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CN107305874A - Trench type heat radiation structure for semiconductor device - Google Patents

Trench type heat radiation structure for semiconductor device Download PDF

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Publication number
CN107305874A
CN107305874A CN201610260810.XA CN201610260810A CN107305874A CN 107305874 A CN107305874 A CN 107305874A CN 201610260810 A CN201610260810 A CN 201610260810A CN 107305874 A CN107305874 A CN 107305874A
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heat
groove
semiconductor substrate
heat conductor
heat dissipation
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CN107305874B (en
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颜孝璁
简育生
叶达勋
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Realtek Semiconductor Corp
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Realtek Semiconductor Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device

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  • Chemical & Material Sciences (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

The invention discloses a groove type heat dissipation structure for a semiconductor device, one embodiment of which comprises the following components: a first semiconductor substrate; a heat source located on or belonging to the first semiconductor substrate and including at least one hot spot; at least a first thermally conductive layer; at least one first thermal conductor for connecting the at least one thermal point and the at least one first thermally conductive layer; at least one heat dissipation groove; and at least one second heat conduction structure for connecting the at least one first heat conduction layer and the at least one heat dissipation groove, so as to conduct heat of the heat source to the heat dissipation groove.

Description

用于半导体装置的沟槽式散热结构Trench heat dissipation structure for semiconductor devices

技术领域technical field

本发明是关于散热结构,尤其是关于用于半导体装置的散热结构。The present invention relates to heat dissipation structures, in particular to heat dissipation structures for semiconductor devices.

背景技术Background technique

半导体装置于运作时会产生热,故需要散热设计以避免运作被影响。目前半导体装置的散热设计多半属于封装层级或印刷电路板层级,封装层级的散热设计通常是利用外接的散热装置来对已封装的半导体装置进行散热,而印刷电路板层级的散热设计通常是利用外接的散热装置来对设置有该半导体装置的印刷电路板进行整体性的散热。上述散热设计的效果随着半导体制程的演进而减退,对于先进制程(例如55奈米或55奈米以下的制程)而言,由于更小的电晶体,更集中(每单位面积中有更多的电晶体数量)以及更小的金属线宽和线距,使散热十分不易,进而让该些散热设计逐渐地不敷使用。Semiconductor devices generate heat during operation, so a heat dissipation design is required to prevent operation from being affected. At present, the heat dissipation design of semiconductor devices mostly belongs to the package level or printed circuit board level. The heat dissipation design at the package level usually uses an external heat sink to dissipate heat from the packaged semiconductor device, while the heat dissipation design at the printed circuit board level usually uses The heat dissipation device is used to dissipate heat as a whole on the printed circuit board provided with the semiconductor device. The effect of the above heat dissipation design decreases with the evolution of the semiconductor manufacturing process. For advanced manufacturing processes (such as 55 nm or below), due to smaller transistors, they are more concentrated (more transistors per unit area) The number of transistors) and the smaller metal line width and line spacing make heat dissipation very difficult, which makes these heat dissipation designs gradually insufficient.

鉴于上述,本领域需要一种能更有效地为半导体装置的热源(通常为电晶体)进行散热的技术,藉此满足先进半导体制程的需求。In view of the above, there is a need in the art for a technology that can more effectively dissipate heat from a heat source (usually a transistor) in a semiconductor device, so as to meet the requirements of advanced semiconductor manufacturing processes.

部分先前技术见于下列文献:公开号为US 2011/0089517 A1的美国专利申请公开案。Part of the prior art can be found in the following documents: US Patent Application Publication No. US 2011/0089517 A1.

发明内容Contents of the invention

本发明的一目的在于提出一种用于半导体装置的沟槽式散热结构,以解决先前技术的问题。An object of the present invention is to provide a trench heat dissipation structure for a semiconductor device to solve the problems of the prior art.

