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CN106569040B - Single Event Transient Pulse Width Measurement Circuits, Integrated Circuits and Electronic Devices - Google Patents

Single Event Transient Pulse Width Measurement Circuits, Integrated Circuits and Electronic Devices Download PDF

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CN106569040B
CN106569040B CN201610971907.1A CN201610971907A CN106569040B CN 106569040 B CN106569040 B CN 106569040B CN 201610971907 A CN201610971907 A CN 201610971907A CN 106569040 B CN106569040 B CN 106569040B
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delay
latch
latch circuit
stage
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CN106569040A (en
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宿晓慧
罗家俊
韩郑生
刘海南
郝乐
李欣欣
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Ruili Flat Core Microelectronics Guangzhou Co Ltd
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Institute of Microelectronics of CAS
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/02Measuring characteristics of individual pulses, e.g. deviation from pulse flatness, rise time or duration
    • G01R29/023Measuring pulse width
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/0948Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors

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  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Tests Of Electronic Circuits (AREA)

Abstract

本发明涉及电脉冲宽度测量技术领域,涉及一种单粒子瞬态脉冲宽度测量电路包括锁存电路的输入端与待测信号输入端连接;至少一级延迟锁存电路中的第一级延迟锁存电路的第一输入端和第二输入端均与待测信号输入端连接;当单粒子瞬态脉冲宽度测量电路包含二级以上的延迟锁存电路时,从第二级延迟锁存电路开始每级延迟锁存电路的第一输入端与前一级延迟锁存电路的第一输出端连接,每级延迟锁存电路的第二输入端与待测信号输入端连接;在待测信号输入端接入待测单粒子瞬态脉冲信号后,锁存电路翻转驱动至少一级延迟锁存电路翻转,将锁存电路的输出端和至少一级延迟锁存电路中各个延迟锁存电路的第二输出端作为单粒子瞬态脉冲宽度测量电路的信号输出端。

The invention relates to the technical field of electrical pulse width measurement, and relates to a single-particle transient pulse width measurement circuit. The input terminal of a latch circuit is connected to the input terminal of a signal to be measured; Both the first input terminal and the second input terminal of the storage circuit are connected to the input terminal of the signal to be measured; when the single-event transient pulse width measurement circuit includes two or more delay latch circuits, start from the second-level delay latch circuit The first input end of the delay latch circuit of each stage is connected to the first output end of the delay latch circuit of the previous stage, and the second input end of the delay latch circuit of each stage is connected to the input end of the signal to be measured; After the terminal is connected to the single-event transient pulse signal to be tested, the latch circuit flips and drives the at least one stage delay latch circuit to flip over, and the output terminal of the latch circuit and the first stage of each delay latch circuit in the at least one stage delay latch circuit are flipped. The two output terminals are used as the signal output terminal of the single-particle transient pulse width measurement circuit.

Description

单粒子瞬态脉冲宽度测量电路、集成电路和电子设备Single Event Transient Pulse Width Measurement Circuits, Integrated Circuits and Electronic Devices

技术领域technical field

本发明涉及电脉冲宽度测量技术领域,尤其涉及单粒子瞬态脉冲宽度测量电路、集成电路和电子设备。The invention relates to the technical field of electrical pulse width measurement, in particular to a single-particle transient pulse width measurement circuit, an integrated circuit and an electronic device.

背景技术Background technique

随着航天、军事等领域技术的发展,越来越多的集成电路需要在辐射环境下工作。辐射对集成电路的效应主要分为两大类:单粒子效应和总剂量效应,总剂量效应是集成电路长期处在辐射环境中辐射效果积累所产生的效应,单粒子效应是辐射能量粒子进入集成电路后辐射效果即时作用所产生的效应。其中单粒子效应可细分为以下三类:单粒子软错误效应、具有潜在危险性的效应和单粒子硬错误效应。With the development of technology in aerospace, military and other fields, more and more integrated circuits need to work in a radiation environment. The effects of radiation on integrated circuits are mainly divided into two categories: single-event effects and total dose effects. The effect produced by the immediate effect of the radiation effect after the circuit. The single event effects can be subdivided into the following three categories: single event soft error effects, potentially dangerous effects and single event hard error effects.

其中,单粒子软错误效应包括单粒子反转效应,单粒子瞬变效应,单粒子多翻转效应等,其能够在短时间内对电路节点产生干扰。具有潜在危险性的效应包括单粒子闩锁效应等,如不加以控制,可能会导致芯片发生单粒子烧毁。单粒子硬错误效应包括位移损伤等,其会使得芯片中的晶体管彻底不能工作。而,单粒子瞬变效应是常见的影响芯片性能的主要因素,当芯片放置在有辐射的环境中,周围能量粒子会注入到芯片内部,通过电离辐射能量粒子的运动轨迹上产生一定数目的电子、空穴对,它们在电场的作用下被电路节点吸收,改变节点电平,如果没有反馈回路,那么当单粒子作用的时间结束后,该节点电平又会恢复回原来的值,从而在电路中产生一个脉冲信号。Among them, the single-event soft error effects include single-event inversion effects, single-event transient effects, single-event multi-flipping effects, etc., which can interfere with circuit nodes in a short time. Potentially dangerous effects include single-event latch-up, which, if not controlled, can lead to single-event burnout of the chip. Single event hard error effects include displacement damage, etc., which can completely disable the transistors in the chip. However, the single-event transient effect is a common main factor affecting the performance of the chip. When the chip is placed in a radiation environment, the surrounding energy particles will be injected into the chip, and a certain number of electrons will be generated on the trajectory of the ionizing radiation energy particles. , hole pairs, they are absorbed by the circuit node under the action of the electric field, changing the node level, if there is no feedback loop, then when the single-particle action time ends, the node level will return to the original value, so that in the A pulse signal is generated in the circuit.

对于单粒子效应进行研究与加固,必须搭建有效的测试环境,对瞬态脉冲信号宽度等特征进行准确测量。其中,测试环境往往选择地面辐照实验,通过模拟产生宇宙射线粒子对待测芯片进行轰击试验,模拟真实的宇宙空间辐射环境。在对脉冲信号宽度进行测量时,根据入射粒子种类能量等不同,产生的单粒子脉冲信号电平维持时间也不同,脉冲宽度可以从几十ps到一千ps以上。For the research and reinforcement of the single event effect, an effective test environment must be built to accurately measure the characteristics such as the width of the transient pulse signal. Among them, the test environment often chooses the ground irradiation experiment, which simulates the real cosmic space radiation environment by bombarding the chip to be tested by simulating the generation of cosmic ray particles. When measuring the pulse signal width, depending on the type and energy of the incident particles, the generated single-particle pulse signal level maintenance time is also different, and the pulse width can range from tens of ps to more than a thousand ps.

