CN107527864B - A kind of memory device, tungsten forming core layer and preparation method thereof - Google Patents
A kind of memory device, tungsten forming core layer and preparation method thereof Download PDFInfo
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- CN107527864B CN107527864B CN201710770824.0A CN201710770824A CN107527864B CN 107527864 B CN107527864 B CN 107527864B CN 201710770824 A CN201710770824 A CN 201710770824A CN 107527864 B CN107527864 B CN 107527864B
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- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 213
- 239000010937 tungsten Substances 0.000 title claims abstract description 213
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims abstract description 210
- 239000012792 core layer Substances 0.000 title claims abstract description 154
- 238000002360 preparation method Methods 0.000 title claims abstract description 84
- 239000000126 substance Substances 0.000 claims abstract description 135
- 239000010410 layer Substances 0.000 claims abstract description 95
- 238000000034 method Methods 0.000 claims abstract description 32
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 16
- 238000005229 chemical vapour deposition Methods 0.000 claims description 15
- 229910000077 silane Inorganic materials 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 12
- 239000013067 intermediate product Substances 0.000 claims description 12
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 238000007740 vapor deposition Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 239000000047 product Substances 0.000 claims description 5
- 238000010926 purge Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 23
- 230000006911 nucleation Effects 0.000 description 10
- 238000010899 nucleation Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 239000012071 phase Substances 0.000 description 4
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 3
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- -1 tungsten nitride Chemical class 0.000 description 2
- QGHDLJAZIIFENW-UHFFFAOYSA-N 4-[1,1,1,3,3,3-hexafluoro-2-(4-hydroxy-3-prop-2-enylphenyl)propan-2-yl]-2-prop-2-enylphenol Chemical group C1=C(CC=C)C(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C(CC=C)=C1 QGHDLJAZIIFENW-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 150000003657 tungsten Chemical class 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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Abstract
This application discloses a kind of memory devices, tungsten forming core layer and preparation method thereof, wherein, the preparation method of the tungsten forming core layer includes: the thicknesses of layers curve for obtaining the chemical vapor depsotition equipment, the corresponding relationship of record is prepared after having the chemical vapor depsotition equipment cavity to initialize in the thicknesses of layers curve film number and tungsten forming core thickness degree；The chemical vapor depsotition equipment after cavity initialization is pre-processed according to the thicknesses of layers curve, so that the chemical vapor depsotition equipment is in the stable work area of the thicknesses of layers curve；Tungsten forming core layer is prepared using pretreated chemical vapor depsotition equipment.Tungsten forming core layer is prepared using this method, the uniform purpose of the tungsten forming core thickness degree of preparation may be implemented, simplify the selection of the preparation technology parameter of subsequent tungsten body layer, it ensure that the quality of the tungsten body layer prepared on tungsten forming core layer, to improve the electric property of the memory device based on above-mentioned tungsten forming core layer and the preparation of tungsten body layer.
Description
Technical field
This application involves technical field of semiconductors, more specifically to a kind of memory device, tungsten forming core layer and its preparation
Method.
Background technique
In dynamic random access memory (Dynamic Random Access Memory, DRAM) and three dimensional NAND flash memory
In the preparation processes of memory devices such as (3D NAND flash) device, tungsten/tungsten nitride material is widely used in after copper wiring
Interconnection architecture in.
Due in the preparation process of above-mentioned memory device, due to the presence of the barrier layer, so that tungsten forming core layer (W
Nucleation growth) can only be using based on silane (SiH4) pulse nucleation mode (Pulse Nucleation Layer,
PNL) technique.In the process, it is usually handed over by chemical vapor deposition (Chemical Vapor Deposition, CVD) board
For the mode that silane and tungsten hexafluoride react on a preset condition based is passed through, one layer of tungsten forming core layer is formed on wafer, later
Tungsten body layer is prepared based on tungsten forming core layer.
But find in the actual production process, when preparing tungsten forming core layer using pulse nucleation mode, the thickness of tungsten forming core layer
Degree can change as chemical vapor depsotition equipment prepares number, so as to cause the thickness for the tungsten forming core layer being formed on wafer
Difference is larger, and the selection for the preparation technology parameter of subsequent tungsten body layer increases difficulty, easily occurs being formed in tungsten forming core layer
On tungsten body layer inside there is cavity, or even can not occur in the case where deposits tungsten body layer on tungsten forming core layer.
