CN107358976A - The programmed method and nonvolatile memory of a kind of nonvolatile memory - Google Patents
The programmed method and nonvolatile memory of a kind of nonvolatile memory Download PDFInfo
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- CN107358976A CN107358976A CN201610305638.5A CN201610305638A CN107358976A CN 107358976 A CN107358976 A CN 107358976A CN 201610305638 A CN201610305638 A CN 201610305638A CN 107358976 A CN107358976 A CN 107358976A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
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Abstract
The invention discloses a kind of programmed method of nonvolatile memory and nonvolatile memory, wherein, the programmed method includes：Control unit receives the Current Temperatures information transmitted by temperature monitoring；Control unit determines the current program voltage of the page to be programmed based on the Current Temperatures information；Control unit is based on the current program voltage and is programmed operation to the page to be programmed.Utilize the programmed method, the program voltage of page to be programmed can be adjusted in real time based on ambient temperature information, while programming operation correctness is ensured, shorten programming time, reduce invalid programming loss, and then programming non-volatile memory efficiency is improved, and improve the purpose that the stability of nonvolatile memory and reliability are kept.
Description
Technical field
The present invention relates to hardware of memory device technical field, more particularly to a kind of programming of nonvolatile memory
Method and nonvolatile memory.
Background technology
Nonvolatile memory (Non-volatile Memory), it is internal using non-linear macroelement pattern, tool
There is the advantages that capacity is big, and rewriting speed is fast, suitable for the storage of mass data.It is widely used in embedded production
In product, such as digital camera, MP3 walkmans memory card, the USB flash disk of compact.Fig. 1 is existing non-easy
One easy structure figure of the property lost memory, as shown in Figure 1, the nonvolatile memory is by memory cell battle array
Row 11, wordline selecting unit 12, bit line selecting unit 13, voltage pump 14 and control unit 15 form,
Wherein, memory cell array 11 is made up of multiple memory cell blocks, and each memory cell block is single by multiple storages
Metapage forms, and each memory cell page connects to be formed based on each memory cell wordline with bit line again；Control is single
Member 15 is the control core of whole nonvolatile memory, single with wordline selecting unit 12, bit line selection respectively
Member 13 and voltage pump 14 connect, and can control wordline selecting unit 12 and the realization pair of bit line selecting unit 13
The storage address of memory cell array 11 is chosen, and also controllable voltage pump 14 applies to memory cell array 11
Voltage, and control applied voltage swing.
In the nonvolatile memory, a memory cell can see a metal oxide semiconductcor field effect as
Transistor (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET).Fig. 2
It is a kind of common MOSFET structure figure, including grid 20, source electrode 21, drain electrode 22, P-type silicon are partly led
Body substrate 23, P-well 24 and tunnel oxide 25.Its mutual connection is：P-type silicon Semiconductor substrate
23 diffuse out two N-type regions, and P-well 24 is formed between P-type silicon Semiconductor substrate 23 and two N-type regions,
One layer of tunnel oxide 24 of the top of P-type silicon Semiconductor substrate 23 covering, finally with corrosion above N-type region
Method makes two holes, and three electrodes are made on the insulating layer and in two holes respectively with the method for metallization：
Grid 20, source electrode 21 and drain electrode 22, source electrode 21 and drain electrode 22 correspond to two N-type regions and grid 20 respectively
For the wordline of memory cell, drain electrode 22 is the bit line of memory cell.
In the prior art, when the memory cell to nonvolatile memory is programmed operation, in grid 20
Apply high pressure and apply low pressure at the end of drain 22, it is poor to be consequently formed program voltage so that be in source class 21 floating
In dynamic flow of charge grid 20, and then state of memory cells is set to be 0.Usually, when being programmed operation,
Used program voltage is unified to be set, but the program capability of nonvolatile memory can be with the change of temperature
Change and change, when temperature raises and program voltage keeps constant, its program capability is just corresponding to be reduced, even
The state of program fail is constantly in, increases the working time of programming operation, efficiency is removed so as to influence programming,
And then reduce the reliability and stability of nonvolatile memory.
The content of the invention
In view of this, the embodiment of the present invention provides the programmed method of a kind of nonvolatile memory and non-volatile
Memory, to improve reliability, high efficiency and the stability of programming non-volatile memory operation.
