CN107255912A - Improve the method for crystal edge defect in photoresist coating procedure - Google Patents
Improve the method for crystal edge defect in photoresist coating procedure Download PDFInfo
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- CN107255912A CN107255912A CN201710652795.8A CN201710652795A CN107255912A CN 107255912 A CN107255912 A CN 107255912A CN 201710652795 A CN201710652795 A CN 201710652795A CN 107255912 A CN107255912 A CN 107255912A
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 165
- 238000000034 method Methods 0.000 title claims abstract description 116
- 239000011248 coating agent Substances 0.000 title claims abstract description 96
- 238000000576 coating method Methods 0.000 title claims abstract description 96
- 239000013078 crystal Substances 0.000 title claims abstract description 77
- 230000007547 defect Effects 0.000 title claims abstract description 32
- 238000012545 processing Methods 0.000 claims abstract description 93
- 238000004140 cleaning Methods 0.000 claims abstract description 69
- 238000005406 washing Methods 0.000 claims abstract description 53
- 230000008569 process Effects 0.000 claims abstract description 33
- 230000006872 improvement Effects 0.000 claims abstract description 16
- 230000006641 stabilisation Effects 0.000 claims abstract description 16
- 238000011105 stabilization Methods 0.000 claims abstract description 16
- 238000001035 drying Methods 0.000 claims abstract description 7
- 239000007788 liquid Substances 0.000 claims description 39
- 230000009467 reduction Effects 0.000 claims description 15
- 239000012530 fluid Substances 0.000 claims description 13
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 238000005507 spraying Methods 0.000 claims description 3
- 238000009736 wetting Methods 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 2
- 230000011218 segmentation Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 64
- 230000001133 acceleration Effects 0.000 description 21
- 230000008859 change Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000011324 bead Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
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- 239000004065 semiconductor Substances 0.000 description 2
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- 238000004528 spin coating Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
The method that the present invention provides crystal edge defect in a kind of improvement photoresist coating procedure, including：Photoresist coating is carried out to coat rotating speed, the photoresist coat with preset thickness is formed in pending wafer upper surface；The main rotating speed processing of multisection type is carried out to photoresist coat, including the processing of the first rotating speed and rotating speed are handled less than the second rotating speed of the first rotating speed, and it is kept moistening；Second rotating speed handles washing process before the steady film to crystal round fringes for including the first stage, to moisten crystal round fringes and remove the part that photoresist coat overflows to crystal round fringes after application；And the thickness stabilization processes of second stage；Washing process after steady film is carried out to crystal round fringes, to remove the part that photoresist coat is diffused into crystal round fringes, spin drying is carried out.By such scheme, the present invention can effectively remove the photoresist of the crystal round fringes in photoresist coating procedure by the technological process to processing and the improvement of cleaning ozzle equipment, and the yield of product is increased by 1~2%.
Description
Technical field
It is more particularly to a kind of to improve brilliant in photoresist coating procedure the invention belongs to semiconductor preparing process technical field
The method of side defect.
Background technology
In semiconductor fabrication process, the step of photoetching process is considered as most critical in IC manufacturing always, its
Need to be used multiple times in whole technical process, its stability, reliability and process yield to the quality of product, yield and
Cost has important influence.Photoetching process is a complicated process, and its essence is with the shape of figure patch structure
Formula will be performed etching on the chip with ion implanting after copying to：One layer of photoresist is formed on chip first by glue spreader
Thin layer, then illumination is radiated on photoresist thin layer by a mask plate makes its exposure two go bad, and finally utilizes developer solution to carry out
Development completes to shift in figure.
At present, it is necessary to which carrying out edge bead removes technique or the removal of back side photoresist in photoresist spin coating process
Technique, such as (Edge Bead Removal, EBR or backside rinse, BSR), to remove the photoresist of crystal round fringes,
It is mainly removed by chemical method and optical means, still, and for some special photoresist coats, such as bottom resists
Reflecting layer (BARC) be difficult removed by existing mode, in this regard, also carried out it is substantial amounts of research with practice, if any by changing
Become the composition (Replace resist content) of photoresist to solve the sordid problem of above-mentioned cleaning, but this way meeting
Critical process processing procedure is caused to change；Material (the Replace backside rinse by changing cleaning fluid also
Solventmaterial) solve the above problems, but this way can make the equipment of cleaning fluid change again.
Therefore it provides a kind of change minimum to other equipment and can improve crystal round fringes photoetching glue residua to maximum efficiency
Processes and apparatus, is necessary the problem of for solving the crystal edge defect in photoresist coating procedure.
The content of the invention
The shortcoming of prior art, photoresist coating procedure is improved it is an object of the invention to provide one kind in view of the above
The method of middle crystal edge defect, for solving the problem of photoresist of Waffer edge in the prior art is difficult to remove.
