CN106783998A - A kind of GaN high electron mobility transistor based on diamond substrate and preparation method thereof - Google Patents
A kind of GaN high electron mobility transistor based on diamond substrate and preparation method thereof Download PDFInfo
- Publication number
- CN106783998A CN106783998A CN201611169999.8A CN201611169999A CN106783998A CN 106783998 A CN106783998 A CN 106783998A CN 201611169999 A CN201611169999 A CN 201611169999A CN 106783998 A CN106783998 A CN 106783998A
- Authority
- CN
- China
- Prior art keywords
- gallium nitride
- temporary carrier
- silicon carbide
- gan
- disk
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 50
- 239000010432 diamond Substances 0.000 title claims abstract description 50
- 239000000758 substrate Substances 0.000 title claims abstract description 45
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 75
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 59
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 33
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 30
- 238000005530 etching Methods 0.000 claims abstract description 7
- 238000004140 cleaning Methods 0.000 claims abstract description 6
- 238000005498 polishing Methods 0.000 claims abstract description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 239000008367 deionised water Substances 0.000 claims description 10
- 229910021641 deionized water Inorganic materials 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 238000001020 plasma etching Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000000407 epitaxy Methods 0.000 claims 4
- 239000007788 liquid Substances 0.000 claims 4
- 230000002238 attenuated effect Effects 0.000 claims 2
- 238000001816 cooling Methods 0.000 claims 2
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 239000000853 adhesive Substances 0.000 description 16
- 230000001070 adhesive effect Effects 0.000 description 16
- 238000010586 diagram Methods 0.000 description 9
- 239000011521 glass Substances 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 238000001035 drying Methods 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
- H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
- H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
本发明公开了一种基于金刚石衬底的氮化镓高电子迁移率晶体管及其制备方法，首先清洗碳化硅基氮化镓圆片和临时载片表面；在临时载片的正面涂敷粘合材料作为键合材料，并放在热板上烘烤；将碳化硅基氮化镓圆片和临时载片正面相对进行键合；将碳化硅基氮化镓圆片的碳化硅衬底减薄抛光、刻蚀去除掉剩余的碳化硅衬底；清洗以临时载片为支撑的氮化镓外延层表面；在以临时载片为支撑的氮化镓外延层表面生长一层介质；将以临时载片为支撑的氮化镓外延层外延生长多晶金刚石衬底，将金刚石基氮化镓圆片与临时载片自动分离；在金刚石基氮化镓圆片上制备高电子迁移率晶体管。本发明打破了原有外延生长难度大的限制，能够较好的控制在氮化镓上外延生长金刚石。
The invention discloses a gallium nitride high electron mobility transistor based on a diamond substrate and a preparation method thereof. Firstly, the silicon carbide-based gallium nitride wafer and the surface of a temporary carrier are cleaned; the surface of the temporary carrier is coated and bonded The material is used as a bonding material and baked on a hot plate; the silicon carbide-based gallium nitride wafer and the temporary carrier are bonded facing each other; the silicon carbide substrate of the silicon carbide-based gallium nitride wafer is thinned Polishing and etching to remove the remaining silicon carbide substrate; cleaning the surface of the GaN epitaxial layer supported by the temporary carrier; growing a layer of dielectric on the surface of the GaN epitaxial layer supported by the temporary carrier; The carrier is epitaxially grown polycrystalline diamond substrate supported by the GaN epitaxial layer, and the GaN-on-diamond wafer is automatically separated from the temporary carrier; high electron mobility transistors are prepared on the GaN-on-diamond wafer. The invention breaks the limitation of the original epitaxial growth difficulty, and can better control the epitaxial growth of diamond on the gallium nitride.
Description
技术领域technical field
本发明属于半导体工艺技术领域，特别是一种基于金刚石衬底的氮化镓高电子迁移率晶体管及其制备方法。The invention belongs to the technical field of semiconductor technology, in particular to a gallium nitride high electron mobility transistor based on a diamond substrate and a preparation method thereof.
背景技术Background technique
氮化镓高电子迁移率晶体管作为第三代宽禁带化合物半导体器件，具有高二维电子气浓度、高击穿场强、高的电子饱和速度等特点。但是氮化镓高电子迁移率晶体管的功率性能优势远未充分发挥，其主要原因之一是氮化镓微波功率器件在输出大功率的同时会产生大量的热，却无法快捷有效地将这些热量散发出去。目前氮化镓材料主要外延生长在碳化硅、蓝宝石等衬底材料上(200610011228.6、200810226288.9、201410582456.3)，而这些衬底材料具有较低的热导率，散热问题严重限制了氮化镓器件的性能。Gallium nitride high electron mobility transistors, as the third-generation wide bandgap compound semiconductor devices, have the characteristics of high two-dimensional electron gas concentration, high breakdown field strength, and high electron saturation velocity. However, the power performance advantages of GaN high electron mobility transistors are far from being fully utilized. One of the main reasons is that GaN microwave power devices generate a lot of heat while outputting high power, but they cannot quickly and effectively dissipate the heat. Let it out. At present, gallium nitride materials are mainly epitaxially grown on substrate materials such as silicon carbide and sapphire (200610011228.6, 200810226288.9, 201410582456.3), and these substrate materials have low thermal conductivity, and the heat dissipation problem seriously limits the performance of gallium nitride devices .
