CN106784320A - Based on CH3NH3PbI3Reflective enhancing N-type hetero-junctions HEMT of substrate of material and preparation method thereof - Google Patents

Abstract

The invention relates to a substrate light reflection enhanced N-type heterojunction HEMT based on CH ₃ NH ₃ PbI ₃ material and a preparation method thereof. The method includes: selecting a sapphire substrate; forming a light-reflecting layer on the lower surface of the substrate; making source-drain electrodes on the upper surface of the substrate; forming an electron transport layer _on the upper surface _of the substrate _; A light-absorbing layer of the material; a gate electrode is fabricated on the surface of the light-absorbing layer to finally form an N-type heterojunction HEMT. The present invention uses CH ₃ NH ₃ PbI ₃ to provide a large number of electrons to the channel, and silver-plates the lower surface of the substrate to form a reflection-enhanced HEMT, which has high mobility, fast switching speed, enhanced light absorption and light utilization, and photogenerated current carrying. The number of electrons increases and the photoelectric conversion efficiency is high. In addition, the PCBM material is added to the light absorbing layer to form a heterojunction, which can improve the quality of the light absorbing layer film by filling holes and vacancies, resulting in larger grains and fewer grain boundaries, absorbing more The light generates photogenerated carriers and enhances the device performance.

Description

Substrate reflection-enhanced N-type heterojunction HEMT based on CH3NH3PbI3 material and its preparation method

technical field

The invention belongs to the technical field of integrated circuits, and in particular relates to a CH ₃ NH ₃ PbI ₃ material-based substrate light reflection enhanced N-type heterojunction HEMT and a preparation method thereof.

Background technique

With the vigorous development of electronic technology, semiconductor integrated circuits play an increasingly important role in social development and national economy. Among them, the market demand for optoelectronic high-speed devices is increasing day by day, and higher and more detailed requirements are constantly put forward for the performance of the devices. In order to seek a breakthrough, no matter from the aspects of technology, material or structure, the research has been uninterrupted. In recent years, with the rise of visible light wireless communication technology and circuit coupling technology, the market has put forward new requirements for optoelectronic high electron mobility transistors (High Electron Mobility Transistor, HEMT) in the visible light band.

The emergence of organic/inorganic perovskite (CH ₃ NH ₃ PbI ₃ ) has brought a new perspective to the research. The orderly combination of organic and inorganic groups in organic/inorganic perovskites leads to long-range ordered crystal structures that combine the advantages of both organic and inorganic materials. The high mobility of the inorganic component endows the hybrid perovskite with good electrical properties; the self-assembly and film-forming properties of the organic component make the preparation process of the hybrid perovskite film simple and low-cost, and can also be prepared at room temperature conduct. The high light absorption coefficient of hybrid perovskite itself is also the capital that hybrid perovskite can be used in optoelectronic materials.

However, the current CH ₃ NH ₃ PbI ₃ material has not been maturely used in HMET devices, and how to further improve the photoelectric conversion efficiency is still an urgent problem to be solved.

Contents of the invention

In order to solve the above-mentioned problems in the prior art, the present invention provides a CH ₃ NH ₃ PbI ₃ material-based substrate light reflection enhanced N-type heterojunction HEMT and a preparation method thereof.

An embodiment of the present invention provides a method for preparing a CH ₃ NH ₃ PbI ₃ material-based substrate reflection-enhanced N-type heterojunction HEMT, including:

Select the sapphire substrate;

forming a reflective layer on the lower surface of the sapphire substrate;

Making source and drain electrodes on the upper surface of the sapphire substrate;

forming an electron transport layer on the source-drain electrodes and the upper surface of the sapphire substrate not covered by the source-drain electrodes;

forming a light absorbing layer comprising CH ₃ NH ₃ PbI ₃ material on the surface of the electron transport layer;

A gate electrode is formed on the surface of the light absorbing layer to finally form the N-type heterojunction HEMT.

In one embodiment of the present invention, a reflective layer is formed on the lower surface of the sapphire substrate, comprising:

Using Ag material as the target material, Ar as the sputtering gas into the sputtering chamber, under the conditions of vacuum degree of 6×10 ^-4 ~ 1.3×10 ^-3 Pa, sputtering power of 20 ~ 100W, using magnetron Sputtering process, sputtering Ag material on the lower surface of the sapphire substrate to form the reflective layer.

