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KR20080039006A - How to form a mask pattern - Google Patents

How to form a mask pattern Download PDF

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Publication number
KR20080039006A
KR20080039006A KR1020060106622A KR20060106622A KR20080039006A KR 20080039006 A KR20080039006 A KR 20080039006A KR 1020060106622 A KR1020060106622 A KR 1020060106622A KR 20060106622 A KR20060106622 A KR 20060106622A KR 20080039006 A KR20080039006 A KR 20080039006A
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South Korea
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photoresist film
negative
positive
tone working
hydrogen gas
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KR1020060106622A
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KR100913005B1 (en
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정우영
심귀황
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주식회사 하이닉스반도체
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Priority to KR1020060106622A priority Critical patent/KR100913005B1/en
Priority to TW096145873A priority patent/TW200925776A/en
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    • H10P76/204—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

본 발명은 마스크 패턴(mask pattern) 형성 방법에 관한 것으로, 기판 상부에 네거티브 포토레지스트(Negative Photo Resist)막을 형성하는 단계, 상기 네거티브 포토레지스트막의 일부 영역을 노광하는 단계, 노광된 네거티브 포토레지스트막을 현상하는 단계, 네거티브 톤 워킹 포토레지스트(negative tone working photo resist)막을 포함한 상기 기판 상부에 포지티브 포토레지스트(Positive Photo Resist)막을 형성하는 단계, 상기 네거티브 톤 워킹 포토레지스트막 경계부의 상기 포지티브 포토레지스트막으로 수소 기체(H+)가 확산되도록 상기 기판을 베이킹(baking)하는 단계, 및 상기 수소 기체(H+)가 확산된 포지티브 포토레지스트막을 현상하는 단계를 포함한다.The present invention relates to a method of forming a mask pattern, the method comprising: forming a negative photoresist film on a substrate, exposing a portion of the negative photoresist film, and developing an exposed negative photoresist film Forming a positive photoresist film on the substrate including a negative tone working photoresist film, and forming hydrogen into the positive photoresist film at the boundary of the negative tone working photoresist film. Baking the substrate such that gas (H +) is diffused, and developing a positive photoresist film in which the hydrogen gas (H +) is diffused.

Description

마스크 패턴 형성 방법{Method for forming a mask pattern}Method for forming a mask pattern

도 1a 내지 도 1f는 본 발명의 실시예에 따른 마스크 패턴 형성 방법을 도시한 공정단면도이다.1A to 1F are cross-sectional views illustrating a method of forming a mask pattern according to an exemplary embodiment of the present invention.

<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>

100 : 기판 110 : 바텀 난반사방지막100: substrate 110: bottom diffuse reflection film

120 : 네거티브 포토레지스트막 120a : 노광된 네거티브 포토레지스트막120: negative photoresist film 120a: exposed negative photoresist film

120b : 네거티브 톤 워킹 포토레지스트막 120c : 제1 스페이스120b: negative tone working photoresist film 120c: first space

130 : 포지티브 포토레지스트막130: positive photoresist film

130a : 수소 기체가 확산된 포지티브 포토레지스트막130a: positive photoresist film in which hydrogen gas is diffused

130b : 포지티브 톤 워킹 포토레지스트막 130c : 제2 스페이스     130b: positive tone working photoresist film 130c: second space

140 : 마스크 패턴140: mask pattern

본 발명은 마스크 패턴 형성 방법에 관한 것으로, 특히 화학 증폭 형(Chemically Amplified) 네거티브 포토레지스트(Negative Photo Resist)와 포지티브 포토레지스트(Positive Photo Resist)의 조합에 따른 노광 및 현상으로 패턴 피치(pattern pitch)를 감소시킬 수 있는 마스크 패턴(mask pattern) 형성 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a mask pattern, and in particular, a pattern pitch due to exposure and development according to a combination of a chemically amplified negative photoresist and a positive photoresist. It relates to a method of forming a mask pattern (mask pattern) that can reduce the.