Summary of the invention
In order to solve the above technical problems, the present invention provides a kind of memory devices, tungsten forming core layer and preparation method thereof, with reality
The purpose of the uniform tungsten forming core layer of thickness is now prepared based on pulse nucleation technique.
To realize the above-mentioned technical purpose, the embodiment of the invention provides following technical solutions:
A kind of preparation method of tungsten forming core layer is applied to chemical vapor depsotition equipment；The preparation method of the tungsten forming core layer
Include:
The thicknesses of layers curve of the chemical vapor depsotition equipment is obtained, record has describedization in the thicknesses of layers curve
Learn the corresponding relationship of the film number and tungsten forming core thickness degree that prepare after the initialization of vapor deposition apparatus cavity；
The chemical vapor depsotition equipment after cavity initialization is pre-processed according to the thicknesses of layers curve, so that institute
State the stable work area that chemical vapor depsotition equipment is in the thicknesses of layers curve；
Tungsten forming core layer is prepared using pretreated chemical vapor depsotition equipment.
Optionally, the thicknesses of layers curve for obtaining the chemical vapor depsotition equipment includes:
Chemical vapor depsotition equipment after being initialized using cavity carries out the preparation of multiple tungsten forming core layer, and records system every time
The thickness of standby tungsten forming core layer and the corresponding relationship for preparing number；
The thicknesses of layers curve is drawn with the corresponding relationship for preparing number using the thickness of the tungsten forming core layer prepared every time.
Optionally, described that the chemical vapor depsotition equipment after cavity initialization is carried out in advance according to the thicknesses of layers curve
Processing, so that the stable work area that the chemical vapor depsotition equipment is in the thicknesses of layers curve includes:
According to the unstable work section length of the thicknesses of layers curve, preset times are determined；
Chemical vapor depsotition equipment after being initialized using cavity carries out the tungsten forming core layer preparation of preset times, so that described
Chemical vapor depsotition equipment is in the stable work area of the thicknesses of layers curve.
Optionally, it is described initialized using cavity after chemical vapor depsotition equipment carry out preset times tungsten forming core layer system
It is standby to include:
Chemical vapor depsotition equipment after being initialized using cavity prepares tungsten in the warming-up crystal column surface of preset quantity respectively
Forming core layer, the preset quantity are equal to the preset times；
Or
Chemical vapor depsotition equipment after being initialized using cavity repeats the preparation of tungsten forming core layer under the conditions of no wafer
Technique preset times.
Optionally, it is described prepare tungsten forming core layer using pretreated chemical vapor depsotition equipment after further include:
It is described when the W film overall thickness of pretreated chemical vapor depsotition equipment preparation is greater than or equal to preset value
Chemical vapor depsotition equipment carry out cavity initialization process, and Returning utilization cavity initialization after chemical vapor depsotition equipment into
Prepared by the tungsten forming core layer of row preset times, so that the chemical vapor depsotition equipment is in the stabilization work of the thicknesses of layers curve
The step of making area.
Optionally, described to include: to chemical vapor depsotition equipment progress cavity initialization process
The cavity of the chemical vapor depsotition equipment is cleaned using chemical reaction process or gas purging process, with
Remove the cavity inner wall of the chemical vapor depsotition equipment and the tungsten forming core layer intermediate product of gas output device surface attachment.
Optionally, described to prepare tungsten forming core layer using pretreated chemical vapor depsotition equipment and include:
It alternately is passed through silane and tungsten hexafluoride by the gas device of the chemical vapor depsotition equipment, in crystal column surface
Form the tungsten forming core layer.
A kind of tungsten forming core layer is prepared by the preparation method of tungsten forming core layer described in any of the above embodiments.
A kind of memory device, including the tungsten forming core layer as described in above-mentioned one.
It can be seen from the above technical proposal that the embodiment of the invention provides a kind of memory device, tungsten forming core layer and its systems
Preparation Method, wherein the preparation method of the tungsten forming core layer is before preparing tungsten forming core layer using chemical vapor depsotition equipment, first
Obtain the thicknesses of layers curve of the chemical vapor depsotition equipment, for chemical vapor depsotition equipment carry out pretreatment provide according to
According to the chemical vapor depsotition equipment after then being initialized according to the thicknesses of layers curve to cavity pre-processes, so that described
Chemical vapor depsotition equipment is in the stable work area of the thicknesses of layers curve, finally utilizes pretreated chemical vapor deposition
Product equipment prepares tungsten forming core layer.Inventor is the study found that have one in the thicknesses of layers curve of each chemical vapor depsotition equipment
The longer stable work area of section, in the stable work area, the tungsten forming core thickness degree of chemical vapor depsotition equipment preparation no longer with
The number for preparing of tungsten forming core layer vary widely, that is to say, that in the stable work area, chemical vapor depsotition equipment system
Standby tungsten forming core thickness degree tends towards stability.Therefore when preparing tungsten forming core layer using pretreated chemical vapor depsotition equipment,
The uniform purpose of the tungsten forming core thickness degree of preparation may be implemented, simplify the selection of the preparation technology parameter of subsequent tungsten body layer,
Ensure that the quality of the tungsten body layer prepared on tungsten forming core layer, thus improve based on above-mentioned tungsten forming core layer and tungsten body layer preparation
The electric property of memory device.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 and Fig. 2 is to use the pulse nucleation mode system based on silane using chemical vapor deposition equipment in the prior art
The structural schematic diagram of standby tungsten forming core layer；
Fig. 3 is a kind of flow diagram of the preparation method for tungsten forming core layer that one embodiment of the application provides；
Fig. 4 is a kind of signal of the thicknesses of layers curve for chemical vapor depsotition equipment that one embodiment of the application provides
Figure；
Fig. 5 is a kind of flow diagram of the preparation method for tungsten forming core layer that another embodiment of the application provides；
Fig. 6 is a kind of flow diagram of the preparation method for tungsten forming core layer that another embodiment of the application provides；
Fig. 7 is a kind of flow diagram of the preparation method for tungsten forming core layer that the further embodiment of the application provides；
Fig. 8 is a kind of flow diagram of the preparation method for tungsten forming core layer that the preferred embodiment of the application provides；
Fig. 9 is a kind of process signal of the preparation method for tungsten forming core layer that another preferred embodiment of the application provides
Figure.
Specific embodiment
As described in background, the mistake of tungsten forming core layer is prepared using the pulse nucleation mode based on silane in the prior art
The thickness of Cheng Zhong, tungsten forming core layer can change as chemical vapor depsotition equipment prepares number, so as to cause wafer is formed in
On tungsten forming core layer thickness difference it is larger, increase difficulty for the selection of preparation technology parameter of subsequent tungsten body layer, easily
Occur occurring cavity inside the tungsten body layer being formed on tungsten forming core layer, or even can not be the deposits tungsten body layer on tungsten forming core layer the case where
Occur.
More specifically, with reference to Fig. 1 and Fig. 2, in fig. 1 and 2, label 10 indicates that wafer, label 20 indicate tungsten forming core
Layer, label 30 indicate that tungsten nitride barrier, label 40 indicate oxide structure；Inventor is the study found that utilize chemical vapor deposition
When product equipment is carried out continuously the preparation of tungsten forming core layer, negative offset can occur for the thickness of tungsten forming core layer；That is, utilizing chemical gas
When phase depositing device carries out the preparation of tungsten forming core layer, the thickness of tungsten forming core layer can tungsten forming core thickness degree as shown in Figure 1 to Fig. 2 institute
The tungsten forming core layer thickness variation shown；Assuming that in subsequent tungsten body layer preparation process, by preparation parameter with tungsten forming core shown in FIG. 1
Be configured based on thickness degree, then when using based on silane pulse nucleation mode preparation tungsten forming core layer thickness with
When tungsten forming core thickness degree shown in FIG. 1 differs smaller, tungsten body layer can be preferably formed；But with chemical vapor depsotition equipment
The increase for preparing number of tungsten forming core layer is carried out, the thickness of the tungsten forming core layer formed can be gradually to tungsten forming core layer shown in Fig. 2
Thickness is close, finally stablizes near tungsten forming core thickness degree shown in Fig. 2, this will lead to tungsten forming core layer shown in Fig. 2
Based on carry out tungsten body layer interior void just easily occur when the preparation of tungsten body layer, or even be difficult on the tungsten forming core layer of the thickness
Tungsten body layer is formed, to cause adverse effect to the electric property of finally formed memory device.
