CN106847676A - The patterning method and forming method of semiconductor devices - Google Patents
The patterning method and forming method of semiconductor devices Download PDFInfo
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- CN106847676A CN106847676A CN201510881916.7A CN201510881916A CN106847676A CN 106847676 A CN106847676 A CN 106847676A CN 201510881916 A CN201510881916 A CN 201510881916A CN 106847676 A CN106847676 A CN 106847676A
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- 238000000034 method Methods 0.000 title claims abstract description 76
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 238000000059 patterning Methods 0.000 title claims abstract description 29
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- 239000000463 material Substances 0.000 claims abstract description 64
- 238000011161 development Methods 0.000 claims abstract description 38
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- 230000000694 effects Effects 0.000 claims description 16
- 239000002253 acid Substances 0.000 claims description 9
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 8
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 5
- 229920005989 resin Polymers 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
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- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims 1
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000001788 irregular Effects 0.000 description 4
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- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
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- GHUXAYLZEGLXDA-UHFFFAOYSA-N 8-azido-5-ethyl-6-phenylphenanthridin-5-ium-3-amine;bromide Chemical compound [Br-].C12=CC(N=[N+]=[N-])=CC=C2C2=CC=C(N)C=C2[N+](CC)=C1C1=CC=CC=C1 GHUXAYLZEGLXDA-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
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- VHUGWUBIUBBUAF-UHFFFAOYSA-N cyclotridecanone Chemical compound O=C1CCCCCCCCCCCC1 VHUGWUBIUBBUAF-UHFFFAOYSA-N 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
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- 229910052739 hydrogen Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The patterning method and forming method of a kind of semiconductor devices, wherein patterning method include：Material layer to be etched is provided；Positive photoresist layer is formed in material layer to be etched；First exposure is carried out to positive photoresist layer using mask plate, the first exposure region is formed in positive photoresist layer；Positivity development is carried out to positive photoresist layer, the positive photoresist layer of the first exposure region is removed；After positivity development, second exposure is carried out to positive photoresist layer using the mask plate, the second exposure region is formed in positive photoresist layer, second exposure is identical with respect to the position of positive photoresist layer with mask plate in the first exposure, the exposure energy corresponding exposure size of the corresponding exposure size of exposure energy more than the first exposure of the second exposure；Negativity development is carried out to positive photoresist layer, the positive photoresist layer outside the second exposure region of removal forms the target photoresist layer with circular pattern.The patterning method simplifies the Patternized technique of semiconductor devices and reduces cost.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly to a kind of semiconductor devices patterning method and
Forming method.
Background technology
In the technique of semiconductor devices manufacture, the figure on mask plate is passed through using photoetching process generally
Exposure is transferred on substrate.Photoetching process includes：Substrate is provided；Photoresist is formed on a semiconductor substrate；
The photoresist is exposed and developed, the photoresist of patterning is formed；It is with the photoresist for patterning
Mask is performed etching to substrate so that the pattern on photoresist is transferred in substrate；Removal photoresist.With
The continuous diminution of dimensions of semiconductor devices, photoetching critical size moves closer to the thing even beyond photoetching
The reason limit, thus proposes more acute challenge to photoetching technique.The basic thought of dual recompose-technique
It is that final target pattern is formed by composition twice, to overcome the inaccessiable photolithography limitation of single composition.