In order to achieve the above objects and other related objects, the present invention provides crystal edge in a kind of improvement photoresist coating procedure and lacked
Sunken method, comprises the following steps：
1) photoresist coating is carried out to coat rotating speed, to form the photoresist coat with preset thickness in pending crystalline substance
Round upper surface；
2) the main rotating speed of multisection type is carried out to the photoresist coat to handle, and the main rotating speed processing bag of the multisection type
It is less than the second rotating speed processing that first rotating speed is handled containing the processing of the first rotating speed and rotating speed, and the photoresist coat is existed
Moistening is kept during the main rotating speed processing；In the first stage of second rotating speed processing, to being coated with the light
The back side of the wafer of photoresist coat carries out washing process before steady film, to moisten the edge of the wafer and remove the photoresist
Coat overflows to the part of the crystal round fringes after application；In the second stage of second rotating speed processing, to the light
Photoresist coat carries out thickness stabilization processes；
3) washing process after steady film is carried out to the back side of the wafer, to remove the photoresist coat in thickness
The part of the crystal round fringes is diffused into during stabilization processes；And
4) spin drying is carried out to the wafer, the photoresist coat is only formed at the upper surface of the wafer and not
With moistening mobilization force.
As a preferred embodiment of the present invention, the main rotating speed processing of multisection type is also handled comprising reduction of speed, is implemented
Between the processing of first rotating speed and the processing of the second rotating speed, wherein, the rotating speed of the reduction of speed processing is less than at first rotating speed
The rotating speed of reason, and the photoresist coat is kept moistening during reduction of speed processing.
As a preferred embodiment of the present invention, in step 2) the steady film of carry out before washing process and step 3) carry out it is steady
After film at least one of washing process, in addition to the step of aiding in liquid is coated to photoresist coat sprinkling simultaneously.
Be used as a preferred embodiment of the present invention, step 1) specific steps include：
1-1) upper surface of pending wafer is carried out pre-wetting processing, and first is carried out to the wafer upper surface simultaneously
The processing of secondary sprinkling coating auxiliary liquid；
Photoresist 1-2) is placed in the wafer upper surface and rotary coating is carried out with the coating rotating speed, is had to be formed
The photoresist coat of preset thickness.
It is used as a preferred embodiment of the present invention, step 1-1) and step 1-2) between, also it is included in step 1-1) complete
After stop preset time, and the step of second of sprinkling coating auxiliary liquid processing is carried out to the upper surface of the wafer after stop
Suddenly, wherein, the wafer stops operating during carrying out the stop, and carries out at second of sprinkling coating auxiliary liquid
The rotating speed of reason is less than the rotating speed for carrying out the first time sprinkling coating auxiliary liquid processing.
As a preferred embodiment of the present invention, the preset time is 0.5~1.5s；Second of sprinkling is carried out to apply
The time for covering auxiliary liquid processing is 0.1~0.5s, and rotating speed is 50~150 revs/min.
Be used as a preferred embodiment of the present invention, step 1-1) described pre-wet processing and first time sprinkling is applied
The time for covering auxiliary liquid processing is 2~7s, and rotating speed is 1000~2000 revs/min；Step 1-2) the rotary coating when
Between be 0.5~5s, rotating speed be 3000~5000 revs/min.
As a preferred embodiment of the present invention, time of the first rotating speed processing is 2~5s, rotating speed is 1800~
2800 revs/min；The time of washing process is 3~5s before the steady film, and rotating speed is 1000~1500 revs/min；The thickness
The time of stabilization processes is 15~25s, and rotating speed is 1000~1500 revs/min；The time of washing process is 5 after the steady film
~10s, rotating speed is 800~1200 revs/min.
It is used as a preferred embodiment of the present invention, step 2) in, using the first cleaning ozzle to being coated with the photoresist
The crystal round fringes of coat carry out washing process before the steady film, wherein, the ozzle mouthful edge of the first cleaning ozzle and institute
The distance between wafer lateral margin is stated for 0.1~10mm, between the injection direction and the crystal column surface of the first cleaning ozzle
Angle be 45~60 °, to increase the adhesion between first cleaning fluid that is sprayed of cleaning ozzle and the crystal round fringes
Power, and reduction is positioned at the centrifugal force of the cleaning fluid of the crystal round fringes.
It is used as a preferred embodiment of the present invention, a diameter of 0.6~0.8mm of the first cleaning ozzle, described first
The flow rate of liquid cleaned in ozzle is 90~100L/min.
It is used as a preferred embodiment of the present invention, step 3) in, using the second cleaning ozzle to being coated with the photoresist
The crystal round fringes of coat carry out washing process after the steady film, wherein, the ozzle mouthful edge of the second cleaning ozzle and institute
The distance between wafer lateral margin is stated for 40~50mm, between the injection direction and the crystal column surface of the second cleaning ozzle
Angle is 30~40 °, a diameter of 0.9~1.2mm of the second cleaning ozzle, and the flow rate of liquid of the second cleaning ozzle is
45~85L/min.
As described above, the present invention's improves the method for crystal edge defect in photoresist coating procedure, have the advantages that：
1) it is of the invention to improve the method for crystal edge defect in photoresist coating procedure, by the technological process to processing and
The improvement of ozzle equipment is cleaned, the photoresist of the crystal round fringes in photoresist coating procedure can be effectively removed, and avoid thus
The generation of caused surface defect；
2) it is of the invention to improve the method for crystal edge defect in photoresist coating procedure, can cleaning wafer side to greatest extent
The photoresist of edge, maximum can be to 100% removing, and the yield of product is increased by 1~2%.