On the one hand, the embodiments of the invention provide a kind of nonvolatile memory, including：Memory cell array,
Wordline selecting unit, bit line selecting unit and control unit, in addition to：Temperature monitoring,
Wherein, the temperature monitoring, is connected with described control unit, for monitoring nonvolatile memory
The temperature of local environment, and to described control unit transmit local environment temperature information.
Further, the temperature monitoring is connected by winding displacement with the winding displacement interface in described control unit.
Further, the temperature monitoring is temperature sensor.
On the other hand, the embodiments of the invention provide a kind of programmed method of nonvolatile memory, including：
Control unit receives the Current Temperatures information transmitted by temperature monitoring；
Control unit determines the current program voltage of the page to be programmed based on the Current Temperatures information；
Control unit is based on the current program voltage and is programmed operation to the page to be programmed.
Further, before the temperature information transmitted by the temperature monitoring is received in control unit, also wrap
Include：Turn based on the current temperature value of temperature monitoring monitoring external environment, and by the current temperature value
It is changed to the Current Temperatures information of binary coded form.
Further, the current volume of the page to be programmed is determined based on the Current Temperatures information in control unit
Before journey voltage, in addition to：Binary group information table is set in described control unit, wherein, the binary
Group information table includes temperature information and the corresponding relation of program voltage difference.
Further, described control unit determines the current of the page to be programmed based on the Current Temperatures information
Program voltage, specifically include：Control unit determines the Current Temperatures information in the binary group information table
Corresponding program voltage is poor, and it is poor to be designated as current program voltage；Control unit is based on the current program voltage
Difference determines the current program voltage applied to the memory cell in the page to be programmed.
Further, described control unit is programmed based on the current program voltage to the page to be programmed
Operation, is specifically included：The memory cell of the page to be programmed is verified by control unit, judges institute
State whether memory cell in page to be programmed reaches programming state；If the memory cell is not reaching to programming shape
State, then the current program voltage is applied to the memory cell by control unit.
Further, the programming state refers to state of memory cells as 0.
Further, in addition to：Based on control unit control word line options unit and bit line selecting unit, choosing
The memory page to be programmed is taken, is designated as page to be programmed.
The embodiments of the invention provide a kind of programmed method of nonvolatile memory and nonvolatile memory.
The programmed method of the present invention adds compared with existing programmed method and monitors Current Temperatures based on temperature monitoring
The operation of information, and current program voltage is determined based on the temperature information monitored, it is hereby based on currently compiling
Journey voltage treats programmed page and is programmed operation.The programmed method can be adjusted in real time based on ambient temperature information
The program voltage of page to be programmed, while programming operation correctness is ensured, programming time is shortened, reduced
Invalid programming loss, and then programming non-volatile memory efficiency is improved, and improve non-volatile
The purpose that the stability and reliability of memory are kept.
Brief description of the drawings
Fig. 1 is the easy structure figure of existing nonvolatile memory；
Fig. 2 is a kind of metal oxide semiconductcor field effect crystal as memory cell in nonvolatile memory
The structure chart of pipe；
Fig. 3 is a kind of easy structure figure for nonvolatile memory that the embodiment of the present invention one provides；
Fig. 4 is a kind of flow signal of the programmed method for nonvolatile memory that the embodiment of the present invention two provides
Figure；
Fig. 5 is a kind of flow signal of the programmed method for nonvolatile memory that the embodiment of the present invention three provides
Figure.
Embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this
The specific embodiment of place description is used only for explaining the present invention, rather than limitation of the invention.Also need in addition
It is noted that for the ease of description, illustrate only part related to the present invention in accompanying drawing and it is not all in
Hold.
Embodiment one
A kind of easy structure figure for nonvolatile memory that Fig. 3 provides for the embodiment of the present invention one, such as Fig. 3
It is shown, nonvolatile memory provided in an embodiment of the present invention, except including memory cell array 31, wordline choosing
Select outside unit 32, bit line selecting unit 33, voltage pump 34 and control unit 35, in addition to：Temperature
Spend monitor 36.
Wherein, temperature monitoring 36, it is connected with control unit 35, for monitoring residing for nonvolatile memory
The temperature of environment, and to control unit 35 transmit local environment temperature information.
In the present embodiment, before the nonvolatile memory based on the present invention carries out various operations, first
The monitoring of ambient temperature can be carried out based on temperature monitoring 36, and can be incited somebody to action by temperature monitoring 36
The temperature information monitored is transferred to control unit 35；So that control unit 35 is based on the temperature obtained
The output voltage of Information Regulating voltage pump 34, to change in real time nonvolatile memory progress various operations when institute
The voltage needed.
