CN107210584A - Tunable laser with multiple list type sections including sampling grating - Google Patents
Tunable laser with multiple list type sections including sampling grating Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06258—Controlling the frequency of the radiation with DFB-structure
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
- H01S5/1215—Multiplicity of periods
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- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
- H01S5/5027—Concatenated amplifiers, i.e. amplifiers in series or cascaded
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
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Abstract
A kind of tunable laser with the multiple list type sections for including sampling grating, the semiconductor laser main body with multiple list type laser sections is generally included, is configured as independent driving to produce the laser for a wavelength being located in each different wave-length coverages.There is sampling grating in each list type section identical screen periods and different sampling periods to produce different wavelength.Responded with temperature change, the wavelength of the light produced in each laser section is tuned to the channel wavelength in each range of channels.By optionally producing one of laser section or multiple light, one or more channel wavelengths are selected to be used for lasing and transmitting.By using the sampling grating with identical screen periods in multiple list type sections, the tunable laser of multiple sections can be more easily manufactured.
Description
The application is the part continuation application for the U.S. Patent Application No. 13/916,652 submitted on June 13rd, 2013, its
Full content is incorporated herein by reference.
Technical field
The present invention on tunable laser, especially it is a kind of there are the multiple list type sections for including sampling grating can
Tuned laser, is configured as tuning for wavelength-division multiplex (wavelength in the channel wavelength of multiple different range
division multiplexed；WDM EPON (Passive Optical Network)；PON it is tunable in)
Emitter or transceiver.
Background technology
Once optical communication network was typically the network of " point-to-point " type, including the emitter connected by optical fiber and reception
Machine.This network is relatively easily constructed, but is equipped with many optical fiber to connect multiple users.With the user with this network connection
Number increases and fiber count increases sharply, and being equipped with and manage many optical fiber becomes complicated and expensive.
By using such as optical line terminal of the transmitting terminal from network (Optical Line Terminal, OLT) to far reaching
Single " trunk (the trunk) " optical fiber of 20 kilometers or more of remote branch point, EPON solves this problem.Exploitation
One challenge of this EPON is effective capacity using trunk optical fiber, so as to transmit maximum possible on trunk optical fiber
The information of quantity.Using wavelength-division multiplex on different wave length by different optical signal multiplexers, optical fiber communication network can increase
It is added in the information content carried on single optical fiber.For example, in the EPON (WDM-PON) of wavelength-division multiplex, single trunk
The optical signal of multichannel wavelength is carried to optical branch point by optical fiber, and carries the light letter of the multichannel wavelength from optical branch point
Number, and by being directed to the signal of individual consumer or different wave length from individual consumer, branch point provides simple road
By function.In each customer location, ONT Optical Network Terminal (optical networking terminal；) or optical network unit ONT
(optical networking unit；ONU one or more channel wavelengths) are allocated to send and/or receive light letter
Number.
However, the challenge in the EPON of wavelength-division multiplex is to design a kind of network, it is allowed in any customer location
ONT Optical Network Terminal or optical network unit in use identical emitter.For the ease of matching somebody with somebody in the EPON of wavelength-division multiplex
Put and safeguard, be desired to have the ONT Optical Network Terminal/optical network unit (ONT/ of " colourless " that its wavelength can be changed or tune
ONU), such single device can be used in any ONT/ONU on EPON.Utilize the ONT/ONU of " colourless ", operator
Member, which needs only to have, can be provided in single, the general emitter or transceiver devices of any customer location.
In wavelength-division multiplex system or network such as WDM-PON, one or more tunable laser are used to be directed to light
The different wavelength of signal behavior.In these years develop a variety of different types of tunable laser, but most of quilts
Develop and connected for the backbone network of high power capacity to realize that high-performance and cost are of a relatively high.With high power capacity, the wavelength-division of long range
Multiplex system is compared, many WDM-PON apply have relatively low data rate and shorter transmission range, therefore lower-performance and
The laser of lower cost can then be met.However, when be used to cover in WDM-PON with respect to wide scope channel (for example, 16
Channel) when, the relatively low tunable laser of expense often meets with challenge.For example, by controlling the tuned expense of temperature
Relatively low distributed feedback laser, only about 0.1nm/ DEG C of wavelength change.16 channel ripples are covered using this laser
Grow the temperature range, it is necessary to 120 DEG C.
The content of the invention
Brief description of the drawings
By reading detailed description below and combining schema, these and other feature is better understood with and excellent
Point, wherein：
Fig. 1 be meet this exposure embodiment include the optical WDM communication of at least one Multi sectional tunable laser
The schematic diagram of system.
Fig. 2 be meet this exposure embodiment the wavelength-division multiplex including at least one Multi sectional tunable laser it is passive
The schematic diagram of optical-fiber network.
Fig. 3 is the schematic diagram for the Multi sectional tunable laser for meeting this exposure embodiment.
Fig. 4 is the Multi sectional tunable laser with grating in each laser section for meeting this exposure embodiment
The schematic diagram of device.
Fig. 5 A and Fig. 5 B are the running schematic diagram of the Multi sectional tunable laser shown in Fig. 4.
Fig. 6 be meet this exposure embodiment have the Multi sectional of grating and phase shift tunable in each laser section
The schematic diagram of laser.
Fig. 6 A are the wavelength spectrum and lasing point related to a section in the Multi sectional tunable laser shown in Fig. 6
Figure.
Fig. 7 be meet another embodiment of this exposure have the Multi sectional of grating and phase shift can in each laser section
The schematic diagram of tuned laser.
Fig. 7 A are the wavelength spectrum and lasing point related to a section in the Multi sectional tunable laser shown in Fig. 7
Figure.
Fig. 8 A and Fig. 8 B are the running schematic diagram of the Multi sectional tunable laser shown in Fig. 6 and Fig. 7.
Fig. 9 is the schematic diagram for the Multi sectional tunable laser with sampling grating for meeting another embodiment of this exposure.
Figure 10 A and Figure 10 B are the laser area with sampling grating for the offer phase shift for meeting this exposure another embodiment
The schematic diagram of section.
Figure 11 A to Figure 11 C are the signal of the example of the manufacture method of the Multi sectional tunable laser with sampling grating
Figure.
Embodiment
The tunable laser with the multiple list type sections for including sampling grating for meeting embodiment described herein is led to
Often include semiconductor laser main body, with multiple list type laser sections, be configured as independent driving with different each
The laser of multiple wavelength is produced in individual wave-length coverage.Sampling grating in each list type section have identical screen periods and
The different sampling periods is to produce different wavelength.Responded with temperature change, the ripple of the light produced in each laser section
The long channel wavelength being tuned in each wave-length coverage.By optionally produce laser section it is one or more in
Light, selects one or more channel wavelengths to be used for lasing and transmission.By using in multiple list type sections have same light
The sampling grating of grid cycle, can more easily manufacture Multi sectional tunable laser.
For example, it can be used in tunable transmitter with the adjustable of the multiple list type sections for including sampling grating
Humorous laser, produce and combine with the optical signal for the channel wavelength for producing selection and/or in the optical sender of multiplexing it is multiple not
The optical signal of cochannel wavelength.In one kind application, the tunable laser with multiple list type sections is used for wavelength division multiplexed light
In optical sender or transceiver in system.For example, the tunable laser with multiple list type sections is used for wavelength-division
In tunable transmitter or transceiver in multiplex system, such as the ONT Optical Network Terminal in the EPON of wavelength-division multiplex
(ONT) it is that ONT Optical Network Terminal/optical network unit selects suitable transmission channel wavelength or in optical network unit (ONU).As an example
Son, the tunable laser with multiple list type sections is additionally operable to the optical line terminal in the EPON of wavelength-division multiplex
(OLT), to provide multiple optical signals of different channels wavelength.
" channel wavelength " used herein refers to the wavelength related to optical channel and includes the certain wave on centre wavelength periphery
It is long.In one example, standard is such as International Telecommunication Union (International Telecommunication Union, ITU)
It is that ITU-T high density wavelength-division multiplex (DWDM) grid (grid) defines channel wavelength.It is used herein " be tuned to channel ripple
It is long " refer to adjustment laser output, the laser so launched includes this channel wavelength." list type section " used herein refers to sharp
The section placed in light device along a line, another section of light penetration so from a section, and not necessarily require this
A little sections are continuous.Term as used herein " coupling " refers to the modes such as any connection, coupling, link, and " optical coupling " refers to coupling
Another element can be transferred to by closing the light so from an element.This " coupling " device not necessarily directly connects with another
Connect, and can be separated by the intermediate module or device for manipulating or changing these signals." thermal coupling " used herein refers to
Direct or indirect connection or contact between two components, cause heat to be transmitted to another component from a component.
