CN105807503A - Spacer, spacer manufacturing method, mask and display device - Google Patents
Spacer, spacer manufacturing method, mask and display device Download PDFInfo
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- CN105807503A CN105807503A CN201610364981.7A CN201610364981A CN105807503A CN 105807503 A CN105807503 A CN 105807503A CN 201610364981 A CN201610364981 A CN 201610364981A CN 105807503 A CN105807503 A CN 105807503A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
- G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
- G02F1/13398—Spacer materials; Spacer properties
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- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
Abstract
The invention belongs to the field of displays and discloses a spacer, a spacer manufacturing method, a mask and a display device. The method includes: coating a photoresist material on a substrate to form a photoresist layer; using the mask for exposure of the photoresist layer, wherein the mask is provided with a pattern area and a non-pattern area, and transmittance of the pattern area is progressively increased from center to edge if the photoresist material is a negative photoresist material and is progressively decreased from center to edge if the photoresist material is a positive photoresist material; subjecting the exposed photoresist layer to development and roasting to obtain the spacer with a flat top surface. Therefore, a contact surface area of the spacer is increased, mechanical strength is enhanced, thickness uniformity of a liquid crystal box between an array substrate and a color film substrate is optimized, and display quality is improved.
Description
Technical field
The present invention relates to field of display, particularly to a kind of chock insulator matter and manufacture method, mask plate, display device.
Background technology
Liquid crystal display has the advantages such as high image quality, low weight, low-power consumption, Low emissivity because of it, is widely used in various field.Display panels is topmost ingredient in liquid crystal display.Display panels generally includes array base palte and described array base palte is oppositely arranged color membrane substrates, the liquid crystal being filled between array base palte and color membrane substrates.In order to ensure thickness and the uniformity of liquid crystal cell, multiple chock insulator matter (PhotoSpacer) is generally set between two substrates to isolate the space injecting liquid crystal.
The manufacturing process of existing PhotoSpacer is as follows: be coated on by photoresist on color membrane substrates or array base palte, is then passed through the steps such as exposure, development, baking and obtains required PhotoSpacer.nullIn the manufacturing process of above-mentioned PhotoSpacer，Owing to PhotoSpacer baking molding requires time for，Before PhotoSpacer molding，PhotoSpacer edge is affected can down subside by tension force，The end face making the PhotoSpacer after making is the low shape of center high surrounding，When to box，The end face of PhotoSpacer only has core to contact with array base palte or color membrane substrates，The area of contact surface is less，The contact surface pressure experienced thus causing unit are becomes excessive，Each PhotoSpacer is compressed by array base palte and color membrane substrates and shortens，And the amount that each PhotoSpacer shortens easily becomes unbalanced，The caliper uniformity making liquid crystal cell between array base palte and color membrane substrates is deteriorated，Show image is caused to obscure.
Summary of the invention
In order to solve before PhotoSpacer molding, PhotoSpacer edge is affected can down subside by tension force, making the end face of the PhotoSpacer after making is the problem of the low shape of center high surrounding, embodiments provides a kind of chock insulator matter and manufacture method, mask plate, display device.Described technical scheme is as follows:
First aspect, embodiments provides a kind of chock insulator matter manufacture method, and described method includes:
Photoresist is coated on substrate and forms photoresist layer；
Using mask plate that described photoresist layer is exposed, described mask plate is provided with area of the pattern and non-area of the pattern；When described photoresist is negativity photoresist, the transmitance of described area of the pattern is incremented by edge by center；When described photoresist is positivity photoresist, the transmitance of described area of the pattern is successively decreased to edge by center；
Described photoresist layer after exposure is developed and toasts, obtains the chock insulator matter with smooth end face.