如果采用传统的示波器或逻辑分析仪等检测设备测量单粒子瞬态脉冲宽度,对设备的频率要求非常高,测试成本高,实现难度非常大。如果采用片上电路进行测试,现有的脉冲宽度测量方法往往通过外部输入高频信号对脉冲信号采样来进行测量,捕获精度将受到采样信号的频率和性能限制,由于实际测试中难以提供频率极高、波形特点又十分优良的采样信号,因此,可测范围小。If a traditional oscilloscope or logic analyzer and other testing equipment is used to measure the single-event transient pulse width, the frequency requirements of the equipment are very high, the testing cost is high, and the implementation is very difficult. If the on-chip circuit is used for testing, the existing pulse width measurement methods often measure the pulse signal by sampling the pulse signal by externally inputting a high-frequency signal, and the capture accuracy will be limited by the frequency and performance of the sampling signal. , The waveform characteristics are very good sampling signal, therefore, the measurable range is small.

发明内容SUMMARY OF THE INVENTION

本发明通过提供单粒子瞬态脉冲宽度测量电路、集成电路和电子设备,解决了现有技术中单粒子瞬态脉冲宽度测量电路的可测范围小的技术问题。The invention solves the technical problem of the small measurable range of the single-particle transient pulse width measuring circuit in the prior art by providing a single-particle transient pulse width measuring circuit, an integrated circuit and an electronic device.

本发明实施例提供了一种单粒子瞬态脉冲宽度测量电路,包括待测信号输入端、锁存电路和至少一级延迟锁存电路;The embodiment of the present invention provides a single-event transient pulse width measurement circuit, including a signal input end to be measured, a latch circuit and at least one stage of delay latch circuit;

所述锁存电路的输入端与所述待测信号输入端连接;The input end of the latch circuit is connected to the input end of the signal to be measured;

所述至少一级延迟锁存电路中的第一级延迟锁存电路的第一输入端和第二输入端均与所述待测信号输入端连接;Both the first input terminal and the second input terminal of the first-stage delay latch circuit in the at least one-stage delay latch circuit are connected to the input terminal of the signal to be tested;

当所述单粒子瞬态脉冲宽度测量电路包含二级以上的延迟锁存电路时,从第二级延迟锁存电路开始,每级延迟锁存电路的第一输入端与前一级延迟锁存电路的第一输出端连接,每级延迟锁存电路的第二输入端与所述待测信号输入端连接;When the single-event transient pulse width measurement circuit includes more than two stages of delay latch circuits, starting from the second stage of delay latch circuits, the first input end of each stage of delay latch circuits is connected to the previous stage of delay latch circuits. The first output end of the circuit is connected, and the second input end of each stage of the delay latch circuit is connected to the input end of the signal to be measured;

其中,在所述待测信号输入端接入待测单粒子瞬态脉冲信号后,所述待测单粒子瞬态脉冲信号驱动至少一级延迟锁存电路顺次发生翻转,将所述锁存电路的输出端和所述至少一级延迟锁存电路中各个延迟锁存电路的第二输出端作为所述单粒子瞬态脉冲宽度测量电路的信号输出端。Wherein, after the single-event transient pulse signal to be tested is connected to the input end of the signal to be tested, the single-event transient pulse signal to be tested drives at least one stage of the delay latch circuit to flip in sequence, and the latch The output end of the circuit and the second output end of each delay latch circuit in the at least one-stage delay latch circuit are used as the signal output end of the single-event transient pulse width measurement circuit.

优选的,所述锁存电路为两输入RS锁存器,所述两输入RS锁存器的置位输入端与所述待测信号输入端连接。Preferably, the latch circuit is a two-input RS latch, and the set input terminal of the two-input RS latch is connected to the input terminal of the signal to be measured.

优选的,所述延迟锁存电路包括延迟子电路和锁存子电路,所述延迟子电路的输出端与所述锁存子电路的第一置位输入端连接,所述锁存子电路的第二置位输入端与所述的待测信号输入端连接。Preferably, the delay latch circuit includes a delay sub-circuit and a latch sub-circuit, an output end of the delay sub-circuit is connected to a first set input end of the latch sub-circuit, and an output end of the latch sub-circuit is connected to the first set input end of the latch sub-circuit. The second set input terminal is connected with the said input terminal of the signal to be tested.

优选的,所述延迟子电路由偶数级反向器级联构成。Preferably, the delay subcircuit is composed of even-numbered inverters in cascade.

优选的,所述锁存子电路为三输入RS锁存器。Preferably, the latch subcircuit is a three-input RS latch.

优选的,所述锁存电路的复位端和所有延迟锁存电路的复位端接入同一复位信号。Preferably, the reset terminal of the latch circuit and the reset terminals of all delay latch circuits are connected to the same reset signal.

基于同一发明构思,本发明实施例还提供了一种集成电路,包括如上所述的单粒子瞬态脉冲宽度测量电路。Based on the same inventive concept, an embodiment of the present invention also provides an integrated circuit, including the single-event transient pulse width measurement circuit as described above.

基于同一发明构思,本发明实施例还提供了一种电子设备,包括如上所述的集成电路。Based on the same inventive concept, an embodiment of the present invention further provides an electronic device, including the above-mentioned integrated circuit.

本发明实施例中的一个或多个技术方案,至少具有如下技术效果或优点:One or more technical solutions in the embodiments of the present invention have at least the following technical effects or advantages:

在本发明中,在待测信号输入端接入待测单粒子瞬态脉冲信号后,待测单粒子瞬态脉冲信号驱动至少一级延迟锁存电路顺次发生翻转,将锁存电路的输出端和至少一级延迟锁存电路中各个延迟锁存电路的输出端作为单粒子瞬态脉冲宽度测量电路的信号输出端,根据各个信号输出端的电平的高低,能够反推出待测单粒子瞬态脉冲信号的脉冲宽度,通过增加延迟锁存电路的级数即可扩大测量信号的范围,测量范围广,并且,通过改变延迟锁存电路的延迟时间,即可调节对应各级的测试精度,满足不同级延迟锁存电路的不同测试要求,另外,本发明不需要外部输入时钟信号,所以没有对外部输入时钟信号的要求。In the present invention, after the single-event transient pulse signal to be tested is connected to the input end of the signal to be tested, the single-event transient pulse signal to be tested drives the at least one stage of the delay latch circuit to be reversed in sequence, and the output of the latch circuit is reversed. The terminal and the output terminals of each delay latch circuit in the at least one-stage delay latch circuit are used as the signal output terminal of the single-event transient pulse width measurement circuit. The pulse width of the state pulse signal can be expanded by increasing the number of stages of the delay latch circuit. It can meet the different test requirements of different stages of delay latch circuits. In addition, the present invention does not need an external input clock signal, so there is no requirement for an external input clock signal.

附图说明Description of drawings

为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据提供的附图获得其他的附图。In order to explain the embodiments of the present invention or the technical solutions in the prior art more clearly, the following briefly introduces the accompanying drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only It is an embodiment of the present invention. For those of ordinary skill in the art, other drawings can also be obtained according to the provided drawings without creative work.

