CN103111410A - Novel ultrasonic wave sensor - Google Patents
Novel ultrasonic wave sensor Download PDFInfo
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- CN103111410A CN103111410A CN2013100294814A CN201310029481A CN103111410A CN 103111410 A CN103111410 A CN 103111410A CN 2013100294814 A CN2013100294814 A CN 2013100294814A CN 201310029481 A CN201310029481 A CN 201310029481A CN 103111410 A CN103111410 A CN 103111410A
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- 239000002184 metal Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 241000446313 Lamella Species 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 11
- 229920000742 Cotton Polymers 0.000 claims description 9
- 230000030279 gene silencing Effects 0.000 claims description 9
- 230000035945 sensitivity Effects 0.000 abstract description 9
- 238000007789 sealing Methods 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 description 14
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 241001465754 Metazoa Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002463 transducing effect Effects 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
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Abstract
The invention relates to a sensor, in particular to a novel ultrasonic wave sensor which comprises a hollow metal outer case. One end of the metal outer case is covered by a matching layer in a sealing mode. The inner side of the matching layer is provided with piezoelectric bimorphs in parallel in a pasted mode. The piezoelectric bimorphs in parallel are formed in the mode that the two opposite electrode faces of the two piezoelectric bimorphs are respectively pasted on two faces of a metal substrate, the other two electrode faces of the two piezoelectric bimorphs are electrically connected, and a common connecting end of the two piezoelectric bimorphs and the metal substrate are respectively connected with a connecting terminal. The novel ultrasonic wave sensor is simple in structure, high in sensitivity, and small in aftershock.
Description
Technical field
The present invention relates to a kind of sensor, particularly a kind of ultrasonic sensor.
Background technology
Ultrasonic sensor is the sensor that utilizes hyperacoustic characteristic to develop.Ultrasonic wave be a kind of vibration frequency higher than the mechanical wave of sound wave, generation of vibration is occured under the excitation of voltage by the transducing wafer, it has, and frequency is high, wavelength is short, the diffraction phenomenon is little, particularly good directionality, can become ray and the characteristics such as direction propagation.Ultrasonic wave is encountered impurity or interface and can be produced and significantly reflect to form reflection echo, encounters the live animal physical efficiency and produces Doppler effect.Therefore ultrasound examination is widely used in the aspects such as industry, national defence, biomedicine., must produce ultrasonic wave and receive ultrasonic wave as detection means with ultrasonic wave.The device of completing this function is exactly ultrasonic sensor, is called traditionally ultrasonic transducer, perhaps ultrasonic probe.Ultrasonic probe mainly is comprised of piezoelectric chip, both can launch ultrasonic wave, also can receive ultrasonic wave.
Two important performance indexes of ultrasonic sensor are sensitivity and aftershock.Sensitivity is the variable quantity of sensor output signal in the steady operation situation and the ratio of input variable quantity.Sensitivity can be regarded as multiplication factor, and multiple is larger, and sensitivity is higher.Improve sensitivity, can increase the precision of measurement.Aftershock refer to sensor after receiving a pulse signal from starting working the final out-of-work time, aftershock can not start the reception echo-signal before disappearing, the reception that its can clutter signal, so it can determine the effect that low coverage is measured.
Most of piezoelectric-type ultrasonic wave sensor is mainly to be piezoelectric monocrystal chip ultrasonic sensor in the market, though this kind sensor is made simply, after single-chip was sensed sound wave, amplitude was little, therefore sensitivity is lower; Simultaneously, in order to satisfy the requirement of electric capacity and frequency, single-chip is little and thin, and quality is light, so aftershock is larger.
Summary of the invention
The technical issues that need to address of the present invention are to provide a kind of ultrasonic sensor of high sensitivity low aftershock.
For solving above-mentioned technical problem, Novel ultrasonic wave sensor of the present invention comprises the cylindrical metal shell of hollow, the one end matching layer capping of described metal shell, described matching layer inboard is bonded with the parallel piezoelectric twin lamella, described parallel piezoelectric twin lamella is for being bonded in two opposite electrode faces of two piezoelectric chips respectively the metal substrate two sides, and other two two electrode surfaces of described two piezoelectric chips are electrically connected to; The public connecting end of described two piezoelectric chips and metal substrate are connected with respectively binding post.