Brief description of the drawings
Fig. 1 is shown as the flow chart of each step of crystal edge defect method in the improvement photoresist coating procedure of the present invention.
Fig. 2 be shown as the present invention improve photoresist coating procedure in crystal edge defect method step 1) before provide light
The brief configuration schematic diagram of photoresist coating equipment.
Fig. 3 is shown as the step 2 of crystal edge defect method in the improvement photoresist coating procedure of the present invention) middle first turn of progress
Structural representation obtained by after speed processing.
What Fig. 4 was shown as the present invention improves the step 2 of crystal edge defect method in photoresist coating procedure) in carry out before steady film
The schematic diagram of washing process.
What Fig. 5 was shown as the present invention improves the step 2 of crystal edge defect method in photoresist coating procedure) in carry out before steady film
Structural representation obtained by after washing process.
What Fig. 6 was shown as the present invention improves the step 3 of crystal edge defect method in photoresist coating procedure) in carry out after steady film
The schematic diagram of washing process.
What Fig. 7 was shown as the present invention improves the step 3 of crystal edge defect method in photoresist coating procedure) in carry out after steady film
Structural representation obtained by after washing process.
Component label instructions
11 wafers
21 steps 2) after obtained photoresist coat
211 steps 2) edge bead that remains afterwards
22 steps 2) after obtained photoresist coat
23 steps 3) after obtained photoresist coat
31 first cleaning ozzles
32 second cleaning ozzles
41 rotation platforms
51 coating auxiliary liquid
S1~S4 steps
Embodiment
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Fig. 1 is referred to Fig. 7.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, though only display is with relevant component in the present invention rather than according to package count during actual implement in diagram
Mesh, shape and size are drawn, and form, quantity and the ratio of each component can be a kind of random change during its actual implementation, and its
Assembly layout form may also be increasingly complex.
As shown in figure 1, the method that the present invention provides crystal edge defect in a kind of improvement photoresist coating procedure, including following step
Suddenly：
1) photoresist coating is carried out to coat rotating speed, to form the photoresist coat with preset thickness in pending crystalline substance
Round upper surface；
2) the main rotating speed of multisection type is carried out to the photoresist coat to handle, and the main rotating speed processing bag of the multisection type
It is less than the second rotating speed processing that first rotating speed is handled containing the processing of the first rotating speed and rotating speed, and the photoresist coat is existed
Moistening is kept during the main rotating speed processing；In the first stage of second rotating speed processing, to being coated with the light
The back side of the wafer of photoresist coat carries out washing process before steady film, to moisten the edge of the wafer and remove the photoresist
Coat overflows to the part of the crystal round fringes after application；In the second stage of second rotating speed processing, to the light
Photoresist coat carries out thickness stabilization processes；
3) washing process after steady film is carried out to the back side of the wafer, to remove the photoresist coat in thickness
The part of the crystal round fringes is diffused into during stabilization processes；And
4) spin drying is carried out to the wafer, the photoresist coat is only formed at the upper surface of the wafer and not
With moistening mobilization force.
Further crystal edge in the improvement photoresist coating procedure provided in the present invention is lacked below in conjunction with specific accompanying drawing
Sunken method is described in detail.
As shown in S1 and Fig. 2 in Fig. 1, step 1 is carried out), photoresist coating is carried out to coat rotating speed, is had in advance to be formed
If the photoresist coat of thickness is in the upper surface of pending wafer 11；
Specifically, in step 1) in, first photoresist to be coated wafer the surface (wafer in the present embodiment
Upper surface) the photoresist coat with preset thickness is formed, to complete the photoresist initial application in whole technical process
Step, to ensure the stability of the photoresist coat subsequently ultimately formed, it is ensured that product yield.
In addition, carrying out step 1) before, in addition to a photoresist coating equipment is provided, wafer 11 is loaded into the light
Step on the rotation platform 41 of photoresist coating equipment, specifically, the photoresist coating equipment is ordinary skill people
Any photoresist coating equipment known to member, such as glue spreader in the present embodiment, the rotation platform 41 is driven by electric rotating machine
Rotate, and then drive the wafer 11 to rotate, so as to complete the coating procedure of whole photoresist.
As an example, step 1) specific steps include：
1-1) the pending upper surface of wafer 11 is carried out to pre-wet processing, and simultaneously to the upper surface of wafer 11 progress the
The once processing of sprinkling coating auxiliary liquid；
Photoresist 1-2) is placed in the upper surface of wafer 11 and rotary coating is carried out with the coating rotating speed, to form tool
There is the photoresist coat of preset thickness.
