CN106558829A - Based on the double Raman media in common chamber and the 589nm laser instrument of laser and frequency - Google Patents
Based on the double Raman media in common chamber and the 589nm laser instrument of laser and frequency Download PDFInfo
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- 238000001069 Raman spectroscopy Methods 0.000 title claims abstract description 49
- 239000013078 crystal Substances 0.000 claims abstract description 51
- 239000011521 glass Substances 0.000 claims abstract description 5
- 239000011248 coating agent Substances 0.000 claims description 16
- 238000000576 coating method Methods 0.000 claims description 16
- 230000005540 biological transmission Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 230000009977 dual effect Effects 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 abstract description 8
- 229910052708 sodium Inorganic materials 0.000 abstract description 8
- 239000011734 sodium Substances 0.000 abstract description 8
- IWOUKMZUPDVPGQ-UHFFFAOYSA-N barium nitrate Chemical compound [Ba+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O IWOUKMZUPDVPGQ-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 4
- COQOFRFYIDPFFH-UHFFFAOYSA-N [K].[Gd] Chemical compound [K].[Gd] COQOFRFYIDPFFH-UHFFFAOYSA-N 0.000 abstract description 2
- 230000010354 integration Effects 0.000 abstract description 2
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 abstract description 2
- 230000007123 defense Effects 0.000 abstract 1
- 239000000835 fiber Substances 0.000 description 5
- 230000003044 adaptive effect Effects 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 125000004436 sodium atom Chemical group 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000005433 ionosphere Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/30—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range using scattering effects, e.g. stimulated Brillouin or Raman effects
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- H—ELECTRICITY
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/1086—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering using scattering effects, e.g. Raman or Brillouin effect
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Abstract
一种基于共腔双拉曼介质以及激光和频的589nm激光器，包括1064nm激光源，沿该1064nm激光源的激光输出方向依次是二分之一玻片、法拉第隔离器、拉曼激光器的前腔镜、钨酸钆钾晶体(化学式：KGa(WO4)2，以下简称为KGW晶体)、硝酸钡晶体(化学式：Ba(NO3)2，以下简称为：BN晶体)、拉曼激光器的后腔镜、第一滤波镜片、反射镜、非线性晶体和第二滤波镜片，1064nm泵浦激光耦合进入到拉曼激光器谐振腔中，经KGW晶体拉曼频移后产生1159nm激光，剩余的1064nm泵浦光经BN晶体拉曼频移后产生1197.8nm激光，1159nm激光和1197.8nm激光在非线性晶体中通过和频产生589nm激光。本发明具有结构简单，便于集成化的特点，可以用作产生人工钠导星的激光源，在天文和国防等领域具有重要的意义。
A 589nm laser based on a common-cavity double Raman medium and a laser sum frequency, including a 1064nm laser source, along the laser output direction of the 1064nm laser source is a half glass slide, a Faraday isolator, and the front cavity of the Raman laser mirror, potassium gadolinium tungstate crystal (chemical formula: KGa(WO 4 ) 2 , hereinafter abbreviated as KGW crystal), barium nitrate crystal (chemical formula: Ba(NO 3 ) 2 , hereinafter abbreviated as: BN crystal), Raman laser rear Cavity mirror, first filter mirror, reflector, nonlinear crystal and second filter mirror, 1064nm pump laser is coupled into the Raman laser resonator, 1159nm laser is generated after Raman frequency shift by KGW crystal, the remaining 1064nm pump The Pu light is Raman frequency shifted by BN crystal to generate 1197.8nm laser, and 1159nm laser and 1197.8nm laser pass the sum frequency in nonlinear crystal to generate 589nm laser. The invention has the characteristics of simple structure and easy integration, can be used as a laser source for producing artificial sodium guide stars, and has important significance in the fields of astronomy and national defense.
