge; the first sensing signal detection end and the second sensing signal detection end are used for outputting a pressure sensing detection signal from the pressure sensing bridge;
the first sensing resistor, the second sensing resistor, the third sensing resistor and the fourth sensing resistor are made of the same material;
the distances from at least one induction resistor to the second surface are unequal to the distances from the rest induction resistors to the second surface; the sensing resistor far away from the second surface and the film layer between the second surface form an integral structure, the integral structure is provided with a third surface opposite to the second surface, the third surface is provided with a groove, and the sensing resistor close to the second surface is arranged in the groove.
2. The display panel according to claim 1, wherein when the distances between the two sensing resistors and the rest of the sensing resistors are not equal to each other, the sensing resistors far away from the second surface are a first sensing resistor and a third sensing resistor, and the sensing resistors close to the second surface are a second sensing resistor and a fourth sensing resistor; or,
the sensing resistors far away from the second surface are a second sensing resistor and a fourth sensing resistor, and the sensing resistors close to the second surface are a first sensing resistor and a third sensing resistor.
3. The display panel according to claim 1, wherein the substrate is provided with a buffer layer, an active layer, a gate insulating layer, a gate metal layer, a first insulating layer, and a source drain metal layer, which are sequentially stacked.
4. The display panel according to claim 3, wherein the first, second, third, and fourth sense resistors are disposed in the same layer as the gate metal layer;
the film layer between the induction resistor far away from the second surface and the second surface comprises the grid insulation layer, the buffer layer and the substrate, and the depth of the groove is smaller than the sum of the thicknesses of the grid insulation layer, the buffer layer and the substrate;
the same layer arrangement means that the first induction resistor, the second induction resistor, the third induction resistor, the fourth induction resistor and the grid metal layer belong to the same functional film layer and are formed by the same material in the same process step.
5. The display panel according to claim 3, wherein the first, second, third, and fourth sense resistors are disposed in the same layer as the active layer;
the film layer between the induction resistor far away from the second surface and the second surface comprises the buffer layer and the substrate, and the depth of the groove is smaller than the sum of the thicknesses of the buffer layer and the substrate;
the same layer arrangement means that the first sensing resistor, the second sensing resistor, the third sensing resistor, the fourth sensing resistor and the active layer belong to the same functional film layer and are formed by the same material in the same process step.
6. The display panel according to claim 1, wherein a buffer layer, a gate metal layer, a gate insulating layer, an active layer, a first insulating layer, and a source drain metal layer are sequentially stacked on the substrate.
7. The display panel according to claim 6, wherein the first, second, third, and fourth sense resistors are disposed in the same layer as the gate metal layer;
the film layer between the induction resistor far away from the second surface and the second surface comprises the buffer layer and the substrate, and the depth of the groove is smaller than the sum of the thicknesses of the buffer layer and the substrate;
the same layer arrangement means that the first induction resistor, the second induction resistor, the third induction resistor, the fourth induction resistor and the grid metal layer belong to the same functional film layer and are formed by the same material in the same process step.
8. The display panel according to claim 6, wherein the first, second, third, and fourth sense resistors are disposed in the same layer as the active layer;
the film layer between the induction resistor far away from the second surface and the second surface comprises the grid insulation layer, the buffer layer and the substrate, and the depth of the groove is smaller than the sum of the thicknesses of the grid insulation layer, the buffer layer and the substrate;
the same layer arrangement means that the first sensing resistor, the second sensing resistor, the third sensing resistor, the fourth sensing resistor and the active layer belong to the same functional film layer and are formed by the same material in the same process step.
9. The display panel according to claim 3 or 6, wherein the first, second, third, and fourth sense resistors are disposed in the same layer as the source-drain metal layer;
the film layer between the induction resistor far away from the second surface and the second surface comprises the first insulating layer, the gate insulating layer, the buffer layer and the substrate, and the depth of the groove is smaller than the sum of the thicknesses of the first insulating layer, the gate insulating layer, the buffer layer and the substrate;
the same layer arrangement means that the first induction resistor, the second induction resistor, the third induction resistor, the fourth induction resistor and the source drain metal layer belong to the same functional film layer, and are formed by the same material in the same process step.
10. The display panel according to claim 3 or 6, further comprising a second insulating layer located on a side of the source-drain metal layer away from the substrate and a touch routing layer located on a side of the second insulating layer away from the substrate, wherein the first, second, third and fourth sensing resistors are disposed on the same layer as the touch routing layer;
the film layer between the induction resistor far away from the second surface and the second surface comprises the second insulating layer, the first insulating layer, the gate insulating layer, the buffer layer and the substrate, and the depth of the groove is smaller than the sum of the thicknesses of the second insulating layer, the first insulating layer, the gate insulating layer, the buffer layer and the substrate;
the same layer arrangement means that the first sensing resistor, the second sensing resistor, the third sensing resistor, the fourth sensing resistor and the touch wiring layer belong to the same functional film layer and are formed by the same material in the same process step.
11. The display panel according to claim 1, wherein the thickness of the sense resistor located in the groove is smaller than the depth of the groove.
12. The display panel according to claim 1, wherein a distance between the bottom of the groove and the second surface is smaller than a thickness of the substrate.
13. The display panel of claim 1, wherein the substrate comprises a display area and a non-display area disposed around the display area, and wherein the at least one pressure sensing bridge is disposed in the non-display area.
