CN106920723A - A kind of scanning focused system and electron beam control method - Google Patents
A kind of scanning focused system and electron beam control method Download PDFInfo
- Publication number
- CN106920723A CN106920723A CN201710128987.9A CN201710128987A CN106920723A CN 106920723 A CN106920723 A CN 106920723A CN 201710128987 A CN201710128987 A CN 201710128987A CN 106920723 A CN106920723 A CN 106920723A
- Authority
- CN
- China
- Prior art keywords
- electron
- electrode
- focusing
- controlling
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 75
- 238000000034 method Methods 0.000 title claims abstract description 29
- 230000001133 acceleration Effects 0.000 claims abstract description 33
- 230000003287 optical effect Effects 0.000 claims description 17
- 239000002131 composite material Substances 0.000 claims description 13
- 238000001514 detection method Methods 0.000 claims description 4
- 230000000979 retarding effect Effects 0.000 claims 1
- 239000000523 sample Substances 0.000 description 31
- 238000007654 immersion Methods 0.000 description 9
- 230000004075 alteration Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012472 biological sample Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/21—Means for adjusting the focus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/261—Details
- H01J37/265—Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
The invention discloses a kind of scanning focused system, it is characterised in that the system includes：Electron source, electronics accelerating structure, focusing structure, deflection structure, photoelectrons slow structure and high voltage control structure；Wherein, the electron source, for producing electron beam；The electronics accelerating structure, for accelerating to the electron beam that the electron source is produced；The focusing structure, for being focused to the electron beam after acceleration；The deflection structure, for carrying out deflection scanning to the electron beam after focusing；The photoelectrons slow structure, for producing a decelerating field, to slowing down through the electron beam after deflection scanning；The high voltage control structure, the voltage for controlling the electron source, the electronics accelerating structure and the photoelectrons slow structure.The invention also discloses a kind of electron beam control method.
Description
Technical Field
The invention relates to the field of scanning electron microscopes, in particular to a scanning focusing system and an electron beam control method.
Background
Scanning electron microscopes have been widely used in various fields such as semiconductor manufacturing, material science, and life science as observation instruments appearing in the 60's of the 20 th century. Compared with an optical microscope, the scanning electron microscope has higher resolution than the optical microscope because electrons in the scanning electron microscope have higher energy than photons after being accelerated and have a wavelength much smaller than a light wavelength according to the de broglie's material wave theory; however, the scanning electron microscope has a disadvantage of a small scanning range and a relatively slow imaging speed.
In the field of semiconductor industry, in order to improve the yield efficiency and reliability of semiconductor devices such as integrated circuits and memory devices, it is important to detect defects that may exist in the devices during the device production process. With the development of semiconductor processes, the size of electronic devices is also getting smaller and smaller, and line processes smaller than 20nm have also been implemented; therefore, the requirement for resolution of electronic device inspection instruments (such as scanning electron microscopes) is continuously increasing, and the requirement for scanning speed of electronic device inspection instruments is also increasing.
The resolution, the size of the scanning field and the scanning speed of the scanning electron microscope are determined by a scanning focusing system in the scanning electron microscope; to improve the resolution of a scanning electron microscope, aberrations of a scanning focusing system in a scanning electron microscope may be reduced by a variable axis objective focusing system and an immersion objective focusing system. In addition, when electrons with too high energy irradiate a sample, especially a biological sample, the sample can be damaged; the electron deceleration structure in the scanning focusing system can enable the landing energy of electrons irradiated on a sample to be less than 3KeV, and can also play a role in reducing aberration. Therefore, how to realize a scanning electron microscope, which has a large scanning field and high resolution, and can keep the landing energy of electrons less than 3KeV is a problem to be solved.
Disclosure of Invention
In view of the above, it is desirable to provide a scanning focusing system and an electron beam control method, which can achieve a scanning electron microscope using the scanning focusing system with both large scanning field and high resolution, and simultaneously maintain the landing energy of electrons less than 3 KeV.
The technical scheme of the embodiment of the invention is realized as follows:
an embodiment of the present invention provides a scanning focusing system, including: the electron source, electron acceleration structure, focusing structure, deflection structure, electron deceleration structure and high voltage control structure; wherein,
the electron source is used for generating an electron beam;
the electron acceleration structure is used for accelerating the electron beam generated by the electron source;
the focusing structure is used for focusing the accelerated electron beams;
the deflection structure is used for deflecting and scanning the focused electron beams;
the electron deceleration structure is used for generating a deceleration field and decelerating the electron beam after deflection scanning;
and the high-voltage control structure is used for controlling the voltages of the electron source, the electron acceleration structure and the electron deceleration structure.
In the above solution, the system further includes: and the detection structure is used for detecting signal electrons generated after the electron beams act on the sample.
In the above embodiment, the electron acceleration structure is an anode.
In the above aspect, the electronic deceleration structure includes: a first electrode and a second electrode, the second electrode being connected to the sample.