It refer to and the optical WDM communication system 100 for meeting this exposure embodiment is show and described in Fig. 1, figure, wrap
Include one or more Multi sectional tunable laser 101.Wavelength-division multiplex system 100 includes one or more terminals 110,112, coupling
Together in trunk optical fiber or every one end in path 114, for launching on backbone optical path footpath 114 and receiving different channels wavelength
Optical signal.The terminal 110,112 of every one end of wavelength-division multiplex system 100 includes and different channels (for example, Ch.1 to Ch.n)
Related one or more emitters 120 are (for example, TX1To TXn) and receiver 122 (for example, RX1To RXn), at one or
Launch and receive the optical signal of different channels wavelength between multiple terminals 110,112.
Each terminal 110,112 includes one or more emitters 120 and receiver 122, emitter 120 and receiver
122 can separate or be integrated into a transceiver in terminal.The light multiplexing of every one end of wavelength-division multiplex system 100
The optical signal of different channels wavelength is combined and separated by device/demultiplexer 116,118.The wavelength-division-multiplexed optical signal of aggregation includes group
The channel wavelength of conjunction, carries the wavelength-division-multiplexed optical signal of this aggregation on backbone optical path footpath 14.Emitter 120 it is one or more
It can be tunable transmitter, Multi sectional tunable laser 101 can be used to be tuned to suitable channel wavelength.Therefore,
Emitter 120 is configured to general, tunable emitter, the diverse location that can be used in wavelength-division multiplex system 100 with
And the position in wavelength-division multiplex system 100 is tuned to suitable channel wavelength.
Fig. 2 is refer to, meeting one or more Multi sectional tunable laser of this exposure embodiment is used for wavelength-division multiplex
EPON 200 in emitter and/or transceiver in.The EPON 200 of wavelength-division multiplex uses wavelength-division multiplex system
System provides the optical-fiber network framework of point-to-multipoint.According to one embodiment of the EPON 200 of wavelength-division multiplex, by optical fiber,
Waveguide and/or path 214,215-1 to 215-n, at least one optical line terminal 210 are coupled in multiple ONT Optical Network Terminals (ONT)
Or optical network unit (ONU) 212-1 to 212-n.Optical line terminal 210 includes one or more multi-channel optical transceivers
102a、102b.Multi sectional tunable laser is used in ONT Optical Network Terminal/optical network unit and/or in optical line terminal 210,
To allow to tune channel wavelength, it will be described in more detail below.
Optical line terminal 210 is located at the central office (central office) of the EPON 200 of wavelength-division multiplex, light net
Network unit (ONU) 212-1 to 212-n is located at family, business or other types of customer location or management place.Branch point
Backbone optical path footpath 214 is coupled to the light path 215-1 to 215-n of separation to be coupled to each use by 213 (for example, remote nodes)
The optical network unit 212-1 to 212-n of family position.Branch point 113 includes one or more passive coupling arrangements, such as optical branching
Device (splitter) or optical multiplexer/demultiplexer.In one example, optical network unit 212-1 to 212-n is located at distance light
About 20 kilometers of road terminal 210 or the position less than 20 kilometers.
The EPON 200 of wavelength-division multiplex also includes extra node or network equipment, such as Ethernet passive optical network
Network (EPON) or gigabit passive optical network (GPON) node or device, are coupled in branch point 213 and diverse location or manage field
Optical network unit 212-1 between 212-n.A kind of application of the EPON 200 of wavelength-division multiplex is to provide optical fiber and arrived
Room (Fiber To The Home, FTTH) or fiber entering household (Fiber To The Premises, FTTP), can be across jointly
Platform transmission audio, data and/or Video service.In this application, central office is with providing these audios, data and/or video
One or more sources or network coupling.
In the EPON 200 of wavelength-division multiplex, different optical network unit 212-1 to 212-n is allocated different
Channel wavelength is for launching and receive optical signal.In one embodiment, the use of EPON 200 of wavelength-division multiplex is different
Wavelength range transmits downlink and uplink optical signal with relative optical line terminal 210, with avoid the signal that is received on same optical fiber and
Interference between the transmission signal of back-reflection.For example, L- wave bands (for example, about 1565 to 1625 nanometers) are used to come from light
The downlink transfer of line terminal 210, and C- wave bands (e.g., from about 1530 to 1565 nanometers) are used for optical line terminal 210
Row transmission.Up and/or down channel wavelength generally corresponds to International Telecommunication Union (ITU) grid.In one example, upstream wavelength
100GHz ITU grids are directed at, and ITU grid of the downstream wavelength with respect to 100GHz is slightly displaced from.
Therefore, optical network unit 212-1 to 212-n is allocated different channel wavelengths in L- wave bands and in C- wave bands.
Transceiver or receiver in optical network unit 212-1 to 212-n are configured as receiving L- wave bands (for example, λL1、λL2、…
λLn) in optical signal at least one channel wavelength.Transceiver or emitter in optical network unit 212-1 to 212-n
Transmitting C- wave bands are configured as (for example, λC1、λC2、…λCn) in optical signal at least one channel wavelength.Other wavelength or ripple
Long-wave band is also in the range of system and method as described herein.
Branch point 213 is by the descending wavelength-division-multiplexed optical signal from optical line terminal 210 (for example, λL1、λL2、…λLn) solution
Multiplexing, for the channel wavelength of separation is transferred into respective optical network unit 212-1 to 212-n.Or, branch point 213
Descending wavelength-division-multiplexed optical signal is provided to each optical network unit 212-1 to 212-n, and each optical network unit 212-1 is extremely
212-n is separated and the distributed optical channel wavelength of processing.Individual other optical signal is encrypted avoid not to particular optical network list
Eavesdropping on the optical channel of member distribution.Branch point 213 also believes the up light from each optical network unit 212-1 to 212-n
Number combination or be multiplexed, using on the backbone optical path footpath 214 to optical line terminal 210 as up wavelength-division-multiplexed optical signal (for example,
λC1、λC2、…λCn) transmission.
Optical network unit 212-1 one embodiment includes laser 216 and photodetector (photodetector) 218.
Laser 216 is used for the up channel wavelength (λ of distributionC1) transmission optical signal.Photodetector 218 is, for example, photodiode,
With the down channel wavelength (λ of distributionL1) receive optical signal.The Multi sectional that laser 216 includes meeting embodiment described herein can
Tuned laser, is configured as example being tuned to the channel wavelength of distribution by changing the temperature of laser 216.This reality
Apply duplexer (diplexer) 217 and photodetector 218 that the optical network unit 212-1 of example also includes coupling with laser 216
And the C+L band filters 219 coupled with duplexer 217, it is allowed to optical network unit 212-1 receives L- band channel wavelength
(λL1) and optical network unit 212-1 transmitting C- band channel wavelength (λC1).Optical network unit 212-1 also includes temperature control system
System, for controlling the temperature of laser 216 and laser driving circuit for driving laser 216.
Optical line terminal 210 is configured as producing different channels wavelength (for example, λL1、λL2、…λLn) multiple optical signals,
And optical signal set is combined into the descending wavelength-division-multiplexed optical signal carried on trunk optical fiber or path 214.Each optical link is whole
Multi-channel optical transceiver 202a, 202b is held to include multi-channel optical emitter sub-assembly (TOSA) 220, to produce and combine many letters
The optical signal of road wavelength.Optical line terminal 210 is additionally configured to the up wavelength-division-multiplexed optical signal that will be carried on trunk path 214
Different channels wavelength is separated into (for example, λC1、λC2、…λCn) optical signal, and receive separation optical signal.Therefore, Mei Yiguang
Line terminal multi-channel optical transceiver 202a, 202b include multi-channel optical receiver sub-assembly (ROSA) 230, to separate and connect
Receive the optical signal of multiple channel wavelengths.
One embodiment of multi-channel optical emitter sub-assembly 220 includes the array of laser 222, by respective radio frequency
Data-signal (TX_D1 to TX_Dm) is modulated to produce respective optical signal.Laser 222 includes multi-region described herein
Section tunable laser.The various modulation techniques modulation laser 222 that can be used including external modulation and directly modulate.Recovery
With the such as array waveguide grating of device 224 (arrayedwaveguide grating；AWG), by each different down channel ripples
Length is (for example, λL1、λL2、…λLm) optical signal combination.Channel ripple is arrived by the thermal tuning laser 222 for changing laser 222
It is long.Optical sender sub-assembly 220 also includes temperature control system, for controlling the temperature of laser 222 and multiplexer 224 to tie up
Hold desired wavelength accuracy or accuracy.
