CN106971760A - Threshold voltage method of calibration, device and NAND memory device based on nand flash memory - Google Patents
Threshold voltage method of calibration, device and NAND memory device based on nand flash memory Download PDFInfo
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- CN106971760A CN106971760A CN201710212512.8A CN201710212512A CN106971760A CN 106971760 A CN106971760 A CN 106971760A CN 201710212512 A CN201710212512 A CN 201710212512A CN 106971760 A CN106971760 A CN 106971760A
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- 238000003860 storage Methods 0.000 claims abstract description 19
- 238000012795 verification Methods 0.000 claims description 19
- 238000012545 processing Methods 0.000 claims description 8
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C29/50004—Marginal testing, e.g. race, voltage or current testing of threshold voltage
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
- G11C16/105—Circuits or methods for updating contents of nonvolatile memory, especially with 'security' features to ensure reliable replacement, i.e. preventing that old data is lost before new data is reliably written
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C2029/1202—Word line control
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Abstract
The embodiment of the invention discloses a kind of threshold voltage method of calibration, device and NAND memory device based on nand flash memory, this method is applied to NAND memory device, the storage device includes a plurality of wordline and multiple nand memory units, every wordline is connected with corresponding memory cell respectively, wherein, the wordline includes dummy word lines and data wordline, and every group of data wordline is corresponding with every group of dummy word lines, and methods described includes：When carrying out erasing operation to selected memory cell, the erasing voltage in the corresponding data wordline of selected memory cell is added on dummy word lines corresponding with the data wordline, to perform erasing operation to the corresponding memory cell of the dummy word lines.The embodiment of the present invention can prevent the influence caused by the reading and writing data accuracy that the threshold voltage of dummy word lines correspondence memory cell is moved to right to data wordline correspondence memory cell, and the threshold voltage of dummy word lines correspondence memory cell is adjusted into normal range (NR).
Description
Technical field
The present embodiments relate to memory technology, more particularly to a kind of threshold voltage verification side based on nand flash memory
Method, device and NAND memory device.
Background technology
Nand flash memory is one kind of Flash internal memories, belongs to nonvolatile semiconductor memory.Nand flash memory includes many numbers
According to block, each data block is made up of lots of memory unit, for reading and writing data.These memory cells are arranged in array, battle array
A specific memory cell is generally selected via a wordline (word-line, WL) and a pair of bit lines (bit-line, BL) in row
Take, wordline is typically coupled to one or more control gates of each memory cell in a line, bit line is generally coupled to (BL pair)
The storage o'clock of each memory cell is to a sensing amplifier in one row.By controlling the high-low voltage of wordline and bit line to realize
Operation is wiped in read-write to memory cell.
Fig. 1 (a) show in a part of array the control gate of the semiconductor transistor as memory cell with it is corresponding
The schematic diagram of wordline, wherein, SGD two switching tubes corresponding with SGS, by controlling the two switching tubes to realize to intermediate portion
Memory cell selection, i.e. corresponding memory cells of WL0, WL1 ... WLn, WL0, WL1 ... WLn can be described as data
Wordline (data WL), just can be written and read wiping operation after selection.In nand flash memory, in order to ensure the data WL of edge,
That is WL0 and WLn, it is identical with middle WL environment, add virtual (dummy) WL edge data WL at, i.e. DDWL1 with
DSWL1.In work, Dummy WL correspondences memory cell should be all the time in erasing (erase) state, its threshold voltage vt distributions
It is shown in solid in such as Fig. 1 (b).
But, with the increase of access times, Dummy WL are by read operation interference, write operation interference and adjacent WL
Influence so that the threshold voltage vt of Dummy WL correspondence memory cells is offset to the right, as shown in Fig. 1 (b) dotted lines.Work as Dummy
The vt of WL correspondence memory cells is when moving to right, and can influence to cause the vt of the corresponding memory cells of its adjacent data WL to move to right, so that
Influence the accuracy of the reading and writing data of data WL correspondence memory cells.
The content of the invention
The embodiment of the present invention provides a kind of threshold voltage method of calibration based on nand flash memory, device and NAND storages and set
It is standby, to solve to influence data wordline correspondence to deposit because being moved to right the threshold voltage of dummy word lines correspondence memory cell in the prior art
The problem of reading and writing data accuracy of storage unit.