图1为本发明第一个实施例中单粒子瞬态脉冲宽度测量电路的电路结构示意图;1 is a schematic diagram of the circuit structure of a single-particle transient pulse width measurement circuit in a first embodiment of the present invention;

图2为本发明第二个实施例中单粒子瞬态脉冲宽度测量电路的电路结构示意图;2 is a schematic diagram of the circuit structure of a single-particle transient pulse width measurement circuit in a second embodiment of the present invention;

图3为本发明实施例中单粒子瞬态脉冲宽度测量电路工作时的波形示意图;3 is a schematic diagram of a waveform when a single-particle transient pulse width measurement circuit works in an embodiment of the present invention;

图4为本发明实施例中两输入RS锁存器的电路结构示意图;4 is a schematic diagram of a circuit structure of a two-input RS latch in an embodiment of the present invention;

图5为本发明实施例中三输入RS锁存器的电路结构示意图;5 is a schematic diagram of a circuit structure of a three-input RS latch in an embodiment of the present invention;

图6为本发明实施例中延迟子电路的电路结构示意图。FIG. 6 is a schematic diagram of a circuit structure of a delay subcircuit in an embodiment of the present invention.

其中,100为锁存电路,101为延迟锁存电路,1011为锁存子电路,1012为延迟子电路,11为第一PMOS管,12为第二PMOS管,13为第三PMOS管,14为第四PMOS管,15为第五PMOS管,16为第六PMOS管,17为第七PMOS管,18为第八PMOS管,19为第九PMOS管,21为第一NMOS管,22为第二NMOS管,23为第三NMOS管,24为第四NMOS管,25为第五NMOS管,26为第六NMOS管,27为第七NMOS管,28为第八NMOS管,29为第九NMOS管,31为第十PMOS管,32为第十一PMOS管,41为第十NMOS管,42为第十一NMOS管。Among them, 100 is a latch circuit, 101 is a delay latch circuit, 1011 is a latch sub-circuit, 1012 is a delay sub-circuit, 11 is the first PMOS tube, 12 is the second PMOS tube, 13 is the third PMOS tube, 14 is the fourth PMOS tube, 15 is the fifth PMOS tube, 16 is the sixth PMOS tube, 17 is the seventh PMOS tube, 18 is the eighth PMOS tube, 19 is the ninth PMOS tube, 21 is the first NMOS tube, 22 is the The second NMOS tube, 23 is the third NMOS tube, 24 is the fourth NMOS tube, 25 is the fifth NMOS tube, 26 is the sixth NMOS tube, 27 is the seventh NMOS tube, 28 is the eighth NMOS tube, and 29 is the first NMOS tube Nine NMOS transistors, 31 is the tenth PMOS transistor, 32 is the eleventh PMOS transistor, 41 is the tenth NMOS transistor, and 42 is the eleventh NMOS transistor.

具体实施方式Detailed ways

为解决现有技术中单粒子瞬态脉冲宽度测量电路的可测范围小的技术问题,本发明提供单粒子瞬态脉冲宽度测量电路、集成电路和电子设备。In order to solve the technical problem of the small measurable range of the single-event transient pulse width measuring circuit in the prior art, the present invention provides a single-event transient pulse width measuring circuit, an integrated circuit and an electronic device.

为使本发明实施例的目的、技术方案和优点更加清楚,下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。In order to make the purposes, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments These are some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

本发明实施例提供一种单粒子瞬态脉冲宽度测量电路,如图1所示,该单粒子瞬态脉冲宽度测量电路包括包括待测信号输入端、锁存电路100和至少一级延迟锁存电路101。锁存电路100的输入端与待测信号输入端连接,至少一级延迟锁存电路101中的第一级延迟锁存电路的第一输入端和第二输入端均与待测信号输入端连接,当单粒子瞬态脉冲宽度测量电路包含二级以上的延迟锁存电路101时,从第二级延迟锁存电路开始,每级延迟锁存电路的第一输入端与前一级延迟锁存电路101的第一输出端连接,每级延迟锁存电路的第二输入端与待测信号输入端连接。An embodiment of the present invention provides a single-event transient pulse width measurement circuit. As shown in FIG. 1 , the single-event transient pulse width measurement circuit includes a signal input terminal to be measured, a latch circuit 100 and at least one stage of delay latch circuit 101. The input end of the latch circuit 100 is connected to the input end of the signal to be tested, and the first input end and the second input end of the first stage of the delay latch circuit in at least one stage of the delay latch circuit 101 are both connected to the input end of the signal to be tested , when the single-event transient pulse width measurement circuit includes more than two stages of delay latch circuits 101, starting from the second stage of the delay latch circuit, the first input end of each stage of the delay latch circuit is connected to the previous stage of the delay latch circuit The first output end of the circuit 101 is connected, and the second input end of each stage of the delay latch circuit is connected to the input end of the signal to be tested.

在本发明中,在待测信号输入端接入待测单粒子瞬态脉冲信号后,待测单粒子瞬态脉冲信号驱动至少一级延迟锁存电路101顺次发生翻转,将锁存电路100的输出端和至少一级延迟锁存电路101中各个延迟锁存电路101的第二输出端作为所述单粒子瞬态脉冲宽度测量电路的信号输出端。根据各个信号输出端的电平的高低,能够反推出待测单粒子瞬态脉冲信号的脉冲宽度,其中,本领域技术人员可以根据实际测量需求设置延迟锁存电路101的级数,延迟锁存电路101的级数越大,测量信号的范围也越大,并且,通过改变延迟锁存电路101的延迟时间,即可调节对应各级的测试精度,满足不同级延迟锁存电路101的不同测试要求,另外,本发明不需要外部输入时钟信号,所以没有对外部输入时钟信号的要求。In the present invention, after the single-event transient pulse signal to be tested is connected to the input terminal of the signal to be tested, the single-event transient pulse signal to be tested drives at least one stage of the delay latch circuit 101 to flip in sequence, and the latch circuit 100 The output terminal of , and the second output terminal of each delay latch circuit 101 in at least one stage of delay latch circuit 101 are used as the signal output terminal of the single-event transient pulse width measurement circuit. According to the level of each signal output terminal, the pulse width of the single-event transient pulse signal to be measured can be inversely deduced. Those skilled in the art can set the number of stages of the delay latch circuit 101 according to the actual measurement requirements, and the delay latch circuit The larger the number of stages of 101, the larger the range of the measurement signal, and by changing the delay time of the delay latch circuit 101, the test accuracy of the corresponding stage can be adjusted to meet the different test requirements of the delay latch circuit 101 of different stages , In addition, the present invention does not require an external input clock signal, so there is no requirement for an external input clock signal.