本发明提出一种用于半导体装置的沟槽式散热结构,其一实施例包含:一第一半导体基板;一热源,位于该第一半导体基板或属于该第一半导体基板,包含至少一热点;至少一第一热导层;至少一第一热导体,用来连接该至少一热点与该至少一第一热导层;至少一散热沟槽;以及至少一第二热导结构,用来连接该至少一第一热导层与该至少一散热沟槽,藉此将该热源的热传导至该散热沟槽。上述实施例的一样态中,该热源包含一电晶体,该至少一热点包含一源极、一汲极以及一闸极的至少其中之一,且该至少一散热沟槽处于一电性浮接状态;或者该至少一热点包含该第一半导体基板的至少一接取点。上述实施例的另一样态中,该至少一散热沟槽包含至少一沟槽热导体与至少一绝缘层,该至少一绝缘层隔离该至少一沟槽热导体与该第一半导体基板。The present invention proposes a trench-type heat dissipation structure for a semiconductor device, one embodiment of which includes: a first semiconductor substrate; a heat source located on or belonging to the first semiconductor substrate, including at least one hot spot; At least one first heat conduction layer; at least one first heat conductor, used to connect the at least one hot spot and the at least one first heat conduction layer; at least one heat dissipation groove; and at least one second heat conduction structure, used to connect The at least one first heat conduction layer and the at least one heat dissipation groove conduct heat from the heat source to the heat dissipation groove. In a state of the above-mentioned embodiment, the heat source includes a transistor, the at least one hot spot includes at least one of a source, a drain, and a gate, and the at least one heat dissipation groove is in an electrically floating connection state; or the at least one hot spot includes at least one access point of the first semiconductor substrate. In another aspect of the above-mentioned embodiment, the at least one heat dissipation trench includes at least one trench thermal conductor and at least one insulating layer, and the at least one insulating layer isolates the at least one trench thermal conductor from the first semiconductor substrate.

有关本发明的特征、实作与功效,兹配合图式作较佳实施例详细说明如下。Regarding the characteristics, implementation and effects of the present invention, preferred embodiments are described in detail below in conjunction with the drawings.

附图说明Description of drawings

图1是本发明的沟槽式散热结构的一实施例的示意图;Fig. 1 is a schematic diagram of an embodiment of the trench heat dissipation structure of the present invention;

图2是图1的实施例的一实施变化的示意图;Fig. 2 is a schematic diagram of an implementation variation of the embodiment of Fig. 1;

图3是图1的实施例的一实施变化的示意图;Fig. 3 is a schematic diagram of an implementation variation of the embodiment of Fig. 1;

图4是图1的实施例的一实施变化的示意图;Fig. 4 is a schematic diagram of an implementation variation of the embodiment of Fig. 1;

图5是图1的实施例的一实施变化的示意图;Fig. 5 is a schematic diagram of an implementation variation of the embodiment of Fig. 1;

图6是本发明的沟槽式散热结构的另一实施例的示意图;以及FIG. 6 is a schematic diagram of another embodiment of the trench heat dissipation structure of the present invention; and

图7是图6的接合结构的一实施样态的示意图。FIG. 7 is a schematic diagram of an implementation of the bonding structure in FIG. 6 .