Further, temperature monitoring 36 is connected by winding displacement with the winding displacement interface in control unit 35.Tool
Body, in nonvolatile memory of the invention, the connection between each unit device is all by winding displacement and row
What the docking of line interface was realized, thus, the increased temperature monitoring 36 of institute is also to pass through winding displacement and control unit
Winding displacement interface on 35 realizes connection.
Further, temperature monitoring 36 is temperature sensor.In the present embodiment, temperature monitoring 36
It is mainly used in the extraneous temperature change of monitoring, is preferably temperature sensor by temperature monitoring 36 therefore.
A kind of nonvolatile memory that the embodiment of the present invention one provides, with existing nonvolatile memory phase
Than adding a temperature monitoring being connected with control unit in its structure.Non-volatile deposited using this
Reservoir, temperature monitoring can be primarily based on residing ambient temperature is monitored, and passed through and supervised
The temperature information of survey regulates and controls the output voltage of voltage pump by control unit, realizes to nonvolatile memory
The real-time adjustment of voltage needed for work, thus contracted while non-volatile memory operation accuracy is not influenceed
The short working time, and then improve the stability of nonvolatile memory and the purpose of reliability.
Embodiment two
Fig. 4 is a kind of flow signal of the programmed method for nonvolatile memory that the embodiment of the present invention two provides
Figure.This method is performed by nonvolatile memory, is that one kind of existing programmed method is improved, such as Fig. 4 institutes
Show, this method specifically includes following operation：
S401, control unit receive the Current Temperatures information transmitted by temperature monitoring.
In the present embodiment, described control unit and temperature sensor are that the embodiment of the present invention three is carried
The structure devices of nonvolatile memory.Wherein, described control unit is the core of the nonvolatile memory
Heart unit, controlled to adjust accordingly for the various operations to the nonvolatile memory.In general,
The common operation that the nonvolatile memory is carried out has：Erasing operation, programming operation and read operation.
Exemplary, the erasing operation can be regarded as the state of memory cell in nonvolatile memory by " 0 "
It is changed into the operation of " 1 "；The programming operation can be regarded as the state of memory cell in nonvolatile memory
It is changed into the operation of " 0 " from " 1 "；The read operation can be regarded as to the storage list in nonvolatile memory
The read operation that first state is carried out, above-mentioned various operations are typically different by applying to nonvolatile memory
Voltage is realized.The temperature monitoring is used for the temperature value for monitoring nonvolatile memory local environment, and
Monitored temperature information is transmitted to described control unit.
In the present embodiment, the Current Temperatures information can specifically refer to is obtained by temperature monitoring monitoring local environment
The information of the current temperature value obtained.Specifically, the Current Temperatures information can be transmitted by temperature monitoring,
And received and recognized by described control unit.
S402, control unit determine the current program voltage of the page to be programmed based on the Current Temperatures information.
In the present embodiment, the page to be programmed specifically can be regarded as needing to be programmed in memory cell array
One memory cell page (memory page) of operation.The current program voltage can specifically refer to currently to be treated to described
Programmed page is programmed the program voltage to be applied during operation.
In the present embodiment, based on the Current Temperatures information received, it may be determined that the page to be programmed is worked as
Preceding program voltage.Specifically, predetermined temperature information and the relation mapping table of program voltage can be passed through
To determine the current program voltage corresponding to Current Temperatures information, i.e. can be looked into first in relation mapping table
Inquiry whether there is Current Temperatures information, and when the Current Temperatures information be present, determine the Current Temperatures
Current program voltage corresponding to information.
In the present embodiment, the temperature information and volume included in the relation mapping table of temperature information and program voltage
The corresponding relation of journey voltage can be based on different temperature information in history programming operation and corresponding programming
Effect preferable program voltage information determines.
S403, control unit are based on the current program voltage and are programmed operation to the page to be programmed.
In the present embodiment, after current program voltage is determined, control unit can control non-volatile deposit
Voltage pump in reservoir applies fixed current program voltage to the page to be programmed, thus waits to compile to described
Journey page is programmed operation so that the state of memory cells in the page to be programmed can be changed into " 0 " from " 1 ".