在本发明的一种具体实施方式中,如图2所示,锁存电路100可以为两输入RS锁存器,两输入RS锁存器包括置位输入端(S端)、复位输入端(R端)、Q输出端和输出端,两输入RS锁存器的置位输入端与待测信号输入端连接,锁存电路100的Q输出端为单粒子瞬态脉冲宽度测量电路的信号输出端。In a specific embodiment of the present invention, as shown in FIG. 2 , the latch circuit 100 may be a two-input RS latch, and the two-input RS latch includes a set input terminal (S terminal), a reset input terminal ( R terminal), Q output terminal and The output end, the set input end of the two-input RS latch is connected to the input end of the signal to be measured, and the Q output end of the latch circuit 100 is the signal output end of the single-event transient pulse width measurement circuit.

本发明中的延迟锁存电路101包括延迟子电路1012和锁存子电路1011。第一级延迟锁存电路的延迟子电路1012的输入端与待测信号输入端连接,第一级延迟锁存电路的延迟子电路1012的输出端与第一级延迟锁存电路的锁存子电路1011的第一输入端连接,第一级延迟锁存电路的锁存子电路1011的第二输入端与所述待测信号输入端连接。从第二级延迟锁存电路开始,延迟锁存电路101的延迟子电路1012的输入端与前一级延迟锁存电路101的延迟子电路1012的输出端连接,每级延迟锁存电路的延迟子电路1012的输出端与该级延迟锁存电路101的锁存子电路1011的第一输入端连接,每级延迟锁存电路的的锁存子电路1011的第二输入端与所述待测信号输入端连接。The delay latch circuit 101 in the present invention includes a delay sub-circuit 1012 and a latch sub-circuit 1011 . The input end of the delay sub-circuit 1012 of the first-stage delay latch circuit is connected to the input end of the signal to be tested, and the output end of the delay sub-circuit 1012 of the first-stage delay latch circuit is connected to the latch sub-circuit of the first-stage delay latch circuit. The first input end of the circuit 1011 is connected, and the second input end of the latch sub-circuit 1011 of the first stage delay latch circuit is connected to the input end of the signal to be tested. Starting from the second stage delay latch circuit, the input end of the delay subcircuit 1012 of the delay latch circuit 101 is connected to the output end of the delay subcircuit 1012 of the previous stage delay latch circuit 101, and the delay of each stage delay latch circuit is The output end of the sub-circuit 1012 is connected to the first input end of the latch sub-circuit 1011 of the delay latch circuit 101 of this stage, and the second input end of the latch sub-circuit 1011 of the delay latch circuit of each stage is connected to the Signal input connection.

进一步,锁存子电路1011可以为三输入RS锁存器,三输入RS锁存器包括第一置位输入端(S1端)、第二置位输入端(S2端)、复位输入端(R端)、Q输出端和输出端。具体的,该三输入RS锁存器为三输入或非门基本RS锁存器。三输入RS锁存器具有两个稳定状态,在输入信号维持足够长的时间的情况下,三输入RS锁存器能够从一个稳定状态翻转到另一个稳定状态,输出信号电平发生变化。例如,当三输入RS锁存器的三个输入端的输入信号发生变化,并维持足够长时间,将引起三输入RS锁存器的输出电平发生变化,具体的,当三输入RS锁存器的第一置位输入端和第二置位输入端不全为高电平时,三输入RS锁存器的Q输出端为低电平,输出端为高电平,当三输入RS锁存器的复位输入端为低电平、第一置位输入端和第二置位输入端均为高电平时,Q输出端为高电平,输出端为低电平,当三输入RS锁存器的的复位输入端为低电平、第一置位输入端和第二置位输入端不全为高电平时,Q输出端和输出端电平保持不变。Further, the latch sub-circuit 1011 may be a three-input RS latch, and the three-input RS latch includes a first set input terminal (S1 terminal), a second set input terminal (S2 terminal), and a reset input terminal (R terminal), Q output and output. Specifically, the three-input RS latch is a three-input NOR gate basic RS latch. The three-input RS latch has two stable states. Under the condition that the input signal is maintained for a long enough time, the three-input RS latch can flip from one stable state to another stable state, and the output signal level changes. For example, when the input signals of the three input terminals of the three-input RS latch change and maintain for a long enough time, the output level of the three-input RS latch will change. Specifically, when the three-input RS latch changes When the first set input and the second set input are not all high, the Q output of the three-input RS latch is low, The output terminal is high level, when the reset input terminal of the three-input RS latch is low level, and the first set input terminal and the second set input terminal are both high level, the Q output terminal is high level, The output terminal is low level. When the reset input terminal of the three-input RS latch is low level, and the first set input terminal and the second set input terminal are not all high level, the Q output terminal and the second set input terminal are not high level. The output level remains unchanged.

进一步,第一级延迟锁存电路的延迟子电路1012的输入端与待测信号输入端连接,第一级延迟锁存电路的延迟子电路1012的输出端与第一级延迟锁存电路的锁存子电路1011的第一置位输入端连接,第一级延迟锁存电路的锁存子电路1011的第二置位输入端与待测信号输入端连接。从第二级延迟锁存电路开始,每级延迟锁存电路的延迟子电路1012的输入端与前一级延迟锁存电路101的延迟子电路1012的输出端连接,每级延迟锁存电路的延迟子电路1012的输出端与该级延迟锁存电路101的锁存子电路1011的第一置位输入端连接,每级延迟锁存电路的的锁存子电路1011的第二置位输入端与待测信号输入端连接。将锁存电路100的Q输出端和至少一级延迟锁存电路101中各个锁存子电路1011的Q输出端作为单粒子瞬态脉冲测量电路的信号输出端。在本发明中,延迟子电路1012可以由偶数级反向器级联构成。Further, the input end of the delay sub-circuit 1012 of the first-stage delay latch circuit is connected to the input end of the signal to be tested, and the output end of the delay sub-circuit 1012 of the first-stage delay latch circuit is connected to the lock of the first-stage delay latch circuit The first set input terminal of the storage sub-circuit 1011 is connected, and the second set input terminal of the latch sub-circuit 1011 of the first stage delay latch circuit is connected to the input terminal of the signal to be tested. Starting from the second stage delay latch circuit, the input end of the delay subcircuit 1012 of each stage delay latch circuit is connected to the output end of the delay subcircuit 1012 of the previous stage delay latch circuit 101. The output terminal of the delay sub-circuit 1012 is connected to the first set input terminal of the latch sub-circuit 1011 of the delay latch circuit 101 of the stage, and the second set input terminal of the latch sub-circuit 1011 of the delay latch circuit of each stage is connected Connect to the input terminal of the signal to be tested. The Q output terminal of the latch circuit 100 and the Q output terminal of each latch sub-circuit 1011 in the at least one stage delay latch circuit 101 are used as the signal output terminal of the single event transient pulse measurement circuit. In the present invention, the delay sub-circuit 1012 may be composed of even-numbered inverters in cascade.

在本发明中,为保证锁存电路100和延迟锁存电路101在待测单粒子瞬态脉冲信号变化前能够维持稳定的状态,锁存电路100的复位端和所有延迟锁存电路101的复位端接入同一复位信号,即,RESET,所有锁存电路100在统一的RESET下复位。In the present invention, in order to ensure that the latch circuit 100 and the delay latch circuit 101 can maintain a stable state before the single event transient pulse signal to be tested changes, the reset terminal of the latch circuit 100 and the reset terminal of all the delay latch circuits 101 are reset. The same reset signal, ie, RESET, is connected to the terminal, and all the latch circuits 100 are reset under the unified RESET.

下面本发明将结合一具体输入信号,对本发明的单粒子瞬态脉冲宽度测量电路的工作原理进行详细说明,其中,单粒子瞬态脉冲宽度测量电路包括3级延迟锁存电路101,input为待测单粒子瞬态脉冲信号,out1为锁存电路100的输出端输出的信号,out2为第一级延迟锁存电路的输出端输出的信号,out3为第二级延迟锁存电路的输出端输出的信号,out4为第三级延迟锁存电路101的输出端输出的信号,单粒子瞬态脉冲宽度测量电路中各信号的工作波形参见图3。In the following, the present invention will describe in detail the working principle of the single-event transient pulse width measurement circuit of the present invention in combination with a specific input signal, wherein the single-event transient pulse width measurement circuit includes a three-stage delay latch circuit 101, and the input is to be To measure the single-event transient pulse signal, out1 is the signal output by the output terminal of the latch circuit 100, out2 is the signal output by the output terminal of the first stage delay latch circuit, and out3 is the output terminal output of the second stage delay latch circuit , and out4 is the signal output by the output end of the third-stage delay latch circuit 101 , and the working waveform of each signal in the single-event transient pulse width measurement circuit is shown in FIG. 3 .

具体来讲,在工作过程中,初始状态下,所有锁存电路100在统一的RESET下复位,此时待测信号输入端输入的input为低电平,所有锁存电路100的复位端输入的信号为高电平,所有锁存电路100的输出端输出的信号为0,即,out1、out2、out3、out4和out5均为0。在t=20.5ns时,input保持低电平不变,RESET变为低电平,此时所有锁存电路100输出的信号保持不变,即,out1、out2、out3、out4和out5均为0。在t=50ns时,input产生一个脉宽为200ps的高电平脉冲,通过仿真可知,该高电平脉冲足以驱动锁存电路100翻转,使得out1变为高电平。Specifically, in the working process, in the initial state, all the latch circuits 100 are reset under the unified RESET. At this time, the input input of the input terminal of the signal to be tested is low level, and the reset terminal input of all the latch circuits 100 is at a low level. When the signal is at a high level, the signals output by all the output terminals of the latch circuits 100 are 0, that is, out1, out2, out3, out4 and out5 are all 0. At t=20.5ns, the input keeps the low level unchanged, and the RESET changes to the low level. At this time, the signals output by all the latch circuits 100 remain unchanged, that is, out1, out2, out3, out4 and out5 are all 0 . At t=50ns, the input generates a high-level pulse with a pulse width of 200ps. It can be seen from the simulation that the high-level pulse is sufficient to drive the latch circuit 100 to turn over, so that out1 becomes a high level.

其中,input同时驱动第一级延迟锁存电路中的延迟子电路1012,该延迟子电路1012输出端输出的信号in2比input延迟Δt2,因此,in2与input均为高电平的时间段将比input为高电平的时间段短Δt2,但Δt2仍然能够满足驱动第一级延迟锁存电路中的锁存子电路1011翻转所需的最小时间要求,因此第一级延迟锁存电路中的锁存子电路1011发生翻转,使得out2变为高电平。而第二级延迟锁存电路中的延迟子电路1012输出端输出的信号in3比in2延迟一个第二延迟锁存电路101中的延迟子电路1012的延迟时间Δt3,因此,in3与input均为高电平的时间将比input为高电平的时间短Δt2+Δt3。仿真表明该段时间已不足以驱动第三级延迟锁存电路101中的锁存子电路1011翻转,故out4为低电平,因此,out3与input信号同时为高电平的时间段为0,故第四级延迟锁存电路101中的锁存子电路1011也无法发生翻转。Among them, input drives the delay subcircuit 1012 in the first stage delay latch circuit at the same time, and the signal in2 output from the output end of the delay subcircuit 1012 is delayed by Δt2 than that of input. The time period when input is high level is short Δt2, but Δt2 can still meet the minimum time requirement for driving the latch sub-circuit 1011 in the first-stage delay latch circuit to flip over, so the lock in the first-stage delay latch circuit The sub-circuit 1011 is flipped so that out2 becomes a high level. The signal in3 output from the output end of the delay sub-circuit 1012 in the second-stage delay latch circuit is delayed by a delay time Δt3 of the delay sub-circuit 1012 in the second delay latch circuit 101 compared to in2, therefore, in3 and input are both high The time of the level will be Δt2+Δt3 shorter than the time when the input is high. The simulation shows that this period of time is not enough to drive the latch sub-circuit 1011 in the third-stage delay latch circuit 101 to flip, so out4 is at a low level. Therefore, the time period when out3 and the input signal are at a high level at the same time is 0. Therefore, the latch sub-circuit 1011 in the fourth-stage delay latch circuit 101 cannot be reversed.

以上分析表明,从第一级延迟锁存电路开始,各级延迟锁存电路101中的锁存子电路1011的第一置位输入端和第二置位输入端同时为高电平的时间将逐级递减,直到变为0。并且输入input信号脉冲宽度越宽,即input信号保持为高电平的时间越长,将能够驱动越多的锁存器发生翻转,从而使得out2,…,outn中发生翻转的信号数目越多。The above analysis shows that, starting from the first stage of the delay latch circuit, the time when the first set input terminal and the second set input terminal of the latch sub-circuit 1011 in each stage of the delay latch circuit 101 are at a high level at the same time will be Decrease step by step until it becomes 0. And the wider the pulse width of the input input signal, that is, the longer the input signal remains at a high level, the more latches can be driven to flip, so that the number of flipped signals in out2,...,outn is more.

在本发明中,通过改变输入脉冲宽度,采用电路仿真观察各级锁存电路100的输出情况,即可得到输入脉冲宽度同输出信号逻辑电平的对应表格,参见下表1,在实际测量时,即可根据实际测量中检测到的锁存电路100的翻转情况,依照下表1,反推出待测单粒子瞬态脉冲信号的脉冲宽度。In the present invention, by changing the input pulse width and using circuit simulation to observe the output of the latch circuits 100 at all levels, the corresponding table between the input pulse width and the logic level of the output signal can be obtained, see Table 1 below. , the pulse width of the single-event transient pulse signal to be measured can be inversely deduced according to the inversion of the latch circuit 100 detected in the actual measurement and in accordance with Table 1 below.

