CN107422547A - 一种显示面板及显示装置 - Google Patents
一种显示面板及显示装置 Download PDFInfo
- Publication number
- CN107422547A CN107422547A CN201710725885.5A CN201710725885A CN107422547A CN 107422547 A CN107422547 A CN 107422547A CN 201710725885 A CN201710725885 A CN 201710725885A CN 107422547 A CN107422547 A CN 107422547A
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- Prior art keywords
- display panel
- electrode
- public electrode
- pixel
- common electrode
- Prior art date
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- 230000008054 signal transmission Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 48
- 239000004973 liquid crystal related substance Substances 0.000 description 19
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
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- 238000002161 passivation Methods 0.000 description 3
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 210000002858 crystal cell Anatomy 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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- H10D86/441—Interconnections, e.g. scanning lines
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
Abstract
本发明实施例提供一种显示面板及显示装置,涉及显示技术领域,该显示面板中的公共电极与栅线和/或数据线不重叠,从而可降低栅线和/或数据线由于存在寄生电容而对信号传输造成的影响,提高了显示质量。该显示面板包括:衬底基板、设置在所述衬底基板上的多条栅线与数据线;所述栅线与所述数据线交叉限定出多个像素区域;所述显示面板还包括:设置在每个所述像素区域内的像素电极;与所述像素电极相对设置的公共电极;其中,所述公共电极在所述衬底基板上的正投影与所述栅线在所述衬底基板上的正投影无重叠;和/或,所述公共电极在所述衬底基板上的正投影与所述数据线在所述衬底基板上的正投影无重叠。
Description
技术领域
本发明涉及显示技术领域,尤其涉及一种显示面板及显示装置。
背景技术
液晶显示技术广泛应用于电视、手机以及公共信息显示等领域,是目前使用较为广泛的显示技术。液晶屏由阵列基板与对置基板对盒构成,并将液晶材料密封于阵列基板与对置基板之间。阵列基板包括栅线、数据线,二者相互交叉定义出一个像素单元。
以TN(Twist Nematic,即液晶扭曲向列型)模式的液晶显示器件为例,对应于各个像素单元的独立的像素电极设置在阵列基板,整面设计的公共电极设置在对置基板,公共电极与像素电极之间形成电场,以驱动液晶进行显示。