In the above aspect, the deflecting structure includes: a first electrical deflector and a second electrical deflector.
In the above solution, the high voltage control structure is used for controlling the voltage-V of the electron source0The values of (A) are: v is less than or equal to-30 KV0≤-10KV；
Controlling the voltage value of the electronic acceleration structure to be 0;
controlling the voltage values of the first electrode and the second electrode to be V0+V，0V≤V≤3KV。
In the above aspect, the electron acceleration structure is a third electrode in the high-voltage tube.
In the above aspect, the electronic deceleration structure includes: a fifth electrode, a sixth electrode and a fourth electrode in the high pressure tube, the sixth electrode being connected to the sample.
In the above aspect, the deflecting structure includes: a first magnetic deflector and a second magnetic deflector.
In the above solution, the high voltage control structure is used for controlling the voltage-V of the electron source0The values of (A) are: -3KV less than or equal to-V0≤0V；
Controlling the voltage + V of the third and fourth electrodes2The value of (1) is less than or equal to 10KV and + V2≤30KV；
And controlling the voltage values of the fifth electrode and the sixth electrode to be 0.
In the above scheme, the heights of the fifth electrode and the outer pole shoe in the focusing structure are the same, and the horizontal distance between the fifth electrode and the outer pole shoe in the focusing structure is adjustable.
The embodiment of the invention also provides an electron beam control method, which comprises the following steps:
controlling the voltages of the electron source, the electron accelerating structure and the electron decelerating structure;
the electron beam generated by the electron source moves in the direction far away from the optical central axis through the electron accelerating structure and the first deflector in the deflecting structure;
the electron beams moving in the direction far away from the optical central axis converge after passing through a second deflector and a focusing structure in the deflection structure;
and the converged electron beam is decelerated by the electron deceleration structure and then irradiated to a sample to be detected.
In the above scheme, the method further comprises: and detecting signal electrons generated after the electron beams irradiate the sample to be detected.
In the above solution, the converging of the electron beam moving in the direction away from the optical central axis after passing through the second deflector and the focusing structure in the focusing structure includes:
and the field generated by the second deflector in the focusing structure and the focusing magnetic field generated by the focusing structure form a swinging type composite focusing field, and the swinging type composite focusing field converges the electron beams moving along the direction far away from the optical central axis.
In the above aspect, the electronic deceleration structure includes: a first electrode and a second electrode, the second electrode being connected to the sample.
In the above aspect, the deflecting structure includes: a first electrical deflector and a second electrical deflector.
In the above scheme, the controlling voltages of the electron source, the electron acceleration structure, and the electron deceleration structure includes:
controlling the voltage-V of the electron source0The values of (A) are: v is less than or equal to-30 KV0≤-10KV；
Controlling the voltage value of the electronic acceleration structure to be 0;
controlling the voltage values of the first electrode and the second electrode to be V0+V，0V≤V≤3KV。
In the above scheme, the heights of the first electrode and the outer pole shoe in the focusing structure are the same, and the distance between the first electrode and the outer pole shoe in the focusing structure is adjusted to determine the swing type composite focusing field.
In the above aspect, the electron acceleration structure is a third electrode in the high-voltage tube.
In the above aspect, the electronic deceleration structure includes: a fifth electrode, a sixth electrode and a fourth electrode in the high pressure tube, the sixth electrode being connected to the sample.
In the above aspect, the deflecting structure includes: a first magnetic deflector and a second magnetic deflector.
In the above scheme, the controlling voltages of the electron source, the electron acceleration structure, and the electron deceleration structure includes:
controlling the voltage-V of the electron source0The values of (A) are: -3KV less than or equal to-V0≤0V；
Controlling the voltage + V of the third and fourth electrodes2The value of (1) is less than or equal to 10KV and + V2≤30KV；
And controlling the voltage values of the fifth electrode and the sixth electrode to be 0.
In the above scheme, the heights of the fifth electrode and the outer pole shoe in the focusing structure are the same, and the horizontal distance between the fifth electrode and the outer pole shoe in the focusing structure is adjusted to determine the swing type composite focusing field.
The scanning focusing system and the electron beam control method provided by the embodiment of the invention comprise: the electron source, electron acceleration structure, focusing structure, deflection structure, electron deceleration structure and high voltage control structure; wherein the electron source is used for generating an electron beam; the electron acceleration structure is used for accelerating the electron beam generated by the electron source; the focusing structure is used for focusing the accelerated electron beams; the deflection structure is used for deflecting and scanning the focused electron beams; the electron deceleration structure is used for generating a deceleration field and decelerating the electron beam after deflection scanning; and the high-voltage control structure is used for controlling the voltages of the electron source, the electron acceleration structure and the electron deceleration structure. Thus, the voltages of the electron source, the electron acceleration structure and the electron deceleration structure are controlled through the high-voltage control structure, so that the landing energy of electrons is less than 3 KeV; the magnetic field generated by the focusing structure is adjusted by adjusting the distance between the decelerating structure and the focusing structure, and a swinging type and semi-immersed type focusing field is determined under the action of the deflecting structure, so that the resolution and the scanning field of an electron microscope applying the scanning focusing system are improved.
