CN107230724A - Graphene field effect transistor and its manufacture method - Google Patents

Abstract

Present invention is disclosed a kind of manufacture method of graphene field effect transistor.Including：One glass substrate is provided；The situ cleaning glass substrate；The glass substrate is heated to 600 degree Celsius~1200 degree；Directly in a superficial growth at least graphene layer for the glass substrate；And high dielectric constant material layer is deposited on the surface of the graphene layer.

Description

Graphene field effect transistor and its manufacturing method

technical field

The invention relates to the technical field of semiconductors, in particular to a graphene field effect transistor and a manufacturing method thereof.

Background technique

Due to the high mobility of graphene, the industry has begun to apply graphene to the manufacture of semiconductor devices. At present, the manufacturing method of graphene transistor is generally to form graphene thin film on glass substrate by liquid phase coating or transfer method. However, the disadvantage of this method is that the interface between the graphene film and the glass substrate is often contaminated, which seriously affects the performance of graphene transistors. In addition, the current manufacturing methods of graphene transistors are difficult to meet the needs of large-scale applications due to complicated operations, high costs, and low yields. In view of this, there is a need to develop an improved method for fabricating graphene transistors.

Contents of the invention

The object of the present invention is to provide a graphene field effect transistor and a manufacturing method thereof, which can avoid contamination during the manufacturing process, thereby improving the performance of the graphene transistor.

In order to solve the above-mentioned technical problems, one embodiment of the present invention provides a method for manufacturing a graphene field effect transistor, comprising: providing a glass substrate; cleaning the glass substrate in situ; heating the glass substrate to 600 degrees Celsius to 1200 degrees; directly grow at least one graphene layer on the surface of the glass substrate; and form a high dielectric constant material layer on the surface of the at least one graphene layer, and the dielectric constant of the high dielectric constant material layer The range is 3.0-30.

One embodiment of the present invention provides a graphene field effect transistor, comprising: a glass substrate; at least one graphene layer, the at least one graphene layer is arranged on the surface of the glass substrate; a high dielectric constant material layer , the high dielectric constant material layer is arranged on the surface of the at least one graphene layer, and the range of the dielectric constant of the high dielectric constant material layer is 3.0-30; a source and a drain, the source and the The drain is arranged on the surface of the at least one graphene layer; and a gate is arranged on the surface of the high dielectric constant material layer.

Description of drawings

Fig. 1 is the flow chart of the manufacture method of the graphene field effect transistor provided by the present invention;

2A-2F are cross-sectional views of the device structure in the process of manufacturing the graphene field effect transistor in the present invention.

Among them, 100 substrate 102, 106, 110, 118 surface 103 glass substrate 104 dielectric layer 108 graphene layer 112 high dielectric constant material layer 114 source 116 drain 120 gate

detailed description

The graphene field effect transistor of the present invention and its manufacturing method will be described in more detail below in conjunction with schematic diagram, wherein represent preferred embodiment of the present invention, should be understood that those skilled in the art can revise the present invention described here, and still realize Advantageous effects of the present invention. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.

In the following paragraphs the invention is described more specifically by way of example with reference to the accompanying drawings. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

Please refer to Fig. 1, one embodiment of the present invention provides a kind of manufacturing method of graphene field effect transistor, comprises the following steps:

S101: providing a glass substrate;

S102: cleaning the glass substrate in situ with ozone or nickel cobalt silicon (SiCoNi);

S103: heating the glass substrate to 600-1200 degrees Celsius, so that the surface of the glass substrate exists in a molten state;

S104: growing at least one graphene layer directly on the surface of the glass substrate;

S105: Form a high dielectric constant material layer on the surface of the at least one graphene layer, and the dielectric constant of the high dielectric constant material layer ranges from 3.0 to 30. The material of the high dielectric constant material layer is, for example, Silicon nitride, silicon oxynitride, aluminum oxide, zirconium oxide, or hafnium dioxide or combinations thereof. The method of forming the high dielectric constant material layer on the surface of the at least one graphene layer includes chemical vapor deposition (Chemical Vapor Deposition), atomic deposition (Atomic Layer Deposition) or metal-organic chemical vapor deposition (Metal-Organic Chemical Vapor Deposition Epitaxy);

S106: Etching a part of the high dielectric constant material layer;

S107: Form a source electrode and a drain electrode on the surface of the graphene layer, and form a gate electrode on the surface of the high dielectric constant material layer.

In order to describe the manufacturing method of the graphene field effect transistor more specifically, please refer to FIG. 2A to FIG. 2F , and FIG. 2A to FIG. 2F are cross-sectional views of the device structure in the process of manufacturing the graphene field effect transistor in the present invention.

First, referring to FIG. 2A , a silicon layer 100 is prepared.

Next, please refer to FIG. 2B , a dielectric layer 104 with a thickness of 2 nm˜100 nm is deposited on the surface 102 of the silicon layer 100 , and the combination of the silicon layer 100 and the dielectric layer 104 forms a glass substrate 103 . The material of the dielectric layer 104 can be silicon dioxide or a high dielectric constant material, wherein the dielectric constant of the high dielectric constant material ranges from 2.0 to 30, such as silicon nitride, silicon oxynitride, aluminum oxide, zirconia, or hafnium dioxide or combinations thereof. The methods for depositing the dielectric layer 104 on the silicon layer 100 include chemical vapor deposition, atomic layer deposition or metal-organic chemical vapor deposition epitaxy. In other embodiments, the glass substrate 103 is a whole piece of glass.