반도체 제품들이 소형화, 고집적화됨에 따라 소자의 새로운 기능을 향상시키기 위해 패턴을 형성하는 패터닝(Patterning) 기술에 대한 관심이 높아지고 있다. 현재의 높은 집적도를 갖는 패터닝 기술은 반도체 제조의 핵심 기술로 발전해 왔으며, 주로 포토리소그래피(Photolithography) 공정이 이용되고 있다. 이러한 포토리소그래피 공정은 빛의 조사 여부에 따라 감응하는 화학 물질인 포토레지스트(Photo Resist; PR)를 도포하여 포토레지스트막을 형성하고, 이를 노광(exposure) 및 현상(develop)하여 마스크 패턴을 형성한 후 형성된 마스크 패턴을 이용하여 하부막을 선택적으로 식각함으로써 패터닝한다.As semiconductor products become smaller and more integrated, there is a growing interest in patterning techniques for forming patterns to improve new functions of devices. Current high integration patterning technology has been developed as a core technology of semiconductor manufacturing, and photolithography process is mainly used. In this photolithography process, a photoresist film is formed by applying a photoresist (PR), which is a chemical sensitive to light irradiation, and then a mask pattern is formed by exposing and developing the photoresist film. Patterning is performed by selectively etching the lower layer using the formed mask pattern.

일반적으로 패터닝 형성시 사용되는 포토레지스트막 노광 장비의 공정 능력 한계(해상도)는 라인 패턴(Line Pattern)과 스페이스(Space)의 합으로 정의되는 패턴 피치(Pitch)의 1/2배인 하프 피치(Half Pitch)를 기준으로 나타낸다. In general, the process capability limit (resolution) of the photoresist film exposure equipment used for forming the pattern is half the half of the pattern pitch defined by the sum of the line pattern and the space. Pitch).

현재까지 개발된 노광 장비의 해상도는 하프 피치를 기준으로 45nm로서, 네트 다이(net die)를 증가시키기 위해서는 패턴 피치 또는 하프 피치의 감소가 요구된다. The resolution of the exposure equipment developed to date is 45 nm based on the half pitch, and in order to increase the net die, a reduction in the pattern pitch or the half pitch is required.

본 발명은 화학 증폭형 네거티브 포토레지스트와 포지티브 포토레지스트의 조합에 따른 노광 및 현상으로 패턴 피치가 노광 장비의 해상도의 1/2배인 마스크 패턴을 형성할 수 있다.The present invention can form a mask pattern whose pattern pitch is 1/2 times the resolution of exposure equipment by exposure and development according to a combination of a chemically amplified negative photoresist and a positive photoresist.

상기한 목적을 달성하기 위하여 본 발명에 따른 마스크 패턴(mask pattern) 형성 방법은, 기판 상부에 네거티브 포토레지스트(Negative Photo Resist)막을 형성한다. 네거티브 포토레지스트막의 일부 영역을 노광한다. 네거티브 포토레지스트막을 현상한다. 네거티브 톤 워킹 포토레지스트(negative tone working photo resist)막을 포함한 기판 상부에 포지티브 포토레지스트(Positive Photo Resist)막을 형성한다. 네거티브 톤 워킹 포토레지스트막 경계부의 포지티브 포토레지스트막으로 수소 기체가 확산되도록 기판을 베이킹(Baking)한다. 포지티브 포토레지스트막을 현상한다.In order to achieve the above object, a mask pattern forming method according to the present invention forms a negative photoresist film on a substrate. A part of the negative photoresist film is exposed. The negative photoresist film is developed. A positive photoresist film is formed on the substrate including the negative tone working photoresist film. The substrate is baked such that hydrogen gas is diffused into the positive photoresist film at the negative tone working photoresist film boundary. The positive photoresist film is developed.

상기에서, 네거티브 포토레지스트막을 형성하는 단계 이전에 바텀 난반사방지(Bottom Anti-Reflective Coating; BARC)막을 형성하는 단계를 더 포함한다. 네거티브 포토레지스트막 및 포지티브 포토레지스트막 각각은 화학 증폭형 포토레지스트로 형성된다. The method may further include forming a bottom anti-reflective coating (BARC) film before the forming of the negative photoresist film. Each of the negative photoresist film and the positive photoresist film is formed of a chemically amplified photoresist.