Fill quieter material between described parallel piezoelectric twin lamella and metal shell.
Described quieter material is silencing cotton.
Be fixed with screen layer in the metal shell in the described quieter material outside, described binding post stretches out from quieter material and screen layer.
After adopting said structure, piezoelectric bimorph is equivalent to Capacitance parallel connection, and electric capacity is large like this, and signal output voltage is large; And piezoelectric bimorph vibrates to same direction, is equivalent to the stack of two piezoelectric monocrystal sheet vibrations, and is therefore amplitude is large, highly sensitive.Simultaneously, the quality of piezoelectric bimorph is higher than single-chip, and this point has been just from having reduced in essence the aftershock of sensor, but not mainly relies on the bonding aftershock that stops piezoelectric vibrator of quieter material and glue.Ultrasonic sensor of the present invention is simple in structure, and sensitivity is higher, aftershock is less.
Description of drawings
The present invention is further detailed explanation below in conjunction with the drawings and specific embodiments.
Fig. 1 is the cutaway view of Novel ultrasonic wave sensor of the present invention.
Fig. 2 is the structural representation of parallel piezoelectric twin lamella of the present invention.
Fig. 3 is the principle schematic of parallel piezoelectric twin lamella of the present invention.
In figure: 1 is metal shell, and 2 is matching layer, and 3 is piezoelectric bimorph, and 4 is the first binding post, and 5 is the second binding post, and 6 is silencing cotton, and 7 is screen layer
201 is metal substrate, and 202 is the first piezoelectric ceramic piece, and 203 is the second pressure potsherd, and 204 is litzendraht wire
The specific embodiment
As shown in Figure 1, Novel ultrasonic wave sensor of the present invention comprises the metal shell 1 of hollow, and an end of described metal shell 1 is with matching layer 2 cappings, and described matching layer 2 inboards are bonded with parallel piezoelectric twin lamella 3.Matching layer 2 directly uses glue bonding with piezoelectric patches, and the size of matching layer, density, thermal coefficient of expansion, elastic modelling quantity and Poisson's ratio will be mated mutually with piezoelectric patches, and then determines the resonant frequency of ultrasonic sensor.
As shown in Figures 2 and 3, described parallel piezoelectric twin lamella 3 is bonded in respectively the metal substrate two sides for two opposite electrode faces with two piezoelectric chips, and namely the upper surface of the negative pole face of the first piezoelectric ceramic piece 202 and metal substrate 201 is bonding; The positive pole-face of the second piezoelectric ceramic piece 203 and the lower surface bonds of metal substrate 201.The upper surface that can certainly be the positive pole-face of the first piezoelectric ceramic piece 202 and metal substrate 201 is bonding; The negative pole face of the second piezoelectric ceramic piece 203 and the lower surface bonds of metal substrate 201; But the first piezoelectric ceramic piece 202 and the second piezoelectric ceramic piece 203 must be the upper and lower surfaces that the opposite electrode face is bonded in respectively metal substrate 201, like this can be so that the first piezoelectric ceramic piece 202 is consistent with the direction of vibration of the second piezoelectric ceramic piece 203.The direction of vibration of such two piezoelectric ceramic pieces is consistent, is equivalent to the stack of two piezoelectric monocrystal sheet vibrations, and is so amplitude is large, highly sensitive; Simultaneously, the quality of piezoelectric bimorph is higher than single-chip, and this point is from having reduced in essence the aftershock of sensor.
As depicted in figs. 1 and 2, other two two electrode surfaces of described two piezoelectric chips are electrically connected to, and namely the positive pole-face of the first piezoelectric ceramic piece 202 is electrically connected to by litzendraht wire 204 with the second piezoelectric ceramic piece 203 negative pole faces; The public connecting end of described two piezoelectric chips (common port that namely is electrically connected to litzendraht wire) is connected with the second binding post 5, and described metal substrate 201 is connected with the first binding post 4.Like this, piezoelectric bimorph 3 is equivalent to be connected in parallel between the first binding post 4 and the second binding post 5, and electric capacity is large like this, and signal output voltage is large.