In the patterning process of cyclic structure, single exposure composition needs to form the mask plate patterns of ring-type,
And by the figure on the mask plate of ring-type by the photoresist layer that is transferred in material layer to be etched of exposure in,
Prepared by the mask plate patterns of wherein two-dimentional ring-type and the process window of exposure transfer is all very narrow, is unfavorable for technique
Control and maintenance.Therefore propose the patterned dual recompose-technique to cyclic structure.The dual composition
Technology includes two methods, and the first is litho (photoetching)-etch (etching)-litho (photoetching)-etch
(etching) (LELE), be for second self-aligned double patterning shape (self-aligned double patterning,
SADP).Cyclic structure it is graphical in, if by LELE techniques, i.e., exposed by first time
The first exposure region is defined, then forms logical in the hard mask layer under photoresist layer after first time etches
Hole, then defines the second exposure region, the face of second exposure region by being exposed on same position for the second time
Product forms cyclic structure by second etching in hard mask layer afterwards more than the area of the first exposure region,
The method is related to first time to expose the overlay difference for forming figure with second exposure and causes the non-of cyclic structure
Concentric problem, and double exposure and twice etching increased the difficulty of processing step and control.
The graphical general use autoregistration graphic method of cyclic structure is formed in the prior art, including：
Sacrificial material layer is formed in material layer to be etched；Sacrificial material layer is patterned by photoetching process,
Pattern is made it have, sacrifice layer is formed；Side-wall material layer in gap is deposited on sacrifice layer；Etching clearance side
The wall material bed of material, at least exposes the top surface of sacrifice layer, so as to the side wall in sacrifice layer forms clearance side wall；
Removal sacrifice layer, retention gap side wall；Using clearance side wall as mask, treat etachable material layer and carved
Erosion, makes it have pattern.The method can ensure the concentric problem of cyclic structure, and can effectively ensure
The dimensional homogeneity of cyclic structure, but complex process and relatively costly.
The content of the invention
The problem that the present invention is solved is to provide the patterning method and forming method of a kind of semiconductor devices, with
Simplified flowsheet and reduces cost.
To solve the above problems, the present invention provides a kind of patterning method of semiconductor devices, including：Carry
For material layer to be etched；Positive photoresist layer is formed in the material layer to be etched；Using mask plate pair
The positive photoresist layer carries out the first exposure, and the first exposure region is formed in the positive photoresist layer；
Positivity development is carried out to the positive photoresist layer, the positive photoresist layer of first exposure region is removed；
After carrying out positivity development, the second exposure is carried out to the positive photoresist layer using the mask plate, in institute
State and formed in positive photoresist layer the second exposure region, mask plate is relative to positive-tone photo described in the second exposure
The position of glue-line is identical relative to the position of positive photoresist layer with mask plate described in the first exposure, and
Corresponding exposure size is more than under the exposure energy effect of the first exposure under the exposure energy effect of the second exposure
Corresponding exposure size；Negativity development is carried out to the positive photoresist layer, second exposure region is removed
Positive photoresist layer in addition, forms the target photoresist layer with circular pattern.
Optionally, the figure of the mask plate is pass pattern.
Optionally, there is light acid producing agent and resin in the positive photoresist layer.
Optionally, the developer that the positivity development is used is tetramethyl ammonium hydroxide solution or tetraethyl hydrogen
Ammonium hydroxide solution.
Optionally, the developer that the negativity development is used is n-butanol, positive fourth of the twelve Earthly Branches alcohol, hexamethylene, hexamethylene
Ketone, methyl methacrylate or EMA.
Optionally, after being exposed first and before positivity development, also the positive photoresist layer is carried out
First baking；After being exposed second and before negativity development, the is also carried out to the positive photoresist layer
Two bakings.
Optionally, following technique was also included before the positive photoresist layer is formed：Described to be etched
Hard mask layer is formed in material layer；After the target photoresist layer is formed, with the target photoresist layer
For mask is performed etching to the hard mask layer, ring-type hard mask layer is formed.
The present invention also provides a kind of forming method of semiconductor devices, and the ring-type formed using the above method is hard
Mask layer is treated etachable material layer and is performed etching for mask, forms ring target layer.
The present invention also provides a kind of forming method of semiconductor devices, the target light formed using the above method
Photoresist layer is treated etachable material layer and is performed etching for mask, forms ring target layer.