In general, when treating programmed page and being programmed operation, the voltage pump in the nonvolatile memory
Apply positive voltage to the gate terminal of memory cell, apply negative voltage to drain electrode end, thus formed between the ends
Voltage difference so that the fluctuating charge in cell source moves into grid, so that in memory cell grid
Threshold voltage higher than setting voltage, and then state of memory cells is changed into 0.
A kind of programmed method for nonvolatile memory that the embodiment of the present invention two provides, temperature prison is received first
The Current Temperatures information of device transmission is surveyed, is then based on the current programming electricity that Current Temperatures information determines page to be programmed
Pressure, finally treats programmed page according to the current program voltage of determination and is programmed operation.Using the programmed method,
Realize program voltage with the change of ambient temperature to change, also protected while programming operation correctness is ensured
Having demonstrate,proved the working time of programming operation can complete within effective time, which thereby enhance nonvolatile memory
Programming efficiency, so as to reach the purpose of the stability and reliability that improve nonvolatile memory.
Embodiment three
Fig. 5 is a kind of flow signal of the programmed method for nonvolatile memory that the embodiment of the present invention three provides
Figure.The embodiment of the present invention is optimized based on above-described embodiment two, in the present embodiment, in " control
Unit receives the temperature information transmitted by temperature monitoring " before, also optimization includes：Based on the temperature
Monitor monitors the current temperature value of external environment, and the current temperature value is converted into binary coding shape
The Current Temperatures information of formula.
Further, " control unit determines the current of the page to be programmed based on the Current Temperatures information
Before program voltage ", also optimization includes：Binary group information table is set in described control unit, wherein,
The binary group information table includes temperature information and the corresponding relation of program voltage difference.
Further, the embodiment of the present invention will " control unit be based on treating described in Current Temperatures information determination
The current program voltage of programmed page " is specifically optimized for：Control unit determines the Current Temperatures information described
Corresponding program voltage is poor in binary group information table, and it is poor to be designated as current program voltage；Control unit is based on institute
State the current program voltage that current program voltage difference determines to apply the memory cell in the page to be programmed.
Further, the embodiment of the present invention is also by " control unit is based on the current program voltage and treated to described
Programmed page is programmed operation " specifically it is optimized for：Memory cell by control unit to the page to be programmed
Verified, judge whether memory cell reaches programming state in the page to be programmed；If the storage is single
Member is not reaching to programming state, then applies the current program voltage to the memory cell by control unit.
As shown in figure 5, a kind of programmed method for nonvolatile memory that the embodiment of the present invention three provides, tool
Body includes following operation：
S501, the current temperature value based on temperature monitoring monitoring external environment, and will be described current warm
Angle value is converted to the Current Temperatures information of binary coded form.
In the present embodiment, external environment residing for nonvolatile memory can be monitored based on temperature monitoring
Current temperature value, wherein, the current temperature value is extraneous actual temp value.In addition, based on temperature
Monitor transmits the information of current temperature value before, it is necessary to by the current temperature value by numeral to control unit
Signal is converted to analog signal, forms the Current Temperatures information that can be transmitted.
In the present embodiment, it can be changed by binary coding and realize that the current temperature value is believed to Current Temperatures
The conversion of breath, its process are：The code length of corresponding binary coded value is set for temperature value, is then based on
The temperature value of reality is converted to binary coded value by binary coding, and finally obtain the temperature value two enter
Encoded radio processed, realize the binary coding conversion of temperature value.It follows that the Current Temperatures information is institute
State the binary coded value of current temperature value.
In general, the code length of binary coded value may be configured as 7, and can be arranged to accord with by highest order
Number position (0 represents just, and 1 represents negative).It is exemplary, -20 DEG C after binary coding is changed, it is resulting
Binary coded value can represent and for 1010100, wherein, the 1 of highest order represents that temperature is negative；And for example, it is warm
During 30 DEG C of angle value, after binary coding is changed, resulting binary coded value can represent and for 0011110,
Wherein, the 0 of highest order represents temperature for just.
S502, control unit receive the Current Temperatures information transmitted by temperature monitoring.
S503, binary group information table is set in described control unit, wherein, in the binary group information table
Corresponding relation including temperature information and program voltage difference.
In the present embodiment, the binary group information table can specifically regard a mapping table as, described two
In tuple information table, temperature information and the mapping relations of program voltage difference are contained.It is specifically, single in control
Member determines currently after receiving the Current Temperatures information of temperature monitoring transmission, it is necessary to be based on Current Temperatures information
Program voltage.Usually, the determination to the current program voltage is needed based on the letter in binary group information table
Content is ceased to determine.Therefore, temperature is included, it is necessary to set in advance before program voltage is adjusted based on temperature information
Information and the binary group information table of program voltage difference corresponding relation.