符号说明Symbol Description

100 沟槽式散热结构100 groove heat dissipation structure

110 半导体基板110 Semiconductor substrate

120 热源120 heat source

122 热点122 Hotspots

130 第一热导层130 first heat conduction layer

132 第一底部热导层132 The first bottom heat conduction layer

134 第一顶部热导层134 First top heat conduction layer

140 第一热导体140 first thermal conductor

142 第一底部热导体142 First Bottom Thermal Conductor

144 第一顶部热导体144 First top heat conductor

150 散热沟槽150 cooling groove

152 沟槽热导体152 grooved heat conductor

154 绝缘层154 insulating layer

160 第二热导结构160 Second thermal conduction structure

510 第三热导体510 Third thermal conductor

520 散热体520 Radiator

600 沟槽式散热结构600 groove heat dissipation structure

610 第一半导体基板610 First semiconductor substrate

620 热源620 heat source

622 热点622 Hotspots

630 第一热导层630 First heat conduction layer

640 第一热导体640 First thermal conductor

650 第二热导结构650 second heat conduction structure

652 接合结构652 joint structure

654 第二热导层654 Second heat conduction layer

656 第二热导体656 Second heat conductor

660 散热沟槽660 heat sink

670 第二半导体基板670 Second semiconductor substrate

具体实施方式detailed description

以下说明内容的技术用语是参照本技术领域的习惯用语,如本说明书对部分用语有加以说明或定义,该部分用语的解释应以本说明书的说明或定义为准。另外,在实施为可能的前提下,本说明书所描述的物件间的相对关系,涵义可包含直接或间接的关系,所谓「间接」是指物件间尚有中间物或物理空间的存在。The technical terms in the following explanations refer to the customary terms in this technical field. If some terms are explained or defined in this specification, the explanations or definitions of these terms shall prevail in this specification. In addition, on the premise that implementation is possible, the meaning of the relative relationship between objects described in this specification may include direct or indirect relationship. The so-called "indirect" refers to the existence of intermediate objects or physical spaces between objects.

本发明包含用于半导体装置的沟槽式散热结构,该散热结构属于积体电路等级,能够直接为积体电路进行散热,有效解决先进半导体制程(例如55奈米或55奈米以下的制程)的散热问题,并可应用于一三维积体电路(three-dimensional integrated circuit,3D IC)。本发明的散热结构可包含于已完成封装的成品(例如已完成封装的积体电路)或尚未完成封装的半成品(例如尚未完成封装的积体电路),可能包含已知元件,在不影响发明揭露要求及可实施性的前提下,已知元件的说明或绘示将被适度节略。The present invention includes a trench heat dissipation structure for semiconductor devices. The heat dissipation structure belongs to the level of integrated circuits, can directly dissipate heat for integrated circuits, and effectively solves the problem of advanced semiconductor manufacturing processes (such as processes of 55 nanometers or less) The heat dissipation problem can be applied to a three-dimensional integrated circuit (3D IC). The heat dissipation structure of the present invention may be included in a packaged finished product (such as a packaged integrated circuit) or a semi-finished product that has not yet been packaged (such as an unpackaged integrated circuit), and may contain known components without affecting the invention. On the premise of disclosure requirements and practicability, descriptions or illustrations of known components will be appropriately omitted.

请参阅图1,其是本发明的沟槽式散热结构的一实施例的示意图。如图1所示,沟槽式散热结构100包含:一第一半导体基板110;一热源120;至少一第一热导层130;至少一第一热导体140;至少一散热沟槽150;以及至少一第二热导结构160。所述第一半导体基板110例如是一硅基板,又例如是其它种已知或自行研发的半导体基板,该第一半导体基板110于本实施例中包含形成于其上的积体电路,然此并非实施限制。所述热源120位于该第一半导体基板110上或位于该第一半导体基板110中,或属于该第一半导体基板110,换言之,该热源120可以不是也可以是该第一半导体基板110的一部分,另外,该热源120包含至少一热点122。举例而言,当该热源120包含一电晶体,该至少一热点122包含一源极、一汲极以及一闸极的至少其中之一,其中该电晶体例如是但不限于为尺寸符合55奈米或55奈米以下的半导体制程规范的电晶体。另举例而言,该至少一热点122包含该第一半导体基板110的至少一接取点(pickup)。Please refer to FIG. 1 , which is a schematic diagram of an embodiment of the trench heat dissipation structure of the present invention. As shown in FIG. 1 , the trench heat dissipation structure 100 includes: a first semiconductor substrate 110; a heat source 120; at least one first heat conduction layer 130; at least one first heat conductor 140; at least one heat dissipation groove 150; At least one second heat conduction structure 160 . The first semiconductor substrate 110 is, for example, a silicon substrate, or other known or self-developed semiconductor substrates. In this embodiment, the first semiconductor substrate 110 includes an integrated circuit formed thereon. However, Not to impose restrictions. The heat source 120 is located on or in the first semiconductor substrate 110 , or belongs to the first semiconductor substrate 110 , in other words, the heat source 120 may not or may be a part of the first semiconductor substrate 110 , In addition, the heat source 120 includes at least one hot spot 122 . For example, when the heat source 120 includes a transistor, the at least one hot spot 122 includes at least one of a source, a drain, and a gate, wherein the transistor is, for example but not limited to, a size conforming to 55 nm Transistors with semiconductor process specifications below 55nm or 55nm. For another example, the at least one hot spot 122 includes at least one pickup of the first semiconductor substrate 110 .

