CN106625248A - High-flattening chemical mechanical grinding pad trimmer with large diamond monocrystals - Google Patents
High-flattening chemical mechanical grinding pad trimmer with large diamond monocrystals Download PDFInfo
- Publication number
- CN106625248A CN106625248A CN201710061770.0A CN201710061770A CN106625248A CN 106625248 A CN106625248 A CN 106625248A CN 201710061770 A CN201710061770 A CN 201710061770A CN 106625248 A CN106625248 A CN 106625248A
- Authority
- CN
- China
- Prior art keywords
- bitellos
- microns
- abrasive grains
- difference
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 13
- 239000010432 diamond Substances 0.000 title claims abstract description 13
- 238000000227 grinding Methods 0.000 title abstract description 13
- 239000000126 substance Substances 0.000 title abstract description 4
- 239000002245 particle Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000006061 abrasive grain Substances 0.000 claims description 35
- 238000005498 polishing Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 239000004575 stone Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 description 1
- BLOIXGFLXPCOGW-UHFFFAOYSA-N [Ti].[Sn] Chemical compound [Ti].[Sn] BLOIXGFLXPCOGW-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
The invention discloses a high-flattening chemical mechanical grinding pad trimmer with large diamond monocrystals. The high-flattening chemical mechanical grinding pad trimmer with the large diamond monocrystals comprises a substrate and a grinding particle layer, wherein the grinding particle layer comprises a plurality of large diamond grinding particles embedded into the substrate, the large diamond grinding particles have a particle size not less than 300 microns, a first difference is formed between the highest sharp points and the second-highest sharp points of the large diamond grinding particles and is smaller than or equal to 20 microns, and a second difference is formed between 1% of the highest sharp points of the large diamond grinding particles and is smaller than or equal to 80 microns.
Description
Technical field
The present invention relates to a kind of CMP pad dresser, espespecially a kind of high flat degree with bitellos monocrystalline
Learn mechanical lapping dresser.
Background technology
In the semiconductor industry, especially under the less and less development trend of current live width, the planarization step of crystal column surface
Rapid more crucial, current high-order processing procedure has reached using cmp technology global planarization effect comprehensively.
But because polishing pad constantly can be produced and rubbed with wafer in CMP step so that on polishing pad
Rill fades away, and cutting, reaction product of generation etc. all can gradually accumulate in polishing pad in CMP step
In the micro-grooves on surface, polishing pad passivation, blocking are easily caused, cause pad interface to deteriorate, easily wafer is produced and is lacked
Fall into, therefore, grinding mat trimmer (pad dresser) becomes cmp (CMP) processing procedure and maintains wafer planarization, then
The key of even property, to the finishing polishing pad of appropriateness, allows well polishing pad to recover the surface characteristic of script.
The content of the invention
In order to reach above-mentioned purpose, the present invention provides a kind of high flat degree chemical and mechanical grinding cushion with bitellos monocrystalline
Trimmer, it is characterised in that include：
One substrate；And
One abrasive grains layer, including the big diamond abrasive particle of a plurality of embedded substrates, bitellos abrasive grains tool
Have one not less than 300 microns of particle diameter, have one the between the 1st high cusp and secondary high cusp of the bitellos abrasive grains
One difference D1, first difference D1 is less than or equal to be had between 20 microns, and the cusp of the highest 1% of the bitellos abrasive grains
One second difference, the second difference system is less than or equal to 80 microns.
Therefore, compared to the CMP pad dresser of known techniques, present invention employs particle diameter micro- not less than 300
The bitellos abrasive grains of rice, compared to the trimmer of the less diamond abrasive particle of known particle diameter, the bitellos of the present invention grind
The overhang of abrasive particle can be with more, and the volume of sharp end is more, and the depth that abrasive grains imbed the substrate is also more, keep
Power preferably, therefore can significantly extend the service life of CMP pad dresser, and with preferably finishing performance；And,
The present invention is high with secondary by the 1st high cusp that the structure design of CMP pad dresser is the bitellos abrasive grains
There is one first difference, first difference is less than or equal to 20 microns, and the highest 1% of the bitellos abrasive grains between cusp
Cusp between have one second difference, the second difference system be less than or equal to 80 microns, also more conventional trimmer have more preferably
Flatness, can provide be more uniformly distributed, consistent and stable finishing performance.
Description of the drawings
Fig. 1 is the generalized section of one embodiment of the invention；
Wherein, 10, matrix；20th, abrasive grains layer；21st, bitellos abrasive grains；D1, the first difference.