Compared with prior art, technical scheme has advantages below：
The present invention is exposed on by carrying out to positive photoresist layer first and forms first in positive photoresist layer and expose
Light area, then carries out positivity development to the positive photoresist layer, by the positive photoresist of the first exposure region
Layer removal, is exposed on by second the second exposure region is formed in positive photoresist layer afterwards, due to the first exposure
Light and the second exposure are using mask plate described in identical mask plate and the second exposure relative to positive photoresist
The position of layer is identical relative to the position of positive photoresist layer with mask plate described in the first exposure so that the
One exposure region and the second exposure region are concentric, and due to corresponding exposure under the exposure energy effect of the second exposure
Size is more than corresponding exposure size under the exposure energy effect of the first exposure so that the second exposure of formation
The area in area covers the first exposure region more than the area and the second exposure region of the first exposure region, carries out afterwards
Negativity is developed, by the positive photoresist layer removal outside the second exposure region, so as to remain the first exposure region
And the second positive photoresist layer between exposure region, the target photoresist layer with circular pattern is ultimately formed,
The present invention use only double exposure and development twice is formed the target photoresist with circular pattern
Layer, and etching technics and depositing operation need not be used, it is middle compared to existing technology to form to be etched as etching
Needed during the ring-type mask pattern of material layer using exposure technology, developing process, etching technics and
The situation of depositing operation, reduces the complexity of technique, and reduces process costs.
Brief description of the drawings
Fig. 1 to Fig. 6 is the structural representation of the patterning process of semiconductor devices in the prior art；
Fig. 7 is the structural representation of the semiconductor devices that prior art is formed；
Fig. 8 to Figure 15 is the structural representation of the patterning process of semiconductor devices in one embodiment of the invention
Figure；
Figure 16 be semiconductor devices forming process in the present invention structural representation；
Figure 17 is the structural representation of the semiconductor devices that the present invention is formed.
Specific embodiment
As described in background, the Patternized technique of the semiconductor devices for being formed in the prior art is complicated,
And high cost.
Fig. 1 to Fig. 6 is the structural representation of the patterning process of semiconductor devices in the prior art.
With reference to Fig. 1, there is provided material layer to be etched 100, formed in the material layer to be etched 100 and sacrificed
Material layer 110；The photoresist layer 120 of patterning is formed in the sacrificial material layer 110.The pattern
Pattern in the photoresist layer 120 of change is discrete through hole, and the destination layer being subsequently formed has the figure of annular
Case.
It is mask to the sacrifice with the photoresist layer 120 (referring to Fig. 1) of the patterning with reference to Fig. 2
Material layer 110 (referring to Fig. 1) is performed etching and makes it have pattern, forms sacrifice layer 111；Formed and sacrificed
Photoresist layer 120 is removed after layer 111.
With reference to Fig. 3, Fig. 3 is the schematic diagram formed on the basis of Fig. 2, forms gap side-wall material layer 130,
The covering material layer 100 to be etched of the gap side-wall material layer 130 and sacrifice layer 111.
With reference to Fig. 4, using anisotropy dry carving technology etching gap side-wall material 130 (referring to Fig. 3) of layer,
At least expose the top surface of sacrifice layer 111, so as to the side wall in sacrifice layer 111 forms clearance side wall 131.
With reference to Fig. 5, removal sacrifice layer 111 (referring to Fig. 4), retention gap side wall 131.Clearance side wall 131
Be shaped as annular.
With reference to Fig. 6, using clearance side wall 131 as mask, treat etachable material layer 100 and perform etching, shape
Circlewise destination layer 101.Fig. 7 is the schematic perspective view of the ring target to be formed layer 101.
Research discovery, the original of the complex process of the patterning of semiconductor devices, and high cost in the prior art
Because being：
Need to be exposed technique and developing process when the photoresist layer 120 of patterning is formed, formed sacrificial
Need to perform etching technique during domestic animal layer 111, need to carry out deposition work when forming gap side-wall material layer 130
Skill, needs to perform etching technique during removal sacrifice layer 111, ultimately forms clearance side wall 131 as etching
The ring-type mask pattern of material layer to be etched 100, it is seen that ultimately forming clearance side wall 131 needs through overexposure
Light technique, developing process, etching technics and depositing operation, cause complex process, and process costs are high.