In shown embodiment, optical line terminal 210 further comprises multiplexer 204, for that will be received and dispatched from multichannel
The multiplexing optical signal of multi-channel optical emitter sub-assembly 220 in device 202a and many in other multichannel transceiver 202b
The multiplexing optical signal multiplexing of channel optical sender sub-assembly, to produce descending set wavelength-division-multiplexed optical signal.
One embodiment of multi-channel optical receiver sub-assembly 230 includes demultiplexer 232, for separating each up letter
Road wavelength is (for example, λC1、λC2、…λCn).The array of the such as photodiode of photodetector 234 detects the up letter of each separation
The optical signal of road wavelength and the data-signal (RX_D1 to RX_Dm) that reception is provided.In shown embodiment, optical line terminal
210 further comprise demultiplexer 206, for up wavelength-division-multiplexed optical signal to be demultiplexing as into the first and second wavelength division multiplexed lights
Signal, is provided to each multi-channel optical receiver sub-assembly in each transceiver 202a, 202b.Optical line terminal 210 is also
Including duplexer 208, between trunk path 214 and multiplexer 204 and demultiplexer 206, such trunk path 214 is carried
Uplink and downlink channel wavelength.Transceiver 202a, 202b also include other components, such as laser driver, trans-impedance amplifier
(transimpedance amplifier；TIA) and control interface, for launching and receiving optical signal.
In one example, each multi-channel optical transceiver 202a, 202b are configured as launching and receive 16 channels, so
The EPON 200 of wavelength-division multiplex supports 32 descending L- band channels wavelength and 32 up C- band channels wavelength.Ripple
One example of the EPON 200 of point multiplexing uses on-off keying (on-off keying) as modulation scheme, operation in
1.25G bauds (baud).Other data rates and modulation scheme can also be used.
As described above, the channel wavelength that the channel wavelength of uplink and downlink is crossed on 100GHz International Telecommunication Union's grid
Scope.For example, each transceiver 202a, 202b cover 16 channels in the L- wave bands for optical sender sub-assembly
Wavelength and for 16 channel wavelengths in the C- wave bands of photoreceiver sub-assembly, such transceiver 202a, 202b are collectively covered
32 channels.Therefore, multiplexer 204 is by 16 channels from transceiver 202a and 16 from another transceiver 202b
Channel is combined, and demultiplexer 206 answers the wavelength-division that the wavelength-division-multiplexed optical signal of 32 channels is separated into two 16 channels
Use optical signal.For the ease of the use of multiplexer 204 and demultiplexer 206, the pars intermedia of the scope of channel wavelength in this scope
Part can skip channel.According to an example of the multi-channel optical transceiver used in the EPON 200 of wavelength-division multiplex, phase
The wavelength accuracy or accuracy of prestige are ± 0.05 nanometer, and desired operating temperature is between -5 and 70 DEG C.
Fig. 3 is refer to, Multi sectional tunable laser 300 is described more fully, can be used in wavelength-division multiplex system example
In such as EPON of wavelength-division multiplex.Multi sectional tunable laser 300 includes semiconductor laser main body 302, in rear end
Face (back facet) extends between 304 and front end face 306.Laser bodies 302 include multiple list types can thermal tuning swash
Light device section 310-1 to 310-n, from rear end face 304, end face 306 is arranged as " list type (in line) " forward.Below will be more detailed
Carefully it is been described by, for example, through use different chamber length and/or optical grating construction, each list type laser area
Section 310-1 to 310-n is configured as producing laser in each different wave-length coverages.Each list type laser section 310-
1 to 310-n adjoins with the list type laser sections of one or more adjoinings, and such laser bodies 302 are formed as single-piece.Change
Yan Zhi, on the same chip co-manufactured list type laser section 310-1 to 310-n.
Although illustrated embodiment represents the laser section 310-1 to 310-n with almost identical length, laser section
The one or more of 310-1 to 310-n have different length.Although illustrated embodiment represents three laser sections, multi-region
Section tunable laser can include the list type laser section of other numbers.
Each list type laser section 310-1 to 310-n can be thermally tuned, so each wave-length coverage wherein it
In one, the wavelength X according to selectionsThe channel wavelength of such as selection, laser is launched from the front end face 306 of laser bodies 302.Can
The laser that tuned laser 300 is launched is predominantly located at the wavelength X of selectionsThe light quilt at wavelength beyond place, the channel of selection
Minimize to improve performance (for example, reduction noise).The laser that tunable laser 300 is launched also is filtered, to remove essence
Whole wavelength beyond part or selection wavelength.
Laser driver circuit 320 electrically connects each laser section 310-1 to 310-n, each sharp for independent driving
One of the laser section 310-1 to 310-n of light device section 310-1 to 310-n to produce selection and positioned at each wavelength
In the range of laser.Laser driver circuit 320 includes the circuit for being configured as driving semiconductor laser, enough by application
Driving or operating current (Iop) to trigger lasing.For example, in optical sender, laser driver circuit 320 utilizes telecommunications
Number such as rf-signal modulation laser section 310-1 to 310-n is each first, the modulation light of the channel wavelength to produce selection
Signal.
Pass through the higher drive current higher than threshold current (for example, 12 milliamperes), it is sufficient to cause selection or active laser
Lasing in device section, one of the laser section 310-1 to 310-n of selection is (that is, with the channel wavelength including selection
Wave-length coverage laser section) driven.One or more of other laser section 310-1 to 310-n are closed, or
Person is driven according to the relatively low driving current less than the threshold current for causing lasing.For example, active laser device section is with after
Laser section between end face 404 is closed.When the laser penetration from active laser device section, active laser device section
Laser section between front end face 306 is driven with this relatively low driving current, sufficiently transparent to reduce loss, but is not had
Lasing.
Temperature control system 330 is thermally coupled in each laser section 310-1 to 310-n, for each laser of thermal tuning
Device section 310-1 to 310-n is to the wavelength selected in each wave-length coverage.With temperature change respond, using can be tuned to choosing
The arbitrary disposition or technology of standing wave length, thermal tuning laser section 310-1 to 310-n.Temperature control system 330 include one or
Multiple temperature control equipments such as TEC (thermoelectric coolers；TEC) and/or resistance heater, use
In the temperature for changing each laser section, it is sufficient to change the wavelength produced in that laser section.It can use same
Temperature control equipment uses the individual temperature control equipment with each laser section 310-1 to 310-n thermal couplings, change
Each laser section 310-1 to 310-n temperature.Temperature control system 330 also includes temperature sensor and/or wavelength monitoring
Device and control circuit.For example, circuitorder temperature control equipment design temperature is controlled, so as to respond tunable laser
The monitoring wavelength that monitoring temperature or response tunable laser 300 at 300 are launched.
As illustrated, for example, laser section 310-1 is driven and tuned to produce range of wavelengths lambda1–λxInterior
The laser of one channel wavelength, laser section 310-2 is driven and tuned to produce range of wavelengths lambdax–λyAn interior letter
The laser of road wavelength, and laser section 310-n are driven and tuned to produce range of wavelengths lambday–λzAn interior channel
The laser of wavelength.Therefore, one of driving and thermal tuning section 310-1 to 310-n, Multi sectional tunable laser are passed through
The 300 channel wavelength λ for producing and launching the selection from z channel wavelengthss.By using with each different wavelength models
The multisequencing formula enclosed can thermal tuning laser section 310-1 to 310-n, tunable laser 300 can be in less temperature model
The channel wavelength of wider range is tuned in enclosing.
One has in the example of 16 channels, and Multi sectional tunable laser 300 includes 3 list type laser areas
Section, each wave-length coverage each covers about 4 nanometers and including at least five channel wavelength.Although wavelength with temperature drift is usual
It is that the wavelength of each laser section can be changed about 0.1nm/ DEG C in the function of material property, an example.Therefore,
Using the same temperature ranges stated of about 40 DEG C of Δ, in each different wave-length coverages of C- wave bands, each laser section should
This is tuned to about 5 or 6 different channel wavelengths.
As shown in Figure 4, for example with distributed feedback (distributed feedback；DFB) laser is similar, multi-region
One embodiment of section tunable laser 400 is using different optical grating constructions to produce the laser of each different wavelength.It is many
Section tunable laser 400 includes semiconductor laser main body 402, can thermal tuning laser section with multiple list types
410-1 is to 410-3, including each grating section 414-1 to 414-3 along semiconductor active region 412-1 to 412-3.Partly lead
Body active region 412-1 to 412-3 includes multiple quantum well active regions or other gain medias, can launch and cross over wavelength
The light spectral of scope and the light amplification that gain media can be will reflect back into.Grating section 414-1 to 414-3 has grating
Structure (for example, screen periods, refractive index and length), produces the light in each range of channels.For example, grating section
414-1 to 414-3 includes the known Bragg-grating structure used in diffraction or distributed feedback laser, in cloth
By by the light distributed feed-back of Bragg reflection at glug wavelength.