表1Table 1

下面将对本发明中的锁存电路100的电路结构和延迟锁存电路101中的延迟子电路1012的电路结构进行详细说明:The circuit structure of the latch circuit 100 in the present invention and the circuit structure of the delay sub-circuit 1012 in the delay latch circuit 101 will be described in detail below:

在本发明中,两输入RS锁存器为或非门RS锁存器,如图4所示,两输入RS锁存器包括第一PMOS管11、第二PMOS管12、第三PMOS管13、第四PMOS管14、第一NMOS管21、第二NMOS管22、第三NMOS管23和第四NMOS管24。第一PMOS管11的源极端和第三PMOS管13的源极端分别与电源连接,第一PMOS管11的栅极端和第一NMOS管21的栅极端分别与两输入RS锁存器的复位端连接,第一PMOS管11的漏极端与第二PMOS管12的源极端连接,第二PMOS管12的栅极端和第二NMOS管22的栅极端分别与两输入RS锁存器的输出端连接,第一NMOS管21的漏极端与第二NMOS管22的漏极端之间的第一连接节点与第二PMOS管12的漏极端连接,第一连接节点还与两输入RS锁存器的Q输出端连接,第三PMOS管13的栅极端和第三NMOS管23的栅极端分别与两输入RS锁存器的置位端连接,第三PMOS管13的漏极端与第四PMOS管14的源极端连接,第四PMOS管14的栅极端和第四NMOS管24的栅极端分别与两输入RS锁存器的Q输出端连接,第三CMOS管的漏极端与第四CMOS管的漏极端之间的第二连接节点与第四PMOS管14的漏极端连接,第二连接节点还与两输入RS锁存器的输出端连接,第一NMOS管21的源极端、第二NMOS管22的源极端、第三NMOS管23的源极端和第四NMOS管24的源极端分别接地。In the present invention, the two-input RS latch is a NOR gate RS latch. As shown in FIG. 4 , the two-input RS latch includes a first PMOS transistor 11 , a second PMOS transistor 12 , and a third PMOS transistor 13 , a fourth PMOS transistor 14 , a first NMOS transistor 21 , a second NMOS transistor 22 , a third NMOS transistor 23 and a fourth NMOS transistor 24 . The source terminal of the first PMOS transistor 11 and the source terminal of the third PMOS transistor 13 are respectively connected to the power supply, and the gate terminal of the first PMOS transistor 11 and the gate terminal of the first NMOS transistor 21 are respectively connected to the reset terminal of the two-input RS latch. The drain terminal of the first PMOS transistor 11 is connected to the source terminal of the second PMOS transistor 12, and the gate terminal of the second PMOS transistor 12 and the gate terminal of the second NMOS transistor 22 are respectively connected to the two-input RS latch. The output terminal is connected, the first connection node between the drain terminal of the first NMOS transistor 21 and the drain terminal of the second NMOS transistor 22 is connected to the drain terminal of the second PMOS transistor 12, and the first connection node is also latched with the two input RS The Q output terminal of the third PMOS transistor 13 and the gate terminal of the third NMOS transistor 23 are respectively connected to the set terminal of the two-input RS latch, and the drain terminal of the third PMOS transistor 13 is connected to the fourth PMOS transistor The source terminal of the transistor 14 is connected, the gate terminal of the fourth PMOS transistor 14 and the gate terminal of the fourth NMOS transistor 24 are respectively connected to the Q output terminal of the two-input RS latch, and the drain terminal of the third CMOS transistor is connected to the fourth CMOS transistor. The second connection node between the drain terminals is connected to the drain terminal of the fourth PMOS transistor 14, and the second connection node is also connected to the two-input RS latch. The output terminals are connected, and the source terminal of the first NMOS transistor 21 , the source terminal of the second NMOS transistor 22 , the source terminal of the third NMOS transistor 23 and the source terminal of the fourth NMOS transistor 24 are grounded respectively.

其中,在上述两输入RS锁存器中所有PMOS管的宽度均为1.92微米,长度为0.13微米,所有NMOS管的宽度均为0.64微米,长度为0.13微米。Wherein, in the above-mentioned two-input RS latches, all PMOS transistors have a width of 1.92 micrometers and a length of 0.13 micrometers, and all NMOS transistors have a width of 0.64 micrometers and a length of 0.13 micrometers.

当然,两输入RS锁存器还可以采用除图4以外的具有信号翻转功能的其他两输入RS锁存器电路结构,本申请不做限定。Of course, the two-input RS latch may also adopt other two-input RS latch circuit structures having a signal inversion function other than FIG. 4 , which is not limited in this application.

在本发明中,三输入RS锁存器可以具有如图5所示的电路结构,三输入RS锁存器包括第五PMOS管15、第六PMOS管16、第七PMOS管17、第八PMOS管18、第九PMOS管19、第五NMOS管25、第六NMOS管26、第七NMOS管27、第八NMOS管28和第九NMOS管29,第五PMOS管15的源极端、第六PMOS管16的源极端和第七PMOS管17的源极端分别与电源连接,第五PMOS管15的栅极端和第五NMOS管25的栅极端分别与三输入RS锁存器的复位端连接,第五PMOS管15的漏极端与第八PMOS管18的源极端连接,第六PMOS管16的栅极端和第七NMOS管27的栅极端分别与三输入RS锁存器的第一置位端连接,第七PMOS管17的栅极端和第九NMOS管29的栅极端分别与三输入RS锁存器的第二置位端连接,第七PMOS管17的漏极端与第九PMOS管19的源极端之间的第三连接节点与第六PMOS管16的漏极端连接,第八PMOS管18的栅极端和第六NMOS管26的栅极端分别与三输入RS锁存器的输出端连接,第八PMOS管18的漏极端、第五NMOS管25的漏极端和第六NMOS管26的漏极端之间的第四连接节点与三输入RS锁存器的Q输出端连接,第九PMOS管19的漏极端、第七NMOS管27的漏极端和第八NMOS管28的漏极端之间的第五连接节点与三输入RS锁存器的输出端连接,第九PMOS管19的栅极端和第八NMOS关的栅极端分别与三输入RS锁存器的Q输出端连接,第七NMOS管27的源极端与第九NMOS管29的漏极端连接,第五NMOS管25的源极端、第六NMOS管26的源极端、第八NMOS管28的源极端和第九NMOS管29的源极端分别接地。In the present invention, the three-input RS latch may have a circuit structure as shown in FIG. 5, and the three-input RS latch includes a fifth PMOS transistor 15, a sixth PMOS transistor 16, a seventh PMOS transistor 17, and an eighth PMOS transistor tube 18, ninth PMOS tube 19, fifth NMOS tube 25, sixth NMOS tube 26, seventh NMOS tube 27, eighth NMOS tube 28 and ninth NMOS tube 29, the source terminal of the fifth PMOS tube 15, the sixth The source terminal of the PMOS transistor 16 and the source terminal of the seventh PMOS transistor 17 are respectively connected to the power supply, the gate terminal of the fifth PMOS transistor 15 and the gate terminal of the fifth NMOS transistor 25 are respectively connected to the reset terminal of the three-input RS latch, The drain terminal of the fifth PMOS transistor 15 is connected to the source terminal of the eighth PMOS transistor 18, and the gate terminal of the sixth PMOS transistor 16 and the gate terminal of the seventh NMOS transistor 27 are respectively connected with the first set terminal of the three-input RS latch. connection, the gate terminal of the seventh PMOS transistor 17 and the gate terminal of the ninth NMOS transistor 29 are respectively connected to the second set terminal of the three-input RS latch, and the drain terminal of the seventh PMOS transistor 17 is connected to the ninth PMOS transistor 19. The third connection node between the source terminals is connected to the drain terminal of the sixth PMOS transistor 16, and the gate terminal of the eighth PMOS transistor 18 and the gate terminal of the sixth NMOS transistor 26 are respectively connected to the three-input RS latch. The output terminal is connected, and the fourth connection node between the drain terminal of the eighth PMOS transistor 18, the drain terminal of the fifth NMOS transistor 25 and the drain terminal of the sixth NMOS transistor 26 is connected to the Q output terminal of the three-input RS latch, The fifth connection node between the drain terminal of the ninth PMOS transistor 19 , the drain terminal of the seventh NMOS transistor 27 , and the drain terminal of the eighth NMOS transistor 28 and the three-input RS latch The output terminal is connected, the gate terminal of the ninth PMOS transistor 19 and the gate terminal of the eighth NMOS switch are respectively connected to the Q output terminal of the three-input RS latch, and the source terminal of the seventh NMOS transistor 27 is connected to the drain terminal of the ninth NMOS transistor 29. The terminals are connected, the source terminal of the fifth NMOS transistor 25 , the source terminal of the sixth NMOS transistor 26 , the source terminal of the eighth NMOS transistor 28 and the source terminal of the ninth NMOS transistor 29 are grounded respectively.

