CN106756885A - A Remote Plasma Atomic Layer Deposition System Modulated by Variable Electric Field - Google Patents

Abstract

The invention belongs to the technical field of atomic layer deposition, and discloses a remote plasma atomic layer deposition system modulated by a variable electric field, which comprises: a cavity; a quartz tube; an insulating ceramic component; an upper electrode plate; a lower electrode disk; an insulating pad; heating the plate; an insulating heat-conducting layer; a power source; a relay. The method solves the problems that the deposition rate of the film is far less than the theoretical expectation, the crystal orientation of the film obtained by atomic layer deposition has random uncontrollable property, and the obtained film is a polycrystalline film with more defects. The variable uniform electric field with the size and the polarity capable of being set randomly is introduced into the reaction cavity, so that the adsorption and chemical reaction active sites on the surface of the substrate are increased, the chemical reaction activity and the film coverage rate of the surface of the substrate are improved, the layered growth of atomic layer deposition atomic resolution is realized, and the crystallization and doping characteristics of the film are regulated and controlled.

Description

A Remote Plasma Atomic Layer Deposition System Modulated by Variable Electric Field

technical field

The invention relates to the technical field of atomic layer deposition, in particular to a remote plasma atomic layer deposition system modulated by a variable electric field.

Background technique

Atomic layer deposition (ALD) is a single-atom layer-by-layer growth method, which has inherent advantages compared with chemical deposition. It makes full use of the surface saturation reaction. During the atomic layer deposition process, the chemical reaction of a new layer of atoms It is directly associated with the previous layer, so that only one layer of atoms is deposited for each reaction, with high-precision controllability at the atomic level. ALD technology also has the characteristics of high conformality, and has gradually become an indispensable thin film deposition technology in the field of microelectronics information science. The ALD (PEALD) system with remote plasma source control is added, which increases the activity of the reaction source and expands the types of reaction source and deposited film. The clean gas flowing through the reaction chamber removes excess free radicals and reaction by-products, and can still avoid impurity interference without the need for ultimate vacuum.

The surface reaction in ALD technology is self-limiting, and the film grown in each cycle is only a single atomic layer. However, during the experiment, it was found that usually ALD can only deposit about 15-60% of a single atomic layer per layer. The deposition rate is much lower than the theoretical expectation of layer-by-layer growth in the form of ALD monoatomic layer film. The crystal orientation of the deposited film is random and uncontrollable, and the film quality is often a polycrystalline film with many defects, which is far from meeting the needs of integration. Circuit development requires material precision.

Contents of the invention

The embodiment of the present application provides a remote plasma atomic layer deposition system modulated by a variable electric field, which solves the problem that the film deposition rate in the prior art is much lower than the theoretical expectation, and the crystal orientation of the film obtained by atomic layer deposition is random and uncontrollable. The obtained thin film is mostly a problem of a polycrystalline thin film with many defects.

An embodiment of the present application provides a remote plasma atomic layer deposition system modulated by a variable electric field, comprising: a cavity; Coil; insulating ceramic assembly, the insulating ceramic assembly is located at the junction of the quartz tube and the cavity; an upper electrode disc, the upper electrode disc is located in the cavity; a lower electrode disc, the lower electrode disc is located In the cavity, an electric field is formed between the lower electrode disc and the upper electrode disc; an insulating pad, the insulating pad is located in the cavity, and the insulating pad is located between the cavity and the upper electrode disc room; a heating plate, the heating plate is located in the cavity; an insulating and heat-conducting layer, the insulating and heat-conducting layer is located in the cavity, and the insulating and heat-conducting layer is located between the lower electrode plate and the heating plate; power supply , the ground terminal of the power supply is connected to the cavity and grounded; the relay, the input terminal of the relay is connected to the positive and negative poles of the power supply, and the output terminal of the relay is respectively connected to the upper electrode plate, the Bottom electrode pad connection.

Preferably, the upper electrode disc has evenly distributed air intake holes.

Preferably, the relay is a vacuum ceramic relay.

Preferably, the withstand voltage range of the relay is 0-2000V.

Preferably, the relay realizes the setting of electric field size and polarity through software control.

Preferably, the voltage range of the power supply is 0-2000V.

Preferably, the insulating ceramic component is a detachable insulating ceramic ring.

Preferably, the insulating pad is a ceramic insulating pad.

Preferably, the insulating and heat-conducting layer is a ceramic disk.