Description
技术领域technical field
本发明属于固体激光技术领域，具体是一种基于共腔双拉曼介质以及激光和频的589nm激光器。The invention belongs to the technical field of solid lasers, in particular to a 589nm laser based on a common cavity double Raman medium and a laser sum frequency.
背景技术Background technique
钠信标激光器用来激发海拔80～100km高度处的大气电离层中的钠原子，引起钠原子共振产生后向散射荧光，从而产生高亮度的钠导引星。通过这种方式，在那些看不见自然星的天空位置，可以用人造的星星代替自然形体。激光导引星可以作为自适应光学的参考指标，由此来获得信标光通过大气产生的波前畸变信息，再利用自适应光学技术校正大气扰动，可以极大地提高光学望远镜的分辨率，达到近衍射极限，这对天文观测与空间目标探测具有重要意义。The sodium beacon laser is used to excite sodium atoms in the atmospheric ionosphere at an altitude of 80-100km, causing the sodium atoms to resonate and produce backscattered fluorescence, thereby producing a high-brightness sodium guide star. In this way, artificial stars can be substituted for natural forms in those positions of the sky where no natural stars are visible. The laser guide star can be used as a reference index for adaptive optics, so as to obtain the wavefront distortion information generated by the beacon light passing through the atmosphere, and then use adaptive optics technology to correct atmospheric disturbances, which can greatly improve the resolution of optical telescopes, reaching Near the diffraction limit, which is of great significance for astronomical observation and space target detection.
目前已经发展的获得589nm钠信标激光源的主要类型有染料激光器、固体激光器和频以及光纤拉曼放大倍频。染料激光器是最早提出和发展的获得钠黄光的方式，但是染料激光器系统复杂庞大，造成运输困难，同时也存在着稳定性差和不安全的问题。所以，染料激光器逐渐的被结构紧凑，光谱覆盖范围广的新型固体激光器代替。拉曼光纤激光器也是一种快速发展的获得589nm激光的有效方法，通过光纤激光器的拉曼频移技术获得1178nm基频光输出，然后通过倍频技术获得钠黄光。但是光纤激光器的口径较小，其输出功率以及能量受到限制，在高峰值功率输出下，容易产生受激布里渊散射散射和自聚焦等非线性效应，光纤激光器的应用受到了很大的限制。目前比较常见的一种获得高功率高能量的589nm激光源是基于全固体激光增益介质，将所获得的1064nm和1319nm激光和频获得，目前已经成功获得33W的钠黄光输出(Chinese Physics B,2014,23(9):094208)，并开展了外场实验。The main types of laser sources that have been developed to obtain 589nm sodium beacons include dye lasers, solid-state lasers, and fiber Raman amplification frequency doubling. Dye laser is the first method proposed and developed to obtain sodium yellow light. However, the dye laser system is complex and bulky, which makes transportation difficult, and also has problems of poor stability and unsafety. Therefore, dye lasers are gradually replaced by new solid-state lasers with compact structure and wide spectral coverage. Raman fiber laser is also a fast-growing and effective method to obtain 589nm laser. The 1178nm fundamental frequency light output is obtained through Raman frequency shift technology of fiber laser, and then sodium yellow light is obtained through frequency doubling technology. However, the fiber laser has a small aperture, and its output power and energy are limited. Under high peak power output, nonlinear effects such as stimulated Brillouin scattering and self-focusing are prone to occur, and the application of fiber lasers is greatly restricted. . At present, a relatively common high-power and high-energy 589nm laser source is based on an all-solid-state laser gain medium, and the obtained 1064nm and 1319nm lasers are combined to obtain a 33W sodium yellow light output (Chinese Physics B, 2014,23(9):094208), and carried out field experiments.