In one embodiment of the present invention, making source and drain electrodes on the upper surface of the sapphire substrate includes:

The first physical mask is used, Au material is used as the target material, Ar is used as the sputtering gas to pass into the sputtering chamber, the vacuum degree is 6×10 ^-4 ~ 1.3×10 ^-3 Pa, and the sputtering power is 20~ Under the condition of 100W, Au material is sputtered on the upper surface of the sapphire substrate to form the source and drain electrodes.

In one embodiment of the present invention, an electron transport layer is formed on the source-drain electrodes and the upper surface of the sapphire substrate not covered by the source-drain electrodes, including:

Using TiO ₂ material as the target material, Ar and O ₂ as the sputtering gas into the sputtering chamber, under the conditions of vacuum degree of 1.3×10 ^-3 ~ 3×10 ^-3 Pa and sputtering power of 60 ~ 80W , sputtering TiO ₂ material on the upper surface of the entire substrate including the source and drain electrodes to form the source and the electron transport layer.

In one embodiment of the present invention, a light absorbing layer comprising CH ₃ NH ₃ PbI ₃ material is formed on the surface of the electron transport layer, including:

Using a single spin-coating process, spin-coat a PCBM material with a mass concentration of 8 mg/ml on the surface of the electron transport layer, and form an active layer after annealing;

Spin-coating CH ₃ NH ₃ PbI ₃ material on the surface of the active layer by using a single spin-coating process;

Using an annealing process, the CH ₃ NH ₃ PbI ₃ material is annealed to form the light absorbing layer.

In one embodiment of the present invention, a light absorbing layer comprising CH ₃ NH ₃ PbI ₃ material is formed on the surface of the electron transport layer, including:

Using a single spin coating process, spin coating a mixed solution of CH ₃ NH ₃ PbI ₃ and PCBM on the surface of the electron transport layer to form a CH ₃ NH ₃ PbI ₃ /PCBM material;

Using an annealing process, the CH ₃ NH ₃ PbI ₃ /PCBM material is annealed to form the light absorbing layer.

In one embodiment of the present invention, a mixed solution of CH ₃ NH ₃ PbI ₃ and PCBM is spin-coated on the surface of the electron transport layer to form a CH ₃ NH ₃ PbI ₃ /PCBM material, including:

Add PbI ₂ material and CH ₃ NH ₃ I material to DMSO:GBL solution successively to form a mixed solution of PbI ₂ and CH ₃ NH ₃ I;

heating and stirring the mixed solution of PbI ₂ and CH ₃ NH ₃ I, and performing annealing treatment to form a CH ₃ NH ₃ PbI ₃ solution;

The CH ₃ NH ₃ PbI ₃ solution and the PCBM solution are mixed and then spin-coated on the surface of the electron transport layer to form the CH ₃ NH ₃ PbI ₃ /PCBM material.

In one embodiment of the present invention, fabricating a gate electrode on the surface of the light absorbing layer includes:

Use the second mask plate, use Au material as the target material, and use Ar gas as the sputtering gas to pass into the sputtering chamber. The vacuum degree is 6×10 ^-4 ~ 1.3×10 ^-3 Pa, and the sputtering power is 20~ Under the condition of 100W, Au material is sputtered on the surface of the light absorbing layer to form the gate electrode.

Another embodiment of the present invention provides an N-type heterojunction HEMT based on CH ₃ NH ₃ PbI ₃ material with enhanced light reflection of the substrate, wherein the N-type heterojunction HEMT is composed of any one of the above-mentioned embodiments Prepared by the method described above.

The N-type heterojunction HEMT provided by the embodiment of the present invention has the following advantages:

1. Since the transistor of the present invention uses a reflective layer on the back of the substrate, the reflected light is also utilized, which increases the utilization rate of light, absorbs more light to generate photogenerated carriers, and enhances device performance.

2. Since the transistor of the present invention forms a heterojunction by adding PCBM material to the light-absorbing layer, the quality of the light-absorbing layer film can be improved by filling holes and vacancies, thereby producing larger crystal grains and fewer crystal grains. Boundary, absorb more light to generate photogenerated carriers, and enhance device performance. Alternatively, the PCBM material is added between the light absorbing layer and the electron transport layer, which can improve the quality of the light absorbing layer film and enhance device performance through the interface defects between the passivation layers.