네거티브 톤 워킹 포토레지스트막과 네거티브 톤 워킹 포토레지스트막 사이의 스페이스의 합은 노광 장비의 해상도의 2배인 패턴 피치를 갖는다. 포지티브 포토레지스트막은 베이킹에 의해 네거티브 톤 워킹 포토레지스트막 측부에 확산될 수 소 기체의 두께를 고려하여 네거티브 톤 워킹 포토레지스트막 상부의 두께가 네거티브 톤 워킹 포토레지스트막 측부에 확산될 수소 기체의 두께보다 얇게 형성된다. 포지티브 포토레지스트막은 네거티브 톤 워킹 포토레지스트막 측부에 확산된 수소 기체의 두께가 상부보다 얇게 형성된다.The sum of the spaces between the negative tone working photoresist film and the negative tone working photoresist film has a pattern pitch that is twice the resolution of the exposure equipment. The positive photoresist film is thicker than the thickness of the hydrogen gas to be diffused to the negative tone working photoresist film in consideration of the thickness of the hydrogen gas to be diffused on the side of the negative tone working photoresist film by baking. It is thinly formed. In the positive photoresist film, the thickness of the hydrogen gas diffused on the side of the negative tone working photoresist film is made thinner than that of the upper part.

마스크 패턴은 네거티브 톤 워킹 포토레지스트막 측부의 확산된 수소 기체를 포함하는 포지티브 포토레지스트막을 제거하여 목표 간격이 되도록 패턴 피치를 조절한다. 마스크 패턴은 네거티브 톤 워킹 포토레지스트막과 포지티브 톤 워킹 포토레지스트막이 스페이스만큼 이격되어 교대로 반복되어 형성된다.The mask pattern removes the positive photoresist film containing the diffused hydrogen gas on the side of the negative tone working photoresist film to adjust the pattern pitch to be the target interval. The mask pattern is formed by alternately repeating the negative tone working photoresist film and the positive tone working photoresist film spaced apart by a space.

마스크 패턴은 네거티브 톤 워킹 포토레지스트막 또는 포지티브 톤 워킹 포토레지스트막과 스페이스의 합은 노광 장비의 해상도와 동일한 패턴 피치를 갖는다. The mask pattern has a pattern pitch in which the sum of the negative tone working photoresist film or the positive tone working photoresist film and the space is equal to the resolution of the exposure equipment.

이하, 첨부된 도면들을 참조하여 본 발명의 일 실시예를 보다 상세히 설명한다. 그러나, 본 발명의 실시예들은 여러 가지 다른 형태로 변형될 수 있으며, 본 발명의 범위가 아래에서 상술하는 실시예들로 인해 한정되어지는 것으로 해석되어져서는 안되며, 당업계에서 보편적인 지식을 가진 자에게 본 발명을 보다 완전하게 설명하기 위해서 제공되어지는 것으로 해석되는 것이 바람직하다.Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying drawings. However, the embodiments of the present invention can be modified in many different forms, and the scope of the present invention should not be construed as being limited by the embodiments described below, and those skilled in the art It is preferred that the present invention be interpreted as being provided to more fully explain the present invention.

도 1a 내지 도 1f는 본 발명의 실시예에 따른 마스크 패턴 형성 방법을 도시한 공정단면도이다.1A to 1F are cross-sectional views illustrating a method of forming a mask pattern according to an exemplary embodiment of the present invention.

도 1a를 참조하면, 기판(100) 상부에 바텀 난반사방지(Bottom Anti- Reflective Coating; BARC)막(110)을 형성한다. BARC막(110)은 기판(100) 표면으로부터 반사되는 노광원의 반사광을 제어하기 위해 형성하며, 반드시 형성해야 하는 것은 아니다. Referring to FIG. 1A, a bottom anti-reflective coating (BARC) film 110 is formed on the substrate 100. The BARC film 110 is formed to control the reflected light of the exposure source reflected from the surface of the substrate 100, and is not required to be formed.

BARC막(110) 상부에는 네거티브 포토레지스트(Negative Photo Resist)막(120)을 형성한다. 바람직하게, 네거티브 포토레지스트막(120)은 화학 증폭형 레지스트(Chemically Amplified Resist)로 형성한다. A negative photoresist film 120 is formed on the BARC film 110. Preferably, the negative photoresist film 120 is formed of a chemically amplified resist.

화학 증폭형 레지스트는 양자 수율이 100%보다 큰 레지스트를 의미하는 것으로서, 수지(Resin)와 포토 산 제너레이터(Photo Acid Generator; PAG)를 기본으로 콘트라스트(contrast) 향상 및 용해도 제어를 위해 반응 억제제(Inhibitor)를 사용하는 경우가 있다. 여기서, 화학 증폭형 레지스트로는 폴리하이드록시스티렌(polyhydroxystyrene;PHST) 수지의 일부를 t-부톡시카르보닐(t-buthoxycarbonyl; t-BOC)기로 적당한 비율(n/m)만큼 치환하여 현상기(developer)에 대한 용해도를 제어한 매트릭스 수지(matrix resin)를 사용할 수 있다. 이 경우, 네거티브 포토레지스트막(120)은 스핀 코팅(Spin Coating) 방식으로 형성할 수 있다.Chemically amplified resist refers to a resist having a quantum yield of more than 100%, and is based on Resin and Photo Acid Generator (PAG) to increase contrast and control solubility. ) May be used. Here, as a chemically amplified resist, a part of polyhydroxystyrene (PHST) resin is substituted with a t-buthoxycarbonyl (t-BOC) group by an appropriate ratio (n / m) to develop a developer. Matrix resin with controlled solubility in In this case, the negative photoresist film 120 may be formed by spin coating.

도 1b를 참조하면, 네거티브 포토레지스트막(120)의 일부 영역을 노광(expose)한다. 여기서, 노광원으로는 ArF 또는 KrF를 이용할 수 있다. 이렇듯, 노광에 의해 형성된 산(acid)은 O-t-BOC를 O-H로 환원시켜 알칼리 용액에 녹는 상태로 만들게 되고 이때 부산물로 나온 수소 기체(H+)는 다시 주변의 t-BOC를 디프로텍션(deprotection)하는데 사용되어 증폭작용을 하게 된다. 이로써, 수소 기체(H+)를 포함하는 노광된 네거티브 포토레지스트막(120a)이 형성된다. Referring to FIG. 1B, a portion of the negative photoresist film 120 is exposed. Here, ArF or KrF may be used as the exposure source. As such, the acid formed by exposure reduces Ot-BOC to OH to be dissolved in an alkaline solution. At this time, hydrogen gas (H +) from the by-product deprotection the surrounding t-BOC again. Used to amplify. As a result, an exposed negative photoresist film 120a containing hydrogen gas (H +) is formed.

특히, 본 발명은 후속 베이킹 공정을 통해 노광된 네거티브 포토레지스트막(120a) 측벽의 포지티브 포토레지스트막(미도시)으로 수소 기체(H+)가 확산된 만큼의 두께를 제거하여 패턴 피치를 조절하는데, 이는 노광량을 조절하여 포지티브 포토레지스트막으로 확산되는 수소 기체(H+)의 두께를 조절함으로써 제어한다.In particular, the present invention controls the pattern pitch by removing the thickness of the hydrogen gas (H +) diffused into the positive photoresist film (not shown) of the sidewall of the negative photoresist film 120a exposed through a subsequent baking process. This is controlled by adjusting the exposure amount to adjust the thickness of the hydrogen gas (H +) diffused into the positive photoresist film.

도 1c를 참조하면, 노광된 네거티브 포토레지스트막(120a)을 현상한다. 노광에 의해 형성된 수소 기체(H+)가 포토레지스트와 가교반응을 일으켜 노광된 포토레지스트막(120a)은 현상액에 녹지 않고 남게 된다. 이로써, 노광 후 노광부위가 패턴으로 남는 포토레지스트인 네거티브 톤 워킹 포토레지스트막(negative tone working photo resist layer; 120b)이 형성된다.Referring to FIG. 1C, the exposed negative photoresist film 120a is developed. The hydrogen gas (H +) formed by exposure causes a crosslinking reaction with the photoresist, so that the exposed photoresist film 120a remains in the developer without being dissolved. As a result, a negative tone working photoresist layer 120b, which is a photoresist in which the exposed portion after exposure is left as a pattern, is formed.

네거티브 톤 워킹 포토레지스트막(120b)과 네거티브 톤 워킹 포토레지스트막(120b) 사이의 제1 스페이스(120c)의 합은 패턴 피치(P1)로 정의되며, 노광 장비 해상도의 2배 간격이 된다.The sum of the first spaces 120c between the negative tone working photoresist film 120b and the negative tone working photoresist film 120b is defined as the pattern pitch P1 and is twice the resolution of the exposure equipment.

