CN106841383B - An integrated impedance-loaded surface acoustic wave gas sensor - Google Patents
An integrated impedance-loaded surface acoustic wave gas sensor Download PDFInfo
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- CN106841383B CN106841383B CN201611225354.1A CN201611225354A CN106841383B CN 106841383 B CN106841383 B CN 106841383B CN 201611225354 A CN201611225354 A CN 201611225354A CN 106841383 B CN106841383 B CN 106841383B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/02—Analysing fluids
- G01N29/022—Fluid sensors based on microsensors, e.g. quartz crystal-microbalance [QCM], surface acoustic wave [SAW] devices, tuning forks, cantilevers, flexural plate wave [FPW] devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
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Abstract
The invention discloses a kind of integrated form impedance load sonic surface wave gas sensors based on Si substrate, including substrate, piezoelectric layer, input/output interdigital transducer, reflection interdigital transducer, sensitive interdigital electrode and air-sensitive film.By growing one layer of thin SiO on a si substrate2Insulating layer and piezoelectric layer have good temperature characterisitic；Si substrate material has the characteristics that low cost, large scale, conductive, can be compatible with IC industry；The arrangement architecture of interdigital electrode is optimized, it can be reduced the reflection of sound wave caused by external sensor, while ghost effect caused by connecting line can be reduced, interdigital transducer and sensitive interdigital electrode are once made, the simplification for ensuring manufacturing process is easy to be mass produced.The present invention realizes the wireless and passive measurement of sensor, transducing part and the signal translator unit influenced vulnerable to the external world can be separated, extend the scope of application of sensor.
Description
Technical field
The invention belongs to surface acoustic wave techniques fields, more particularly, to a kind of integrated form based on semiconductor material Si
Wireless and passive impedance load surface acoustic wave SAW gas sensor.
Background technique
Since extraneous factor (such as temperature, humidity, pressure, magnetic field, electric field) can make the transmission characteristic of SAW change,
And SAW device work in radio-frequency range, anti-electromagnetic interference capability is strong, thus SAW sensor using more and more extensive.It is existing
SAW device is made of piezoelectric material substrate with the interdigital transducer (IDT) for being deposited on different function on substrate, and existing
SAW gas sensor is then one layer of air-sensitive film of covering on the basis of this structure, reacts, makes with gas to be detected
SAW changes in transmission characteristic wherein, to play the role of measuring gas.
SAW device is passive device, and wireless sensing easy to accomplish, therefore can be used for the special of many active measurements of inconvenience
Occasion.The working principle of wireless and passive SAW sensor is: firstly, RF interrogation unit issues high frequency challenge signal, signal is straight
It connects the antenna being connected with IDT to receive, is converted into electric signal.IDT converts the electrical signal to the SAW propagated in piezoelectric crystal surface,
The reflection interdigital transducer that part SAW energy is transmitted on path reflects, then converts acoustic signals into telecommunications by IDT
Number, then sent by antenna.Radio frequency receiver receives the feedback signal sent out by the antenna of SAW sensor, will
It is sent to computer or other signal processing units carry out signal processing.The information of the perceived amount in the external world and SAW sensor
Identity identification information is included in feedback signal, and the mesh of wireless and passive measurement is finally reached by the extraction to these information
's.
Impedance load SAW sensor refers to that sensing arrangement is added on the reflector of SAW chip constitutes combined sensor,
For this impedance load SAW sensor other than having the advantages that general wireless and passive SAW sensor, it transmits SAW signal
Module is encapsulated, and it is possible can to provide more measurements, and more just with the sensing module of external different function when in use
Suitable SAW sensor module.
There are mainly two types of structures for wireless and passive impedance load SAW sensor at this stage: delay line type resonator type.At present
Mainly using delay-line structure, it, as reflector, is connected using interdigital electrode with additional transducing part, therefore it is anti-
Coefficient is penetrated to change with the variation of external impedance (inductance, capacitor or resistance), if extraneous perceived physical quantity changes,
The impedance of external sensing arrangement will change, then the reflection coefficient for the reflection interdigital electrode being attached thereto can also become
Change, corresponding reflection peak also contains the extraneous perceived information measured in feedback signal accordingly, and the information is via reading
Writing device detected, to realize measurement purpose.