Drawings
FIG. 1 is a schematic diagram of a scan focusing system according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a second exemplary embodiment of a scanning focusing system;
FIG. 3 is a schematic process flow diagram of an electron beam control method according to an embodiment of the present invention;
FIG. 4 is a structural diagram of a scanning focusing system for implementing an electron beam control method according to an embodiment of the present invention.
Detailed Description
The invention is further illustrated by the figures and examples of the present application.
Example one
An embodiment of the present invention provides a scanning focusing system, and a structure of the scanning focusing system 100, as shown in fig. 1, includes: an electron source 101, an electron accelerating structure 102, a focusing structure 104, a deflecting structure 105, an electron decelerating structure 106 and a high voltage control structure 107; wherein,
the electron source 101 is used for generating an electron beam;
the electron acceleration structure 102 is configured to accelerate the electron beam generated by the electron source 101;
the focusing structure 104 is configured to focus the accelerated electron beam;
the deflection structure 105 is used for performing deflection scanning on the focused electron beam;
the electron deceleration structure 106 is configured to generate a deceleration field to decelerate the deflected and scanned electron beam;
the high voltage control structure 107 is used for controlling the voltages of the electron source 101, the electron acceleration structure 102 and the electron deceleration structure 106.
In the embodiment of the present invention, the electron source 101 is a thermal emission electron source or a field emission electron source.
In the embodiment of the invention, the high-voltage control structure 107 is used for controlling the voltage-V of the electron source 1010The values of (A) are: v is less than or equal to-30 KV0Less than or equal to-10 KV; the electron acceleration structure 102 is an anode, and the anode is grounded, so that the voltage of the electron acceleration structure 102 is 0; electricity generated by the electron source 101The beamlets are accelerated by electron accelerating structure 102 and then travel down optical center axis 103.
In an embodiment of the present invention, the focusing structure 104 is an objective lens, a field generated by the focusing structure 104 is a semi-immersion type, and the focusing structure 104 includes: an excitation coil 104a, an objective lens inner pole piece 104b and an objective lens outer pole piece 104 c.
In the embodiment of the present invention, the deflecting structure 105 is an electric deflecting system, and includes a first deflecting device 105a and a second deflecting device 105 b; the first deflection device 105a and the second deflection device 105b each comprise a deflection in the X-direction and in the Y-direction, whereby the deflection structure 105 enables a two-dimensional scanning of the electron beam over the sample.
In the embodiment of the present invention, the field generated by the second deflecting device 105b and the focusing magnetic field generated by the focusing structure 104 form a composite focusing field, and the composite focusing field is a swinging type or semi-submerged type focusing field; the focusing field converges the electron beam far away from the optical central axis 103 to form a converged electron beam; compared with a non-immersed focusing field, the semi-immersed focusing field has higher use efficiency, and the resolution of a scanning focusing system is further improved; compared with a full immersion type focusing field, the semi-immersion type focusing field can ensure that the scanning focusing system has certain resolution, and meanwhile, the scanning range of the scanning focusing system is increased.
The fast scanning of the scanning focus system can be achieved due to the fast nature of the electrical deflection system.
In an embodiment of the present invention, the electronic deceleration structure 106 includes: a first electrode 106a and a second electrode 106b, the second electrode 106b being connected to the sample; the voltage value of the first electrode 106a is-V1The voltage value of the second electrode 106b is-V2Controlling a voltage value-V of the first electrode 106a by a high voltage control structure 1071A voltage value-V of the second electrode 106b2Comprises the following steps: -V1≈-V2≈-V0+ V; wherein V is more than or equal to 0V and less than or equal to 3 KV; the first electrode 106a and the second electrode 106b together form an electric field that slows the electron beam before it hits the sample to avoid high energy electrons damaging the sample when interacting with the sample.
In the embodiment of the present invention, the first electrode 106a and the outer pole shoe 104c of the objective lens are located at the same height, which can reduce the working distance of the scanning focusing system, thereby improving the resolution of the scanning focusing system; and the horizontal distance between the first electrode 106a and the outer pole shoe 104c of the objective lens is d, and the value of d can be flexibly adjusted according to actual needs. The first electrode 106a is made of a magnetic conductive material, so that the magnetic field intensity of the objective lens at the sample position can be enhanced, and the magnetic excitation current is further reduced; the first electrode 106a made of magnetic conductive material can control the magnetic field distribution generated by the focusing structure 104, so as to achieve matching with the deflecting structure 105.
In the embodiment of the present invention, when the voltage values of the electron source 101, the first electrode 106a, the second electrode 106b, and the electron acceleration structure 102 are obtained by the control of the high voltage control structure 107 within the above ranges, the energy of electrons irradiated onto the sample is less than 3 KeV; meanwhile, the electronic deceleration structure 106 can reduce the aberration of the scanning focusing system and improve the resolution of the scanning focusing system.
