CN106980202B - Production method and light shield with integral type black matrix" Yu the liquid crystal display panel of photoresist spacer - Google Patents
Production method and light shield with integral type black matrix" Yu the liquid crystal display panel of photoresist spacer Download PDFInfo
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- CN106980202B CN106980202B CN201710370734.2A CN201710370734A CN106980202B CN 106980202 B CN106980202 B CN 106980202B CN 201710370734 A CN201710370734 A CN 201710370734A CN 106980202 B CN106980202 B CN 106980202B
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 155
- 125000006850 spacer group Chemical group 0.000 title claims abstract description 119
- 239000011159 matrix material Substances 0.000 title claims abstract description 68
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 29
- 230000035699 permeability Effects 0.000 claims abstract description 28
- 238000012545 processing Methods 0.000 claims abstract description 8
- 238000002834 transmittance Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 12
- 230000003628 erosive effect Effects 0.000 claims description 6
- 230000009477 glass transition Effects 0.000 claims description 5
- 238000004132 cross linking Methods 0.000 abstract description 21
- 238000006243 chemical reaction Methods 0.000 abstract description 19
- 230000008569 process Effects 0.000 abstract description 15
- 239000010408 film Substances 0.000 description 56
- 230000005540 biological transmission Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- NMFHJNAPXOMSRX-PUPDPRJKSA-N [(1r)-3-(3,4-dimethoxyphenyl)-1-[3-(2-morpholin-4-ylethoxy)phenyl]propyl] (2s)-1-[(2s)-2-(3,4,5-trimethoxyphenyl)butanoyl]piperidine-2-carboxylate Chemical compound C([C@@H](OC(=O)[C@@H]1CCCCN1C(=O)[C@@H](CC)C=1C=C(OC)C(OC)=C(OC)C=1)C=1C=C(OCCN2CCOCC2)C=CC=1)CC1=CC=C(OC)C(OC)=C1 NMFHJNAPXOMSRX-PUPDPRJKSA-N 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 238000009738 saturating Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
- G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
Abstract
The present invention provides a kind of production method and light shield with integral type black matrix" Yu the liquid crystal display panel of photoresist spacer.It is different and the characteristic and viscosity flow characteristic of different degrees of cross-linking reaction occurs that this method using negativity photoresist layer is illuminated by the light energy, using including the first complete transparent area (11), second complete transparent area (13), first complete shading area (15), partial light permeability area (17), and second the light shield (1) in complete shading area (19) negativity photoresist layer (5) is exposed, it is developed again, baking processing procedure produces integral type black matrix" and photoresist spacer in liquid crystal display panel, wherein the film thickness of secondary photoresist spacer (53) is less than key light resistance spacer (51) film thickness and is greater than barricade (57) film thickness of black matrix", light shield quantity can be reduced, save one of yellow light process, reduce production cost, reduce the production time, and make key light resistance spacer (51) and secondary photoresist spacer (53) Offset is stablized, and the yield of liquid crystal display panel product is improved.
Description
Technical field
The present invention relates to liquid crystal display process technique fields, more particularly to one kind to have integral type black matrix" and photoresist
The production method and light shield of the liquid crystal display panel of spacer.
Background technique
The flat display apparatus such as liquid crystal display (Liquid Crystal Display, LCD) are because having high image quality, saving
The advantages that electricity, fuselage are thin and have a wide range of application becomes the mainstream in display device and is widely used in mobile phone, TV, puts down
The various consumer electrical products such as plate computer, digital camera, laptop, desktop computer.
Liquid crystal display on existing market generally includes shell, the liquid crystal display panel being set in the housing and is set in the housing
Backlight module (Backlight Module).The structure of liquid crystal display panel is by a colored filter (Color Filter, CF) base
Plate, a thin-film transistor array base-plate (Thin Film Transistor Array Substrate, TFT Array
Substrate) and the liquid crystal layer (Liquid Crystal Layer) that is configured between two substrates is constituted, working principle
It is to control the rotation of the liquid crystal molecule of liquid crystal layer by applying driving voltage on two plate bases, the light of backlight module is rolled over
Shoot out generation picture.
By taking common vertical orientation (Vertical Alignment, VA) type liquid crystal display panel as an example, traditional CF substrate packet
Include black matrix" (Black Matrix, BM), colored color blocking layer, public electrode and photoresist spacer (Photo Spacer, PS)
Deng, wherein colored color blocking layer is the light-transmissive film with Red Green Blue；Black matrix" is blocked for dividing adjacent color blocking
Gap between different color prevents light leakage or colour mixture；Photoresist spacer be for supporting two substrates, maintain liquid crystal layer box thick and
The column spacer for guaranteeing liquid crystal layer box thickness uniformity is divided into key light resistance spacer (Main PS) and secondary photoresist spacer (Sub
PS).Traditional CF substrate manufacture technique produces black matrix" through one of yellow light process using a light shield, reuses another light shield
Photoresist spacer is produced through another road yellow light process.
With the development of display technology, there is the technology (Black for being combined into one black matrix" and photoresist spacer
Photo Spacer, BPS), a light shield and one of yellow light process can be reduced, to reduce material cost and reduce the production time
(Tact Time).Currently, BPS technology generally use negativity photoresist (characteristic be the region that is irradiated by light will not developed liquid go
Remove, then can developed liquid removal without the region that is irradiated by light) for material, use the halftone mask with different penetrances
(Half Tone Mask) is exposed, then after developed, baking, obtains the black matrix" and photoresist spacer of integral type.
Specifically, Fig. 1, Fig. 2 and Fig. 3 are please referred to, it is existing for formula black matrix" and the photoresist spacer of being made into one
Halftone mask include light transmittance Tr be 100% complete transparent area A, light transmittance Tr be X1% first part's transparent area
B, the complete shading area D that the second part transparent area C and light transmittance Tr that light transmittance Tr is X2% are 0, wherein 0 < X2 < X1
<100.Developed again after being exposed using the halftone mask to negativity photoresist layer 200, baking processing procedure, the complete light transmission
Area's A respective production goes out key light resistance spacer 210, and first part's transparent area B respective production goes out secondary photoresist spacer 230, and second
Dividing transparent area C respective production to go out is in the barricade 250 of grid-shaped in black matrix", and complete shading area D respective production goes out black matrix"
In by the barricade 250 of grid-shaped defined for passing through blank area 270 to be shown for light.
During being exposed using the halftone mask to negativity photoresist, key light resistance spacer 210 is received
100% ultraviolet (UV) ray energy can substantially be born in developing process so as to which enough cross-linking reactions occur
The etching of developer solution and keep film thickness constant；And secondary photoresist spacer 230 in black matrix" in the barricade 250 of grid-shaped only by
To the irradiation of part UV light energy, thorough cross-linking reaction is failed to, part film thick quilt developer solution is had in developing process
It corrodes, has different degrees of loss, and the film thickness extent of damage of secondary photoresist spacer 230 is less than in black matrix" in grid-shaped
The film thickness extent of damage of barricade 250 has been eventually led in key light resistance spacer 210, secondary photoresist spacer 230 and black matrix"
It is variant in the film thickness between this three of the barricade 250 of grid-shaped, wherein mutual offset can be by being arranged halftone mask
The light transmittances of different zones is adjusted.
But when actually using BPS technology, the barricade of secondary photoresist spacer and black matrix" be since exposure energy is insufficient and
The erosion different degrees of by developer solution is formed, the control of the penetrance precision, exposure energy of halftone mask different zones
The precision of solution level, the precision of developing time, the precision of development temperature, the precision of developer pressure in precision, developing process,
Even from film thickness shadow of the interval time (Queue time) to the barricade of secondary photoresist spacer and black matrix" for being exposed to development
It rings all especially greatly, be easy to cause the uniformity (Uniformity) of respective film thickness poor.Through practical sampling site (12 different positions
Point) it measures, in the integral type black matrix" and photoresist spacer made using above-mentioned existing halftone mask, key light resistance interval
The uniform film thickness sex differernce of object is 3.8%, and the uniform film thickness sex differernce of the barricade of secondary photoresist spacer and black matrix" is distinguished
When the uniformity of 10.6% and 11.4%, secondary photoresist spacer differs greatly, influence whether the uniformity of liquid crystal layer box thickness with
And the display effect of final liquid crystal display panel product.
Summary of the invention
The system with integral type black matrix" Yu the liquid crystal display panel of photoresist spacer that the purpose of the present invention is to provide a kind of
Make method, light shield quantity can be reduced, save one of yellow light process, reduce production cost, reduces the production time, and make liquid crystal
Integral type black matrix" and the film thickness uniformity of photoresist spacer secondary in photoresist spacer in panel is preferable, and key light hinders spacer
Stablize with the offset of secondary photoresist spacer, improves the yield of liquid crystal display panel product.
Another object of the present invention is to provide a kind of light shield, using the light shield can produce integral type black matrix" with
Photoresist spacer reduces production cost, reduces the production time, and makes in integral type black matrix" and photoresist spacer obtained
The film thickness uniformity of secondary photoresist spacer is preferable, and key light hinders spacer and the offset of secondary photoresist spacer is stablized, and improves liquid crystal surface
The yield of panel products.
To achieve the above object, present invention firstly provides a kind of liquid crystal with integral type black matrix" Yu photoresist spacer
The production method of panel, comprising the following steps:
Step S1, substrate is provided, is coated with negativity photoresist layer on the substrate；
Step S2, light shield is provided；
The light shield includes the first complete transparent area and the described first complete light transmission of complete transparent area spaced second
Area, surrounds the first complete transparent area and first at the first complete shading area for being looped around the described second complete transparent area periphery
The partial light permeability area in complete shading area and the second complete shading area being connected with the edge in the partial light permeability area；
Step S3, negativity photoresist layer is exposed using the light shield；
Step S4, develop to the negativity photoresist layer after exposure；
It keeps film thickness constant after the negativity photoresist layer exposed by the described first complete transparent area is developed, forms key light resistance
Spacer；Keep film thickness constant after the negativity photoresist layer exposed by the described second complete transparent area is developed, formation and key light
Hinder the equal photoresist cylinder of spacer film thickness；It is complete after the negativity photoresist layer exposed by first complete shading area is developed
It corrodes entirely and forms the empty slot around the photoresist cylinder；After the negativity photoresist layer exposed by the partial light permeability area is developed
By some erosion, the barricade that film thickness is less than the black matrix" of key light resistance spacer film thickness is formed；By second complete shading area
By the complete blank area for corroding and being formed and being defined by the barricade of the black matrix" after the negativity photoresist layer exposed is developed；
Step S5, baking processing procedure is carried out, control baking temperature is more than the glass transition temperature of negativity photoresist, so that the photoresist
Cylinder is changed into viscous state and fills into the empty slot, so that the film thickness of the photoresist cylinder reduces, it is small to form film thickness
The secondary photoresist spacer of spacer film thickness and the barricade film thickness greater than black matrix" is hindered in key light.
Spacing between the profile of second complete transparent area and the outer profile in the first complete shading area is not more than 7um.
Spacing between the profile of second complete transparent area and the outer profile in the first complete shading area is equal to 4um.
The light transmittance in the partial light permeability area is greater than 0 and less than 100%.
The step S3 is exposed using ultraviolet light.
The present invention also provides a kind of light shields, including the first complete transparent area and the described first complete transparent area interval to be arranged
The second complete transparent area, be looped around the described second complete transparent area periphery the first complete shading area, surround it is described first complete
Full transparent area and the partial light permeability area in the first complete shading area and it is connected with the edge in the partial light permeability area second complete
Full shading region；
The first complete transparent area is for making key light resistance spacer；The second complete transparent area and first hides completely
Light area matches, for making secondary photoresist spacer；The partial light permeability area is used to make the barricade in black matrix"；Described
Two complete shading areas are for making the blank area defined in black matrix" by barricade.
Spacing between the profile of second complete transparent area and the outer profile in the first complete shading area is not more than 7um.
Spacing between the profile of second complete transparent area and the outer profile in the first complete shading area is equal to 4um.
The light transmittance in the partial light permeability area is greater than 0 and less than 100%.
Beneficial effects of the present invention: the liquid crystal display panel provided by the invention with integral type black matrix" and photoresist spacer
Production method, it is different and the characteristic of different degrees of cross-linking reaction occurs and viscosity flow is special to be illuminated by the light energy using negativity photoresist layer
Property, using include the first complete transparent area, with the first complete transparent area of complete transparent area spaced second, be looped around second
First complete shading area of complete transparent area periphery, the partial light permeability for surrounding the first complete transparent area and the first complete shading area
The light shield in area and the second complete shading area being connected with the edge in partial light permeability area is exposed negativity photoresist layer,
Developed again, baking processing procedure produces integral type black matrix" and photoresist spacer in liquid crystal display panel, wherein secondary photoresist interval
The film thickness of object is less than key light resistance spacer film thickness and is greater than the barricade film thickness of black matrix", can reduce light shield quantity, save one
Road yellow light process reduces production cost, reduces the production time, and makes key light resistance spacer and the offset of secondary photoresist spacer steady
It is fixed, improve the yield of liquid crystal display panel product.Light shield provided by the invention can produce integral type black matrix" and photoresist interval
Object reduces production cost, reduces the production time, and makes secondary photoresist spacer in integral type black matrix" and photoresist spacer
Film thickness uniformity is preferable, and key light hinders spacer and the offset of secondary photoresist spacer is stablized, and improves the yield of liquid crystal display panel product.
Detailed description of the invention
For further understanding of the features and technical contents of the present invention, it please refers to below in connection with of the invention detailed
Illustrate and attached drawing, however, the drawings only provide reference and explanation, is not intended to limit the present invention.
In attached drawing,
Fig. 1 is that the vertical view of the existing halftone mask for be made into one formula black matrix" and photoresist spacer is illustrated
Figure；
Fig. 2 is corresponding to the schematic diagram of the section structure at K-K in Fig. 1；
Fig. 3 be made into one using existing halftone mask formula black matrix" and photoresist spacer process signal
Figure；
Fig. 4 is the production method process of the liquid crystal display panel with integral type black matrix" and photoresist spacer of the invention
Figure；
Fig. 5 by of the invention there is integral type black matrix" and the production method of the liquid crystal display panel of photoresist spacer to use
Light shield and light shield of the invention schematic top plan view；
Fig. 6 is corresponding to the schematic diagram of the section structure at P-P in Fig. 5；
Fig. 7 is the process of the production method of the liquid crystal display panel with integral type black matrix" and photoresist spacer of the invention
Schematic diagram；
Fig. 8 is that the offset of main photoresist spacer and secondary photoresist spacer is complete with the profile of the second complete transparent area and first
The tables of data of spacing variation between the outer profile of shading region；
Fig. 9 be when the spacing between the profile of the second complete transparent area and the outer profile in the first complete shading area is 4um,
The tables of data of the secondary photoresist spacer film thickness of different location point.
Specific embodiment
Further to illustrate technological means and its effect adopted by the present invention, below in conjunction with preferred implementation of the invention
Example and its attached drawing are described in detail.
Referring to Fig. 4, present invention firstly provides a kind of liquid crystal display panel with integral type black matrix" Yu photoresist spacer
Production method, comprising the following steps:
Step S1, in conjunction with Fig. 7, substrate 3 is provided, negativity photoresist layer 5 is coated on the substrate 3.
The negativity photoresist layer 5 has the property that
One, the region being irradiated by light will not the removal of developed liquid, without the region that is irradiated by light can developed liquid remove；
Two, different degrees of cross-linking reaction is occurred according to the difference for the light energy being subject to；
Three, VISCOUS FLOW occurs when temperature is more than glass transition temperature；VISCOUS FLOW is irreversible deformation.
Step S2, light shield 1 is provided.
Fig. 5, Fig. 6 and Fig. 7 are please referred to, the light shield 1 includes the first complete transparent area 11 and the described first complete light transmission
The complete transparent area 13 in area 11 spaced second, the first complete shading area for being looped around the described second complete 13 periphery of transparent area
15, it is saturating with the partial light permeability area 17 in the first complete shading area 15 and with the part to surround the first complete transparent area 11
The second complete shading area 19 that the edge in light area 17 is connected.
Specifically, the light transmittance Tr of the described first complete transparent area 11 is 100%, and the light of the second complete transparent area 13 is worn
Saturating rate Tr is 100%, and the light transmittance Tr in the first complete shading area 15 is 0, and the light transmittance Tr in the second complete shading area 19 is
0, the light transmittance Tr in the partial light permeability area 17 is X%, wherein 0 < X < 100, i.e., the light transmittance in the described partial light permeability area 17
Tr is greater than 0 and less than 100%.
Further, the described first complete transparent area 11 can be, but not limited to as circle shown in fig. 5, the second complete light transmission
Area 13 can be, but not limited to as ellipse shown in fig. 5, and the first complete shading area 15 is and the second complete 13 shape one of transparent area
The shade of cause.
Step S3, as shown in fig. 7, using ultraviolet light as light source, negativity photoresist layer 5 is exposed using the light shield 1.
Specifically, the negativity photoresist layer 5 that is exposed by the described first complete transparent area 11 and by the described second complete light transmission
The negativity photoresist layer 5 that area 13 is exposed receives 100% UV energy irradiation, anti-so as to which enough crosslinkings occur
It answers；The negativity photoresist layer 5 exposed by the partial light permeability area 17 the only irradiation by part UV energy, fails to thorough
The cross-linking reaction at bottom；The negativity photoresist layer 5 that is exposed by first complete shading area 15 and by second complete shading area
The 19 negativity photoresist layers 5 exposed are not affected by the irradiation of UV energy, and the crosslinking reaction may not occur.
Step S4, as shown in fig. 7, developing to the negativity photoresist layer 5 after exposure.
Specifically, the negativity photoresist layer 5 exposed by the described first complete transparent area 11 is due to having occurred enough crosslinkings
Reaction keeps film thickness constant after developed, forms key light and hinders spacer 51；It is exposed by the described second complete transparent area 13 negative
Property photoresist layer 5 keep film thickness constant due to having occurred enough cross-linking reactions, after developed, formed and hinder 51 film of spacer with key light
Thick equal photoresist cylinder 53 '；It is anti-due to not crosslinking by negativity photoresist layer 5 that first complete shading area 15 is exposed
It answers, is corroded and formed the empty slot 55 ' of the annular around the photoresist cylinder 53 ' after developed completely；By the partial light permeability
The negativity photoresist layer 5 that area 17 is exposed due to failing to thorough cross-linking reaction, it is developed after by some erosion, form film thickness
Less than the barricade 57 of the black matrix" of key light resistance 51 film thickness of spacer；The negativity light exposed by second complete shading area 19
Resistance layer 5 is formed by complete erosion after developed and is defined by the barricade 57 of the black matrix" since the crosslinking reaction may not occur
Blank area 59.
Step S5, as shown in fig. 7, carrying out baking processing procedure, control baking temperature is more than the glass transition temperature of negativity photoresist, is made
It obtains the photoresist cylinder 53 ' and is changed into viscous state and the filling into the empty slot 55 ', so that the photoresist cylinder 53 ' goes out
The film thickness of the phenomenon that now collapsing, photoresist cylinder 53 ' accordingly reduces, and forms film thickness and is less than key light resistance 51 film thickness of spacer and is greater than black
The secondary photoresist spacer 53 of 57 film thickness of barricade of colour moment battle array.
Further, if spacing between the profile of the second complete transparent area 13 and the outer profile in the first complete shading area 15
For Δ D, key light hinders offset, that is, key light resistance spacer 51 and secondary photoresist spacer between spacer 51 and secondary photoresist spacer 53
Film thickness difference between 53 is Δ H, experiments verify that, as shown in figure 8, when the value of Δ D is within the scope of 1~4um, Δ H with
The increase of Δ D and increase, occur the maximum value 0.368 of Δ H in Δ D=4um, key light resistance spacer 51 and secondary light can be met
Hinder the design requirement of offset between spacer 53；Certainly, Δ D unconfined can not increase, if Δ D >=7, will lead to described
Photoresist cylinder 53 ' is not enough to fill up the empty slot 55 ' and forms gully, when ultimately forming display panel product, will have herein
The danger of light leakage；Therefore, the separation delta D between the profile of the second complete transparent area 13 and the outer profile in the first complete shading area 15
No more than 7um, preferably 4um.
Referring to Fig. 9, the spacing between the profile of the second complete transparent area 13 and the outer profile in the first complete shading area 15
When Δ D is 4um, measured through practical sampling site (12 different location points), the film thickness of the secondary photoresist spacer 53 of different location point
More uniform, uniform film thickness sex differernce is only the 1.62% (calculation formula of uniform film thickness sex differernce are as follows: (Max-Min)/(Max+
Min) × 100%, wherein the maximum value of Max expression film thickness, Min indicate the minimum value of film thickness), compared with prior art, reducing
Light shield quantity saves one of yellow light process, reduces production cost, on the basis of reducing the production time, substantially increases secondary photoresist
The film thickness uniformity of spacer 53 can be improved liquid so that the offset of key light resistance spacer 51 and secondary photoresist spacer 53 is stablized
The yield of crystal face panel products.
Based on the same inventive concept, the present invention also provides a kind of light shields.Please refer to Fig. 5, Fig. 6 and Fig. 7, the light
Cover is for being exposed negativity photoresist layer 5, including the first complete transparent area 11, is spaced and sets with the described first complete transparent area 11
The complete transparent area 13 of second set, surrounds institute at the first complete shading area 15 for being looped around the described second complete 13 periphery of transparent area
State the partial light permeability area 17 of the first complete transparent area 11 and the first complete shading area 15 and the side with the partial light permeability area 17
The second complete shading area 19 that edge is connected.
The light transmittance Tr of the first complete transparent area 11 is 100%, the light transmittance Tr of the second complete transparent area 13
It is 100%, the light transmittance Tr in the first complete shading area 15 is 0, and the light transmittance Tr in the second complete shading area 19 is 0, described
The light transmittance Tr in partial light permeability area 17 is X%, wherein 0 < X < 100, i.e., the light transmittance Tr in the described partial light permeability area 17 is greater than 0
And less than 100%.
The first complete transparent area 11 can be, but not limited to as circle shown in fig. 5, and the second complete transparent area 13 can be with
But it is not limited to ellipse shown in fig. 5, the first complete shading area 15 is and the second consistent shading of complete 13 shape of transparent area
Ring；Separation delta D between the profile of second complete transparent area 13 and the outer profile in the first complete shading area 15 is not more than 7um, excellent
Select 4um.
The first complete transparent area 11 is for making key light resistance spacer 51；The second complete transparent area 13 and first
Complete shading area 15 matches, for making secondary photoresist spacer 53；The partial light permeability area 17 is for making in black matrix"
Barricade 57；Second complete shading area 19 is for making the blank area 59 defined in black matrix" by barricade 57；Institute
State key light resistance spacer 51, secondary photoresist spacer 53, the barricade 57 in black matrix" and by 57 boundaries of barricade in black matrix"
The blank area 59 made is integrally formed formula black matrix" and photoresist spacer.
Specifically, using ultraviolet light as light source, when being exposed using the light shield 1 to negativity photoresist layer 5: by described first
The complete negativity photoresist layer 5 exposed of transparent area 11 and the negativity photoresist layer 5 exposed by the described second complete transparent area 13 by
UV energy to 100% irradiates, so as to which enough cross-linking reactions occur；It is exposed by the partial light permeability area 17
The only irradiation by part UV energy of negativity photoresist layer 5, fail to thorough cross-linking reaction；Completely by described first
The negativity photoresist layer 5 and be not affected by by the negativity photoresist layer 5 that second complete shading area 19 is exposed that shading region 15 is exposed
The irradiation of UV energy, the crosslinking reaction may not occur.