因此寻找具有高的导热性衬底材料成为了解决散热问题的瓶颈。金刚石具有很高的热导率(800-2000W/mK)，所以金刚石基氮化镓相比蓝宝石基氮化镓、硅基氮化镓以及碳化硅基氮化镓有着更好散热优势。不过当前在金刚石衬底上直接外延生长氮化镓的方法存在很大的问题，生长难度大，同时晶格失配会产生较大的位错密度，导致在金刚石衬底上外延生长氮化镓材料质量差，从而使得基于金刚石衬底的氮化镓高电子迁移率晶体管性能优势无法充分发挥。目前研究人员还没有很好的解决在金刚石衬底上外延生长氮化镓质量差以及生长难度大的问题，这也限制了金刚石基氮化镓器件的发展。Therefore, finding a substrate material with high thermal conductivity has become a bottleneck to solve the heat dissipation problem. Diamond has a very high thermal conductivity (800-2000W/mK), so GaN-on-diamond has better heat dissipation advantages than GaN-on-sapphire, GaN-on-silicon and GaN-on-SiC. However, the current method of directly epitaxially growing GaN on a diamond substrate has a lot of problems. The material quality is poor, so that the performance advantages of GaN high electron mobility transistors based on diamond substrates cannot be fully exploited. At present, researchers have not yet solved the problems of poor quality and difficult growth of GaN epitaxially grown on diamond substrates, which also limits the development of GaN-on-diamond devices.
发明内容Contents of the invention
本发明的目的在于提供一种基于金刚石衬底的氮化镓高电子迁移率晶体管及其制备方法，能够获得高质量的基于金刚石衬底的氮化镓高电子迁移率晶体管。The object of the present invention is to provide a GaN high electron mobility transistor based on a diamond substrate and a preparation method thereof, which can obtain a high quality GaN high electron mobility transistor based on a diamond substrate.
实现本发明目的的技术解决方案为：一种基于金刚石衬底的氮化镓高电子迁移率晶体管及其制备方法，包括以下步骤：The technical solution for realizing the purpose of the present invention is: a gallium nitride high electron mobility transistor based on a diamond substrate and a preparation method thereof, comprising the following steps:
1)用盐酸清洗碳化硅基氮化镓圆片和临时载片表面，再用去离子水进行冲洗，然后放入甩干机进行甩干；1) Cleaning the silicon carbide-based gallium nitride disc and the surface of the temporary slide with hydrochloric acid, then rinsing with deionized water, and then putting them into a dryer for drying;
2)在临时载片的正面涂敷粘合材料作为键合材料；2) Coating an adhesive material on the front side of the temporary slide as a bonding material;
3)将临时载片正面朝上放在热板上烘烤；3) Place the temporary slide face up on the hot plate for baking;
4)待临时载片在室温下自然冷却后，将碳化硅基氮化镓圆片和临时载片正面相对进行键合；4) After the temporary carrier is naturally cooled at room temperature, the silicon carbide-based gallium nitride wafer and the temporary carrier are bonded facing each other;
5)将碳化硅基氮化镓圆片的碳化硅衬底减薄抛光，然后利用反应等离子体刻蚀去除掉剩余的碳化硅衬底，同时刻蚀会停止在刻蚀停止层，不会对氮化镓外延层造成破坏，此时得到了以临时载片为支撑的氮化镓外延层；5) Thin and polish the silicon carbide substrate of the silicon carbide-based gallium nitride wafer, and then use reactive plasma etching to remove the remaining silicon carbide substrate. At the same time, the etching will stop at the etch stop layer, which will not affect the The gallium nitride epitaxial layer is damaged, and the gallium nitride epitaxial layer supported by the temporary carrier is obtained at this time;
6)用盐酸清洗以临时载片为支撑的氮化镓外延层表面，再用去离子水进行冲洗，然后放入甩干机进行甩干；6) Cleaning the surface of the gallium nitride epitaxial layer supported by the temporary carrier with hydrochloric acid, then rinsing with deionized water, and then putting it into a dryer for drying;
7)在以临时载片为支撑的氮化镓外延层表面通过等离子体增强化学气相沉积生长一层介质；7) growing a layer of medium by plasma-enhanced chemical vapor deposition on the surface of the gallium nitride epitaxial layer supported by the temporary carrier;
8)将以临时载片为支撑的氮化镓外延层放入化学气相沉积反应腔内在介质层表面低温外延生长多晶金刚石衬底，得到了金刚石基氮化镓圆片；8) Put the gallium nitride epitaxial layer supported by the temporary carrier into the chemical vapor deposition reaction chamber, and epitaxially grow the polycrystalline diamond substrate on the surface of the dielectric layer at low temperature, and obtain the diamond-based gallium nitride wafer;
9)将金刚石基氮化镓圆片浸泡在粘合材料去除液中，待粘合材料被去除液全部溶解后金刚石基氮化镓圆片将与临时载片自动分离；9) Soak the gallium nitride-on-diamond disc in the adhesive material removal solution, and the gallium nitride-on-diamond disc will be automatically separated from the temporary carrier after the adhesive material is completely dissolved by the removal solution;
10)在金刚石基氮化镓圆片上制备高电子迁移率晶体管，从而得到了基于金刚石衬底的氮化镓高电子迁移率晶体管。10) Fabricate high electron mobility transistors on diamond-based GaN wafers, thereby obtaining GaN high electron mobility transistors based on diamond substrates.
