CN107437654A - Antenna device - Google Patents
Antenna device Download PDFInfo
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- CN107437654A CN107437654A CN201610999342.8A CN201610999342A CN107437654A CN 107437654 A CN107437654 A CN 107437654A CN 201610999342 A CN201610999342 A CN 201610999342A CN 107437654 A CN107437654 A CN 107437654A
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Classifications
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- H—ELECTRICITY
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- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
- H01Q9/04—Resonant antennas
- H01Q9/06—Details
- H01Q9/065—Microstrip dipole antennas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/48—Earthing means; Earth screens; Counterpoises
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/24—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the orientation by switching energy from one active radiating element to another, e.g. for beam switching
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
- H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/92—Specific sequence of method steps
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- H01L2224/92244—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Details Of Aerials (AREA)
Abstract
一种天线装置,包含封装体与至少一天线。封装体包含至少一射频晶片与压模胶材。压模胶材接触射频晶片的至少一侧壁。天线具有至少一导体。导体至少部分在压模胶材中,且导体可操作地连接射频晶片。
An antenna device comprises a package and at least one antenna. The package comprises at least one radio frequency chip and a molding adhesive. The molding adhesive contacts at least one side wall of the radio frequency chip. The antenna has at least one conductor. The conductor is at least partially in the molding adhesive, and the conductor is operably connected to the radio frequency chip.
Description
技术领域technical field
本揭露是有关于一种天线装置。The present disclosure relates to an antenna device.
背景技术Background technique
系统级封装(System in package;SiP)为多个集成电路包覆在单一的模块中。系统级封装体可于电子装置中执行多个功能,且一般用于移动电话、数字音乐播放机等等。在系统级封装体中的晶片可堆叠在基板上,且连接导线。或者,利用覆晶(Flip chip)技术,以焊球来连接堆叠的晶片,此意指多功能单元可设置于多晶片的封装体中,使得封装体仅需少量的外部零件来让其运作。System in package (SiP) is a package of multiple integrated circuits in a single module. A system-in-package can perform multiple functions in an electronic device, and is commonly used in mobile phones, digital music players, and the like. Dies in a system-in-package can be stacked on a substrate and connected with wires. Alternatively, using flip chip technology, solder balls are used to connect the stacked chips, which means that the multi-function unit can be placed in a multi-chip package, so that the package only needs a small number of external components to operate.
发明内容Contents of the invention
根据本揭露多个实施方式,一种天线装置包含封装体与至少一天线。封装体包含至少一射频晶片与压模胶材。压模胶材接触射频晶片的至少一侧壁。天线包含至少一导体。导体至少部分在压模胶材中,且导体可操作地连接射频晶片。According to various embodiments of the present disclosure, an antenna device includes a package and at least one antenna. The package body includes at least one radio frequency chip and molding glue. The stamping glue is in contact with at least one side wall of the radio frequency chip. The antenna includes at least one conductor. The conductor is at least partially within the molding compound, and the conductor is operatively connected to the RF die.
附图说明Description of drawings
当结合所附附图阅读时,以下详细描述将较容易理解本揭露的态样。应注意,根据工业中的标准实务,各特征并非按比例绘制。事实上,出于论述清晰的目的,可任意增加或减小各特征的尺寸。Aspects of the present disclosure will be more readily understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or decreased for clarity of discussion.
图1绘示根据本揭露多个实施方式的天线装置的俯视图;FIG. 1 shows a top view of an antenna device according to various embodiments of the present disclosure;
图2绘示图1的天线装置沿线段2的剖面图;FIG. 2 shows a cross-sectional view of the antenna device of FIG. 1 along a line segment 2;
图3绘示图1的第一天线的立体透视图;FIG. 3 illustrates a perspective view of the first antenna of FIG. 1;
图4~13绘示根据本揭露多个实施方式的天线装置制作方法的剖面图;4-13 illustrate cross-sectional views of antenna device manufacturing methods according to various embodiments of the present disclosure;
图14绘示图13的第一天线的俯视图;FIG. 14 is a top view of the first antenna shown in FIG. 13;
图15绘示图14的第一天线沿线段15的剖面图;FIG. 15 shows a cross-sectional view of the first antenna of FIG. 14 along a line segment 15;
图16~21绘示根据本揭露多个实施方式的第一天线的俯视图;16-21 illustrate top views of a first antenna according to various embodiments of the present disclosure;
图22~26绘示图13的后的天线装置制作方法的剖面图;22 to 26 illustrate cross-sectional views of the manufacturing method of the antenna device shown in FIG. 13;
图27绘示根据本揭露多个实施方式的天线装置的剖面图;FIG. 27 illustrates a cross-sectional view of an antenna device according to various embodiments of the present disclosure;
图28绘示根据本揭露多个实施方式的天线装置的剖面图;FIG. 28 illustrates a cross-sectional view of an antenna device according to various embodiments of the present disclosure;
图29绘示根据本揭露多个实施方式的天线装置的剖面图;FIG. 29 shows a cross-sectional view of an antenna device according to various embodiments of the present disclosure;
图30绘示根据本揭露多个实施方式的天线装置的剖面图;FIG. 30 shows a cross-sectional view of an antenna device according to various embodiments of the present disclosure;
图31绘示根据本揭露多个实施方式的辐射元件的局部剖面图;FIG. 31 shows a partial cross-sectional view of a radiation element according to various embodiments of the present disclosure;
图32绘示根据本揭露多个实施方式的重布线层、接地元件与辐射元件的俯视图;32 is a top view of a redistribution layer, a ground element, and a radiation element according to various embodiments of the present disclosure;
图33绘示图32的重布线层、接地元件与辐射元件的立体透视图;FIG. 33 is a three-dimensional perspective view of the redistribution layer, the ground element and the radiation element of FIG. 32;
图34绘示根据本揭露多个实施方式的重布线层、接地元件与辐射元件的立体透视图;34 is a perspective view illustrating a redistribution layer, a ground element, and a radiation element according to various embodiments of the present disclosure;
图35绘示根据本揭露多个实施方式的重布线层、接地元件与辐射元件的立体透视图;35 is a perspective view illustrating a redistribution layer, a ground element, and a radiation element according to various embodiments of the present disclosure;
图36绘示根据本揭露多个实施方式的重布线层、接地元件、辐射元件与导向器的俯视图;36 is a top view of a redistribution layer, a ground element, a radiation element, and a director according to various embodiments of the present disclosure;
图37绘示图36的重布线层、接地元件、辐射元件与导向器的立体透视图。FIG. 37 is a three-dimensional perspective view of the redistribution layer, the ground element, the radiation element and the director of FIG. 36 .
具体实施方式detailed description
以下揭示内容提供许多不同实施例或实例,以便实施所提供标的的不同特征。下文描述组件及排列的特定实例以简化本揭露。当然,该等实例仅为示例且并不意欲为限制性。举例来说,以下描述中在第二特征上方或第二特征上形成第一特征可包括以直接接触形成第一特征及第二特征的实施例,且亦可包括可在第一特征与第二特征之间形成额外特征以使得第一特征及第二特征可不处于直接接触的实施例。另外,本揭露可在各实例中重复元件符号及/或字母。此重复是出于简明性及清晰的目的,且本身并不指示所论述的各实施例及/或配置之间的关系。The following disclosure provides many different embodiments, or examples, for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these examples are examples only and are not intended to be limiting. For example, in the following description, forming a first feature over or on a second feature may include embodiments where the first and second features are formed in direct contact, and may also include embodiments where the first and second features may be formed in direct contact. An embodiment where additional features are formed between features such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat element symbols and/or letters in each example. This repetition is for the purposes of brevity and clarity and does not in itself indicate a relationship between the various embodiments and/or configurations discussed.
进一步地,为了便于描述,本文可使用空间相对性术语(诸如“之下”、“下方”、“下部”、“上方”、“上部”及类似者)来描述诸图中所绘示一个元件或特征与另一元件(或多个元件)或特征(或多个特征)的关系。除了诸图所描绘的定向外,空间相对性术语意欲包含使用或操作中装置的不同定向。设备可经其他方式定向(旋转90度或处于其他定向),因此可同样解读本文所使用的空间相对性描述词。Further, for ease of description, spatially relative terms (such as "under", "under", "lower", "above", "upper" and the like may be used herein to describe an element depicted in the figures. The relationship of a feature or feature to another element (or elements) or feature (or features). Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and thus the spatially relative descriptors used herein should be interpreted similarly.