Fill quieter material between described parallel piezoelectric twin lamella and metal shell.Described quieter material is silencing cotton 6, and a main damping sound absorption of silencing cotton 6 after the work of piezoelectric ceramic piece generation high-frequency vibration, can be sent ultrasonic wave to radiating surface (metal shell) direction, realizes the function of detection range.But, also can produce ultrasonic signal to reverse (silencing cotton) direction simultaneously, in order not disturb and affect the ultrasonic wave normal operation of radiating surface direction, must eliminate this part ultrasonic wave.Silencing cotton 6 will radiation-absorbing face reverse side ultrasonic wave, guarantee that the normal range finding of sensor is not disturbed.
Be fixed with screen layer 7 in the metal shell in described silencing cotton 6 outsides, described the first binding post 4 and the second binding post 5 stretch out from silencing cotton 6 and screen layer 7, give the power supply of parallel piezoelectric twin lamella by the first binding post 4 and the second binding post 5.
Certainly, parallel piezoelectric twin lamella of the present invention also can adopt the mode of plural piezoelectric ceramic piece parallel connection, within such conversion all drops on protection scope of the present invention.Although more than described the specific embodiment of the present invention, those of skill in the art in the art should be appreciated that these only illustrate, and can make various changes or modifications to these embodiments, and not deviate from principle of the present invention and essence.Scope of the present invention is limited by appended claims.
Claims (4)
1. Novel ultrasonic wave sensor, the metal shell that comprises hollow, the one end matching layer capping of described metal shell, it is characterized in that: described matching layer inboard is bonded with the parallel piezoelectric twin lamella, described parallel piezoelectric twin lamella is for being bonded in two opposite electrode faces of two piezoelectric chips respectively the metal substrate two sides, and other two two electrode surfaces of described two piezoelectric chips are electrically connected to; The public connecting end of described two piezoelectric chips and metal substrate are connected with respectively binding post.
2. according to Novel ultrasonic wave sensor claimed in claim 1, it is characterized in that: fill quieter material between described parallel piezoelectric twin lamella and metal shell.
3. according to Novel ultrasonic wave sensor claimed in claim 2, it is characterized in that: described quieter material is silencing cotton.
4. according to the described Novel ultrasonic wave sensor of claim 2 or 3, it is characterized in that: be fixed with screen layer in the metal shell outside described quieter material, described binding post stretches out from quieter material and screen layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013100294814A CN103111410A (en) | 2013-01-25 | 2013-01-25 | Novel ultrasonic wave sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013100294814A CN103111410A (en) | 2013-01-25 | 2013-01-25 | Novel ultrasonic wave sensor |
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| CN2013100294814A Pending CN103111410A (en) | 2013-01-25 | 2013-01-25 | Novel ultrasonic wave sensor |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104197970A (en) * | 2014-07-23 | 2014-12-10 | 常州波速传感器有限公司 | Novel low-cost high-frequency ultrasonic sensor |
