CN107305830B - Capacitively coupled plasma processing apparatus and plasma processing method - Google Patents
Capacitively coupled plasma processing apparatus and plasma processing method Download PDFInfo
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- CN107305830B CN107305830B CN201610246809.1A CN201610246809A CN107305830B CN 107305830 B CN107305830 B CN 107305830B CN 201610246809 A CN201610246809 A CN 201610246809A CN 107305830 B CN107305830 B CN 107305830B
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- 238000003672 processing method Methods 0.000 title claims abstract description 5
- 238000006243 chemical reaction Methods 0.000 claims abstract description 24
- 230000008878 coupling Effects 0.000 claims abstract description 7
- 238000010168 coupling process Methods 0.000 claims abstract description 7
- 238000005859 coupling reaction Methods 0.000 claims abstract description 7
- 239000003990 capacitor Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 13
- 238000009832 plasma treatment Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 210000002381 plasma Anatomy 0.000 description 43
- 238000005530 etching Methods 0.000 description 20
- 238000009826 distribution Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 11
- 238000001020 plasma etching Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
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- Plasma Technology (AREA)
Abstract
The invention provides a capacitance coupling plasma processing device and a plasma processing method, which are used for improving the uniformity of semiconductor processing. The capacitively-coupled plasma processing apparatus includes: the reaction chamber is provided with a top wall, a side wall and a bottom wall; an upper electrode disposed on the top wall; the lower electrode is positioned in the reaction cavity and is arranged opposite to the upper electrode; a radio frequency power source applied to the lower electrode; a bias power source applied to the lower electrode; and one end of the impedance adjusting device is connected with the upper electrode or the side wall, and the other end of the impedance adjusting device is grounded.
Description
Technical Field
The present invention relates to a Capacitively coupled plasma (Capacitively coupled plasma) processing apparatus, such as a Capacitively coupled plasma etching apparatus, a Capacitively coupled plasma deposition apparatus, etc., for processing a semiconductor device, and a method of processing a semiconductor device using the same.
Background
In a manufacturing process of a semiconductor device, a plasma etching process of etching with plasma using a resist as a mask is often used in order to form a predetermined pattern on a predetermined layer formed on a semiconductor wafer as a substrate to be processed.
As a plasma etching apparatus for performing such plasma etching, various apparatuses are used, and among them, a capacitive coupling type plasma processing apparatus is mainly used.
In a capacitively-coupled plasma etching apparatus, a pair of parallel plate electrodes (upper and lower electrodes) are arranged in a chamber, a process gas is introduced into the chamber, a high frequency is applied to one of the electrodes to form a high frequency electric field between the electrodes, and plasma of the process gas is formed by the high frequency electric field to perform plasma etching on a predetermined layer of a semiconductor wafer.
Specifically, a plasma etching apparatus is known which forms a plasma by applying a high frequency for plasma formation to an upper electrode and a high frequency for ion introduction to a lower electrode to form an appropriate plasma state, thereby performing an etching process with high reproducibility at a high selection ratio (for example, U.S. Pat. No. US 6423242).
However, there is still room for improvement in existing capacitively-coupled plasma processing apparatus, particularly with respect to process uniformity.
Disclosure of Invention
According to an aspect of the present invention, there is provided a capacitively-coupled plasma processing apparatus, comprising:
the reaction chamber is provided with a top wall, a side wall and a bottom wall;
an upper electrode disposed on the top wall;
the lower electrode is positioned in the reaction cavity and is arranged opposite to the upper electrode;
a radio frequency power source applied to the lower electrode;
a bias power source applied to the lower electrode;
and one end of the impedance adjusting device is connected with the upper electrode or the side wall, and the other end of the impedance adjusting device is grounded.
Optionally, the impedance adjusting means comprises a variable capacitor.
Optionally, the impedance adjustment device comprises a variable inductor.
Optionally, the impedance adjusting device comprises a variable capacitor and a variable inductor connected in parallel.