As illustrated, each grating section 414-1 to 414-3 has different knots corresponding from each different wave-length coverages
Structure (for example, different screen periods).In shown example, the first grating section 414-1 in first laser device section 410-1
It is configured as reflecting λ1–λ5The second grating in light in wave-length coverage at bragg wavelength, second laser section 410-2
Section 414-2 is configured as reflecting λ6–λ10Light in wave-length coverage at bragg wavelength, and the 3rd laser section 410-
The 3rd grating section 414-3 in 3 is configured as reflecting λ11–λ16Light in wave-length coverage at bragg wavelength.Laser area
Section 410-1 to 410-3 is thermally tuned, to change the bragg wavelength and selection excitation wavelength of respective wave-length coverage internal reflection.
It is used as the reflection in grating section 414-1 to 414-3 and the result of feedback, although each laser section 410-1
Occur lasing, laser outflow laser section 410-1 to 410-3 and effective laser cavity (laser cavity) in 410-3
It is longer than active laser section.Because the front end face 406 for lasing need not reflect, front end face 406 includes anti-reflective
Penetrate (anti-reflective；AR) coating, such as reflectivity with below about 1% reflectance factor.Therefore, the laser of selection
Laser produced by one of device section 410-1 to 410-3 is sent from front end face 406.When laser section has enough
During reflectivity, rear end face 404 also includes ARC.In other embodiment, rear end face 404 is included with least about 80%
High reflection (the highly reflective of reflectivity；HR) coating, so as to reflect most laser to front end face 406.No matter
Which kind of situation, rear end face 404 allows a part of laser penetration rear end face 404 for monitoring.In other embodiment, when first swash
Light device section 410-1 and/or second laser section 410-2 and non-active or when being closed, penetrate the light of rear end face 404
It is not enough to for monitoring purposes.
The running of the embodiment of Multi sectional laser 400 is shown in more detail in Fig. 5 A and Fig. 5 B.In order to select this
First wave length range lambda in individual example1–λ5In channel wavelength λ2(Fig. 5 A), higher driving current (IOPH) it is applied to first
Laser section 410-1, and relatively low driving current (IOPL) it is applied to other laser section 410-2,410-3.With
First laser device section 410-1 to be driven, first laser device section 410-1 temperature is provided so that first laser device area
Section 410-1 is thermally tuned the channel wavelength λ for selection2.The light produced in first laser device section 410-1 is by the first grating region
Section 414-1 reflections, and in first laser device section 410-1 untill there is lasing.Then, the channel wavelength of selection
λ2The laser at place spreads out of first laser device section 410-1 and launched from front end face 406.Relatively low driving current is in by driving
(IOPL) other sections 410-2,410-3, with selected channel wavelength X2These sections of laser penetration when, damage can be reduced
Consumption.In order to select first wave length range lambda1–λ5In other channel wavelengths, can by change temperature further tune it is tunable
Laser 400.
In order to select second wave length range lambda6–λ10In channel wavelength λ8(Fig. 5 B), higher driving current (IOPH) applied
It is added to second laser section 410-2, relatively low driving current (IOPL) it is applied to other laser sections 410-1,410-3.
Or, the laser section 410-1 between active laser device section 410-2 and rear end face 404 is closed.With second laser
Section 410-2 is driven, and second laser section 410-2 temperature is set so that second laser section 410-2 is warm
It is tuned as the channel wavelength λ of selection8.The light produced in second laser section 410-2 is anti-by the second grating section 414-2
Penetrate, and in second laser section 410-2 untill there is lasing.Then, the channel wavelength λ of selection8Place swashs
Light spreads out of second laser section 410-2 and launched from front end face 406.By with relatively low driving current (IOPL) drive it
He is section 410-1,410-3, with the channel wavelength λ of selection8Laser penetration these sections, it is possible to decrease loss.In order to select
Second wave length range lambda6–λ10In another channel wavelength, can further tune tunable laser 400 by changing temperature.
By similarly drive with the laser section 410-3 of thermal tuning the 3rd, it is also an option that wavelength range λ11–λ16In letter
Road wavelength.
As fig. 5 a and fig. 5b, driven and in active laser section, lasing occurring according to selected wavelength, still
Because light spreads out of the two ends of lasing section, laser cavity effectively extends between rear end face 404 and front end face 406.Therefore,
The reflections affect laser performance of grating from non-active section.
In one embodiment, the laser section 410-1 to 410-3 in Multi sectional tunable laser 400 has difference
Length.Those skilled in the art judge for tune each various lasers section 410-1 to 410-3 performance (for example,
Efficiency and threshold current) length.The laser section 310-1 of different length is provided to 310-n, can also reduce has from non-
The back-reflection of source range (for example, second section 410-2 and the 3rd section 410-3 shown in Fig. 5 A) is tunable to Multi sectional to swash
The influence of the mode stability of light device 400.In one example, first laser device section 410-1 has 300 microns of length, the
Dual-laser device section 410-2 has 400 microns of length, and the 3rd laser section 410-3 has 500 microns of length.
Although the advantage of the embodiment of the Multi sectional tunable laser 400 shown in Fig. 4 is without expansion temperature range
Wavelength tuning range can be expanded, similar with the grating in distributed feedback laser, grating section 414-1 to 414-3 can be with
Cause degradation modes.The presence of these degradation modes causes multi-mode running, uncertain pattern or moding, sometimes
It is referred to as mode degeneracy (mode degeneracy).
The Multi sectional tunable laser 600,700 of other embodiment shown in Fig. 6 and Fig. 7 uses different grating knots
Structure, these optical grating constructions are provided the phase shift of laser and operated with the monotype of suppression mode degeneracy and the selected wavelength of offer.One
In embodiment, phase shift is almost the bragg wavelength (λ of grating sectionB) place laser pi/2 optical phase shift because Bradley lattice wave
Long λBThe pi/2 phase shift at place, which is equal in optical grating construction, increases Λ/2=λB/(4ne) section, so also referred to as a quarter
The phase shift of wavelength or λ/4, wherein Λ is the cycle of grating, neFor the effective refractive index of the waveguide with grating.It is used herein
The optical shift of " λ/4 phase shift " laser for referring to same phase be about pi/2 or equal parts, mode degeneracy is adequately suppressed to provide
At bragg wavelength or the running of neighbouring monotype.Term " λ/4 phase shift " is it is not essential that accurately corresponding with λ/4 or pi/2
Phase shift, the monotype running that is accurately located at bragg wavelength, or the phase place change of grating in itself.Term " λ/4 phase shift "
Also without the phase shift of single λ/4, but multiple less scattered phase shifts for being equal to the phase shift of λ/4 can be included (for example, two
The phase shift of λ/8).Although representative embodiment refers to the phase shift of λ/4, the Multi sectional tunable laser of other embodiment can be provided
Other phase shifts of monotype running can be provided.
By including pi/2 phase shift section in grating, Multi sectional tunable laser 600 shown in Fig. 6 provides the phase of λ/4
Move.Multi sectional tunable laser 600 includes laser bodies 602, with " the sequence between rear end face 604 and front end face 606
Multiple laser section 610-1 to 610-3 of row " extension.Laser section 610-1 to 610-3 is included along semiconductor active region
Domain 612-1 to 612-3 backward grating section 614-1 to 614-3 and forward direction grating region section 615-1 to 615-3.By at one
Grating is overturn the phase shift of λ/4, backward light are introduced in 180 ° (that is, increasing the section of Λ/2), the laser reflected between grating section
Grid region section 614-1 to 614-3 and forward direction grating region section 615-1 to the phase shift section 616-1 to 616-2 between 615-3 provide pi/2
Pattern displacement.
In addition to grating is overturn into 180 ° at phase shift section 616-1 to 616-3, backward grating section 614-1 is extremely
614-3 and forward direction grating region section 615-1 to 615-3 can be also separated by the blank section without grating.Utilize phase shift section
616-1 to 616-3 separates backward grating section 614-1 to 614-3 with forward direction grating region section 615-1 to 615-3, can produce
Distributed bragg reflector mirror (DBR) similar functions, so penetrate sharp chamber and are in just in each laser section of lasing.It is shown
In embodiment, backward grating section 614-1 to 614-3 is long to grating region section 615-1 to 615-3 than before, so that in each laser
The higher reflectivity of the backward offer of device section.Those skilled in the art is relative to section 615-1 to the 615-3 choosings of forward direction grating region
Backward grating section 614-1 to 614-3 length is selected, the balance between efficiency and mode stability is used as.In this embodiment,
Rear end face 604 and front end face 606 are respectively provided with ARC.