In an embodiment of the present invention, the scanning focusing system further includes: a detecting structure 108, wherein the detecting structure 108 is used for detecting signal electrons generated after the electron beam acts on the sample; the detection structure 108 may be a secondary electron detector or a backscattered electron detector.
Example two
An embodiment of the present invention provides a scanning focusing system, and a structure of the scanning focusing system 200, as shown in fig. 2, includes: an electron source 201, an electron accelerating structure 202, a focusing structure 204, a deflecting structure 205, an electron decelerating structure 206 and a high voltage control structure 207; wherein,
the electron source 201 is used for generating an electron beam;
the electron acceleration structure 202 is used for accelerating the electron beam generated by the electron source 201;
the focusing structure 204 is configured to focus the accelerated electron beam;
the deflection structure 205 is configured to perform deflection scanning on the focused electron beam;
the electron deceleration structure 206 is configured to generate a deceleration field to decelerate the deflected and scanned electron beam;
the high voltage control structure 207 is configured to control voltages of the electron source 201, the electron accelerating structure 202, and the electron decelerating structure 206.
In the embodiment of the invention, the electron source 201 is a thermal emission electron source or a field emission electron source, and the voltage value of the electron source is-V0And-3 KV is less than or equal to-V0≤0V。
In the embodiment of the present invention, the electron acceleration structure 202 is a third electrode 202a in the high-voltage tube; wherein the voltage value of the high-voltage tube is + V2The range of (1) is less than or equal to 10KV and + V2Less than or equal to 30KV, and the voltage of the third electrode in the high-voltage tube is + V2(ii) a The high-pressure pipe is made of a non-magnetic material; the electron beam generated by the electron source 201 is accelerated by the electron acceleration structure 202 and then moves downward along the optical central axis 203.
In an embodiment of the present invention, the focusing structure 204 is an objective lens, a field generated by the focusing structure 204 is a semi-immersion type, and the focusing structure 204 includes: an excitation coil 204a, an objective lens inner pole piece 204b and an objective lens outer pole piece 204 c.
In the embodiment of the present invention, the deflecting structure 205 is a magnetic deflecting system, and includes a first deflecting device 205a and a second deflecting device 205 b; said first deflection means 205a and said second deflection means 205b each comprise a deflection in the X-direction and in the Y-direction, so that said deflection structure 205 enables a two-dimensional scanning of the electron beam on the sample; the resolution of the scanning focusing system can be improved due to the characteristics of high sensitivity and small aberration of the magnetic deflection system.
In the embodiment of the present invention, the field generated by the second deflecting device 205b and the focusing magnetic field generated by the focusing structure 204 form a composite focusing field, and the composite focusing field is a swinging type or semi-submerged type focusing field; the focusing field converges the electron beams far away from the optical central axis 203 to form converged electron beams; compared with a non-immersed focusing field, the semi-immersed focusing field has higher use efficiency, and the resolution of a scanning focusing system is further improved; compared with a full immersion type focusing field, the semi-immersion type focusing field can ensure that the scanning focusing system has certain resolution, and meanwhile, the scanning range of the scanning focusing system is increased.
In an embodiment of the present invention, the electronic deceleration structure 206 includes: a fifth electrode 206a, a sixth electrode 206b and a fourth electrode 202b in the high voltage tube; wherein the voltage of the fourth electrode is the same as the voltage of the high voltage tube; the sixth electrode 206b is connected to the sample, and the voltage values of the fifth electrode 206a and the sixth electrode 206b are + V1Control of + V1The value of (c) is extremely small, just greater than zero. The fifth electrode 206a, the sixth electrode 206b and the fourth electrode 202b in the high-voltage tube together form an electric field, so that the electron beam is decelerated before being irradiated to the sample to prevent high-energy electrons from damaging the sample when interacting with the sample.
In the embodiment of the present invention, the fifth electrode 206a and the outer pole shoe 204c of the objective lens are located at the same height, which can reduce the working distance of the scanning focusing system, thereby improving the resolution of the scanning focusing system; and the horizontal distance between the fifth electrode 206a and the objective lens outer pole shoe 204c is d, and the value of d can be flexibly adjusted according to actual needs. The fifth electrode 206a is made of a magnetic conductive material, so that the magnetic field intensity of the objective lens at the sample position can be enhanced, and the magnetic excitation current is further reduced; the fifth electrode 206a made of magnetic conductive material can control the magnetic field distribution generated by the focusing structure 204, so as to achieve matching with the deflecting structure 205.
In the embodiment of the present invention, when the voltage values of the electron source 201, the fifth electrode 206a, the sixth electrode 206b, and the electron acceleration structure 202 are obtained by the control of the high voltage control structure 207 within the above ranges, the energy of electrons irradiated onto the sample is less than 3 KeV; meanwhile, the electronic deceleration structure 206 can reduce the aberration of the scanning focusing system and improve the resolution of the scanning focusing system.
In an embodiment of the present invention, the scanning focusing system further includes: a detecting structure 208, wherein the detecting structure 208 is used for detecting signal electrons generated after the electron beam acts on the sample; the detection structure 208 may be a secondary electron detector or a backscattered electron detector.
EXAMPLE III
Based on the scanning focusing system of the first embodiment or the second embodiment of the present invention, a third embodiment of the present invention further provides an electron beam control method, which is shown in fig. 3 and 4, and a processing flow of the electron beam control method includes the following steps:
step S101, controlling the voltage of the electron source, the electron acceleration structure and the electron deceleration structure;
specifically, when the electron acceleration structure 302 is an anode, the voltage-V of the electron source 301 is controlled by a high voltage control structure in a scanning focusing system0The values of (A) are: v is less than or equal to-30 KV0Less than or equal to-10 KV; controlling the voltage of the electron acceleration structure 302 to be 0 through a high voltage control structure; controlling the voltage value-V of the first electrode in the deceleration structure by a high-voltage control structure1Voltage value-V of the second electrode2Comprises the following steps: -V1≈-V2≈-V0+ V; wherein V is more than or equal to 0V and less than or equal to 3 KV;
where the electron accelerating structure 302 is an electrode in a high voltage tube,controlling the voltage value of the electron source to be-V by a high-voltage control structure in the scanning focusing system0And-3 KV is less than or equal to-V0Less than or equal to 0V; the voltage value + V of the high-voltage tube, the third electrode and the fourth electrode is controlled by a high-voltage control structure2The range of (1) is less than or equal to 10KV and + V2Less than or equal to 30 KV; the voltage values of the fifth electrode and the sixth electrode in the electronic deceleration structure are controlled to be + V through the high-voltage control structure1，+V1The value of (a) is extremely small, just greater than zero; thus, the energy of electrons irradiated on the sample can be less than 3 KeV;
here, the electron source is a thermal emission electron source or a field emission electron source.
Step S102, the electron beam generated by the electron source moves along the direction far away from the optical central axis through the first deflectors in the electron acceleration structure and the deflection structure;
here, the deflection structure includes a first deflection device 305a and a second deflection device 305b, and the deflection structure may be an electric deflection system or a magnetic deflection system;
the electron accelerating structure 302 may be an anode, or an electrode in a high voltage tube.
Step S103, converging the electron beam 310 moving in the direction away from the optical central axis after passing through a second deflection device and a focusing structure in the deflection structure;
here, the field generated by the second deflecting device 305b and the focusing magnetic field generated by the focusing structure 304 form a composite focusing field, which is a wobble-type, semi-immersion-type focusing field 306; the focusing field converges the electron beam far from the optical central axis 303 to form a converged electron beam 307; compared with a non-immersed focusing field, the semi-immersed focusing field has higher use efficiency, and the resolution of a scanning focusing system is further improved; compared with a full immersion type focusing field, the semi-immersion type focusing field can ensure that the scanning focusing system has certain resolution, and meanwhile, the scanning range of the scanning focusing system is increased.
Wherein said first deflection means 305a and said second deflection means 305b each comprise a deflection in the X-direction and in the Y-direction, said deflection structure thus enabling a two-dimensional scanning of the electron beam over the sample.
And step S104, the converged electron beams are decelerated by the electron deceleration structure and then irradiated to a sample to be detected.
The method further comprises the following steps:
step S105, detecting signal electrons generated after the electron beams irradiate the sample to be detected;
specifically, the secondary electron detector 308 or the backscattered electron detector may be used to detect signal electrons generated after the electron beam acts on the sample 309 to be measured.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention.
Claims (24)
1. A scanning focusing system, the system comprising: the electron source, electron acceleration structure, focusing structure, deflection structure, electron deceleration structure and high voltage control structure; wherein,
the electron source is used for generating an electron beam;
the electron acceleration structure is used for accelerating the electron beam generated by the electron source;
the focusing structure is used for focusing the accelerated electron beams;
the deflection structure is used for deflecting and scanning the focused electron beams;
the electron deceleration structure is used for generating a deceleration field and decelerating the electron beam after deflection scanning;
and the high-voltage control structure is used for controlling the voltages of the electron source, the electron acceleration structure and the electron deceleration structure.
2. The system of claim 1, further comprising: and the detection structure is used for detecting signal electrons generated after the electron beams act on the sample.
3. The system of claim 1, wherein the electron accelerating structure is an anode.
4. The system of any one of claims 1 to 3, wherein the electronic deceleration structure comprises: a first electrode and a second electrode, the second electrode being connected to the sample.
5. The system of claim 4, wherein the deflecting structure comprises: a first electrical deflector and a second electrical deflector.