Next develop to the negativity photoresist layer 5 after exposure: being exposed by the described first complete transparent area 11 negative
Property photoresist layer 5 keep film thickness constant due to having occurred enough cross-linking reactions, after developed, form key light and hinder spacer 51；Quilt
The negativity photoresist layer 5 that the second complete transparent area 13 is exposed is kept after developed since enough cross-linking reactions have occurred
Film thickness is constant, forms the photoresist cylinder 53 ' equal with key light resistance 51 film thickness of spacer；It is exposed by first complete shading area 15
The negativity photoresist layer 5 of light is corroded completely after developed and is formed around the photoresist cylinder 53 ' since the crosslinking reaction may not occur
Annular empty slot 55 '；It is thoroughly crosslinked instead by the negativity photoresist layer 5 that the partial light permeability area 17 is exposed due to failing to
Answer, it is developed after by some erosion, form the barricade 57 that film thickness is less than the black matrix" of key light resistance 51 film thickness of spacer；It is described
The negativity photoresist layer 5 that second complete shading area 19 is exposed is formed after developed by complete corrode since the crosslinking reaction may not occur
The blank area 59 defined by the barricade 57 of the black matrix".
Baking processing procedure is finally carried out, control baking temperature is more than the glass transition temperature of negativity photoresist, so that the photoresist column
Body 53 ' is changed into viscous state and the filling into the empty slot 55 ', so that the phenomenon that photoresist cylinder 53 ' collapses,
The film thickness of photoresist cylinder 53 ' accordingly reduces, and forms film thickness and is less than key light resistance 51 film thickness of spacer and is greater than the barricade of black matrix"
The secondary photoresist spacer 53 of 57 film thickness.
Integral type black matrix" and photoresist spacer can be produced using light shield of the invention, production cost is reduced, subtracts
Few production time, and make the film thickness uniformity of secondary photoresist spacer 53 in integral type black matrix" and photoresist spacer obtained
Preferably, the offset Δ H of key light resistance spacer 51 and secondary photoresist spacer 53 stablizes, and improves the yield of liquid crystal display panel product.
In conclusion the production method of the liquid crystal display panel with integral type black matrix" and photoresist spacer of the invention,
It is different and the characteristic and viscosity flow characteristic of different degrees of cross-linking reaction occurs that energy is illuminated by the light using negativity photoresist layer, using including the
One complete transparent area and the first complete transparent area of complete transparent area spaced second are looped around outside the second complete transparent area
The first complete shading area for enclosing, the partial light permeability area for surrounding the first complete transparent area and the first complete shading area and with part
The light shield in the second complete shading area that the edge of transparent area is connected is exposed negativity photoresist layer, then developed, baking
Processing procedure produces integral type black matrix" and photoresist spacer in liquid crystal display panel, wherein the film thickness of secondary photoresist spacer is less than master
Photoresist spacer film thickness and the barricade film thickness for being greater than black matrix", can reduce light shield quantity, save one of yellow light process, reduce
Production cost reduces the production time, and key light resistance spacer and the offset of secondary photoresist spacer are stablized, and improves liquid crystal display panel
The yield of product.Light shield of the invention can produce integral type black matrix" and photoresist spacer, reduce production cost, reduce
Production time, and make integral type black matrix" and the film thickness uniformity of photoresist spacer secondary in photoresist spacer preferable, key light
The offset for hindering spacer and secondary photoresist spacer is stablized, and the yield of liquid crystal display panel product is improved.
The above for those of ordinary skill in the art can according to the technique and scheme of the present invention and technology
Other various corresponding changes and modifications are made in design, and all these change and modification all should belong to the appended right of the present invention
It is required that protection scope.