The grating stiffness of coupling of grating section is in 1-4 scope in Multi sectional tunable laser 600, is particularly located in
In 2-3 scope." grating stiffness of coupling " used herein is the numerical value without unit, is described generally as coupling parameter κ (one
As with centimetre negating cm-1Measurement) it is multiplied by length l.In some embodiments, each different grating section is (for example, 614-1,615-
1st, 614-2,615-2,614-3,615-3) also there is different stiffness of couplings to improve performance.
As shown in the wavelength spectrum 650 in Fig. 6 A, unless suppressed degradation modes by introducing the phase shift of λ/4, otherwise highest reflects
Rate is at the bragg wavelength of peak value, but lasing appears in one or two degeneration lasing mould that dotted line 654 is marked
At formula.By providing the phase shift of λ/4 into 610-3 in each laser section 610-1, Multi sectional tunable laser 600 suppresses
Single excitation wavelength (lasing at degeneration excitation mode 654, and locking bragg wavelength indicated by arrow 652
Wavelength), so as to provide monotype running.As described above, for each laser section 610-1 to 610-3 Bradley
Lattice wave length (thus excitation wavelength 652) changes with temperature change.
Although the embodiment of the Multi sectional tunable laser 600 shown in Fig. 6 is in each multiple list type laser sections
Interior offer monotype running, two separate in the grating in itself each section of interior manufacture phase shift needs grating and meet with manufacture
Problem.By providing the section (that is, no-raster section) without grating, but the phase of optical grating construction does not have any change, Fig. 7
Shown Multi sectional tunable laser 700 provides the phase shift of λ/4 in laser.Multi sectional tunable laser 700 includes laser
Device main body 702, with multiple laser section 710-1 to 710-3, " sequence " prolongs between rear end face 704 and front end face 706
Stretch.Laser section 710-1 to 710-3 includes the backward grating section 714-1 along semiconductor active region 712-1 to 712-3
To 714-3, no-raster section 716-1 to 716-3 and forward direction grating region section 715-1 to 715-3.
Backward grating section 714-1 to 714-3 and forward direction grating region section 715-1 to 715-3 grating for each other " same to phase ",
Length between the backward section forward direction grating region of no-raster section 716-1 to 716-3 coverings, otherwise will be with to miss screen periods
The same phase of screen periods of backward and forward direction grating region section.Therefore, no-raster section 716-1 to 716-3 has with grating section not
With effective refractive index because no-raster section 716-1 to 716-3 rear to grating section 714-1 to 714-3 and forward direction grating
Section 715-1 misses extension on screen periods to a considerable amount of between 715-3, so effectively providing scattered phase-shifted region
Section.Therefore, no-raster section 716-1 to 716-3 provides the phase shift of λ/4, it is not necessary to backward grating section 714-1 to 714-3 and before
To grating section 715-1 to the change of the actual raster phase between 715-3, and need not backward and forward direction grating region Duan Dan
Solely be formed as with different screen periods.
By being initially formed rear to grating section 714-1 to 714-3 with forward direction grating region section 715-1 between 715-3
Continuously, it is uniform that there is the grating for expecting screen periods, part grating (for example, by chemical etching) is then removed, nothing is formed
Grating section 716-1 to 716-3.The offer phase of λ/4 is provided in U.S. Patent number 6,608,855 and 6,638,773
The example of the forming method of the no-raster structure of shifting and this no-raster structure, above-mentioned data is all merged in one as this paper
Point.
In this embodiment, backward grating section 714-1 to 714-3 is long to grating region section 715-1 to 715-3 than before, nothing
Grating section 716-1 to 716-3 is shorter than backward grating section 714-1 to 714-3 and ratio is preceding to grating region section 715-1 to 715-3
It is long.Therefore, backward and forward direction grating region section as operated as distributed bragg reflector mirror (that is, rear mirror and outgoing mirror), with
Individual lasing cavity is formed in each lasing section 710-1 to 710-3.In other words, longer backward grating section 714-1 is extremely
714-3 provides enough reflectivity to be operated as rearview mirror, and shorter forward direction grating region section 715-1 to 715-3 provides foot
Enough reflectivity cause lasing and also allow laser emitting to be operated as outgoing mirror.Because backward grating section provides foot
Enough reflectivity, rear end face 704 is not required to highly-reflective coating to be coated.In this embodiment, rear end face 704 and front end face 706
It is coated with cloth ARC.
In one example, backward grating section 714-1 to 714-3 has about 150 microns of length, forward direction grating region section
715-1 to 715-3 has about 50 microns of length, and no-raster section 716-1 to 716-3 has about 100 microns of length.
For example, each grating is about 0.2 micron, and there is backward grating section 750 gratings and forward direction grating region section to have
250 gratings.Other sizes and configuration are also possible to and belonged in the range of this exposure.
As shown in Fig. 7 A wavelength spectrum 750, unless suppressed degradation modes by introducing the phase shift of λ/4, highest reflectivity goes out
At the bragg wavelength of present peak value, but lasing is at one or two degeneration excitation mode indicated by dotted line 754.
In this embodiment, no-raster section 716-1 to 716-3 provides the phase shift of approximate λ/4, suppress degeneration lasing mode 754 with
And be locked at the single excitation wavelength indicated by arrow 752, the bragg wavelength in peak value or be slightly displaced from.Although swashing
Ejected wave length 752 is not precisely located at the bragg wavelength of peak value, and no-raster section 716-1 to 716-3 provides enough phase shifts
Degenerated with suppression mode, cause monotype to operate.As described above, for each laser section 710-1 to 710-3 Prague
Wavelength (thus excitation wavelength 752) is varied with temperature and changed.
The running of the embodiment of Multi sectional tunable laser 600,700 is shown in more detail in Fig. 8 A and Fig. 8 B.With
Above-mentioned running related to Fig. 5 B Fig. 5 A is similar, by driving suitable laser section and setting the appropriate temperature for thermal tuning
Degree, selects a channel wavelength.As shown in Figure 8 A, for example, by applying higher driving current (IOPH), driving correspondence
Laser section, such as with including channel wavelength λ2Wave-length coverage (for example, λ1–λ5), select a channel wavelength λ2。
Relatively low driving current (IOPL) be applied between other laser sections and/or active laser device section and rear end face
Any laser section is closed.In one example, higher driving current (IOPH) it is about 40 milliamperes, and relatively low drive
Streaming current (IOPL) it is about 6 milliamperes.As corresponding laser section is driven, temperature is set so that corresponding laser
Device section is thermally tuned as the selected channel wavelength X in wave-length coverage2。
As shown in 8B figures, by driving corresponding laser section, with including channel wavelength λ8Wave-length coverage (example
Such as, λ6–λ10), then design temperature is with thermal tuning to that wavelength X8, different channel wavelength λ can be selected8.As illustrated,
In these embodiments, by above-mentioned forward and backward grating section, in the individual lasing cavity only formed in lasing section
Given wavelength is selected lasing occur.Therefore, lasing cavity does not extend into the rear end face and front end face of these Multi sectional tunable laser.
In other embodiment, between each laser section of Multi sectional tunable laser 600, such as first laser device
Section 610-1 and second laser section 610-2 and second laser section 610-2 and the 3rd laser section 610-3 it
Between extra phase shift section can be provided.From non-active laser section (for example, second shown in Fig. 8 A and the 3rd laser
Section) grating reflection feedback to active laser device section (for example, first laser device section shown in Fig. 8 A), cause pattern
The problem of stability.Therefore, extra phase shift is provided between laser section (that is, except the phase-shifted region in laser section
Beyond section) performance of laser can be improved.The phase-shift phase that these extra phase shift sections are provided depends on other design ginsengs
The length of numerical example such as lasing section.
Electron beam Writing Technology is used to produce complicated grating in Multi sectional tunable laser 600,700, but this
Plant manufacturing process slow and expensive.Fig. 9 is refer to, another embodiment of Multi sectional tunable laser 900 includes sampling grating
Section 914-1 to 914-3, each list type laser section 910-1 formed in semiconductor laser main body 902 is extremely
In 910-3.Whole laser section 910-1 is into 910-3, and sampling grating section 914-1 to 914-3 has identical grating week
Phase (Λg), but different sampling period (Λs1、Λs2、Λs3).Because using identical screen periods, more detail below
The simplified manufacturing process of ground description.