6. The system of claim 4, wherein the high voltage control arrangement is configured to control the electron source voltage-V0The values of (A) are: v is less than or equal to-30 KV0≤-10KV；
Controlling the voltage value of the electronic acceleration structure to be 0;
controlling the voltage values of the first electrode and the second electrode to be V0+V，0V≤V≤3KV。
7. The system of claim 4, wherein the first electrode has the same height as an outer pole shoe of the focusing structure, and wherein the horizontal spacing between the first electrode and the outer pole shoe of the focusing structure is adjustable.
8. A system according to claim 1 or 2, wherein the electron accelerating structure is a third electrode in a high pressure tube.
9. The system of claim 8, wherein the electronic retarding structure comprises: a fifth electrode, a sixth electrode and a fourth electrode in the high pressure tube, the sixth electrode being connected to the sample.
10. The system of claim 9, wherein the deflecting structure comprises: a first magnetic deflector and a second magnetic deflector.
11. The system of claim 9, wherein the high voltage control arrangement is configured to control the electron source voltage-V0The values of (A) are: -3KV less than or equal to-V0≤0V；
Controlling the voltage + V of the third and fourth electrodes2The value of (1) is less than or equal to 10KV and + V2≤30KV；
And controlling the voltage values of the fifth electrode and the sixth electrode to be 0.
12. The system of claim 9, wherein the fifth electrode has the same height as the outer pole piece of the focusing structure, and wherein the horizontal spacing between the fifth electrode and the outer pole piece of the focusing structure is adjustable.
13. A method of controlling an electron beam, the method comprising:
controlling the voltages of the electron source, the electron accelerating structure and the electron decelerating structure;
the electron beam generated by the electron source moves in the direction far away from the optical central axis through the electron accelerating structure and the first deflector in the deflecting structure;
the electron beams moving in the direction far away from the optical central axis converge after passing through a second deflector and a focusing structure in the deflection structure;
and the converged electron beam is decelerated by the electron deceleration structure and then irradiated to a sample to be detected.
14. The method of claim 13, further comprising:
and detecting signal electrons generated after the electron beams irradiate the sample to be detected.
15. The method of claim 13, wherein said converging the electron beam moving in a direction away from the optical central axis after passing through a second deflector in the focusing structure and the focusing structure comprises:
and the field generated by the second deflector in the focusing structure and the focusing magnetic field generated by the focusing structure form a swinging type composite focusing field, and the swinging type composite focusing field converges the electron beams moving along the direction far away from the optical central axis.
16. The method of any one of claims 13 to 15, wherein the electronic deceleration structure comprises: a first electrode and a second electrode, the second electrode being connected to the sample.
17. The method of claim 16, wherein the deflecting structure comprises: a first electrical deflector and a second electrical deflector.
18. The method of claim 16, wherein controlling the voltages of the electron source, the electron accelerating structure, and the electron decelerating structure comprises:
controlling the voltage-V of the electron source0The values of (A) are: v is less than or equal to-30 KV0≤-10KV；
Controlling the voltage value of the electronic acceleration structure to be 0;
controlling the voltage values of the first electrode and the second electrode to be V0+V，0V≤V≤3KV。
19. The method of claim 16, wherein the first electrode has the same height as an outer pole shoe of the focusing structure, and wherein the spacing between the first electrode and the outer pole shoe of the focusing structure is adjusted to determine a rocking composite focusing field.
20. A method according to claim 13 or 14, wherein the electron accelerating structure is a third electrode in a high voltage tube.
21. The method of claim 20, wherein the electronic deceleration structure comprises: a fifth electrode, a sixth electrode and a fourth electrode in the high pressure tube, the sixth electrode being connected to the sample.
22. The method of claim 21, wherein the deflecting structure comprises: a first magnetic deflector and a second magnetic deflector.
23. The method of claim 21, wherein controlling the voltages of the electron source, the electron accelerating structure, and the electron decelerating structure comprises:
controlling the voltage-V of the electron source0The values of (A) are: -3KV less than or equal to-V0≤0V；
Controlling the voltage + V of the third and fourth electrodes2The value of (1) is less than or equal to 10KV and + V2≤30KV；
And controlling the voltage values of the fifth electrode and the sixth electrode to be 0.
