CN106917122A - Wafer electroplating device and electroplating method - Google Patents
Wafer electroplating device and electroplating method Download PDFInfo
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- CN106917122A CN106917122A CN201710208316.3A CN201710208316A CN106917122A CN 106917122 A CN106917122 A CN 106917122A CN 201710208316 A CN201710208316 A CN 201710208316A CN 106917122 A CN106917122 A CN 106917122A
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- Prior art keywords
- anode
- wafer
- electroplating
- electro
- upward bending
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/10—Electrodes, e.g. composition, counter electrode
- C25D17/12—Shape or form
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Automation & Control Theory (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
The invention discloses a wafer electroplating device, which comprises an electroplating container, a wafer, an anode and an electroplating power supply, wherein the electroplating container is filled with electroplating liquid; immersing the wafer and the anode in the electroplating solution; the wafer is electrically connected with the anode through the electroplating power supply, so that an electroplating electric field is formed between the wafer and the anode; wherein the anode is made of insoluble metal with a convex bending surface, and the soluble anode metal is filled in the anode. According to the invention, the anode with the convex bending surface is arranged, so that the outer side transmission resistance between the edge area of the surface of the wafer and the anode is larger than the inner side transmission resistance between the central area of the surface of the wafer and the anode, and the wafer is driven to rotate by the rotating motor, so that the uniform distribution of the electric field on the electroplating surface of the wafer is realized, the characteristics of simple operation, good uniformity, high electroplating efficiency and the like are realized, and the film coating speed and the film coating thickness of different points on the surface of the wafer in the electroplating process are effectively ensured to have consistency.
Description
Technical field
The present invention relates to semiconductor chip manufacturing technology field, more particularly to a kind of Wafer electroplating device and electro-plating method.
Background technology
Need to make various gold on the wafer surface in the production process of semiconductor integrated circuit and other semiconductor devices
Category layer, so as to reach the effect such as electrical interconnection.Plating is one of the critical process for making these metal levels, and wafer plating is by crystalline substance
Circle is placed in electroplate liquid, and voltage negative pole is applied into the good thin metal layer of pre-production on wafer（Seed Layer）, by positive polarity
Be applied to can dissolve or insoluble anode on, by electric field action so that metal ion deposition in plating solution is to wafer table
Face.
With the development of semiconductor technology, the Seed Layer of more and more thinner is applied to electroplating technology.However, thin Seed Layer
Problem is produced using the uniformity of electroplated metal layer on the seed layer can be caused.In order to improve the utilization rate of wafer, electroplating clamp
Electricity-linkingup point generally all only contacted with the Seed Layer of the outermost edge of wafer, the Seed Layer of crystal circle center and the seed of crystal round fringes
There is voltage difference in layer, and Seed Layer is thinner, and pressure difference is bigger.This may result in the rate of deposition in crystal circle center region much smaller than crystalline substance
The rate of deposition in rounded edge region so that the coating film thickness in crystal round fringes region is more than the coating film thickness in crystal circle center region, from
And influence the uniformity of technique.
Further, with the carrying out of electroplating process, seed layer thickness is increased, so as to cause crystal circle center and wafer side
Resistance between edge is continually changing so that the difference of rate of deposition is dynamic change, and the thus solution to problem increased
Bigger difficulty.
The content of the invention
The purpose of the present invention is to propose to a kind of Wafer electroplating device, crystalline substance is caused by setting the anode with upward bending face
Outside transmission resistance between circular surfaces fringe region and anode is passed more than the inner side between crystal column surface central area and anode
Transmission of electricity resistance, and then solve the problems, such as crystal column surface Electric Field Distribution uneven and influence electroplating evenness.
To reach above-mentioned purpose, the present invention proposes a kind of Wafer electroplating device, including the plating appearance for being loaded with electroplate liquid
Device, wafer, anode and electroplating power supply；The wafer is immersed in the electroplate liquid with the anode；The wafer is by described
Electroplating power supply is electrically connected with the anode so that plating electric field is formed between the wafer and the anode；Wherein, the anode
It is made of the insoluble petal with upward bending face, inside filling soluble anode metal.
Preferably, the anode has elasticity.
Preferably, the Wafer electroplating device further includes external drive component, the external drive component with it is described
The upward bending face of anode is connected, the protrusion degree for changing the upward bending face.
Preferably, the external drive component is motor or cylinder.
In addition, the present invention also provides a kind of electro-plating method of above-mentioned Wafer electroplating device, the electro-plating method includes：
S001:The insoluble petal with upward bending face is taken as anode；
S002：Electroplate liquid is contained in electroplating container, wafer and anode are immersed in electroplate liquid, and are connected respectively with electroplating power supply
Connect wafer and anode so that plating electric field is formed between wafer and anode；Wherein, electroplating power supply and the contact point of wafer are wafer
Fringe region；
S003：Start electric rotating machine and drive wafer rotation.
Preferably, the inside filling soluble anode metal of the anode.
Preferably, the anode has elasticity.
Preferably, in step S001, the electro-plating method is further included：The upward bending face of anode is driven with outside
Dynamic element is connected, to change the protrusion degree in the upward bending face.
Preferably, the external drive component is motor or cylinder.
Preferably, between the step S002 and the step S003, the electro-plating method is further included：
The upward bending face of anode is pulled by external drive component, so as to change the protrusion in the upward bending face of anode
Degree.
The beneficial effects of the invention are as follows：The situation of prior art is different from, Wafer electroplating device of the invention is by setting
Anode with upward bending face causes that the outside between crystal column surface fringe region and anode is transmitted resistance and is more than crystal column surface
Transmitted inwards resistance between central area and anode, and drive wafer to rotate by electric rotating machine, it is achieved thereby that wafer is electric
Being uniformly distributed for plating surface field, solves the problems, such as crystal column surface Electric Field Distribution inequality and causes electroplated metallization uniformity.Separately
Outward, the present invention changes the protrusion degree in the upward bending face of anode by external drive component, and then adjusts crystal column surface marginal zone
Resistance and crystal column surface central area to the difference of the transmitted inwards resistance between anode are transmitted in domain to the outside between anode, i.e.,
Crystal column surface seed layer resistance is continually changing in electroplating process, can also realize that the dynamic of crystal column surface electric field is uniformly distributed,
With simple to operate, uniformity it is good, electroplating efficiency is high the features such as, be effectively guaranteed crystal column surface difference in electroplating process
Coating speed and coating film thickness have uniformity.
Brief description of the drawings
Fig. 1 is the structural representation of Wafer electroplating device in the prior art；
Fig. 2 is the electronic schematic diagram of Wafer electroplating device in the prior art；
Fig. 3 is the structural representation of the embodiment of Wafer electroplating device of the present invention；And
Fig. 4 is the schematic flow sheet of electro-plating method of the invention.
Specific embodiment
It is the principle schematic diagram. of the Wafer electroplating device of prior art to refer to Fig. 1 and Fig. 2, Fig. 1, and electroplate liquid 1 is contained
In electroplating container 3, wafer 2 and anode 5 are immersed in electroplate liquid 1, and electroplating power supply 6 is connected as the wafer 2 of negative electrode respectively
With anode 5.In order to improve the utilization rate of wafer 2, the connecing as cathode current typically using the fringe region of wafer 2 in the prior art
Contact, electronic schematic diagram in whole circuit as shown in Fig. 2 due to there is resistance as the Seed Layer of conductive layer, therefore
There is resistance Ra between the fringe region of wafer 2 and the central area of wafer 2, between the fringe region A points and anode 5 of wafer 2
There is resistance Rb, another point B points of fringe region and the anode 5 of wafer 2 have resistance Rd, central area C and the anode 5 of wafer 2
Between there is resistance Rc.If wafer 2 is parallel with anode 5, resistance Rb, resistance Rd, resistance Rc are identicals in theory, but by
The difference of error and each point flow velocity of electroplate liquid 1, concentration in practical structures etc., three is differentiated.Due to seed on wafer 2
Resistance Ra points of layer has removed a part of voltage, therefore whole electric field 4 near the local than in close wafer 2 of the fringe region of wafer 2
Heart district domain it is local intensive.Therefore, the uneven distribution of electric field 4 causes the surface of wafer 2 near the place of fringe region than being close to
The local electroplating deposition speed of central area is fast, so as to have a strong impact on the uniformity of electroplating technology.