本发明与现有技术相比，其显著优点：(1)打破了在金刚石衬底上外延生长氮化镓质量差以及难以生长的限制。(2)粘合材料均匀性好，使得外延层不易起皱或者断裂。(3)采用在以临时载片为支撑的氮化镓上外延生长金刚石，同时在氮化镓与金刚石之间沉积薄介质起保护氮化镓外延层的作用也不会影响散热，与传统在金刚石衬底上外延生长氮化镓的方法相比，打破了原有外延生长难度大的限制，能够较好的控制在氮化镓上外延生长金刚石。Compared with the prior art, the present invention has significant advantages: (1) It breaks the limitation of poor quality and difficult growth of gallium nitride epitaxially grown on a diamond substrate. (2) The uniformity of the adhesive material is good, so that the epitaxial layer is not easy to wrinkle or break. (3) Diamond is epitaxially grown on gallium nitride supported by a temporary carrier, and a thin dielectric is deposited between gallium nitride and diamond to protect the epitaxial layer of gallium nitride and will not affect heat dissipation, which is different from the traditional Compared with the method of epitaxially growing gallium nitride on a diamond substrate, it breaks the limitation of the original difficulty of epitaxial growth, and can better control the epitaxial growth of diamond on gallium nitride.
下面结合附图对本发明作进一步详细描述。The present invention will be described in further detail below in conjunction with the accompanying drawings.
附图说明Description of drawings
图1是临时载片样品示意图。Figure 1 is a schematic diagram of a temporary slide sample.
图2是碳化硅基氮化镓样品示意图。Figure 2 is a schematic diagram of a GaN-on-SiC sample.
图3是临时载片正面旋涂粘合材料示意图。Figure 3 is a schematic diagram of spin-coating adhesive material on the front side of a temporary slide.
图4是临时载片正面朝下和碳化硅基氮化镓键合示意图。Fig. 4 is a schematic diagram of bonding a temporary carrier face-down to GaN-on-SiC.
图5是将碳化硅基氮化镓的碳化硅衬底去除示意图。FIG. 5 is a schematic diagram of removing the silicon carbide substrate of GaN-on-SiC.
图6是在以临时载片为支撑的氮化镓外延层表面沉积介质层示意图。Fig. 6 is a schematic diagram of depositing a dielectric layer on the surface of a gallium nitride epitaxial layer supported by a temporary carrier.
图7是在以临时载片为支撑的氮化镓外延层上外延生长金刚石衬底示意图。Fig. 7 is a schematic diagram of epitaxially growing a diamond substrate on a gallium nitride epitaxial layer supported by a temporary carrier.
图8是将临时载片和粘合材料去除示意图。Figure 8 is a schematic diagram of removing the temporary carrier and adhesive material.
图9是在金刚石基氮化镓上制备高电子迁移率晶体管示意图。Fig. 9 is a schematic diagram of high electron mobility transistors fabricated on GaN-on-diamond.
具体实施方式detailed description
本发明基于金刚石衬底的氮化镓高电子迁移率晶体管及其制备方法，包括以下步骤：The present invention is based on a diamond substrate gallium nitride high electron mobility transistor and a preparation method thereof, comprising the following steps:
1)用盐酸清洗碳化硅基氮化镓圆片和临时载片表面，再用去离子水进行冲洗，然后放入甩干机进行甩干。1) Clean the silicon carbide-based gallium nitride wafer and the surface of the temporary slide with hydrochloric acid, rinse with deionized water, and then put it into a dryer for drying.
2)在临时载片的正面涂敷粘合材料作为键合材料。所述步骤2)中的涂敷采用旋涂方法，转速1000转/分钟-3000转/分钟，时间为30-60秒。2) Coating an adhesive material as a bonding material on the front side of the temporary carrier. The coating in the step 2) adopts the spin coating method, the rotating speed is 1000 rpm-3000 rpm, and the time is 30-60 seconds.
3)将临时载片正面朝上放在热板上烘烤。所述步骤3)中的烘烤时间为2-5分钟，热板温度为100-110摄氏度。3) Place the temporary slides face up on a hot plate and bake. The baking time in the step 3) is 2-5 minutes, and the temperature of the hot plate is 100-110 degrees Celsius.