In the present embodiment, the program voltage difference, which can specifically refer to, is applied in the page to be programmed each storage list
The high voltage of first gate terminal, the voltage difference that the low-voltage with being applied to drain electrode end is formed.Need what is illustrated
Be treat program voltage in programmed page adjustment actually can be regarded as to the gate terminal that is applied to memory cell with
The adjustment of drain electrode end both end voltage difference, its voltage difference are bigger, so that it may show the volume applied to memory cell
Journey voltage is higher.
S504, control unit determine the Current Temperatures information corresponding programming in the binary group information table
Voltage difference, and it is poor to be designated as current program voltage.
In the present embodiment, after setting binary group information table based on S503, control unit first can be in two tuples
Search whether acquired Current Temperatures information be present in information table, and after it is determined that Current Temperatures information be present,
Determine that the Current Temperatures information corresponding program voltage in binary group information table is poor, then will determine
It is poor that program voltage difference is designated as current program voltage.
S505, control unit are determined to the storage list in the page to be programmed based on the current program voltage difference
The current program voltage that member applies.
In the present embodiment, the current program voltage can specifically refer to voltage pump and be currently needed for described to be programmed
The program voltage that the memory cell of page applies.After current program voltage difference is determined, described work as can be based on
Preceding program voltage difference is electric to determine the current programming that memory cell of the voltage pump into the page to be programmed is applied
Pressure.
Specifically, the current voltage that can be applied by adjusting voltage pump to the gate terminal of memory cell, to protect
It is poor for fixed current program voltage that card grid and source electrode both ends form program voltage difference；It can also pass through
The current voltage that voltage pump applies to the gate terminal of memory cell is adjusted, to ensure grid and source electrode both ends institute shape
It is poor for fixed current program voltage into program voltage difference；Further, it is also possible to voltage pump is adjusted respectively to depositing
The gate terminal of storage unit and the current voltage of drain electrode end, as long as memory cell grid and drain electrode two can be ensured
The program voltage difference at end is current program voltage difference.
S506, by control unit the memory cell of the page to be programmed is verified, wait to compile described in judgement
Whether memory cell reaches programming state in journey page.
In the present embodiment, it is first when being programmed operation to the page to be programmed based on current program voltage
Control unit is first passed through to verify the memory cell of the page to be programmed.Thus the page to be programmed is judged
In memory cell whether reach programming state.
Further, the programming state refers to state of memory cells as 0.
In the present embodiment, judge whether the memory cell in the page to be programmed reaches programming state and specifically may be used
It is interpreted as judging whether the state of memory cells in the page to be programmed is 0.
If S507, the memory cell are not reaching to programming state, by control unit to the storage
Unit applies the current program voltage.
In the present embodiment, if the memory cell that state of memory cells is not 1 in the page to be programmed be present,
Then illustrate the memory cell for being not reaching to programming state in page to be programmed also be present, i.e. do not complete to described
The programming operation of page to be programmed is, it is necessary to continue to be not up to the memory cell of programming state into the page to be programmed
Program voltage is continued to, has reached the purpose that state of memory cells is 1, wherein, the programming electricity applied
Press as current program voltage determined by above-mentioned steps.
A kind of programmed method for nonvolatile memory that the embodiment of the present invention three provides, optimization, which adds, to be based on
The temperature monitoring operation of temperature monitoring, while the setting operation of binary group information table is added, in addition, tool
Body control unit determines based on Current Temperatures information the operation of current program voltage, embodies further and is based on
The programming operation that current program voltage page to be programmed is carried out.Using the programmed method, realize based on extraneous temperature
The operation of degree regulation program voltage, so as to more fast and accurately realize the programming operation for treating programmed page,
The programming efficiency of nonvolatile memory is which thereby enhanced, and then improves the stabilization of nonvolatile memory
The purpose of property and reliability.
On the basis of above-described embodiment, the present embodiment three " control unit receive by the temperature monitoring
Before the temperature information of transmission ", also optimization includes：Based on control unit control word line options unit and position
Line options unit, the memory page to be programmed is chosen, is designated as page to be programmed.