In Multi sectional tunable laser 900, along the semiconductor active region 912-1 in semiconductor laser main body 902
To 912-3 formation sequence formulas laser section 910-1 to 910-3.Semiconductor active region 912-1 to 912-3 includes multiple amounts
Sub- trap active region or other gain medias, can launch the light spectral for crossing over wave-length coverage and can will reflect back into increasing
The light amplification of beneficial medium.When driving current is applied to each laser section, sampling grating section 914-1 to 914-3
With produce each wave-length coverage in light optical grating construction and parameter (for example, screen periods, the sampling period, refractive index and
Length).Multi sectional tunable laser 900 also includes rear end face 904 and front end face 906, for emitting laser section 910-1
The laser produced into 910-3 each one.Similar to the above embodiments, rear end face 404 has ARC or high reflection
Coating, and front end face 906 have ARC.
Sampling grating section 914-1 to 914-3 each includes periodic optical grating construction 916-1 to 916-3, is adopted by each
Sample grating section 914-1 provide Different sampling period (Λ into 914-3s1、Λs2、Λs3) white space 918-1 to 918-3
Separation.Each sampling grating section 914-1 to 914-3 also has different dutycycles (duty cycle).Dutycycle is one
The length of optical grating construction and the ratio in sampling period are (for example, L in sampling periodg1/Λs1).The example of these parameters can be light
Grid cycle ΛgFor 240 nanometers, sampling period Λs1、Λs2And Λs3Respectively 6.1,6.7 and 5.3 microns, and dutycycle is
50%.
In shown example, the first sampling grating section 914-1 in first laser device section 910-1 is configured as reflection
λ1–λ5The second sampling grating section 914-2 in the light of bragg wavelength in wave-length coverage, second laser section 910-2
It is configured as reflecting λ6–λ10The 3rd in the light of bragg wavelength in wave-length coverage, and the 3rd laser section 910-3
Sampling grating section 914-3 is configured as reflecting λ11–λ16The light of bragg wavelength in wave-length coverage.Laser section
910-1 to 910-3 is thermally tuned to change the reflected bragg wavelength and selection excitation wavelength in each wave-length coverage.
Therefore, the embodiment of Multi sectional tunable laser 900 can be operated according to the same way of above-described embodiment.
Although illustrated embodiment represents the Multi sectional tunable laser with three laser section 910-1 to 910-3
900, but Multi sectional tunable laser 900 can have the laser section 910-1 to 910-3 of other numbers.List type swashs
Light device section 910-1 to 910-3 is also without neighbouring as shown in the figure.Multi sectional tunable laser 900 also includes other sections
(for example, between laser section or at laser end), such as providing gain is used to amplify in laser area
Other gain sections of the light produced in section.
As illustrated in figs. 10 a and 10b, the embodiment of the Multi sectional tunable laser 1000,1000 ' with sampling grating is also
The phase shift of laser is provided the single-mode operation for selecting wavelength is provided with suppression mode degeneracy.As described above, phase shift is sampling grating
Bragg wavelength (the λ of sectionB) place laser pi/2 optical phase shift, the phase shift of also referred to as λ/4.For example by sampling grating
The sampling period is shifted in section, the phase shift of λ/4 can be obtained in sampling grating section.As shown in Figure 10 A, by swashing
At least one optical grating construction 1016a is extended into half of sampling period in the sampling grating section 1014 of light device section 1010, multi-region
One embodiment of section tunable laser 1000 provides the phase shift of λ/4.In sampling grating section 1014, the sampling period is in extension
Optical grating construction 1016a before and after it is identical.As shown in Figure 10 B, by the sampling grating section 1014 by laser section 1010
Optical grating construction 1016 between at least one white space 1018a extend half of sampling period, the Multi sectional of another embodiment
Tunable laser 1000 ' provides the phase shift of λ/4.In sampling grating section 1014, white space of the sampling period in extension
It is identical before and after 1018a.
It can use and write simpler process to manufacture the Multi sectional tunable laser with sampling grating than electron beam
Device 900,1000,1000 '.By shifting the substrate grating pattern (base grating pattern) with screen periods,
The continuous substrate grating with screen periods is formed at least one semiconductor layer of semiconductor laser main body.Then, pass through
Multiple sampled lights are formed on sampling grating pattern of the transfer with the sampling period, the substrate grating at least one semiconductor layer
Grid region section.For example, using holographic lithography to use photosensitive or Other substrate materials formation substrate grating pattern and sampling grating
Pattern.Holographic lithography includes that the ultraviolet for being exposed for the Other substrate materials to form pattern or other radiation can be changed, for example
Use the known photoetching technique for being used to manufacture Prague or diffraction grating in semiconductor laser.In other embodiment, pass through
Holographic exposure formation substrate grating and sampling grating section, such as using being used to manufacture Prague in known semiconductor laser
Or phase mask during diffraction grating.
Figure 11 A to Figure 11 C are refer to, the system of the Multi sectional tunable laser including sampling grating is described more fully
Make an example of method.As shown in Figure 11 A, semiconductor laser main body 1102 includes form active region 1112 multiple half
Conductor layer 1104,1106,1108, for example, meet known distribution reaction type (DFB) or distributed bragg reflector mirror (DBR) is partly led
Body diode laser.Extending along active region 1112 or parallel at least one semiconductor layer of active region 112
Sampling grating section is formed in 1108.
As shown in Figure 11 A, the first time of radiation 1120, which is exposed on to be formed in Other substrate materials 1122, has screen periods
(Λg) substrate grating pattern.The first time exposure of radiation 1120 can be holographic exposure, use known holographic lithography
Form interference figure corresponding with substrate grating pattern.Then, as shown in Figure 11 B, the substrate grating in Other substrate materials 1122
Pattern is transferred to semiconductor layer 1108, parallel with active region 1112 with screen periods (Λ to be formedg) continuous base
Back light grid 1116.Using known photoetching technique such as by the way that Other substrate materials 1122 are developed and utilized with substrate grating pattern
Semiconductor layer 1108 is etched, can be with transfer substrate grating pattern.
As shown in Figure 11 B, being exposed on for the second time in Other substrate materials 1132 for radiation 1130 forms sampling grating pattern,
There is Different sampling period (Λ in different sections corresponding from various lasers section 1010-1 to 1010-3s1、Λs2、Λs3)。
Second of exposure of radiation 1130 can also be the holographic exposure using known holographic lithography, be formed and sampling grating figure
The corresponding interference figure of case.In other embodiment, mask such as phase mask can be used to be exposed, with Other substrate materials
Middle formation grating pattern.
Then, the sampling grating pattern in Other substrate materials 1132 is transferred to semiconductor layer 1108, and is added to
To form sampling grating section 1114-1 to 1114-3 on continuous substrate grating 1116, as shown in Figure 11 C.Use known light
Lithography by Other substrate materials 1132 such as by developing and etching semiconductor layer 1108 with continuous substrate grating 1116
Upper formation sampling grating pattern, sampling grating pattern is shifted.The grating pattern migration period of sampling is eliminated into substrate
Grating 1116, so that there is sampling period (Λ into 1114-3 in each sampling grating section 1114-1s1,Λs2,Λs3) substrate
White space 1118 is formed between the fragment of grating 1116.Therefore, using simpler than electron beam write-in and less expensive two
Lithography step, can form sampling grating section 1114-1 to 1114-3.
Although two lithography steps are only used only in this example, other changes of method can also use extra step
Suddenly.This method can also use different technologies, for forming substrate grating and for forming sampling grating section.It is this
Method further comprises extra step, such as the end face (for example, using ARC) of coating semiconductor laser bodies
And offer is electrically connected to each laser section (for example, through wire bonding).
Therefore, the Multi sectional for meeting the list type laser section with sampling grating of embodiment described herein is tunable
Laser provides relatively cheap laser, and wdm applications can be tuned in relatively wide scope, and
Identical simple process can be used to be manufactured.
A kind of tunable laser for meeting one embodiment is included in the semiconductor extended between front end face and rear end face
Laser bodies.Laser bodies include multiple list type laser sections, are each configured as independent driving to produce difference
Each wave-length coverage in wavelength laser.Laser produced by one of laser section of each selection is from front end
Surface launching.Each of list type laser section includes semiconductor active region, is used to amplify each ripple by stimulated emission
The light of the wavelength of long scope, and along the sampling grating section of active region.Sampling grating section is configured as producing each
The wavelength of wave-length coverage.Sampling grating section in list type laser section has identical screen periods, and list type
Sampling grating section in laser section has the different sampling periods respectively.