Existing SAW gas sensor portion is the transmission region deposition air-sensitive film in SAW, forms layer structure (example
Such as patent document 1 " a kind of sonic surface wave gas sensors ", application number: 201610173136.1), but the air-sensitive of this structure
Region cannot be isolated with sound-electric transition region, therefore be easy to damage electrode in air-sensitive film deposition process, and sound wave exists
As acoustoelectric effect occurs and generates loss in communication process.
Existing wireless and passive impedance load SAW gas sensor is mostly fabricated structure, i.e., transmits chip in SAW signal
Reflector on an external traditional gas sensor.First, manufacture difficulty is increased in this way, needs multiple planar technology point
It Zhi Zao not the electrode of SAW signal transmission chip and the electrode of external gas sensor；Second, the inappropriate arrangement of lead is easy to cause
Ghost effect, generate pF and nH rank capacitor and inductance, so again external sensor when, the impedance variations pair of external sensor
The return loss effects of sensor are very small, cause the resolution ratio of sensor very low.
Summary of the invention
Aiming at the above defects or improvement requirements of the prior art, it is negative that the present invention provides a kind of Integral wireless passive impedances
SAW gas sensor is carried, its object is to SAW signal transmission chip and external sensing arrangement are integrated in Si substrat structure jointly
On, thus solve that complex process of the existing technology, at high cost, producing efficiency is low, high-frequency high temperature characteristic difference and is difficult to collect
At the technical issues of.
A kind of gas sensor proposed by the present invention, including substrate, piezoelectric layer, input/output interdigital transducer, reflection fork
Finger transducer, sensitive interdigital electrode and air-sensitive film.Wherein:
The substrate is insulation material layer, for growing piezoelectric layer；
The piezoelectric layer is produced on insulation material layer, for the conversion of mechanical deformation and electric signal, to realize super
The conversion of sound wave and radiofrequency signal；
The input/output interdigital transducer, reflection interdigital transducer and sensitive interdigital electrode are shape as finger intersects
The metal pattern of shape, for realizing acoustic-electric transducing；The input/output interdigital transducer, reflection interdigital transducer and sensitive fork
Refer to that electrode is sequentially produced in piezoelectric layer surface；Input/output interdigital transducer and reflection interdigital transducer parallel alignment, so as to
It is coupled in ultrasonic transmission；
The air-sensitive film is deposited on sensitive interdigital electrode overlying regions, collectively forms sensing knot with sensitive interdigital electrode
Structure is used for probe gas；The film thickness is easy in conjunction with piezoelectric layer between 50nm-50um.
The input/output interdigital transducer is used for signal input and output, and one side converts electrical signals to ultrasonic wave,
Reflection interdigital transducer is sent to by piezoelectric layer；On the other hand, the ultrasonic wave that interdigital transducer is sent will be reflected and is converted to electricity
Signal output；
The reflection interdigital transducer is used to reflect the ultrasonic wave inputted and returns to input/output interdigital transducer, while with
Sensing arrangement is connected, and receives the information that sensing arrangement transmits；Connection type can be conducting wire or other means；
The sensing arrangement is the sensitive area of sensor, for perceiving gas；When work, with the change of under test gas concentration
To change, the material property (such as conductivity, density) of air-sensitive film can change, then the impedance of sensing arrangement can change,
Cause the reflection coefficient for the reflection interdigital electrode being attached thereto to change, thus is reflected into input/output interdigital transducer
The corresponding reflection peak of signal contains the information of extraneous perceived amount, to realize the perception and transmission of gas information.
Further, the substrate is the SiO of growth on a si substrate2Insulating layer.
Further, the piezoelectric layer can be the high piezoelectric material of the Curie temperature including ZnO, AlN and GaN,
It is also possible to the monocrystalline thin layer such as LiNbO3, LiTaO3, lithium tetraborate；The input/output interdigital transducer, the interdigital transducing of reflection
The electrode material of device is identical, selects the metal material including aluminium, copper, gold etc., is produced on piezoelectric layer using the method for photoetching
Surface.
Further, the electrode that entire sensor is related to is designed to single finger-type structure with special depth-width ratio；Fork
Finger transducer, the period for reflecting interdigital transducers electrodes and aperture obtain excellent according to the principle of impedance matching and minimal energy loss
Change, to increase the amplitude variable quantity of reflection echo；Interdigital transducer is identical with the reflection finger parameter of interdigital transducer, to obtain
Higher coupling efficiency increases the amplitude variable quantity of reflection echo, to further increase transducer sensitivity.