图1绘示根据本揭露多个实施方式的天线装置100的俯视图。图2绘示图1的天线装置100沿线段2的剖面图。同时参阅图1与图2,天线装置100包含封装体110与至少一第一天线120。封装体110包含至少一射频(RF)晶片114与压模胶材(Molding compound)116,且压模胶材116接触射频晶片114的至少一侧壁111。压模胶材116其内具有至少一通孔112。第一天线120具有至少一导体122。导体122位于压模胶材116的通孔112中,且导体122可操作地连接射频晶片114。换句话说,第一天线120具有在压模胶材116中的至少一导电件或导电通道(也就是导体122)。FIG. 1 illustrates a top view of an antenna device 100 according to various embodiments of the present disclosure. FIG. 2 is a cross-sectional view of the antenna device 100 in FIG. 1 along the line segment 2 . Referring to FIG. 1 and FIG. 2 at the same time, the antenna device 100 includes a package body 110 and at least one first antenna 120 . The package body 110 includes at least one radio frequency (RF) chip 114 and a molding compound 116 , and the molding compound 116 contacts at least one sidewall 111 of the RF chip 114 . The molding rubber material 116 has at least one through hole 112 therein. The first antenna 120 has at least one conductor 122 . The conductor 122 is located in the through hole 112 of the molding compound 116 , and the conductor 122 is operatively connected to the RF chip 114 . In other words, the first antenna 120 has at least one conductive element or conductive channel (ie, the conductor 122 ) in the molding compound 116 .
图3绘示图1的第一天线120的立体透视图。如图3所示,在多个实施方式中,第一天线120为偶极天线(Dipole antenna),包含在压模胶材116中的两导体122。至少其中之一的导体122的俯视形状大致为L形。也就是说,导体122为在压模胶材116中的L形导电墙。在多个实施方式中,至少其中之一的导体122包含辐射元件122r与连接元件122c。连接元件122c连接辐射元件122r而形成L形导电墙。FIG. 3 is a perspective view of the first antenna 120 in FIG. 1 . As shown in FIG. 3 , in various embodiments, the first antenna 120 is a dipole antenna (Dipole antenna), which includes two conductors 122 in the molding compound 116 . The top view shape of at least one of the conductors 122 is substantially L-shaped. That is, the conductor 122 is an L-shaped conductive wall in the molding compound 116 . In various embodiments, at least one of the conductors 122 includes a radiating element 122r and a connecting element 122c. The connecting element 122c is connected to the radiating element 122r to form an L-shaped conductive wall.
同时参阅图1与图2,由于射频晶片114设置于压模胶材116中,因此可达成天线装置100的微小化设计。在多个实施方式中,天线装置100的总厚度可介于约400μm至700μm的范围,例如600μm。Referring to FIG. 1 and FIG. 2 at the same time, since the radio frequency chip 114 is disposed in the molding compound 116 , a miniaturized design of the antenna device 100 can be achieved. In various embodiments, the total thickness of the antenna device 100 may range from about 400 μm to 700 μm, such as 600 μm.
射频晶片114可例如为毫米波(Millimeter wave;MMW)半导体晶片,例如60GHz射频晶片,能使用于WiFi传输模块。此外,天线装置100其内可包含其他型式的晶片(未绘示)来增加其他的功能。这样的设计,天线装置100为毫米波系统级封装体。The radio frequency chip 114 can be, for example, a millimeter wave (Millimeter wave; MMW) semiconductor chip, such as a 60GHz radio frequency chip, which can be used in a WiFi transmission module. In addition, the antenna device 100 may include other types of chips (not shown) to increase other functions. With such a design, the antenna device 100 is a millimeter wave system-in-package.
在多个实施方式中,第一天线120还包含至少一导向器125。导向器125紧邻辐射元件122r,且辐射元件122r位于导向器125与射频晶片114(见图1)之间。导向器125的俯视形状大致为直的,且导向器125为压模胶材116中的导电墙。导向器125可增强第一天线120高频上的增益。In various embodiments, the first antenna 120 further includes at least one director 125 . The director 125 is adjacent to the radiating element 122r, and the radiating element 122r is located between the director 125 and the RF chip 114 (see FIG. 1 ). The top view shape of the guide 125 is substantially straight, and the guide 125 is a conductive wall in the molding compound 116 . The director 125 can enhance the gain of the first antenna 120 at high frequencies.
参阅图2,天线装置100还包含至少一介电层150a。介电层150a位于射频晶片114与压模胶材116上方。此外,天线装置100还包含至少一重布线层160a。重布线层160a位于介电层150a中,且重布线层160a电性连接射频晶片114与第一天线120的导体122。射频晶片114具有相对的两表面117、118。射频晶片114具有至少一导电柱115。导电柱115位于射频晶片114朝向介电层150a的表面118上。重布线层160a电性连接射频晶片114的导电柱115。导体122的连接元件122c(见图3)电性连接重布线层160a,使得第一天线120电性连接射频晶片114。也就是说,射频晶片114可通过重布线层160a接收来自第一天线120的信号,或可通过重布线层160a传送信号至第一天线120。由于射频晶片114与第一天线120的辐射元件122r(见图3)之间无焊料凸块(Solder bump),因此可降低射频晶片114与第一天线120间的电力消耗。Referring to FIG. 2 , the antenna device 100 further includes at least one dielectric layer 150a. The dielectric layer 150 a is located above the RF chip 114 and the molding compound 116 . In addition, the antenna device 100 further includes at least one redistribution layer 160a. The redistribution layer 160 a is located in the dielectric layer 150 a, and the redistribution layer 160 a is electrically connected to the radio frequency chip 114 and the conductor 122 of the first antenna 120 . The radio frequency chip 114 has two opposing surfaces 117 , 118 . The RF chip 114 has at least one conductive pillar 115 . The conductive pillars 115 are located on the surface 118 of the RF chip 114 facing the dielectric layer 150a. The redistribution layer 160 a is electrically connected to the conductive pillar 115 of the radio frequency chip 114 . The connecting element 122c (see FIG. 3 ) of the conductor 122 is electrically connected to the redistribution layer 160a so that the first antenna 120 is electrically connected to the radio frequency chip 114 . That is to say, the radio frequency chip 114 can receive the signal from the first antenna 120 through the redistribution layer 160a, or can transmit the signal to the first antenna 120 through the redistribution layer 160a. Since there is no solder bump between the radio frequency chip 114 and the radiation element 122r (see FIG. 3 ) of the first antenna 120 , the power consumption between the radio frequency chip 114 and the first antenna 120 can be reduced.
在多个实施方式中,天线装置100还可包含至少一第二天线,且第二天线包含至少一馈入线162、至少一接地元件164、至少一介电层150b与至少一辐射元件140。馈入线162与接地元件164可位于不同层中。或者,在多个实施方式中,馈入线162与接地元件164可大致位于同一平面或位于同一层中,且馈入线162与接地元件164可以为部分的重布线层160a。馈入线162位于介电层150a中,且馈入线162电性连接射频晶片114。接地元件164位于介电层150a中且其内具有至少一孔洞166。辐射元件140在接地元件164的投影与接地元件164的孔洞166重叠。介电层150b位于接地元件164与介电层150a上方。辐射元件140位于介电层150b上,且辐射元件140可操作地连接射频晶片114。经由这样的配置,接地元件164用来作为辐射元件140的接地平面,且辐射元件140、接地元件164与馈入线162可产生平板天线(Patch antenna)的功能。举例来说,图2的区域A可视为平板天线。In various embodiments, the antenna device 100 may further include at least one second antenna, and the second antenna includes at least one feeding line 162 , at least one ground element 164 , at least one dielectric layer 150 b and at least one radiation element 140 . The feeding line 162 and the grounding element 164 may be located in different layers. Alternatively, in various embodiments, the feeding line 162 and the grounding element 164 may be substantially located on the same plane or in the same layer, and the feeding line 162 and the grounding element 164 may be part of the redistribution layer 160a. The feeding line 162 is located in the dielectric layer 150 a, and the feeding line 162 is electrically connected to the radio frequency chip 114 . The ground element 164 is located in the dielectric layer 150 a and has at least one hole 166 therein. The projection of the radiation element 140 on the ground element 164 overlaps with the hole 166 of the ground element 164 . The dielectric layer 150b is located above the ground element 164 and the dielectric layer 150a. The radiation element 140 is located on the dielectric layer 150 b, and the radiation element 140 is operatively connected to the radio frequency chip 114 . Through such a configuration, the ground element 164 is used as a ground plane of the radiation element 140 , and the radiation element 140 , the ground element 164 and the feeding line 162 can function as a patch antenna. For example, area A in FIG. 2 can be regarded as a panel antenna.