14. The display panel according to claim 1, wherein a component of an extension length of the first sense resistor from the first end to the second end in the first extending direction is larger than a component in the second extending direction, a component of an extension length of the second sense resistor from the first end to the second end in the second extending direction is larger than a component in the first extending direction, a component of an extension length of the third sense resistor from the first end to the second end in the first extending direction is larger than a component in the second extending direction, and a component of an extension length of the fourth sense resistor from the first end to the second end in the second extending direction is larger than a component in the first extending direction; the first extending direction and the second extending direction are parallel to the plane of the substrate and cross each other.
15. A display device characterized by comprising the display panel according to any one of claims 1 to 14.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710740164.1A CN107577366B (en) | 2017-08-25 | 2017-08-25 | Display panel and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710740164.1A CN107577366B (en) | 2017-08-25 | 2017-08-25 | Display panel and display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107577366A CN107577366A (en) | 2018-01-12 |
| CN107577366B true CN107577366B (en) | 2020-04-28 |
Family
ID=61034745
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710740164.1A Active CN107577366B (en) | 2017-08-25 | 2017-08-25 | Display panel and display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107577366B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111142696B (en) * | 2018-11-05 | 2023-04-28 | 上海和辉光电股份有限公司 | Bendable touch screen |
| CN109920330B (en) | 2019-02-22 | 2021-03-05 | 合肥鑫晟光电科技有限公司 | Substrate and display device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105867699A (en) * | 2016-06-20 | 2016-08-17 | 上海天马微电子有限公司 | Display panel and touch pressure detection method |
| CN105955535A (en) * | 2016-05-13 | 2016-09-21 | 上海天马微电子有限公司 | Display panel |
| CN105975137A (en) * | 2016-07-07 | 2016-09-28 | 上海天马微电子有限公司 | Touch display panel and touch display device |
| CN106201063A (en) * | 2016-06-27 | 2016-12-07 | 华为技术有限公司 | A kind of touch pressure detection device, display screen and touch-controlled electronic devices |
| CN106354328A (en) * | 2016-09-14 | 2017-01-25 | 宸鸿科技(厦门)有限公司 | Pressure sensing module and pressure touch sensing system |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2634552B1 (en) * | 2012-02-28 | 2015-04-08 | Sony Mobile Communications AB | Electronic device and method for determining a temperature of an electronic device |
-
2017
- 2017-08-25 CN CN201710740164.1A patent/CN107577366B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105955535A (en) * | 2016-05-13 | 2016-09-21 | 上海天马微电子有限公司 | Display panel |
| CN105867699A (en) * | 2016-06-20 | 2016-08-17 | 上海天马微电子有限公司 | Display panel and touch pressure detection method |
| CN106201063A (en) * | 2016-06-27 | 2016-12-07 | 华为技术有限公司 | A kind of touch pressure detection device, display screen and touch-controlled electronic devices |
| CN105975137A (en) * | 2016-07-07 | 2016-09-28 | 上海天马微电子有限公司 | Touch display panel and touch display device |
| CN106354328A (en) * | 2016-09-14 | 2017-01-25 | 宸鸿科技(厦门)有限公司 | Pressure sensing module and pressure touch sensing system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107577366A (en) | 2018-01-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8835191B2 (en) | Nanowire stress sensors and stress sensor integrated circuits, design structures for a stress sensor integrated circuit, and related methods | |
| US10031615B2 (en) | Touch substrate, touch display panel and method for calculating touch pressure | |
| US6647782B2 (en) | Capacitive humidity sensor | |
| CN100410621C (en) | Electrostatic capacitance detection device | |
| US10860159B2 (en) | Display substrate, display panel and display device | |
| US10528173B2 (en) | Array substrate, display panel, display device and method for manufacturing array substrate | |
| JP2008215974A (en) | Field effect transistor type ion sensor | |
| US10297695B2 (en) | Thin film transistor and method for detecting pressure by utilizing the same and touch apparatus | |
| CN100498206C (en) | Electrosatatic capacity detector | |
| CN107316838B (en) | Array substrate, manufacturing method, touch display panel and touch display device | |
| WO2012080811A1 (en) | Semiconductor pressure sensor | |
| CN107315506B (en) | A display substrate, display panel and display device | |
| US10558286B2 (en) | Array substrate, touch display panel, and touch display device thereof | |
| JP2011158317A (en) | Pressure sensor | |
| CN107577366B (en) | Display panel and display device | |
| US20190025637A1 (en) | Display substrate and manufacturing method thereof, display panel and display device | |
| CN107449538B (en) | Semiconductor pressure sensor | |
| CN107275346A (en) | Display panel and display device | |
| US20100065933A1 (en) | Semiconductor strain gauge and the manufacturing method | |
| KR101593179B1 (en) | Field effective transistor typed pressure sensor and method of manufacturing the same | |
| JPH1114482A (en) | Capacitive pressure sensor and method of manufacturing the same | |
| CN107422923B (en) | Display panel and display device | |
| CN101005097A (en) | Semiconductor piezoresistive sensor and method of operation thereof | |
| WO2018131234A1 (en) | Piezoresistive element, mechanical quantity detection sensor and microphone | |
| JP6241285B2 (en) | Matrix type load sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |