CN107511317A - Piezoelectric ultrasonic transducer and preparation method thereof - Google Patents
Piezoelectric ultrasonic transducer and preparation method thereof Download PDFInfo
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- CN107511317A CN107511317A CN201710643625.3A CN201710643625A CN107511317A CN 107511317 A CN107511317 A CN 107511317A CN 201710643625 A CN201710643625 A CN 201710643625A CN 107511317 A CN107511317 A CN 107511317A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 11
- 229920000642 polymer Polymers 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 229910017083 AlN Inorganic materials 0.000 claims description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 229910052573 porcelain Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 14
- 230000008878 coupling Effects 0.000 abstract description 5
- 238000010168 coupling process Methods 0.000 abstract description 5
- 238000005859 coupling reaction Methods 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 5
- 230000009467 reduction Effects 0.000 abstract description 4
- 230000010355 oscillation Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
- B06B1/0607—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Transducers For Ultrasonic Waves (AREA)
Abstract
The present invention provides a kind of piezoelectric ultrasonic transducer and preparation method thereof, piezoelectric ultrasonic transducer includes vibrating diaphragm and the piezoelectric film on vibrating diaphragm that is sticked, and fringe region of the vibrating diaphragm close to substrate direction, which is provided with, can produce the electric resistance structure that Joule heat rises vibrating diaphragm local temperature under "on" position.Due to the material that vibrating diaphragm is risen using Young's modulus such as silica with temperature and is reduced, heating can cause the integral, flexible coefficient of vibrating diaphragm to reduce, and the electromechanical coupling factor increase of transducer, acoustic pressure output changes；On the other hand, resonant frequency during diaphragm oscillations reduces with the reduction of coefficient of elasticity, realizes the dynamic adjustment of ultrasonic output frequency.
Description
Technical field
The present invention relates to sonac field, more particularly to a kind of piezoelectric ultrasonic transducer and preparation method thereof.
Background technology
Sonac is had a wide range of applications in social production life, including Ultrasonic machining, localization by ultrasonic, ultrasound are visited
The each side such as survey, ultrasonic imaging.The device mutually changed as electric energy and mechanical energy, ultrasonic transducer are the weights of sonac
Want building block.Traditional ultrasonic transducer is typically based on machining and is made, thus with volume it is larger, machining accuracy compared with
Low, processing cost is higher, it is difficult to the shortcomings of forming array structure.Based on MEMS (Microelectromechanical
Systems, MEMS) technology ultrasonic transducer because being process using microelectronic technique, diameter dimension can be reduced to
Micron level, resonant frequency can reach hundreds of megahertzs, the precision that higher resonant frequency is added significantly to be imaged and detected.Separately
Outside, the ultrasonic transducer unit being processed into by MEMS technology can form large scale array, and unit uniformity is preferable, be easy to use phase
Position control technology realizes the functions such as the focusing of ultrasonic beam, discrete, direct scan, greatly strengthen the flexible of ultrasonic technique application
Property.
Current MEMS ultrasonic transducers mainly have two kinds of condenser type and piezoelectric type, wherein MEMS capacitive ultrasonic transducer
It is made up of upper and lower two battery lead plates, by the static-electronic driving between battery lead plate, has that electromechanical coupling factor is larger, resonant frequency
The advantages of higher, but there is also driving voltage it is higher, be difficult to by effect of parasitic capacitance is larger, electricity output impedance is larger
Match somebody with somebody, the shortcomings of receiving efficiency and emission effciency are difficult to take into account；Compared with capacitive ultrasound transducer, piezoelectric type ultrasonic transducer by
Piezoelectric layer, vibration level and upper and lower metal electrode are formed, and have driving voltage is low, output impedance is low, launches receiving efficiency to take into account
Advantage, therefore applied in many occasions.But after the physical dimension of MEMS piezoelectric type ultrasonic transducers is fixed, transducer
Output performance such as resonant frequency, output acoustic pressure etc. also fixed, and on the other hand, because the output of different resonant frequencies surpasses
Penetration depth of the sound wave in air or liquid is inconsistent, and in different applications, transducer, which needs to provide, different penetrates depth
Degree and output acoustic pressure, therefore the adjustable MEMS piezoelectric ultrasonic transducers of realisation dynamic are technologies in the urgent need to address at present
Problem, have great importance to realizing the optimization of sensor performance and reducing testing cost.