3. Since the electron transport layer used in the transistor of the present invention transports electrons and blocks holes, more electrons can be transported and the performance of the device can be enhanced.

4. The transistor of the present invention uses CH ₃ NH ₃ PbI ₃ to provide a large amount of electrons to the channel to form a substrate silver-plated reflection-enhanced HEMT high electron mobility transistor, which has high mobility, fast switching speed, light absorption and light absorption. The utilization rate is enhanced, the photogenerated carriers are increased, the transmission characteristics are enhanced, and the photoelectric conversion efficiency is large.

Description of drawings

Fig. 1 is a schematic cross-sectional view of an N-type heterojunction HEMT based on CH ₃ NH ₃ PbI ₃ materials provided by an embodiment of the present invention with enhanced substrate light reflection;

Fig. 2 is a schematic top view of an N-type heterojunction HEMT based on CH ₃ NH ₃ PbI ₃ material provided by an embodiment of the present invention with enhanced substrate light reflection;

3 is a schematic cross-sectional view of another N-type heterojunction HEMT based on CH ₃ NH ₃ PbI ₃ materials provided by an embodiment of the present invention with enhanced substrate light reflection;

Fig. 4 is a schematic flowchart of a preparation method of an N-type heterojunction HEMT based on a CH ₃ NH ₃ PbI ₃ material provided by an embodiment of the present invention with enhanced reflection of the substrate;

5a-5f are schematic diagrams of a method for preparing an N-type heterojunction HEMT based on CH ₃ NH ₃ PbI ₃ materials provided by an embodiment of the present invention with enhanced light reflection on the substrate;

6a-6g are schematic diagrams of another method for preparing an N-type heterojunction HEMT based on CH ₃ NH ₃ PbI ₃ materials provided by an embodiment of the present invention with enhanced light reflection on the substrate;

FIG. 7 is a schematic structural diagram of a first physical mask provided by an embodiment of the present invention; and

FIG. 8 is a schematic structural diagram of a second physical mask provided by an embodiment of the present invention.

detailed description

The present invention will be further described in detail below in conjunction with specific examples, but the embodiments of the present invention are not limited thereto.

Embodiment one

Please refer to Fig. 1 and Fig. 2, Fig. 1 is a schematic cross-sectional view of an N-type heterojunction HEMT based on CH ₃ NH ₃ PbI ₃ materials provided by an embodiment of the present invention with enhanced reflection of substrate; Fig. 2 is an embodiment of the present invention Provided is a schematic top view of an N-type heterojunction HEMT based on CH ₃ NH ₃ PbI ₃ material with enhanced light reflection of the substrate. The N-type heterojunction HEMT of the present invention comprises: a sapphire substrate 1 , a light-reflecting layer 2 , a source-drain electrode 3 , an electron-transporting layer 4 , a light-absorbing layer 5 , and a gate electrode 6 . Among them, the sapphire substrate 1, the reflective layer 2, the source and drain electrodes 3, the electron transport layer 4, the light absorbing layer 5, and the gate electrode 6 form a multilayer structure in sequence.

Wherein, the reflective layer 2 can be made of silver material; the source and drain electrodes 3 can be made of gold material; the electron transport layer 4 can be made of TiO2 material; the light absorption layer 5 can be made of CH ₃ NH ₃ PbI ₃ /PCBM material; 6 can adopt gold material.

Optionally, please refer to FIG. 3 . FIG. 3 is a schematic cross-sectional view of another N-type heterojunction HEMT based on CH ₃ NH ₃ PbI ₃ material with enhanced light reflection of the substrate provided by an embodiment of the present invention. The N-type heterojunction HMET may also include an active layer 7, and the active layer 7 may be a PCBM material. In this case, the light absorbing layer may simply use CH ₃ NH ₃ PbI ₃ material.

The PCBM material is a fullerene derivative with the molecular formula [6,6]-phenyl-C61-butyric acidmethyl ester. Due to its good solubility, high electron mobility, and good phase separation with common polymer donor materials, it has become the standard electron acceptor for organic solar cells. The present invention utilizes this characteristic, and it is cleverly used in the HMET device shown in Figure 1 or Figure 3, as an active layer with a buffer property, it can improve the quality of the light-absorbing layer film by filling holes and vacancies, As a result, larger grains and fewer grain boundaries are produced, more light is absorbed to generate photogenerated carriers, and device performance is enhanced.