Optionally, the impedance adjusting device includes a single-pole double-throw switch, a variable capacitor and a variable inductor, and two output ends of the single-pole double-throw switch are respectively connected to the variable capacitor and the variable inductor.
Optionally, the upper electrode is grounded through the impedance adjusting device, and the side wall is directly grounded;
or the side wall is grounded through the impedance adjusting device, and the upper electrode is directly grounded.
According to another aspect of the present invention, there is provided a capacitively-coupled plasma processing apparatus comprising:
the plasma processing device comprises a first electrode and a second electrode which are oppositely arranged, wherein a plasma processing space is formed between the first electrode and the second electrode;
a radio frequency power source applied to the second electrode;
the first electrode is grounded through an impedance adjustment device, which includes a variable inductor.
Optionally, the second electrode is a lower electrode, and the first electrode is an upper electrode.
According to still another aspect of the present invention, there is provided a capacitively-coupled plasma processing apparatus comprising:
the plasma processing device comprises a first electrode and a second electrode which are oppositely arranged, wherein a plasma processing space is formed between the first electrode and the second electrode;
a bias power source applied to the second electrode;
the first electrode is grounded through an impedance adjusting device, and the impedance adjusting device comprises a variable capacitor.
Optionally, a radio frequency power source is applied to the second electrode.
Optionally, the impedance adjusting device comprises a variable capacitor and a variable inductor connected in parallel.
Optionally, the impedance adjusting device includes a single-pole double-throw switch, a variable capacitor and a variable inductor, and two output ends of the single-pole double-throw switch are respectively connected to the variable capacitor and the variable inductor.
Optionally, the second electrode is a lower electrode, and the first electrode is an upper electrode.
According to still another aspect of the present invention, there is provided a plasma processing method comprising:
putting a substrate to be processed into the capacitive coupling plasma processing device and adjusting an impedance adjusting device;
and introducing treatment gas into the capacitive coupling plasma treatment device to process the substrate to be treated.
Drawings
FIG. 1 is a schematic diagram of a capacitively-coupled plasma processing apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a capacitively-coupled plasma processing apparatus according to another embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a capacitively-coupled plasma processing apparatus according to yet another embodiment of the present invention;
FIG. 4 is a graph showing the measured radial profile of the etch rate to illustrate the superior results of embodiments of the present invention.
Detailed Description
The present invention will be described with reference to the following embodiments and accompanying drawings. It is emphasized that this is merely an example and does not preclude additional embodiments of the present invention from being utilized.
The capacitive coupling plasma processing device comprises a reaction chamber which is formed by enclosing a plurality of walls (such as a side wall, a top wall and a bottom wall), and a space is arranged inside the reaction chamber. The reaction chamber may be evacuated. Except for the gas inlet, the gas outlet and the substrate access passage, other parts of the reaction chamber are kept closed and isolated from the outside during the treatment process. The gas inlet is connected to an external gas source for continuously supplying process gas to the reaction chamber during the process. The exhaust port is connected with an external pump, and is used for exhausting waste gas generated in the treatment process out of the reaction cavity and controlling the air pressure in the reaction cavity. The processing apparatus further includes upper and lower electrodes and high frequency power sources (e.g., rf power source and bias power source) coupled thereto for igniting and controlling the energy of the plasma. FIG. 1 is a schematic structural diagram of a capacitively-coupled plasma processing apparatus according to an embodiment of the present invention, which is mainly used to show the positional relationship between the upper and lower electrodes and the side wall and the transmission path of high-frequency power in the reaction chamber, and thus, it does not show the less relevant structures (such as the top wall, the bottom wall, the gas inlet, the gas outlet, the substrate access channel, etc.).