Therefore, it is necessary that providing a kind of new piezoelectric ultrasonic transducer solves the above problems in fact.
The content of the invention
The present invention provides a kind of piezoelectric ultrasonic transducer to realize the optimization in different application occasion lower sensor performance.
In order to solve the above technical problems, the invention provides a kind of piezoelectric ultrasonic transducer, including center to be provided with cavity
Substrate, fixed vibrating diaphragm on the substrate, the piezoelectric film being connected with the vibrating diaphragm, the piezoelectric film include the close vibrating diaphragm
First surface and away from the vibrating diaphragm second surface, the piezoelectric ultrasonic transducer also include be arranged at the first surface
First electrode and be arranged at the second electrode of the second surface, the vibrating diaphragm is provided with energization close to the fringe region of substrate
The electric resistance structure that Joule heat rises the local temperature of the vibrating diaphragm can be produced under state.
Preferably, the electric resistance structure is arranged at vibrating diaphragm close to the surface of piezoelectric film.
Preferably, the size of the piezoelectric film is less than the size of vibrating diaphragm, and the piezoelectric film is arranged in the vibrating diaphragm
Heart position.
Preferably, the electric resistance structure is set around the piezoelectric film.
Preferably, the electric resistance structure is foldable structure, linear structure or block structure.
Preferably, the substrate is prepared using any one in silicon, sapphire, ceramics, glass or polymer.
Preferably, the vibrating diaphragm use silica, polysilicon, silicon nitride or polymer in any one prepare and
Into.
Preferably, the piezoelectric film is prepared using any one in aluminium nitride, zinc oxide or lead zirconate titanate.
The first electrode, second electrode use any one conductive material in molybdenum, platinum or aluminium to be prepared.
To solve the above problems, the present invention also provides a kind of preparation method of piezoelectric supersonic converter as described above, its
Comprise the following steps：
Substrate is prepared, and vibrating diaphragm is deposited in substrate；
First electrode is prepared in the center of a side surface of the vibrating diaphragm away from substrate, and resistance junction is prepared at the edge of vibrating diaphragm
Structure；
Piezoelectric film is prepared on surface of the first electrode away from vibrating diaphragm；
Second electrode is prepared on piezoelectric film surface；
Etched in substrate to form cavity.
Compared to prior art, piezoelectric ultrasonic transducer of the invention includes vibrating diaphragm and the piezoelectric film being arranged on vibrating diaphragm,
Vibrating diaphragm is provided with close to the fringe region of substrate can produce the resistance that Joule heat rises vibrating diaphragm local temperature under "on" position
Structure.Due to the material that vibrating diaphragm is risen using Young's modulus such as silica with temperature and is reduced, heating can cause the whole of vibrating diaphragm
Body elasticity coefficient is reduced, and the electromechanical coupling factor increase of transducer, acoustic pressure output is changed；On the other hand, diaphragm oscillations
When resonant frequency reduce with the reduction of coefficient of elasticity, realize ultrasonic output frequency dynamic adjustment.
Brief description of the drawings
Fig. 1 is the structural representation of piezoelectric ultrasonic transducer of the present invention；
Fig. 2 is the overlooking the structure diagram of piezoelectric ultrasonic transducer of the present invention；
Fig. 3 is the flow chart of piezoelectric ultrasonic transducer preparation method of the present invention.
Embodiment
Below in conjunction with drawings and embodiments, the invention will be further described.
As shown in figure 1, the piezoelectric ultrasonic transducer of present embodiment, including substrate 1, fixed vibrating diaphragm 2 on the base 1 with
And the piezoelectric film 4 on vibrating diaphragm 2 that is sticked.Substrate 1 is provided centrally with cavity 10, and vibrating diaphragm 2 is fixed on the base 1 and covers cavity
10。
Vibrating diaphragm is provided with the electric resistance structure 3 that Joule heat can be produced under "on" position close to the fringe region of substrate 1.Resistance
Structure 3 can cause the local temperature of vibrating diaphragm 2 to rise, so as to change the coefficient of elasticity of vibrating diaphragm.