承上所述,所述至少一第一热导体140用来连接该至少一热点122与所述至少一第一热导层130,藉此传导该至少一热点122的热至该至少一第一热导层130,其中该至少一第一热导层130于本例中为至少一金属层,然而在实施为可能的前提下,该至少一第一热导层130可为导热性良好的至少一非金属层像是石墨层,或同时包含金属层与非金属层。举例而言,如图2所示,该至少一第一热导层130包含一第一底部热导层132与一第一顶部热导层134,且可视实施或应用需求进一步包含更多热导层(未显示于图中)于该第一底部热导层132与该第一顶部热导层134之间,该至少一第一热导体140包含至少一第一底部热导体142以及至少一第一顶部热导体144,且可视实施或应用需求进一步包含更多热导体(未显示于图中)于该至少一第一底部热导体142与该至少一顶部热导体144之间,该至少一第一底部热导体142例如是半导体制程的至少一接触体(contact),其包含一通孔与填注于该通孔中的热导体(例如金、银、铜、铜合金、铝、铝合金等金属热导体,或例如石墨等非金属热导体),用来连接该第一底部热导层132与该至少一热点122,该至少一第一顶部热导体144例如是半导体制程的至少一导通体(via),其包含一贯孔与填注于该贯孔中的热导体(例如金、银、铜、铜合金、铝、铝合金、钨、镍等金属热导体,或例如石墨等非金属热导体),用来连接该第一顶部热导层134与一第一下方热导层,该第一下方热导层包含于该至少一第一热导层130中,且为一第一居中热导层位于该第一底部热导层132与该第一顶部热导层134之间,或为该第一底部热导层132。As mentioned above, the at least one first thermal conductor 140 is used to connect the at least one hot spot 122 and the at least one first thermal conduction layer 130, thereby conducting the heat of the at least one hot spot 122 to the at least one first The heat conduction layer 130, wherein the at least one first heat conduction layer 130 is at least one metal layer in this example, but under the premise that it is possible to implement, the at least one first heat conduction layer 130 can be at least one layer with good heat conduction A non-metal layer such as a graphite layer, or both metal and non-metal layers. For example, as shown in FIG. 2, the at least one first thermal conduction layer 130 includes a first bottom thermal conduction layer 132 and a first top thermal conduction layer 134, and may further include more heat conduction layers according to implementation or application requirements. A conductive layer (not shown in the figure) is between the first bottom thermal conductive layer 132 and the first top thermal conductive layer 134, and the at least one first thermal conductor 140 includes at least one first bottom thermal conductor 142 and at least one The first top thermal conductor 144, and depending on implementation or application requirements, further include more thermal conductors (not shown in the figure) between the at least one first bottom thermal conductor 142 and the at least one top thermal conductor 144, the at least A first bottom thermal conductor 142 is, for example, at least one contact body (contact) of a semiconductor process, which includes a through hole and a thermal conductor (such as gold, silver, copper, copper alloy, aluminum, aluminum alloy) filled in the through hole. Metal heat conductors such as graphite, or non-metal heat conductors such as graphite) are used to connect the first bottom heat conduction layer 132 and the at least one hot spot 122, and the at least one first top heat conductor 144 is, for example, at least one conductor of a semiconductor process. Via, which includes a through hole and a thermal conductor filled in the through hole (such as gold, silver, copper, copper alloy, aluminum, aluminum alloy, tungsten, nickel and other metal thermal conductors, or such as graphite and other non metal heat conductor), used to connect the first top heat conduction layer 134 and a first lower heat conduction layer, the first lower heat conduction layer is included in the at least one first heat conduction layer 130, and is a The first middle thermal conduction layer is located between the first bottom thermal conduction layer 132 and the first top thermal conduction layer 134 , or is the first bottom thermal conduction layer 132 .