Meeting a kind of optical network unit of another embodiment includes photodetector, and channel wavelength is received for receiving one
Optical signal, and tunable laser, the optical signal for launching a launch channel wavelength.Receive channel wavelength and be in L- ripples
In section or one of C- wave bands, and launch channel wavelength is in L- wave bands or C- wave bands in another.Tunable laser
Including semiconductor laser main body, extend between front end face and rear end face.Laser bodies include multiple list type lasers
Section, is each configured as being operated alone producing the laser of a wavelength in each different wave-length coverages.Each choosing
Laser produced by one of laser section selected is launched from front end face.Each of list type laser section includes half
Conductor active region, is used for the light for amplifying wavelength in each wave-length coverage by stimulated emission, and along active region
Sampling grating section.Sampling grating section is configured as producing the wavelength of each wave-length coverage.In list type laser section
There is sampling grating section the sampling grating section in identical screen periods, and list type laser section to have respectively not
The same sampling period.
Meeting a kind of wavelength-division multiplex system of another embodiment includes multiple terminals, related from each different channel wavelengths
And be configured as launching optical signal on each different channel wavelengths.It is tunable sharp that multiple terminals at least one includes at least one
Light device, is configured as being tuned to the channel wavelength of respective one.Tunable laser is included between front end face and rear end face
The semiconductor laser main body of extension.Laser bodies include multiple list type laser sections, are each configured as individually drive
The dynamic laser to produce the wavelength in each different wave-length coverages.One of laser section of each selection is produced
Raw laser is launched from front end face.Each of list type laser section includes semiconductor active region, passes through stimulated emission
For the light for the wavelength for amplifying each wave-length coverage, and along the sampling grating section of active region.Sampling grating section
It is configured as producing the wavelength of each wave-length coverage.Sampling grating section in list type laser section has identical grating
Sampling grating section in cycle, and list type laser section has the different sampling periods respectively.
A kind of production method for the Multi sectional list type tunable laser for meeting another embodiment is provided.This method bag
Include：Semiconductor laser main body, including multiple semiconductor layers, front end face and rear end face are provided, wherein semiconductor layer formation is partly led
Body active region；Continuous substrate grating, substrate grating tool are formed in the semiconductor layer parallel with active region at least one
There are screen periods；And form multiple sampling grating sections in substrate grating, wherein sampling grating section has different each
In the individual sampling period, to form multiple list type laser sections, it is configured as producing the laser of different wave length.
Although there have been described herein the principle of the present invention, it will be apparent to an ordinarily skilled person in the art that this explanation is only
Illustrate and be not intended to limit the scope of the invention.In addition to shown and description representative embodiment, in the model of the present invention
It is envisioned that other embodiments in enclosing.The modification of one of one of ordinary skill in the art or replacement are considered as in this hair
In bright scope, the scope of the present invention is not limited by claims below.
Claims (25)
1. a kind of tunable laser, including：
Semiconductor laser bodies, extend between a front end face and a rear end face, and the laser bodies include multiple sequences
Column laser section, is each configured as independent driving to produce the laser of a wavelength in each different wave-length coverages,
And the laser produced by one of the laser section of each of which selection is from the front end surface launching, and wherein sequence
Each of formula laser section includes：
Semiconductor active region, by stimulated emission, the light for amplifying the wavelength in each wave-length coverage；And
One sampling grating section, parallel with active region, the sampling grating section is configured as producing in each wave-length coverage
The wavelength；And
Sampling grating section wherein in list type laser section has identical screen periods, and wherein list type laser
Sampling grating section in device section has the different sampling periods respectively.
2. tunable laser as claimed in claim 1, it is characterised in that the sampling in each of laser section
Grating section provides a phase shift of the laser between the front end and a rear end of the sampling grating section, and wherein described phase
Shifting, which is configured to supply, is selecting the monotype of given wavelength to operate.
3. tunable laser as claimed in claim 2, it is characterised in that the phase shift provides the phase shift of the λ of laser/4.
4. tunable laser as claimed in claim 3, it is characterised in that each of laser section has different ripples
It is long.
5. tunable laser as claimed in claim 3, it is characterised in that further comprise laser section each it
Between extra phase shift section.
6. tunable laser as claimed in claim 1, it is characterised in that the multiple list type laser section includes three
Individual laser section.
7. tunable laser as claimed in claim 1, it is characterised in that described each different wave-length coverage each includes
At least five channel wavelengths.
8. tunable laser as claimed in claim 1, it is characterised in that responded with temperature change, the multiple list type
Each of laser section can be tuned, and wavelength is selected to produce one in each wave-length coverage.
9. tunable laser as claimed in claim 8, it is characterised in that described each different wave-length coverage is included at least
Five channel wavelengths, and wherein each of laser section can be tuned to described at least five using identical temperature range
One of individual channel wavelength.
10. tunable laser as claimed in claim 1, it is characterised in that described each different wave-length coverage includes C-
Channel wavelength in wave band.
11. tunable laser as claimed in claim 1, it is characterised in that the front end face and the rear end face include anti-
Reflectance coating.
12. a kind of optical network unit, including：
One photodetector, the optical signal for receiving channel wavelength, wherein the reception channel wavelength is in L- ripples
In one of section or C- wave bands；And
One tunable laser, the optical signal for launching a launch channel wavelength, wherein the launch channel wavelength is in
In another of L- wave bands or C- wave bands, the tunable laser includes semiconductor laser bodies, in a front end face and
Extend between one rear end face, laser bodies include multiple list type laser sections, be each configured as being operated alone with
Produce the laser of a wavelength in different each wave-length coverage, and each of which selection one of laser section institute
From the front end surface launching, and wherein, each of list type laser section includes the laser of generation：
Semiconductor active region, passes through stimulated emission, the light of the wavelength for amplifying each wave-length coverage；And
One sampling grating section, parallel with active region, the sampling grating section is configured as producing each wave-length coverage
The wavelength；And
The sampling grating section wherein in list type laser section has identical screen periods, and wherein list type
The sampling grating section in laser section has the different sampling periods respectively.
13. optical network unit as claimed in claim 12, it is characterised in that the sampled light of the laser section in each
Grid region section provides a phase shift of the laser between the front end and a rear end of grating section, and wherein described phase shift is configured as
Offer selects the monotype of given wavelength to operate.
14. optical network unit as claimed in claim 12, it is characterised in that responded with temperature change, laser section it is every
The wavelength of light produced by one can be tuned to the launch channel wavelength in each wave-length coverage.
15. a kind of wavelength-division multiplex system, including：
Multiple terminals are related from different each channel wavelength and be configured as launching on described each different channel wavelength
Optical signal, the multiple terminal at least one include an at least tunable laser, an at least tunable laser
It is configured as being tuned to the channel wavelength of respective one, tunable laser includes：
Semiconductor laser bodies, extend between a front end face and a rear end face, and laser bodies include multiple list types
Laser section, is each configured as being operated alone producing the laser of the wavelength in each different wave-length coverages, and
Laser produced by one of laser section of each of which selection is from the front end surface launching, and wherein list type
Each of laser section includes：
Semiconductor active region, by stimulated emission, the light for amplifying the wavelength in each wave-length coverage；And
One sampling grating section, parallel with active region, the sampling grating section is configured as producing each described wavelength model
The wavelength in enclosing；And
The sampling grating section wherein in list type laser section has identical screen periods, and wherein list type
The sampling grating section in laser section has the different sampling periods respectively.
16. wavelength-division multiplex system as claimed in claim 15, it is characterised in that the sampling of the laser section in each
Grating section provides a phase shift of the laser between the front end and a rear end of grating section, and wherein described phase shift is configured
The monotype of given wavelength is selected to operate to provide.
17. wavelength-division multiplex system as claimed in claim 15, it is characterised in that responded with temperature change, laser section
The wavelength of light produced by each can be tuned to the launch channel wavelength in each wave-length coverage.
18. wavelength-division multiplex system as claimed in claim 17, it is characterised in that the multiple terminal includes being located at wavelength-division multiplex
EPON in ONT Optical Network Terminal.
19. wavelength-division multiplex system as claimed in claim 18, it is characterised in that further comprise：
At least one optical line terminal, being configured as receiving includes the set wavelength-division-multiplexed optical signal of the channel wavelength；
At least one branch point, is coupled between optical line terminal and multiple ONT Optical Network Terminals, and branch point is configured as combining institute
State the optical signal of channel wavelength；And
One backbone optical path footpath, coupling optical line terminal and branch point.
20. a kind of production method of Multi sectional tunable laser, methods described includes：
Semiconductor laser bodies are provided, the semiconductor laser main body includes multiple semiconductor layers, a front end face and one
Rear end face, wherein semiconductor layer formation semiconductor active region；
A continuous substrate grating is formed in the semiconductor layer parallel with active region at least one；And
Multiple sampling grating sections are formed at least one of substrate grating of semiconductor layer, wherein sampling grating section has
There is the different respective sampling periods to form multiple list type laser sections, be configured as producing the laser of different wave length.
21. the production method of Multi sectional tunable laser as claimed in claim 20, it is characterised in that form described continuous
Substrate grating include one first holographic lithography step, and wherein form the multiple sampling grating section including one second complete
Cease lithography step.