Specifically, formed preset thickness the photoresist coat the step of include step 1-1) pretreatment and step
Rapid 1-2) photoresist rotary coating, wherein, described pre-wet is processed as the coating that follow-up photoresist coating provides high-quality
Surface, reduces the obstruction in photoresist coating procedure；Carrying out the first time sprinkling coating auxiliary liquid can aid in photoresist to apply
Cover, promote the adhesion characteristic of photoresist and wafer, its composition is preferably the material close with the photoresist to be coated, according to reality
Depending on demand, wherein, the sprinkling of coating auxiliary liquid 51 is preferably front sprinkling as described in Figure 2.Applied in addition, carrying out the rotation
After cloth, in addition to carry out the time of a backflow of slowing down, prevent too fast rotary coating rotating speed from influenceing subsequent technique, it is described to subtract
The time of speed backflow is 0.5~1.5s, and rotating speed is 50~150 revs/min (rpm).Wherein, it is described to pre-wet processing and described the
Once the time of sprinkling coating auxiliary liquid processing is 2~7s, and preferably 3~6s, rotating speed is 1000~2000 revs/min (rpm),
Preferably 1200~1800 revs/min, acceleration is 10000 revs/min/second (rpm/s).The time of the rotary coating is
0.5~5s, preferably 1~3s, rotating speed are 3000~5000 revs/min, and preferably 3500~4500 revs/min, acceleration is
30000 revs/min/second (rpm/s).
As an example, step 1-1) and step 1-2) between, be also included in step 1-1) after the completion of stop preset time, and
Second of sprinkling coating of upper surface progress to the wafer after stop aids in the step of liquid is handled, wherein, stop described in progress
The wafer stops operating during staying, and carries out the rotating speed for spraying coating auxiliary liquid processing for the second time less than progress institute
State the rotating speed of the auxiliary liquid processing of sprinkling coating for the first time.
Specifically, the purpose for carrying out the stop of the preset time is when leaving certain reaction to the processing carried out before
Between, with the coating for the photoresist more effectively stablized, in addition, also include carrying out the step of primary coating auxiliary liquid sprays again,
To promote the coating of photoresist.In other embodiments, the step of second sprinkling coating auxiliary liquid is handled can with it is rear
The rotary coating of continuous photoresist is carried out simultaneously, and controls spraying time according to actual demand.Specifically, the preset time is
0.5~1.5s, preferably 0.8~1.2s, carry out the rotating speed of the second sprinkling coating auxiliary liquid processing for 50~150 turns/
Minute, preferably 80~120 revs/min, acceleration is 10000rpm/s, and the time is 0.1~0.5s, preferably 0.2~0.4s.
As shown in the S2 in Fig. 1 and Fig. 3~5, step 2 is carried out), multisection type is carried out to the photoresist coat and mainly turned
Speed processing, and the processing of the multisection type main rotating speed handles be less than that first rotating speed handles with rotating speed the comprising the first rotating speed
The processing of two rotating speeds, and the photoresist coat is kept moistening during the main rotating speed processing；Described second
The first stage of rotating speed processing, washing process before steady film is carried out to being coated with the back side of wafer of the photoresist coat, with
Moisten the edge of the wafer and remove the part that the photoresist coat overflows to the crystal round fringes after application；Institute
The second stage of the second rotating speed processing is stated, thickness stabilization processes are carried out to the photoresist coat；
Specifically, carrying out the first rotating speed processing, mainly make the photoresist coat that there is a thickness and profit
Humidity, thereby may be ensured that among follow-up cleaning process, not interfere with the stability of photoresist coat, in addition, at this
Among individual process, the photoresist coat need to be controlled to be in moisture state, can just be provided for follow-up edge bead of removing
One suitable removal condition, not only to be stablized but also margin residual can be removed clean photoresist coat.Wherein, institute
State the first rotating speed processing time be 2~5s, rotating speed be 1800~2800 revs/min, preferably 2000~2500 revs/min,
Acceleration is 10000rpm/s.
Specifically, washing process is to being coated with the first para-crystal that the wafer of photoresist coat is carried out before the steady film
Circle Wafer Backside Cleaning (Backside rinse clean), this step is removed most of photoresist of wafer lateral margin, and Fig. 5 can be with
Find out, by the step, wafer lateral margin there remains part edge photoresist 211, in addition, the coat wetting of control photoresist,
Condition is provided to remove wafer lateral margin photoresist for the first time, wherein, it is too early that the washing process to crystal round fringes can not be carried out, no
The stability of photoresist coat, i.e. thickness can be then influenceed, in addition, what cannot also be carried out is too late, otherwise can cause photoresist
Have been secured to crystal column surface, it is difficult to remove.Wherein, before the steady film washing process time be 3~5s, rotating speed be 1000~
1500 revs/min, acceleration is 10000rpm/s.
As an example, the main rotating speed processing of multisection type is also handled comprising reduction of speed, implement in first rotating speed processing
Between the processing of the second rotating speed, wherein, the rotating speed of the reduction of speed processing is less than the rotating speed that first rotating speed is handled, and makes described
Photoresist coat keeps moistening during reduction of speed processing.
Specifically, also increasing step reduction of speed processing between first rotating speed processing and second rotating speed processing
Step, so as to ensure there is a good transition between the two, now, the rotating speed of the reduction of speed processing is less than first rotating speed
The rotating speed of processing, to reduce rotating speed so as to adapt to follow-up washing.Wherein, the time of the reduction of speed processing is 0.5~1.5s, rotating speed
For 1000~1500 revs/min, acceleration is 10000rpm/s.