4)待临时载片在室温下自然冷却后，将碳化硅基氮化镓圆片和临时载片正面相对进行键合。所述步骤4)中的键合温度为250-350摄氏度。4) After the temporary carrier is naturally cooled at room temperature, the silicon carbide-based gallium nitride wafer and the temporary carrier are bonded facing each other. The bonding temperature in step 4) is 250-350 degrees Celsius.
5)将碳化硅基氮化镓圆片的碳化硅衬底减薄抛光至小于50微米的厚度，然后利用反应等离子体刻蚀去除掉剩余的碳化硅衬底，同时刻蚀会停止在刻蚀停止层，不会对氮化镓外延层造成破坏，此时得到了以临时载片为支撑的氮化镓外延层。5) Thinning and polishing the silicon carbide substrate of the silicon carbide-based gallium nitride wafer to a thickness of less than 50 microns, and then using reactive plasma etching to remove the remaining silicon carbide substrate, and the etching will stop at the same time The stop layer will not cause damage to the GaN epitaxial layer. At this time, the GaN epitaxial layer supported by the temporary carrier is obtained.
6)用盐酸清洗以临时载片为支撑的氮化镓外延层表面，再用去离子水进行冲洗，然后放入甩干机进行甩干。6) Cleaning the surface of the GaN epitaxial layer supported by the temporary carrier with hydrochloric acid, rinsing with deionized water, and then putting it into a dryer for drying.
7)在以临时载片为支撑的氮化镓外延层表面通过等离子体增强化学气相沉积生长一层介质。所述步骤7)中的介质是氮化硅或氧化硅，生长厚度20-50纳米。7) A layer of dielectric is grown on the surface of the GaN epitaxial layer supported by the temporary carrier by plasma-enhanced chemical vapor deposition. The medium in step 7) is silicon nitride or silicon oxide, with a growth thickness of 20-50 nanometers.
8)将以临时载片为支撑的氮化镓外延层放入化学气相沉积反应腔内在介质层表面低温外延生长多晶金刚石衬底，得到了金刚石基氮化镓圆片。所述步骤8)中的生长温度为400-500℃，厚度为90-100微米。8) Put the GaN epitaxial layer supported by the temporary carrier into the chemical vapor deposition reaction chamber, and epitaxially grow the polycrystalline diamond substrate on the surface of the dielectric layer at low temperature, and obtain the GaN-on-diamond wafer. The growth temperature in the step 8) is 400-500° C., and the thickness is 90-100 microns.
9)将金刚石基氮化镓圆片浸泡在粘合材料去除液中，待粘合材料被去除液全部溶解后金刚石基氮化镓圆片将与临时载片自动分离。9) Soak the gallium nitride-on-diamond disc in the adhesive material removal solution, and the gallium nitride-on-diamond disc will be automatically separated from the temporary carrier after the adhesive material is completely dissolved by the removal solution.
10)在金刚石基氮化镓圆片上制备高电子迁移率晶体管，从而得到了基于金刚石衬底的氮化镓高电子迁移率晶体管。10) Fabricate high electron mobility transistors on diamond-based GaN wafers, thereby obtaining GaN high electron mobility transistors based on diamond substrates.
实施例Example
本发明基于金刚石衬底的氮化镓高电子迁移率晶体管的制备方法，由以下步骤制备而得：The preparation method of the gallium nitride high electron mobility transistor based on the diamond substrate of the present invention is prepared by the following steps:
①准备样品：将碳化硅基氮化镓圆片和玻璃载片浸泡在稀释的盐酸中漂洗60秒钟，再用去离子水清洗，用氮气吹干，最后放在烘箱中彻底烘干水分，保证表面清洁干燥。如图1、图2所示。①Preparation of samples: Soak GaN-on-SiC wafers and glass slides in dilute hydrochloric acid for 60 seconds, rinse with deionized water, blow dry with nitrogen, and finally dry the water thoroughly in an oven. Make sure the surface is clean and dry. As shown in Figure 1 and Figure 2.
②在临时载片正面涂敷粘合材料：在临时载片的正面滴适量的粘合材料，根据不同厚度需要用1000-3000转/分钟的速率进行旋涂，旋涂时间不少于30秒钟，将涂好粘合材料的临时载片正面朝上放在热板上进行预烘烤，热板温度在100-110摄氏度左右，时间2～5分钟。如在玻璃载片正面上旋涂粘合材料，转速为3000转/分钟，加速度为5000转/秒，旋涂时间为60秒，将涂好粘合材料的玻璃载片正面朝上放热板上，热板温度为110摄氏度，烘片时间2分钟，如图3所示。②Apply adhesive material on the front of the temporary slide: drop an appropriate amount of adhesive material on the front of the temporary slide, and spin coat at a rate of 1000-3000 rpm according to different thicknesses, and the spin coating time should not be less than 30 seconds After 10 minutes, place the temporary carrier coated with the adhesive material face up on the hot plate for pre-baking. The temperature of the hot plate is about 100-110 degrees Celsius, and the time is 2-5 minutes. If the adhesive material is spin-coated on the front of the glass slide, the speed is 3000 rpm, the acceleration is 5000 rpm, and the spin-coating time is 60 seconds, and the glass slide coated with the adhesive material faces upward on the heat release plate. , the temperature of the hot plate is 110 degrees Celsius, and the drying time is 2 minutes, as shown in Figure 3.