In a first aspect, the embodiments of the invention provide a kind of threshold voltage method of calibration based on nand flash memory, being applied to
NAND memory device, the storage device include a plurality of wordline and multiple nand memory units, every wordline respectively with it is corresponding
Memory cell connection, wherein, the wordline includes dummy word lines and data wordline, every group of data wordline and every group of virtual word
Line is corresponding, and methods described includes：
When carrying out erasing operation to selected memory cell, by the wiping in the corresponding data wordline of selected memory cell
Except voltage, it is added on dummy word lines corresponding with the data wordline, to be performed to the corresponding memory cell of the dummy word lines
Erasing operation.
Further, after the erasing voltage is added on dummy word lines corresponding with the data wordline, the side
Method also includes：
Respectively plus the dummy word lines of the erasing voltage add verifying voltage, and deposit corresponding with the dummy word lines is verified
Whether the threshold voltage of storage unit reaches preset range, wherein, the verifying voltage is less than the reading voltage of memory cell；
When verifying the threshold voltage and being not reaching to the preset range, to the selected memory cell again
When carrying out erasing operation, continue the erasing voltage in the corresponding data wordline of selected memory cell, be added to and the data
On the corresponding dummy word lines of wordline；
Aforesaid operations are repeated, untill verifying that the threshold voltage reaches the preset range.
Further, whether the threshold voltage of checking memory cell corresponding with the dummy word lines reaches default
Scope includes：
Erasing verification operation is performed based on the verifying voltage respectively to the corresponding memory cell of the dummy word lines；
When reading data 1 according to the erasing verification operation, verify the threshold voltage and reached the preset range；
When reading data 0 according to the erasing verification operation, verify the threshold voltage and be not reaching to the default model
Enclose.
Further, the number of times of the checking is not more than the default erasing times of the memory cell
Second aspect, the embodiments of the invention provide a kind of threshold voltage calibration equipment based on nand flash memory, is applied to
NAND memory device, the storage device include a plurality of wordline and multiple nand memory units, every wordline respectively with it is corresponding
Memory cell connection, wherein, the wordline includes dummy word lines and data wordline, every group of data wordline and every group of virtual word
Line is corresponding, and described device includes：
Erasing voltage applies module, for when carrying out erasing operation to selected memory cell, by selected memory list
Erasing voltage in the corresponding data wordline of member, is added on dummy word lines corresponding with the data wordline, with to the virtual word
The corresponding memory cell of line performs erasing operation.
Further, described device also includes：
The erasing voltage, is added to and the data wordline pair by authentication module for applying module in the erasing voltage
After on the dummy word lines answered, following operation is performed：
Respectively plus the dummy word lines of the erasing voltage add verifying voltage, and deposit corresponding with the dummy word lines is verified
Whether the threshold voltage of storage unit reaches preset range, wherein, the verifying voltage is less than the reading voltage of memory cell；
When verifying the threshold voltage and being not reaching to the preset range, to the selected memory cell again
When carrying out erasing operation, continue the erasing voltage in the corresponding data wordline of selected memory cell, be added to and the data
On the corresponding dummy word lines of wordline；
Aforesaid operations are repeated, untill verifying that the threshold voltage reaches the preset range.
Further, the authentication module includes：
The erasing voltage, is added to and the number by verifying voltage applying unit for applying module in the erasing voltage
After on the corresponding dummy word lines of wordline, respectively the dummy word lines of the erasing voltage are added to add verifying voltage；
Authentication unit, for performing wiping respectively to the corresponding memory cell of the dummy word lines based on the verifying voltage
Except verification operation, and according to it is described erasing verification operation read data 1 when, verify the threshold voltage reached it is described pre-
If scope, when reading data 0 according to the erasing verification operation, verify the threshold voltage and be not reaching to the default model
Enclose；
The result processing unit, described preset is not reaching to for verifying the threshold voltage in the authentication unit
During scope, control the erasing voltage to apply module when carrying out erasing operation again to the selected memory cell, continue
By the erasing voltage in the corresponding data wordline of selected memory cell, dummy word lines corresponding with the data wordline are added to
On.
Further, the number of times of the checking is not more than the default erasing times of the memory cell.
The third aspect, the embodiments of the invention provide a kind of NAND memory device, the storage device includes firmware, a plurality of
Wordline and multiple nand memory units, every wordline are connected with corresponding memory cell respectively, wherein, the wordline includes
Dummy word lines and data wordline, every group of data wordline are corresponding with every group of dummy word lines, and the firmware includes base as described above
In the threshold voltage calibration equipment of nand flash memory.