当天线装置运作时,射频晶片114可经由馈入线162接收来自辐射元件140的信号,或者,射频晶片114可经由馈入线162传送信号至辐射元件140。由于射频晶片114与辐射元件140之间无焊料凸块,因此可降低射频晶片114与平板天线(也就是包含馈入线162、接地元件164与辐射元件140的区域A)间的电力消耗。When the antenna device is in operation, the radio frequency chip 114 can receive the signal from the radiating element 140 through the feeding line 162 , or the radio frequency chip 114 can transmit the signal to the radiating element 140 through the feeding line 162 . Since there is no solder bump between the RF chip 114 and the radiating element 140 , the power consumption between the RF chip 114 and the panel antenna (that is, the area A including the feeding line 162 , the grounding element 164 and the radiating element 140 ) can be reduced.
在多个实施方式中,天线装置100还可包含介电层150c。介电层150c位于介电层150b上方,且辐射元件140位于介电层150c中。介电层150c可避免两相邻辐射元件140彼此电性接触。In various embodiments, the antenna device 100 may further include a dielectric layer 150c. The dielectric layer 150c is located above the dielectric layer 150b, and the radiation element 140 is located in the dielectric layer 150c. The dielectric layer 150c can prevent two adjacent radiation elements 140 from being in electrical contact with each other.
参阅图1,天线装置100包含多个第一天线120与多个辐射元件140。第一天线120设置于靠近压模胶材116的边缘,使得辐射元件140由第一天线120围绕,进而使天线装置100的尺寸得以缩小。应了解到,图1的第一天线120与辐射元件140的数量为示意,并不用以限制本揭露的各种实施方式。Referring to FIG. 1 , the antenna device 100 includes a plurality of first antennas 120 and a plurality of radiation elements 140 . The first antenna 120 is disposed close to the edge of the molding compound 116 , so that the radiation element 140 is surrounded by the first antenna 120 , thereby reducing the size of the antenna device 100 . It should be understood that the numbers of the first antenna 120 and the radiating elements 140 in FIG. 1 are for illustration and are not intended to limit various implementations of the present disclosure.
参阅图2,天线装置100还可包含导热板180。导热板180热耦合于射频晶片114背对介电层150a的表面117,例如经由导热介面材36。表面117位于射频晶片114的背侧。Referring to FIG. 2 , the antenna device 100 may further include a heat conducting plate 180 . The heat conduction plate 180 is thermally coupled to the surface 117 of the radio frequency chip 114 facing away from the dielectric layer 150a, for example, through the heat conduction interface material 36 . Surface 117 is located on the backside of radio frequency die 114 .
此外,天线装置100还可包含至少一缓冲层24与球下金属层(Under-bumpmetallurgy;UBM)191。缓冲层24位于封装体110背对介电层150a的表面,且球下金属层191位于缓冲层24中。一些球下金属层191接触导热板180,另一些球下金属层191接触整合扇出型通道(Through integrated fan-out vias;TIVs)121。In addition, the antenna device 100 may further include at least one buffer layer 24 and an under-bump metallurgy (UBM) 191 . The buffer layer 24 is located on the surface of the package body 110 facing away from the dielectric layer 150 a , and the UBM layer 191 is located in the buffer layer 24 . Some UBM layers 191 contact the heat conducting plate 180 , and other UBM layers 191 contact through integrated fan-out vias (TIVs) 121 .
导热凸块190与电性连接件195分别位于球下金属层191上。电性连接件195电性连接整合扇出型通道121,而导热凸块190热耦合于导热板180。导热板180可将热从射频晶片114传导至导热凸块190,因此可降低射频晶片114的工作温度。在多个实施方式中,导热板180可覆盖射频晶片114的表面117。也就是说,导热板180的面积可大致与射频晶片114的表面117的面积相同,或大于射频晶片114的表面117的面积。这样的设计,射频晶片114可通过其下方与紧邻的导热板180与导热凸块190而具有较大的热扩张面积。The heat conduction bump 190 and the electrical connector 195 are respectively located on the UBM layer 191 . The electrical connector 195 is electrically connected to the integrated fan-out channel 121 , and the heat conduction bump 190 is thermally coupled to the heat conduction plate 180 . The heat conducting plate 180 can conduct heat from the RF chip 114 to the heat conducting bump 190 , thereby reducing the working temperature of the RF chip 114 . In various embodiments, the thermally conductive plate 180 may cover the surface 117 of the radio frequency die 114 . That is to say, the area of the heat conducting plate 180 may be substantially the same as the area of the surface 117 of the RF chip 114 , or larger than the area of the surface 117 of the RF chip 114 . With such a design, the radio frequency chip 114 can have a larger thermal expansion area through the thermally conductive plate 180 and the thermally conductive bump 190 below and adjacent to it.
图4~13绘示根据本揭露多个实施方式的天线装置制作方法的剖面图。参阅图4,粘胶层22形成于载体230上。载体230可以为空白玻璃载体、空白陶瓷载体或类似物。粘胶层22可由粘胶制作,例如紫外光胶、光热转换(Light-to-heat conversion;LTHC)胶或类似物,其他型式的胶亦可使用。缓冲层24形成于粘胶层22上方。缓冲层24为介电层,可以为聚合物层。此聚合物层可包含例如聚酰亚胺(Polyimide)、聚苯并恶唑(Polybenzoxazole;PBO)、苯并环丁烯(Benzocyclobutene;BCB)、ABF(Ajinomoto buildup film)膜、防焊(Solder resist;SR)膜或类似物。缓冲层24可大致为平面层,具有大致均匀的厚度,此厚度可大于约2μm,可介于2μm至40μm的范围。在多个实施方式中,封装体110的上下表面亦可致为平面的。接着,导热板180可形成并图案化在缓冲层24上。导热板180的材质可包含铜、银或金。4 to 13 illustrate cross-sectional views of antenna device manufacturing methods according to various embodiments of the present disclosure. Referring to FIG. 4 , the adhesive layer 22 is formed on the carrier 230 . The carrier 230 may be a blank glass carrier, a blank ceramic carrier, or the like. The adhesive layer 22 can be made of adhesive, such as ultraviolet adhesive, light-to-heat conversion (LTHC) adhesive or the like, and other types of adhesive can also be used. The buffer layer 24 is formed on the adhesive layer 22 . The buffer layer 24 is a dielectric layer, which may be a polymer layer. The polymer layer may include, for example, polyimide (Polyimide), polybenzoxazole (Polybenzoxazole; PBO), benzocyclobutene (Benzocyclobutene; BCB), ABF (Ajinomoto buildup film) film, solder resist (Solder resist ; SR) film or the like. The buffer layer 24 may be a substantially planar layer with a substantially uniform thickness, which may be greater than about 2 μm, and may range from 2 μm to 40 μm. In various embodiments, the upper and lower surfaces of the package body 110 may also be planar. Next, a thermally conductive plate 180 may be formed and patterned on the buffer layer 24 . The material of the heat conducting plate 180 may include copper, silver or gold.