As shown in figure 3, the present invention provides a kind of Wafer electroplating device, including the electroplating container for being loaded with electroplate liquid 101
103rd, wafer 102, anode 105, electroplating power supply 106 and external drive component 107；Wafer 102 is immersed in electroplate liquid with anode 105
In 103；Wafer 102 is electrically connected by electroplating power supply 106 with anode 105 so that plating is formed between wafer 102 and anode 105
Electric field 104；Wherein, anode 105 is made of the insoluble petal with upward bending face, inside filling soluble anode gold
Category.Anode 105 has elasticity.External drive component 107 is connected with the upward bending face of anode 105, for changing upward bending
The protrusion degree in face.
In the present invention, external drive component 107 is motor or cylinder.
In addition, as shown in Figures 3 and 4, the present invention also provides a kind of electro-plating method of above-mentioned Wafer electroplating device, including：
S001:The insoluble petal with upward bending face is taken as anode 105, and by the upward bending face of anode 105 with it is outer
Portion's driving element 107 is connected, to change the protrusion degree in upward bending face；Wherein, anode 105 has elasticity, and inside filling can
Dissolubility anode metal；External drive component 107 is motor or cylinder；
S002：Electroplate liquid 101 is contained in electroplating container 103, wafer 102 and anode 105 are immersed in electroplate liquid 101, and
Wafer 102 and anode 105 are connected respectively with electroplating power supply 106 so that plating electric field is formed between wafer 102 and anode 105
104；Wherein, electroplating power supply 106 and the contact point of wafer 102 are the fringe region of wafer 102；
S003：The upward bending face of anode 105 is pulled by external drive component 107, so as to change the upper of anode 105
The protrusion degree of male bend curved surface；
S004：Starting electric rotating machine M drives wafer 102 to rotate.
In the present invention, because anode 105 has upward bending face, each point on the surface edge zone of wafer 102 to sun
The distance of pole is more than each point on the centre of surface region of wafer 102 to the distance of anode, so that the marginal surface area of wafer 102
Domain is more than the centre of surface region of wafer 102 to the transmitted inwards resistance between anode 105 to the outside transmission resistance of anode 105；
Electric rotating machine M drives wafer 102 to rotate, it is ensured that the outside transmission electricity of the difference of the fringe region of wafer 102 to anode 105
Resistance is increased relative to the centre of surface region of wafer 102 to the transmitted inwards resistance between anode 105, and this is just weakened
Electroplate the intensity of the fringe region of electric field 104 and cause that the distribution of whole plating electric field 104 produces even results.In order to reach more preferably
Effect, in step S004, the protrusion degree in anode 105 upward bending face is changed by external drive component 107, so as to change
The difference between resistance and transmitted inwards resistance is transmitted in outside, and right with the change of seed layer resistance in the electroplating process of wafer 102
Should.For example, with the carrying out of wafer plating, the seed layer resistance of wafer 102 is constantly diminished, can be changed by external drive component 107
Become the protrusion degree in the upward bending face of anode 105 so that the surface edge zone each point of wafer 102 is outer to what is existed between anode 105
Side is transmitted resistance and the centre of surface region each point of wafer 102 and is increased to the difference of the transmitted inwards resistance existed between anode 105,
To adapt to the situation of change of the seed layer resistance of wafer 102, so as to the dynamic that ensure that the surface field of wafer 102 is uniformly distributed.
Wafer electroplating device of the invention causes crystal column surface fringe region by setting the anode with upward bending face
Outside transmission resistance between anode is more than the transmitted inwards resistance between crystal column surface central area and anode, and by rotation
Rotating motor drives wafer rotation, it is achieved thereby that being uniformly distributed for wafer plate surface electric field, solves crystal column surface electric field point
Cloth is uneven and cause the problem of electroplated metallization uniformity.In addition, the present invention changes the upper male bend of anode by external drive component
The protrusion degree of curved surface, and then adjust crystal column surface fringe region to the outside transmission resistance between anode and crystal column surface center
Domain to the transmitted inwards resistance between anode difference, even if crystal column surface seed layer resistance is continually changing in electroplating process,
Also can realize that the dynamic of crystal column surface electric field is uniformly distributed, with simple to operate, uniformity it is good, electroplating efficiency is high the features such as, have
Ensure that the coating speed and coating film thickness of crystal column surface difference in electroplating process have uniformity to effect.
Here description of the invention and application are illustrative, are not wishing to limit the scope of the invention to above-described embodiment
In.The deformation and change of embodiments disclosed herein are possible, real for those skilled in the art
The replacement and equivalent various parts for applying example are known.It should be appreciated by the person skilled in the art that not departing from the present invention
Spirit or essential characteristics in the case of, the present invention can in other forms, structure, arrangement, ratio, and with other components,
Material and part are realized.In the case where scope and spirit of the present invention are not departed from, embodiments disclosed herein can be entered
Other deformations of row and change.
Claims (10)
1. a kind of Wafer electroplating device, it is characterised in that electroplating container, wafer, anode and plating including being loaded with electroplate liquid
Power supply；The wafer is immersed in the electroplate liquid with the anode；The wafer passes through the electroplating power supply and the anode
Electrical connection so that plating electric field is formed between the wafer and the anode；Wherein, the anode is using with upward bending face
Insoluble petal be made, inside filling soluble anode metal.
2. Wafer electroplating device according to claim 1, it is characterised in that the anode has elasticity.
3. Wafer electroplating device according to claim 2, it is characterised in that the Wafer electroplating device further includes outer
Portion's driving element, the external drive component is connected with the upward bending face of the anode, for changing the upward bending face
Protrusion degree.
4. Wafer electroplating device according to claim 3, it is characterised in that the external drive component is motor or gas
Cylinder.
5. the electro-plating method of Wafer electroplating device of the one kind according to claim 1 ~ 4, it is characterised in that the electro-plating method
Including：
S001:The insoluble petal with upward bending face is taken as anode；
S002：Electroplate liquid is contained in electroplating container, wafer and anode are immersed in electroplate liquid, and are connected respectively with electroplating power supply
Connect wafer and anode so that plating electric field is formed between wafer and anode；Wherein, electroplating power supply and the contact point of wafer are wafer
Fringe region；
S003：Start electric rotating machine and drive wafer rotation.
6. electro-plating method according to claim 5, it is characterised in that the inside filling soluble anode gold of the anode
Category.
7. electro-plating method according to claim 5, it is characterised in that the anode has elasticity.
8. electro-plating method according to claim 7, it is characterised in that in step S001, the electro-plating method is further
Including：The upward bending face of anode is connected with external drive component, to change the protrusion degree in the upward bending face.
9. electro-plating method according to claim 8, it is characterised in that the external drive component is motor or cylinder.