请再次参阅图1,所述至少一散热沟槽150可视实施需求被设计为处于一电性浮接(floating)状态或具有一特定电位,举例而言,当前述热源120包含一电晶体时,该至少一散热沟槽150包含至少一沟槽热导体152与至少一绝缘层154如图3所示,因此一散热沟槽150可处于一电性浮接状态以避免影响该电晶体的正常运作,该至少一绝缘层154例如是二氧化硅层或其它种类的电性绝缘层,用来隔离该至少一沟槽热导体152与该第一半导体基板110以避免漏电流或其它电性问题,然而只要不实质影响运作,该至少一散热沟槽150不一定要处于该电性浮接状态,而可具有一特定电位像是一固定电位;另举例而言,当前述至少一热点122为该第一半导体基板110的至少一接取点时,该至少一散热沟槽150可处于前述电性浮接状态或具有一特定电位,该特定电位例如是一固定电位像是一直流高电位、一直流低电位或一接地电位。另外,所述至少一散热沟槽150可藉由一直通硅晶穿孔(through silicon via,TSV)制程来实现,此时该散热沟槽150为一TSV沟槽;然而,本领域人士也可选择其它已知的半导体制程来形成本发明的散热沟槽150。再者,所述至少一第二热导结构160用来连接该至少一第一热导层130与该至少一散热沟槽150,藉此将该热源120的热传导至该散热沟槽150以进行散热,本实施例中,该至少一散热沟槽150形成于该第一半导体基板110中,且该至少一第二热导结构160为至少一第二热导体,然此非本发明的实施限制,其它实施例如图6、图7所示。Please refer to FIG. 1 again, the at least one heat dissipation trench 150 can be designed to be in an electrical floating state or have a specific potential according to implementation requirements, for example, when the aforementioned heat source 120 includes a transistor , the at least one heat dissipation trench 150 includes at least one trench thermal conductor 152 and at least one insulating layer 154 as shown in FIG. Operation, the at least one insulating layer 154 is, for example, a silicon dioxide layer or other types of electrical insulating layer, used to isolate the at least one trench thermal conductor 152 and the first semiconductor substrate 110 to avoid leakage current or other electrical problems However, as long as the operation is not substantially affected, the at least one heat dissipation trench 150 does not have to be in the electrically floating state, but can have a specific potential such as a fixed potential; for another example, when the aforementioned at least one hot spot 122 is At least one access point of the first semiconductor substrate 110, the at least one heat dissipation trench 150 may be in the aforementioned electrically floating state or have a specific potential, such as a fixed potential such as a DC high potential, A DC low potential or a ground potential. In addition, the at least one heat dissipation trench 150 can be realized by a through silicon via (TSV) process, and the heat dissipation trench 150 is a TSV trench at this time; however, those skilled in the art can also choose Other known semiconductor processes are used to form the thermal trench 150 of the present invention. Moreover, the at least one second heat conduction structure 160 is used to connect the at least one first heat conduction layer 130 and the at least one heat dissipation groove 150, thereby conducting the heat of the heat source 120 to the heat dissipation groove 150 for Heat dissipation, in this embodiment, the at least one heat dissipation groove 150 is formed in the first semiconductor substrate 110, and the at least one second heat conduction structure 160 is at least one second heat conductor, but this is not a limitation of the present invention , other embodiments are shown in Fig. 6 and Fig. 7 .