参阅图5,晶种层26形成于缓冲层24与导热板180上,例如可经由物理气象沉积(PVD)或金属薄片叠层来形成。晶种层26可包含铜、铜合金、铝、钛、钛合金或上述材料的组合。在多个实施方式中,晶种层26包含钛层与在钛层上方的铜层。或者,晶种层26为铜层。Referring to FIG. 5 , the seed layer 26 is formed on the buffer layer 24 and the thermally conductive plate 180 , for example, by physical vapor deposition (PVD) or metal foil lamination. The seed layer 26 may comprise copper, copper alloys, aluminum, titanium, titanium alloys, or combinations thereof. In various embodiments, the seed layer 26 includes a titanium layer and a copper layer over the titanium layer. Alternatively, the seed layer 26 is a copper layer.
参阅图6,光阻28涂于晶种层26上方,的后被图案化。如此一来,开口30可形成于光阻28中,而使部分晶种层26从开口30裸露。Referring to FIG. 6, a photoresist 28 is coated over the seed layer 26 and then patterned. In this way, the opening 30 can be formed in the photoresist 28 , so that part of the seed layer 26 is exposed from the opening 30 .
参阅图7,导电件32经由镀覆(Plating)而形成于光阻28中,可以为电镀(Electroplating)或化学镀(Electro-less plating)。导电件32镀于裸露的晶种层26上。导电件32可包含铜、铝、钨、镍、焊料或上述材料的合金。导电件32的高度由后续制程所放置的射频晶片114(见图10)厚度来决定。在多个实施方式中,导电件32的高度大于射频晶片114的厚度。在镀上导电件32后,移除光阻28,而得到图8的结构。在光阻28移除后,部分的晶种层26会裸露。Referring to FIG. 7 , the conductive element 32 is formed in the photoresist 28 through plating, which may be electroplating or electro-less plating. Conductive member 32 is plated on exposed seed layer 26 . The conductive member 32 may include copper, aluminum, tungsten, nickel, solder or alloys of the above materials. The height of the conductive member 32 is determined by the thickness of the RF chip 114 (see FIG. 10 ) placed in the subsequent process. In various embodiments, the height of the conductive member 32 is greater than the thickness of the RF die 114 . After the conductive member 32 is plated, the photoresist 28 is removed to obtain the structure of FIG. 8 . After the photoresist 28 is removed, part of the seed layer 26 is exposed.
参阅图9,施以蚀刻步骤来移除裸露的部分晶种层26,其中此蚀刻步骤可包含非等向性(Anisotropic)蚀刻。在此蚀刻步骤后,导热板180为裸露的。晶种层26的多个部分由导电件32覆盖。从另一方面来看,被导电件32覆盖的晶种层26是仍未被蚀刻的。在本文中,导电件32与留在其下方的晶种层26的结合体可视为整合扇出型通道(TIV)121,也可视为通道。一些整合扇出型通道121形成导体122与第一天线120的导向器125。虽然晶种层26与导电件32绘示为分离的两层,但当晶种层26的材质相似或大致相同于其下的导电件32时,晶种层26可与导电件32融合,而让两者之间无可辨别的介面。在其他多个实施方式中,有可辨别的介面存在于晶种层26与其下方的导电件32之间。Referring to FIG. 9 , an etching step is performed to remove the exposed portion of the seed layer 26 , wherein the etching step may include anisotropic etching. After this etching step, the thermally conductive plate 180 is bare. Portions of the seed layer 26 are covered by conductive members 32 . On the other hand, the seed layer 26 covered by the conductive member 32 is still unetched. Herein, the combination of the conductive element 32 and the seed layer 26 remaining therebeneath can be regarded as an integrated fan-out via (TIV) 121 , which can also be referred to as a via. Some integrated fan-out channels 121 form conductors 122 and guides 125 of the first antenna 120 . Although the seed layer 26 and the conductive member 32 are shown as two separate layers, when the material of the seed layer 26 is similar or substantially the same as that of the underlying conductive member 32, the seed layer 26 can be fused with the conductive member 32, and Make the interface indistinguishable between the two. In other embodiments, a discernible interface exists between the seed layer 26 and the underlying conductive member 32 .
图10绘示射频晶片114设置于导热板180上方。射频晶片114可通过导热介面材36粘合于导热板180。射频晶片114可以为其内包含逻辑晶体管的逻辑装置晶片。射频晶片114包含接触导热介面材36的半导体基板(例如硅基板)。射频晶片114的背面接触导热介面材36。FIG. 10 shows that the RF chip 114 is disposed above the heat conducting plate 180 . The radio frequency chip 114 can be bonded to the heat conduction plate 180 through the heat conduction interface material 36 . The radio frequency die 114 may be a logic device die containing logic transistors therein. The RF chip 114 includes a semiconductor substrate (such as a silicon substrate) contacting the thermal interface material 36 . The back surface of the RF chip 114 is in contact with the thermal interface material 36 .
在多个实施方式中,导电柱115(如铜柱)形成为射频晶片114的顶部,且电性耦合于射频晶片114中如晶体管(未绘示)的装置。在多个实施方式中,介电层38形成于射频晶片114的顶面,而导电柱115至少底部位于介电层38中。在多个实施方式中,导电柱115的顶面与介电层38的顶面可大致位于同一水平面。或者,不形成介电层38,而导电柱115凸出于射频晶片114的上介电层(未绘示)。In various embodiments, conductive pillars 115 (such as copper pillars) are formed on top of the RF chip 114 and are electrically coupled to devices such as transistors (not shown) in the RF chip 114 . In various embodiments, the dielectric layer 38 is formed on the top surface of the RF die 114 , and the conductive pillars 115 are at least bottomed in the dielectric layer 38 . In various embodiments, the top surfaces of the conductive pillars 115 and the top surfaces of the dielectric layer 38 may be substantially at the same level. Alternatively, the dielectric layer 38 is not formed, and the conductive pillars 115 protrude from the upper dielectric layer (not shown) of the radio frequency chip 114 .
参阅图11,压模胶材116铸模成型(Molding)于射频晶片114、整合扇出型通道121、导体122与导向器125上。压模胶材116填满射频晶片114、整合扇出型通道121、导体122与导向器125之间的间隙,且可接触缓冲层24。此外,当导电柱115为凸出的导电柱(此设计未绘示),压模胶材116填入导电柱115之间的间隙。压模胶材116的顶面高于导电柱115、整合扇出型通道121、导体122与导向器125的顶端。Referring to FIG. 11 , the molding compound 116 is molded on the RF chip 114 , the integrated fan-out channel 121 , the conductor 122 and the guide 125 . The molding compound 116 fills the gap between the RF chip 114 , the integrated fan-out channel 121 , the conductor 122 and the guide 125 , and can contact the buffer layer 24 . In addition, when the conductive pillars 115 are protruding conductive pillars (this design is not shown), the molding glue 116 fills the gaps between the conductive pillars 115 . The top surface of the molding adhesive 116 is higher than the tops of the conductive pillars 115 , the integrated fan-out channels 121 , the conductors 122 and the guides 125 .
在多个实施方式中,压模胶材116包含聚合物材料。“聚合物”能意指热固性聚合物、热塑性聚合物或上述的组合。聚合物材料能包含例如塑胶材料、环氧树脂、聚酰亚胺、聚对苯二甲酸乙二酯(PET)、聚氯乙烯(PVC)、聚甲基丙烯酸甲酯(PMMA)、掺杂在包含纤维的填充料中的聚合物成分、粘土、陶瓷、无机分子或上述材料的组合。In various embodiments, the molding compound 116 comprises a polymeric material. "Polymer" can mean a thermoset polymer, a thermoplastic polymer, or a combination of the foregoing. Polymer materials can include, for example, plastic materials, epoxy resins, polyimides, polyethylene terephthalate (PET), polyvinyl chloride (PVC), polymethyl methacrylate (PMMA), doped in Polymer components, clays, ceramics, inorganic molecules, or combinations of the above in fillers containing fibers.