Likewise, assuming in subsequent tungsten body layer preparation process, by preparation parameter with tungsten forming core thickness degree shown in Fig. 2
Based on be configured, then when using based on silane pulse nucleation mode preparation tungsten forming core layer thickness and Fig. 1 institute
When the tungsten forming core thickness degree difference shown is smaller, just easily lead to occur cavity inside subsequent tungsten body layer, or even be difficult in the thickness
Tungsten body layer is formed on the tungsten forming core layer of degree.
In view of this, the embodiment of the present application provides a kind of preparation method of tungsten forming core layer, it is applied to chemical vapor deposition
Equipment；The preparation method of the tungsten forming core layer includes:
The thicknesses of layers curve of the chemical vapor depsotition equipment is obtained, record has describedization in the thicknesses of layers curve
Learn the corresponding relationship of the film number and tungsten forming core thickness degree that prepare after the initialization of vapor deposition apparatus cavity；
The chemical vapor depsotition equipment after cavity initialization is pre-processed according to the thicknesses of layers curve, so that institute
State the stable work area that chemical vapor depsotition equipment is in the thicknesses of layers curve；
Tungsten forming core layer is prepared using pretreated chemical vapor depsotition equipment.
It can be seen from the above technical proposal that the preparation method of the tungsten forming core layer is in the chemical vapor depsotition equipment system of utilization
Before standby tungsten forming core layer, the thicknesses of layers curve of the chemical vapor depsotition equipment is obtained, first to set to chemical vapor deposition
It is standby to carry out pretreatment foundation is provided, then according to the thicknesses of layers curve to the chemical vapor depsotition equipment after cavity initialization into
Row pretreatment, so that the chemical vapor depsotition equipment is in the stable work area of the thicknesses of layers curve, finally using pre-
Treated, and chemical vapor depsotition equipment prepares tungsten forming core layer.Inventor the study found that each chemical vapor depsotition equipment film
There is one section of longer stable work area in layer thickness curve, in the stable work area, chemical vapor depsotition equipment preparation
Tungsten forming core thickness degree is no longer as the number for preparing of tungsten forming core layer varies widely, that is to say, that in the stable work area,
The tungsten forming core thickness degree of chemical vapor depsotition equipment preparation tends towards stability.Therefore it is set using pretreated chemical vapor deposition
When preparing standby tungsten forming core layer, the uniform purpose of the tungsten forming core thickness degree of preparation may be implemented, simplify the system of subsequent tungsten body layer
The selection of standby technological parameter, ensure that the quality of the tungsten body layer prepared on tungsten forming core layer, to improve based on above-mentioned tungsten shape
The electric property of stratum nucleare and the memory device of tungsten body layer preparation.
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The embodiment of the present application provides a kind of preparation method of tungsten forming core layer, as shown in figure 3, being applied to chemical vapor deposition
Equipment；The preparation method of the tungsten forming core layer includes:
S101: the thicknesses of layers curve of the chemical vapor depsotition equipment is obtained, recording in the thicknesses of layers curve has
The corresponding relationship of the film number and tungsten forming core thickness degree that are prepared after the chemical vapor depsotition equipment cavity initialization；
S102: pre-processing the chemical vapor depsotition equipment after cavity initialization according to the thicknesses of layers curve,
So that the chemical vapor depsotition equipment is in the stable work area of the thicknesses of layers curve；
S103: tungsten forming core layer is prepared using pretreated chemical vapor depsotition equipment.
For the thicknesses of layers curve of the chemical vapor depsotition equipment as shown in figure 4, in Fig. 4, abscissa is to utilize chemistry
Vapor deposition apparatus prepares the number (or wafer number) of tungsten forming core layer；For curve L1, ordinate is thickness, for
For curve L2, ordinate is square resistance.
The process that inventor obtains the thicknesses of layers curve of the chemical vapor depsotition equipment is as shown in Figure 5, comprising:
S1011: the chemical vapor depsotition equipment after being initialized using cavity carries out the preparation of multiple tungsten forming core layer, and records
The thickness of the tungsten forming core layer prepared every time and the corresponding relationship for preparing number；
S1012: the film layer thickness is drawn with the corresponding relationship for preparing number using the thickness of the tungsten forming core layer prepared every time
It writes music line.