Specifically, after washing process before carrying out the steady film, to be adjusted thickness to the photoresist coat
Stabilization processes, due to carry out the first rotating speed processing time much smaller than prior art carry out main rotating speed processing when
Between, therefore, during the thickness stabilization processes of the step, the time of the rotary coating required for refilling, i.e. control time
And rotating speed, and actual demand, adjust suitable thickness.Wherein, the time of the thickness stabilization processes is 15~25s, is turned
Speed is 1000~1500 revs/min, and acceleration is 10000rpm/s.
As shown in S5 and Fig. 6 and Fig. 7 in Fig. 1, step 3 is carried out), the crystal round fringes are carried out after steady film at washing
Reason, to remove the part that the photoresist coat is diffused into the crystal round fringes in thickness stabilization processes；
Specifically, washing process is similar to conventional wafer Wafer Backside Cleaning technique of the prior art after the steady film, at this
In embodiment, using routine techniques, the wafer for being coated with photoresist coat is comprehensively cleaned, to ensure crystal round fringes
Photoresist be cleaned, obtain preferable photoresist coat.Wherein, after the steady film time of washing process for 5~
10s, rotating speed is 800~1200 revs/min, and acceleration is 5000rpm/s.
As shown in the S4 in Fig. 1, step 4 is carried out), spin drying is carried out to the wafer, the photoresist coat is only
It is formed at the upper surface of the wafer and without moistening mobilization force.
Specifically, after by above-mentioned processing, in addition to the process of free drying is carried out to photoresist coat, separately
Outside, the process slowed down also is included after dehydrated.Wherein, the time of free drying is 5~15s, preferably 8~12s, and rotating speed is
1500~2500 revs/min, preferably 1800~2200 revs/min, acceleration is 10000rpm/s, and the time of deceleration is 0.1
~0.8s, acceleration is 5000rpm/s.
As an example, in step 2) the steady film of carry out before washing process and step 3) the steady film of progress after in washing process
In at least one, in addition to the step of aiding in liquid is coated to photoresist coat sprinkling simultaneously.
Specifically, before namely described steady film the step of washing process and after the steady film the step of washing process, can
With during wafer rear washing is carried out, while the sprinkling coating aids in liquid, so as to be further ensured that the photoresist
The stability of coat.
Washing rotating speed before steady film is more than the washing rotating speed after steady film, therefore the wafer lateral margin pre-wetted before steady film is handled
With advance washing process so that the residual photoresistance after steady film is just not easy to adhere to the lateral margin of wafer.
It should also be noted that, in the present invention, in addition to being improved to the processing step of photoresist coating procedure, also
Hardware device is improved, in the present embodiment, the cleaning ozzle for carrying out wafer rear cleaning improved, so as to ensure
The cleaning fluid that self-cleaning ozzle is sprayed can be very good absorption on wafer, that is, increase the adhesion of cleaning fluid, reduce centrifugation
Power.
As an example, step 2) in, using the first cleaning ozzle to being coated with the crystal round fringes of the photoresist coat
Washing process before the steady film is carried out, wherein, between the ozzle mouthful edge and the wafer lateral margin of the first cleaning ozzle
Distance is 0.1~10mm, and the angle between the injection direction and the crystal column surface of the first cleaning ozzle is 45~60 °,
To increase the adhesion between first cleaning fluid that is sprayed of cleaning ozzle and the crystal round fringes, and reduction is located at institute
State the centrifugal force of the cleaning fluid of crystal round fringes.
As an example, the liquid in a diameter of 0.6~0.8mm of the first cleaning ozzle, the first cleaning ozzle
Flow velocity is 90~100L/min.
Specifically, step 2) in steady film before in washing process, ozzle is cleaned to it and is improved, so as to add current
Prewashed effect before thickness stabilization processes, is mainly the increase in the adhesion between cleaning fluid and wafer, reduce its from
Mental and physical efforts, thereby may be ensured that and fully reacted between cleaning fluid and photoresist, and then remove unwanted photoresist to greatest extent,
Specific practice is to reduce the distance between cleaning ozzle and crystal round fringes, adds gradient, make cleaning ozzle and wafer it
Between become more vertical, the diameter of increase cleaning ozzle, and increase the flow velocity of cleaning fluid outflow, so as to ensure that wafer lateral margin
Photoresist is fallen by thoroughly cleaning, certainly, in other embodiments, can also to being improved one of in above-mentioned improvement,
Can also be that two or more improvements therein are improved, with saving improvement cost, this is according to actual demand
And design, it is not particularly limited herein.In the present embodiment, the distance between the first cleaning ozzle and the wafer lateral margin
For 5mm, the angle between the first cleaning ozzle and the wafer is 50 °, and described first cleans a diameter of of ozzle
Flow rate of liquid in 0.7mm, the first cleaning ozzle is 95L/min
As an example, step 3) in, using the second cleaning ozzle to being coated with the crystal round fringes of the photoresist coat
Washing process after the steady film is carried out, wherein, between the ozzle mouthful edge and the wafer lateral margin of the second cleaning ozzle
Distance is 40~50mm, and the angle between the injection direction and the crystal column surface of the second cleaning ozzle is 30~40 °, institute
A diameter of 0.9~1.2mm of the second cleaning ozzle is stated, the flow rate of liquid of the second cleaning ozzle is 45~85L/min.