22. the production method of Multi sectional tunable laser as claimed in claim 20, it is characterised in that form described continuous
Substrate grating include radiation one first exposure, with change with screen periods a substrate grating pattern in one first sense
Luminescent material and the substrate grating pattern is shifted to semiconductor layer at least one to form the substrate grating with screen periods,
And one second exposure that the multiple sampling grating section includes radiating wherein is formed, have the one of the sampling period to adopt to change
A photosensitive material in sample grating pattern and by the sampling grating pattern transferring semiconductor layers at least one to form sampling
Grating.
23. the production method of Multi sectional tunable laser as claimed in claim 20, it is characterised in that form described continuous
Substrate grating include one first holographic exposure, and wherein form the multiple sampling grating section and holographic exposed including one second
Light.
24. the production method of Multi sectional tunable laser as claimed in claim 23, it is characterised in that use phase mask
Perform first holographic exposure and second holographic exposure.
25. the production method of Multi sectional tunable laser as claimed in claim 20, it is characterised in that formed the multiple
Sampling grating section, which is included in sampling grating section at least one, forms a phase shift.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/551,353 | 2014-11-24 | ||
| US14/551,353 US10020636B2 (en) | 2013-06-13 | 2014-11-24 | Tunable laser with multiple in-line sections including sampled gratings |
| PCT/US2015/062377 WO2016085956A1 (en) | 2014-11-24 | 2015-11-24 | Tunable laser with multiple in-line sections including sampled gratings |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107210584A true CN107210584A (en) | 2017-09-26 |
Family
ID=56074962
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580072166.7A Pending CN107210584A (en) | 2014-11-24 | 2015-11-24 | Tunable laser with multiple list type sections including sampling grating |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP3224919A4 (en) |
| CN (1) | CN107210584A (en) |
| WO (1) | WO2016085956A1 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106099639A (en) * | 2016-08-26 | 2016-11-09 | 武汉光迅科技股份有限公司 | A kind of multi-wavelength array laser and manufacture method thereof and using method |
| CN110299589A (en) * | 2019-06-04 | 2019-10-01 | 中国人民解放军陆军工程大学 | Frequency division and frequency multiplication generation method and device |
| CN111786257A (en) * | 2020-06-12 | 2020-10-16 | 芯思杰技术(深圳)股份有限公司 | Photodiode wavelength control method and photodiode |
| CN111786258A (en) * | 2020-06-12 | 2020-10-16 | 芯思杰技术(深圳)股份有限公司 | Photodiode chip and manufacturing method thereof |
| CN111799649A (en) * | 2020-06-12 | 2020-10-20 | 芯思杰技术(深圳)股份有限公司 | Method and device for controlling wavelength of photodiode |
| WO2021249541A1 (en) * | 2020-06-12 | 2021-12-16 | 芯思杰技术(深圳)股份有限公司 | Photodiode and chip thereof, chip manufacturing method, and wavelength control method and apparatus |
| CN115425517A (en) * | 2022-08-18 | 2022-12-02 | 武汉敏芯半导体股份有限公司 | Laser manufacturing method for improving wavelength distribution uniformity |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5413884A (en) * | 1992-12-14 | 1995-05-09 | American Telephone And Telegraph Company | Grating fabrication using electron beam lithography |
| US20030169785A1 (en) * | 2002-03-11 | 2003-09-11 | Jong-Ryeol Kim | Wavelength-tunable laser apparatus |
| US20050031009A1 (en) * | 2003-08-07 | 2005-02-10 | San-Liang Lee | Structure and manufacturing method for single-wavelength and multi-wavelength distributed feedback lasers |
| EP2113973A1 (en) * | 2008-04-29 | 2009-11-04 | Alcatel Lucent | Laser source and method for generating millimeter wave |
| CN102891433A (en) * | 2012-09-27 | 2013-01-23 | 中国科学院半导体研究所 | Method for manufacturing tunable laser and optical amplifier monolithic integrated device |
| US20130084070A1 (en) * | 2011-09-29 | 2013-04-04 | Applied Optoelectronics, Inc. | Optical transceiver including optical fiber coupling assembly to increase usable channel wavelengths |
| CN103811994A (en) * | 2012-11-07 | 2014-05-21 | 无锡华御信息技术有限公司 | Working point variable semiconductor laser |
| CN103956652A (en) * | 2014-04-25 | 2014-07-30 | 南京威宁锐克信息技术有限公司 | Low-cost tunable DFB semiconductor laser device of integrated modulator and manufacturing method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5536085A (en) * | 1995-03-30 | 1996-07-16 | Northern Telecom Limited | Multi-wavelength gain-coupled distributed feedback laser array with fine tunability |
| US8457165B2 (en) * | 2010-05-26 | 2013-06-04 | Google Inc. | Tunable multi-wavelength semiconductor laser array for optical communications based on wavelength division multiplexing |
| US10020636B2 (en) * | 2013-06-13 | 2018-07-10 | Applied Optoelectronics, Inc. | Tunable laser with multiple in-line sections including sampled gratings |
-
2015
- 2015-11-24 WO PCT/US2015/062377 patent/WO2016085956A1/en active Application Filing
- 2015-11-24 CN CN201580072166.7A patent/CN107210584A/en active Pending
- 2015-11-24 EP EP15863314.9A patent/EP3224919A4/en not_active Withdrawn
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5413884A (en) * | 1992-12-14 | 1995-05-09 | American Telephone And Telegraph Company | Grating fabrication using electron beam lithography |
| US20030169785A1 (en) * | 2002-03-11 | 2003-09-11 | Jong-Ryeol Kim | Wavelength-tunable laser apparatus |
| US20050031009A1 (en) * | 2003-08-07 | 2005-02-10 | San-Liang Lee | Structure and manufacturing method for single-wavelength and multi-wavelength distributed feedback lasers |
| EP2113973A1 (en) * | 2008-04-29 | 2009-11-04 | Alcatel Lucent | Laser source and method for generating millimeter wave |
| US20130084070A1 (en) * | 2011-09-29 | 2013-04-04 | Applied Optoelectronics, Inc. | Optical transceiver including optical fiber coupling assembly to increase usable channel wavelengths |
| CN102891433A (en) * | 2012-09-27 | 2013-01-23 | 中国科学院半导体研究所 | Method for manufacturing tunable laser and optical amplifier monolithic integrated device |
| CN103811994A (en) * | 2012-11-07 | 2014-05-21 | 无锡华御信息技术有限公司 | Working point variable semiconductor laser |
| CN103956652A (en) * | 2014-04-25 | 2014-07-30 | 南京威宁锐克信息技术有限公司 | Low-cost tunable DFB semiconductor laser device of integrated modulator and manufacturing method |
Non-Patent Citations (1)
| Title |
|---|
| LIANYAN LI ET AL: "Experimental demonstration of a low-cost tunable semiconductor DFB laser for access networks", 《SEMICONDUCTOR SCIENCE AND TECHNOLOGY》 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106099639A (en) * | 2016-08-26 | 2016-11-09 | 武汉光迅科技股份有限公司 | A kind of multi-wavelength array laser and manufacture method thereof and using method |
| CN110299589A (en) * | 2019-06-04 | 2019-10-01 | 中国人民解放军陆军工程大学 | Frequency division and frequency multiplication generation method and device |
| CN110299589B (en) * | 2019-06-04 | 2021-11-09 | 中国人民解放军陆军工程大学 | Frequency division and frequency multiplication generation method and device |
| CN111786257A (en) * | 2020-06-12 | 2020-10-16 | 芯思杰技术(深圳)股份有限公司 | Photodiode wavelength control method and photodiode |
| CN111786258A (en) * | 2020-06-12 | 2020-10-16 | 芯思杰技术(深圳)股份有限公司 | Photodiode chip and manufacturing method thereof |
| CN111799649A (en) * | 2020-06-12 | 2020-10-20 | 芯思杰技术(深圳)股份有限公司 | Method and device for controlling wavelength of photodiode |
| WO2021249541A1 (en) * | 2020-06-12 | 2021-12-16 | 芯思杰技术(深圳)股份有限公司 | Photodiode and chip thereof, chip manufacturing method, and wavelength control method and apparatus |
| CN115425517A (en) * | 2022-08-18 | 2022-12-02 | 武汉敏芯半导体股份有限公司 | Laser manufacturing method for improving wavelength distribution uniformity |
Also Published As
| Publication number | Publication date |
|---|---|
| EP3224919A1 (en) | 2017-10-04 |
| WO2016085956A1 (en) | 2016-06-02 |
| EP3224919A4 (en) | 2018-08-08 |
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