在传统的液晶显示器件中,由于公共电极为整面设计,即为一整块大的电极对应于各个像素单元,公共电极与栅线、数据线相重叠的区域会产生寄生电容,造成栅线、数据线上的信号传输时发生变形,影响显示质量。
发明内容
鉴于此,为解决现有技术的问题,本发明的实施例提供一种显示面板及显示装置,该显示面板中的公共电极与栅线和/或数据线不重叠,从而可降低栅线和/或数据线由于存在寄生电容而对信号传输造成的影响,提高了显示质量。
为达到上述目的,本发明的实施例采用如下技术方案:
本发明实施例提供了一种显示面板,包括:衬底基板、设置在所述衬底基板上的多条栅线与数据线;所述栅线与所述数据线交叉限定出多个像素区域;所述显示面板还包括:设置在每个所述像素区域内的像素电极;所述显示面板还包括:与所述像素电极相对设置的公共电极;其中,所述公共电极在所述衬底基板上的正投影与所述栅线在所述衬底基板上的正投影无重叠;和/或,所述公共电极在所述衬底基板上的正投影与所述数据线在所述衬底基板上的正投影无重叠。
作为一种可选的方式,所述多个像素区域呈阵列排布;所述公共电极呈条状设置在相邻两条所述栅线之间,且一条所述公共电极对应于一行所述像素电极。
作为另一种可选的方式,所述多个像素区域呈阵列排布;所述公共电极呈条状设置在相邻两条所述数据线之间,且一条所述公共电极对应于一列所述像素电极。
作为再一种可选的方式,所述多个像素区域呈阵列排布;所述公共电极呈方块状设置在每个所述像素区域内;所述显示面板还包括:多个第一连接电极和多个第二连接电极;其中,每个所述公共电极与相邻行的相对的另一个所述公共电极通过所述第一连接电极电性连通;每个所述公共电极与相邻列的相对的另一个所述公共电极通过所述第二连接电极电性连通。
优选的,所述第一连接电极沿行方向的宽度小于靠近的所述像素电极沿所述行方向的长度的1/4;和/或,所述第二连接电极沿列方向的宽度小于靠近的所述像素电极沿所述列方向的长度的1/4。
可选的,所述显示面板划分有显示区域;所述公共电极位于所述显示区域内;所述显示面板还包括,与所述公共电极同层设置的公共电极框;所述公共电极框位于所述显示区域之外;第一行所述公共电极、最后一行所述公共电极通过所述第一连接电极与所述公共电极框连接;第一列所述公共电极、最后一列所述公共电极通过所述第二连接电极与所述公共电极框连接。
可选的,所述显示面板划分有显示区域;所述公共电极至少位于所述显示区域内;所述显示面板还包括,与所述公共电极同层设置的公共电极框;所述公共电极框位于所述显示区域之外,并与每个所述公共电极连接。
可选的,所述显示面板还包括:黑矩阵和彩膜层;其中,所述黑矩阵位于所述衬底基板与所述像素电极所在的层之间;所述黑矩阵包括与所述像素电极一一对应的镂空区域;所述彩膜层包括与所述像素电极一一对应的彩膜块;每个所述彩膜块至少有部分区域位于所述镂空区域。
在上述基础上优选的,所述显示面板还包括:与所述衬底基板相对设置的对置基板;所述栅线、所述数据线和所述像素电极均设置在所述衬底基板朝向所述对置基板的一侧;所述公共电极设置在所述对置基板朝向所述衬底基板的一侧。
在上述基础上优选的,所述栅线、所述数据线、所述像素电极和所述公共电极均设置在所述衬底基板上;其中,所述公共电极位于所述衬底基板与所述像素电极之间,且所述像素电极上设置有狭缝;或者,所述像素电极位于所述衬底基板与所述公共电极之间,且所述公共电极上设置有狭缝。
本发明实施例还提供一种显示装置,包括上述的显示面板。
基于此,本发明实施例通过对公共电极的图形进行调整,使其不与相邻的栅线重叠,或者不与相邻的数据线重叠,或者与栅线、数据线均不重叠,从而可降低栅线和/或数据线由于存在寄生电容而对信号传输造成的影响,提高了显示质量。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本发明实施例提供的一种显示面板的俯视结构示意图一;
图2为本发明实施例提供的一种显示面板的俯视结构示意图二;
图3为本发明实施例提供的一种显示面板的俯视结构示意图三;
图4为包括有图1中所示的公共电极的公共电极层的平面结构示意图;
图5为包括有图2中所示的公共电极的公共电极层的平面结构示意图;