| CN104681711A (en) * | 2014-11-24 | 2015-06-03 | 麦克思智慧资本股份有限公司 | Ultrasonic sensor and manufacturing method thereof |
| CN105628060A (en) * | 2016-03-08 | 2016-06-01 | 汉得利（常州）电子股份有限公司 | Piezoelectric ultrasonic transducer unit and applications thereof |
| CN105973985A (en) * | 2016-06-24 | 2016-09-28 | 中冶建筑研究总院有限公司 | Ultrasonic probe for nonmetallic material defect detection |
| CN106872568A (en) * | 2017-02-24 | 2017-06-20 | 常州波速传感器有限公司 | A kind of oxygenerator oxygen concentration detection sensor |
| CN107091976A (en) * | 2017-05-23 | 2017-08-25 | 北京兴泰学成仪器有限公司 | Ultrasonic sensor |
| CN113050100A (en) * | 2021-03-12 | 2021-06-29 | 汉得利（常州）电子股份有限公司 | Automobile low-speed running anti-collision ultrasonic sensor |
| TWI816239B (en) * | 2021-11-26 | 2023-09-21 | 詠業科技股份有限公司 | Ultrasonic transducer |
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| CN1159573A (en) * | 1996-03-07 | 1997-09-17 | 三星电子株式会社 | Vibration detection sensor |
| CN2720441Y (en) * | 2004-07-09 | 2005-08-24 | 吴忠仪表股份有限公司 | Supersonic air detector |
| US20070138914A1 (en) * | 2005-12-15 | 2007-06-21 | Alps Electric Co., Ltd. | Wiring structure of vibrator, and piezoelectric pump |
| CN102075837A (en) * | 2010-12-22 | 2011-05-25 | 汉得利（常州）电子有限公司 | High-frequency high-sensitivity ultrasonic sensor |
| CN102288782A (en) * | 2011-07-19 | 2011-12-21 | 江苏物联网研究发展中心 | High-precision ultrasonic transducer |
| US20120013222A1 (en) * | 2010-01-19 | 2012-01-19 | Thomas Herzog | Ultrasonic Sensor for Detecting and/or Scanning Objects |
| CN203061411U (en) * | 2013-01-25 | 2013-07-17 | 常州波速传感器有限公司 | Novel ultrasonic sensor |
-
2013
- 2013-01-25 CN CN2013100294814A patent/CN103111410A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1159573A (en) * | 1996-03-07 | 1997-09-17 | 三星电子株式会社 | Vibration detection sensor |
| CN2720441Y (en) * | 2004-07-09 | 2005-08-24 | 吴忠仪表股份有限公司 | Supersonic air detector |
| US20070138914A1 (en) * | 2005-12-15 | 2007-06-21 | Alps Electric Co., Ltd. | Wiring structure of vibrator, and piezoelectric pump |
| US20120013222A1 (en) * | 2010-01-19 | 2012-01-19 | Thomas Herzog | Ultrasonic Sensor for Detecting and/or Scanning Objects |
| CN102075837A (en) * | 2010-12-22 | 2011-05-25 | 汉得利（常州）电子有限公司 | High-frequency high-sensitivity ultrasonic sensor |
| CN102288782A (en) * | 2011-07-19 | 2011-12-21 | 江苏物联网研究发展中心 | High-precision ultrasonic transducer |
| CN203061411U (en) * | 2013-01-25 | 2013-07-17 | 常州波速传感器有限公司 | Novel ultrasonic sensor |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104197970A (en) * | 2014-07-23 | 2014-12-10 | 常州波速传感器有限公司 | Novel low-cost high-frequency ultrasonic sensor |
| CN104681711A (en) * | 2014-11-24 | 2015-06-03 | 麦克思智慧资本股份有限公司 | Ultrasonic sensor and manufacturing method thereof |
| CN105628060A (en) * | 2016-03-08 | 2016-06-01 | 汉得利（常州）电子股份有限公司 | Piezoelectric ultrasonic transducer unit and applications thereof |
| CN105973985A (en) * | 2016-06-24 | 2016-09-28 | 中冶建筑研究总院有限公司 | Ultrasonic probe for nonmetallic material defect detection |
| CN106872568A (en) * | 2017-02-24 | 2017-06-20 | 常州波速传感器有限公司 | A kind of oxygenerator oxygen concentration detection sensor |
| CN107091976A (en) * | 2017-05-23 | 2017-08-25 | 北京兴泰学成仪器有限公司 | Ultrasonic sensor |
| CN107091976B (en) * | 2017-05-23 | 2024-03-01 | 北京兴泰学成仪器有限公司 | Ultrasonic sensor |
| CN113050100A (en) * | 2021-03-12 | 2021-06-29 | 汉得利（常州）电子股份有限公司 | Automobile low-speed running anti-collision ultrasonic sensor |
| TWI816239B (en) * | 2021-11-26 | 2023-09-21 | 詠業科技股份有限公司 | Ultrasonic transducer |
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Application publication date: 20130522 |