The embodiment of the present invention by selected memory cell carry out erasing operation when, by erasing voltage be added to it is described
On memory cell on the corresponding dummy word lines of data wordline, erasing operation is carried out to it, so as to prevent because of dummy word lines pair
The threshold voltage of memory cell is answered to move to right the influence caused to the reading and writing data accuracy of data wordline correspondence memory cell,
The threshold voltage of dummy word lines correspondence memory cell is adjusted to normal range (NR).
Brief description of the drawings
Fig. 1 (a) is the control gate and corresponding wordline of semiconductor transistor in the prior art as memory cell
Schematic diagram；
Fig. 1 (b) is the changes in distribution schematic diagram of the threshold voltage of dummy word lines correspondence memory cell in Fig. 1 (a)；
Fig. 2 is the flow chart of the threshold voltage method of calibration based on nand flash memory in the embodiment of the present invention one；
Fig. 3 is the flow chart of the threshold voltage method of calibration based on nand flash memory in the embodiment of the present invention two；
Fig. 4 is the structural representation of the threshold voltage calibration equipment based on nand flash memory in the embodiment of the present invention three.
Embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention, rather than limitation of the invention.It also should be noted that, in order to just
Part related to the present invention rather than entire infrastructure are illustrate only in description, accompanying drawing.
It should be mentioned that some exemplary embodiments are described as before exemplary embodiment is discussed in greater detail
The processing described as flow chart or method.Although each step is described as the processing of order, many of which by flow chart
Step can be implemented concurrently, concomitantly or simultaneously.In addition, the order of each step can be rearranged.When its operation
The processing can be terminated during completion, it is also possible to the additional step being not included in accompanying drawing.The processing can be with
Corresponding to method, function, code, subroutine, subprogram etc..
Embodiment one
Fig. 2 is the flow chart of the threshold voltage method of calibration based on nand flash memory in the embodiment of the present invention one, this implementation
Example is applicable to the situation of the memory cell threshold voltage drift based on nand flash memory, applied to NAND memory device, the party
Method can be performed by the threshold voltage calibration equipment based on nand flash memory, and the device can use the side of software and/or hardware
Formula is realized, it is possible to be integrated in NAND memory device.
Wherein, the storage device include a plurality of wordline and multiple nand memory units, every wordline respectively with it is corresponding
Memory cell connection, the wordline includes dummy word lines and data wordline, every group of data wordline and every group of dummy word lines phase
Correspondence.As shown in Fig. 2 the threshold voltage method of calibration based on nand flash memory includes：
S210, to selected memory cell carry out erasing operation when, by the corresponding data wordline of selected memory cell
On erasing voltage, be added on dummy word lines corresponding with the data wordline, with to the corresponding memory list of the dummy word lines
Member performs erasing operation.
The characteristics of due to nand flash memory chip itself, write operation is from " 1 " to be write the data in memory cell as " 0 ",
Erasing is to realize the operation from " 0 " to " 1 ".Wherein, the data of memory cell are write as to the process of " 0 " from " 1 ", are exactly to floating
The process that grid injects electronics is put, if the data to be write are exactly " 1 ", the memory cell can not be write.
And erasing operation is exactly by the whole derived processes of the electronics in floating grid.
Can apply erasing voltage in the wordline of memory cell during erasing operation is carried out, to complete
Electronics export to memory cell floating grid.Because the memory cell that dummy word lines are connected there occurs in use
The phenomenon that threshold voltage is moved to right, it is possible to when carrying out erasing operation to selected memory cell, by selected memory cell
Erasing voltage in corresponding data wordline, is also added on dummy word lines corresponding with the data wordline, with to the virtual word
The corresponding memory cell of line performs erasing operation.Because the least unit of erasing operation is data block, so, selected memory
Unit actually just refers to whole memory cells in selected data block.
The floating grid in its corresponding memory cell can be made because of other reasonses by applying erasing voltage to dummy word lines
The electronics of accumulation is exported, it is to avoid the threshold voltage of dummy word lines correspondence memory cell is moved to right, so as to realize to the storage
The correction of the threshold voltage of device unit, and processing procedure is simple and convenient, it is easy to accomplish, also improve and dummy word lines correspondence deposited
The efficiency of the threshold voltage correction of storage unit.
The embodiment of the present invention by selected memory cell carry out erasing operation when, by erasing voltage be added to it is described
On memory cell on the corresponding dummy word lines of data wordline, erasing operation is carried out to it, prevented because dummy word lines correspondence is deposited
The threshold voltage of storage unit moves to right the influence caused to the reading and writing data accuracy of data wordline correspondence memory cell, by void
The threshold voltage for intending wordline correspondence memory cell is adjusted to normal range (NR).