图6为包括有图3中所示的公共电极的公共电极层的平面结构示意图;
图7为本发明实施例1提供的一种显示面板的俯视结构示意图;
图8为沿图7中A1-A2方向的剖面结构示意图;
图9为本发明实施例2提供的一种显示面板的俯视结构示意图;
图10为本发明实施例3提供的一种显示面板的俯视结构示意图;
图11为本发明实施例4提供的一种显示面板的俯视结构示意图;
图12为沿图11中A1-A2方向的剖面结构示意图。
附图标记:
1-公共电极;10-公共电极框;11-第一连接电极;12-第二连接电极;2-栅线;3-像素电极;30-狭缝;4-数据线;51-第一基板;52-第二基板;6-黑矩阵;60-镂空区域;7-钝化层;8-彩膜块;9-平坦层;91-栅极绝缘层;92-第一绝缘层。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
需要指出的是,除非另有定义,本发明实施例中所使用的所有术语(包括技术和科学术语)具有与本发明所属领域的普通技术人员共同理解的相同含义。还应当理解,诸如在通常字典里定义的那些术语应当被解释为具有与它们在相关技术的上下文中的含义相一致的含义,而不应用理想化或极度形式化的意义来解释,除非这里明确地这样定义。
例如,本发明专利申请说明书以及权利要求书中所使用的术语“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性,仅是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同,而不排除其他元件或者物件。“上/上方”、“下/下方”、“一侧”以及“另一侧”等指示的方位或位置关系的术语为基于附图所示的方位或位置关系,仅是为了便于说明本发明的技术方案的简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。
本发明实施例提供一种显示面板,包括:衬底基板、设置在衬底基板上的多条栅线与数据线;栅线与数据线交叉限定出多个像素区域;上述显示面板还包括:设置在每个像素区域内的像素电极;该显示面板还包括:与像素电极相对设置的公共电极;其中,公共电极在衬底基板上的正投影与栅线在衬底基板上的正投影无重叠;和/或,公共电极在衬底基板上的正投影与数据线在衬底基板上的正投影无重叠。
需要说明的是,上述显示面板当然还包括有形成在上述衬底基板上的位于栅线与数据线的交叉处的薄膜晶体管(Thin Film Transistor,简称为TFT)。栅线连接TFT的栅极,以控制该TFT的导通或关闭;各像素区内的像素电极通过对应的TFT连接数据线,以进行显示。
基于此,本发明实施例通过对公共电极的图形进行调整,使其不与相邻的栅线重叠,或者不与相邻的数据线重叠,或者与栅线、数据线均不重叠,从而可降低栅线和/或数据线由于存在寄生电容而对信号传输造成的影响,提高了显示质量。
由于栅线与数据线交叉限定出的多个像素区域通常呈阵列排布,即有多行像素区域和多列像素区域。因此,在上述基础上进一步的,上述公共电极的图形与设置方式具体可以包括但不限于以下三种方式:
方式一
如图1所示,公共电极1呈条状设置在相邻两条栅线2之间,且一条公共电极1对应于一行像素电极3。
即公共电极1与栅线2不重叠,以降低栅线2上产生的寄生电容。
方式二
如图2所示,公共电极1呈条状设置在相邻两条数据线4之间,且一条公共电极1对应于一列像素电极3。
即公共电极1与数据线4不重叠,以降低数据线4上产生的寄生电容。
方式三
如图3所示,公共电极1呈方块状设置在每个像素区域内,即公共电极1与栅线2、数据线4均不重叠。由于每块公共电极1呈独立的方块状,为使相邻公共电极1能够连接到一起以接收公共信号。上述显示面板还包括:多个第一连接电极11和多个第二连接电极12;其中,每个公共电极1与相邻行的相对的另一个公共电极1通过第一连接电极11电性连通;每个公共电极1与相邻列的相对的另一个公共电极1通过第二连接电极12电性连通。
由于第一连接电极11、第二连接电极12的作用仅为连接相邻的公共电极1,其宽度可以制作地较窄,以降低第一连接电极11与栅线2的重叠面积、第二连接电极12与数据线4的重叠面积,从而降低栅线2和数据线4上产生的寄生电容。