It should be noted that the CH ₃ NH ₃ PbI ₃ material is very suitable for photodetection in the visible light range due to its high responsivity in the near-infrared and visible light ranges. It has high photoelectric sensitivity, high electron mobility and Good electrical conductivity is an ideal material for HEMT.

Please refer to FIG. 4 . FIG. 4 is a schematic flowchart of a method for fabricating an N-type heterojunction HEMT based on a CH ₃ NH ₃ PbI ₃ material with enhanced light reflection on a substrate provided by an embodiment of the present invention. The method comprises the steps of:

Step 1, select the sapphire substrate;

Step 2, forming a reflective layer on the lower surface of the sapphire substrate;

Step 3, making source and drain electrodes on the upper surface of the sapphire substrate;

Step 4, forming an electron transport layer on the source-drain electrodes and the upper surface of the sapphire substrate not covered by the source-drain electrodes;

Step 5, forming a light absorbing layer comprising CH ₃ NH ₃ PbI ₃ on the surface of the electron transport layer;

Step 6, making a gate electrode on the surface of the light absorbing layer to finally form the N-type heterojunction HEMT.

Among them, step 2 may include:

Using Ag material as the target material, Ar as the sputtering gas into the sputtering chamber, under the conditions of vacuum degree of 6×10 ^-4 ~ 1.3×10 ^-3 Pa, sputtering power of 20 ~ 100W, using magnetron Sputtering process, sputtering Ag material on the lower surface of the sapphire substrate to form the reflective layer.

Step 3 can include:

The first physical mask is used, Au material is used as the target material, Ar is used as the sputtering gas to pass into the sputtering chamber, the vacuum degree is 6×10 ^-4 ~ 1.3×10 ^-3 Pa, and the sputtering power is 20~ Under the condition of 100W, Au material is sputtered on the upper surface of the sapphire substrate to form the source and drain electrodes.

Step 4 can include:

Using TiO ₂ material as the target material, Ar and O ₂ as the sputtering gas into the sputtering chamber, under the conditions of vacuum degree of 1.3×10 ^-3 ~ 3×10 ^-3 Pa and sputtering power of 60 ~ 80W , sputtering TiO ₂ material on the upper surface of the entire substrate including the source and drain electrodes to form the source and the electron transport layer.

Step 5 can include:

Step 5-11, using a single spin coating process, spin coating a PCBM material with a mass concentration of 8 mg/ml on the surface of the electron transport layer, and forming an active layer after annealing;

Step 5-12, using a single spin-coating process to spin-coat CH ₃ NH ₃ PbI ₃ material on the surface of the active layer;

Step 5-13, using an annealing process to anneal the CH ₃ NH ₃ PbI ₃ material to form the light absorbing layer.

Step 5 can also include:

Step 5-21, using a single spin coating process, spin coating a mixed solution of CH ₃ NH ₃ PbI ₃ and PCBM on the surface of the electron transport layer to form a CH ₃ NH ₃ PbI ₃ /PCBM material;

Step 5-22, using an annealing process to anneal the CH ₃ NH ₃ PbI ₃ /PCBM material to form the light absorption layer.

Wherein, step 5-21 may include:

Step 5-211, adding PbI ₂ material and CH ₃ NH ₃ I material to DMSO:GBL solution successively to form a mixed solution of PbI ₂ and CH ₃ NH ₃ I;

Step 5-212, heating and stirring the mixed solution of PbI ₂ and CH ₃ NH ₃ I, and performing annealing treatment to form a CH ₃ NH ₃ PbI ₃ solution;

Step 5-213, mixing the CH ₃ NH ₃ PbI ₃ solution and the PCBM solution, and then spin-coating to form the CH ₃ NH ₃ PbI ₃ /PCBM material on the surface of the electron transport layer.

Step 6 can include:

Use the second mask plate, use Au material as the target material, and use Ar gas as the sputtering gas to pass into the sputtering chamber. The vacuum degree is 6×10 ^-4 ~ 1.3×10 ^-3 Pa, and the sputtering power is 20~ Under the condition of 100W, Au material is sputtered on the surface of the light absorbing layer to form the gate electrode.