Embodiment two
Fig. 3 is the flow chart for the threshold voltage method of calibration based on nand flash memory that the embodiment of the present invention two is provided.This reality
Example is applied on the basis of above-described embodiment, the threshold voltage method of calibration based on nand flash memory is optimized.
As shown in figure 3, the threshold voltage method of calibration based on nand flash memory includes：
S310, to selected memory cell carry out erasing operation when, by the corresponding data wordline of selected memory cell
On erasing voltage, be added on dummy word lines corresponding with the data wordline, with to the corresponding memory list of the dummy word lines
Member performs erasing operation.
S320, it is respectively plus the dummy word lines of the erasing voltage add verifying voltage, and verifies and the dummy word lines pair
Whether the threshold voltage for the memory cell answered reaches preset range, wherein, the verifying voltage is less than the reading of memory cell
Power taking pressure.
Wherein, the preset range of threshold voltage can be production technology, the operation principle of memory cell according to chip
And the preset range that many-sided reference element such as working environment is determined.The preset range of memory cell threshold voltage can be right
One data page or the memory cell of data block carry out the data that test statisticses are obtained.
Wherein, verifying voltage is less than the reading voltage of memory cell, you can utilize a calibration to be interpreted as working as
The small verifying voltage of voltage is often read, whether the threshold voltage of checking dummy word lines correspondence memory cell reaches preset range,
If it can reach preset range, when reading data using normal read voltage, accurate data can be read.
Because when the threshold voltage of dummy word lines correspondence memory cell is offset to the right, the result directly resulted in is to this
The reading that memory cell application reading voltage is obtained is " 0 ", and reading is no longer " 1 ", and can influence data word adjacent thereto
The threshold voltage of the corresponding memory cell of line also shifts, so as to cause read-write error.
Therefore, on the basis of the technical program, it is preferred that described to verify memory list corresponding with the dummy word lines
Whether the threshold voltage of member reaches that preset range includes：Based on the verifying voltage to the corresponding memory list of the dummy word lines
Member performs erasing verification operation respectively；When reading data 1 according to erasing verification operation, verify the threshold voltage and reached institute
State preset range；When reading data 0 according to erasing verification operation, verify the threshold voltage and be not reaching to the default model
Enclose.So set and be advantageous in that the reading result that can be obtained according to verifying voltage determines the corresponding memory list of dummy word lines
Whether the threshold voltage of member reaches preset range, and method is easy and visual result that draw is accurate, it is not easy to mistake occur.
S330, when verifying the threshold voltage and being not reaching to the preset range, to the selected memory list
When member carries out erasing operation again, continue the erasing voltage in the corresponding data wordline of selected memory cell, be added to and institute
State on the corresponding dummy word lines of data wordline.
S340, aforesaid operations are repeated, untill verifying that the threshold voltage reaches the preset range.
When verifying the threshold voltage and being not reaching to the preset range, erasing operation can be carried out simultaneously again to it
Verify whether to meet preset range, if do not met also, the checking threshold voltage is erased to always and reaches the default model
Untill enclosing.
On the basis of above-mentioned technical proposal, whether a kind of threshold voltage of verifying memory unit is present embodiments provided
The method for meeting the method for preset range and carrying out circulating correction to threshold voltage.The result obtained according to verifying voltage
It can determine whether the threshold voltage of memory cell meets preset range, and in checking and trimming process, operating method
It is easy, it can be ensured that accuracy and improve threshold voltage correction efficiency that threshold voltage is verified and corrected.
On the basis of above-mentioned technical proposal, it is preferred that the number of times of the checking is not more than the pre- of the memory cell
If erasing times, wherein, default erasing times can be the erasing times set before memory cell dispatches from the factory.This is preset
Erasing times can ensure that memory cell is not wiped free of the too deep number of times for causing to wipe.The benefit so set is can be with
Avoid because the threshold voltage of some memory cells is not up to preset range all the time in data block, and persistently repeat erasing
Other memory cells in the data block are caused to cross erasing, it is possible to avoid causing checking time because of memory cell failure
Several Infinite Cyclics, cost of idle time and energy cost.