针对本发明实施例进一步提供的上述三种公共电极的设计方式,需要说明的是:
第一、在本发明中提到的关于位置和方向的术语,诸如“行/行方向”、“列/列方向”等,均是基于相应附图的纸面正面观察时所指的方向。上述关于位置和方向的术语仅仅表示附图所示情况下的相对位置关系,这只是出于说明的目的而给出的,并非意在限制本发明的范围。例如在某些情况下,涉及“行方向”的实施例可以在“列方向”的情况下实施等等,相反亦如此。并且,将本发明所述方案进行90度旋转或镜像后亦属本发明的保护范畴。
第二、上述图1至图3中涉及的公共电极1、第一连接电极11、第二连接电极12、栅线2、像素电极3以及数据线4的数量仅为示意,本发明实施例对上述各结构的具体数量不作限定,可根据显示面板的尺寸需要灵活设置。
第三、在上述图1和图2中,仅以像素电极3位于公共电极1之上,即公共电极1位于像素电极3与衬底基板之间为例进行说明;像素电极3与公共电极1的上下相对位置也可对调,即相对于衬底基板而言,公共电极1位于像素电极3之上,具体结构可灵活设计。
进一步的,针对上述方式三,第一连接电极11的宽度具体设置为,第一连接电极11沿行方向的宽度小于靠近的像素电极沿行方向的长度的1/4;和/或,第二连接电极12的宽度具体设置为,第二连接电极12沿列方向的宽度小于靠近的像素电极沿列方向的长度的1/4。
在上述基础上,考虑到在上述显示面板进行显示时,各公共电极上均施加同一信号,即为公共信号,通常为±5V。为了方便向各公共电极提供同一公共信号,因此本发明实施例进一步优选为,针对上述方式一与上述方式二,显示面板划分有显示区域;公共电极至少位于显示区域内,呈条状的公共电极的两端还可以延伸到显示区域外;上述显示面板还包括,与公共电极同层设置的公共电极框;公共电极框位于显示区域之外,并与每个公共电极连接。
具体为,针对上述方式一,沿行方向间隔设置且呈条状的各公共电极1与公共电极框构成一个公共电极层,该公共电极层的平面结构如图4所示,其中,公共电极框10位于显示区域外,呈条状的每个公共电极1的两端(即图中的左右两侧)连接到公共电极框10。
这里,条状的公共电极1与公共电极框10可以为一次形成的一体结构,其中镂空的区域即对应于栅线2,即公共电极1设置在相邻两条栅线2之间,不与相邻的两栅线2重叠。
具体为,针对上述方式二,沿列方向间隔设置且呈条状的各公共电极1与公共电极框构成一个公共电极层,该公共电极层的平面结构如图5所示,其中,公共电极框10位于显示区域外,呈条状的每个公共电极1的两端(即图中的上下两侧)连接到公共电极框10。
这里,条状的公共电极1与公共电极框10可以为一次形成的一体结构,其中镂空的区域即对应于数据线4,即公共电极1设置在相邻两条数据线4之间,不与相邻的两数据线4重叠。
针对上述方式三,显示面板划分有显示区域;每个独立的呈块状的公共电极1位于显示区域内;上述显示面板还包括,与公共电极同层设置的公共电极框;公共电极框位于显示区域之外;第一行公共电极1、最后一行公共电极1通过前述的第一连接电极11与公共电极框连接;第一列公共电极1、最后一列公共电极1通过前述的第二连接电极12与公共电极框连接。
具体的,沿行、列方向间隔设置且呈块状的各公共电极1、前述的第一连接电极11、第二连接电极12以及公共电极框构成一个公共电极层,该公共电极层的平面结构如图6所示,其中,公共电极框10位于显示区域外,位于行、列方向上最外侧的呈块状的公共电极1通过相应的第一连接电极11、第二连接电极12连接到公共电极框10,从而使得每个呈块状的公共电极1与公共电极框10电性连通。
这里,公共电极1、第一连接电极11、第二连接电极12以及公共电极框10可以为一次形成的一体结构,公共电极1与栅线2、数据线4均不重叠。
在上述基础上,至少设置有栅线、数据线、TFT以及像素电极的上述衬底基板具体可为COA基板(color filter on array)即集成有彩膜层的阵列基板。相应的,上述显示面板还包括:黑矩阵(Black Matrix,简称为BM)和彩膜层;其中,黑矩阵位于衬底基板与像素电极所在的层之间;黑矩阵包括与像素电极一一对应的镂空区域;彩膜层包括与像素电极一一对应的彩膜块;每个彩膜块至少有部分区域位于镂空区域,即位于靠近像素电极下方。