On this basis, the present invention provides a kind of patterning method of semiconductor devices, in corrosion material to be etched
Positive photoresist layer is formed on layer, the first exposure region is formed by the first exposure, then to the positivity light
Photoresist layer has carried out positivity development, the positive photoresist layer of the first exposure region is removed, then by second
Exposure formed the second exposure region, second exposure described in mask plate relative to positive photoresist layer position and
Mask plate is identical relative to the position of positive photoresist layer described in first exposure, and in the exposure of the second exposure
Corresponding exposure size is more than corresponding exposure guide rule under the exposure energy effect of the first exposure under light energy effect
It is very little, negativity development has been carried out afterwards, by the positive photoresist layer removal outside the second exposure region, most end form
Into the target photoresist layer with circular pattern as the mask for etching material layer to be etched, technique is reduced
Complexity, and reduce process costs.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings
Specific embodiment of the invention is described in detail.
Fig. 8 to Figure 15 is the structural representation of the patterning process of semiconductor devices in one embodiment of the invention
Figure.
With reference to Fig. 8, there is provided material layer to be etched 200.
The material layer to be etched 200 is the follow-up material layer for needing and etching.The material layer to be etched 200
It can be single or multiple lift stacked structure.The material of the material layer to be etched 200 can be semiconductor material
Material, such as silicon, germanium or SiGe, no longer illustrate one by one here.In the present embodiment, the corrosion material to be etched
Layer 200 is silicon.
Hard mask can also be formed between material layer to be etched 200 and the positive photoresist layer being subsequently formed
Layer 210 and the bottom anti-reflection layer 220 on hard mask layer 210.
The material of the hard mask layer 210 can be the abilities such as silicon nitride, silicon oxynitride, TEOS or metal
The hard mask layer in domain often uses material, and the method for forming the hard mask layer 210 is depositing operation, such as chemistry
Gas-phase deposition or physical gas-phase deposition.The hard mask layer 210 is nonessential layer.
The bottom anti-reflection layer 220 is used for the intensity of the bottom illumination for improving post-exposure process.It is described
The material of bottom anti-reflection layer 220 is BARC material of the prior art, or organic antireflecting
Coating, such as light absorbing material or polymeric material, or inorganic anti-reflective coating, such as titanium, oxidation
Titanium, titanium nitride, chromium oxide, carbon, amorphous silicon, silicon nitride, silicon oxynitride or silicon oxide carbide.It is described
Bottom anti-reflection layer 220 is nonessential layer.
With continued reference to Fig. 8, positive photoresist layer 230 is formed in the material layer to be etched 200.
In the present embodiment, the positive photoresist layer 230 also covers bottom anti-reflection layer 220 and hard mask
Layer 210.
There is light acid producing agent and resin in the positive photoresist layer 230.
The material of the positive photoresist layer 230 is the material of positive photoresist layer in the prior art.
With reference to Fig. 9, the first exposure is carried out to the positive photoresist layer 230 using mask plate, it is described just
The first exposure region (I regions) is formed in property photoresist layer 230.
The figure of the mask plate be pass pattern, the cross section of the pass pattern be shaped as can be
Rectangle or circular or irregular shape, in the present embodiment, the shape of cross section of the pass pattern is circle.
Specifically, the exposure light source irradiation mask plate of the first exposure, enters to the positive photoresist layer 230
Row first exposes.