Embodiment three
Fig. 4 is the structural representation of the threshold voltage calibration equipment based on nand flash memory in the embodiment of the present invention three, should
Device is applied to NAND memory device, and the storage device includes a plurality of wordline and multiple nand memory units, every wordline
Connected respectively with corresponding memory cell, wherein, the wordline includes dummy word lines and data wordline, every group of data wordline with
Every group of dummy word lines are corresponding, as shown in figure 4, the device is specifically included：
Erasing voltage applies module 410, for when carrying out erasing operation to selected memory cell, by selected memory
Erasing voltage in the corresponding data wordline of unit, is added on dummy word lines corresponding with the data wordline, with virtual to this
The corresponding memory cell of wordline performs erasing operation.
The embodiment of the present invention by selected memory cell carry out erasing operation when, by erasing voltage be added to it is described
On memory cell on the corresponding dummy word lines of data wordline, erasing operation is carried out to it, to prevent because of dummy word lines correspondence
The threshold voltage of memory cell moves to right the influence caused to the reading and writing data accuracy of data wordline correspondence memory cell, will
The threshold voltage of dummy word lines correspondence memory cell is adjusted to normal range (NR).
On the basis of the various embodiments described above, described device also includes：
The erasing voltage, is added to and the data word by authentication module 420 for applying module in the erasing voltage
After on the corresponding dummy word lines of line, following operation is performed：
Respectively plus the dummy word lines of the erasing voltage add verifying voltage, and deposit corresponding with the dummy word lines is verified
Whether the threshold voltage of storage unit reaches preset range, wherein, the verifying voltage is less than the reading voltage of memory cell；
When verifying the threshold voltage and being not reaching to the preset range, to the selected memory cell again
When carrying out erasing operation, continue the erasing voltage in the corresponding data wordline of selected memory cell, be added to and the data
On the corresponding dummy word lines of wordline；
Aforesaid operations are repeated, untill verifying that the threshold voltage reaches the preset range.
On the basis of the various embodiments described above, the authentication module 420 includes：
The erasing voltage, is added to and the number by verifying voltage applying unit for applying module in the erasing voltage
After on the corresponding dummy word lines of wordline, respectively the dummy word lines of the erasing voltage are added to add verifying voltage；
Authentication unit, for performing wiping respectively to the corresponding memory cell of the dummy word lines based on the verifying voltage
Except verification operation, and according to it is described erasing verification operation read data 1 when, verify the threshold voltage reached it is described pre-
If scope, when reading data 0 according to the erasing verification operation, verify the threshold voltage and be not reaching to the default model
Enclose；
The result processing unit, described preset is not reaching to for verifying the threshold voltage in the authentication unit
During scope, control the erasing voltage to apply module when carrying out erasing operation again to the selected memory cell, continue
By the erasing voltage in the corresponding data wordline of selected memory cell, dummy word lines corresponding with the data wordline are added to
On.
On the basis of the various embodiments described above, the number of times of the checking is not more than the default erasing time of the memory cell
Number.
Said apparatus or product can perform the method that any embodiment of the present invention is provided, and possess the corresponding work(of execution method
Can module and beneficial effect.
Example IV
The embodiment of the present invention four provide a kind of NAND memory device, the storage device include firmware, a plurality of wordline and
Multiple nand memory units, every wordline is connected with corresponding memory cell respectively, wherein, the wordline includes virtual word
Line and data wordline, every group of data wordline are corresponding with every group of dummy word lines, and the firmware is included described in above-described embodiment
Threshold voltage calibration equipment based on nand flash memory.The NAND memory device can be provided by the embodiment of the present invention to be dodged based on NAND
The threshold voltage calibration equipment deposited, using the threshold voltage method of calibration based on nand flash memory accordingly to NAND memory device
Memory cell on dummy word lines carries out the verification of threshold voltage.The NAND memory device can realize the base that the present invention is provided
The beneficial effect brought in the threshold voltage method of calibration of nand flash memory.
Note, above are only presently preferred embodiments of the present invention and institute's application technology principle.It will be appreciated by those skilled in the art that
The invention is not restricted to specific embodiment described here, can carry out for a person skilled in the art it is various it is obvious change,
Readjust and substitute without departing from protection scope of the present invention.Therefore, although the present invention is carried out by above example
It is described in further detail, but the present invention is not limited only to above example, without departing from the inventive concept, also
Other more equivalent embodiments can be included, and the scope of the present invention is determined by scope of the appended claims.