接着,执行研磨步骤以减薄压模胶材116直到导电柱115、整合扇出型通道121、导体122与导向器125裸露。研磨后的结构如图12所示,压模胶材116接触射频晶片114的侧壁、整合扇出型通道121、导体122与导向器125。由于经研磨步骤,整合扇出型通道121、导体122与导向器125的顶端大致与导电柱115的顶端位于同一水平面(共平面),且也大致与压模胶材116的顶面位于同一水平面(共平面)。压模胶材116的厚度与整合扇出型通道121、导体122与导向器125的厚度大致相同。也就是说,整合扇出型通道121、导体122与导向器125延伸穿过压模胶材116。待研磨后,可执行清洗步骤,例如经由湿蚀刻移除导电残留物。Next, a grinding step is performed to thin the molding compound 116 until the conductive posts 115 , the integrated fan-out channels 121 , the conductors 122 and the guides 125 are exposed. The structure after grinding is shown in FIG. 12 , the molding adhesive 116 contacts the sidewall of the RF chip 114 , integrates the fan-out channel 121 , the conductor 122 and the guide 125 . Due to the grinding step, the tops of the integrated fan-out channels 121, conductors 122, and guides 125 are approximately on the same level (coplanar) as the tops of the conductive posts 115, and are also approximately on the same level as the top surface of the molding adhesive 116. (coplanar). The thickness of the molding compound 116 is approximately the same as that of the integrated fan-out channel 121 , conductor 122 and guide 125 . That is, the integrated fan-out channel 121 , the conductor 122 and the guide 125 extend through the molding compound 116 . After grinding, a cleaning step may be performed, eg, wet etching to remove conductive residues.
接着请参阅图13,重布线层160a、馈入线162与接地元件164形成于压模胶材116上方。根据各种实施方式,介电层150a与形成在介电层150a中的重布线层160a、馈入线162与接地元件164形成于射频晶片114、压模胶材116、整合扇出型通道121、导体122与导向器125上方。在多个实施方式中,重布线层160a、馈入线162与接地元件164的形成步骤包含形成第一介电层于封装体110上、图案化第一介电层、形成重布线层160a与馈入线162于图案化的第一介电层上、形成第二介电层于第一介电层、重布线层160a与馈入线162上及形成接地元件164于第二介电层上。接着,第三介电层可形成而覆盖接地元件164与第二介电层。第一介电层、第二介电层与第三介电层共同形成图13的介电层150a。Next, please refer to FIG. 13 , the redistribution layer 160 a , the feeding line 162 and the grounding element 164 are formed above the molding compound 116 . According to various embodiments, the dielectric layer 150a and the redistribution layer 160a formed in the dielectric layer 150a, the feeding line 162 and the grounding element 164 are formed on the radio frequency chip 114, the molding compound 116, and the integrated fan-out channel 121 , above the conductor 122 and the guide 125 . In various embodiments, the steps of forming the redistribution layer 160a, the feeding line 162 and the grounding element 164 include forming a first dielectric layer on the package body 110, patterning the first dielectric layer, forming the redistribution layer 160a and the ground element 164. The feeding line 162 is on the patterned first dielectric layer, the second dielectric layer is formed on the first dielectric layer, the redistribution layer 160a and the feeding line 162 are formed, and the ground element 164 is formed on the second dielectric layer . Next, a third dielectric layer can be formed to cover the ground element 164 and the second dielectric layer. The first dielectric layer, the second dielectric layer and the third dielectric layer jointly form the dielectric layer 150 a in FIG. 13 .
在多个实施方式中,重布线层160a、馈入线162与接地元件164的形成步骤包含形成覆铜晶种层(Blanket copper seed layer)、形成与图案化遮罩层(Mask layer)于覆铜晶种层上方、施以电镀以形成重布线层160a、馈入线162与接地元件164、移除遮罩层及施以快速蚀刻(Flash etching)来移除未被重布线层160a、馈入线162与接地元件164覆盖的覆铜晶种层。在其他多个实施方式中,重布线层160a、馈入线162与接地元件164通过沉积至少一金属层、图案化金属层与用介电层150a填满图案化金属层之间的间隙来形成。In various embodiments, the steps of forming the redistribution layer 160a, the feeding line 162 and the ground element 164 include forming a copper seed layer (Blanket copper seed layer), forming and patterning a mask layer (Mask layer) on the overlying Above the copper seed layer, electroplating is applied to form the redistribution layer 160a, the feeding line 162 and the grounding element 164, the mask layer is removed and flash etching is performed to remove the unredistributed layer 160a, the feeding The copper clad seed layer covered by the incoming line 162 and the ground element 164 . In other embodiments, the redistribution layer 160a, the feeding line 162 and the ground element 164 are formed by depositing at least one metal layer, patterning the metal layer, and filling the gap between the patterned metal layers with the dielectric layer 150a .
重布线层160a、馈入线162与接地元件164可包含金属或合金,如包含铝、铜、钨及/或上述材料的合金。在多个实施方式中的介电层150a可包含聚合物,如聚酰亚胺、苯并环丁烯、聚苯并恶唑或类似物。或者,介电层150a可包含无机介电材料,例如硅的氧化物(Silicon oxide)、硅的氮化物(Silicon nitride)、硅的碳化物(Silicon carbide)、硅的氮氧化物(Silicon oxynitride)或类似物。The redistribution layer 160a, the feeding line 162 and the grounding element 164 may include metal or an alloy, such as aluminum, copper, tungsten, and/or an alloy of the aforementioned materials. The dielectric layer 150a in various embodiments may comprise a polymer such as polyimide, benzocyclobutene, polybenzoxazole or the like. Alternatively, the dielectric layer 150a may include an inorganic dielectric material, such as silicon oxide, silicon nitride, silicon carbide, silicon oxynitride. or similar.
图14绘示图13的第一天线120的俯视图。图15绘示图14的第一天线120沿线段15的剖面图。同时参阅图14与图15,重布线层160a经由导电通道161电性连接连接元件122c。在多个实施方式中,单一导向器125紧邻辐射元件122r,但并不用以限制本揭露的各种实施方式。在其他多个实施方式中,如图16所示,两导向器125紧邻辐射元件122r。在其他多个实施方式中,如图17所示,无导向器紧邻辐射元件122r。FIG. 14 is a top view of the first antenna 120 in FIG. 13 . FIG. 15 is a cross-sectional view of the first antenna 120 in FIG. 14 along the line segment 15 . Referring to FIG. 14 and FIG. 15 at the same time, the redistribution layer 160a is electrically connected to the connecting element 122c via the conductive channel 161 . In various embodiments, a single director 125 is in close proximity to the radiating element 122r, but this is not intended to limit the various embodiments of the present disclosure. In other multiple implementations, as shown in FIG. 16 , the two guides 125 are adjacent to the radiation element 122r. In other various embodiments, as shown in FIG. 17, no director is immediately adjacent to the radiating element 122r.
参阅图18,在多个实施方式中,辐射元件122r与连接元件122c之间的夹角θ大于约90度。在多个实施方式中,夹角θ介于100度至150度的范围,例如120度,但并不用以限制本揭露的各种实施方式。在多个实施方式中,单一导向器125紧邻辐射元件122r,但并不用以限制本揭露的各种实施方式。在其他多个实施方式中,如图19所示,无导向器紧邻辐射元件122r。Referring to FIG. 18 , in various embodiments, the angle θ between the radiating element 122r and the connecting element 122c is greater than about 90 degrees. In many embodiments, the included angle θ ranges from 100 degrees to 150 degrees, such as 120 degrees, but it is not limited to various embodiments of the present disclosure. In various embodiments, a single director 125 is in close proximity to the radiating element 122r, but this is not intended to limit the various embodiments of the present disclosure. In other various embodiments, as shown in FIG. 19, no director is immediately adjacent to the radiating element 122r.
参阅图20,在多个实施方式中,导体122不具有连接元件122c,且重布线层160a电性连接位于辐射元件122r端部的辐射元件122r。图20的每一导体122可具有直线的顶部形状。在多个实施方式中,单一导向器125紧邻辐射元件122r,但并不用以限制本揭露的各种实施方式。在其他多个实施方式中,如图21所示,三导向器125紧邻辐射元件122r。Referring to FIG. 20 , in various embodiments, the conductor 122 does not have the connection element 122c, and the redistribution layer 160a is electrically connected to the radiation element 122r at the end of the radiation element 122r. Each conductor 122 of FIG. 20 may have a rectilinear top shape. In various embodiments, a single director 125 is in close proximity to the radiating element 122r, but this is not intended to limit the various embodiments of the present disclosure. In other various embodiments, as shown in FIG. 21 , the three directors 125 are in close proximity to the radiating element 122r.