Next, the glass substrate 103 is cleaned in-situ with ozone or SiCoNi, and the glass substrate 103 is heated to 600-1200 degrees Celsius so that the dielectric layer 104 of the glass substrate 103 exists in a molten state.

Next, please refer to FIG. 2C , a graphene layer 108 is directly grown on the surface 106 of the molten dielectric layer 104 , wherein the graphene layer 108 has a band gap greater than 300meV.

Please refer to FIG. 2D, a high dielectric constant material layer 112 is deposited on the surface 110 of the graphene layer 108, and the range of the dielectric constant of the high dielectric constant material layer 112 is 3.0～30, and the high dielectric constant material layer 112 Materials such as silicon nitride, silicon oxynitride, aluminum oxide, zirconium oxide, or hafnium oxide or combinations thereof. The method of depositing the high dielectric constant material layer 112 on the surface of the graphene layer 108 includes chemical vapor deposition (Chemical Vapor Deposition), atomic deposition (Atomic Layer Deposition) or metal-organic chemical vapor deposition epitaxy (Metal-Organic Chemical Vapor Deposition Epitaxy).

Next, referring to FIG. 2E , a part of the high-k material layer 112 is etched.

Next, please refer to FIG. 2F, a source electrode 114 and a drain electrode 116 are respectively formed on both sides of the etched high dielectric constant material layer 112 and the surface 110 of the graphene layer 108, and on the high dielectric constant material layer Surface 118 of 112 forms a metal gate 120 .

In the manufacturing method of the graphene field effect transistor provided by the present invention, after the glass substrate is cleaned in situ, the glass substrate is then heated to 600-1200 degrees Celsius, so that the surface of the glass substrate exists in a molten state. Due to the high flatness and isotropy of the surface in the molten state, the graphene layer can grow uniformly on the surface of the glass substrate, thereby avoiding the contact surface between the glass substrate and the graphene layer from being polluted, thereby improving the performance of graphite. Efficiency of ene field effect transistors. In addition, compared with the current manufacturing method of graphene transistors, the method provided by the present invention has simpler operation, lower cost, and higher yield, so it can meet the needs of large-scale applications.

Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and equivalent technologies thereof, the present invention also intends to include these modifications and variations.

Claims (11)

1. a kind of manufacture method of graphene field effect transistor, including：

One glass substrate is provided；

The situ cleaning glass substrate；

The glass substrate is heated to 600 degree Celsius~1200 degree；

Directly in a superficial growth at least graphene layer for the glass substrate；And

High dielectric constant material layer, and the high-k material are formed on the surface of an at least graphene layer The scope of the dielectric constant of the bed of material is 3.0~30.

2. the manufacture method of graphene field effect transistor as claimed in claim 1, it is characterised in that adopt With ozone or the nickel cobalt SiClx situ cleaning glass substrate.

3. the manufacture method of graphene field effect transistor as claimed in claim 1, it is characterised in that should High dielectric constant material layer used in material include silicon nitride, silicon oxynitride, aluminum oxide, zirconium oxide, Hafnium oxide or its combination.

4. the manufacture method of graphene field effect transistor as claimed in claim 1, it is characterised in that The step of surface of an at least graphene layer forms high dielectric constant material layer uses chemical vapor deposition Method, atom deposition method or Metalorganic Chemical Vapor Deposition are performed.

5. the manufacture method of graphene field effect transistor as claimed in claim 1, it is characterised in that also It is included in the surface of an at least graphene layer to be formed after high dielectric constant material layer, etches the high dielectric A part for constant material layer.

6. the manufacture method of graphene field effect transistor as claimed in claim 5, it is characterised in that also It is included in after the part for etching high dielectric constant material layer, on the surface of an at least graphene layer point A source electrode and a drain electrode are not formed, and form a grid on the surface of high dielectric constant material layer.

7. a kind of graphene field effect transistor, including：

One glass substrate；

An at least graphene layer, an at least graphene layer is located at the surface of the glass substrate；

One high dielectric constant material layer, high dielectric constant material layer is located at the surface of an at least graphene layer, And the scope of the dielectric constant of high dielectric constant material layer is 3.0~30；

One source electrode and a drain electrode, the source electrode are located at the surface of an at least graphene layer with the drain electrode；And

One grid, the grid is located at the surface of high dielectric constant material layer.

8. graphene field effect transistor as claimed in claim 7, it is characterised in that the glass substrate bag Containing a silicon layer and a dielectric layer, the material of the dielectric layer includes silica or high dielectric constant material.

9. graphene field effect transistor as claimed in claim 7, it is characterised in that the glass substrate is One monolithic glass.

10. graphene field effect transistor as claimed in claim 7, it is characterised in that an at least stone The energy gap of black alkene layer is more than 300meV.

11. graphene field effect transistor as claimed in claim 7, it is characterised in that the high dielectric is normal The material of number material layer includes silicon nitride, silicon oxynitride, aluminum oxide, zirconium oxide, hafnium oxide or its group Close.