도 1d를 참조하면, 네거티브 톤 워킹 포토레지스트막(120b)을 포함한 기판(100) 상부에 포지티브 포토레지스트막(130)을 형성한다. 바람직하게, 포지티브 포토레지스트막(130)은 화학 증폭형 레지스트로 형성하며, 이 경우 스핀 코팅 방식으로 형성할 수 있다.Referring to FIG. 1D, a positive photoresist film 130 is formed on the substrate 100 including the negative tone working photoresist film 120b. Preferably, the positive photoresist layer 130 is formed of a chemically amplified resist, and in this case, may be formed by spin coating.

여기서, 네거티브 톤 워킹 포토레지스트막(120b) 상부에 형성되는 포지티브 포토레지스트막(130)의 두께는 후속한 베이킹(baking) 공정을 통해 네거티브 톤 워킹 포토레지스트막(120b) 측부에 수소 기체(H+)의 확산으로 인해 제거되는 두께보다 얇게 형성하여 현상 용액이 수소 기체(H+)가 확산된 포지티브 포토레지스트막 (미도시) 하부로 침투할 수 있게 한다.In this case, the thickness of the positive photoresist film 130 formed on the negative tone working photoresist film 120b is determined by the hydrogen gas (H +) on the side of the negative tone working photoresist film 120b through a subsequent baking process. It is formed to be thinner than the thickness removed due to the diffusion of the developer solution can penetrate under the positive photoresist film (not shown) diffusion of hydrogen gas (H +).

도 1e를 참조하면, 포지티브 포토레지스트막(130)이 형성된 기판(100)을 베이킹한다. 이로써, 네거티브 톤 워킹 포토레지스트막(120b)의 전체 표면에 소정 두께만큼 수소 기체(H+)가 확산되어 수소 기체(H+)가 확산된 포지티브 포토레지스트막(130a)이 형성된다. 이때, 수소 기체(H+)가 확산된 포지티브 포토레지스트막(130a)은 네거티브 톤 워킹 포토레지스트막(120b) 측부의 두께가 네거티브 톤 워킹 포토레지스트막(120b) 상부의 두께보다 두껍게 형성된다.Referring to FIG. 1E, the substrate 100 on which the positive photoresist film 130 is formed is baked. As a result, hydrogen gas H + is diffused by a predetermined thickness on the entire surface of the negative tone working photoresist film 120b to form a positive photoresist film 130a in which hydrogen gas H + is diffused. In this case, the positive photoresist film 130a in which the hydrogen gas H + is diffused is formed to have a thickness greater than that of the negative tone working photoresist film 120b.

도 1f를 참조하면, 수소 기체(H+)가 확산된 포지티브 포토레지스트막(130)만을 선택적으로 현상한다. 이 경우, 수소 기체(H+)가 확산된 포지티브 포토레지스트막(130a)은 수소 기체(H+)가 포토 레지스트와 분해반응을 일으켜 현상액에 녹아 제거된다. 그 결과, 포지티브 톤 워킹 포토레지스트막(positive tone working photo resist layer; 130b)이 형성된다. Referring to FIG. 1F, only the positive photoresist film 130 in which hydrogen gas H + is diffused is selectively developed. In this case, the positive photoresist film 130a in which the hydrogen gas (H +) is diffused is removed by dissolving hydrogen gas (H +) in the developing solution due to decomposition reaction with the photoresist. As a result, a positive tone working photoresist layer 130b is formed.

이로써, 네거티브 톤 워킹 포토레지스트막(120b)과 네거티브 톤 워킹 포토레지스트막(120b)보다 두껍게 형성된 포지티브 톤 워킹 포토레지스트막(130b)이 제2 스페이스(130c)만큼 이격되어 교대로 반복되는 마스크 패턴(140)이 완성된다. 여기서, 네거티브 톤 워킹 포토레지스트막(120b) 사이에 포지티브 톤 워킹 포토레지스트막(130b)이 형성되므로 도 1c의 제1 스페이스(120c)에 비해 제2 스페이스(130c)의 간격은 포지티브 톤 워킹 포토레지스트막(130b)과 제2 스페이스(130c)를 합한 간격만큼 좁아진다. As a result, the mask pattern (the negative tone working photoresist film 120b and the positive tone working photoresist film 130b formed thicker than the negative tone working photoresist film 120b are alternately repeated by being spaced apart by the second space 130c). 140) is completed. Herein, since the positive tone working photoresist film 130b is formed between the negative tone working photoresist film 120b, the interval of the second space 130c is more positive than the first space 120c of FIG. 1c. The thickness of the film 130b and the second space 130c is narrowed.

