CN107147282B - A kind of efficiently double capacitance charge pumps - Google Patents
A kind of efficiently double capacitance charge pumps Download PDFInfo
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- CN107147282B CN107147282B CN201710396090.4A CN201710396090A CN107147282B CN 107147282 B CN107147282 B CN 107147282B CN 201710396090 A CN201710396090 A CN 201710396090A CN 107147282 B CN107147282 B CN 107147282B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
The invention discloses a kind of efficiently double capacitance charge pumps, it is characterised in that: including low-dropout linear voltage-regulating circuit, analog switch and its control signal, current mirror and capacitor；The control signal of the analog switch includes S1, S2, S3, S4, S5, S6, S7 and S8；The analog switch includes the MP1 of S2 control, the MP2 of S6 control, the MP6 of S1 control, the MP5 of S5 control, the MP3 of S3 control, the MP4 of S7 control, the MN1 of S4 control, the MN2 of S8 control；The capacitor includes C1 and C2.A kind of efficiently double capacitance charge pumps of the present invention have the advantages that output current capacity is strong；Charge pump improves the ability of output electric current and reduces output voltage ripple in such a way that double capacitors work alternatively；It is very significantly improved using the power amplifier properties of the charge pump in the present invention.
Description
Technical field
The present invention relates to a kind of Switching Power Supply, especially a kind of efficiently double capacitance charge pumps.
Background technique
Charge pump circuit is a kind of electricity generated by electric charge accumulation effect on capacitor higher than supply voltage or negative voltage
Road.The course of work of charge pump is storage energy first, is then released energy in a controlled manner, electric with the output needed for obtaining
Pressure.Charge pump, come storage energy, and realizes voltage increase by switch arrays and oscillator etc. using capacitor.Charge pump is very
Suitable for slimline portable electric die pressing product, such as mobile phone, laptop, Medical Instruments.The charge pump knot of most common of them
Structure is multiplication of voltage charge pump, is charged using single pump capacitor.
Traditional multiplication of voltage charge pump voltage is by oscillator, multiple analog switches (or analog switch array), control circuit, outer
Boundary pumps capacitor CF and output capacitance CR composition.As shown in Figure 1, in the charging stage, switch S1/S3 conducting, S2/S4 shutdown.Capacitor
CF is electrically charged, and the voltage at the both ends CF is charged to input voltage VIN, and storage energy, and the energy of storage will be in next electric discharge
Stage is transferred.Storage capacitor CR has just been charged to 2VIN electricity by the energy to come from CF transfer in a upper discharge cycle
Pressure, and electric current is provided for load.In discharge regime, switch S1/S3 shutdown, S2/S4 conducting.The level at the both ends capacitor CF is shifted up
VIN, and CF had charged to VIN in a upper charging stage, therefore, the total voltage at the both ends CR becomes 2VIN now.Then, electric
Hold the energy transfer that CF electric discharge stores the charging stage and provides electric current to CR, and for load.
The frequency of charging-discharging cycle depends on clock frequency；Higher clock frequency is generallyd use reducing to capacitor CF and
The requirement of CR capacitance.There are three the most important performance indicators of charge pump: power consumption efficiency, output voltage ripple amplitude and area.It can
It is lower with the multiplication of voltage charge pump power for finding out traditional, and the ripple amplitude of output voltage is larger.
Summary of the invention
Goal of the invention of the invention is: in view of the above problems, providing a kind of double capacitance charge pumps, is powering on just
Phase is effectively prevented the overshoot of output voltage by the way of soft start, while in such a way that double capacitors work alternatively, improving
The ability of output electric current simultaneously reduces output voltage ripple.
The technical solution adopted by the invention is as follows:
A kind of efficiently double capacitance charge pumps of the present invention, including low-dropout linear voltage-regulating circuit, analog switch and its control letter
Number, current mirror and capacitor；The control signal of the analog switch includes S1, S2, S3, S4, S5, S6, S7 and S8；The simulation is opened
The MP1 including S2 control, the MP2 of S6 control, the MP6 of S1 control, the MP5 of S5 control are closed, the MP3 that S3 is controlled, S7 control
The MN2 of the MN1 of MP4, S4 control, S8 control；The capacitor includes C1 and C2；
The current mirror is in series with C1 and C2 respectively, and the drain electrode of the C1 other end and MP3, MN1 drain compared to node CN1,
The drain electrode of the C2 other end and MP4, MN2 drain compared to node CN2；The series circuit and MP4 and MN2 of the MP3 and MN1
Series circuit, be in parallel connection；Described MP1, MP2, MP6, MP5 are in parallel, and parallel circuit one end connects power power-supply
The other end and MP2 of PVDD, MP1 and MP6 and the other end of MP5 are separately connected C1 and C2；The current mirror respectively with MP1
Node CP1 and node CP2 are intersected at MP2.
Further, the current mirror includes current mirror 1 and current mirror 2；The current mirror 1 includes electric current I1, and and its
The metal-oxide-semiconductor A and metal-oxide-semiconductor B of connection；The source electrode and grid of the metal-oxide-semiconductor A and metal-oxide-semiconductor B is separately connected, the electric current I1 connection MOS
The grid of pipe A and metal-oxide-semiconductor B；The current mirror 2 includes and electric current I2 and metal-oxide-semiconductor C connected to it and metal-oxide-semiconductor D；It is described
The source electrode and grid of metal-oxide-semiconductor C and metal-oxide-semiconductor D are separately connected, the grid of electric current I2 the connection metal-oxide-semiconductor C and metal-oxide-semiconductor D；The electricity
It is equal with electric current I2 to flow I1.
Further, the low-dropout linear voltage-regulating circuit includes OP amplifier, resistance R1, resistance R2 and metal-oxide-semiconductor K；It is described
The inverting input terminal of OP amplifier accesses reference voltage Vref；The parallel connection of the normal phase input end access R1 and R2 of the OP amplifier
Circuit；The grid of the output end connection metal-oxide-semiconductor K of the OP amplifier；The source electrode of metal-oxide-semiconductor K is separately connected supply voltage VDD, MOS
The source electrode of the drain electrode connection MP3 and MP4 of pipe K；The R1 connection power power-supply PVDD, R2 ground connection.
In conclusion by adopting the above-described technical solution, the beneficial effects of the present invention are: using single capacitor with traditional
Charge pump compare, the present invention in double capacitance charges pump have the advantages that output current capacity it is strong；At the initial stage that powers on using soft
The mode of starting is effectively prevented the overshoot of output voltage；Charge pump improves output in such a way that double capacitors work alternatively
The ability of electric current simultaneously reduces output voltage ripple；It is obtained using the power amplifier properties of the charge pump in the present invention very big
Improve.
Detailed description of the invention
Examples of the present invention will be described by way of reference to the accompanying drawings, in which:
Fig. 1 is traditional multiplication of voltage charge pump circuit figure.
Fig. 2 is a kind of circuit diagram of efficiently double capacitance charge pumps of the present invention.
Fig. 3 is low-dropout linear voltage-regulating circuit figure.
Fig. 4 is the timing waveform of all switches in a kind of efficiently double capacitance charge pumps of the present invention.
Specific embodiment
All features disclosed in this specification or disclosed all methods or in the process the step of, in addition to mutually exclusive
Feature and/or step other than, can combine in any way.
Any feature disclosed in this specification (including any accessory claim, abstract), unless specifically stated,
It is replaced by other equivalent or with similar purpose alternative features.That is, unless specifically stated, each feature is a series of
An example in equivalent or similar characteristics.
Such as Fig. 2, a kind of efficiently double capacitance charges pumps of the present invention, including low-dropout linear voltage-regulating circuit, analog switch and its
Control signal, current mirror and capacitor；The control signal of the analog switch includes S1, S2, S3, S4, S5, S6, S7 and S8；It is described
Analog switch includes the MP1 of S2 control, the MP2 of S6 control, the MP6 of S1 control, the MP5 of S5 control, the MP3 of S3 control, S7 control
The MN2 of the MN1 of the MP4 of system, S4 control, S8 control；The capacitor includes C1 and C2；
The current mirror is in series with C1 and C2 respectively, and the drain electrode of the C1 other end and MP3, MN1 drain compared to node CN1,
The drain electrode of the C2 other end and MP4, MN2 drain compared to node CN2；The series circuit and MP4 and MN2 of the MP3 and MN1
Series circuit, be in parallel connection；Described MP1, MP2, MP6, MP5 are in parallel, and parallel circuit one end connects power power-supply
The other end and MP2 of PVDD, MP1 and MP6 and the other end of MP5 are separately connected C1 and C2；The current mirror respectively with MP1
Node CP1 and node CP2 are intersected at MP2.
The current mirror includes current mirror 1 and current mirror 2；The current mirror 1 includes electric current I1 and connected to it
Metal-oxide-semiconductor A and metal-oxide-semiconductor B；The source electrode and grid of the metal-oxide-semiconductor A and metal-oxide-semiconductor B is separately connected, the electric current I1 connection metal-oxide-semiconductor A and
The grid of metal-oxide-semiconductor B；The current mirror 2 includes and electric current I2 and metal-oxide-semiconductor C connected to it and metal-oxide-semiconductor D；The metal-oxide-semiconductor C
It is separately connected with the source electrode and grid of metal-oxide-semiconductor D, the grid of electric current I2 the connection metal-oxide-semiconductor C and metal-oxide-semiconductor D；The electric current I1 with
Electric current I2 is equal in magnitude.
Such as Fig. 3, the low-dropout linear voltage-regulating circuit includes OP amplifier, resistance R1, resistance R2 and metal-oxide-semiconductor K；The OP
The inverting input terminal of amplifier accesses reference voltage Vref；The parallel connection electricity of the normal phase input end access R1 and R2 of the OP amplifier
Road；The grid of the output end connection metal-oxide-semiconductor K of the OP amplifier；The source electrode of metal-oxide-semiconductor K is separately connected supply voltage VDD, metal-oxide-semiconductor
The source electrode of the drain electrode connection MP3 and MP4 of K；The R1 connection power power-supply PVDD, R2 ground connection.
A kind of working principle of efficiently double capacitance charge pumps of the present invention: charge pump normal work is divided into two stages:
First stage is the soft start-up process of charge pump, and S1, S5, S3, S4, S7 and S8 are high level at this time, S2 and
S6 is low level, and only switching tube MN1, MN2 and MP1, MP2 are connected, and capacitor C1 and C2 is charged by the current mirror that I1 is formed,
It is PVDD voltage overshoot in chip power up in order to prevent to capacitor charging by the way of constant current.As capacitor C1 and
C2 charging reaches burning voltage VCWhen, charge pump completes the soft start in the first rank stage；
Second stage is the process that double capacitor C1 and C2 alternations are PVDD (power power-supply) power supply, due to capacitor C1
It is full symmetric with C1 or so circuit, including biasing, so only analyzing left side circuit, the switch state of the right circuit and the left side
Circuit is opposite.By being analyzed above it is found that when S1, S4 and S2, S3 are high level, the voltage on capacitor C1 is VC, when being in down
When one state, S1, S4 and S2, S3 become low level, and node CN1 voltage becomes V from 0VCN1, since capacitor both end voltage cannot dash forward
Become, so node CN1 voltage is by VCBecome VC+VCN1, switching tube MP1 is connected at this time, VPVDDVoltage can be made of amplifier OP
Negative feedback loop obtain:
Similarly, when the right circuit works, switching tube MP2 conducting, VPVDDVoltage it is available:
Such as Fig. 4, within a clock cycle, circuit alternately works on the right of the left side, makes VPVDDVoltage is in entire clock
The constant Feedback Design value that is negative in period.
The invention is not limited to specific embodiments above-mentioned.The present invention, which expands to, any in the present specification to be disclosed
New feature or any new combination, and disclose any new method or process the step of or any new combination.
Claims (1)
1. a kind of efficiently double capacitance charge pumps, it is characterised in that: including low-dropout linear voltage-regulating circuit, analog switch and its control
Signal, current mirror and capacitor；The control signal of the analog switch includes S1, S2, S3, S4, S5, S6, S7 and S8；The simulation
MP2, the MP6 of S1 control, the MP5 of S5 control of the switch MP1 including S2 control, S6 control, the MP3 that S3 is controlled, S7 control
The MN2 of the MN1 of MP4, S4 control, S8 control；The capacitor includes C1 and C2；
The current mirror is in series with C1 and C2 respectively, and drain electrode, the MN1 drain electrode of the C1 other end and MP3 intersect at node CN1, and C2 is another
Drain electrode, the MN2 drain electrode of one end and MP4 intersect at node CN2；The series circuit and MP4 of the MP3 and MN1 and the string of MN2
Join circuit, is in parallel connection；Described MP1, MP2, MP6, MP5 are in parallel, and parallel circuit one end connects power power-supply PVDD,
The other end and MP2 of MP1 and MP6 and the other end of MP5 are separately connected C1 and C2；The current mirror respectively with MP1 and MP2
Intersect at node CP1 and node CP2；
The current mirror includes current mirror 1 and current mirror 2；The current mirror 1 includes electric current I1 and metal-oxide-semiconductor A connected to it
With metal-oxide-semiconductor B；The source electrode and grid of the metal-oxide-semiconductor A and metal-oxide-semiconductor B is separately connected, the electric current I1 connection metal-oxide-semiconductor A and metal-oxide-semiconductor B
Grid；The current mirror 2 includes and electric current I2 and metal-oxide-semiconductor C connected to it and metal-oxide-semiconductor D；The metal-oxide-semiconductor C and metal-oxide-semiconductor
The source electrode and grid of D is separately connected, the grid of electric current I2 the connection metal-oxide-semiconductor C and metal-oxide-semiconductor D；The electric current I1 and electric current I2 phase
Deng；
The low-dropout linear voltage-regulating circuit includes OP amplifier, resistance R1, resistance R2 and metal-oxide-semiconductor K；The OP amplifier
Inverting input terminal accesses reference voltage；The parallel circuit of the normal phase input end access R1 and R2 of the OP amplifier；The OP is put
The grid of the output end connection metal-oxide-semiconductor K of big device；The source electrode of metal-oxide-semiconductor K connects supply voltage VDD, and the drain electrode of metal-oxide-semiconductor K is separately connected
The source electrode of MP3 and MP4；The R1 connection power power-supply PVDD, R2 ground connection.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710396090.4A CN107147282B (en) | 2017-05-27 | 2017-05-27 | A kind of efficiently double capacitance charge pumps |
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| CN201710396090.4A CN107147282B (en) | 2017-05-27 | 2017-05-27 | A kind of efficiently double capacitance charge pumps |
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| CN107147282A CN107147282A (en) | 2017-09-08 |
| CN107147282B true CN107147282B (en) | 2019-07-19 |
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| CN110445364B (en) * | 2019-09-11 | 2020-08-11 | 上海南芯半导体科技有限公司 | For a 1: soft start and drive circuit of 2-direction charge pump and realization method thereof |
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| CN1421997A (en) * | 2001-11-29 | 2003-06-04 | 恩益禧电子股份有限公司 | Semiconductor boosted circuit of transistor without breakdown voltage being two times of power supply voltage |
| CN101783589A (en) * | 2009-01-20 | 2010-07-21 | 恩益禧电子股份有限公司 | Dc/dc converter circuit |
| CN201947172U (en) * | 2011-01-07 | 2011-08-24 | 长盛科技股份有限公司 | Switching voltage regulator circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5262934A (en) * | 1992-06-23 | 1993-11-16 | Analogic Corporation | Bipolar voltage doubler circuit |
| DE19939091B4 (en) * | 1999-08-18 | 2004-09-30 | Infineon Technologies Ag | charge pump |
| US6417725B1 (en) * | 2000-08-28 | 2002-07-09 | Marvell International, Ltd. | High speed reference buffer |
| CN101335486A (en) * | 2007-06-28 | 2008-12-31 | 天利半导体（深圳）有限公司 | Low-cost high-efficiency time-sharing multiplexing charge pump circuit |
| CN101552552B (en) * | 2008-04-02 | 2012-01-04 | 联咏科技股份有限公司 | Dynamic Feedback Regulated Charge Pump Device |
| CN105406711B (en) * | 2015-11-27 | 2018-06-29 | 上海晶丰明源半导体股份有限公司 | Two-way voltage conversion and control chip, two-way electric pressure converter and electronic electric energy meter |
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2017
- 2017-05-27 CN CN201710396090.4A patent/CN107147282B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1421997A (en) * | 2001-11-29 | 2003-06-04 | 恩益禧电子股份有限公司 | Semiconductor boosted circuit of transistor without breakdown voltage being two times of power supply voltage |
| CN101783589A (en) * | 2009-01-20 | 2010-07-21 | 恩益禧电子股份有限公司 | Dc/dc converter circuit |
| CN201947172U (en) * | 2011-01-07 | 2011-08-24 | 长盛科技股份有限公司 | Switching voltage regulator circuit |
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| CN107147282A (en) | 2017-09-08 |
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