Claims (9)
1. a kind of threshold voltage method of calibration based on nand flash memory, applied to NAND memory device, the storage device includes
A plurality of wordline and multiple nand memory units, every wordline are connected with corresponding memory cell respectively, wherein, the wordline
Including dummy word lines and data wordline, every group of data wordline is corresponding with every group of dummy word lines, it is characterised in that methods described bag
Include：
When carrying out erasing operation to selected memory cell, by the erasing electricity in the corresponding data wordline of selected memory cell
Pressure, is added on dummy word lines corresponding with the data wordline, to perform erasing to the corresponding memory cell of the dummy word lines
Operation.
2. according to the method described in claim 1, it is characterised in that be added to the erasing voltage corresponding with the data wordline
Dummy word lines on after, methods described also includes：
Respectively plus the dummy word lines of the erasing voltage add verifying voltage, and memory corresponding with the dummy word lines is verified
Whether the threshold voltage of unit reaches preset range, wherein, the verifying voltage is less than the reading voltage of memory cell；
When verifying the threshold voltage and being not reaching to the preset range, carried out again to the selected memory cell
During erasing operation, continue the erasing voltage in the corresponding data wordline of selected memory cell, be added to and the data wordline
On corresponding dummy word lines；
Aforesaid operations are repeated, untill verifying that the threshold voltage reaches the preset range.
3. method according to claim 2, it is characterised in that checking memory list corresponding with the dummy word lines
Whether the threshold voltage of member reaches that preset range includes：
Erasing verification operation is performed based on the verifying voltage respectively to the corresponding memory cell of the dummy word lines；
When reading data 1 according to the erasing verification operation, verify the threshold voltage and reached the preset range；
When reading data 0 according to the erasing verification operation, verify the threshold voltage and be not reaching to the preset range.
4. method according to claim 2, it is characterised in that the number of times of the checking is not more than the memory cell
Default erasing times.
5. a kind of threshold voltage calibration equipment based on nand flash memory, applied to NAND memory device, the storage device includes
A plurality of wordline and multiple nand memory units, every wordline are connected with corresponding memory cell respectively, wherein, the wordline
Including dummy word lines and data wordline, every group of data wordline is corresponding with every group of dummy word lines, it is characterised in that described device bag
Include：
Erasing voltage applies module, for when carrying out erasing operation to selected memory cell, by selected memory cell pair
The erasing voltage in data wordline answered, is added on dummy word lines corresponding with the data wordline, with to the dummy word lines pair
The memory cell answered performs erasing operation.
6. device according to claim 5, it is characterised in that described device also includes：
Authentication module, it is corresponding with the data wordline for being added to the erasing voltage in erasing voltage application module
After on dummy word lines, following operation is performed：
Respectively plus the dummy word lines of the erasing voltage add verifying voltage, and memory corresponding with the dummy word lines is verified
Whether the threshold voltage of unit reaches preset range, wherein, the verifying voltage is less than the reading voltage of memory cell；
When verifying the threshold voltage and being not reaching to the preset range, carried out again to the selected memory cell
During erasing operation, continue the erasing voltage in the corresponding data wordline of selected memory cell, be added to and the data wordline
On corresponding dummy word lines；
Aforesaid operations are repeated, untill verifying that the threshold voltage reaches the preset range.
7. device according to claim 6, it is characterised in that the authentication module includes：
The erasing voltage, is added to and the data word by verifying voltage applying unit for applying module in the erasing voltage
After on the corresponding dummy word lines of line, respectively the dummy word lines of the erasing voltage are added to add verifying voltage；
Authentication unit, is tested for performing erasing respectively to the corresponding memory cell of the dummy word lines based on the verifying voltage
Card operation, and when reading data 1 according to the erasing verification operation, verify the threshold voltage and reached the default model
Enclose, when reading data 0 according to the erasing verification operation, verify the threshold voltage and be not reaching to the preset range；
The result processing unit, the preset range is not reaching to for verifying the threshold voltage in the authentication unit
When, control the erasing voltage to apply module when carrying out erasing operation again to the selected memory cell, continue institute
The erasing voltage in the corresponding data wordline of memory cell is selected, is added on dummy word lines corresponding with the data wordline.
8. device according to claim 6, it is characterised in that the number of times of the checking is not more than the memory cell
Default erasing times.
9. a kind of NAND memory device, the storage device includes firmware, a plurality of wordline and multiple nand memory units, every
Wordline is connected with corresponding memory cell respectively, wherein, the wordline includes dummy word lines and data wordline, every group of data word
Line is corresponding with every group of dummy word lines, it is characterised in that the firmware include as any one of claim 5-8 based on
The threshold voltage calibration equipment of nand flash memory.
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