Piezoelectric film 4 includes the first surface 41 close to vibrating diaphragm 2 and the second surface 42 away from vibrating diaphragm 2.Electrode is to be sticked
Battery lead plate on piezoelectric film 4, specifically, including the first electrode 5 that is sticked on the first surface 41 of piezoelectric film 4 and being arranged on the
Second electrode 6 on two surfaces 42.
Projected area of the piezoelectric film 4 on vibrating diaphragm 2 is less than vibrating diaphragm 2.Piezoelectric film 4 is arranged on the middle position of vibrating diaphragm 2.The
One electrode 5, second electrode 6 are consistent with the profile of piezoelectric film 4.
As shown in Fig. 2 electric resistance structure 3 is arranged on vibrating diaphragm 2 on the first surface 41 of the side of piezoelectric film 4, and piezoelectricity
The size less than vibrating diaphragm of film 4, it is preferred that piezoelectric film 4 is arranged at the center of vibrating diaphragm 2.Electric resistance structure 3 is arranged on vibrating diaphragm and leaned on
The fringe region of nearly substrate 1, specifically, to be arranged on the fringe region that vibrating diaphragm 2 deviates from the side surface of substrate 1 one.The ring of electric resistance structure 3
Set around piezoelectric film 4, be spaced specially around first electrode 5 and with first electrode 5 and insulation set.Electric resistance structure 3 is metal
Resistance, can produce Joule heat in the energized state rises the local temperature of vibrating diaphragm 2.Electric resistance structure 3 can be foldable structure or
The resistance wire or resistor disc of linear structure or block structure, as long as play under "on" position so that local temperature is raised to change
The integral, flexible coefficient of vibrating diaphragm, it is to implement to adapt to the demand under different occasions.
The material for preparing of substrate 1 can be using silicon, sapphire, ceramics, glass or polymer etc., it is preferred that in this implementation
It is silicon base in mode；Vibrating diaphragm 2 prepares material and can use silica, polysilicon, silicon nitride or polymer etc., specifically
In the present embodiment, it is silica；Piezoelectric film 4 prepare material can use AlN (aluminium nitride), ZnO (zinc oxide) or
PZT (piezoelectric ceramic transducer, lead titanate piezoelectric ceramics)；The material for preparing of electrode uses Mo
(molybdenum), Pt (platinum) or Al (aluminium), wherein first electrode 5 and second electrode 6 can use identical material to prepare, and can also use
It is prepared by different materials.
Due to vibrating diaphragm 2 using a kind of Young's modulus of silica, polysilicon, silicon nitride or polymer with temperature
The material for rising and reducing, therefore the heating of electric resistance structure 3 can cause the integral, flexible coefficient of vibrating diaphragm to reduce, the mechanical-electric coupling of transducer
Coefficient increases, and acoustic pressure output is changed；On the other hand, resonant frequency during diaphragm oscillations subtracts with the reduction of coefficient of elasticity
It is small, realize the dynamic adjustment of ultrasonic output frequency.So, under specific occasion, piezoelectric ultrasonic transducer can be by right
Electric resistance structure carries out heating power and changes the performance of product, to adapt to the demand of corresponding occasion.