24. The method of claim 21, wherein the fifth electrode has the same height as the outer pole piece of the focusing structure, and wherein the horizontal spacing between the fifth electrode and the outer pole piece of the focusing structure is adjusted to determine the rocking composite focusing field.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710128987.9A CN106920723A (en) | 2017-03-06 | 2017-03-06 | A kind of scanning focused system and electron beam control method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710128987.9A CN106920723A (en) | 2017-03-06 | 2017-03-06 | A kind of scanning focused system and electron beam control method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106920723A true CN106920723A (en) | 2017-07-04 |
Family
ID=59460593
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710128987.9A Pending CN106920723A (en) | 2017-03-06 | 2017-03-06 | A kind of scanning focused system and electron beam control method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106920723A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108198677A (en) * | 2017-12-29 | 2018-06-22 | 中国科学院电工研究所 | A kind of focusing magnetic field regulator control system for nano particle |
| CN109192642A (en) * | 2018-08-30 | 2019-01-11 | 中国科学院国家空间科学中心 | A kind of pulsar X-ray simulation source radiating coherence |
| CN109300759A (en) * | 2017-11-21 | 2019-02-01 | 聚束科技（北京）有限公司 | Low energy scanning electron microscope system, scanning electron microscope system and sample detection method |
| CN114256043A (en) * | 2020-12-02 | 2022-03-29 | 聚束科技（北京）有限公司 | Electron beam system |
| WO2024083068A1 (en) * | 2023-01-18 | 2024-04-25 | 聚束科技（北京）有限公司 | Objective lens system for scanning electron microscope, and scanning focusing method |
| US12224153B2 (en) | 2020-12-02 | 2025-02-11 | Focus-Ebeam Technology (Beijing) Co., Ltd. | Electron microscope |
Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0437024A (en) * | 1990-05-31 | 1992-02-07 | Shimadzu Corp | Manufacturing equipment of semiconductor element |
| US6407387B1 (en) * | 1998-11-30 | 2002-06-18 | Advantest Corp. | Particle beam apparatus |
| CN1404617A (en) * | 2000-01-27 | 2003-03-19 | Ict半导体集成电路测试有限公司 | Objective lens for a charged particle beam device |
| CN1996547A (en) * | 2002-03-21 | 2007-07-11 | 汉民微测科技股份有限公司 | Electron-optical focusing, deflection and signal collection method of rotary deceleration submerged objective lens |
| CN101022075A (en) * | 2006-02-15 | 2007-08-22 | 株式会社日立高新技术 | Scanning electron microscope and apparatus for detecting defect |
| JP2007250560A (en) * | 1995-10-19 | 2007-09-27 | Hitachi Ltd | Scanning electron microscope |
| US20070228276A1 (en) * | 2006-03-30 | 2007-10-04 | Hiroshi Makino | Inspection Apparatus and Inspection Method |
| CN101388317A (en) * | 2008-03-21 | 2009-03-18 | 北京威孚物理科技有限公司 | Scanning electronic microscope |
| US20090256076A1 (en) * | 2008-04-14 | 2009-10-15 | Hitachi High-Technologies Corporation | Charged particle beam apparatus permitting high-resolution and high-contrast observation |
| JP4853581B2 (en) * | 2010-08-11 | 2012-01-11 | 株式会社日立製作所 | Inspection method and inspection apparatus using electron beam |
| WO2013187115A1 (en) * | 2012-06-15 | 2013-12-19 | 株式会社 日立ハイテクノロジーズ | Charged particle beam device |
| CN103733299A (en) * | 2011-09-07 | 2014-04-16 | 株式会社日立高新技术 | Scanning electron microscope |
| JP2016066413A (en) * | 2014-09-22 | 2016-04-28 | 株式会社ホロン | Charged particle beam device for low vacuum |
| CN105765691A (en) * | 2013-09-30 | 2016-07-13 | 卡尔蔡司显微镜股份有限公司 | Charged particle beam system and method of operating the same |
| CN206480588U (en) * | 2017-03-06 | 2017-09-08 | 聚束科技（北京）有限公司 | A kind of scanning focused system |
-
2017
- 2017-03-06 CN CN201710128987.9A patent/CN106920723A/en active Pending
Patent Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0437024A (en) * | 1990-05-31 | 1992-02-07 | Shimadzu Corp | Manufacturing equipment of semiconductor element |
| JP2007250560A (en) * | 1995-10-19 | 2007-09-27 | Hitachi Ltd | Scanning electron microscope |
| US6407387B1 (en) * | 1998-11-30 | 2002-06-18 | Advantest Corp. | Particle beam apparatus |
| CN1404617A (en) * | 2000-01-27 | 2003-03-19 | Ict半导体集成电路测试有限公司 | Objective lens for a charged particle beam device |
| CN1996547A (en) * | 2002-03-21 | 2007-07-11 | 汉民微测科技股份有限公司 | Electron-optical focusing, deflection and signal collection method of rotary deceleration submerged objective lens |
| CN101022075A (en) * | 2006-02-15 | 2007-08-22 | 株式会社日立高新技术 | Scanning electron microscope and apparatus for detecting defect |
| US20070228276A1 (en) * | 2006-03-30 | 2007-10-04 | Hiroshi Makino | Inspection Apparatus and Inspection Method |
| CN101388317A (en) * | 2008-03-21 | 2009-03-18 | 北京威孚物理科技有限公司 | Scanning electronic microscope |
| US20090256076A1 (en) * | 2008-04-14 | 2009-10-15 | Hitachi High-Technologies Corporation | Charged particle beam apparatus permitting high-resolution and high-contrast observation |