In a kind of implementation of the embodiment of the present invention, when described photoresist is negativity photoresist, the transmitance at the center of described area of the pattern is 1-a, and the transmitance at the edge of described area of the pattern is A1, the transmitance of described non-area of the pattern is 0,1-a < A1≤1；When described photoresist is positivity photoresist, the transmitance at the center of described area of the pattern is a, and the transmitance at the edge of described area of the pattern is A2, and the transmitance of described non-area of the pattern is 1,0≤A2 < a；Wherein, 1 > a > 0.
In the another kind of implementation of the embodiment of the present invention, described a is more than 15% and less than 25%.
In the another kind of implementation of the embodiment of the present invention, described area of the pattern is rectangle.
In the another kind of implementation of the embodiment of the present invention, the temperature of described baking is 240-270 DEG C.
In the another kind of implementation of the embodiment of the present invention, the time of described baking is 50-70 minute.
Second aspect, the embodiment of the present invention additionally provides a kind of mask plate, is used for preparing chock insulator matter, and described mask plate is provided with area of the pattern and non-area of the pattern；
The transmitance of described area of the pattern is incremented by edge by center；Or, the transmitance of described area of the pattern is successively decreased to edge by center.
In a kind of implementation of the embodiment of the present invention, the transmitance at the center of described area of the pattern is 1-a, and the transmitance at the edge of described area of the pattern is A1, and the transmitance of described non-area of the pattern is 0,1-a < A1≤1；Or, the transmitance at the center of described area of the pattern is a, and the transmitance at the edge of described area of the pattern is A2, and the transmitance of described non-area of the pattern is 1,0≤A2 < a；Wherein, 1 > a > 0.
In the another kind of implementation of the embodiment of the present invention, described a is more than 15% and less than 25%.
In the another kind of implementation of the embodiment of the present invention, described area of the pattern is rectangle.
The third aspect, the embodiment of the present invention additionally provides a kind of chock insulator matter, and described chock insulator matter adopts the chock insulator matter manufacture method described in any one of first aspect to make.
Fourth aspect, the embodiment of the present invention additionally provides a kind of display device, and described display device includes the chock insulator matter described in the third aspect.
The technical scheme that the embodiment of the present invention provides has the benefit that
In the present invention, when photoresist is negativity photoresist, adopt the mask plate that the transmitance of area of the pattern is incremented by edge by center that photoresist layer is exposed, owing to passing through of mask plate area of the pattern is incremented by edge by center, therefore through overexposure, after development, the height of the PhotoSpacer centre of figure formed on substrate is slightly below the height at edge, then under tension, PhotoSpacer edge down subsides, and the edge of the end face of final PhotoSpacer and centre-height keep in one plane.When photoresist is positivity photoresist, adopt the mask plate that the transmitance of area of the pattern is successively decreased to edge by center that photoresist layer is exposed, owing to the transmitance of mask plate area of the pattern is successively decreased to edge by center, therefore through overexposure, after development, the height of the PhotoSpacer centre of figure formed on substrate is slightly below the height at edge, then under tension, PhotoSpacer edge down subsides, and the edge of the end face of final PhotoSpacer and centre-height keep in one plane.Edge and centre-height keep in one plane, make contact surface tend to smooth, increase the area of contact surface, add mechanical strength so that between array base palte and color membrane substrates, the caliper uniformity of liquid crystal cell improves, and improves display quality.
Accompanying drawing explanation
In order to be illustrated more clearly that the technical scheme in the embodiment of the present invention, below the accompanying drawing used required during embodiment is described is briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the premise not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the flow chart of a kind of chock insulator matter manufacture method that the embodiment of the present invention provides；
Fig. 2 is the flow chart of the another kind of chock insulator matter manufacture method that the embodiment of the present invention provides；
Fig. 3 is the structural representation in the chock insulator matter manufacturing process that the embodiment of the present invention provides；
Fig. 4 is the top view of a kind of mask plate that the embodiment of the present invention provides；
Fig. 5 is the structural representation in the chock insulator matter manufacturing process that the embodiment of the present invention provides；
Fig. 6 is the structural representation in the chock insulator matter manufacturing process that the embodiment of the present invention provides；
Fig. 7 is the flow chart of the another kind of chock insulator matter manufacture method that the embodiment of the present invention provides.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiment of the present invention is described further in detail.
Fig. 1 is the flow chart of a kind of chock insulator matter manufacture method that the embodiment of the present invention provides, and referring to Fig. 1, the method includes:
Step 101: photoresist is coated on substrate and forms photoresist layer.
Step 102: use mask plate that photoresist layer is exposed.
Wherein, mask plate is provided with area of the pattern and non-area of the pattern；When photoresist is negativity photoresist, the transmitance of area of the pattern is incremented by edge by center；When photoresist is positivity photoresist, the transmitance of area of the pattern is successively decreased to edge by center.
Wherein, area of the pattern is for forming chock insulator matter by the exposed and developed correspondence position at photoresist layer, and non-area of the pattern is for removing the correspondence position of photoresist layer by exposed and developed.
Step 103: the photoresist layer after exposure is developed and toasts, obtains the chock insulator matter with smooth end face.
Wherein, the end face of chock insulator matter is the one side away from substrate.
In the present invention, when photoresist is negativity photoresist, adopt the mask plate that the transmitance of area of the pattern is incremented by edge by center that photoresist layer is exposed, owing to passing through of mask plate area of the pattern is incremented by edge by center, therefore through overexposure, after development, the height of the PhotoSpacer centre of figure formed on substrate is slightly below the height at edge, then under tension, PhotoSpacer edge down subsides, and the edge of the end face of final PhotoSpacer and centre-height keep in one plane.When photoresist is positivity photoresist, adopt the mask plate that the transmitance of area of the pattern is successively decreased to edge by center that photoresist layer is exposed, owing to the transmitance of mask plate area of the pattern is successively decreased to edge by center, therefore through overexposure, after development, the height of the PhotoSpacer centre of figure formed on substrate is slightly below the height at edge, then under tension, PhotoSpacer edge down subsides, and the edge of the end face of final PhotoSpacer and centre-height keep in one plane.Edge and centre-height keep in one plane, make contact surface tend to smooth, increase the area of contact surface, add mechanical strength so that between array base palte and color membrane substrates, the caliper uniformity of liquid crystal cell improves, and improves display quality.
Fig. 2 is the flow chart of the another kind of chock insulator matter manufacture method that the embodiment of the present invention provides, and in the embodiment depicted in figure 2, to adopt negativity photoresist to make PhotoSpacer, the present invention will be described, and referring to Fig. 2, the method includes:
Step 201: negativity photoresist is coated on substrate and forms photoresist layer.
Specifically, aforesaid substrate can be color membrane substrates or array base palte, therefore step 201 may include that and is coated on color membrane substrates or array base palte by the negativity photoresist making PhotoSpacer.
Wherein, negativity photoresist can be negative photoresist, and coating method includes but not limited to spin coating.
As it is shown on figure 3, form photoresist layer 21 on the base plate 20.
Step 202: use mask plate that photoresist layer is exposed.
Further, the method can also include: making the mask plate for preparing chock insulator matter, mask plate is provided with area of the pattern and non-area of the pattern；The transmitance of area of the pattern is incremented by edge by center, and the transmitance at the center of area of the pattern is 1-a, the transmitance at the edge of area of the pattern is A1, and the transmitance of non-area of the pattern is 0,1-a < A1≤1,1 > a > 0.
Wherein, the value of a is determined by characteristic and the coating thickness of the photoresist for making PhotoSpacer.Its common span is 25% > a > 15%, if the value of a is excessive, after development PhotoSpacer edge than center high too much, can cause that the PhotoSpacer edge after molding is higher than center；The value of a is too small, after development PhotoSpacer edge than center high very little, can cause that the edge of the PhotoSpacer after molding is lower than center.
Wherein, the transmitance of area of the pattern can by center to edge uniform increments.
In order to form the PhotoSpacer of rectangle, area of the pattern is rectangle.Certainly, if needing to be formed the PhotoSpacer of other shapes, then area of the pattern can also be other shapes, and the present invention is without limitation.
As shown in Figure 4, mask plate 10 is provided with area of the pattern 11 and non-area of the pattern 12；The transmitance of area of the pattern 11 is incremented by edge by center, and the transmitance at the center of area of the pattern 11 is 1-a, the transmitance at the edge of area of the pattern 11 is A1, the transmitance of non-area of the pattern 12 is 0,1-a < A1≤1,1 > a > 0.
What deserves to be explained is, the quantity of the area of the pattern 11 shown in Fig. 4 is only for example, and in reality, the quantity of the PhotoSpacer that the quantity of area of the pattern 11 makes according to actual needs is arranged.
In the present embodiment, A1 is preferably 1, strengthens exposure effect.
Step 203: the photoresist layer after exposure is developed and toasts, obtains the chock insulator matter with smooth end face.
After overexposure, development, the height at the center of the PhotoSpacer22 formed on the base plate 20 is slightly below the height at edge, as shown in Figure 5.
After the steps such as overbaking, because being affected by tension force, PhotoSpacer22 edge down subsides, and the edge of end face and centre-height keep in one plane, as shown in Figure 6.The edge of PhotoSpacer22 and centre-height keep in one plane making contact surface tend to smooth, increase the area of contact surface, add mechanical strength, homogeneity improves, reduce compression ratio (by reduction length and original length ratio), thus ensure that the caliper uniformity of liquid crystal cell between array base palte and color membrane substrates, reach the purpose prevented because the produced show image of thickness of liquid crystal box inequality obscures.
Baking temperature is too low, it cannot be guaranteed that drying effect, temperature is too high, can PhotoSpacer structure be damaged, and baking time is too short, it cannot be guaranteed that drying effect, overlong time, can damage PhotoSpacer structure, therefore in embodiments of the present invention, baking time can be 50-70 minute, and baking temperature can be 240-270 DEG C.Select suitable temperature and time, it is possible under ensureing the premise that PhotoSpacer structure is not destroyed, it is ensured that cured effect simultaneously.
Fig. 7 is the flow chart of the another kind of chock insulator matter manufacture method that the embodiment of the present invention provides, and the manufacture method that this manufacture method provides with Fig. 2 is distinctive in that: adopting positivity photoresist to make PhotoSpacer, referring to Fig. 7, the method includes:
Step 301: positivity photoresist is coated on substrate and forms photoresist layer.
Specifically, aforesaid substrate can be color membrane substrates or array base palte, therefore step 301 may include that and is coated on color membrane substrates or array base palte by the positivity photoresist making PhotoSpacer.
As it is shown on figure 3, form photoresist layer 21 on the base plate 20.
Wherein, positivity photoresist can be positive photoresist, and coating method includes but not limited to spin coating.
Step 302: use mask plate that photoresist layer is exposed.
Further, the method can also include: making the mask plate for preparing chock insulator matter, mask plate is provided with area of the pattern and non-area of the pattern；The transmitance of area of the pattern is successively decreased to edge by center, and the transmitance at the center of area of the pattern is a, and the transmitance at the edge of area of the pattern is A2, and the transmitance of non-area of the pattern is 1,0≤A2 < a；Wherein, 1 > a > 0.
Wherein, the value of a is determined by characteristic and the coating thickness of the photoresist layer for making PhotoSpacer.Its common span is 25% > a > 15%, if the value of a is excessive, after development PhotoSpacer edge than center high too much, can cause that the PhotoSpacer edge after molding is higher than center；The value of a is too small, after development PhotoSpacer edge than center high very little, can cause that the edge of the PhotoSpacer after molding is lower than center.
Wherein, the transmitance of area of the pattern uniformly can be successively decreased to edge by center.
In order to form the PhotoSpacer of rectangle, area of the pattern is rectangle.Certainly, if needing to be formed the PhotoSpacer of other shapes, then area of the pattern can also be other shapes, and the present invention is without limitation.
As shown in Figure 4, mask plate 10 is provided with area of the pattern 11 and non-area of the pattern 12；The transmitance of area of the pattern 11 is successively decreased to edge by center, and the transmitance at the center of area of the pattern 11 is a, and the transmitance at the edge of area of the pattern 11 is A2, and the transmitance of non-area of the pattern 12 is 1,0≤A2 < a；Wherein, 1 > a > 0.
What deserves to be explained is, the quantity of the area of the pattern 11 shown in Fig. 4 is only for example, and in reality, the quantity of the PhotoSpacer that the quantity of area of the pattern 11 makes according to actual needs is arranged.
In the present embodiment, A2 is preferably 0, strengthens exposure effect.
Step 303: the photoresist layer after exposure is developed and toasts, obtains the chock insulator matter with smooth end face.
After overexposure, development, the height at the center of the PhotoSpacer22 formed on the base plate 20 is slightly below the height at edge, as shown in Figure 5.
After the steps such as overbaking, because being affected by tension force, PhotoSpacer22 edge down subsides, and the edge of end face and centre-height keep in one plane, as shown in Figure 6.The edge of PhotoSpacer22 and centre-height keep in one plane making contact surface tend to smooth, increase the area of contact surface, add mechanical strength, homogeneity improves, reduce compression ratio (by reduction length and original length ratio), thus ensure that the caliper uniformity of liquid crystal cell between array base palte and color membrane substrates, reach the purpose prevented because the produced show image of thickness of liquid crystal box inequality obscures.
Baking temperature is too low, it cannot be guaranteed that drying effect, temperature is too high, can PhotoSpacer structure be damaged, and baking time is too short, it cannot be guaranteed that drying effect, overlong time, can damage PhotoSpacer structure, therefore in embodiments of the present invention, baking time can be 50-70 minute, and baking temperature can be 240-270 DEG C.Select suitable temperature and time, it is possible under ensureing the premise that PhotoSpacer structure is not destroyed, it is ensured that cured effect simultaneously.
The embodiment of the present invention additionally provides a kind of mask plate, and this mask plate is provided with area of the pattern and non-area of the pattern.The transmitance of area of the pattern is incremented by edge by center；Or, the transmitance of area of the pattern is successively decreased to edge by center.
Specifically, mask plate includes Aska-Rid. coating, and Aska-Rid. coating includes area of the pattern and non-area of the pattern.In embodiments of the present invention, area of the pattern and non-area of the pattern include following two kinds of set-up modes.
In one implementation, the transmitance of area of the pattern is incremented by edge by center, and the transmitance at the center of area of the pattern is 1-a, the transmitance at the edge of area of the pattern is A1, the transmitance of non-area of the pattern is 0,1-a < A1≤1,1 > a > 0.
In this implementation, Aska-Rid. coating is adopted to realize the mask plate that light transmittance is different, specifically can pass through curved surface Laser lithography (such as curved surface laser writing technology), form the area of the pattern with curved surface, and the thickness at the center of area of the pattern is more than the thickness at edge, the transmitance of area of the pattern is made to be incremented by edge by center.
Wherein, the value of a is determined by characteristic and the coating thickness of the photoresist for making PhotoSpacer.Its common span is 25% > a > 15%.If the value of a is excessive, after development PhotoSpacer edge than center high too much, can cause that the PhotoSpacer edge after molding is higher than center；And the value of a is too small, after development PhotoSpacer edge than center high very little, can cause that the edge of the PhotoSpacer after molding is lower than center.
Wherein, in order to form the PhotoSpacer of rectangle, area of the pattern is rectangle.Certainly, if needing to be formed the PhotoSpacer of other shapes, then area of the pattern can also be other shapes, and the present invention is without limitation.