상기한 바와 같이, 마스크 패턴(140)은 네거티브 톤 워킹 포토레지스트 막(120b) 또는 포지티브 톤 워킹 포토레지스트막(130b)과 네거티브 톤 워킹 포토레지스트막(120b)과 포지티브 톤 워킹 포토레지스트막(130b) 사이의 제2 스페이스(130c)의 합으로 정의되는 패턴 피치(P2)를 갖으며, 이는 목표 간격이 된다. 따라서, 본 발명에 따른 마스크 패턴(140)의 패턴 피치(P2)는 네거티브 포토레지스트막(120)만을 이용한 노광 및 현상으로 형성된 패턴 피치(P1)보다 1/2배 작아진다. 즉, 본 발명에 따른 마스크 패턴(140)은 노광 장비의 해상도와 동일한 간격의 패턴 피치를 구현할 수 있다.As described above, the mask pattern 140 may include a negative tone working photoresist film 120b or a positive tone working photoresist film 130b, a negative tone working photoresist film 120b, and a positive tone working photoresist film 130b. It has a pattern pitch P2 defined as the sum of the second spaces 130c therebetween, which becomes the target interval. Therefore, the pattern pitch P2 of the mask pattern 140 according to the present invention is 1/2 times smaller than the pattern pitch P1 formed by exposure and development using only the negative photoresist film 120. That is, the mask pattern 140 according to the present invention may implement a pattern pitch of the same interval as the resolution of the exposure equipment.

이와 같이 형성된 마스크 패턴(140)은 반도체 소자 공정에서 게이트 전극이나 비트 라인 등과 같이 실제 패턴을 형성하기 위한 하드 마스크(hard mask)로 사용되며, 이를 통해 패턴 피치를 감소시켜 네트 다이(net die)를 증가시킬 수 있다.The mask pattern 140 formed as described above is used as a hard mask for forming an actual pattern, such as a gate electrode or a bit line, in a semiconductor device process, thereby reducing the pattern pitch to form a net die. Can be increased.

본 발명은 이상에서 살펴본 바와 같이 바람직한 실시예에 대하여 설명하였지만, 본 발명은 이에 한정되는 것은 아니며, 본 발명이 속하는 기술분야의 통상의 지식을 가진 자라면 특허청구범위와 발명의 상세한 설명 및 첨부한 도면의 범위 안에서 여러 가지로 변형하여 실시하는 것이 가능하고 이 또한 본 발명의 범위에 속하는 것은 당연하다.Although the present invention has been described with respect to the preferred embodiment as described above, the present invention is not limited to this, and those skilled in the art to which the present invention pertains the claims and the detailed description of the invention and attached It is possible to carry out various modifications within the scope of the drawings and this also belongs to the scope of the present invention.

본 발명은 화학 증폭형 네거티브 포토레지스트와 포지티브 포토레지스트의 조합에 따른 노광 및 현상으로 기존의 한 종류의 포토레지스트막만을 이용할 경우보다 패턴 피치가 1/2배 감소된 마스크 패턴을 형성할 수 있다. According to the present invention, a mask pattern having a pattern pitch reduced by 1/2 times as compared with the case of using only one type of photoresist film may be formed by exposure and development by a combination of a chemically amplified negative photoresist and a positive photoresist.

본 발명은 패턴 피치가 감소된 마스크 패턴을 반도체 소자의 제조 공정에 이용함으로써 네트 다이를 증가시킬 수 있디.The present invention can increase the net die by using a mask pattern with a reduced pattern pitch in the manufacturing process of the semiconductor device.