Specifically, inventor is by the chemical vapor depsotition equipment after being initialized using one to cavity continuously more
A crystal column surface prepares tungsten forming core layer, records the sequencing of the tungsten forming core layer of each crystal column surface preparation, measures and records system
The thickness of the standby tungsten forming core layer in each crystal column surface, to obtain the thickness of the tungsten forming core layer prepared every time and prepare pair of number
It should be related to；
Then using obtained data, the number of tungsten forming core layer is prepared as horizontal axis using chemical vapor depsotition equipment, with cross
The corresponding tungsten forming core layer of axis carries out the preparation of thicknesses of layers curve with a thickness of longitudinal axis data；
The thicknesses of layers curve finally obtained is as shown in the L1 curve in Fig. 4.
And inventor studies the formation basic theory of the thicknesses of layers curve: in the pulse nucleation based on silane
During mode prepares tungsten forming core layer, as shown in fig. 6, described prepare tungsten shape using pretreated chemical vapor depsotition equipment
Stratum nucleare includes:
S1031: silane and tungsten hexafluoride are alternately passed through by the gas device of the chemical vapor depsotition equipment, in crystalline substance
Circular surfaces form the tungsten forming core layer.
Specifically, the gas device by the chemical vapor depsotition equipment is alternately passed through silane and tungsten hexafluoride, with
Forming the tungsten forming core layer detailed process in crystal column surface includes: the gas device first by the chemical vapor depsotition equipment
(showerhead) silane gas, the aluminum fluoride (AlF in silane and gas device are passed through3) generation tungsten is reacted on a preset condition based
Forming core layer intermediate product (SiH4+AlF3→SiH4-xFx)；It is then discharged out silane gas, is passed through tungsten hexafluoride (WF6) gas, part
Tungsten forming core layer intermediate product is brought to crystal column surface with being passed through for tungsten hexafluoride, this part tungsten forming core layer intermediate product and hexafluoro
Change tungsten reaction and generates tungsten forming core layer (SiH4-xFx+WF6→ W), in the tungsten forming core layer intermediate product of gas device surface attachment
During reaching saturation, tungsten forming core layer can be gradually thinning in the thickness of crystal column surface, and the thickness of tungsten forming core layer gradually increases, with
Curve L1 and L2 shown in Fig. 4 is consistent.
It, at this time can be at the beginning of by carrying out cavity to chemical vapor depsotition equipment when above-mentioned reaction process reaches saturation state
Beginningization processing, to remove the tungsten forming core layer intermediate product on the gas device surface of chemical vapor depsotition equipment, so that aluminum fluoride
(AlF3) be exposed again.
It can be seen that from the curve L1 in Fig. 4 as chemical vapor depsotition equipment prepares the continuous of the number of tungsten forming core layer
Increase, the thickness of tungsten forming core layer gradually tends towards stability, and the region that this tungsten forming core thickness degree tends towards stability is called film layer by we
The stable work area of thickness curve；When chemical vapor depsotition equipment works in the stable work area, the tungsten forming core layer of preparation
Thickness reach unanimity substantially.Therefore, we can be according to the thicknesses of layers curve to the chemical gaseous phase after cavity initialization
Depositing device is pre-processed, to be at the stable work area, so as to be prepared using the chemical vapor depsotition equipment
The uniform tungsten forming core layer of thickness.
Specifically, described that the chemical vapor deposition after cavity initialization is set according to the thicknesses of layers curve with reference to Fig. 7
It is standby to be pre-processed, so that the stable work area that the chemical vapor depsotition equipment is in the thicknesses of layers curve includes:
S1021: according to the unstable work section length of the thicknesses of layers curve, preset times are determined；
S1022: the chemical vapor depsotition equipment after being initialized using cavity carries out the tungsten forming core layer preparation of preset times, with
The chemical vapor depsotition equipment is set to be in the stable work area of the thicknesses of layers curve.
As can be seen that the unstable workspace of the thicknesses of layers curve refers to positioned at the front end curve L1 from the L1 of Fig. 4
Region, the segment length is between 25-35；Therefore, the value range of the preset times can be with for 25-35, including endpoint
Value, such as may is that 25,27,30,32,35 etc..The application to this and without limitation, specifically depending on actual conditions.