参阅图22,介电层150b形成于介电层150a上。在多个实施方式中,介电层150b先铸模成型在介电层150a上,然后经研磨来减薄介电层150b。介电层150b可包含压模胶材,例如塑胶材料、环氧树脂、聚酰亚胺、聚对苯二甲酸乙二酯、聚氯乙烯、聚甲基丙烯酸甲酯、掺杂在包含纤维的填充料中的聚合物成分、粘土、陶瓷、无机分子或上述材料的组合。Referring to FIG. 22, a dielectric layer 150b is formed on the dielectric layer 150a. In various embodiments, the dielectric layer 150b is molded on the dielectric layer 150a and then ground to reduce the thickness of the dielectric layer 150b. The dielectric layer 150b may include a molding compound, such as plastic material, epoxy resin, polyimide, polyethylene terephthalate, polyvinyl chloride, polymethyl methacrylate, doped in fiber-containing Polymer components in fillers, clays, ceramics, inorganic molecules, or combinations of the above.
参阅图23,介电层150c与其内的辐射元件140形成于介电层150b上,使得介电层150b位于介电层150a与介电层150c之间。如此一来,辐射元件140位于射频晶片114与压模胶材116上方,且辐射元件140、接地元件164与馈入线162可产生平板天线的功能。在多个实施方式中,辐射元件140可利用电镀法或沉积法来形成,但并不用以限制本揭露的各种实施方式。Referring to FIG. 23 , the dielectric layer 150c and the radiating element 140 therein are formed on the dielectric layer 150b such that the dielectric layer 150b is located between the dielectric layer 150a and the dielectric layer 150c. In this way, the radiation element 140 is located above the RF chip 114 and the molding compound 116 , and the radiation element 140 , the ground element 164 and the feeding line 162 can function as a flat panel antenna. In various implementations, the radiation element 140 can be formed by electroplating or deposition, but this is not intended to limit the various implementations of the present disclosure.
参阅图23与图24,在辐射元件140与介电层150c形成于介电层150b上后,封装体110从载体230上剥离,粘胶层22也从封装体110被清洁去除。接着,从载体230剥离的结构进一步贴合于另一载体240,其中介电层150c朝向载体240,且介电层150c可接触载体240。23 and 24, after the radiation element 140 and the dielectric layer 150c are formed on the dielectric layer 150b, the package body 110 is peeled off from the carrier 230, and the adhesive layer 22 is also cleaned and removed from the package body 110. Referring to FIG. Then, the structure peeled off from the carrier 230 is further attached to another carrier 240 , wherein the dielectric layer 150 c faces the carrier 240 , and the dielectric layer 150 c can contact the carrier 240 .
参阅图25,开口形成于缓冲层24中,然后球下金属层191可选择性地形成于缓冲层24的开口。在多个实施方式中,一些球下金属层191形成在导热板180上,而另一些球下金属层191形成在整合扇出型通道121上。根据多个实施方式,开口是经由激光钻孔法(Laserdrill)而形成在缓冲层24中,另外,光微影制程(Photolithography)亦可采用来形成缓冲层24的开口。Referring to FIG. 25 , an opening is formed in the buffer layer 24 , and then the UBM layer 191 may be selectively formed in the opening of the buffer layer 24 . In various embodiments, some UBM layers 191 are formed on the thermally conductive plate 180 while other UBM layers 191 are formed on the integrated fan-out channel 121 . According to various embodiments, the openings are formed in the buffer layer 24 by laser drilling. In addition, photolithography can also be used to form the openings of the buffer layer 24 .
接着参阅图26,导热凸块190与电性连接件195形成于球下金属层191上。导热凸块190与电性连接件195的形成步骤可包含设置焊球于球下金属层191上(若不形成球下金属层191时,焊球可设置于裸露的导热板180与整合扇出型通道121上),然后回焊焊球。Referring next to FIG. 26 , the heat conduction bump 190 and the electrical connector 195 are formed on the UBM layer 191 . The forming steps of the thermally conductive bump 190 and the electrical connector 195 may include disposing solder balls on the UBM layer 191 (if the UBM layer 191 is not formed, the solder balls may be disposed on the exposed thermally conductive plate 180 and integrated fan-out type via 121), then reflow the solder balls.
在导热凸块190与电性连接件195形成后,移除载体240,且可施以切割制程来切割图26的结构,使得至少一图2的天线装置100产生。After the thermal bumps 190 and the electrical connectors 195 are formed, the carrier 240 is removed, and a dicing process may be performed to cut the structure of FIG. 26 , so that at least one antenna device 100 of FIG. 2 is produced.
图27绘示根据本揭露多个实施方式的天线装置100a的剖面图。在多个实施方式中,天线装置100a还包含介电层150d、150e与至少一导向器125a。介电层150d位于介电层150c与辐射元件140上方,且介电层150e位于介电层150d上方。导向器125a位于介电层150e中且与辐射元件140重叠。导向器125a可增强平板天线(如包含馈入线162、接地元件164与辐射元件140的区域A)高频上的增益。在多个实施方式中,介电层150d可由介电材料制作,例如低耗散因子(Dissipation factor;Df)材料、玻璃、有机材料或类似物。在其他多个实施方式中,介电层150d可由压模胶材制作。FIG. 27 is a cross-sectional view of the antenna device 100a according to various embodiments of the present disclosure. In various embodiments, the antenna device 100a further includes dielectric layers 150d, 150e and at least one director 125a. The dielectric layer 150d is located above the dielectric layer 150c and the radiation element 140, and the dielectric layer 150e is located above the dielectric layer 150d. The director 125a is located in the dielectric layer 150e and overlaps the radiating element 140 . The director 125a can enhance the high-frequency gain of the panel antenna (eg, the area A including the feeding line 162 , the grounding element 164 and the radiating element 140 ). In various embodiments, the dielectric layer 150d can be made of a dielectric material, such as a low dissipation factor (Df) material, glass, organic material, or the like. In other embodiments, the dielectric layer 150d can be made of molded adhesive.
图28绘示根据本揭露多个实施方式的天线装置100b的剖面图。天线装置100b还包含表面粘着装置210(Surface-mount device;SMD)。表面粘着装置210设置于缓冲层24上。在多个实施方式中,导热板180位于表面粘着装置210上方。表面粘着装置210可以为被动元件,例如电阻、电容或电感,但并不用以限制本揭露的各种实施方式。FIG. 28 is a cross-sectional view of an antenna device 100b according to various embodiments of the present disclosure. The antenna device 100b further includes a surface-mount device 210 (Surface-mount device; SMD). The surface mount device 210 is disposed on the buffer layer 24 . In various embodiments, the thermally conductive plate 180 is located above the surface mount device 210 . The surface mount device 210 can be a passive element, such as a resistor, a capacitor, or an inductor, but it is not intended to limit various embodiments of the present disclosure.
图29绘示根据本揭露多个实施方式的天线装置100c的剖面图。在多个实施方式中,介电层150b并非由压模胶材制作。也就是说,介电层150b与压模胶材116是由不同的材料制作。介电层150b可例如由低耗散因子(Df)材料、玻璃、有机材料或类似物制作。在多个实施方式中,介电层150b的低耗散因子小于约0.01,但并不用以限制本揭露的各种实施方式。FIG. 29 is a cross-sectional view of an antenna device 100c according to various embodiments of the present disclosure. In various embodiments, the dielectric layer 150b is not made of molding compound. That is to say, the dielectric layer 150b and the molding compound 116 are made of different materials. The dielectric layer 150b can be made, for example, of low dissipation factor (Df) material, glass, organic material or the like. In various embodiments, the low dissipation factor of the dielectric layer 150b is less than about 0.01, but it is not intended to limit the various embodiments of the present disclosure.