③键合：将碳化硅基氮化镓圆片和临时载片的正面相对叠在一起，利用键合机进行圆片键合，键合温度为250-350摄氏度，键合时间1-2小时。如将玻璃载片从热板上取出，室温下自然冷却后和碳化硅基氮化镓圆片正面相对叠在一起，使碳化硅基氮化镓圆片和玻璃载片尽量完全重叠，边缘整齐。用夹具固定好放入键合机进行键合，键合温度为350摄氏度，键合时间为1小时，如图4所示。③ Bonding: stack the GaN wafer on silicon carbide and the front side of the temporary carrier relative to each other, and use a bonding machine to bond the wafers. The bonding temperature is 250-350 degrees Celsius, and the bonding time is 1-2 hours. . Take out the glass slide from the hot plate, let it cool naturally at room temperature, and stack it with the GaN-on-SiC disc face-to-face, so that the GaN-on-SiC disc and the glass slide overlap as completely as possible, and the edges are neat . Fix it with a fixture and put it into a bonding machine for bonding. The bonding temperature is 350 degrees Celsius and the bonding time is 1 hour, as shown in Figure 4.
④背面工艺：键合完成后碳化硅基氮化镓圆片的衬底经过磨片，磨到碳化硅衬底厚度剩余100微米左右，然后进行抛光，抛光至碳化硅衬底厚度剩余50微米左右，再用把剩余碳化硅衬底利用反应等离子体刻蚀掉，如图5所示。④Back side process: After the bonding is completed, the substrate of the silicon carbide-based gallium nitride wafer is ground to a thickness of about 100 microns remaining on the silicon carbide substrate, and then polished to a thickness of about 50 microns remaining on the silicon carbide substrate , and then etch away the remaining silicon carbide substrate using reactive plasma, as shown in FIG. 5 .
⑤沉积介质：用稀释的盐酸清洗以玻璃载片为支撑的氮化镓外延层表面60秒钟，再用去离子水进行冲洗，放入甩干机进行甩干，然后在以临时载片为支撑的氮化镓外延层表面通过等离子体增强化学气相沉积生长一层介质，此介质可以是氮化硅或氧化硅等，生长厚度20-50纳米，如图6所示。⑤ Deposition medium: wash the surface of GaN epitaxial layer supported by a glass slide with diluted hydrochloric acid for 60 seconds, then rinse with deionized water, put it in a spin dryer to dry, and then use a temporary slide as a A layer of medium is grown on the surface of the supported gallium nitride epitaxial layer by plasma-enhanced chemical vapor deposition. The medium can be silicon nitride or silicon oxide, etc., with a growth thickness of 20-50 nanometers, as shown in FIG. 6 .
⑥低温外延生长金刚石：在以玻璃载片为支撑的氮化镓外延层放入化学气相沉积反应腔内在介质层表面低温外延生长多晶金刚石衬底，生长温度控制在400-500℃，厚度100微米，得到了金刚石基氮化镓圆片，如图7所示。⑥Low-temperature epitaxial growth of diamond: the GaN epitaxial layer supported by glass slides is placed in a chemical vapor deposition reaction chamber, and a polycrystalline diamond substrate is grown on the surface of the dielectric layer at low temperature. The growth temperature is controlled at 400-500°C and the thickness is 100 Micron, GaN-on-diamond wafers were obtained, as shown in Figure 7.
⑦去键合：将金刚石基氮化镓圆片浸泡在粘合材料去除液中，待粘合材料被去除液全部溶解后金刚石基氮化镓圆片将与临时载片自动分离，如图8所示。⑦Debonding: Soak the GaN-on-diamond disc in the adhesive material removal solution, and the GaN-on-diamond disc will be automatically separated from the temporary carrier after the adhesive material is completely dissolved by the removal solution, as shown in Figure 8 shown.
⑧制备器件：在金刚石基氮化镓圆片上制备高电子迁移率晶体管，经过以上步骤，就实现了基于金刚石衬底的氮化镓高电子迁移率晶体管的制备，如图9所示。⑧Preparation of devices: high electron mobility transistors were prepared on diamond-based GaN wafers. After the above steps, the preparation of GaN high electron mobility transistors based on diamond substrates was realized, as shown in Figure 9.