Further, the input/output interdigital transducer and reflection interdigital transducer distance are arranged in 50-200 wave
In long range, surface acoustic wave and the reflection interdigital transducer that then input/output interdigital transducer can closely excite very much are reflected
Surface acoustic wave interfere with each other, it is too far then can because of the influence of diffraction effect increase be lost.
Further, the sensitive interdigital electrode and reflection interdigital transducer distance be input/output interdigital transducer with
Reflect 5-15 times or so of interdigital transducer distance.
Further, the sensitive interdigital electrode finger battle array and reflection interdigital transducer finger battle array are not parallel, the two angle
Preferred value is 30-60 degree.
Further, the air-sensitive film is the inorganic thin film to gas sensitization such as zinc oxide, stannic oxide, either
The organic films such as polyethylene glycol, polyurethane, coverage area depend on the interdigital electrode size made thereon.
Further, the input/output interdigital transducer is connected with antenna or conducting wire, for realizing wirelessly or non-wirelessly
Signal transmitting and receiving mode.
Further, the input/output interdigital transducer and reflection interdigital transducer are designed to resonator structure, that is, exist
The both sides of input/output interdigital transducer are both provided with reflection interdigital transducer, and the reflection disposed in parallel of formation multiple groups is interdigital to change
Energy device, (the wireless and passive impedance load SAW sensor of this structure only responds to identical or close as resonator intrinsic frequency
Pumping signal can use the resonance frequency that its good frequency selective characteristic directly measures reflection device intrinsic frequency, thus
The measured size of perception) to further increase device Q value, reduce transmission loss, raising radio transmission distance.The resonance
Device structure, including reflection IDT--- input and output IDT--- reflection IDT--- sensing arrangement.
Further, the input/output interdigital transducer and reflection interdigital transducer be designed to resonator structure, with into
One step improves device Q value, reduces transmission loss, raising radio transmission distance.
In the present invention, the period of input/output interdigital transducer and reflection interdigital transducer determines according to working frequency,
Finger length is determined that finger number is determined by bandwidth of a device by electrical impedance；Period of sensitive interdigital electrode, finger number,
Finger length is determined by the property (such as resistivity, dielectric constant) of air-sensitive film.
In general, through the invention it is contemplated above technical scheme is compared with the prior art, since Si used is served as a contrast
Bottom material has the characteristics that low cost, large scale, conductive, can be perfectly compatible with IC industry, and this integrated knot
Structure can reduce ghost effect caused by connecting line, it is ensured that the simple type of manufacturing process is easy to be mass produced.The present invention is logical
Cross one layer of thin SiO of growth on a si substrate2Insulating layer covers one layer of piezoelectric thin layer again thereon, collectively constitutes substrat structure, this
The substrat structure of sample will have very big advantage when making air-sensitive film, will not because of higher heat treatment temperature change property
Matter, to influence performance.Meanwhile the arrangement architecture of interdigital electrode is also optimized in the present invention, by the fork of delay-line structure
Refer to that the interdigital electrode of electrode and external sensor connects at an angle, can thus reduce sound wave caused by external sensor
Reflection avoids influencing sensor performance.
Detailed description of the invention
Fig. 1 is delay line type wireless passive sonic surface wave impedance load sensor plane schematic diagram；
Fig. 2 is resonator type wireless passive sonic surface wave impedance load sensor plane schematic diagram；
In all the appended drawings, identical appended drawing reference is used to denote the same element or structure, in which:
1. input/output interdigital transducer, 2. reflection interdigital transducers, 3. sensitive interdigital electrodes, 4. air-sensitive films, 5.Si
Substrate；6. input/output interdigital transducer, 7. reflection interdigital transducers, 8. sensitive interdigital electrodes, 9. air-sensitive films, 10.Si lining
Bottom.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in the various embodiments of the present invention described below
Not constituting a conflict with each other can be combined with each other.
The present invention is described in more detail with reference to the accompanying drawing.
As shown in Figure 1, gas sensor of the invention includes antenna, input/output interdigital transducer 1, reflects interdigital change
It can device 2, sensitive interdigital electrode 3, air-sensitive film 4 and silicon substrate 5.