The exposure energy of the first exposure carried out to the positive photoresist layer 230 has threshold value E0, first
The central energy value E1 of the light source of exposure is more than threshold value, by more than or equal to threshold in the exposure energy of the first exposure
The property of the positive photoresist layer 230 of the exposure energy irradiation of value E0 changes, the positive photoresist
Light acid producing agent in layer 230 produces light acid, the light under more than or equal to the effect of threshold value E0 exposure energies
Resin in acid and positive photoresist layer 230 reacts so that first exposes in positive photoresist layer 230
Light area has hydrophily, does not have hydrophobicity by the region of the first exposure irradiation, subsequently when positivity is developed
First exposure region is removed.
Curve 1 is the energy distribution curve figure of the first exposure, and the is carried out to the positive photoresist layer 230
The corresponding exposure size of energy distribution curve of one exposure is H1.
With reference to Figure 10, positivity development is carried out to the positive photoresist layer 230, remove first exposure
The positive photoresist layer 230 in area.
The positivity development is developed using positivity developer to the positive photoresist layer 230, in institute
State in positivity development, the positivity developer dissolves the positive photoresist layer 230 of the first exposure region, institute
The material for stating positivity developer is alkaline solution, such as TMAH (TMAH) solution or tetrem
Base Ammonia.
After positivity development, the first baking can also be carried out, be remained in just after the positivity is developed
Moisture removal on property photoresist layer 230.The temperature of first baking is 80 degrees Celsius~120 degrees Celsius,
So that positive photoresist layer 230 is unlikely to deformation, and will can be remained in just after positivity development faster
Moisture removal on property photoresist layer 230.
After carrying out the positivity development, multiple discrete through holes, institute are formed in positive photoresist layer 230
The shape of cross section for stating through hole can be rectangle or circular or irregular shape, in the present embodiment, the through hole
Shape of cross section for circle.
With reference to Figure 11, after carrying out positivity development, using the mask plate to the positive photoresist layer 230
The second exposure is carried out, the second exposure region (II region), second are formed in the positive photoresist layer 230
Mask plate described in exposure is relative relative to mask plate described in the position of positive photoresist layer and the first exposure
It is identical in the position of positive photoresist layer, and the corresponding exposure guide rule under the exposure energy effect of the second exposure
It is very little to be more than corresponding exposure size under the effect of the exposure energy of the first exposure.
Specifically, the exposure light source of the second exposure irradiates the mask plate, to the positive photoresist layer 230
Carry out the second exposure.
The exposure energy of the second exposure carried out to the positive photoresist layer 230 has threshold value E0, second
The central energy value E2 of the light source of exposure is more than threshold value, by more than or equal to threshold in the exposure energy of the second exposure
The property of the positive photoresist layer 230 of the exposure energy irradiation of value E0 changes, the positive photoresist
Light acid producing agent in layer 230 produces light acid, the light under more than or equal to the effect of threshold value E0 exposure energies
Resin in acid and positive photoresist layer 230 reacts, and forms the second exposure region, the second exposure region tool
There is hydrophily, hydrophobicity is not had by the positive photoresist layer 230 of the second exposure irradiation, subsequently in negativity
The positive photoresist layer 230 beyond the second exposure region is removed during development.
Curve 2 is the energy distribution curve figure of the second exposure, and the is carried out to the positive photoresist layer 230
The corresponding exposure size of energy distribution curve of two exposures is H2, and the exposure size H2 of the second exposure is more than
The exposure size H1 of the first exposure.
In the present embodiment, exposed using the energy of the exposure of identical light source generator generation first and second
Energy, difference is that the central energy value E2 of light source is more than in light source in the first exposure in the second exposure
Heart energy value E1.In other embodiments, the first exposure neutralizes the light source generator used in the second exposure
Can need to only ensure that corresponding exposure size is more than first under the exposure energy effect of the second exposure with difference
Corresponding exposure size under the exposure energy effect of exposure.Such as the energy of corresponding first exposure in Figure 12
The energy distribution curve 4 of the amount exposure of distribution curve 3 and second, and corresponding first exposure in Figure 13
The energy distribution curve 6 of the exposure of energy distribution curve 5 and second.