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611169999.8A CN106783998A (en) | 2016-12-16 | 2016-12-16 | A kind of GaN high electron mobility transistor based on diamond substrate and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611169999.8A CN106783998A (en) | 2016-12-16 | 2016-12-16 | A kind of GaN high electron mobility transistor based on diamond substrate and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106783998A true CN106783998A (en) | 2017-05-31 |
Family
ID=58891977
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611169999.8A Pending CN106783998A (en) | 2016-12-16 | 2016-12-16 | A kind of GaN high electron mobility transistor based on diamond substrate and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106783998A (en) |
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107204282A (en) * | 2017-06-26 | 2017-09-26 | 北京科技大学 | A kind of method based on non-self-supporting GaN to being sticked with standby Buddha's warrior attendant ground mass GaN |
| CN107731903A (en) * | 2017-09-14 | 2018-02-23 | 西安电子科技大学 | GaN device with high electron mobility and preparation method based on soi structure diamond compound substrate |
| CN107946186A (en) * | 2017-11-01 | 2018-04-20 | 中国电子科技集团公司第五十五研究所 | A kind of Buddha's warrior attendant ground mass GaN HEMTs preparation methods |
| CN108461542A (en) * | 2018-03-23 | 2018-08-28 | 中国电子科技集团公司第五十五研究所 | A kind of Buddha's warrior attendant ground mass GaN high electron mobility transistor and preparation method thereof |
| CN108597993A (en) * | 2018-07-05 | 2018-09-28 | 西安交通大学 | A kind of Direct Bonding method of gallium nitride/diamond |
| CN108598036A (en) * | 2018-06-26 | 2018-09-28 | 苏州汉骅半导体有限公司 | Buddha's warrior attendant ground mass gallium nitride device manufacturing method |
| CN108807153A (en) * | 2018-04-08 | 2018-11-13 | 中国电子科技集团公司第五十五研究所 | Buddha's warrior attendant ground mass gallium nitride transistor and the preparation method based on surface-activated bond technique |
| CN108847392A (en) * | 2018-06-26 | 2018-11-20 | 苏州汉骅半导体有限公司 | Buddha's warrior attendant ground mass gallium nitride device manufacturing method |
| CN109637965A (en) * | 2018-11-12 | 2019-04-16 | 北京科技大学 | A kind of method and application for realizing the transfer of GaN initial substrates using double diamond layers |
| CN110164766A (en) * | 2019-04-23 | 2019-08-23 | 西安电子科技大学 | A kind of gallium nitride device and preparation method thereof based on diamond substrate |
| CN111226314A (en) * | 2018-07-27 | 2020-06-02 | 无锡艾克柏国际微电子科技有限公司 | Multilayer composite semiconductor substrate structure and preparation method thereof |
| CN111540710A (en) * | 2020-05-11 | 2020-08-14 | 中国科学院上海微系统与信息技术研究所 | A kind of preparation method of high thermal conductivity gallium nitride high power HEMT device |
| CN112201567A (en) * | 2020-09-25 | 2021-01-08 | 北京大学东莞光电研究院 | Preparation method of high-thermal-conductivity substrate for nitride material epitaxy |
| CN112435919A (en) * | 2020-10-27 | 2021-03-02 | 中国电子科技集团公司第五十五研究所 | Method for integrating diamond and GaAs terahertz Schottky diode |
| CN113571416A (en) * | 2021-07-19 | 2021-10-29 | 太原理工大学 | Diamond-based gallium nitride high-electron-mobility transistor and preparation method thereof |
| CN113690183A (en) * | 2021-07-06 | 2021-11-23 | 华为数字能源技术有限公司 | Wafer thinning method |
| CN113990826A (en) * | 2021-10-26 | 2022-01-28 | 山东大学 | Near-junction heat dissipation method of silicon-based gallium nitride device |
| US11243226B2 (en) | 2019-04-04 | 2022-02-08 | Autochips Wuhan Co., Ltd. | Composite sensor and manufacturing method thereof |
| CN114365262A (en) * | 2019-06-21 | 2022-04-15 | 三菱电机株式会社 | Manufacturing method of composite substrate and composite substrate |
| CN115020195A (en) * | 2022-05-31 | 2022-09-06 | 东莞市天域半导体科技有限公司 | A method for preventing colloidal residue on the surface of a silicon carbide epitaxial wafer during grinding and polishing |
| CN115863400A (en) * | 2023-02-24 | 2023-03-28 | 成都功成半导体有限公司 | A GaN-based HEMT device with high thermal conductivity and its preparation method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1636087A (en) * | 2002-01-22 | 2005-07-06 | S.O.I.Tec绝缘体上硅技术公司 | Method for manufacturing a free-standing substrate made of monocrystalline semi-conductor material |
| US20070287273A1 (en) * | 2000-11-27 | 2007-12-13 | Alice Boussagol | Methods for making substrates and substrates formed therefrom |