承上所述,为增强散热效果或为满足实施者的需求,图1的沟槽式散热结构100可衍生出多种实施变化。如图4所示,于一种实施变化中,该至少一散热沟槽150可包含S个散热沟槽150,该S个散热沟槽150以平行样式或其它样式设置而形成一沟槽阵列,其中该S为大于1的整数(图4中该S为3)。如图5所示,于另一种实施变化中,该至少一散热沟槽150贯通该第一半导体基板110,且该沟槽式散热结构100进一步包含至少一第三热导体510与至少一散热体520,该至少一第三热导体510用来连接该至少一散热沟槽150与该至少一散热体520,藉此将该热源120的热经由该散热沟槽150传导至该至少一散热体520以加强散热。实施本发明者可对图5的实施样态施予更多变化,举例而言,该至少一散热体520可包含N个散热区块,该N个散热区块以平行样式或其它样式设置而形成一散热区块阵列,其中该N为大于1的整数;另举例而言,该至少一散热体520视实施者的需求可为一专为实施本发明而增设的金属垫、一存在于既有积体电路设计中的虚设(dummy)金属布局、一导线架(lead frame)以及一外露垫(exposed pad,epad)的其中之一或任意组合,至少一散热体520也可为其它适合搭配半导体制程且能用来散热的元件像是石墨体、奈米碳管等等,上述金属布局、导线架与外露垫等属于本领域的习知技术,其细节在此不予赘述。Based on the above, in order to enhance the heat dissipation effect or meet the needs of implementers, the trench heat dissipation structure 100 in FIG. 1 can be derived into various implementation variations. As shown in FIG. 4, in an implementation variation, the at least one heat dissipation groove 150 may include S heat dissipation grooves 150, and the S heat dissipation grooves 150 are arranged in parallel or in other patterns to form a groove array, Wherein the S is an integer greater than 1 (the S is 3 in FIG. 4 ). As shown in FIG. 5, in another implementation variation, the at least one heat dissipation trench 150 penetrates the first semiconductor substrate 110, and the trench type heat dissipation structure 100 further includes at least one third heat conductor 510 and at least one heat dissipation Body 520, the at least one third heat conductor 510 is used to connect the at least one heat dissipation groove 150 and the at least one heat dissipation body 520, thereby conducting the heat of the heat source 120 to the at least one heat dissipation body through the heat dissipation groove 150 520 to enhance heat dissipation. The inventor who implements the present invention can apply more changes to the implementation state of FIG. 5. For example, the at least one heat sink 520 can include N heat dissipation blocks, and the N heat dissipation blocks are arranged in parallel or other patterns. Form an array of heat dissipation blocks, wherein the N is an integer greater than 1; for another example, the at least one heat dissipation body 520 can be a metal pad specially added for implementing the present invention, a metal pad existing in the existing There is one or any combination of a dummy metal layout, a lead frame, and an exposed pad (epad) in integrated circuit design, and at least one heat sink 520 can also be other suitable combinations. Components that can be used for heat dissipation in the semiconductor process, such as graphite, carbon nanotubes, etc., the above-mentioned metal layout, lead frame, and exposed pads are known in the art, and the details will not be repeated here.

请参阅图6,其是本发明的沟槽式散热结构的另一实施例的示意图。如图6所示,沟槽式散热结构600包含:一第一半导体基板610;一热源620包含至少一热点622;至少一第一热导层630;至少一第一热导体640;至少一第二热导结构650;至少一散热沟槽660;以及一第二半导体基板670。本实施例与图1的实施例的主要差异在于该至少一散热沟槽660形成于该第二半导体基板670中,因此该至少一第二热导结构650包含至少一接合结构652、至少一第二热导层654与至少一第二热导体656,所述至少一接合结构652用来连接该第一热导层630与该第二热导层654;所述至少一第二热导体656用来连接该至少一第二热导层654与该至少一散热沟槽660,藉此将该热源620的热传导至该至少一散热沟槽660以进行散热。Please refer to FIG. 6 , which is a schematic diagram of another embodiment of the trench heat dissipation structure of the present invention. As shown in FIG. 6, the trench heat dissipation structure 600 includes: a first semiconductor substrate 610; a heat source 620 includes at least one hot spot 622; at least one first heat conduction layer 630; at least one first heat conductor 640; Two heat conduction structures 650 ; at least one heat dissipation trench 660 ; and a second semiconductor substrate 670 . The main difference between this embodiment and the embodiment in FIG. Two thermal conduction layers 654 and at least one second thermal conductor 656, the at least one joint structure 652 is used to connect the first thermal conduction layer 630 and the second thermal conduction layer 654; the at least one second thermal conductor 656 is used to connect the at least one second heat conduction layer 654 and the at least one heat dissipation groove 660 , so as to conduct the heat of the heat source 620 to the at least one heat dissipation groove 660 for heat dissipation.