Because the second exposure and the first exposure use same mask plate, and mask plate described in the second exposure
Relative to mask plate described in the position of positive photoresist layer 230 and the first exposure relative to positive photoresist
The position of layer 230 is identical so that the first exposure region and the second exposure region are concentric, and in the exposure of the second exposure
Corresponding exposure size H2 is more than corresponding exposure under the exposure energy effect of the first exposure under light energy effect
Light size H1 so that the area of the second exposure region is covered more than the area and the second exposure region of the first exposure region
First exposure region.
With reference to Figure 14, carry out negativity development to the positive photoresist layer 230, the second exposure region of removal with
Outer positive photoresist layer 230, forms the target photoresist layer 231 with circular pattern.
The negativity development is developed using negativity developer to the positive photoresist layer 230, in institute
State in negativity development, the negativity developer dissolves the positive photoresist layer 230 beyond the second exposure region,
The material of the negativity developer be organic solution, such as n-butanol, positive fourth of the twelve Earthly Branches alcohol, hexamethylene, cyclohexanone,
Methyl methacrylate or EMA.
After carrying out negativity development, the positive photoresist layer 230 outside the second exposure region is removed, so as to protect
The positive photoresist layer 230 between the first exposure region and the second exposure region is stayed, has been ultimately formed with circular chart
The target photoresist layer 231 of case.
After negativity development, the second baking can also be carried out, be remained in just after the negativity is developed
Moisture removal on property photoresist layer 230.The temperature of second baking is 80 degrees Celsius~120 degrees Celsius,
So that positive photoresist layer 230 is unlikely to deformation, and will can be remained in just after negativity development faster
Moisture removal on property photoresist layer 230.
The pattern of the target photoresist layer 231 is circular pattern.In the present embodiment, the target light of formation
The pattern of photoresist layer 231 is circular loop pattern, in other embodiments, the figure of target photoresist layer 231
Case can be straight-flanked ring pattern or irregular circular pattern.
The present invention use only double exposure (including the first exposure and second exposure) and twice development (bag
Include positivity development and negativity development) the target photoresist layer 231 with circular pattern is formed, and need not
It is middle compared to existing technology to be formed as the ring for etching material layer to be etched using etching technics and depositing operation
Needed during shape mask pattern using exposure technology, developing process, etching technics and depositing operation
Situation, reduces the complexity of technique, and reduces process costs.
With reference to Figure 15, with target photoresist layer 231 for mask etching bottom anti-reflection layer 220 and hard mask
Layer 210, forms annular bottom portion anti-reflecting layer 221 and ring-type hard mask layer 211.
Preferably, the technique of etching bottom anti-reflecting layer 220 and hard mask layer 210 is anisotropy dry etching
Technique, advantageously allowing the ring-type hard mask layer 211 to be formed has perpendicular to material layer to be etched 200
Side wall.After forming ring-type hard mask layer 211, the annular bottom portion anti-reflecting layer 221 is removed.
The present invention also provides a kind of forming method of semiconductor devices, with reference to Figure 16, using above method shape
Into ring-type hard mask layer 211 be material layer to be etched 200 (referring to Figure 13) described in mask etching, formed
Ring target layer 201.
Preferably, the technique for etching material layer 200 to be etched is anisotropy dry carving technology, is conducive to making
The ring target layer 201 that must be formed has the side wall perpendicular to material layer to be etched 200.
Figure 17 is the corresponding ring target layer 201 of semiconductor devices that the present invention is formed, in the present embodiment,
The pattern of the ring target layer 201 of formation is circular loop pattern, in other embodiments, ring target layer
201 pattern can be straight-flanked ring pattern or irregular circular pattern.