One or more technical solutions provided in the embodiments of this application have at least the following technical effects or advantages:

1. In the embodiment of this application, by introducing a variable and uniform electric field whose size and polarity can be set arbitrarily in the reaction chamber, the dipole effect of the electric field on the polar precursor and the The electric field of the plasma reaction source can change the orientation distribution of the polar precursor and the motion direction and speed of the plasma, increase the adsorption and chemical reaction active sites on the substrate surface, and improve the chemical reactivity and film coverage of the substrate surface rate, and then achieve layered growth with atomic precision resolution of atomic layer deposition, and control the crystallization and doping characteristics of the film.

2. In the embodiment of the present application, the upper electrode disk has evenly distributed air inlet holes, so that the precursors entering the chamber are evenly distributed.

Description of drawings

In order to illustrate the technical solution in this embodiment more clearly, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings in the following description are an embodiment of the present invention. For Those of ordinary skill in the art can also obtain other drawings based on these drawings without making creative efforts.

Fig. 1 is a schematic structural diagram of a variable electric field modulated remote plasma atomic layer deposition system provided by an embodiment of the present invention;

Fig. 2 is a schematic structural diagram of an upper electrode disc provided by an embodiment of the present invention.

detailed description

The embodiment of the present application provides a remote plasma atomic layer deposition system modulated by a variable electric field, which solves the problem that the film deposition rate in the prior art is much lower than the theoretical expectation, and the crystal orientation of the film obtained by atomic layer deposition is random and uncontrollable. The obtained thin film is mostly a problem of a polycrystalline thin film with many defects.

The technical solution of the embodiment of the present application is to solve the above-mentioned technical problems, and the general idea is as follows:

A remote plasma atomic layer deposition system with variable electric field modulation. A variable uniform electric field with arbitrarily set size and polarity is introduced into the reaction chamber. The dipole effect on the plasma reaction source and the electric field effect on the plasma reaction source can change the orientation distribution of the polar precursor and the motion direction and speed of the plasma, increase the adsorption and chemical reaction active sites on the substrate surface, and improve the surface of the substrate. Chemical reactivity and film coverage, and then realize layered growth with atomic precision resolution of atomic layer deposition, and control the crystallization and doping characteristics of the film.

In order to better understand the above-mentioned technical solution, the above-mentioned technical solution will be described in detail below in conjunction with the accompanying drawings and specific implementation methods.

This embodiment provides a remote plasma atomic layer deposition system modulated by a variable electric field, as shown in Figure 1, comprising: a quartz tube 1; an insulating ceramic component 2; an insulating pad 3; an upper electrode plate 4; ; Lower electrode plate 6; insulation and heat conduction layer 7; heating plate 8; relay 9; power supply 10.

The quartz tube 1 is located directly above the cavity 5 , and a copper coil is wound around the quartz tube 1 for generating remote plasma by inductive coupling.

The insulating ceramic component 2 is located at the junction of the quartz tube 1 and the cavity 5, and is used to insulate the plasma generated by the quartz tube 1 from the cavity 5; the insulating ceramic component 2 is Removable insulating ceramic ring.

The upper electrode disk 4 and the lower electrode disk 6 are located in the cavity 5, an electric field is formed between the lower electrode disk 6 and the upper electrode disk 4, and the polar precursor and the plasma precursor are regulation.

Wherein, the upper electrode disc 4 has evenly distributed air inlet holes for evenly distributing the precursor entering the chamber. The substrate sample is placed on the surface of the lower electrode disc 4 .

The insulating pad 3 is located in the cavity 5, and the insulating pad 3 is located between the cavity 5 and the upper electrode disc 4, so that the upper electrode disc 4 is insulated from the cavity 5 ; The insulating pad 3 is a ceramic isolation pad.

The heating plate 8 is located in the cavity 5 .

The insulating and heat-conducting layer 7 is located in the cavity 5, and the insulating and heat-conducting layer 7 is located between the lower electrode plate 6 and the heating plate 8; the insulating and heat-conducting layer 7 is a ceramic plate.

The substrate sample to be deposited is placed on the lower electrode disk 6 .

The lower electrode disk 6 is isolated from the heating disk 8 by an insulating and heat-conducting ceramic disk. On the one hand, the insulating and heat-conducting layer 7 conducts heat to heat the substrate; on the other hand, it insulates the substrate from the heating plate 8 .

The cavity 5 is grounded.

The ground terminal of the power supply 10 is connected to the cavity 5 and grounded; the power supply 10 is used to apply an electric field to realize arbitrary switching of the polarity of the upper and lower electrodes, and the voltage range of the power supply 10 is 0-2000V.