In the specific embodiment of the application, with reference to Fig. 8, it is described initialized using cavity after chemical vapor deposition
Prepared by the tungsten forming core layer that equipment carries out preset times includes:
S10221: the chemical vapor depsotition equipment after being initialized using cavity, in the warming-up crystal column surface point of preset quantity
Tungsten forming core layer is not prepared, and the preset quantity is equal to the preset times；
Or
Chemical vapor depsotition equipment after being initialized using cavity repeats the preparation of tungsten forming core layer under the conditions of no wafer
Technique preset times.
It is carried out it should be noted that present embodiments providing two kinds using the chemical vapor depsotition equipment after cavity initialization
The method of the tungsten forming core layer preparation of preset times:
It can be and prepared using the tungsten forming core layer that the warming-up wafer of preset quantity carries out preset times, so that the chemistry gas
Phase depositing device is both formed in the warming-up crystal column surface of preset quantity in tungsten forming core layer prepared by unstable workspace, to make institute
It states chemical vapor depsotition equipment and works in stable work area.
It is also possible to through the number of repetition for the first wafer condition that chemical vapor depsotition equipment is arranged be pre-
If number, so that chemical vapor depsotition equipment repeats tungsten forming core layer preparation process preset times under the conditions of no wafer, from
And the chemical vapor depsotition equipment is made to work in stable work area.
The application prepares the tungsten forming core layer for carrying out preset times using the chemical vapor depsotition equipment after cavity initialization
Concrete mode and without limitation, specifically depending on actual conditions.
On the basis of the above embodiments, in the preferred embodiment of the application, as shown in figure 9, described using pre-
After treated tungsten forming core layer prepared by chemical vapor depsotition equipment further include:
S104: when the W film overall thickness of pretreated chemical vapor depsotition equipment preparation is greater than or equal to preset value
When, the chemical vapor depsotition equipment carries out cavity initialization process, and the chemical vapor deposition after the initialization of Returning utilization cavity
Product equipment carries out the tungsten forming core layer preparation of preset times, so that the chemical vapor depsotition equipment is in the thicknesses of layers curve
Stable work area the step of.
It should be noted that when the W film overall thickness of pretreated chemical vapor depsotition equipment preparation is greater than or equal to
When preset value, that is, equipment the attachment of chamber vivo devices surface W film thickness when reaching certain value, be attached to these ground
The certain thickness W film of side can be by parameters such as the heat dissipation of influence chemical vapor depsotition equipment and reaction rates, to influence
The working performance of chemical vapor depsotition equipment.Therefore in the W film total thickness when the preparation of pretreated chemical vapor depsotition equipment
When degree is greater than or equal to preset value, the chemical vapor depsotition equipment carries out cavity initialization process automatically, is attached to removal
The tungsten forming core layer intermediate product and W film on chamber vivo devices surface, guarantee the normal working performance of chemical vapor depsotition equipment.
The specific value of the preset value different, the application couple according to the parameter difference of chemical vapor depsotition equipment
Its specific value and without limitation, specifically depending on actual conditions.
It also should be noted that the W film overall thickness of pretreated chemical vapor depsotition equipment preparation is not only wrapped
The thickness for including the tungsten forming core layer of preparation further includes the thickness of the W films such as the tungsten body layer of subsequent preparation.
But after carrying out cavity initialization process to chemical vapor depsotition equipment, which again can work
Make in unstable workspace shown in the curve L1 of Fig. 4, it is therefore desirable to return initial to cavity according to the thicknesses of layers curve
Chemical vapor depsotition equipment after change carries out pretreated step, which is re-started pre-process so that
It works in stable work area.
On the basis of the above embodiments, another embodiment of the application provides one kind to the chemical vapor deposition
The detailed process of equipment progress cavity initialization process, comprising:
The cavity of the chemical vapor depsotition equipment is cleaned using chemical reaction process or gas purging process, with
Remove the cavity inner wall of the chemical vapor depsotition equipment and the tungsten forming core layer intermediate product of gas output device surface attachment.