It should be emphasized that the formation of the reflective layer is not limited to the execution steps in the above-mentioned embodiments, and it can be prepared after the processing technology on the upper surface of the sapphire substrate is completed. Therefore, the preparation of the reflective layer in this embodiment The sequence is an example only and is a limitation.

In this embodiment, CH ₃ NH ₃ PbI ₃ is used to provide a large amount of electrons to the channel, and the lower surface of the substrate is plated with silver to form a reflection-enhanced HEMT, which has high mobility, fast switching speed, enhanced light absorption and light utilization, and light generation. The carrier increases, the transmission characteristics are enhanced, and the photoelectric conversion efficiency is large.

In addition, the PCBM material is added to the light absorbing layer to form a heterojunction, which can improve the quality of the light absorbing layer film by filling holes and vacancies, resulting in larger grains and fewer grain boundaries, absorbing more The light generates photogenerated carriers and enhances the device performance.

Embodiment three

Please refer to Figure 5a-Figure 5f and Figure 7 and Figure 8 together, Figure 5a-Figure 5f is an N-type heterojunction HEMT based on CH ₃ NH ₃ PbI ₃ material provided by an embodiment of the present invention with enhanced light reflection FIG. 7 is a schematic structural diagram of a first physical mask provided by an embodiment of the present invention; and FIG. 8 is a schematic structural diagram of a second physical mask provided by an embodiment of the present invention. In this embodiment, on the basis of the above-mentioned embodiments, the preparation method of the N-type heterojunction HEMT based on the CH ₃ NH ₃ PbI ₃ material of the present invention with enhanced substrate light reflection is described in detail as follows:

Step 1: Referring to FIG. 5a, prepare a substrate of sapphire Al ₂ O ₃ with a thickness of 200 μm-600 μm.

The reason for choosing sapphire Al ₂ O ₃ as the substrate: due to its low price and good insulation performance, it can effectively prevent the vertical leakage of the HEMT high electron mobility transistor.

Step 2: Please refer to FIG. 5 b , magnetron sputtering the silver material of the grid electrode on the back of the sapphire substrate to form a reflective layer.

The magnetron sputtering process is used to obtain the silver material of the magnetron sputtering grid electrode on the back of the substrate in step 1. The sputtering target material is silver with a mass ratio of purity >99.99%, and Ar with a mass percentage purity of 99.999% is used as the sputtering gas. Before sputtering, clean the cavity of the magnetron sputtering equipment with high-purity argon for 5 minutes, and then vacuumize it. Under the conditions of a vacuum degree of 6×10 ^-4 ~ 1.3×10 ^-3 Pa, an argon gas flow rate of 20-30cm3/sec, a target base distance of 10cm and a working power of 20W-100W, a silver mirror with a reflective layer is prepared. The electrode thickness is 100nm-300nm.

The reflective layer can be replaced by metals such as Al\Cu.

Step 3: Please refer to FIG. 5 c and FIG. 7 , using the first physical mask to magnetron sputter the gold source and drain electrodes on the sapphire substrate.

The sputtering target is made of gold with a mass ratio of purity >99.99%, and Ar with a mass percentage purity of 99.999% is used as the sputtering gas to pass into the sputtering chamber. Rinse for 5 minutes, then vacuum. Under the conditions of vacuum degree of 6×10 ^-4 ~ 1.3×10 ^-3 Pa, argon gas flow rate of 20-30cm3/sec, target base distance of 10cm and working power of 20W-100W, the source and drain electrode gold was prepared. The electrode thickness is 100nm-300nm.

The source and drain electrodes can be replaced by metals such as Al\Ti\Ni\Ag\Pt. Among them, Au\Ag\Pt has stable chemical properties; Al\Ti\Ni has low cost.

Step 4: Referring to FIG. 5d , on the source-drain electrodes prepared in step 3 and the uncovered substrate, magnetron sputtering or atomic layer deposition is used to deposit TiO ₂ material for the electron transport layer.