As shown in fig. 1, parallel upper electrode (first electrode) 2 and lower electrode (second electrode) 4 are disposed opposite to each other, and a plasma processing space (in which excited plasma is mainly concentrated) is defined between upper and lower electrodes 2 and 4. The upper electrode may be generally disposed on a ceiling wall (not shown) of the reaction chamber, or may be considered as a portion of the ceiling wall. In addition, a gas spray header 3 can be arranged below the upper electrode 2 and used as a channel for the reaction gas to enter the reaction cavity. The lower electrode 4 is generally disposed on an electrostatic chuck (electrostatic chuck), and a substrate W to be processed may be fixed on an upper surface of the electrostatic chuck.
A radio frequency power source (typically a high frequency power generator) (HF generator shown in the figure) is applied to the lower electrode 4 for exciting the reaction gas between the upper and lower electrodes into plasma. To improve the feeding efficiency, an impedance matching network (HF matching network) may be provided between the rf power source and the lower electrode 4. The frequency of the rf power source is typically greater than 10M, such as 60M or 13.56M.
A bias power source (typically a high frequency power generator, which is lower in frequency than the rf power source and thus may be referred to as a lower frequency high frequency power generator) (shown as LF generator) is also applied to the lower electrode 4 to control the distribution of plasma energy. To improve the feeding efficiency, an impedance matching network (shown as LF matching network) may be provided between the bias power source and the lower electrode 4. The frequency of the bias power source is usually less than 5M, such as 2M or 500K.
The upper electrode to which the high frequency power source (e.g., the rf power source and the bias power source) is not applied may be generally grounded. The side walls of the reaction chamber are also typically grounded.
In a capacitively coupled plasma processing apparatus similar to that of fig. 1, but which does not include an impedance adjusting means connected between the upper electrode and the ground, an rf current loop is formed by a high frequency power source (an rf power source or a bias power source) and an impedance matching network, the lower electrode 4, the upper electrode 2, and the side wall 6 of the reaction chamber. That is, there are two main paths for the rf current (or rf power): one is that the plasma passes through a high-frequency power source, a lower electrode and the plasma and then enters the ground from an upper electrode; the other path is through the high frequency power source, the bottom electrode, the plasma, and then to ground from the sidewall. The magnitude of the RF current is mainly determined by the impedance of the upper and lower electrodes, the plasma, and the sidewall of the reaction chamber. The current distribution of the rf current in the two paths is mainly determined by the impedances of the sidewall and the upper electrode. Typically, the composition of these components is fixed. Thus, the distribution of the rf current through the paths can only be determined. Due to the diversity of etching process conditions, the fixed and unchangeable cavity impedance can only meet the requirement of etching uniformity under certain conditions, and the etching rate can be deteriorated under certain conditions, so that the requirement of etching rate uniformity can not be met.
The capacitively coupled plasma processing apparatus of fig. 1 allows the impedance of an rf current path (the current path through the upper electrode) to be adjusted (i.e., varied in magnitude) by coupling an impedance matching device between the upper electrode 2 and ground (or a ground circuit). By readjusting the impedance, the current levels of the two paths can be redistributed, thereby improving the uniformity of the process. For example, when the etching rate of the middle region of the substrate is faster and the etching rate of the edge region of the substrate is slower, the impedance of the impedance matching device can be increased, so that the radio frequency current of the upper electrode is reduced, the radio frequency current of the side wall of the reaction cavity is increased, the etching rate of the central region of the substrate is reduced, and the etching rate of the edge region of the substrate is increased. For another example, when the etching rate of the middle region of the substrate is slower and the etching rate of the edge region of the substrate is faster, the impedance of the impedance matching device can be reduced, so that the radio frequency current of the upper electrode is increased, the radio frequency current of the side wall of the reaction cavity is reduced, the etching rate of the central region of the substrate is increased, and the etching rate of the edge region of the substrate is slowed down.