Specific embodiment
Below, collocation schema is described in detail the present invention.
Fig. 1 is refer to, the present invention is a kind of high flat degree CMP pad dresser with bitellos monocrystalline, is wrapped
Include a substrate 10 and an abrasive grains layer 20, including the big diamond abrasive particle 21 of a plurality of embedded substrates 10, the wammel
Stone abrasive grains 21 have a particle diameter not less than 300 microns, highest (the 1st is high) protruding tip of the bitellos abrasive grains 21
There is one first difference D between secondary high protruding tip, first difference D is less than or equal to 20 microns, and the bitellos grinding
There is one second difference, in the present invention, the bitellos abrasive grains 21 are one natural between the protruding tip of highest 1% of particle 21
Or the monocrystalline diamond of synthesis.
In one of present invention embodiment, the particle diameter of the bitellos abrasive grains 21 is not less than 500 microns；In the present invention's
In another embodiment, the particle diameter of the bitellos abrasive grains 21 is between 500 microns to 800 microns.In the another of the present invention
In embodiment, first difference D is less than or equal to 10 microns, highest (the 1st is high) protruding tip of the bitellos abrasive grains 21
There is one the 3rd difference between the 10th high protruding tip, the 3rd difference is less than or equal to 20 microns, the bitellos grinding
Grain 21 highest (the 1st is high) between protruding tip and the 100th high protruding tip have one the 4th difference, the 4th difference be less than or
Equal to 40 microns.Additionally, highest (the 1st is high) the protruding tip system of the bitellos abrasive grains 21 projects above the substrate 10 and is more than
Or equal to 50 microns.The arrangement of the bitellos abrasive grains 21 or directionality can change according to demand, in the present invention, the wammel
The pattern arrangement of stone abrasive grains 21 can be array pattern, circular ring patterns, circular concentric ring patterns or spiral ring patterns.
In the present invention, the material of the substrate 10 can be Stainless Steel, and the bitellos abrasive grains 21 can pass through a binder course and consolidate
Due to the substrate 10, the binder course can be a solder layer, an electrodeposited coating, a sinter layer or a resin bed, the material of the solder layer
Copper, iron, tin, nickel, cobalt, nickel, chromium, manganese, silicon, aluminium, titanium, boron, phosphorus or aforementioned combinatorial are may include, for example, the solder layer can be Ni-based
Brazing metal, nickel cobalt (alloy) solder, copper and tin titanium alloy solder etc..In another embodiment, the resin bed can be epoxy resin.
In sum, compared to the CMP pad dresser of known techniques, present invention employs particle diameter and be not less than
300 microns of bitellos abrasive grains, compared to the trimmer of the less diamond abrasive particle of known particle diameter, the wammel of the present invention
The overhang of stone abrasive grains can be with more, and the volume of sharp end is more, and the depth that abrasive grains imbed the substrate is also more,
Therefore can significantly extend the service life of CMP pad dresser, and repair performance with more preferable；And, the present invention will
The structure design of CMP pad dresser is between the 1st high cusp and secondary high cusp of the bitellos abrasive grains
With one first difference, first difference is less than or equal between 20 microns, and the cusp of the highest 1% of the bitellos abrasive grains
With one second difference, the second difference system is that, less than or equal to 80 microns, also more conventional trimmer has more preferably flatness,
Energy offer is more uniformly distributed, consistent and stable finishing performance.
Above-described embodiment is illustrated only for conveniently explanation, and the interest field that the present invention is advocated should be wanted with right certainly
Ask described to be defined, rather than be only limitted to above-described embodiment.
Claims (7)
1. a kind of high flat degree CMP pad dresser with bitellos monocrystalline, it is characterised in that include：
One substrate；And
One abrasive grains layer, including the big diamond abrasive particle of a plurality of embedded substrates, the bitellos abrasive grains have one
Particle diameter not less than 300 microns, it is poor with one first between the 1st high cusp and secondary high cusp of the bitellos abrasive grains
Different, first difference is less than or equal to poor with one second between 20 microns, and the cusp of the highest 1% of the bitellos abrasive grains
Different, the second difference system is less than or equal to 80 microns.
2. there is as claimed in claim 1 the high flat degree CMP pad dresser of bitellos monocrystalline, its feature exists
In the particle diameter of the bitellos abrasive grains is not less than 500 microns.