| CN100442439C (en) * | 2000-11-27 | 2008-12-10 | S.O.I.Tec绝缘体上硅技术公司 | A substrate processing method particularly suitable for optical, electronic or optoelectronic devices and a substrate obtained by the method |
| US20160049351A1 (en) * | 2014-08-15 | 2016-02-18 | Board Of Regents University Of Oklahoma | High-Power Electronic Device Packages and Methods |
-
2016
- 2016-12-16 CN CN201611169999.8A patent/CN106783998A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070287273A1 (en) * | 2000-11-27 | 2007-12-13 | Alice Boussagol | Methods for making substrates and substrates formed therefrom |
| CN100442439C (en) * | 2000-11-27 | 2008-12-10 | S.O.I.Tec绝缘体上硅技术公司 | A substrate processing method particularly suitable for optical, electronic or optoelectronic devices and a substrate obtained by the method |
| CN1636087A (en) * | 2002-01-22 | 2005-07-06 | S.O.I.Tec绝缘体上硅技术公司 | Method for manufacturing a free-standing substrate made of monocrystalline semi-conductor material |
| US20160049351A1 (en) * | 2014-08-15 | 2016-02-18 | Board Of Regents University Of Oklahoma | High-Power Electronic Device Packages and Methods |
Cited By (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107204282B (en) * | 2017-06-26 | 2019-07-09 | 北京科技大学 | A method for preparing diamond-based GaN based on non-self-supporting GaN counterbonding |
| CN107204282A (en) * | 2017-06-26 | 2017-09-26 | 北京科技大学 | A kind of method based on non-self-supporting GaN to being sticked with standby Buddha's warrior attendant ground mass GaN |
| CN107731903A (en) * | 2017-09-14 | 2018-02-23 | 西安电子科技大学 | GaN device with high electron mobility and preparation method based on soi structure diamond compound substrate |
| CN107946186A (en) * | 2017-11-01 | 2018-04-20 | 中国电子科技集团公司第五十五研究所 | A kind of Buddha's warrior attendant ground mass GaN HEMTs preparation methods |
| CN108461542A (en) * | 2018-03-23 | 2018-08-28 | 中国电子科技集团公司第五十五研究所 | A kind of Buddha's warrior attendant ground mass GaN high electron mobility transistor and preparation method thereof |
| CN108807153A (en) * | 2018-04-08 | 2018-11-13 | 中国电子科技集团公司第五十五研究所 | Buddha's warrior attendant ground mass gallium nitride transistor and the preparation method based on surface-activated bond technique |
| CN108807153B (en) * | 2018-04-08 | 2021-03-23 | 中国电子科技集团公司第五十五研究所 | Diamond-based gallium nitride transistor based on surface activation bonding process and preparation method |
| CN108598036A (en) * | 2018-06-26 | 2018-09-28 | 苏州汉骅半导体有限公司 | Buddha's warrior attendant ground mass gallium nitride device manufacturing method |
| CN108847392A (en) * | 2018-06-26 | 2018-11-20 | 苏州汉骅半导体有限公司 | Buddha's warrior attendant ground mass gallium nitride device manufacturing method |
| CN108847392B (en) * | 2018-06-26 | 2019-12-03 | 苏州汉骅半导体有限公司 | Buddha's warrior attendant ground mass gallium nitride device manufacturing method |
| CN108597993A (en) * | 2018-07-05 | 2018-09-28 | 西安交通大学 | A kind of Direct Bonding method of gallium nitride/diamond |
| CN108597993B (en) * | 2018-07-05 | 2024-03-12 | 西安德盟特半导体科技有限公司 | A direct bonding method of gallium nitride/diamond |
| CN111226314B (en) * | 2018-07-27 | 2023-12-22 | 青禾晶元(天津)半导体材料有限公司 | Multilayer composite substrate structure and preparation method thereof |
| CN111226314A (en) * | 2018-07-27 | 2020-06-02 | 无锡艾克柏国际微电子科技有限公司 | Multilayer composite semiconductor substrate structure and preparation method thereof |
| CN109637965A (en) * | 2018-11-12 | 2019-04-16 | 北京科技大学 | A kind of method and application for realizing the transfer of GaN initial substrates using double diamond layers |
| WO2020098258A1 (en) * | 2018-11-12 | 2020-05-22 | 北京科技大学 | Method for realizing gan original substrate transfer by using double diamond layers and application |
| US11243226B2 (en) | 2019-04-04 | 2022-02-08 | Autochips Wuhan Co., Ltd. | Composite sensor and manufacturing method thereof |
| CN110164766B (en) * | 2019-04-23 | 2021-01-15 | 西安电子科技大学 | A kind of gallium nitride device based on diamond substrate and preparation method thereof |
| CN110164766A (en) * | 2019-04-23 | 2019-08-23 | 西安电子科技大学 | A kind of gallium nitride device and preparation method thereof based on diamond substrate |
| CN114365262A (en) * | 2019-06-21 | 2022-04-15 | 三菱电机株式会社 | Manufacturing method of composite substrate and composite substrate |
| CN111540710B (en) * | 2020-05-11 | 2023-08-04 | 中国科学院上海微系统与信息技术研究所 | Preparation method of high-heat-conductivity gallium nitride high-power HEMT device |
| CN111540710A (en) * | 2020-05-11 | 2020-08-14 | 中国科学院上海微系统与信息技术研究所 | A kind of preparation method of high thermal conductivity gallium nitride high power HEMT device |