Specifically, in step 3) after the steady film that carries out during washing process, can be using conventional ozzle to wafer side
The photoresist of edge is cleaned, and the distance between described second cleaning ozzle and described wafer lateral margin are 45mm, and described the
Angle between two cleaning ozzles and the wafer is 35 °, a diameter of 1.1mm of the second cleaning ozzle, and described second is clear
The flow rate of liquid for washing ozzle is 50L/min.Certainly, in the step, the first cleaning ozzle as described above can also be carried out similar
Improvement, to adapt to the demand cleaned to crystal round fringes photoresist comprehensively.
Specifically, in the present embodiment, according to above-mentioned condition selection, the technique in its specific photoresist coating procedure is walked
Rapid and design parameter is：1) first to being started the time together, select as 1s, now speed is 0rpm, and acceleration is 10000rpm/
s；2) carry out wafer and pre-wet processing, the time is 5s, rotating speed is 1500rpm, and acceleration is 10000rpm/s, while progress the
The technique that once sprinkling coating auxiliary liquid is handled；3) residence time is set, selected as 1s, now speed is 0rpm, is accelerated
Spend for 10000rpm/s；4) the step of second of sprinkling coating auxiliary liquid is handled is carried out, the time is 0.3s, and rotating speed is 100rpm,
Acceleration is 10000rpm/s；5) rotary coating of photoresist is carried out, the time is 2s, and rotating speed is 4000rpm, and acceleration is
30000rpm/s, wherein, step 4) and step 5) it is preferably to carry out simultaneously；6) buffer time is set, and the time is 1s, rotating speed
For 100rpm, acceleration is 30000rpm/s；7) the first rotating speed processing is carried out, the time is 2.5s, and rotating speed is 2200rpm, accelerated
Spend for 10000rpm/s；8) the second main rotating speed processing is carried out, the time is 1s, and rotating speed is 1200rpm, and acceleration is
10000rpm/s；9) washing process before steady film is carried out, the time is 5s, and rotating speed is 1200rpm, and acceleration is 10000rpm/s, together
When sprinkling coating auxiliary liquid；10) film stabilizing treatment technique is carried out, the time is 25s, and rotating speed is 1200rpm, and acceleration is
10000rpm/s；11) washing process after steady film is carried out, the time is 5s, and rotating speed is 1000rpm, and acceleration is 5000rpm/s, together
When sprinkling coating auxiliary liquid；12) centrifugal dehydration treatment is carried out, the time is 10s, and rotating speed is 2000rpm, and acceleration is
10000rpm/s；13) deceleration processing is carried out, the time is 0.5s, and rotating speed is 0rpm, and acceleration is 5000rpm/s.
In summary, the method that the present invention provides crystal edge defect in a kind of improvement photoresist coating procedure, including following step
Suddenly：Photoresist coating is carried out to coat rotating speed, to form the photoresist coat with preset thickness in the upper of pending wafer
Surface；Carry out the processing of multisection type main rotating speed to the photoresist coat, and the main rotating speed processing of the multisection type includes the
The processing of one rotating speed is less than the second rotating speed processing that first rotating speed is handled with rotating speed, and makes the photoresist coat described
Moistening is kept during main rotating speed processing；In the first stage of second rotating speed processing, to being coated with the photoresist
The back side of the wafer of coat carries out washing process before steady film, is coated with moistening the edge of the wafer and removing the photoresist
Layer overflows to the part of the crystal round fringes after application；In the second stage of second rotating speed processing, to the photoresist
Coat carries out thickness stabilization processes；Washing process after steady film is carried out to the back side of the wafer, to remove the light
Photoresist coat is diffused into the part of the crystal round fringes in thickness stabilization processes；And the wafer is carried out to be spin-dried for certainly
Dry, the photoresist coat is only formed at the upper surface of the wafer and without moistening mobilization force.Pass through such scheme, sheet
The method of crystal edge defect in the improvement photoresist coating procedure of invention, passes through the technological process to processing and cleaning ozzle equipment
Improvement, can effectively remove the photoresist of the crystal round fringes in photoresist coating procedure, and avoid thus caused surface lack
Sunken generation；The present invention's improves the method for crystal edge defect in photoresist coating procedure, can cleaning wafer side to greatest extent
The photoresist of edge, maximum can be to 100% removing, and the yield of product is increased by 1~2%.So, the present invention effectively overcomes existing
There is the various shortcoming in technology and have high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (11)
1. a kind of improve the method for crystal edge defect in photoresist coating procedure, it is characterised in that comprises the following steps：
1) photoresist coating is carried out to coat rotating speed, to form the photoresist coat with preset thickness in pending wafer
Upper surface；
2) the main rotating speed of multisection type is carried out to the photoresist coat to handle, and the main rotating speed processing of the multisection type includes the
The processing of one rotating speed is less than the second rotating speed processing that first rotating speed is handled with rotating speed, and makes the photoresist coat described
Moistening is kept during main rotating speed processing；In the first stage of second rotating speed processing, to being coated with the photoresist
The back side of the wafer of coat carries out washing process before steady film, is coated with moistening the edge of the wafer and removing the photoresist
Layer overflows to the part of the crystal round fringes after application；In the second stage of second rotating speed processing, to the photoresist
Coat carries out thickness stabilization processes；
3) washing process after steady film is carried out to the back side of the wafer, it is stable in thickness to remove the photoresist coat
The part of the crystal round fringes is diffused into when changing processing；And
4) spin drying is carried out to the wafer, the photoresist coat is only formed at the upper surface of the wafer and do not had
Moisten mobilization force.