Wherein, cavity is cleaned using chemical reaction process (dry clean), refer to can among tungsten forming core layer
The gas of product reaction pours in cavity, so that the gas and the tungsten forming core layer intermediate product being attached on inner wall and gas device
And W film is reacted, to achieve the purpose that remove these tungsten forming core layer intermediate products and W film；
Cavity is cleaned using gas purging process, refer to using inert gas to cavity inner wall and gas device into
Row purging, to realize the purpose for removing the tungsten forming core layer intermediate product being attached on inner wall and gas device.
Correspondingly, the tungsten forming core layer is by any of the above-described embodiment the embodiment of the present application also provides a kind of tungsten forming core layer
The preparation method of the tungsten forming core layer prepares.
Correspondingly, the embodiment of the present application also provides a kind of memory device, including the tungsten forming core as described in above-described embodiment
Layer.
Optionally, the memory device can be dynamic random access memory (Dynamic RandomAccess
Memory, DRAM), it can also be three dimensional NAND flash memory (3D NAND flash) device.
In conclusion the embodiment of the present application provides a kind of memory device, tungsten forming core layer and preparation method thereof, wherein institute
The preparation method of tungsten forming core layer is stated before preparing tungsten forming core layer using chemical vapor depsotition equipment, obtains the chemical gas first
The thicknesses of layers curve of phase depositing device provides foundation to carry out pretreatment to chemical vapor depsotition equipment, then according to the film
Layer thickness curve pre-processes the chemical vapor depsotition equipment after cavity initialization, so that the chemical vapor depsotition equipment
Stable work area in the thicknesses of layers curve, finally prepares tungsten forming core using pretreated chemical vapor depsotition equipment
Layer.Inventor is the study found that there is one section of longer steady operation in the thicknesses of layers curve of each chemical vapor depsotition equipment
Area, in the stable work area, the tungsten forming core thickness degree of chemical vapor depsotition equipment preparation is no longer with the preparation of tungsten forming core layer
Number varies widely, that is to say, that in the stable work area, the tungsten forming core thickness degree of chemical vapor depsotition equipment preparation
It tends towards stability.Therefore when preparing tungsten forming core layer using pretreated chemical vapor depsotition equipment, the tungsten of preparation may be implemented
The uniform purpose of forming core thickness degree simplifies the selection of the preparation technology parameter of subsequent tungsten body layer, ensure that in tungsten forming core layer
The quality of the tungsten body layer of upper preparation, to improve the electrical property of the memory device based on above-mentioned tungsten forming core layer and the preparation of tungsten body layer
Energy.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with other
The difference of embodiment, the same or similar parts in each embodiment may refer to each other.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (9)
1. a kind of preparation method of tungsten forming core layer, which is characterized in that be applied to chemical vapor depsotition equipment；The tungsten forming core layer
Preparation method includes:
The thicknesses of layers curve of the chemical vapor depsotition equipment is obtained, record has the chemical gas in the thicknesses of layers curve
The corresponding relationship of the film number and tungsten forming core thickness degree that are prepared after the initialization of phase depositing device cavity；
The chemical vapor depsotition equipment after cavity initialization is pre-processed according to the thicknesses of layers curve, so that describedization
Learn the stable work area that vapor deposition apparatus is in the thicknesses of layers curve；Chemical vapor deposition after the initialization to cavity
It includes: the tungsten forming core layer that the chemical vapor depsotition equipment after being initialized using cavity carries out preset times that product equipment, which carries out pretreatment,
Preparation；
Tungsten forming core layer is prepared using pretreated chemical vapor depsotition equipment.
2. the method according to claim 1, wherein the film layer for obtaining the chemical vapor depsotition equipment is thick
Line of writing music includes:
Chemical vapor depsotition equipment after being initialized using cavity carries out the preparation of multiple tungsten forming core layer, and records and to prepare every time
The thickness of tungsten forming core layer and the corresponding relationship for preparing number；
The thicknesses of layers curve is drawn with the corresponding relationship for preparing number using the thickness of the tungsten forming core layer prepared every time.
3. the method according to claim 1, wherein described initialize cavity according to the thicknesses of layers curve
Chemical vapor depsotition equipment afterwards is pre-processed, so that the chemical vapor depsotition equipment is in the thicknesses of layers curve
Stable work area includes:
According to the unstable work section length of the thicknesses of layers curve, preset times are determined；
Chemical vapor depsotition equipment after being initialized using cavity carries out the tungsten forming core layer preparation of preset times, so that the chemistry
Vapor deposition apparatus is in the stable work area of the thicknesses of layers curve.