In the present embodiment, the programming operation of nonvolatile memory is carried out in units of memory page, therefore,
The memory page for being programmed operation is selected before operation is programmed, it is necessary in memory cell array, by
This is as page to be programmed.Specifically, the selection for page to be programmed, is based primarily upon control unit and passes through control
Wordline selecting unit and bit line selecting unit are realized.
Pay attention to, above are only presently preferred embodiments of the present invention and institute's application technology principle.Those skilled in the art
It will be appreciated that the invention is not restricted to specific embodiment described here, can enter for a person skilled in the art
Row is various significantly to be changed, readjust and substitutes without departing from protection scope of the present invention.Therefore, though
So the present invention is described in further detail by above example, but the present invention be not limited only to
Upper embodiment, without departing from the inventive concept, other more equivalent embodiments can also be included,
And the scope of the present invention is determined by scope of the appended claims.
Claims (10)
1. a kind of nonvolatile memory, including the selection of memory cell array, wordline selecting unit, bit line are single
Member and control unit, it is characterised in that also include：Temperature monitoring,
The temperature monitoring, is connected with described control unit, for monitoring ring residing for nonvolatile memory
The temperature in border, and to described control unit transmit local environment temperature information.
2. nonvolatile memory according to claim 1, it is characterised in that the temperature monitoring leads to
Winding displacement is crossed with the winding displacement interface in described control unit to be connected.
3. nonvolatile memory according to claim 1 or 2, it is characterised in that the temperature prison
Survey device is temperature sensor.
A kind of 4. programmed method of nonvolatile memory, it is characterised in that including：
Control unit receives the Current Temperatures information transmitted by temperature monitoring；
Control unit determines the current program voltage of the page to be programmed based on the Current Temperatures information；
Control unit is based on the current program voltage and is programmed operation to the page to be programmed.
5. according to the method for claim 4, it is characterised in that received in control unit by temperature monitoring
Before the temperature information of device transmission, in addition to：
Turn based on the current temperature value of temperature monitoring monitoring external environment, and by the current temperature value
It is changed to the Current Temperatures information of binary coded form.
6. according to the method for claim 4, it is characterised in that be based on the current temperature in control unit
Before degree information determines the current program voltage of the page to be programmed, in addition to：
Binary group information table is set in described control unit, wherein, the binary group information table includes temperature
Spend the corresponding relation of information and program voltage difference.
7. according to the method for claim 6, it is characterised in that described control unit is based on described current
Temperature information determines the current program voltage of the page to be programmed, specifically includes：
Control unit determines the Current Temperatures information corresponding program voltage in the binary group information table
Difference, and it is poor to be designated as current program voltage；
Control unit determines to apply the memory cell in the page to be programmed based on the current program voltage difference
Current program voltage.
8. according to the method for claim 7, it is characterised in that described control unit is based on described current
Program voltage is programmed operation to the page to be programmed, specifically includes：
The memory cell of the page to be programmed is verified by control unit, judged in the page to be programmed
Whether memory cell reaches programming state；
If the memory cell is not reaching to programming state, applied by control unit to the memory cell
Add the current program voltage.
9. according to the method for claim 8, it is characterised in that the programming state refers to memory cell shape
State is 0.