The target used in the magnetron sputtering process is a TiO ₂ target with a purity mass percentage >99.99%. The target diameter is 50mm and the thickness is 1.5-3mm. Clean for 5 minutes, then vacuumize, the vacuum degree is 1.3×10 ^-3 ~ 3×10 ^-3 Pa, then pass in argon and oxygen in sequence, and control the volume ratio of argon and oxygen to 9:1 by adjusting the flow rate, the total The pressure is kept at 2.0Pa, the sputtering power is 60-80W, and after the growth is completed, it is annealed at 70°C to 150°C to prepare a TiO ₂ electron transport layer on the source and drain electrodes and the uncovered substrate. The layer thickness is 50-200 nm.

Step 5: Please refer to FIG. 5e, the material on the electron transport layer is prepared by a single spin coating method to prepare a light absorbing layer.

Spin-coat the CH ₃ NH ₃ PbI ₃ light-absorbing layer on the electron transport layer obtained in step 4 by a single spin coating method, add 654 mg of PbI ₂ and 217 mg of CH ₃ NH ₃ I into DMSO:GBL successively to obtain PbI ₂ and CH ₃ NH ₃ I mixed solution; Stir the mixed solution of PbI ₂ and CH ₃ NH ₃ I at 80 degrees Celsius for two hours to obtain a stirred solution; leave the stirred solution at 80 degrees Celsius for 1 hour to obtain CH ₃ NH ₃ PbI ₃ solution; and according to the ratio of CH ₃ NH ₃ PbI ₃ :PCBM=100:1, the solution is added dropwise on the TiO ₂ film obtained in step 4, and annealed at 100 degrees Celsius for 20 minutes to form CH ₃ NH ₃ PbI ₃ /PCBM light absorbing layer, the thickness of the light absorbing layer is 200-300nm.

Step 6: Referring to FIG. 5f and FIG. 8 , use the second physical mask to magnetron sputter the gate electrode gold material on the light absorbing layer CH ₃ NH ₃ PbI ₃ /PCBM.

Using the magnetron sputtering process to magnetron sputter gate electrode gold material on the light absorbing layer CH ₃ NH ₃ PbI ₃ /PCBM obtained in step 5, the sputtering target material is selected from gold with mass ratio purity>99.99%, and the purity in mass percentage is 99.999% Ar is passed into the sputtering chamber as a sputtering gas. Before sputtering, the chamber of the magnetron sputtering equipment is cleaned with high-purity argon for 5 minutes, and then vacuumized. Under the conditions of a vacuum degree of 6×10 ^-4 -1.3×10 ^-3 Pa, an argon gas flow rate of 20-30 cm ³ /sec, a target base distance of 10 cm, and a working power of 20W-100W, the gate electrode gold was prepared. The electrode thickness is 100nm-300nm.

Embodiment four

Please see Figures 6a-6g, together with Figures 7 and 8. 6a-6g are schematic diagrams of another method for fabricating an N-type heterojunction HEMT based on a CH ₃ NH ₃ PbI ₃ material with enhanced light reflection on a substrate provided by an embodiment of the present invention. The method can include:

Step 1: Referring to FIG. 6a, prepare a substrate of sapphire Al ₂ O ₃ with a thickness of 200 μm-600 μm.

The reason for choosing sapphire Al ₂ O ₃ as the substrate: due to its low price and good insulation performance, it can effectively prevent the vertical leakage of the HEMT high electron mobility transistor.

Step 2: Please refer to FIG. 6b , magnetron sputtering the silver material of the gate electrode on the back of the sapphire substrate to form a reflective layer.

The magnetron sputtering process is used to obtain the silver material of the magnetron sputtering grid electrode on the back of the substrate in step 1. The sputtering target material is silver with a mass ratio of purity >99.99%, and Ar with a mass percentage purity of 99.999% is used as the sputtering gas. Before sputtering, clean the cavity of the magnetron sputtering equipment with high-purity argon for 5 minutes, and then vacuumize it. Under the conditions of a vacuum degree of 6×10 ^-4 ~ 1.3×10 ^-3 Pa, an argon gas flow rate of 20-30cm3/sec, a target base distance of 10cm and a working power of 20W-100W, a silver mirror with a reflective layer is prepared. The electrode thickness is 100nm-300nm.

The reflective layer can be replaced by metals such as Al\Cu.

Step 3: Please refer to FIG. 6 c and FIG. 7 , using the first physical mask to magnetron sputter the gold source and drain electrodes on the sapphire substrate.