Claims (9)

기판 상부에 네거티브 포토레지스트막을 형성하는 단계;Forming a negative photoresist film on the substrate; 상기 네거티브 포토레지스트막의 일부 영역을 노광하는 단계;Exposing a portion of the negative photoresist film; 노광된 네거티브 포토레지스트막을 현상하는 단계;Developing the exposed negative photoresist film; 네거티브 톤 워킹 포토레지스트막을 포함한 상기 기판 상부에 포지티브 포토레지스트막을 형성하는 단계;Forming a positive photoresist film on the substrate including a negative tone working photoresist film; 상기 네거티브 톤 워킹 포토레지스트막 경계부의 상기 포지티브 포토레지스트막으로 수소 기체가 확산되도록 상기 기판을 베이킹하는 단계; 및 Baking the substrate such that hydrogen gas is diffused into the positive photoresist film at the boundary of the negative tone working photoresist film; And 상기 수소 기체가 확산된 포지티브 포토레지스트막을 현상하는 단계를 포함하는 마스크 패턴 형성 방법.And developing a positive photoresist film in which the hydrogen gas is diffused. 제 1 항에 있어서,The method of claim 1, 상기 네거티브 포토레지스트막을 형성하는 단계 이전에 바텀 난반사방지막을 형성하는 단계를 더 포함하는 마스크 패턴 형성 방법.And forming a bottom antireflection film before the forming of the negative photoresist film. 제 1 항에 있어서,The method of claim 1, 상기 네거티브 포토레지스트막 및 포지티브 포토레지스트막 각각은 화학 증폭형 포토레지스트로 형성되는 마스크 패턴 형성 방법.And each of the negative photoresist film and the positive photoresist film is formed of a chemically amplified photoresist. 제 1 항에 있어서,The method of claim 1, 상기 네거티브 톤 워킹 포토레지스트막과 상기 네거티브 톤 워킹 포토레지스트막 사이의 스페이스의 합은 노광 장비의 해상도의 2배인 피치를 갖는 마스크 패턴 형성 방법.And the sum of the spaces between the negative tone working photoresist film and the negative tone working photoresist film has a pitch that is twice the resolution of exposure equipment. 제 1 항에 있어서,The method of claim 1, 상기 포지티브 포토레지스트막은 베이킹에 의해 상기 네거티브 톤 워킹 포토레지스트막 측부에 확산될 수소 기체의 두께를 고려하여 네거티브 톤 워킹 포토레지스트막 상부의 두께가 네거티브 톤 워킹 포토레지스트막 측부에 확산될 수소 기체의 두께보다 얇게 형성되는 마스크 패턴 형성 방법.The positive photoresist film has a thickness of hydrogen gas to be diffused on the side of the negative tone working photoresist film in consideration of the thickness of hydrogen gas to be diffused on the side of the negative tone working photoresist film by baking. Mask pattern forming method that is formed thinner. 제 1 항에 있어서,The method of claim 1, 상기 포지티브 포토레지스트막은 상기 네거티브 톤 워킹 포토레지스트막 측부에 확산된 수소 기체의 두께가 상부보다 얇게 형성되는 마스크 패턴 형성 방법.The positive photoresist film is a mask pattern forming method wherein the thickness of the hydrogen gas diffused to the side of the negative tone working photoresist film is formed thinner than the top. 제 1 항에 있어서,The method of claim 1, 상기 마스크 패턴은 상기 네거티브 톤 워킹 포토레지스트막 측부의 확산된 수소 기체를 포함하는 포지티브 포토레지스트막을 제거하여 목표 간격이 되도록 패턴 피치를 조절하는 마스크 패턴 형성 방법.And removing the positive photoresist film including the diffused hydrogen gas at the side of the negative tone working photoresist film to adjust the pattern pitch to a target interval. 제 1 항에 있어서,The method of claim 1, 상기 마스크 패턴은 네거티브 톤 워킹 포토레지스트막과 포지티브 톤 워킹 포토레지스트막이 스페이스만큼 이격되어 교대로 반복되어 형성되는 마스크 패턴 형성 방법.And the mask pattern is formed by alternately repeating a negative tone working photoresist film and a positive tone working photoresist film spaced apart by a space. 제 8 항에 있어서,The method of claim 8, 상기 마스크 패턴은 네거티브 톤 워킹 포토레지스트막 또는 포지티브 톤 워킹 포토레지스트막과 스페이스의 합은 노광 장비의 해상도와 동일한 패턴 피치를 갖는 마스크 패턴 형성 방법.And the mask pattern has a pattern pitch in which the sum of the negative tone working photoresist film or the positive tone working photoresist film and the space has the same pattern pitch as the resolution of the exposure equipment.
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