CN102496558B - The surface treatment method of semiconductor crystal wafer, avoid the method that photoresist remains - Google Patents
The surface treatment method of semiconductor crystal wafer, avoid the method that photoresist remains Download PDFInfo
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- CN102496558B CN102496558B CN201110379499.8A CN201110379499A CN102496558B CN 102496558 B CN102496558 B CN 102496558B CN 201110379499 A CN201110379499 A CN 201110379499A CN 102496558 B CN102496558 B CN 102496558B
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Abstract
A kind of surface treatment method of semiconductor crystal wafer, for semiconductor crystal wafer being carried out surface process with developer solution before resist coating, including: rotary spraying developer solution, infiltration, by deionized water rinsing, drying and other steps.Wherein, the developer solution that surface is used for during acid-base neutralization reacts in processing developer solution used and subsequent technique is identical.The present invention has simple to operate, and the advantage being easily achieved, and in terms of the photoresist residual in removing deeper groove, has significant effect.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly to one, semiconductor crystal wafer is carried out surface
The method processed, to reach the purpose avoiding photoresist to remain.
Background technology
The essence of photoetching is to perform etching the silicon chip with ion implanting later patch structure replication
On.Common photoetching is such that first spin coated photoresist on silicon chip, i.e. photoresist layer (PR),
Then light shield is passed through to photoresist layer (PR) with certain specific light source (such as ultraviolet light, electron beam or X-ray)
Carry out selective exposure, eventually pass developing process and the figure on light shield is transferred to crystal column surface, still protect
Stay photoresist layer on silicon chip (PR) to be the formation of figure and protect its region covered.Follow-up can lead to
The figure of photoresist layer (PR) is transferred to substrate surface by overetch technique, it is also possible to removing photoresistance
Part carries out ion implanting and reaches to change carrier concentration and the purpose of conduction type.
Photoresist divides positive photo glue and negative photoresist, for eurymeric photoresist, through exposure irradiation
Part molecular scission can occur, after alienation generate band carboxyl organic acid, then with alkaline development
Liquid carries out acid-base neutralization reaction, will generate the salt that dissolubility is extremely strong, and undosed part can be with development
Liquid reaction generates the big molecule group that dissolubility is extremely low, and semiconductor lithography process utilizes the two dissolubility exactly
Greatest differences figure on light shield is transferred to crystal column surface.
In actual production process, the photoresist after exposure reacts it carrying out acid-base neutralization with developer solution
After, if there being part photoresist to remain in the region that need not photoresist protection, follow-up etching can be stopped.
Along with reducing of the critical size in integrated circuit technology, the photoresist of residual is for subsequent etching processes
Harmful effect will be increasing, in this photoresist remains in undersized deeper groove, and locates
In the residual of bottom portion of groove, its impact is the most fatal.And existing detection instrument is difficult to detect recessed
The residual light photoresist of trench bottom, the most final yield test result just can reflect its impact, and this is just
Large batch of wafer loss, greatly waste of manpower, material resources, financial resources can be caused.
Summary of the invention
It is an object of the invention to provide the surface treatment method of a kind of semiconductor crystal wafer, preferably guarantee wafer
The bottom portion of groove on surface does not has the residual of photoresist.
In order to achieve the above object, the invention provides the surface treatment method of a kind of semiconductor crystal wafer, for
Before resist coating, with developer solution, semiconductor crystal wafer is carried out surface process.
Optionally, process developer solution used in described surface reacts for acid-base neutralization in follow-up developing process
In developer solution be identical.
Optionally, when described developer solution processes, carry out the mode of surface process for wafer with developer solution
Carrying out spraying developer solution, it includes carrying out being repeated several times of rotary spraying-infiltration-rotary spraying-infiltration.
Optionally, carry out surface processing with developer solution is to carry out under clean room environment.
Optionally, after carrying out surface process with developer solution, it is carried out by deionized water.
Optionally, it is carried out being under clean room environment by deionized water, by deionized water to described crystalline substance
Circle carries out rotary spraying.
Optionally, after being carried out by deionized water, carry out wafer rotating drying and drying and processing.
Present invention also offers a kind of method avoiding photoresist to remain in manufacture of semiconductor, including aforementioned
All semiconductor crystal wafers surface process；
After surface processes, carry out photoresist coating, exposure, development.
The present invention has simple to operate, and the advantage being easily achieved, and the light in avoiding deeper groove
Photoresist residual aspect, has significant effect.
Accompanying drawing explanation
Fig. 1 be semiconductor crystal wafer of the present invention carry out surface process be embodied as step.