其中,在上述三输入RS锁存器中所有PMOS管的宽度均为1.92微米,长度为0.13微米,所有NMOS管的宽度均为0.64微米,长度为0.13微米。Wherein, in the above-mentioned three-input RS latch, all PMOS transistors have a width of 1.92 micrometers and a length of 0.13 micrometers, and all NMOS transistors have a width of 0.64 micrometers and a length of 0.13 micrometers.

当然,三输入RS锁存器还可以采用除图5以外的具有信号翻转功能的其他三输入RS锁存器电路结构,本申请不做限定。Of course, the three-input RS latch may also adopt other three-input RS latch circuit structures having a signal inversion function other than FIG. 5 , which is not limited in this application.

在本发明中,延迟子电路1012可以具有如图6所示的电路结构,延迟子电路1012包括第十PMOS管31、第十一PMOS管32、第十NMOS管41和第十一NMOS管41,第十PMOS管31的源极端和第十一PMOS管32的源极端与电源连接,第十NMOS管41的源极端和第十一NMOS管42的源极端分别接地,第十PMOS管31的栅极端和第十一NMOS管41的栅极端之间的连接节点为延迟子电路1012的输入端,第十一PMOS管32的漏极端和第十一NMOS管42漏极端之间的连接节点为延迟子电路1012的输出端,第十PMOS管31的漏极端和第十NMOS管41的漏极端之间的连接节点与第十一PMOS管32的栅极端和第十一NMOS管42的栅极端之间的连接节点连接。In the present invention, the delay subcircuit 1012 may have a circuit structure as shown in FIG. 6 , and the delay subcircuit 1012 includes a tenth PMOS transistor 31 , an eleventh PMOS transistor 32 , a tenth NMOS transistor 41 and an eleventh NMOS transistor 41 , the source terminal of the tenth PMOS transistor 31 and the source terminal of the eleventh PMOS transistor 32 are connected to the power supply, and the source terminal of the tenth NMOS transistor 41 and the source terminal of the eleventh NMOS transistor 42 are grounded respectively. The connection node between the gate terminal and the gate terminal of the eleventh NMOS transistor 41 is the input terminal of the delay sub-circuit 1012, and the connection node between the drain terminal of the eleventh PMOS transistor 32 and the drain terminal of the eleventh NMOS transistor 42 is The output terminal of the delay sub-circuit 1012 is the connection node between the drain terminal of the tenth PMOS transistor 31 and the drain terminal of the tenth NMOS transistor 41 and the gate terminal of the eleventh PMOS transistor 32 and the gate terminal of the eleventh NMOS transistor 42 connection between nodes.

当然,延迟子电路1012还可以采用除图6以外的具有信号翻转功能的延迟子电路1012的电路结构,本申请不做限定。Of course, the delay sub-circuit 1012 may also adopt the circuit structure of the delay sub-circuit 1012 with a signal inversion function other than that shown in FIG. 6 , which is not limited in this application.

基于同一发明构思,本发明实施例还提供一种集成电路,包括如上所述的单粒子瞬态脉冲宽度测量电路,对于单粒子瞬态脉冲宽度测量电路的结构参见上一实施例,此处不再赘述。Based on the same inventive concept, an embodiment of the present invention also provides an integrated circuit, including the single-event transient pulse width measurement circuit as described above. For the structure of the single-event transient pulse width measurement circuit, refer to the previous embodiment, which is not described here. Repeat.

基于同一发明构思,本发明实施例还提供一种电子设备,包含如上所述的集成电路。Based on the same inventive concept, an embodiment of the present invention further provides an electronic device including the above-mentioned integrated circuit.

上述本申请实施例中的技术方案,至少具有如下的技术效果或优点:The technical solutions in the above embodiments of the present application have at least the following technical effects or advantages:

在本发明中,在待测信号输入端接入待测单粒子瞬态脉冲信号后,待测单粒子瞬态脉冲信号驱动至少一级延迟锁存电路顺次发生翻转,将锁存电路的输出端和至少一级延迟锁存电路中各个延迟锁存电路的输出端作为单粒子瞬态脉冲宽度测量电路的信号输出端,根据各个信号输出端的电平的高低,能够反推出待测单粒子瞬态脉冲信号的脉冲宽度,通过增加延迟锁存电路的级数即可扩大测量信号的范围,测量范围广,并且,通过改变延迟锁存电路的延迟时间,即可调节对应各级的测试精度,满足不同级延迟锁存电路的不同测试要求,另外,本发明不需要外部输入时钟信号,所以没有对外部输入时钟信号的要求。In the present invention, after the single-event transient pulse signal to be tested is connected to the input end of the signal to be tested, the single-event transient pulse signal to be tested drives the at least one stage of the delay latch circuit to be reversed in sequence, and the output of the latch circuit is reversed. The terminal and the output terminals of each delay latch circuit in the at least one-stage delay latch circuit are used as the signal output terminal of the single-event transient pulse width measurement circuit. The pulse width of the state pulse signal can be expanded by increasing the number of stages of the delay latch circuit. It can meet the different test requirements of different stages of delay latch circuits. In addition, the present invention does not need an external input clock signal, so there is no requirement for an external input clock signal.