As shown in figure 3, for the preparation method of piezoelectric ultrasonic transducer of the present invention, specifically comprise the following steps：
A., substrate 1 prepared by silicon materials is provided, and deposition prepares vibrating diaphragm 2 on the base 1, the vibrating diaphragm uses titanium dioxide
Any one in silicon, polysilicon, silicon nitride or polymer is prepared, and specific method is：First respectively with acidic cleaning solution and
Alkaline cleaning fluid cleans substrate 1, is afterwards again rinsed well substrate 1 with deionized water；Followed by low-pressure chemical vapor deposition
Equipment is in the surface deposit thickness of substrate 1Vibrating diaphragm 2；
B. prepare first electrode 5 on vibrating diaphragm 2 and electric resistance structure 3, specific method are：Utilize vacuum evaporation equipment or sputtering
Equipment is prepared on vibrating diaphragm 2The first electrode 5 of thickness, the first electrode 5 can be by molybdenum, platinum or aluminium
One of formed, or can be composite bed, the composite bed of titanium and platinum to form chromium and gold；Then resist coating, photolithographic exposure,
Form litho pattern；With corrosion corrosion metal film, the first electrode 5 and the structure of resistance 3 of figure needed for formation, residual light is removed
Photoresist, complete the preparation of first electrode 5 and electric resistance structure 3；
C. piezoelectric film 4 is prepared on the surface of first electrode 5, specific method is：Using true first on the surface of first electrode 5
It is prepared by empty evaporated device or sputtering equipmentThe piezoelectric material layer of thickness, then resist coating, photolithographic exposure, shape
Into litho pattern；With corrosion corrosion piezoelectric material layer, figure needed for formation, residual photoresist is removed, complete the system of piezoelectric film 4
It is standby；
D. second electrode 6 is prepared on the surface of piezoelectric film 4, specific method is：The resist coating on piezoelectric film 4, photoetching expose
Light, the anti-graphics of second electrode 6 are formed, i.e., need not form the opening position resist coating of second electrode 6；Vacuum is steamed successively again
Plating or magnetron sputtering The second electrode lay of thickness, the selection of its material and the material phase selection of first electrode 5 are same；
Photoresist is removed with acetone, completes the preparation of second electrode 6；
E, etch on the base 1 to form cavity 10, specific method is：The front of substrate 1 is tied first by photoresist
Structure protects (i.e. close to the structure on the surface of vibrating diaphragm), is formed sediment using low pressure chemical vapor deposition equipment on the back side of substrate 1
Accumulating thickness isSilicon dioxide layer, the resist coating on the back side of substrate 1, photolithographic exposure, need etch release
The place in hole forms litho pattern；Silicon dioxide etching liquid is put into after development is dried, corroding needs mask window, removes residual
Remaining light photoresist, is then placed in the etching that back side release aperture is carried out in dry method deep silicon etching equipment, and etching depth isComplete the release of diaphragm for transducer 2.Certainly, in this step, silica is formed at the back side of substrate 1
Layer is not necessary, directly substrate 1 can be performed etching to form cavity 10 yet, and it is to pass through titanium dioxide to set silica
Silicon preferably controls the depth of etching.
Compared to prior art, piezoelectric ultrasonic transducer of the invention includes vibrating diaphragm and the piezoelectric film being arranged on vibrating diaphragm,
Fringe region of the vibrating diaphragm close to substrate direction be provided with can be produced under "on" position Joule heat make vibrating diaphragm local temperature rise
Electric resistance structure.Due to the material that vibrating diaphragm is risen using Young's modulus such as silica with temperature and is reduced, heating can cause vibrating diaphragm
Integral, flexible coefficient reduce, the electromechanical coupling factor of transducer increase, acoustic pressure output is changed；On the other hand, vibrating diaphragm
Resonant frequency during vibration reduces with the reduction of coefficient of elasticity, realizes the dynamic adjustment of ultrasonic output frequency.
Embodiments of the invention are the foregoing is only, are not intended to limit the scope of the invention, it is every to utilize this hair
The equivalent structure or equivalent flow conversion that bright specification and accompanying drawing content are made, or directly or indirectly it is used in other related skills
Art field, is included within the scope of the present invention.
Claims (10)
1. a kind of piezoelectric ultrasonic transducer, including center be provided with the substrate of cavity, fixed vibrating diaphragm on the substrate, with it is described
The connected piezoelectric film of vibrating diaphragm, the piezoelectric film include the first surface close to the vibrating diaphragm and the second table away from the vibrating diaphragm
Face, the piezoelectric ultrasonic transducer also include being arranged at the first electrode of the first surface and are arranged at the second surface
Second electrode, it is characterised in that the vibrating diaphragm is provided with "on" position close to the fringe region of substrate can produce Joule heat
The electric resistance structure for making the local temperature of the vibrating diaphragm increase.
2. piezoelectric ultrasonic transducer according to claim 1, it is characterised in that it is close that the electric resistance structure is arranged at vibrating diaphragm
The surface of piezoelectric film.
3. piezoelectric ultrasonic transducer according to claim 2, it is characterised in that the size of the piezoelectric film is less than vibrating diaphragm
Size, and the piezoelectric film is arranged at the center of the vibrating diaphragm.
4. piezoelectric ultrasonic transducer according to claim 3, it is characterised in that the electric resistance structure is around the piezoelectric film
Set.
5. piezoelectric ultrasonic transducer according to claim 1, it is characterised in that the electric resistance structure is foldable structure, directly
Cable architecture or block structure.