The sputtering target is made of gold with a mass ratio of purity >99.99%, and Ar with a mass percentage purity of 99.999% is used as the sputtering gas to pass into the sputtering chamber. Rinse for 5 minutes, then vacuum. Under the conditions of vacuum degree of 6×10 ^-4 ~ 1.3×10 ^-3 Pa, argon gas flow rate of 20-30cm3/sec, target base distance of 10cm and working power of 20W-100W, the source and drain electrode gold was prepared. The electrode thickness is 100nm-300nm.

The source and drain electrodes can be replaced by metals such as Al\Ti\Ni\Ag\Pt. Among them, Au\Ag\Pt has stable chemical properties; Al\Ti\Ni has low cost.

Step 4: Please refer to FIG. 6d, on the source and drain electrodes prepared in step 3 and the uncovered substrate, magnetron sputtering process or atomic layer deposition process is used to deposit electron transport layer TiO ₂ material.

The target used in the magnetron sputtering process is a TiO ₂ target with a purity mass percentage >99.99%. The target diameter is 50mm and the thickness is 1.5-3mm. Clean for 5 minutes, then vacuumize, the vacuum degree is 1.3×10 ^-3 ~ 3×10 ^-3 Pa, then pass in argon and oxygen in sequence, and control the volume ratio of argon and oxygen to 9:1 by adjusting the flow rate, the total The pressure is kept at 2.0Pa, the sputtering power is 60-80W, and after the growth is completed, it is annealed at 70°C to 150°C to prepare a TiO ₂ electron transport layer on the source and drain electrodes and the uncovered substrate. The layer thickness is 50-200 nm.

Step 5: Referring to FIG. 6e , a thin active layer PCBM is prepared by spin-coating materials on the electron transport layer.

The active layer is spin-coated on the electron transport layer, and the mass concentration of the PCBM material is 8mg/ml, preferably 16ml. The solvent of the active layer solution is chlorobenzene, and the spin coating is carried out in a glove box filled with an inert gas, and then annealed at 50° C.-200° C. for 10 minutes to 100 minutes. The thickness of the active layer is 20nm-100nm.

Step 6: Referring to FIG. 6f, a light-absorbing layer is prepared on the active layer by a single spin-coating method.

Using a single spin coating method, spin-coat the CH ₃ NH ₃ PbI ₃ light-absorbing layer on the active layer obtained in step 5, add 654 mg of PbI ₂ and 217 mg of CH ₃ NH ₃ I into DMSO:GBL successively to obtain PbI ₂ and CH ₃ NH ₃ I mixed solution; Stir the mixed solution of PbI ₂ and CH ₃ NH ₃ I at 80 degrees Celsius for two hours to obtain a stirred solution; leave the stirred solution at 80 degrees Celsius for 1 hour to obtain CH ₃ NH ₃ PbI ₃ solution; drop CH ₃ NH ₃ PbI ₃ solution onto the active layer obtained in step 5, and anneal at 100 degrees Celsius for 20 minutes to form a CH ₃ NH ₃ PbI ₃ light-absorbing layer with a thickness of 200 -300nm.

Step 7: Referring to FIG. 6g and FIG. 8, use the second physical mask to magnetron sputter gate electrode gold material on the light absorbing layer.

Using the magnetron sputtering process to magnetron sputter gate electrode gold material on the light absorbing layer obtained in step 7, the sputtering target material is selected from gold with a mass ratio purity>99.99%, and Ar with a mass percentage purity of 99.999% is used as the sputtering gas Pass into the sputtering chamber. Before sputtering, clean the chamber of the magnetron sputtering equipment with high-purity argon for 5 minutes, and then vacuumize it. Under the conditions of a vacuum degree of 6×10 ^-4 -1.3×10 ^-3 Pa, an argon gas flow rate of 20-30cm ³ /sec, a target base distance of 10cm and a working power of 20W-100W, the gate electrode gold was prepared. The electrode thickness is 100nm-300nm.

The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be assumed that the specific implementation of the present invention is limited to these descriptions. For those of ordinary skill in the technical field of the present invention, without departing from the concept of the present invention, some simple deduction or replacement can be made, which should be regarded as belonging to the protection scope of the present invention.