One layer of thin oxide layer is grown on the silicon substrate, is then covered a lamination conductive film again, is formed complete substrate
Structure.The input/output interdigital transducer, reflection interdigital transducer and sensitive interdigital electrode integrate over the substrate, institute
Delay-line structure can be designed to by stating input/output interdigital transducer and the reflection interdigital transducer, and the reflection is interdigital to change
Energy device is connected with sensitive interdigital electrode, and the air-sensitive film is deposited on sensitive interdigital electrode overlying regions, with sensitive interdigital electrode
Collectively form sensing arrangement.The antenna is connected with the electrode tip of input/output interdigital transducer, RF interrogation unit transmitting
Wireless signal, which receives through the antenna and passes through input/output interdigital transducer, is converted into SAW, uploads in the piezoelectric substrate
It broadcasts, generates reflection after reaching the reflection interdigital transducer, the sound wave being reflected back turns again via input/output interdigital transducer
It turns to radio wave to be transmitted through antenna, radio frequency receiver receives the feedback signal that above-mentioned antenna is sent out, at signal
Reason and information extraction, can be realized the sensing measurement of wireless and passive.
Wherein, base material can be the common cut type of Si material, and electrode material can be the electrodes such as aluminium, copper, gold, described
External sensor on air-sensitive film can be zinc oxide, stannic oxide, organic matter etc..Piezoelectric membrane can be zinc oxide,
Aluminium nitride, gallium nitride, LiNbO3Monocrystal thin films etc..
The wireless signal that RF interrogation unit is sent is received by the antenna, and it is interdigital to propagate to the input/output being connected with antenna
Radio wave is converted surface acoustic wave by energy converter 1, input/output interdigital transducer 1, and surface acoustic wave is propagated on Si substrate 5,
After reaching reflection interdigital transducer 2, reflection is generated.Due to reflecting the external sensing arrangement of interdigital transducer 2, when external sensing arrangement
When impedance variations, the external electrical conditions of reflection interdigital transducer 2 change, and reflecting properties can also change.Therefore
The sound wave being reflected back is again converted to after radio wave is transmitted through antenna via input/output interdigital transducer 1, and radio frequency connects
It receives device and receives the feedback signal sent out by the antenna of surface acoustic wave sensor, be sent at computer or other signals
It manages unit and carries out signal processing.The information of the perceived amount in the external world and the identity identification information of surface acoustic wave sensor are included in
In feedback signal, the purpose of wireless and passive measurement is finally reached by the extraction to these information.
Embodiment 1
As shown in Figure 1, piezoelectric layer uses aluminium nitride film, input/output interdigital transducer 1 and reflection interdigital transducer 2
Using delay-line structure, electrode is aluminium electrode, and reflection interdigital transducer 2 is using double interdigital electrodes, electrode height and electrode width
The ratio between 0.3-0.15, air-sensitive film use SnO2Nano-crystal film collectively constitutes conductivity type gas with sensitive interdigital electrode
Body sensing arrangement, resistance regulation can change SnO by doping Sb2The resistivity of nano-crystal film.
In the present embodiment, general double interdigital electrodes are selected, suitable electrode depth-width ratio is set, finger can be effectively reduced
Between reflect, it is small using reflection coefficient when double interdigital electrode short circuits, and the characteristics of changing with external impedance realizes sensing measurement.Simultaneously
SnO is selected2Nano-crystal film can change SnO by doping Sn in this way as air-sensitive film2The resistivity of nano-crystal film is fitted
Answer different measurement demands.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should all include
Within protection scope of the present invention.