即,每个彩膜块可以仅设置在黑矩阵的镂空区域,也可以除了设置在镂空区域之外,其边缘可搭接至黑矩阵的镂空区域边缘,以降低彩膜块与黑矩阵的镂空区域处的漏光。
这样一来,通过将BM和彩膜层设置在阵列基板上,可以提高彩膜块与对应的像素区域的对位精度,降低对位偏差,有利于提高开口率;同时,BM还可以遮挡住公共电极的边缘和像素电极的边缘之间的电场造成的漏光。
在上述基础上,进一步的,上述显示面板还还包括:与衬底基板相对设置的对置基板;其中,栅线、数据线和像素电极均设置在衬底基板朝向对置基板的一侧;公共电极设置在对置基板朝向衬底基板的一侧。即形成的显示面板具体为TN型结构。
或者,上述栅线、数据线、像素电极和公共电极也可以均设置在衬底基板上;其中,公共电极位于衬底基板与像素电极之间,且像素电极上设置有狭缝;或者,像素电极位于衬底基板与公共电极之间,且公共电极上设置有狭缝。
即形成的显示面板具体为FFS(Fringing Field Switch,边缘场模式)型结构。其中,相对于衬底基板,像素电极与公共电极二者中相对位于上方的一者上还设置有狭缝,以提高显示面板的背光透过率。
下图提供四个具体实施例,用于详细描述上述的显示面板。
实施例1
本发明实施例1提供一种显示面板,具体应用于TN型的液晶器件。
如图7所示,在第一基板51(即衬底基板)上设置栅线2、数据线4,在栅线2与数据线4的交叉处设有TFT,像素电极3通过TFT连接数据线4,栅线2连接TFT(图中即标记为TFT)的栅极,以控制该TFT的导通或关闭。
其中,如图8所示,公共电极1设置在与所述第一基板51相对设置的第二基板52(即对置基板)上,液晶层(相应的剖视图中标记为LC)设置在上述两个基板之间。公共电极1呈条状,对于每行像素电极3,都有一个呈条状的公共电极1与之对应,该呈条状的公共电极1位于相邻的两条栅线2之间,不与相邻的两栅线2重叠。
参考图4所示,公共电极层的平面结构包括呈条状的公共电极1和公共电极框10。其中,公共电极框10位于显示区域外,呈条状的每个公共电极1连接到公共电极框10。
需要说明的是,由于剖面图剖视方向的限定,上述图7中的一些诸如数据线4、TFT的结构在图8中未能体现出,相应标号仅在图7中示意出。
实施例2
本发明实施例2提供一种显示面板,具体应用于TN型的液晶器件。
如图9所示,在第一基板(即衬底基板)上设置栅线2、数据线4,在栅线2与数据线4的交叉处设有TFT(图中即标记为TFT),像素电极3通过TFT连接数据线4,栅线2连接TFT的栅极,以控制该TFT的导通或关闭。
其中,公共电极1设置在与所述第一基板相对设置的第二基板(即对置基板)上,液晶层设置在上述两个基板之间,剖视图结构可参考上述实施例1的附图8,此处不再赘述。公共电极1呈条状,对于每列像素电极3,都有一个呈条状的公共电极1与之对应,该呈条状的公共电极1位于相邻的两条数据线4之间,不与相邻的两数据线4重叠。
参考图5所示,公共电极层的平面结构包括呈条状的公共电极1和公共电极框10。其中,公共电极框10位于显示区域外,呈条状的每个公共电极1连接到公共电极框10。
实施例3
本发明实施例3提供一种显示面板,具体应用于TN型的液晶器件。
如图10所示,在第一基板(即衬底基板)上设置栅线2、数据线4,在栅线2与数据线4的交叉处设有TFT(图中即标记为TFT),像素电极3通过TFT连接数据线4,栅线2连接TFT的栅极,以控制该TFT的导通或关闭。
其中,公共电极1设置在与所述第一基板相对设置的第二基板(即对置基板)上,液晶层设置在上述两个基板之间,剖视图结构可参考上述实施例1的附图8,此处不再赘述。参考图6所示,公共电极层的平面结构包括呈条状的公共电极1、第一连接电极11、第二连接电极12以及公共电极框10。其中,公共电极框10位于显示区域外,位于行、列方向上最外侧的呈块状的公共电极1通过相应的第一连接电极11、第二连接电极12连接到公共电极框10。