10. according to any described methods of claim 4-9, it is characterised in that also include：
Based on control unit control word line options unit and bit line selecting unit, the memory page to be programmed is chosen,
It is designated as page to be programmed.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105957554A (en) * | 2016-05-10 | 2016-09-21 | 北京兆易创新科技股份有限公司 | Erasing method of non-volatile memory, and non-volatile memory |
| CN110197691A (en) * | 2018-02-26 | 2019-09-03 | 三星电子株式会社 | Non-volatile memory devices and its operating method |
| WO2020113406A1 (en) * | 2018-12-04 | 2020-06-11 | Micron Technology, Inc. | Multi-mode voltage pump and control |
| CN111462804A (en) * | 2020-03-27 | 2020-07-28 | 长江存储科技有限责任公司 | Programming method and programming device of memory |
| CN114121096A (en) * | 2020-08-27 | 2022-03-01 | 长鑫存储技术有限公司 | Memory adjusting method, memory adjusting system and semiconductor device |
| US20220068321A1 (en) | 2020-08-27 | 2022-03-03 | Changxin Memory Technologies, Inc. | Method and system for adjusting memory, and semiconductor device |
| US11735233B2 (en) | 2020-08-27 | 2023-08-22 | Changxin Memory Technologies, Inc. | Method and system for regulating memory, and semiconductor device |
| US11928357B2 (en) | 2020-08-27 | 2024-03-12 | Changxin Memory Technologies, Inc. | Method and system for adjusting memory, and semiconductor device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100110815A1 (en) * | 2008-11-04 | 2010-05-06 | Seungjae Lee | Non-Volatile Memory Device Having Temperature Compensator and Memory System Thereof |
| US20110286274A1 (en) * | 2010-05-19 | 2011-11-24 | Sung-Il Chang | Nonvolatile memory device, programming method thereof and memory system including the same |
| CN103578543A (en) * | 2012-07-25 | 2014-02-12 | 飞思卡尔半导体公司 | Methods and systems for adjusting nvm cell bias conditions based upon operating temperature to reduce performance degradation |
| CN103650056A (en) * | 2011-05-23 | 2014-03-19 | 桑迪士克科技股份有限公司 | Ramping pass voltage to enhance channel boost in memory device, with temperature compensation |
| US20140169101A1 (en) * | 2010-11-25 | 2014-06-19 | Yoon Hee Choi | Method compensation operating voltage, flash memory device, and data storage device |
-
2016
- 2016-05-10 CN CN201610305638.5A patent/CN107358976A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100110815A1 (en) * | 2008-11-04 | 2010-05-06 | Seungjae Lee | Non-Volatile Memory Device Having Temperature Compensator and Memory System Thereof |
| US20110286274A1 (en) * | 2010-05-19 | 2011-11-24 | Sung-Il Chang | Nonvolatile memory device, programming method thereof and memory system including the same |
| US20140169101A1 (en) * | 2010-11-25 | 2014-06-19 | Yoon Hee Choi | Method compensation operating voltage, flash memory device, and data storage device |
| CN103650056A (en) * | 2011-05-23 | 2014-03-19 | 桑迪士克科技股份有限公司 | Ramping pass voltage to enhance channel boost in memory device, with temperature compensation |
| CN103578543A (en) * | 2012-07-25 | 2014-02-12 | 飞思卡尔半导体公司 | Methods and systems for adjusting nvm cell bias conditions based upon operating temperature to reduce performance degradation |
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| CN105957554A (en) * | 2016-05-10 | 2016-09-21 | 北京兆易创新科技股份有限公司 | Erasing method of non-volatile memory, and non-volatile memory |
| CN110197691A (en) * | 2018-02-26 | 2019-09-03 | 三星电子株式会社 | Non-volatile memory devices and its operating method |
| US11374488B2 (en) | 2018-12-04 | 2022-06-28 | Micron Technology, Inc. | Multi-mode voltage pump and control |
| WO2020113406A1 (en) * | 2018-12-04 | 2020-06-11 | Micron Technology, Inc. | Multi-mode voltage pump and control |
| US11824441B2 (en) | 2018-12-04 | 2023-11-21 | Micron Technology, Inc. | Multi-mode voltage pump and control |
| CN111462804A (en) * | 2020-03-27 | 2020-07-28 | 长江存储科技有限责任公司 | Programming method and programming device of memory |
| CN111462804B (en) * | 2020-03-27 | 2021-05-28 | 长江存储科技有限责任公司 | Memory programming method and memory programming device |
| US20220068321A1 (en) | 2020-08-27 | 2022-03-03 | Changxin Memory Technologies, Inc. | Method and system for adjusting memory, and semiconductor device |
| CN114121096A (en) * | 2020-08-27 | 2022-03-01 | 长鑫存储技术有限公司 | Memory adjusting method, memory adjusting system and semiconductor device |
| US11735233B2 (en) | 2020-08-27 | 2023-08-22 | Changxin Memory Technologies, Inc. | Method and system for regulating memory, and semiconductor device |
| US11886721B2 (en) | 2020-08-27 | 2024-01-30 | Changxin Memory Technologies, Inc. | Method and system for adjusting memory, and semiconductor device |
| US11928357B2 (en) | 2020-08-27 | 2024-03-12 | Changxin Memory Technologies, Inc. | Method and system for adjusting memory, and semiconductor device |
| CN114121096B (en) * | 2020-08-27 | 2024-03-26 | 长鑫存储技术有限公司 | Memory adjusting method, adjusting system and semiconductor device |
| US11984190B2 (en) | 2020-08-27 | 2024-05-14 | Changxin Memory Technologies, Inc. | Method and system for adjusting memory, and semiconductor device |
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