尽管已描述了本发明的优选实施例,但本领域内的技术人员一旦得知了基本创造性概念,则可对这些实施例作出另外的变更和修改。所以,所附权利要求意欲解释为包括优选实施例以及落入本发明范围的所有变更和修改。Although preferred embodiments of the present invention have been described, additional changes and modifications to these embodiments may occur to those skilled in the art once the basic inventive concepts are known. Therefore, the appended claims are intended to be construed to include the preferred embodiment and all changes and modifications that fall within the scope of the present invention.

显然,本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样,倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内,则本发明也意图包含这些改动和变型在内。It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention. Thus, provided that these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.

Claims (6)

1.一种单粒子瞬态脉冲宽度测量电路,其特征在于,包括待测信号输入端、锁存电路和多级延迟锁存电路,每级延迟锁存电路包括延迟子电路和锁存子电路;1. a single-particle transient pulse width measurement circuit, is characterized in that, comprises the signal input terminal to be measured, latch circuit and multistage delay latch circuit, and each stage delay latch circuit comprises delay subcircuit and latch subcircuit ; 所述锁存电路的输入端与所述待测信号输入端连接,所述锁存电路为两输入RS锁存器,所述两输入RS锁存器的置位输入端与所述待测信号输入端连接;The input end of the latch circuit is connected to the input end of the signal to be measured, the latch circuit is a two-input RS latch, and the set input end of the two-input RS latch is connected to the signal to be measured. input connection; 所述多级延迟锁存电路中的第一级延迟锁存电路的延迟子电路的输入端与所述待测信号输入端连接,所述第一级延迟锁存电路的延迟子电路的输出端与所述第一级延迟锁存电路的锁存子电路的第一置位输入端连接,所述第一级延迟锁存电路的锁存子电路的第二置位输入端与所述待测信号输入端连接;The input end of the delay sub-circuit of the first-stage delay latch circuit in the multi-stage delay latch circuit is connected to the input end of the signal to be tested, and the output end of the delay sub-circuit of the first-stage delay latch circuit is connected to the first set input end of the latch sub-circuit of the first-stage delay latch circuit, and the second set input end of the latch sub-circuit of the first-stage delay latch circuit is connected to the Signal input terminal connection; 在所述多级延迟锁存电路中,从第二级延迟锁存电路开始,每级延迟锁存电路中的延迟子电路的输入端与前一级延迟锁存电路中的延迟子电路的输出端连接,每级延迟锁存电路中的延迟子电路的输出端与该级延迟锁存电路中的锁存子电路的第一置位输入端连接,每级延迟锁存电路中的锁存子电路的第二置位输入端与所述待测信号输入端连接;In the multi-stage delay latch circuit, starting from the second stage of the delay latch circuit, the input end of the delay subcircuit in each stage of the delay latch circuit is connected to the output of the delay subcircuit in the previous stage of the delay latch circuit The output end of the delay subcircuit in each stage of the delay latch circuit is connected with the first set input end of the latch subcircuit in the delay latch circuit of this stage, and the latch subcircuit in the delay latch circuit of each stage is connected The second set input end of the circuit is connected to the input end of the signal to be measured; 其中,在所述待测信号输入端接入待测单粒子瞬态脉冲信号后,所述待测单粒子瞬态脉冲信号驱动所述多级延迟锁存电路顺次发生翻转,将所述锁存电路的Q输出端和所述多级延迟锁存电路中各个延迟锁存电路的锁存子电路的Q输出端作为所述单粒子瞬态脉冲宽度测量电路的信号输出端。Wherein, after the single-event transient pulse signal to be tested is connected to the input terminal of the signal to be tested, the single-event transient pulse signal to be tested drives the multi-stage delay latch circuit to turn over in sequence, and the lock The Q output terminal of the storage circuit and the Q output terminal of the latch sub-circuits of each delay latch circuit in the multi-stage delay latch circuit are used as the signal output terminal of the single-event transient pulse width measurement circuit. 2.如权利要求1所述的单粒子瞬态脉冲宽度测量电路,其特征在于,所述延迟子电路由偶数级反向器级联构成。2 . The single-event transient pulse width measurement circuit according to claim 1 , wherein the delay subcircuit is composed of even-numbered inverters in cascade. 3 . 3.如权利要求1所述的单粒子瞬态脉冲宽度测量电路,其特征在于,所述锁存子电路为三输入RS锁存器。3 . The single-event transient pulse width measurement circuit according to claim 1 , wherein the latch sub-circuit is a three-input RS latch. 4 . 4.如权利要求1所述的单粒子瞬态脉冲宽度测量电路,其特征在于,所述锁存电路的复位端和所有延迟锁存电路的复位端接入同一复位信号。4 . The single-event transient pulse width measurement circuit according to claim 1 , wherein the reset terminal of the latch circuit and the reset terminals of all delay latch circuits are connected to the same reset signal. 5 . 5.一种集成电路,其特征在于,包括如权利要求1-4中任一权利要求所述的单粒子瞬态脉冲宽度测量电路。5. An integrated circuit, characterized by comprising the single-event transient pulse width measurement circuit according to any one of claims 1-4. 6.一种电子设备,其特征在于,包括如权利要求5所述的集成电路。6. An electronic device, comprising the integrated circuit of claim 5.
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CN108233904B (en) * 2018-01-09 2021-11-16 中国科学院微电子研究所 Anti-transient effect gate
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102818939A (en) * 2011-06-08 2012-12-12 中国科学院微电子研究所 Single-particle transient pulse width measuring circuit
CN103063933A (en) * 2011-10-20 2013-04-24 中国科学院微电子研究所 Single-particle pulse width measuring circuit
CN103983834A (en) * 2014-05-16 2014-08-13 中国科学院微电子研究所 Single-particle transient pulse signal amplitude measuring circuit
CN104678188A (en) * 2014-12-22 2015-06-03 中国科学院微电子研究所 Single-particle transient pulse width measuring circuit
CN104808073A (en) * 2015-04-20 2015-07-29 中国科学院微电子研究所 Single-particle transient pulse width measuring circuit
CN102981063B (en) * 2012-11-13 2015-09-16 工业和信息化部电子第五研究所 Single event transient pulse method for measuring width and measurement mechanism, pulse generating device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102818939A (en) * 2011-06-08 2012-12-12 中国科学院微电子研究所 Single-particle transient pulse width measuring circuit
CN103063933A (en) * 2011-10-20 2013-04-24 中国科学院微电子研究所 Single-particle pulse width measuring circuit
CN102981063B (en) * 2012-11-13 2015-09-16 工业和信息化部电子第五研究所 Single event transient pulse method for measuring width and measurement mechanism, pulse generating device
CN103983834A (en) * 2014-05-16 2014-08-13 中国科学院微电子研究所 Single-particle transient pulse signal amplitude measuring circuit
CN104678188A (en) * 2014-12-22 2015-06-03 中国科学院微电子研究所 Single-particle transient pulse width measuring circuit
CN104808073A (en) * 2015-04-20 2015-07-29 中国科学院微电子研究所 Single-particle transient pulse width measuring circuit

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