第一连接电极11与栅线2、数据线4有重叠,第二连接电极12与栅线2、数据线4有重叠,但重叠的面积很小,第一连接电极11、第二连接电极12的宽度小于其连接的像素电极的边的长度的1/4。
实施例4
本发明实施例4提供一种显示面板,具体应用于FFS型的液晶器件。
如图11和图12所示,上述栅线2、数据线4、TFT(图中即标记为TFT)、像素电极3和公共电极1等结构均设置在第一基板51(即衬底基板)上,从而形成阵列基板。与第一基板51相对设置的第二基板52用于维持液晶盒厚,液晶层(相应的剖视图中标记为LC)设置在上述两个基板之间。
其中,像素电极3上设置有狭缝30,像素电极3位于公共电极1上方,二者之间设置有第一绝缘层92。公共电极1具体呈条状,位于两条相邻的栅线2之间,不与两栅线2重叠。
在上述实施例4中,还可以将公共电极1设置在像素电极3上方,相应地在公共电极1上设置狭缝。
参考图7至图12所示,上述各实施例提供的显示面板中还包括设置在衬底基板上的黑矩阵6和彩膜层;其中,黑矩阵6和彩膜层均设置在钝化层7上;黑矩阵6包括与像素电极3一一对应的镂空区域60;彩膜层包括与像素电极3一一对应的彩膜块8;每个彩膜块8位于镂空区域60并搭接至黑矩阵6的镂空区域边缘。像素电极3与黑矩阵6、彩膜层之间通过平坦层9相隔离开。
在上述各实施例中,包括有栅线、栅极以及栅线走线的图案层、包括有数据线、源极、漏极以及数据线走线的图案层可以采用Cu(铜)、Al(铝)、Mo(钼)、Ti(钛)、Cr(铬)以及W(钨)等金属单质材料构成,也可以采用这些材料的合金构成。上述各图案层的具体结构可以是单层结构,也可以采用多层结构,如层叠设计的Mo\Al\Mo、Ti\Cu\Ti以及Mo\Ti\Cu等结构。
TFT具体可以为非晶硅TFT、多晶硅TFT、或氧化物半导体TFT,其结构可以为顶栅型或底栅型。
其中,在一些TFT结构中,栅极可以为栅线2的一部分(即没有从栅线上延伸出的独立的栅极图案);源极可以为数据线4的一部分(即没有从数据线上延伸出的独立的源极图案),本发明实施例对涉及TFT具体结构不作限定,可沿用现有技术中的各种TFT结构,或根据上述显示面板的具体结构要求灵活选择TFT的种类和/或结构。
栅极绝缘层91可以采用氮化硅或氧化硅材料构成,其具体结构可以是单层结构,也可以是多层结构,例如层叠设计的氧化硅\氮化硅。
覆盖TFT的钝化层7可以采用氮化硅或氧化硅材料构成,其结构可以是单层结构,也可以是多层结构,例如层叠设计的氧化硅\氮化硅。
用于为像素电极提供一个平坦衬底的平坦层9可以采用树脂材料构成。
像素电极3具体可采用ITO(Indium Tin Oxide、氧化铟锡)、IZO(Indium ZincOxide、氧化铟锌)以及FTO(Fluorine-Doped Tin Oxide、氟掺杂二氧化锡)等透明金属氧化物导电材料构成。
公共电极1也可采用ITO、IZO以及FTO等透明金属氧化物导电材料构成。
在上述基础上,本发明实施例还提供了一种显示装置,包括有上述的显示面板。上述显示装置具体为液晶显示装置,可以为液晶显示器、液晶电视、数码相框、手机、平板电脑、数码相框、导航仪等具有任何显示功能的产品或者部件。
以上所述,仅为本发明的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本发明的保护范围之内。因此,本发明的保护范围应以所述权利要求的保护范围为准。
Claims (11)
1.一种显示面板,包括:衬底基板、设置在所述衬底基板上的多条栅线与数据线;所述栅线与所述数据线交叉限定出多个像素区域;所述显示面板还包括:设置在每个所述像素区域内的像素电极;其特征在于,所述显示面板还包括:与所述像素电极相对设置的公共电极;其中,所述公共电极在所述衬底基板上的正投影与所述栅线在所述衬底基板上的正投影无重叠;和/或,所述公共电极在所述衬底基板上的正投影与所述数据线在所述衬底基板上的正投影无重叠。
2.根据权利要求1所述的显示面板,其特征在于,
所述多个像素区域呈阵列排布;