3. there is as claimed in claim 2 the high flat degree CMP pad dresser of bitellos monocrystalline, its feature exists
In the particle diameter of the bitellos abrasive grains is between 500 microns to 800 microns.
4. there is as claimed in claim 1 the high flat degree CMP pad dresser of bitellos monocrystalline, its feature exists
In first difference is less than or equal to 10 microns.
5. there is as claimed in claim 1 the high flat degree CMP pad dresser of bitellos monocrystalline, its feature exists
In, there is one the 3rd difference between the 1st high cusp of the bitellos abrasive grains and the 10th high cusp, the 3rd difference is little
In or equal to 20 microns.
6. there is as claimed in claim 1 the high flat degree CMP pad dresser of bitellos monocrystalline, its feature exists
In, with one the 4th difference between the 1st high cusp of the bitellos abrasive grains and the 100th high cusp, the 4th difference
Less than or equal to 40 microns.
7. there is as claimed in claim 1 the high flat degree CMP pad dresser of bitellos monocrystalline, its feature exists
In the projecting height of the high cusp of bitellos abrasive grains the 1st is more than 50 microns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710061770.0A CN106625248A (en) | 2017-01-26 | 2017-01-26 | High-flattening chemical mechanical grinding pad trimmer with large diamond monocrystals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710061770.0A CN106625248A (en) | 2017-01-26 | 2017-01-26 | High-flattening chemical mechanical grinding pad trimmer with large diamond monocrystals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106625248A true CN106625248A (en) | 2017-05-10 |
Family
ID=58841462
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710061770.0A Pending CN106625248A (en) | 2017-01-26 | 2017-01-26 | High-flattening chemical mechanical grinding pad trimmer with large diamond monocrystals |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106625248A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111203800A (en) * | 2020-02-20 | 2020-05-29 | 长江存储科技有限责任公司 | Grinding pad dresser and chemical mechanical grinding equipment |
| CN116619246A (en) * | 2023-07-24 | 2023-08-22 | 北京寰宇晶科科技有限公司 | CMP polishing pad trimmer with diamond columnar crystal clusters and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW450867B (en) * | 1998-02-11 | 2001-08-21 | Applied Materials Inc | Improved end effector for pad conditioning |
| JP2007152493A (en) * | 2005-12-05 | 2007-06-21 | Ebara Corp | Polishing pad dresser and its manufacturing method |
| CN101039775A (en) * | 2004-09-29 | 2007-09-19 | 宋健民 | Chemical Mechanical Polishing Pad Dresser with Oriented Particles and Related Methods |
| CN203380772U (en) * | 2013-04-08 | 2014-01-08 | 宋健民 | Chemical mechanical polishing dresser |
| CN203622204U (en) * | 2013-12-09 | 2014-06-04 | 中芯国际集成电路制造(北京)有限公司 | Grinding pad adjuster |
-
2017
- 2017-01-26 CN CN201710061770.0A patent/CN106625248A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW450867B (en) * | 1998-02-11 | 2001-08-21 | Applied Materials Inc | Improved end effector for pad conditioning |
| CN101039775A (en) * | 2004-09-29 | 2007-09-19 | 宋健民 | Chemical Mechanical Polishing Pad Dresser with Oriented Particles and Related Methods |
| JP2007152493A (en) * | 2005-12-05 | 2007-06-21 | Ebara Corp | Polishing pad dresser and its manufacturing method |
| CN203380772U (en) * | 2013-04-08 | 2014-01-08 | 宋健民 | Chemical mechanical polishing dresser |
| CN203622204U (en) * | 2013-12-09 | 2014-06-04 | 中芯国际集成电路制造(北京)有限公司 | Grinding pad adjuster |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111203800A (en) * | 2020-02-20 | 2020-05-29 | 长江存储科技有限责任公司 | Grinding pad dresser and chemical mechanical grinding equipment |
| CN111203800B (en) * | 2020-02-20 | 2021-11-05 | 长江存储科技有限责任公司 | Grinding pad dresser and chemical mechanical grinding equipment |
| CN116619246A (en) * | 2023-07-24 | 2023-08-22 | 北京寰宇晶科科技有限公司 | CMP polishing pad trimmer with diamond columnar crystal clusters and preparation method thereof |
| CN116619246B (en) * | 2023-07-24 | 2023-11-10 | 北京寰宇晶科科技有限公司 | CMP polishing pad trimmer with diamond columnar crystal clusters and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170510 |