Detailed description of the invention
The present invention is first with developer solution, crystal column surface to be carried out surface process before resist coating, removes
The acid-base neutralization of some photoresists after post-exposure of crystal column surface and developer solution can affect neutralization in reacting
The material of reaction effect, it is ensured that the acid-base neutralization of photoresist after follow-up developer solution and exposure reacts and thoroughly has
Effect, is not result in that the place that need not photoresist protection at crystal column surface also has photoresist to remain.
Particularly when process crystal column surface is to some deep grooves of Customer design, through repeatedly
Etching, after deposit, it is the narrowest that the groove of crystal column surface can become, if bottom portion of groove exists some thing
Matter may affect in the developing process developer solution removal effect for the photoresist after exposure, if in
If face exists photoresist residual, along with integrated circuit critical size is more and more less, it is reduced to tens nanometers
In the case of Ji, in these grooves, photoetching glue residue is fatal on the impact of product quality.
Even and if simply the trickleest photoetching glue residue, for follow-up technique, especially etch, right
It is subsequently formed special pattern to have a great impact, if blocking etching to form special pattern, it is possible to make
The electric property of device lost efficacy.
Further, under tens nano level critical dimensional standards, these trickle photoetching glue residues are half-and-half
The impact of conductor device performance highlights the most all the more.
Inventor solves to try the when of this problem multiple method in practice, such as with the development of excess
Liquid develops, or other certain methods, but effect is not thorough, can only remove a part.
Summing up through practical thinking repeatedly, the method for the present invention is the various solutions that inventor tests
In one can reappear and thorough effective method.
And the present invention is particularly with avoiding there is photoresist residual side in some deeper grooves of crystal column surface
Face, more more effective than usual method.
The present invention is embodied as step as it is shown in figure 1, include:
S1. the semiconductor crystal wafer passing through multiple tracks technique is obtained.
S2. with the developer solution in acid-base neutralization reacts in subsequent technique, crystal column surface is processed.
S3. by deionized water, crystal column surface is carried out.
S4. crystal column surface is dried process.
S5. resist coating.
S6. expose.
S7. develop.
S8. detect.
Understandable, below in conjunction with the accompanying drawings for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from
The detailed description of the invention of the present invention is described in detail.
Concrete, embodiments of the invention are as a example by common positive photo glue.Positive photo glue is a kind of
Organic mixture, can be slightly soluble in alkaline-based developer before exposure.During exposure, corresponding to light shield transmission region
Positive photo glue through light source irradiate after, big molecular scission therein, shape after remaining organic group alienation
Become the organic acid of band carboxyl, meet alkaline-based developer and will generate the salt that solubility is extremely strong, anti-at acid-base neutralization
Should be removed easily after terminating.Otherwise, the photoresist in the light tight region of light shield does not has illuminated mistake,
It reacts with the tetramethylammonium hydroxide in developer solution and generates what dissolubility drastically reduced, the most fairly insoluble
Organic macromolecule group.Based on this deliquescent difference, after acid-base neutralization reaction terminates, spend from
Son cleans just can obtain the positive photoresistance figure similar to light mask image at crystal column surface.
And if the Cucumber of crystal column surface consumes the alkali ion of some developer solutions so that developer solution
Alkali ion concentration reduce, the photoresist causing crystal column surface to expose light reacts with developer solution acid-base neutralization
Not exclusively, after have impact on developer solution and exposure, the acid-base neutralization of photoresist reacts, final crystal column surface photoetching
Glue is not cleaned up completely.Particularly certain of the deeper bottom portion of groove that some sizes of crystal column surface are less
If a little materials have impact on the alkali ion concentration of the developer solution arriving its bottom portion of groove, it is possible to recessed
Trench bottom remains some photoresists, stops that etching forms specific figure in subsequent etching processes.
Therefore crystal column surface was first processed before resist coating by the present invention with developer solution, it is ensured that soda acid
Neutralize reaction not affected by crystal column surface Cucumber, finally guarantee at crystal column surface, more especially
The residual of photoresist is not had in groove.
Elaborate a lot of detail in the following description so that fully understanding the present invention.But this
Bright can implement to be much different from alternate manner described here, those skilled in the art can be not
Doing similar popularization in the case of running counter to intension of the present invention, therefore the present invention is not embodied as by following public
Restriction.
Concrete, the detailed implementation process of the present embodiment is as follows:
Perform step S1: obtain the semiconductor crystal wafer passing through multiple tracks technique.
Semiconductor crystal wafer described here is generally the to be patterned Silicon Wafer possessing certain dielectric layer, it is possible to
Think gaas wafer, or other semiconductor crystal wafer.General after several operation, crystal column surface
Rough groove figure will be formed, according to the design needs of client, some groove of crystal column surface
Can be deep especially, and, under tens nano level critical dimensional standards, these grooves are likely to can be the narrowest
Narrow.