Claims (5)
1. a kind of production method with integral type black matrix" Yu the liquid crystal display panel of photoresist spacer, which is characterized in that including
Following steps:
Step S1, substrate (3) are provided, is coated with negativity photoresist layer (5) on the substrate (3)；
Step S2, light shield (1) is provided；
The light shield (1) includes the first complete transparent area (11) and the described first complete transparent area (11) spaced second
Complete transparent area (13), the first complete shading area (15) for being looped around the described second complete transparent area (13) periphery, described in encirclement
The partial light permeability area (17) in the first complete transparent area (11) and the first complete shading area (15) and with the partial light permeability area
(17) the second complete shading area (19) that edge is connected；
Step S3, negativity photoresist layer (5) is exposed using the light shield (1)；
Step S4, develop to the negativity photoresist layer (5) after exposure；
It keeps film thickness constant after the negativity photoresist layer (5) exposed by the described first complete transparent area (11) is developed, forms master
Photoresist spacer (51)；Film thickness is kept after the negativity photoresist layer (5) exposed by the described second complete transparent area (13) is developed
It is constant, form the photoresist cylinder (53 ') equal with key light resistance spacer (51) film thickness；By first complete shading area (15) institute
It is corroded completely after the negativity photoresist layer (5) of exposure is developed and forms the empty slot (55 ') around the photoresist cylinder (53 ')；
By some erosion after the negativity photoresist layer (5) exposed by the partial light permeability area (17) is developed, forms film thickness and be less than key light
Hinder the barricade (57) of the black matrix" of spacer (51) film thickness；The negativity photoresist exposed by second complete shading area (19)
By the complete blank area (59) for corroding and being formed and being defined by the barricade (57) of the black matrix" after layer (5) is developed；
Step S5, baking processing procedure is carried out, control baking temperature is more than the glass transition temperature of negativity photoresist, so that the photoresist cylinder
(53 ') are changed into viscous state and the filling into the empty slot (55 '), so that the film thickness of the photoresist cylinder (53 ') reduces,
Form the secondary photoresist spacer that film thickness is less than key light resistance spacer (51) film thickness and is greater than barricade (57) film thickness of black matrix"
(53)。
2. the production method of the liquid crystal display panel as described in claim 1 with integral type black matrix" and photoresist spacer,
It is characterized in that, the spacing (Δ D) between the profile of the second complete transparent area (13) and the outer profile in the first complete shading area (15)
No more than 7um.
3. the production method of the liquid crystal display panel as claimed in claim 2 with integral type black matrix" and photoresist spacer,
It is characterized in that, the spacing (Δ D) between the profile of the second complete transparent area (13) and the outer profile in the first complete shading area (15)
Equal to 4um.
4. the production method of the liquid crystal display panel as described in claim 1 with integral type black matrix" and photoresist spacer,
It is characterized in that, the light transmittance of the partial light permeability area (17) is greater than 0 and less than 100%.
5. the production method of the liquid crystal display panel as described in claim 1 with integral type black matrix" and photoresist spacer,
It is characterized in that, the step S3 is exposed using ultraviolet light.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
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| CN201710370734.2A CN106980202B (en) | 2017-05-23 | 2017-05-23 | Production method and light shield with integral type black matrix" Yu the liquid crystal display panel of photoresist spacer |
| PCT/CN2017/089249 WO2018214198A1 (en) | 2017-05-23 | 2017-06-20 | Manufacturing method and mask for liquid-crystal display panel having one-piece black matrix and photoresist spacer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710370734.2A CN106980202B (en) | 2017-05-23 | 2017-05-23 | Production method and light shield with integral type black matrix" Yu the liquid crystal display panel of photoresist spacer |
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| WO (1) | WO2018214198A1 (en) |
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| CN107643624A (en) * | 2017-09-22 | 2018-01-30 | 深圳市华星光电半导体显示技术有限公司 | Organic film structure and preparation method thereof |
| CN108511460B (en) * | 2018-03-20 | 2020-11-03 | 深圳市华星光电半导体显示技术有限公司 | A preparation method of an array substrate and a preparation method of a spacer structure thereof |
| CN109541826B (en) * | 2018-10-08 | 2021-04-02 | 惠科股份有限公司 | Manufacturing method of lookup table and manufacturing method of display panel |
| CN109581756A (en) * | 2018-12-24 | 2019-04-05 | 惠科股份有限公司 | Exposure apparatus and spacer manufacturing method |
| CN112242098B (en) * | 2020-10-14 | 2022-08-05 | Tcl华星光电技术有限公司 | Substrate, preparation method thereof and display panel |
| CN114744137B (en) * | 2022-05-07 | 2023-11-28 | 深圳市华星光电半导体显示技术有限公司 | Display panel, preparation method thereof and display device |
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| KR102185102B1 (en) * | 2014-01-10 | 2020-12-02 | 삼성디스플레이 주식회사 | Array substrate, liquid crystal display panel having the same and method of manufacturing the same |
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| CN106980202A (en) | 2017-07-25 |
| WO2018214198A1 (en) | 2018-11-29 |
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