6. piezoelectric ultrasonic transducer according to claim 1, it is characterised in that the substrate is using silicon, sapphire, pottery
Any one in porcelain, glass or polymer is prepared.
7. piezoelectric ultrasonic transducer according to claim 1, it is characterised in that the vibrating diaphragm is using silica, polycrystalline
Any one in silicon, silicon nitride or polymer is prepared.
8. piezoelectric ultrasonic transducer according to claim 1, it is characterised in that the piezoelectric film is using aluminium nitride, oxidation
Any one in zinc or lead zirconate titanate is prepared.
9. piezoelectric ultrasonic transducer according to claim 1, it is characterised in that the first electrode, second electrode use
Any one conductive material in molybdenum, platinum or aluminium is prepared.
10. a kind of preparation method of piezoelectric supersonic converter as claimed in claim 1, it comprises the following steps：
Substrate is prepared, and vibrating diaphragm is deposited in substrate；
First electrode is prepared in the center of a side surface of the vibrating diaphragm away from substrate, and electric resistance structure is prepared at the edge of vibrating diaphragm；
Piezoelectric film is prepared on surface of the first electrode away from vibrating diaphragm；
Second electrode is prepared on piezoelectric film surface；
Etched in substrate to form cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710643625.3A CN107511317B (en) | 2017-07-31 | 2017-07-31 | Piezoelectric ultrasonic transducer and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710643625.3A CN107511317B (en) | 2017-07-31 | 2017-07-31 | Piezoelectric ultrasonic transducer and preparation method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN107511317A true CN107511317A (en) | 2017-12-26 |
| CN107511317B CN107511317B (en) | 2020-02-18 |
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| CN201710643625.3A Expired - Fee Related CN107511317B (en) | 2017-07-31 | 2017-07-31 | Piezoelectric ultrasonic transducer and preparation method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108433744A (en) * | 2018-04-23 | 2018-08-24 | 中国科学院苏州生物医学工程技术研究所 | Ultrasonic transducer, ultrasonic probe, ultrasonic probe and ultrasonic hydrophone |
| CN109231150A (en) * | 2018-09-06 | 2019-01-18 | 西安交通大学 | A kind of combined film pMUTs and preparation method thereof |
| CN109798944A (en) * | 2018-12-25 | 2019-05-24 | 浙江大学 | Flowmeter and transition time measuring device based on micromechanics piezoelectric supersonic wave transducer |
| CN117225676A (en) * | 2023-11-14 | 2023-12-15 | 南京声息芯影科技有限公司 | Integrated structure of ultrasonic transducer array and CMOS circuit and manufacturing method |
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| JP2016138810A (en) * | 2015-01-28 | 2016-08-04 | パナソニックＩｐマネジメント株式会社 | Ultrasonic transducer and ultrasonic flowmeter using the same |
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| CN1628977A (en) * | 2003-12-10 | 2005-06-22 | 佳能株式会社 | Dielectric thin film element, piezoelectric actuator and liquid discharge head, and method for manufacturing the same |
| US7683522B2 (en) * | 2006-03-03 | 2010-03-23 | Industrial Technology Research Institute | Composite mode transducer and cooling device having the composite mode transducer |
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| CN108433744A (en) * | 2018-04-23 | 2018-08-24 | 中国科学院苏州生物医学工程技术研究所 | Ultrasonic transducer, ultrasonic probe, ultrasonic probe and ultrasonic hydrophone |
| CN108433744B (en) * | 2018-04-23 | 2023-11-28 | 中国科学院苏州生物医学工程技术研究所 | Ultrasonic transducer, ultrasonic probe and ultrasonic hydrophone |
| CN109231150A (en) * | 2018-09-06 | 2019-01-18 | 西安交通大学 | A kind of combined film pMUTs and preparation method thereof |
| CN109231150B (en) * | 2018-09-06 | 2022-09-30 | 西安交通大学 | Combined film pMUTs and preparation method thereof |
| CN109798944A (en) * | 2018-12-25 | 2019-05-24 | 浙江大学 | Flowmeter and transition time measuring device based on micromechanics piezoelectric supersonic wave transducer |
| CN117225676A (en) * | 2023-11-14 | 2023-12-15 | 南京声息芯影科技有限公司 | Integrated structure of ultrasonic transducer array and CMOS circuit and manufacturing method |
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