10. electro-plating method according to claim 8, it is characterised in that the step S002 and step S003 it
Between, the electro-plating method is further included：
The upward bending face of anode is pulled by external drive component, so as to change the protrusion in the upward bending face of anode
Degree.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710208316.3A CN106917122A (en) | 2017-03-31 | 2017-03-31 | Wafer electroplating device and electroplating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710208316.3A CN106917122A (en) | 2017-03-31 | 2017-03-31 | Wafer electroplating device and electroplating method |
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| Publication Number | Publication Date |
|---|---|
| CN106917122A true CN106917122A (en) | 2017-07-04 |
Family
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Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5443707A (en) * | 1992-07-10 | 1995-08-22 | Nec Corporation | Apparatus for electroplating the main surface of a substrate |
| US6113759A (en) * | 1998-12-18 | 2000-09-05 | International Business Machines Corporation | Anode design for semiconductor deposition having novel electrical contact assembly |
| US6251251B1 (en) * | 1998-11-16 | 2001-06-26 | International Business Machines Corporation | Anode design for semiconductor deposition |
| US20030221958A1 (en) * | 2002-05-30 | 2003-12-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Convex profile anode for electroplating system |
| TW581321U (en) * | 2002-05-01 | 2004-03-21 | Taiwan Semiconductor Mfg | Convex anode for extending the lifetime of anode in chemical electroplating procedure |
| JP2006249450A (en) * | 2005-03-08 | 2006-09-21 | Nisshin Kasei Kk | Plating method and plating device |
| CN101114590A (en) * | 2006-07-27 | 2008-01-30 | 恩益禧电子股份有限公司 | Method for manufacturing semiconductor device and electroplating apparatus |
| CN101192509A (en) * | 2006-11-27 | 2008-06-04 | 台湾积体电路制造股份有限公司 | Apparatus, anode, and method of manufacturing an integrated circuit |
| CN101275268A (en) * | 2007-03-29 | 2008-10-01 | 丰田合成株式会社 | Method for fabricating plated product |
| US20110155578A1 (en) * | 2005-04-22 | 2011-06-30 | Renesas Electronics Corporation | Plating process and manufacturing process for semiconductor device thereby |
| KR101681083B1 (en) * | 2016-06-26 | 2016-12-01 | 주식회사 지에스아이 | Plating device having curved mesh |
-
2017
- 2017-03-31 CN CN201710208316.3A patent/CN106917122A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5443707A (en) * | 1992-07-10 | 1995-08-22 | Nec Corporation | Apparatus for electroplating the main surface of a substrate |
| US6251251B1 (en) * | 1998-11-16 | 2001-06-26 | International Business Machines Corporation | Anode design for semiconductor deposition |
| US6113759A (en) * | 1998-12-18 | 2000-09-05 | International Business Machines Corporation | Anode design for semiconductor deposition having novel electrical contact assembly |
| TW581321U (en) * | 2002-05-01 | 2004-03-21 | Taiwan Semiconductor Mfg | Convex anode for extending the lifetime of anode in chemical electroplating procedure |
| US20030221958A1 (en) * | 2002-05-30 | 2003-12-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Convex profile anode for electroplating system |
| JP2006249450A (en) * | 2005-03-08 | 2006-09-21 | Nisshin Kasei Kk | Plating method and plating device |
| US20110155578A1 (en) * | 2005-04-22 | 2011-06-30 | Renesas Electronics Corporation | Plating process and manufacturing process for semiconductor device thereby |
| CN101114590A (en) * | 2006-07-27 | 2008-01-30 | 恩益禧电子股份有限公司 | Method for manufacturing semiconductor device and electroplating apparatus |
| CN101192509A (en) * | 2006-11-27 | 2008-06-04 | 台湾积体电路制造股份有限公司 | Apparatus, anode, and method of manufacturing an integrated circuit |
| CN101275268A (en) * | 2007-03-29 | 2008-10-01 | 丰田合成株式会社 | Method for fabricating plated product |
| KR101681083B1 (en) * | 2016-06-26 | 2016-12-01 | 주식회사 지에스아이 | Plating device having curved mesh |
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Application publication date: 20170704 |