图30绘示根据本揭露多个实施方式的天线装置100d的剖面图。图30的射频晶片114a背对于介电层150a。也就是说,下表面118为射频晶片114a的正面侧。导热介面材36a设置于射频晶片114a朝向介电层150a的表面117。在多个实施方式中,在介电层150a中的接地元件164可作为导热板来扩大热扩张面积。射频晶片114a产生的热可经导热介面材36a传输至接地元件164,进而使热经由整合扇出型通道121与球下金属层191传输至电性连接件195。FIG. 30 is a cross-sectional view of an antenna device 100d according to various embodiments of the present disclosure. The RF die 114a of FIG. 30 faces away from the dielectric layer 150a. That is to say, the lower surface 118 is the front side of the RF chip 114a. The thermal interface material 36a is disposed on the surface 117 of the radio frequency chip 114a facing the dielectric layer 150a. In various embodiments, the ground element 164 in the dielectric layer 150a can act as a thermally conductive plate to expand the thermal expansion area. The heat generated by the radio frequency chip 114 a can be transmitted to the grounding element 164 through the thermal interface material 36 a, and then the heat can be transmitted to the electrical connection 195 through the integrated fan-out channel 121 and the UBM layer 191 .
图31绘示根据本揭露多个实施方式的辐射元件122r的局部剖面图。在多个实施方式中,辐射元件122r包含多个整合扇出型通道122t、多个重布线层160a的区段与多个重布线层160b的区段。整合扇出型通道122t通过重布线层160a的区段与重布线层160b的区段而互相连接,以形成辐射元件122r。这样的设计,因为辐射元件122r具有至少纵向贯穿压模胶材116的整合扇出型通道122t,因此辐射元件122r的俯视尺寸得以缩小。FIG. 31 shows a partial cross-sectional view of a radiation element 122r according to various embodiments of the present disclosure. In various embodiments, the radiating element 122r includes a plurality of integrated fan-out channels 122t, a plurality of segments of redistribution layers 160a, and a plurality of segments of redistribution layers 160b. The integrated fan-out channel 122t is connected to each other through the segment of the redistribution layer 160a and the segment of the redistribution layer 160b to form the radiating element 122r. With such a design, because the radiating element 122r has an integrated fan-out channel 122t at least longitudinally penetrating the molding compound 116 , the plan view size of the radiating element 122r is reduced.
在多个实施方式中,第二天线(例如平板天线)也可至少部分形成于压模胶材116中。图32绘示根据本揭露多个实施方式的重布线层160a、接地元件164a与辐射元件140a的俯视图。图33绘示图32的重布线层160a、接地元件164a与辐射元件140a的立体透视图。同时参阅图32与图33,辐射元件140a与接地元件164a为在压模胶材116中的导电墙,且接地元件164a的俯视形状与辐射元件140a的俯视形状为直线。辐射元件140a与接地元件164a由至少部分的压模胶材116隔开。重布线层160a经由通道161a电性连接辐射元件140a。这样的设计,在压模胶材116中的辐射元件140a与接地元件164a可产生平板天线的功能。在多个实施方式中,辐射元件140a可大致平行于接地元件164a,但并不用以限制本揭露的各种实施方式。In various embodiments, a second antenna (eg, a panel antenna) may also be at least partially formed in the molding compound 116 . FIG. 32 shows a top view of the redistribution layer 160a, the ground element 164a and the radiation element 140a according to various embodiments of the present disclosure. FIG. 33 shows a three-dimensional perspective view of the redistribution layer 160 a , the ground element 164 a and the radiation element 140 a of FIG. 32 . Referring to FIG. 32 and FIG. 33 at the same time, the radiation element 140a and the ground element 164a are conductive walls in the molding compound 116, and the top view shape of the ground element 164a and the top view shape of the radiation element 140a are straight lines. The radiating element 140a is separated from the grounding element 164a by at least a portion of the molding compound 116 . The redistribution layer 160a is electrically connected to the radiation element 140a via the channel 161a. With such a design, the radiating element 140 a and the grounding element 164 a in the molding compound 116 can function as a flat panel antenna. In various embodiments, the radiation element 140a may be substantially parallel to the ground element 164a, but this is not intended to limit the various embodiments of the present disclosure.
在多个实施方式中,如图34所示,另一接地元件164b形成于介电层150b中。接地元件164b经由介电层150a中的通道161b电性连接接地元件164a。In various embodiments, as shown in FIG. 34, another ground element 164b is formed in the dielectric layer 150b. The ground element 164b is electrically connected to the ground element 164a via the via 161b in the dielectric layer 150a.
在多个实施方式中,如图35所示,另一辐射元件140b形成于介电层150b中。辐射元件140b经由介电层150a中的通道161c电性连接辐射元件140a。In various embodiments, as shown in FIG. 35, another radiating element 140b is formed in a dielectric layer 150b. The radiation element 140b is electrically connected to the radiation element 140a via the channel 161c in the dielectric layer 150a.
在多个实施方式中,第二天线具有紧邻辐射元件140a的至少一导向器。图36绘示根据本揭露多个实施方式的重布线层160a、接地元件164a、辐射元件140a与导向器125b的俯视图。图37绘示图36的重布线层160a、接地元件164a、辐射元件140a与导向器125b的立体透视图。在多个实施方式中,如图36与图37所示,导向器125b紧邻辐射元件140a,而辐射元件140a位于导向器125b与接地元件164a之间。导向器125b为在压模胶材116中的导电墙,且导向器125b的俯视形状可例如为直线。导向器125b可增强第二天线高频的增益。在多个实施方式中,导向器125b紧邻辐射元件140a,但并不用以限制本揭露的各种实施方式。在其他多个实施方式中,两个以上的导向器紧邻辐射元件140a。In various embodiments, the second antenna has at least one director proximate to the radiating element 140a. FIG. 36 shows a top view of the redistribution layer 160a, the ground element 164a, the radiation element 140a and the director 125b according to various embodiments of the present disclosure. FIG. 37 shows a three-dimensional perspective view of the redistribution layer 160 a , the ground element 164 a , the radiation element 140 a and the director 125 b of FIG. 36 . In various embodiments, as shown in FIGS. 36 and 37 , the director 125b is immediately adjacent to the radiating element 140a, and the radiating element 140a is located between the director 125b and the ground element 164a. The guide 125b is a conductive wall in the molding compound 116, and the top view shape of the guide 125b can be, for example, a straight line. The director 125b can enhance the gain of the high frequency of the second antenna. In various embodiments, the director 125b is in close proximity to the radiating element 140a, but this is not intended to limit the various embodiments of the present disclosure. In other various embodiments, more than two directors are in close proximity to the radiating element 140a.
在本揭露的多个实施方式中,通过将天线至少部分嵌入压模胶材116,使天线能具有至少一厚部,而天线的此厚部能增强天线的效率与频宽。In various embodiments of the present disclosure, by embedding the antenna at least partially in the molding compound 116 , the antenna can have at least one thick portion, and the thick portion of the antenna can enhance the efficiency and bandwidth of the antenna.
根据本揭露多个实施方式,一种天线装置包含封装体与至少一天线。封装体包含至少一射频晶片与压模胶材。压模胶材接触射频晶片的至少一侧壁。天线包含至少一导体。导体至少部分在压模胶材中,且导体可操作地连接射频晶片。According to various embodiments of the present disclosure, an antenna device includes a package and at least one antenna. The package body includes at least one radio frequency chip and molding glue. The stamping glue is in contact with at least one side wall of the radio frequency chip. The antenna includes at least one conductor. The conductor is at least partially within the molding compound, and the conductor is operatively connected to the RF die.
在本揭露多个实施方式中,上述压模胶材的厚度大致与导体的厚度相同。In various embodiments of the present disclosure, the thickness of the molding adhesive is substantially the same as the thickness of the conductor.
在本揭露多个实施方式中,上述导体为在压模胶材中的导电墙。In various embodiments of the present disclosure, the above-mentioned conductor is a conductive wall in the molding compound.
在本揭露多个实施方式中,上述天线为偶极天线。In various embodiments of the present disclosure, the above-mentioned antenna is a dipole antenna.
在本揭露多个实施方式中,上述天线的导体的俯视形状大致为L形。In various embodiments of the present disclosure, the top view shape of the conductor of the antenna is substantially L-shaped.
在本揭露多个实施方式中,上述导体包含辐射元件。辐射元件至少部分在压模胶材中。天线包含至少一导向器。导向器至少部分在压模胶材中且与辐射元件相隔至少一部分的压模胶材。In various embodiments of the present disclosure, the conductor includes a radiation element. The radiating element is at least partially within the molding compound. The antenna includes at least one director. The guide is at least partially within the die compound and spaced from the radiating element by at least a portion of the die compound.