| CN112201567A (en) * | 2020-09-25 | 2021-01-08 | 北京大学东莞光电研究院 | Preparation method of high-thermal-conductivity substrate for nitride material epitaxy |
| CN112201567B (en) * | 2020-09-25 | 2022-10-04 | 北京大学东莞光电研究院 | Preparation method of high-thermal-conductivity substrate for nitride material epitaxy |
| CN112435919A (en) * | 2020-10-27 | 2021-03-02 | 中国电子科技集团公司第五十五研究所 | Method for integrating diamond and GaAs terahertz Schottky diode |
| CN112435919B (en) * | 2020-10-27 | 2022-08-12 | 中国电子科技集团公司第五十五研究所 | A method of integrating diamond and GaAs terahertz Schottky diodes |
| CN113690183A (en) * | 2021-07-06 | 2021-11-23 | 华为数字能源技术有限公司 | Wafer thinning method |
| CN113571416A (en) * | 2021-07-19 | 2021-10-29 | 太原理工大学 | Diamond-based gallium nitride high-electron-mobility transistor and preparation method thereof |
| CN113990826A (en) * | 2021-10-26 | 2022-01-28 | 山东大学 | Near-junction heat dissipation method of silicon-based gallium nitride device |
| CN115020195A (en) * | 2022-05-31 | 2022-09-06 | 东莞市天域半导体科技有限公司 | A method for preventing colloidal residue on the surface of a silicon carbide epitaxial wafer during grinding and polishing |
| CN115863400B (en) * | 2023-02-24 | 2023-05-16 | 成都功成半导体有限公司 | A GaN-based HEMT device with high thermal conductivity and its preparation method |
| CN115863400A (en) * | 2023-02-24 | 2023-03-28 | 成都功成半导体有限公司 | A GaN-based HEMT device with high thermal conductivity and its preparation method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106783998A (en) | A kind of GaN high electron mobility transistor based on diamond substrate and preparation method thereof | |
| CN104157744B (en) | It is a kind of that the method for realizing Buddha's warrior attendant ground mass GaN is shifted based on epitaxial layer | |
| CN107946186A (en) | A kind of Buddha's warrior attendant ground mass GaN HEMTs preparation methods | |
| CN103617944B (en) | Based on photoresist interim bonding and go the method for bonding | |
| CN108807153A (en) | Buddha's warrior attendant ground mass gallium nitride transistor and the preparation method based on surface-activated bond technique | |
| CN104992907A (en) | Method for preparing indium phosphide heterojunction bipolar transistor based on silicon substrate | |
| CN107204282B (en) | A method for preparing diamond-based GaN based on non-self-supporting GaN counterbonding | |
| CN103904015A (en) | Method for stripping and transferring gallium arsenide based epitaxial layer | |
| CN103985664B (en) | Silicon based gallium nitride epitaxial layer peels off the method for transfer | |
| CN108461542A (en) | A kind of Buddha's warrior attendant ground mass GaN high electron mobility transistor and preparation method thereof | |
| CN111009496B (en) | A kind of semiconductor substrate with high thermal conductivity and preparation method thereof | |
| TW201921423A (en) | Wafer with Group III nitride and diamond layers | |
| CN104465373A (en) | Method for making gallium nitride high electron-mobility transistor on silicon slice | |
| US10068762B2 (en) | Manufacture method of gate insulating film for silicon carbide semiconductor device | |
| CN103866380B (en) | A kind ofly use graphical annealing loose structure to carry out the method for GaN crystal growth | |
| CN113571416B (en) | Diamond-based gallium nitride transistor with high electron mobility and preparation method thereof | |
| CN105755536B (en) | An Epitaxial Growth Technique of Nitride Using AlON Buffer Layer | |
| CN104040686B (en) | Thermally oxidized heterogeneous composite substrate and method for manufacturing same | |
| CN110838438B (en) | Method for integrating diamond and gallium nitride | |
| CN102560676B (en) | Method for performing GaN single crystal growth by using thinned and bonded structure | |
| CN103943459B (en) | A kind of method realizing N face GaN based on epitaxial layer transfer | |
| CN111900107B (en) | Method for preparing diamond-based gallium nitride transistor based on direct bonding process | |
| CN113013063B (en) | Front surface processing method of compound semiconductor wafer based on silicon-based carrier | |
| JP7186872B2 (en) | Semiconductor substrate manufacturing method and semiconductor device manufacturing method | |
| CN117305979B (en) | A silicon-based single crystal two-dimensional material epitaxial wafer based on an aluminum oxide buffer layer and a preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170531 |