It should be noted that work as there is no shape between material layer to be etched 200 and positive photoresist layer 230
During into bottom anti-reflection layer 220, with the target photoresist layer 231 for mask etching hard mask layer 210,
Ring-type hard mask layer 211 is formed, is then mask to the material layer to be etched with ring-type hard mask layer 211
200 (referring to Figure 13) perform etching, and form ring target layer 201；Or, when in material layer to be etched
When not forming bottom anti-reflection layer 220 and hard mask layer 210 between 200 and positive photoresist layer 230,
With target photoresist layer 231 for mask etching material layer 200 to be etched, ring target layer 201 is formed.
Specifically, the ring target layer 201 can be annular MTJ (MTJ) memory knot
The prototype of structure unit.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art,
Without departing from the spirit and scope of the present invention, can make various changes or modifications, therefore guarantor of the invention
Shield scope should be defined by claim limited range.
Claims (9)
1. a kind of patterning method of semiconductor devices, it is characterised in that including：
Material layer to be etched is provided；
Positive photoresist layer is formed in the material layer to be etched；
First exposure is carried out to the positive photoresist layer using mask plate, the shape in the positive photoresist layer
Into the first exposure region；
Positivity development is carried out to the positive photoresist layer, the positive photoresist layer of first exposure region is removed；
After carrying out positivity development, the second exposure is carried out to the positive photoresist layer using the mask plate,
The second exposure region is formed in the positive photoresist layer, mask plate is relative to positivity described in the second exposure
Position phase of the mask plate relative to positive photoresist layer described in the position of photoresist layer and the first exposure
Together, and under the exposure energy effect of the second exposure corresponding exposure size is more than the exposure of the first exposure
Corresponding exposure size under energy effect；
Negativity development is carried out to the positive photoresist layer, the positive-tone photo beyond second exposure region is removed
Glue-line, forms the target photoresist layer with circular pattern.
2. the patterning method of semiconductor devices according to claim 1, it is characterised in that the mask
The figure of version is pass pattern.
3. the patterning method of semiconductor devices according to claim 1, it is characterised in that the positivity
There is light acid producing agent and resin in photoresist layer.
4. the patterning method of semiconductor devices according to claim 1, it is characterised in that the positivity
The developer that development is used is tetramethyl ammonium hydroxide solution or tetraethyl ammonium hydroxide solution.
5. the patterning method of semiconductor devices according to claim 1, it is characterised in that the negativity
The developer that development is used is n-butanol, positive fourth of the twelve Earthly Branches alcohol, hexamethylene, cyclohexanone, methyl methacrylate
Or EMA.
6. the patterning method of semiconductor devices according to claim 1, it is characterised in that exposed first
After light and before positivity development, the first baking is also carried out to the positive photoresist layer；Exposed second
After light and before negativity development, the second baking is also carried out to the positive photoresist layer.
7. the patterning method of semiconductor devices according to claim 1, it is characterised in that forming institute
Also include following technique before stating positive photoresist layer：
Hard mask layer is formed in the material layer to be etched；
It is mask to the hard mask layer with the target photoresist layer after the target photoresist layer is formed
Perform etching, form ring-type hard mask layer.
8. a kind of forming method of semiconductor devices, it is characterised in that the ring-type formed using claim 7 is hard
Mask layer is treated etachable material layer and is performed etching for mask, forms ring target layer.
9. a kind of forming method of semiconductor devices, it is characterised in that use claim 1 to 6 any one
The target photoresist layer of formation is treated etachable material layer and is performed etching for mask, forms ring target layer.
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| CN113495430A (en) * | 2020-04-07 | 2021-10-12 | 芯恩（青岛）集成电路有限公司 | Photoresist patterning method and photoresist stripping method |
| CN114068419A (en) * | 2020-08-05 | 2022-02-18 | 长鑫存储技术有限公司 | Manufacturing method of semiconductor structure and semiconductor structure |
| CN117555205A (en) * | 2022-08-05 | 2024-02-13 | 上海光电科技创新中心 | Photoetching method and photoetching system |
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Application publication date: 20170613 |