The power supply 10 has a low-voltage control port, and the ground terminal of the power supply 10 is not connected to its own positive and negative terminals.

The input end of the relay 9 is connected to the positive and negative poles of the power supply 10 , and the output end of the relay 9 is respectively connected to the upper electrode disc 4 and the lower electrode disc 6 .

The relay 9 is a vacuum ceramic relay capable of withstanding a high voltage of 0-2000V, used to control and switch the positive and negative voltage and polarity, and can apply a voltage of -2000V-+2000V to the lower electrode plate 6 . The relay 9 is controlled by software to realize arbitrary setting of electric field size and polarity. Therefore, in the process of precursor gas intake, the dipole effect of the electric field on the polar precursor and the electric field effect on the plasma reaction source are used to change the orientation distribution of the polar precursor and the movement direction and speed of the plasma, Increase the adsorption and chemical reaction active sites on the substrate surface, improve the chemical reactivity and film coverage of the substrate surface, and then realize the layered growth of atomic layer deposition with atomic precision resolution, and control the crystallization and doping characteristics of the film.

A remote plasma atomic layer deposition system with variable electric field modulation provided by an embodiment of the present invention includes at least the following technical effects:

1. In the embodiment of this application, by introducing a variable and uniform electric field whose size and polarity can be set arbitrarily in the reaction chamber, the dipole effect of the electric field on the polar precursor and the The electric field of the plasma reaction source can change the orientation distribution of the polar precursor and the motion direction and speed of the plasma, increase the adsorption and chemical reaction active sites on the substrate surface, and improve the chemical reactivity and film coverage of the substrate surface rate, and then achieve layered growth with atomic precision resolution of atomic layer deposition, and control the crystallization and doping characteristics of the film.

2. In the embodiment of the present application, the upper electrode disk has evenly distributed air inlet holes, so that the precursors entering the chamber are evenly distributed.

Finally, it should be noted that the above specific embodiments are only used to illustrate the technical solutions of the present invention without limitation. Although the present invention has been described in detail with reference to examples, those of ordinary skill in the art should understand that the technical solutions of the present invention can be carried out Modifications or equivalent replacements without departing from the spirit and scope of the technical solutions of the present invention shall be covered by the claims of the present invention.

Claims (9)

1. the remote plasma atomic layer deposition system that a kind of variable electric field is modulated, it is characterised in that including：

Cavity；

Quartz ampoule, the quartz ampoule is located at the surface of the cavity, and the quartz ampoule is around with copper coil；

Insulating ceramics component, the insulating ceramics component is located at the junction of the quartz ampoule and the cavity；

Top electrode disk, the Top electrode disk is located in the cavity；

Bottom electrode disk, the bottom electrode disk is located in the cavity, and electricity is formed between the bottom electrode disk and the Top electrode disk ；

Felt pad, the felt pad is located in the cavity, and the felt pad is located between the cavity and the Top electrode disk；

Heating dish, the heating dish is located in the cavity；

Thermal insulation layer, the thermal insulation layer be located at the cavity in, the thermal insulation layer be located at the bottom electrode disk and Between the heating dish；

Power supply, the earth terminal of the power supply is connected and is grounded with the cavity；

Relay, the input of the relay is connected with the both positive and negative polarity of the power supply, the output end of the relay respectively with The Top electrode disk, bottom electrode disk connection.

2. the remote plasma atomic layer deposition system that variable electric field according to claim 1 is modulated, it is characterised in that The Top electrode dribbling has equally distributed air admission hole.

3. the remote plasma atomic layer deposition system that variable electric field according to claim 1 is modulated, it is characterised in that The relay is vacuum ceramic relay.

4. the remote plasma atomic layer deposition system that variable electric field according to claim 1 is modulated, it is characterised in that The pressure-resistant scope of the relay is 0~2000V.

5. the remote plasma atomic layer deposition system that variable electric field according to claim 1 is modulated, it is characterised in that The setting that the relay passes through software control realization electric field level and polarity.

6. the remote plasma atomic layer deposition system that variable electric field according to claim 1 is modulated, it is characterised in that The voltage range of the power supply is 0~2000V.

7. the remote plasma atomic layer deposition system that variable electric field according to claim 1 is modulated, it is characterised in that The insulating ceramics component is detachable insulating ceramics ring.

8. the remote plasma atomic layer deposition system that variable electric field according to claim 1 is modulated, it is characterised in that The felt pad is ceramic insulation blanket.

9. the remote plasma atomic layer deposition system that variable electric field according to claim 1 is modulated, it is characterised in that The thermal insulation layer is ceramic disk.