在本揭露多个实施方式中,上述导体包含辐射元件。辐射元件至少部分在压模胶材中。天线包含至少一接地元件。接地元件至少部分在压模胶材中且与辐射元件相隔至少一部分的压模胶材。In various embodiments of the present disclosure, the conductor includes a radiation element. The radiating element is at least partially within the molding compound. The antenna includes at least one ground element. The ground element is at least partially within the molded compound and is separated from the radiating element by at least a portion of the molded compound.
在本揭露多个实施方式中,上述导体包含辐射元件。辐射元件至少部分在压模胶材中。天线包含至少一接地元件与至少一导向器。辐射元件位于接地元件与导向器之间。In various embodiments of the present disclosure, the conductor includes a radiation element. The radiating element is at least partially within the molding compound. The antenna includes at least one ground element and at least one director. The radiating element is located between the ground element and the director.
在本揭露多个实施方式中,上述天线装置还包含至少一第一介电层、至少一馈入线、至少一接地元件、至少一第二介电层与至少一辐射元件。第一介电层位于射频晶片与压模胶材上方。馈入线位于第一介电层中且电性连接射频晶片。接地元件位于第一介电层中且其内具有至少一孔洞。第二介电层位于接地元件上方。辐射元件位于第二介电层上。辐射元件可操作地连接射频晶片。In various embodiments of the present disclosure, the above-mentioned antenna device further includes at least one first dielectric layer, at least one feeding line, at least one ground element, at least one second dielectric layer, and at least one radiation element. The first dielectric layer is located above the radio frequency chip and the molding compound. The feeding line is located in the first dielectric layer and is electrically connected to the radio frequency chip. The ground element is located in the first dielectric layer and has at least one hole therein. The second dielectric layer is located above the ground element. The radiating element is on the second dielectric layer. The radiating element is operatively connected to the radio frequency chip.
在本揭露多个实施方式中,上述天线装置还包含导热板。导热板热耦合于射频晶片。In various embodiments of the present disclosure, the above-mentioned antenna device further includes a heat conducting plate. The heat conducting plate is thermally coupled to the radio frequency chip.
在本揭露多个实施方式中,上述天线装置还包含至少一导热凸块。导热凸块热耦合于导热板。In various embodiments of the present disclosure, the above-mentioned antenna device further includes at least one heat conduction bump. The heat conduction bump is thermally coupled to the heat conduction plate.
在本揭露多个实施方式中,上述天线装置还包含至少一重布线层。重布线层电性连接射频晶片与天线的导体。In various embodiments of the present disclosure, the above-mentioned antenna device further includes at least one redistribution layer. The redistribution layer is electrically connected to the conductor of the radio frequency chip and the antenna.
根据本揭露多个实施方式,一种天线装置包含封装体、至少一第一介电层、至少一馈入线、至少一接地元件、至少一第二介电层与至少一辐射元件。封装体包含至少一射频晶片与压模胶材。压模胶材接触射频晶片的至少一侧壁。第一介电层位于射频晶片与压模胶材上方。馈入线位于第一介电层中且电性连接射频晶片。接地元件位于第一介电层中且其内具有至少一孔洞。第二介电层位于接地元件上方。辐射元件位于第二介电层上。辐射元件可操作地连接射频晶片。According to various embodiments of the present disclosure, an antenna device includes a package body, at least one first dielectric layer, at least one feeding line, at least one ground element, at least one second dielectric layer and at least one radiation element. The package body includes at least one radio frequency chip and molding glue. The stamping glue is in contact with at least one side wall of the radio frequency chip. The first dielectric layer is located above the radio frequency chip and the molding compound. The feeding line is located in the first dielectric layer and is electrically connected to the radio frequency chip. The ground element is located in the first dielectric layer and has at least one hole therein. The second dielectric layer is located above the ground element. The radiating element is on the second dielectric layer. The radiating element is operatively connected to the radio frequency chip.
在本揭露多个实施方式中,上述射频晶片与辐射元件之间无焊料凸块。In various embodiments of the present disclosure, there is no solder bump between the radio frequency chip and the radiation element.
在本揭露多个实施方式中,上述天线装置还包含至少一第三介电层与至少一导向器。第三介电层位于辐射元件上方。导向器位于第三介电层上。In various embodiments of the present disclosure, the above-mentioned antenna device further includes at least one third dielectric layer and at least one director. A third dielectric layer is over the radiating element. The director is on the third dielectric layer.
在本揭露多个实施方式中,上述第二介电层与压模胶材为不同材料。In various embodiments of the present disclosure, the above-mentioned second dielectric layer and the molding adhesive are made of different materials.
在本揭露多个实施方式中,上述辐射元件在接地元件上的投影与接地元件的孔洞重叠。In various embodiments of the present disclosure, the projection of the radiation element on the ground element overlaps with the hole of the ground element.
根据本揭露多个实施方式,一种天线装置的制作方法包含:形成至少一辐射元件于缓冲层上。设置至少一射频晶片于缓冲层上。铸模成型压模胶材,使射频晶片与辐射元件位于其内。According to various embodiments of the present disclosure, a manufacturing method of an antenna device includes: forming at least one radiation element on a buffer layer. At least one radio frequency chip is arranged on the buffer layer. The molded rubber material is molded so that the radio frequency chip and the radiation element are located therein.
在本揭露多个实施方式中,上述天线装置的制作方法还包含形成至少一导热板于缓冲层上,且射频晶片设置于导热板上。In various embodiments of the present disclosure, the manufacturing method of the antenna device further includes forming at least one heat conduction plate on the buffer layer, and the radio frequency chip is disposed on the heat conduction plate.
在本揭露多个实施方式中,上述天线装置的制作方法还包含形成至少一重布线层,且重布线层电性连接射频晶片与辐射元件。In various embodiments of the present disclosure, the manufacturing method of the antenna device further includes forming at least one redistribution layer, and the redistribution layer is electrically connected to the radio frequency chip and the radiation element.
尽管参看本揭露的某些实施例已相当详细地描述了本揭露,但其他实施例是可能的。因此,所附权利要求书的精神及范畴不应受限于本文所含实施例的描述。Although the disclosure has been described in some detail with reference to certain embodiments of the disclosure, other embodiments are possible. Therefore, the spirit and scope of the appended claims should not be limited to the description of the embodiments contained herein.
将对熟悉此项技术者显而易见的是,可在不脱离本揭露的范畴或精神的情况下对本揭露的结构实行各种修改及变化。鉴于上述,本揭露意欲涵盖本揭露的修改及变化,前提是这些修改及变化属于权利要求书的范畴内。It will be apparent to those skilled in the art that various modifications and changes can be made in the structures of the present disclosure without departing from the scope or spirit of the disclosure. In view of the above, it is intended that the present disclosure cover modifications and variations of this disclosure provided these come within the scope of the appended claims.
上文概述若干实施例的特征,使得熟悉此项技术者可更好地理解本揭露的态样。熟悉此项技术者应了解,可轻易使用本揭露作为设计或修改其他制程及结构的基础,以便实施本文所介绍的实施例的相同目的及/或实现相同优势。熟悉此项技术者亦应认识到,此类等效结构并未脱离本揭露的精神及范畴,且可在不脱离本揭露的精神及范畴的情况下产生本文的各种变化、替代及更改。The foregoing summarizes features of several embodiments so that those skilled in the art may better understand aspects of the present disclosure. Those skilled in the art should appreciate that the present disclosure may be readily used as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments described herein. Those skilled in the art should also realize that such equivalent structures do not depart from the spirit and scope of the present disclosure, and that various changes, substitutions and modifications herein can be made without departing from the spirit and scope of the present disclosure.
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US20220384958A1 (en) | 2022-12-01 |
US12040566B2 (en) | 2024-07-16 |
US20170346185A1 (en) | 2017-11-30 |
US20200411996A1 (en) | 2020-12-31 |
TW201742310A (en) | 2017-12-01 |
US10770795B2 (en) | 2020-09-08 |
US11482788B2 (en) | 2022-10-25 |
US20240332807A1 (en) | 2024-10-03 |
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