承上所述,本实施例中,该至少一接合结构652包含至少一微凸块(micro bump)如图7所示,其可藉由结合第一热导层630上的微凸块与第二热导层654上的微凸块而形成。此外,第二热导层654的实施与变化可从图1与图2的第一热导层130、第一底部热导层132与第一顶部热导层134的说明来得知;第二热导体656的实施与变化可从图1与图2的第一热导体140、第一底部热导体142与第一顶部热导体144的说明来得知;散热沟槽660的实施与变化可从图1、图3、图4、图5的散热沟槽150的说明来得知;第二半导体基板670的实施与变化可从图1的半导体基板110的说明来得知。As mentioned above, in this embodiment, the at least one bonding structure 652 includes at least one micro bump (micro bump) as shown in FIG. The micro-bumps on the second thermal conductive layer 654 are formed. In addition, the implementation and changes of the second thermal conduction layer 654 can be known from the descriptions of the first thermal conduction layer 130, the first bottom thermal conduction layer 132 and the first top thermal conduction layer 134 in FIGS. 1 and 2; The implementation and changes of the conductor 656 can be known from the description of the first thermal conductor 140, the first bottom thermal conductor 142 and the first top thermal conductor 144 in FIGS. , FIG. 3 , FIG. 4 , and FIG. 5 can be obtained from the description of the heat dissipation trench 150 ; the implementation and changes of the second semiconductor substrate 670 can be obtained from the description of the semiconductor substrate 110 in FIG. 1 .

请注意,为保护本发明的沟槽式散热结构免于外力破坏或侵蚀,该沟槽式散热结构可被一封装胶材覆盖,然而前述散热体可选择性地曝露于外而未被该封装胶材覆盖以加强散热效果,但此并非实施限制。再者,本领域具有通常知识者可以了解本实施例的图示中各元件间可能存在其它未绘示的元件或材质,该些元件或材质用以提供保护、支撑、绝缘、连接或其它已知或自定义的功能,但不影响本发明的技术特征的揭露与可实施性。Please note that in order to protect the grooved heat dissipation structure of the present invention from external damage or erosion, the grooved heat dissipation structure can be covered by a packaging adhesive, but the aforementioned heat sink can be selectively exposed without being packaged. The adhesive material is covered to enhance the heat dissipation effect, but this is not an implementation limitation. Furthermore, those skilled in the art can understand that there may be other unillustrated elements or materials between the various elements in the illustrations of this embodiment, and these elements or materials are used to provide protection, support, insulation, connection or other existing elements. Known or self-defined functions, but do not affect the disclosure and implementability of the technical features of the present invention.

请注意,前揭各实施例包含一或复数个技术特征,于实施为可能的前提下,本技术领域人士可依本发明的揭露内容及自身的需求选择性地实施任一实施例的部分或全部技术特征,或者选择性地实施复数个实施例的部分或全部技术特征的组合,藉此增加实施本发明的弹性。另请注意,本说明书的图示中元件的形状、尺寸、比例等仅为示意,是供本技术领域具有通常知识者了解本发明之用,非对本发明的实施范围加以限制。Please note that each of the aforementioned embodiments contains one or more technical features. On the premise that the implementation is possible, those skilled in the art can selectively implement part or part of any embodiment according to the disclosure content of the present invention and their own needs. All of the technical features, or a combination of some or all of the technical features of a plurality of embodiments may be selectively implemented, thereby increasing the flexibility of implementing the present invention. Please also note that the shapes, sizes, proportions, etc. of components in the illustrations in this specification are only for illustration, and are for those skilled in the art to understand the present invention, and are not intended to limit the implementation scope of the present invention.

综上所述,本发明的用于半导体装置的沟槽式散热结构能够直接为积体电路进行散热,有效地解决了先进半导体制程(例如55奈米或55奈米以下的制程)的散热问题。另外,本发明的散热结构可透过成熟、单纯的制程技术来实现,相较于先前技术具有散热效果佳、成本合理等优势。In summary, the trench heat dissipation structure for semiconductor devices of the present invention can directly dissipate heat for integrated circuits, effectively solving the heat dissipation problem of advanced semiconductor manufacturing processes (such as processes at or below 55 nanometers) . In addition, the heat dissipation structure of the present invention can be realized through a mature and simple process technology, and compared with the prior art, it has the advantages of good heat dissipation effect and reasonable cost.