In another kind of implementation, the transmitance of area of the pattern is successively decreased to edge by center, and the transmitance at the center of area of the pattern is a, the transmitance at the edge of area of the pattern is A2, the transmitance of non-area of the pattern is 1,0≤A2 < a, 1 > a > 0.
In this implementation, mask plate surface includes Aska-Rid. coating, by curved surface Laser lithography, forms the area of the pattern with curved surface at Aska-Rid. coating surface, and the thickness at the center of area of the pattern is less than the thickness at edge, the transmitance of area of the pattern is made to be successively decreased to edge by center.
Wherein, the value of a is determined by characteristic and the coating thickness of the photoresist for making PhotoSpacer.Its common span is 25% > a > 15%, if the value of a is excessive, after development PhotoSpacer edge than center high too much, can cause that the PhotoSpacer edge after molding is higher than center；The value of a is too small, after development PhotoSpacer edge than center high very little, can cause that the edge of the PhotoSpacer after molding is lower than center.
Wherein, in order to form the PhotoSpacer of rectangle, area of the pattern is rectangle.Certainly, if needing to be formed the PhotoSpacer of other shapes, then area of the pattern can also be other shapes, and the present invention is without limitation.
In the present invention, when photoresist is negativity photoresist, adopt the mask plate that the transmitance of area of the pattern is incremented by edge by center that photoresist layer is exposed, owing to passing through of mask plate area of the pattern is incremented by edge by center, therefore through overexposure, after development, the height of the PhotoSpacer centre of figure formed on substrate is slightly below the height at edge, then under tension, PhotoSpacer edge down subsides, and the edge of the end face of final PhotoSpacer and centre-height keep in one plane.When photoresist is positivity photoresist, adopt the mask plate that the transmitance of area of the pattern is successively decreased to edge by center that photoresist layer is exposed, owing to the transmitance of mask plate area of the pattern is successively decreased to edge by center, therefore through overexposure, after development, the height of the PhotoSpacer centre of figure formed on substrate is slightly below the height at edge, then under tension, PhotoSpacer edge down subsides, and the edge of the end face of final PhotoSpacer and centre-height keep in one plane.Edge and centre-height keep in one plane, make contact surface tend to smooth, increase the area of contact surface, add mechanical strength so that between array base palte and color membrane substrates, the caliper uniformity of liquid crystal cell improves, and improves display quality.
The embodiment of the present invention additionally provides a kind of chock insulator matter, and chock insulator matter adopts the chock insulator matter manufacture method shown in Fig. 1, Fig. 2 or Fig. 7 to make.
In the present invention, when photoresist is negativity photoresist, adopt the mask plate that the transmitance of area of the pattern is incremented by edge by center that photoresist layer is exposed, owing to the transmitance of mask plate area of the pattern is incremented by edge by center, therefore through overexposure, after development, the height of the PhotoSpacer centre of figure formed on substrate is slightly below the height at edge, then under tension, PhotoSpacer edge down subsides, and the edge of the end face of final PhotoSpacer and centre-height keep in one plane.When photoresist is positivity photoresist, adopt the mask plate that the transmitance of area of the pattern is successively decreased to edge by center that photoresist layer is exposed, owing to the transmitance of mask plate area of the pattern is successively decreased to edge by center, therefore through overexposure, after development, the height of the PhotoSpacer centre of figure formed on substrate is slightly below the height at edge, then under tension, PhotoSpacer edge down subsides, and the edge of the end face of final PhotoSpacer and centre-height keep in one plane.Edge and centre-height keep in one plane, make contact surface tend to smooth, increase the area of contact surface, add mechanical strength so that between array base palte and color membrane substrates, the caliper uniformity of liquid crystal cell improves, and improves display quality.
The embodiment of the present invention additionally provides a kind of display device, and this display device includes aforementioned chock insulator matter.
In the specific implementation, the display device that the embodiment of the present invention provides can be any product with display function or the parts such as mobile phone, panel computer, television set, display, notebook computer, DPF, navigator.