In fig. 1, the impedance matching device is a variable inductor 80. Due to the impedance of the inductor being Z
LJ ω L, in a dual-frequency (or multifrequency) plasma system, which is paired with a high frequency (j>10MHz) impedance is much greater than for low frequencies (C<10MHz) so that it primarily limits the higher frequency current (rf power corresponding to the rf power source) through the upper electrode to groundRate current). Thus, with the variable inductor, the distribution of high frequency current (radio frequency power current corresponding to a radio frequency power source) through the upper electrode to ground and through the sidewall to ground can be adjusted. Thus, plasmas with different density distributions can be generated, and the uniformity of the etching rate distribution can be adjusted.
Fig. 2 is a schematic structural diagram of a capacitively-coupled plasma processing apparatus according to another embodiment of the present invention. The only difference from the embodiment of fig. 1 is that in fig. 2 the impedance adjusting means is a variable capacitor 82. The radio frequency impedance due to the capacitor is Z
C1/j ω C, which has a limiting effect mainly on low frequency currents. Thus, a portion of the low frequency current that originally passed through the top electrode to ground is coupled from the edge of the bottom electrode to the sidewall, thereby affecting the sheath distribution on the surface of the electrode and the wafer. Thus, with the variable capacitor, the uniformity of the plasma sheath distribution can be adjusted, thereby adjusting the uniformity of the etch rate and the angular distribution of ion incidence. In addition, the radio frequency voltage and the direct current bias voltage amplitude of the upper electrode and the lower electrode can be adjusted by adjusting the impedance of the upper electrode, so that the ion energy distribution for etching is adjusted. Thereby improving the uniformity of etching.
Fig. 3 is a schematic structural diagram of a capacitively-coupled plasma processing apparatus according to still another embodiment of the present invention. The difference between the embodiments of fig. 1 and 2 is only that, in fig. 3, the impedance adjusting device includes a single-pole double-throw switch K, a variable capacitor 82 'and a variable inductor 80', and two output terminals of the single-pole double-throw switch K are respectively connected to the variable capacitor 82 'and the variable inductor 80'. Through the single-pole double-throw switch, the impedance adjusting device can be switched between the variable capacitor and the variable inductor, so that the impedance adjusting device has the advantages of the variable capacitor and the variable inductor, and the uniformity distribution and the etching rate adjusting range of plasma are expanded. In addition, in other embodiments, the variable capacitor and the variable inductor connected in parallel are not limited to being connected to the upper electrode in an alternative manner, but are connected to the upper electrode in a normal manner. That is, the switch may not be provided, and the upper electrode and the ground may be directly connected in a parallel circuit of the variable capacitor and the variable inductor.
FIG. 4 is a graph showing the measured radial profile of the etch rate to illustrate the superior results of embodiments of the present invention. Wherein the curve with the rectangle (the upper curve in the figure) represents the etching rate of different areas of the substrate for an etching apparatus without the impedance-tuning device (the apparatus only differs from the apparatus of figure 1 in that the impedance-tuning device is absent). It is a curve with a distinct convex center, indicating that the device etches the substrate at a rate significantly in the center region of the substrate beyond the edge region of the substrate. The rounded curve (lower curve in the figure) shows the etch rate of the device of figure 1 for different regions of the substrate. It is a much flatter curve, indicating that the etch uniformity of the device is significantly improved.
The impedance adjusting devices in the above embodiments may be disposed not between the upper electrode and the ground but between the sidewall of the reaction chamber and the ground, and accordingly, the upper electrode may be directly grounded. Improved etch uniformity can also be achieved by adjusting the rf current in the sidewall path. The principle is similar to the previous embodiments.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (11)
1. A capacitively-coupled plasma processing apparatus, comprising:
the reaction chamber is provided with a top wall, a side wall and a bottom wall;
an upper electrode disposed on the top wall;
the lower electrode is positioned in the reaction cavity and is arranged opposite to the upper electrode;
a radio frequency power source applied to the lower electrode;
a bias power source applied to the lower electrode;
one end of the impedance adjusting device is connected with the upper electrode, the other end of the impedance adjusting device is grounded, the upper electrode is grounded through the impedance adjusting device to form a first radio frequency current path enabling radio frequency current to pass through the upper electrode, and the side wall is directly grounded to form a second radio frequency current path enabling the radio frequency current to pass through the side wall; the impedance of the first radio frequency current path is adjusted through the impedance adjusting device, and the radio frequency current passing through the first radio frequency current path and the second radio frequency current path is distributed; or one end of the impedance adjusting device is connected with the side wall, the other end of the impedance adjusting device is grounded, the side wall is grounded through the impedance adjusting device, and the upper electrode is directly grounded.