Claims (9)

1. it is a kind of to be based on CH₃NH₃PbI₃The preparation method of the reflective enhancing N-type hetero-junctions HEMT of substrate of material, it is characterised in that Including：

Choose Sapphire Substrate；

Reflector layer is formed in the Sapphire Substrate lower surface；

Source-drain electrode is made in the Sapphire Substrate upper surface；

The Sapphire Substrate upper surface not covered in the source-drain electrode and by the source-drain electrode forms electric transmission Layer；

Being formed in the electric transmission layer surface includes CH₃NH₃PbI₃The light absorbing zone of material；

Make gate electrode to ultimately form the N-type hetero-junctions HEMT on the light absorbing zone surface.

2. method according to claim 1, it is characterised in that form reflector layer, bag in the Sapphire Substrate lower surface Include：

Using Ag materials as target, sputtering chamber is passed through as sputter gas using Ar, is 6 × 10 in vacuum^-4~1.3 × 10^-3Pa, Under conditions of sputtering power is 20~100W, using magnetron sputtering technique, Ag materials are sputtered in the Sapphire Substrate lower surface Form the reflector layer.

3. method according to claim 1, it is characterised in that make source-drain electrode in the Sapphire Substrate upper surface, Including：

Using the first physical mask version, using Au materials as target, sputtering chamber is passed through as sputter gas using Ar, is in vacuum 6×10^-4~1.3 × 10^-3Pa, sputtering power be 20~100W under conditions of, the Sapphire Substrate upper surface sputter Au materials Material forms the source-drain electrode.

4. method according to claim 1, it is characterised in that covered in the source-drain electrode and not by the source-drain electrode The Sapphire Substrate upper surface of lid forms electron transfer layer, including：

With TiO₂Material as target, with Ar and O₂Sputtering chamber is passed through as sputter gas, is 1.3 × 10 in vacuum^-3~3 × 10^-3Pa, sputtering power be 60~80W under conditions of, the whole substrate including the source-drain electrode upper surface sputter TiO₂ Material forms electron transfer layer described in the source.

5. method according to claim 1, it is characterised in that being formed in the electric transmission layer surface includes CH₃NH₃PbI₃The light absorbing zone of material, including：

It is the PCBM materials of 8mg/ml, annealing in the electric transmission layer surface spin quality concentration using single spin coating proceeding Active layer is formed after treatment；

Using single spin coating proceeding, in the active layer surface spin coating CH₃NH₃PbI₃Material；

Using annealing process, to the CH₃NH₃PbI₃Material carries out annealing and forms the light absorbing zone.

6. method according to claim 1, it is characterised in that being formed in the electric transmission layer surface includes CH₃NH₃PbI₃The light absorbing zone of material, including：

Using single spin coating proceeding, by CH₃NH₃PbI₃The electric transmission layer surface is spin-coated on the mixed solution of PCBM to be formed CH₃NH₃PbI₃/ PCBM materials；

Using annealing process, to the CH₃NH₃PbI₃/ PCBM materials carry out annealing and form the light absorbing zone.

7. method according to claim 6, it is characterised in that by CH₃NH₃PbI₃Institute is spin-coated on the mixed solution of PCBM State electric transmission layer surface and form CH₃NH₃PbI₃/ PCBM materials, including：

By PbI₂Material and CH₃NH₃I materials successively add DMSO:PbI is formed in GBL solution₂And CH₃NH₃The mixed solution of I；

By the PbI₂And CH₃NH₃The mixed solution heating stirring of I, and CH is formed after being made annealing treatment₃NH₃PbI₃Solution；

By the CH₃NH₃PbI₃The electric transmission layer surface is spin-coated on after solution and the mixing of PCBM solution form described CH₃NH₃PbI₃/ PCBM materials.

8. method according to claim 1, it is characterised in that make gate electrode on the light absorbing zone surface, including：

Using the second mask plate, using Au materials as target, sputtering chamber is passed through as sputter gas using Ar gases, is in vacuum 6×10^-4~1.3 × 10^-3Pa, sputtering power be 20~100W under conditions of, the light absorbing zone surface sputter Au material shapes Into the gate electrode.

9. it is a kind of to be based on CH₃NH₃PbI₃The reflective enhanced N-type hetero-junctions HEMT of substrate of material, it is characterised in that the N-type is different Methods of the matter knot HEMT as described in claim any one of 1-8 is prepared and formed.