In the present invention, when photoresist is negativity photoresist, adopt the mask plate that the transmitance of area of the pattern is incremented by edge by center that photoresist layer is exposed, owing to passing through of mask plate area of the pattern is incremented by edge by center, therefore through overexposure, after development, the height of the PhotoSpacer centre of figure formed on substrate is slightly below the height at edge, then under tension, PhotoSpacer edge down subsides, and the edge of the end face of final PhotoSpacer and centre-height keep in one plane.When photoresist is positivity photoresist, adopt the mask plate that the transmitance of area of the pattern is successively decreased to edge by center that photoresist layer is exposed, owing to the transmitance of mask plate area of the pattern is successively decreased to edge by center, therefore through overexposure, after development, the height of the PhotoSpacer centre of figure formed on substrate is slightly below the height at edge, then under tension, PhotoSpacer edge down subsides, and the edge of the end face of final PhotoSpacer and centre-height keep in one plane.Edge and centre-height keep in one plane, make contact surface tend to smooth, increase the area of contact surface, add mechanical strength so that between array base palte and color membrane substrates, the caliper uniformity of liquid crystal cell improves, and improves display quality.
These are only presently preferred embodiments of the present invention, not in order to limit the present invention, all within the spirit and principles in the present invention, any amendment of making, equivalent replacement, improvement etc., should be included within protection scope of the present invention.
Claims (12)
1. a chock insulator matter manufacture method, it is characterised in that described method includes:
Photoresist is coated on substrate and forms photoresist layer；
Using mask plate that described photoresist layer is exposed, described mask plate is provided with area of the pattern and non-area of the pattern；When described photoresist is negativity photoresist, the transmitance of described area of the pattern is incremented by edge by center；When described photoresist is positivity photoresist, the transmitance of described area of the pattern is successively decreased to edge by center；
Described photoresist layer after exposure is developed and toasts, obtains the chock insulator matter with smooth end face.
2. method according to claim 1, it is characterized in that, when described photoresist is negativity photoresist, the transmitance at the center of described area of the pattern is 1-a, the transmitance at the edge of described area of the pattern is A1, the transmitance of described non-area of the pattern is 0,1-a < A1≤1；When described photoresist is positivity photoresist, the transmitance at the center of described area of the pattern is a, and the transmitance at the edge of described area of the pattern is A2, and the transmitance of described non-area of the pattern is 1,0≤A2 < a；Wherein, 1 > a > 0.
3. method according to claim 2, it is characterised in that described a is more than 15% and less than 25%.
4. method according to claim 1, it is characterised in that described area of the pattern is rectangle.
5. method according to claim 1, it is characterised in that the temperature of described baking is 240-270 DEG C.
6. method according to claim 1, it is characterised in that the time of described baking is 50-70 minute.
7. a mask plate, is used for preparing chock insulator matter, and described mask plate is provided with area of the pattern and non-area of the pattern；
It is characterized in that, the transmitance of described area of the pattern is incremented by edge by center；Or, the transmitance of described area of the pattern is successively decreased to edge by center.
8. mask plate according to claim 7, it is characterised in that the transmitance at the center of described area of the pattern is 1-a, the transmitance at the edge of described area of the pattern is A1, and the transmitance of described non-area of the pattern is 0,1-a < A1≤1；Or, the transmitance at the center of described area of the pattern is a, and the transmitance at the edge of described area of the pattern is A2, and the transmitance of described non-area of the pattern is 1,0≤A2 < a；Wherein, 1 > a > 0.
9. mask plate according to claim 8, it is characterised in that described a is more than 15% and less than 25%.
10. the mask plate according to any one of claim 7 to 9, it is characterised in that described area of the pattern is rectangle.
11. a chock insulator matter, it is characterised in that described chock insulator matter adopts the chock insulator matter manufacture method described in any one of claim 1 to 6 to make.
12. a display device, it is characterised in that described display device includes the chock insulator matter described in claim 11.
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