2. according to claim 1 improve the method for crystal edge defect in photoresist coating procedure, it is characterised in that described many
The main rotating speed processing of segmentation is also handled comprising reduction of speed, is implemented between first rotating speed processing and the processing of the second rotating speed, wherein,
The rotating speed of the reduction of speed processing is less than the rotating speed that first rotating speed is handled, and makes the photoresist coat at the reduction of speed
Moistening is kept during reason.
3. according to claim 1 improve the method for crystal edge defect in photoresist coating procedure, it is characterised in that in step
2) washing process and step 3 before the steady film of carry out) the steady film of carry out after at least one of washing process, it is in addition to simultaneously right
The step of photoresist coat sprinkling coating auxiliary liquid.
4. according to claim 1 improve the method for crystal edge defect in photoresist coating procedure, it is characterised in that step 1)
Specific steps include：
1-1) upper surface of pending wafer is carried out pre-wetting processing, and first time spray is carried out to the wafer upper surface simultaneously
Spill the processing of coating auxiliary liquid；
Photoresist 1-2) is placed in the wafer upper surface and rotary coating is carried out with the coating rotating speed, is preset with being formed to have
The photoresist coat of thickness.
5. according to claim 4 improve the method for crystal edge defect in photoresist coating procedure, it is characterised in that step 1-
1) and step 1-2) between, be also included in step 1-1) after the completion of stop preset time, and to the upper of the wafer after stop
Surface carries out the step of second of sprinkling coating auxiliary liquid is handled, wherein, the wafer stops during carrying out the stop
Rotate, and carry out the rotating speed for spraying coating auxiliary liquid processing for the second time less than the progress first time sprinkling coating auxiliary liquid
The rotating speed of processing.
6. according to claim 5 improve the method for crystal edge defect in photoresist coating procedure, it is characterised in that described pre-
If the time is 0.5~1.5s；The time for carrying out second of sprinkling coating auxiliary liquid processing is 0.1~0.5s, and rotating speed is 50
~150 revs/min.
7. according to claim 4 improve the method for crystal edge defect in photoresist coating procedure, it is characterised in that step 1-
1) time that described pre-wets processing and first time sprinkling coating auxiliary liquid processing is 2~7s, rotating speed is 1000~
2000 revs/min；Step 1-2) the rotary coating time be 0.5~5s, rotating speed be 3000~5000 revs/min.
8. according to claim 1 improve the method for crystal edge defect in photoresist coating procedure, it is characterised in that described the
The time of one rotating speed processing is 2~5s, and rotating speed is 1800~2800 revs/min；Before the steady film time of washing process be 3~
5s, rotating speed is 1000~1500 revs/min；The time of the thickness stabilization processes is 15~25s, and rotating speed is 1000~1500
Rev/min；The time of washing process is 5~10s after the steady film, and rotating speed is 800~1200 revs/min.
9. according to the method for crystal edge defect in improvement photoresist coating procedure according to any one of claims 1 to 8, its feature
It is, step 2) in, the steady film is carried out to the crystal round fringes for being coated with the photoresist coat using the first cleaning ozzle
Preceding washing process, wherein, the distance between ozzle mouthful edge of the first cleaning ozzle and described wafer lateral margin for 0.1~
10mm, the angle between the injection direction and the crystal column surface of the first cleaning ozzle is 45~60 °, to increase described the
Adhesion between cleaning fluid and the crystal round fringes that one cleaning ozzle is sprayed, and reduction is positioned at the crystal round fringes
The centrifugal force of the cleaning fluid.
10. according to claim 9 improve the method for crystal edge defect in photoresist coating procedure, it is characterised in that described
Flow rate of liquid in a diameter of 0.6~0.8mm of first cleaning ozzle, the first cleaning ozzle is 90~100L/min.
11. according to claim 9 improve the method for crystal edge defect in photoresist coating procedure, it is characterised in that step
3) in, the crystal round fringes for being coated with the photoresist coat are carried out after the steady film at washing using the second cleaning ozzle
Reason, wherein, the distance between ozzle mouthful edge of the second cleaning ozzle and described wafer lateral margin are 40~50mm, described the
Angle between the injection direction and the crystal column surface of two cleaning ozzles is 30~40 °, the diameter of the second cleaning ozzle
For 0.9~1.2mm, the flow rate of liquid of the second cleaning ozzle is 45~85L/min.