Meanwhile, this kind possesses the rough wafer of certain dielectric layer, after some Shi Qian road technique terminates,
Carrying out photoetching process again through over cleaning, some is directly to carry out photoetching process after the certain dielectric layer of deposit
, in general, this wafer can directly carry out photoresist coated technique.
Perform step S2: with the developer solution in acid-base neutralization reacts in subsequent technique, crystal column surface is entered
Row processes.
Utilize developer solution that crystal column surface is processed.The mode processed is right while spraying developer solution
Wafer rotates, and then infiltrates, then rotary spraying, then infiltrates, after being repeated several times by, then under carrying out
Procedure.Carry out the repeated whole process of rotary spraying-infiltration-rotary spraying-infiltration, preferably
Time is 60s (including time and the infiltrating time of rotary spraying).
Certainly, in addition to the method for spin coated developer solution, it would however also be possible to employ scanning coating developer solution
Mode reaches identical purpose.
Because developer solution is alkalescence, so in fact utilizing developer solution that crystal column surface is carried out surface process, main
To neutralize some acidic materials of crystal column surface exactly, prevent the acidic materials of crystal column surface at follow-up soda acid
Neutralize in reaction and consume the alkali ion in developer solution so that the alkali ion concentration of developer solution weakens,
Thus thorough not to the removal effect of photoresist, finally guarantee to need not photoresist protection at crystal column surface
Place do not have photoresist to remain.
Preferably, this step is carried out in common semiconductor toilet.
Perform step S3: by deionized water, crystal column surface is carried out.
Known, with alkaline-based developer, crystal column surface is carried out rotary spraying, infiltrate and enter by deionized water
Row cleans, and is present to ensure that what follow-up acid-base neutralization reacted is carried out completely, it should avoid crystal column surface as far as possible
Stained, so after utilizing deionized water that wafer is carried out rotary spraying cleaning, wafer need to be carried out
Rotate and dry.
Preferably, this step, in common semiconductor toilet, uses the deionized water of normal temperature to be carried out.
Wafer, for rotating wafer while spraying deionized water, is finally rotated by the mode cleaned
Dry.
Perform step S4: crystal column surface is dried process.
After crystal column surface being carried out rotary spraying developer solution and deionized water in step above, need into
Row rotates and dries, and now the material of the developer solution of crystal column surface, deionized water and some solubilities is
It is removed.But for the resist coating technique of subsequent wafer surface, the aridity of crystal column surface and
Hydrophobicity directly affects the adhesiveness of photoresist and crystal column surface.Thus, it is necessary to advance at resist coating
Row is dried and processes.
In the present embodiment, after preferred mode is for drying, wafer is dried and cools down, guaranteeing
The drying property of crystal column surface and hydrophobicity.
Generally speaking, what the rotating technics of step S2 to S4 can link up is enterprising at same slewing
OK, developer solution and deionized water spray from different pipelines and spraying equipment respectively.Wherein from rotation
Spraying developer solution, infiltration, it is flushed to perform drying technique by deionized water, is all in toilet's room temperature
Carry out at 22 DEG C, be preferably 97 seconds total time.
Execution step S5: resist coating.
Photoresist coated technique is to obtain one layer of photoresistance at crystal column surface by the way of preferred rotary spraying
Layer.In order to improve the adhesion of photoresistance and crystal column surface, one layer of HMDS (six can be deposited before being coated with photoresistance
Methyl two silicon amine).Known, after spin coated obtains photoresist layer, in order to allow the anti-etching of its or resistance
The ability of gear ion penetration is higher, it will usually photoresist layer is carried out soft baking and cooling.
Embodiment is the baking being carried out certain time specified temp by thermal-radiating mode on hot plate,
It is then delivered on cold drawing cool down, enters back into next process exposure afterwards.
Perform step S6: exposure.
In the present embodiment, photoresist is positive photoresist.In order to the figure on light shield is preferably replicated
To crystal column surface, after being accurately directed at wafer in litho machine, the light source of litho machine can be through light
Covering the photoresist layer to crystal column surface and carry out selective exposure, the photoresist layer that light shield transmission region is corresponding is being exposed
There is a kind of photochemical reaction, big molecular scission therein after light, after remaining molecule alienation, form band
The Acidic organic matter of carboxyl, spreads, generally for reducing photochemical reaction, the standing wave effect caused, in exposure
After wafer is sent into hot plate and carries out the baking of certain time and specified temp；The light tight region of light shield is corresponding
Photoresist layer keep constant.