2. The capacitively coupled plasma processing apparatus of claim 1, wherein said impedance adjusting means includes a variable capacitor.
3. The capacitively coupled plasma processing apparatus of claim 1, wherein said impedance adjusting means comprises a variable inductor.
4. The capacitively coupled plasma processing apparatus of claim 1, wherein said impedance adjusting means includes a variable capacitor and a variable inductor connected in parallel.
5. The capacitively coupled plasma processing apparatus of claim 1, wherein said impedance adjusting means comprises a single pole double throw switch, a variable capacitor and a variable inductor, and two output terminals of said single pole double throw switch are connected to said variable capacitor and said variable inductor, respectively.
6. A capacitively-coupled plasma processing apparatus, comprising:
a reaction chamber including a sidewall grounded to form a second RF current path for passing the RF current through the sidewall;
the plasma processing device comprises a first electrode and a second electrode which are oppositely arranged, wherein a plasma processing space is formed between the first electrode and the second electrode;
a radio frequency power source applied to the second electrode;
the first electrode is grounded through an impedance adjusting device to form a first radio frequency current path which enables radio frequency current to pass through the first electrode, and the impedance adjusting device comprises a variable inductor which enables the impedance of the first radio frequency current path to be adjustable and distributes the radio frequency current passing through the first radio frequency current path and the second radio frequency current path; the second electrode is a lower electrode, and the first electrode is an upper electrode.
7. A capacitively-coupled plasma processing apparatus, comprising:
a reaction chamber including a sidewall grounded to form a second RF current path for passing the RF current through the sidewall;
the plasma processing device comprises a first electrode and a second electrode which are oppositely arranged, wherein a plasma processing space is formed between the first electrode and the second electrode;
a bias power source applied to the second electrode;
the first electrode is grounded through an impedance adjusting device to form a first radio frequency current path which enables radio frequency current to pass through the first electrode, and the impedance adjusting device comprises a variable capacitor which enables the impedance of the first radio frequency current path to be adjustable and distributes the radio frequency current passing through the first radio frequency current path and the second radio frequency current path; the second electrode is a lower electrode, and the first electrode is an upper electrode.
8. The capacitively-coupled plasma processing apparatus of claim 7, wherein an rf power source is applied to said second electrode.
9. The capacitively coupled plasma processing apparatus of claim 8, wherein said impedance adjusting means includes a variable capacitor and a variable inductor connected in parallel.
10. The capacitively coupled plasma processing apparatus of claim 8, wherein said impedance adjusting means includes a single pole double throw switch, a variable capacitor and a variable inductor, and two output terminals of said single pole double throw switch are connected to said variable capacitor and said variable inductor, respectively.
11. A plasma processing method, comprising:
placing a substrate to be processed in the capacitively-coupled plasma processing apparatus as claimed in any one of claims 1 to 10, and adjusting the impedance adjusting means;
and introducing treatment gas into the capacitive coupling plasma treatment device to process the substrate to be treated.
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| CN109961998B (en) * | 2017-12-22 | 2021-06-08 | 中微半导体设备(上海)股份有限公司 | Plasma processing device and control method based on thickness monitoring of focusing ring |
| CN113838734B (en) * | 2020-06-24 | 2023-09-01 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and substrate processing method |
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