所述公共电极呈条状设置在相邻两条所述栅线之间,且一条所述公共电极对应于一行所述像素电极。
3.根据权利要求1所述的显示面板,其特征在于,
所述多个像素区域呈阵列排布;
所述公共电极呈条状设置在相邻两条所述数据线之间,且一条所述公共电极对应于一列所述像素电极。
4.根据权利要求1所述的显示面板,其特征在于,
所述多个像素区域呈阵列排布;
所述公共电极呈方块状设置在每个所述像素区域内;
所述显示面板还包括:多个第一连接电极和多个第二连接电极;
其中,每个所述公共电极与相邻行的相对的另一个所述公共电极通过所述第一连接电极电性连通;每个所述公共电极与相邻列的相对的另一个所述公共电极通过所述第二连接电极电性连通。
5.根据权利要求4所述的显示面板,其特征在于,
所述第一连接电极沿行方向的宽度小于靠近的所述像素电极沿所述行方向的长度的1/4;
和/或,
所述第二连接电极沿列方向的宽度小于靠近的所述像素电极沿所述列方向的长度的1/4。
6.根据权利要求4所述的显示面板,其特征在于,所述显示面板划分有显示区域;所述公共电极位于所述显示区域内;
所述显示面板还包括,与所述公共电极同层设置的公共电极框;所述公共电极框位于所述显示区域之外;第一行所述公共电极、最后一行所述公共电极通过所述第一连接电极与所述公共电极框连接;第一列所述公共电极、最后一列所述公共电极通过所述第二连接电极与所述公共电极框连接。
7.根据权利要求2或3所述的显示面板,其特征在于,所述显示面板划分有显示区域;所述公共电极至少位于所述显示区域内;
所述显示面板还包括,与所述公共电极同层设置的公共电极框;所述公共电极框位于所述显示区域之外,并与每个所述公共电极连接。
8.根据权利要求1所述的显示面板,其特征在于,所述显示面板还包括:黑矩阵和彩膜层;
其中,所述黑矩阵位于所述衬底基板与所述像素电极所在的层之间;所述黑矩阵包括与所述像素电极一一对应的镂空区域;
所述彩膜层包括与所述像素电极一一对应的彩膜块;每个所述彩膜块至少有部分区域位于所述镂空区域。
9.根据权利要求1所述的显示面板,其特征在于,所述显示面板还包括:与所述衬底基板相对设置的对置基板;
所述栅线、所述数据线和所述像素电极均设置在所述衬底基板朝向所述对置基板的一侧;
所述公共电极设置在所述对置基板朝向所述衬底基板的一侧。
10.根据权利要求1所述的显示面板,其特征在于,所述栅线、所述数据线、所述像素电极和所述公共电极均设置在所述衬底基板上;
其中,所述公共电极位于所述衬底基板与所述像素电极之间,且所述像素电极上设置有狭缝;或者,所述像素电极位于所述衬底基板与所述公共电极之间,且所述公共电极上设置有狭缝。
11.一种显示装置,其特征在于,包括如权利要求1至10任一项所述的显示面板。
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US10825884B2 (en) | 2018-08-03 | 2020-11-03 | Shanghai Tianma AM-OLED Co., Ltd. | Display panel and display device having anode not overlapping with gate lines and/or light-emitting control signal lines |
WO2021184186A1 (zh) * | 2020-03-17 | 2021-09-23 | 京东方科技集团股份有限公司 | 阵列基板及显示装置 |
WO2023225856A1 (zh) * | 2022-05-24 | 2023-11-30 | 京东方科技集团股份有限公司 | 透明显示面板及显示装置 |
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US20190064607A1 (en) | 2019-02-28 |
US10627680B2 (en) | 2020-04-21 |
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