Perform step S7: development.
Developer solution is pH value 14, and concentration is the tetramethylammonium hydroxide water solubility highly basic of 2.38%, actual raw
During product, can directly with 2.38% finished product, it is also possible to concentrate solution be diluted to 2.38%.
Visualization way can use spin coated, it is also possible to scanning coating mode, in order to allow exposure after
Photoresist is completely dissolved, it is necessary to allow developer solution be totally submerged photoresist time enough.In the present embodiment
Use the visualization way of multiple rotary spraying submergence, while guaranteeing that acid-base neutralization reflection is thoroughly carried out,
Also the uniformity of crystal column surface critical size is ensured.Known, after photoresist and developer solution reaction, also need
Deionized water cleaning wafer surface to be used, while being removed by unwanted photoresist, after also removing development
The remaining all chemical substances of crystal column surface, finally rotate wafer and dry.
In order to improve the anti-etching of photoresist and breakdown characteristics further, after development terminates, must be to crystalline substance
Circle toasts, and removes the solvent that crystal column surface is unnecessary simultaneously, ready for entering next process.
Perform step S8: detection.
After all of smooth needle drawing layer defines, except carry out with front layer be directed at detection, critical size
Detection, is also performed to the detection of visual inspection and high-power microscope, it is ensured that the brightest before entering next process
Aobvious defect, big dust granules or significantly imaging distortion.Then etching or ion implanting could be entered
Operation.
The above, be only presently preferred embodiments of the present invention, not the present invention is made any in form
Restriction.
Although the present invention discloses as above with preferred embodiment, but and it is not used to this restriction present invention.Appoint
What those of ordinary skill in the art, without departing under technical solution of the present invention ambit, the most available
Technical solution of the present invention is made many possible variations and modification by the method for the disclosure above and technology contents,
Or it is revised as the Equivalent embodiments of equivalent variations.Therefore, every content without departing from technical solution of the present invention,
According to the technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification,
All still fall within the range of technical solution of the present invention protection.
Claims (7)
1. the surface treatment method of a semiconductor crystal wafer, it is characterised in that with development before resist coating
Liquid carries out surface process to semiconductor crystal wafer；
Carrying out the mode of surface process for wafer is carried out spraying developer solution with developer solution, it includes revolving
Turn being repeated several times of spraying-infiltration-rotary spraying-infiltration, wherein, carry out rotary spraying-infiltration-rotary spraying
The time of the repeated whole process of-infiltration is 60s, is used for neutralizing the acidic materials of crystal column surface,
Prevent alkalescence that the acidic materials of crystal column surface consume in developer solution in follow-up acid-base neutralization reacts from
Son, it is to avoid have photoresist to remain in deeper groove.
2. surface treatment method as claimed in claim 1, it is characterised in that described surface processes used
In developer solution and subsequent technique, the developer solution in acid-base neutralization reacts is identical.
3. surface treatment method as claimed in claim 1, it is characterised in that carry out surface with developer solution
Process is to carry out under clean room environment.
4. surface treatment method as claimed in claim 1, it is characterised in that carry out surface with developer solution
After process, it is carried out by deionized water.
5. surface treatment method as claimed in claim 4, it is characterised in that carry out clearly by deionized water
Washing is under clean room environment, by deionized water, described wafer is carried out rotary spraying.
6. surface treatment method as claimed in claim 5, it is characterised in that carry out clearly by deionized water
After washing, carry out wafer rotating drying and drying and processing.
7. the method avoiding photoresist to remain in a manufacture of semiconductor, it is characterised in that including:
Carry out the surface treatment method of semiconductor crystal wafer as described in any one of claim 1 to 6；
After surface processes, carry out photoresist coating, exposure, development.
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| CN106610569A (en) * | 2017-01-04 | 2017-05-03 | 上海华虹宏力半导体制造有限公司 | Method for preventing peeling of photoresist |
| CN107749392A (en) * | 2017-09-26 | 2018-03-02 | 合肥新汇成微电子有限公司 | A kind of surface treatment method of semiconductor crystal wafer |
| CN113594024B (en) * | 2021-07-30 | 2024-01-30 | 中国电子科技集团公司第四十四研究所 | Method for manufacturing metal electrode stripping adhesive film and method for manufacturing metal stripping electrode |
| CN114724932A (en) * | 2022-03-31 | 2022-07-08 | 福建省晋华集成电路有限公司 | Method for manufacturing semiconductor device |
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| CN101740334A (en) * | 2008-11-13 | 2010-06-16 | 中芯国际集成电路制造(北京)有限公司 | Photoetching pretreating method and photoetching method |
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