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| CN201710652795.8A CN107255912B (en) | 2017-08-02 | 2017-08-02 | Improve the method for crystal edge defect in photoresist coating procedure |
| CN201810676932.6A CN108828898B (en) | 2017-08-02 | 2017-08-02 | Method for improving edge defects in photoresist coating process |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107930917A (en) * | 2017-12-21 | 2018-04-20 | 上海华力微电子有限公司 | A kind of photoresist coating system and method |
| CN110444466A (en) * | 2018-05-06 | 2019-11-12 | 长鑫存储技术有限公司 | Method for cleaning wafer and device in photoresist coating process |
| CN110874018A (en) * | 2018-09-04 | 2020-03-10 | 长鑫存储技术有限公司 | Photoresist coating equipment and coating method |
| CN111604236A (en) * | 2020-06-11 | 2020-09-01 | 沈阳芯源微电子设备股份有限公司 | Gluing method for thinned wafer |
| CN111722472A (en) * | 2020-06-24 | 2020-09-29 | 沈阳芯源微电子设备股份有限公司 | Process for improving coating effect of polyimide material |
| CN115327854A (en) * | 2022-05-26 | 2022-11-11 | 华虹半导体(无锡)有限公司 | Method for improving edge wind whirl generation in spin coating photoresist on wafer |
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| CN114054288B (en) * | 2020-07-31 | 2023-07-18 | 中国科学院微电子研究所 | Control method of glue applicator, control system of glue applicator and glue applicator |
| CN112885712B (en) * | 2021-01-21 | 2022-04-26 | 长鑫存储技术有限公司 | Method and apparatus for cleaning wafer edge |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4732785A (en) * | 1986-09-26 | 1988-03-22 | Motorola, Inc. | Edge bead removal process for spin on films |
| US5750317A (en) * | 1994-09-16 | 1998-05-12 | Advanced Micro Devices, Inc. | Process and system for flattening secondary edgebeads on resist coated wafers |
| CN1892445A (en) * | 2005-06-30 | 2007-01-10 | 台湾积体电路制造股份有限公司 | Semiconductor wafer processing method and crystal edge residue removal system |
| CN102019266A (en) * | 2009-09-17 | 2011-04-20 | 中芯国际集成电路制造(上海)有限公司 | Coating method for coating material |
| CN103838087A (en) * | 2012-11-26 | 2014-06-04 | 无锡华润上华科技有限公司 | Method for thickening photoresist |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2843134B2 (en) * | 1990-09-07 | 1999-01-06 | 東京エレクトロン株式会社 | Coating device and coating method |
| CN102486618A (en) * | 2010-12-02 | 2012-06-06 | 中芯国际集成电路制造(北京)有限公司 | Method for development of water-resistant surface coating-free immersed photoresist |
| CN103365075B (en) * | 2012-03-26 | 2017-06-23 | 上海华虹宏力半导体制造有限公司 | A kind of photoetching technological method that can eliminate crystal column surface lathe work |
-
2017
- 2017-08-02 CN CN201710652795.8A patent/CN107255912B/en active Active
- 2017-08-02 CN CN201810676932.6A patent/CN108828898B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4732785A (en) * | 1986-09-26 | 1988-03-22 | Motorola, Inc. | Edge bead removal process for spin on films |
| US5750317A (en) * | 1994-09-16 | 1998-05-12 | Advanced Micro Devices, Inc. | Process and system for flattening secondary edgebeads on resist coated wafers |
| CN1892445A (en) * | 2005-06-30 | 2007-01-10 | 台湾积体电路制造股份有限公司 | Semiconductor wafer processing method and crystal edge residue removal system |
| CN102019266A (en) * | 2009-09-17 | 2011-04-20 | 中芯国际集成电路制造(上海)有限公司 | Coating method for coating material |
| CN103838087A (en) * | 2012-11-26 | 2014-06-04 | 无锡华润上华科技有限公司 | Method for thickening photoresist |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107930917A (en) * | 2017-12-21 | 2018-04-20 | 上海华力微电子有限公司 | A kind of photoresist coating system and method |
| CN110444466A (en) * | 2018-05-06 | 2019-11-12 | 长鑫存储技术有限公司 | Method for cleaning wafer and device in photoresist coating process |
| CN110874018A (en) * | 2018-09-04 | 2020-03-10 | 长鑫存储技术有限公司 | Photoresist coating equipment and coating method |
| CN111604236A (en) * | 2020-06-11 | 2020-09-01 | 沈阳芯源微电子设备股份有限公司 | Gluing method for thinned wafer |
| CN111722472A (en) * | 2020-06-24 | 2020-09-29 | 沈阳芯源微电子设备股份有限公司 | Process for improving coating effect of polyimide material |
| CN115327854A (en) * | 2022-05-26 | 2022-11-11 | 华虹半导体(无锡)有限公司 | Method for improving edge wind whirl generation in spin coating photoresist on wafer |
Also Published As
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|---|---|
| CN107255912B (en) | 2018-08-14 |
| CN108828898A (en) | 2018-11-16 |
| CN108828898B (en) | 2021-06-04 |
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Effective date of registration: 20181009 Address after: 230601 room 630, Hai Heng mansion 6, Cui Wei Road, Hefei economic and Technological Development Zone, Anhui Patentee after: Changxin Storage Technology Co., Ltd. Address before: 230000 room 526, Hai Heng mansion 6, Cui Wei Road, Hefei economic and Technological Development Zone, Anhui Patentee before: Ever power integrated circuit Co Ltd |