Claims (10)
1. a kind of gas sensor, which is characterized in that interdigital including substrate, piezoelectric layer, input/output interdigital transducer, reflection
Energy converter, sensitive interdigital electrode and air-sensitive film；Wherein:
The substrate is insulation material layer, for growing piezoelectric layer；The substrate is the SiO of growth on a si substrate2Insulating layer；
The piezoelectric layer is produced on insulation material layer, for the conversion of mechanical deformation and electric signal, to realize ultrasonic wave
With the conversion of radiofrequency signal；
The input/output interdigital transducer, reflection interdigital transducer and sensitive interdigital electrode are shape as finger cross-like
Metal pattern, for realizing acoustic-electric transducing；The input/output interdigital transducer, reflection interdigital transducer and sensitive interdigital electricity
Pole is sequentially produced in piezoelectric layer surface；Input/output interdigital transducer and reflection interdigital transducer parallel alignment, in order to super
Sonic transmissions coupling；
The air-sensitive film is deposited on sensitive interdigital electrode overlying regions, collectively forms sensing arrangement with sensitive interdigital electrode, uses
In probe gas；The input/output interdigital transducer is used for signal input and output, and one side converts electrical signals to ultrasound
Wave is sent to reflection interdigital transducer by piezoelectric layer；On the other hand, the ultrasonic wave that interdigital transducer is sent will be reflected to be converted to
Electric signal output；
The reflection interdigital transducer is used to reflect the ultrasonic wave inputted and returns to input/output interdigital transducer, at the same with sensing
Structure is connected, and receives the information that sensing arrangement transmits；
The sensing arrangement is the sensitive area of sensor, for perceiving gas；
When work, with the variation of under test gas concentration, the material property of air-sensitive film changes, and causes the resistance of sensing arrangement
Resistance causes the reflection coefficient for the reflection interdigital electrode being attached thereto to change, thus is reflected into that input/output is interdigital to change
The corresponding reflection peak of signal of energy device contains the information of extraneous perceived amount, to realize the perception and biography of gas information
It send.
2. gas sensor according to claim 1, which is characterized in that the piezoelectric layer can be including ZnO, AlN and
The high piezoelectric material of the Curie temperature of any one in GaN, is also possible to LiNbO3、LiTaO3, any one in lithium tetraborate
Monocrystalline thin layer；The input/output interdigital transducer, reflect interdigital transducer electrode material it is identical, select include aluminium, copper,
The metal material of any one in gold is produced on piezoelectric layer surface using the method for photoetching.
3. gas sensor according to claim 1, which is characterized in that the electrode that entire sensor is related to is designed to
Single finger-type structure with special depth-width ratio；Input/output interdigital transducer, the period for reflecting interdigital transducers electrodes and aperture
Optimized according to the principle of impedance matching and minimal energy loss；Input/output interdigital transducer and reflection interdigital transducer
Finger parameter it is identical, to obtain higher coupling efficiency.
4. gas sensor according to claim 1, which is characterized in that the input/output interdigital transducer and reflection
Interdigital transducer distance is arranged in 50-200 wave-length coverage.
5. gas sensor according to claim 1, which is characterized in that the sensitivity interdigital electrode and the interdigital transducing of reflection
Device distance is 5-15 times of input/output interdigital transducer and reflection interdigital transducer distance.
6. gas sensor according to claim 1, which is characterized in that the sensitivity interdigital electrode finger battle array and reflection are pitched
Finger transducer finger battle array is not parallel.
7. gas sensor according to claim 1, which is characterized in that the air-sensitive film includes zinc oxide, dioxy
Change the inorganic thin film to gas sensitization of any one in tin, or including the organic of any one in polyethylene glycol, polyurethane
Film；Its coverage area of air-sensitive film depends on its lower interdigital electrode size made.
8. gas sensor according to claim 1, which is characterized in that the input/output interdigital transducer is connected with
Antenna or conducting wire, for realizing signal transmitting and receiving mode wirelessly or non-wirelessly.
9. gas sensor according to claim 1, which is characterized in that the input/output interdigital transducer and reflection
Interdigital transducer is designed to resonator structure, i.e., is both provided with the interdigital transducing of reflection on the both sides of input/output interdigital transducer
Device makes surface acoustic wave form resonance between two reflection interdigital transducers, to further increase device Q value.
10. gas sensor according to claim 1, which is characterized in that the sensitivity interdigital electrode finger battle array and reflection
The angle preferred value of interdigital transducer finger battle array is 30-60 degree.
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| CN107543570B (en) * | 2017-08-22 | 2019-09-13 | 华中科技大学 | A wireless passive MEMS sensor based on X-type phononic crystal |
| EP3540422B1 (en) * | 2018-03-14 | 2024-01-03 | Sciosense B.V. | Monolithic gas sensor arrangement, manufacturing method and measurement method |
| JP7310145B2 (en) * | 2019-01-15 | 2023-07-19 | 富士電機株式会社 | sensor device |
| CN111864003B (en) * | 2019-04-30 | 2022-07-05 | 山东大学 | Photoelectric detector on lithium niobate planar waveguide and preparation method |
| CN112729595A (en) * | 2021-02-02 | 2021-04-30 | 上海航天电子有限公司 | Delay line type surface acoustic wave sensor and manufacturing method thereof |
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