| JP4853581B2 (en) * | 2010-08-11 | 2012-01-11 | 株式会社日立製作所 | Inspection method and inspection apparatus using electron beam |
| CN103733299A (en) * | 2011-09-07 | 2014-04-16 | 株式会社日立高新技术 | Scanning electron microscope |
| WO2013187115A1 (en) * | 2012-06-15 | 2013-12-19 | 株式会社 日立ハイテクノロジーズ | Charged particle beam device |
| CN105765691A (en) * | 2013-09-30 | 2016-07-13 | 卡尔蔡司显微镜股份有限公司 | Charged particle beam system and method of operating the same |
| JP2016066413A (en) * | 2014-09-22 | 2016-04-28 | 株式会社ホロン | Charged particle beam device for low vacuum |
| CN206480588U (en) * | 2017-03-06 | 2017-09-08 | 聚束科技（北京）有限公司 | A kind of scanning focused system |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109300759A (en) * | 2017-11-21 | 2019-02-01 | 聚束科技（北京）有限公司 | Low energy scanning electron microscope system, scanning electron microscope system and sample detection method |
| WO2020082861A1 (en) * | 2017-11-21 | 2020-04-30 | Focus-Ebeam Technology (Beijing) Co., Ltd. | Low-energy scanning electron microscope system, scanning electron microscope system, and specimen detection method |
| US10777382B2 (en) | 2017-11-21 | 2020-09-15 | Focus-Ebeam Technology (Beijing) Co., Ltd. | Low voltage scanning electron microscope and method for specimen observation |
| CN111837214A (en) * | 2017-11-21 | 2020-10-27 | 聚束科技（北京）有限公司 | Scanning electron microscope objective lens system and sample detection method |
| US11075056B2 (en) | 2017-11-21 | 2021-07-27 | Focus-Ebeam Technology (Beijing) Co., Ltd. | Scanning electron microscope objective lens system and method for specimen observation |
| JP2021528833A (en) * | 2017-11-21 | 2021-10-21 | フォーカス−イービーム テクノロジー （ベイジン） カンパニー， リミテッド | Low energy scanning electron microscope system, scanning electron microscope system and sample detection method |
| CN108198677A (en) * | 2017-12-29 | 2018-06-22 | 中国科学院电工研究所 | A kind of focusing magnetic field regulator control system for nano particle |
| CN109192642A (en) * | 2018-08-30 | 2019-01-11 | 中国科学院国家空间科学中心 | A kind of pulsar X-ray simulation source radiating coherence |
| CN114256043A (en) * | 2020-12-02 | 2022-03-29 | 聚束科技（北京）有限公司 | Electron beam system |
| CN114256043B (en) * | 2020-12-02 | 2024-04-05 | 聚束科技（北京）有限公司 | An electron beam system |
| US12224153B2 (en) | 2020-12-02 | 2025-02-11 | Focus-Ebeam Technology (Beijing) Co., Ltd. | Electron microscope |
| WO2024083068A1 (en) * | 2023-01-18 | 2024-04-25 | 聚束科技（北京）有限公司 | Objective lens system for scanning electron microscope, and scanning focusing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10453645B2 (en) | Method for inspecting a specimen and charged particle multi-beam device | |
| CN106920723A (en) | A kind of scanning focused system and electron beam control method | |
| CN108231511A (en) | A kind of objective lens of the scanning electron microscope, system and sample detection method | |
| US8785879B1 (en) | Electron beam wafer inspection system and method of operation thereof | |
| JP4920385B2 (en) | Charged particle beam apparatus, scanning electron microscope, and sample observation method | |
| TWI415160B (en) | An electron beam appartus | |
| JP2014220241A5 (en) | ||
| CN1630926A (en) | Electron optical focusing, deflection and signal collection system and method of rotary deceleration submerged objective lens | |
| US8759761B2 (en) | Charged corpuscular particle beam irradiating method, and charged corpuscular particle beam apparatus | |
| US10636615B2 (en) | Composite beam apparatus | |
| CN208256614U (en) | A kind of objective lens of the scanning electron microscope, system | |
| CN116190184A (en) | Scanning electron microscope objective lens system and scanning focusing method | |
| CN1672233A (en) | Charged particle beam column and method for directing a charged particle beam | |
| JP6312387B2 (en) | Particle beam device and method of operating particle beam device | |
| CN113035675A (en) | Charged particle beam apparatus | |
| CN206480588U (en) | A kind of scanning focused system | |
| JP5478683B2 (en) | Charged particle beam irradiation method and charged particle beam apparatus | |
| KR100711198B1 (en) | Scanning electron microscope | |
| JP4548537B2 (en) | Inspection method and inspection apparatus using electron beam | |
| JP4702472B2 (en) | Inspection method and inspection apparatus using electron beam | |
| JP4576272B2 (en) | electronic microscope | |
| JP2000011939A (en) | Charged particle beam device and semiconductor device inspection method | |
| JP2000182557A (en) | Charged particle beam equipment | |
| JP2009205936A (en) | Scanning electron microscope | |
| JP2004319519A (en) | Inspection method and inspection apparatus using electron beam |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170704 |
|
| RJ01 | Rejection of invention patent application after publication |