虽然本发明的实施例如上所述,然而该些实施例并非用来限定本发明,本技术领域具有通常知识者可依据本发明的明示或隐含的内容对本发明的技术特征施以变化,凡此种种变化均可能属于本发明所寻求的专利保护范畴,换言之,本发明的专利保护范围须视本说明书的申请专利范围所界定者为准。Although the embodiments of the present invention are as described above, these embodiments are not intended to limit the present invention, and those skilled in the art can make changes to the technical characteristics of the present invention according to the explicit or implicit content of the present invention. All these changes may belong to the scope of patent protection sought by the present invention. In other words, the scope of patent protection of the present invention must be defined by the scope of patent application in this specification.

Claims (10)

1. a kind of plough groove type radiator structure for semiconductor device, comprising:
One first semiconductor substrate;
One thermal source, positioned at first semiconductor substrate or belongs to first semiconductor substrate, comprising at least One focus;
At least one first thermally conductive layer;
At least one first heat conductor, for connecting an at least focus and at least one first thermally conductive layer;
An at least radiating groove;And
At least one second heat conductive structure, for connecting at least one first thermally conductive layer and an at least radiating Groove, thereby by the heat transfer of the thermal source to the radiating groove.
2. plough groove type radiator structure according to claim 1, the wherein thermal source include an electric crystal, An at least focus includes at least one of a source electrode, a drain and a gate, and this is at least One radiating groove is in electrical suspension joint (floating) state.
3. plough groove type radiator structure according to claim 2, the size of the wherein electric crystal meets Manufacture of semiconductor specification below 55 nms or 55 nms.
4. plough groove type radiator structure according to claim 1, wherein an at least focus are included should An at least access point (pickup) for first semiconductor substrate.
5. plough groove type radiator structure according to claim 1, wherein an at least radiating groove shape Into in first semiconductor substrate, and at least one second heat conductive structure is at least one second heat conductor, At least one second heat conductor is used for connecting at least one first thermally conductive layer and an at least radiating groove.
6. plough groove type radiator structure according to claim 5, wherein an at least radiating groove bag Containing an at least groove heat conductor and an at least insulating barrier, an an at least insulator separation at least groove Heat conductor and first semiconductor substrate.
7. plough groove type radiator structure according to claim 5, wherein an at least radiating groove are passed through Lead to first semiconductor substrate, and the radiator structure further comprising at least one the 3rd heat conductor with least One radiator, at least one the 3rd heat conductor be used for connect an at least radiating groove with this at least one dissipate Hot body, thereby conducts the heat of the thermal source to an at least radiator via the radiating groove.
8. plough groove type radiator structure according to claim 1, wherein an at least radiating groove shape In the semiconductor substrates of Cheng Yuyi second, and at least one second heat conductive structure comprising an at least connected structure, At least one second thermally conductive layer and at least one second heat conductor, at least one second thermally conductive layer are used for via this An at least connected structure connects at least one first thermally conductive layer, and at least one second heat conductor is used for connecting At least one second thermally conductive layer and an at least radiating groove, thereby dissipate the heat transfer of the thermal source to this Heat channel groove.
9. plough groove type radiator structure according to claim 8, wherein an at least radiating groove bag Containing an at least groove heat conductor and an at least insulating barrier, an an at least insulator separation at least groove Heat conductor and second semiconductor substrate.
10. plough groove type radiator structure according to claim 8, wherein an at least radiating groove Insertion second semiconductor substrate, and the radiator structure further comprising at least one the 3rd heat conductor with extremely A few radiator, at least one the 3rd heat conductor is used for connecting an at least radiator and at least one dissipated with this Heat channel groove, thereby conducts the heat of the thermal source to an at least radiator via the radiating groove.
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US20090282852A1 (en) * 2004-10-22 2009-11-19 Nextreme Thermal Solutions, Inc. Thin Film Thermoelectric Devices for Hot-Spot Thermal Management in Microprocessors and Other Electronics

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US20090282852A1 (en) * 2004-10-22 2009-11-19 Nextreme Thermal Solutions, Inc. Thin Film Thermoelectric Devices for Hot-Spot Thermal Management in Microprocessors and Other Electronics
US20090160013A1 (en) * 2007-12-19 2009-06-25 Abou-Khalil Michel J Semiconductor device heat dissipation structure

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