4. according to the method described in claim 3, it is characterized in that, it is described initialized using cavity after chemical vapor deposition set
Prepared by the standby tungsten forming core layer for carrying out preset times includes:
Chemical vapor depsotition equipment after being initialized using cavity prepares tungsten forming core in the warming-up crystal column surface of preset quantity respectively
Layer, the preset quantity are equal to the preset times；
Or
Chemical vapor depsotition equipment after being initialized using cavity repeats tungsten forming core layer preparation process under the conditions of no wafer
Preset times.
5. according to the method described in claim 3, it is characterized in that, described utilize pretreated chemical vapor depsotition equipment system
After standby tungsten forming core layer further include:
When the W film overall thickness of pretreated chemical vapor depsotition equipment preparation is greater than or equal to preset value, the chemistry
Vapor deposition apparatus carries out cavity initialization process, and the chemical vapor depsotition equipment after the initialization of Returning utilization cavity carries out in advance
If prepared by the tungsten forming core layer of number, so that the chemical vapor depsotition equipment is in the stable work area of the thicknesses of layers curve
The step of.
6. according to the method described in claim 5, it is characterized in that, at the beginning of the progress cavity to the chemical vapor depsotition equipment
Beginningization is handled
The cavity of the chemical vapor depsotition equipment is cleaned using chemical reaction process or gas purging process, with removal
The tungsten forming core layer intermediate product of the cavity inner wall of the chemical vapor depsotition equipment and the attachment of gas output device surface.
7. the method according to claim 1, wherein described utilize pretreated chemical vapor depsotition equipment system
Include: for tungsten forming core layer
It alternately is passed through silane and tungsten hexafluoride by the gas device of the chemical vapor depsotition equipment, to be formed in crystal column surface
The tungsten forming core layer.
8. a kind of tungsten forming core layer, which is characterized in that prepared by the preparation method of the described in any item tungsten forming core layers of claim 1-7
It obtains.
9. a kind of memory device, which is characterized in that including tungsten forming core layer as claimed in claim 8.
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| CN113053809A (en) * | 2021-03-22 | 2021-06-29 | 长江存储科技有限责任公司 | Chemical vapor deposition method, three-dimensional memory, preparation method and memory system |
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| CN101572272A (en) * | 2008-04-30 | 2009-11-04 | 深超光电（深圳）有限公司 | Chemical vapor deposition manufacturing flow and pre-deposition layer structure of membrane transistor |
| CN102084462A (en) * | 2008-08-29 | 2011-06-01 | 诺发系统有限公司 | Method for reducing tungsten roughness and improving reflectivity |
| CN102637780A (en) * | 2012-04-27 | 2012-08-15 | 保定天威薄膜光伏有限公司 | Preparation method for improving performance of industrial silicon thin-film cell component |
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| US7125583B2 (en) * | 2002-05-23 | 2006-10-24 | Intel Corporation | Chemical vapor deposition chamber pre-deposition treatment for improved carbon doped oxide thickness uniformity and throughput |
| CN101494171B (en) * | 2008-01-24 | 2010-08-25 | 中芯国际集成电路制造(上海)有限公司 | Silicon nitride preparation method capable of reducing leakage current |
| CN101638776B (en) * | 2008-07-30 | 2012-03-21 | 中芯国际集成电路制造(上海)有限公司 | Pretreatment method in chemical vapor deposition |
| JP5623786B2 (en) * | 2009-05-22 | 2014-11-12 | 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． | Thin film deposition equipment |
| JP5959991B2 (en) * | 2011-11-25 | 2016-08-02 | 東京エレクトロン株式会社 | Method for forming tungsten film |
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| CN101572272A (en) * | 2008-04-30 | 2009-11-04 | 深超光电（深圳）有限公司 | Chemical vapor deposition manufacturing flow and pre-deposition layer structure of membrane transistor |
| CN102084462A (en) * | 2008-08-29 | 2011-06-01 | 诺发系统有限公司 | Method for reducing tungsten roughness and improving reflectivity |
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