除了以上所述的三种技术方案，还有一种有效获得589nm激光的是通过拉曼频移技术，可以通过拉曼晶体将1064nm激光频移到1178nm,然后通过激光倍频晶体获得589nm；或直接将黄绿光拉曼频移到589nm激光。文献中已经报道将1064nm激光通过CaWO4晶体的拉曼频移后获得1178nm激光(Optics Letters,2015,40(4):530-533)，然后再通过倍频获得589nm激光，但是CaWO4晶体的体积相对较小，不容易获得高功率和高能量的589nm激光输出，从而限制了589nm激光的应用。In addition to the above three technical solutions, there is another way to effectively obtain 589nm laser through Raman frequency shift technology, which can shift the frequency of 1064nm laser to 1178nm through Raman crystal, and then obtain 589nm through laser frequency doubling crystal; or directly Shift the Raman frequency of yellow-green light to 589nm laser. It has been reported in the literature that the 1178nm laser is obtained after the 1064nm laser is shifted by the Raman frequency of the CaWO 4 crystal (Optics Letters, 2015,40(4):530-533), and then the 589nm laser is obtained by frequency doubling, but the CaWO 4 crystal The volume is relatively small, and it is not easy to obtain high-power and high-energy 589nm laser output, thus limiting the application of 589nm laser.
发明内容Contents of the invention
本发明为了解决现有技术输出钠黄光技术存在的结构复杂，成本较高的问题，提出了一种基于共腔双拉曼介质以及激光和频的589nm激光器。The present invention proposes a 589nm laser based on a common-cavity double Raman medium and a laser sum frequency in order to solve the problems of complex structure and high cost in the prior art technology for outputting sodium yellow light.
本发明通过如下技术方案实现：The present invention realizes through following technical scheme:
一种基于共腔双拉曼介质以及激光和频的589nm激光器，其特点在于，包括1064nm激光源，沿该1064nm激光源的激光输出方向依次是二分之一玻片、法拉第隔离器、拉曼激光器的前腔镜、钨酸钆钾晶体(化学式：KGa(WO4)2，以下简称为KGW晶体)、硝酸钡晶体(化学式：Ba(NO3)2，以下简称为：BN晶体)、拉曼激光器的后腔镜、第一滤波镜片、反射镜、非线性晶体和第二滤波镜片，所述的拉曼激光器的前腔镜上镀有1064nm增透膜、1159nm高反膜和1197.8nm高反膜，所述的KGW晶体两端镀有1064nm增透膜、1159nm增透膜和1197.8nm增透膜，所述的BN晶体两端镀有1064nm增透膜和1197.8nm增透膜，所述的拉曼激光器的后腔镜上镀有1064nm增透膜、1159nm半透半反膜和1197.8nm半透半反膜，所述的第一滤波镜片镀有1064nm高透、1159nm高反膜和1197.8nm高反膜，所述的反射镜上镀有1159nm高反膜和1197.8nm高反膜，所述的第二滤波片上镀有为589nm高反膜、1159nm高透膜和1197.8nm高透膜。A 589nm laser based on a common-cavity double Raman medium and a laser sum frequency, which is characterized in that it includes a 1064nm laser source, and the laser output direction along the 1064nm laser source is one-half of a glass slide, a Faraday isolator, and a Raman laser. Laser front cavity mirror, potassium gadolinium tungstate crystal (chemical formula: KGa(WO 4 ) 2 , hereinafter referred to as KGW crystal), barium nitrate crystal (chemical formula: Ba(NO 3 ) 2 , hereinafter referred to as: BN crystal), pull The rear cavity mirror, the first filter lens, the reflector, the nonlinear crystal and the second filter lens of the Raman laser, the front cavity mirror of the Raman laser is coated with a 1064nm antireflection film, a 1159nm high reflection film and a 1197.8nm high Anti-reflection film, the two ends of the KGW crystal are coated with 1064nm anti-reflection coating, 1159nm anti-reflection coating and 1197.8nm anti-reflection coating, and the two ends of the BN crystal are coated with 1064nm anti-reflection coating and 1197.8nm anti-reflection coating. The rear cavity mirror of the Raman laser is coated with 1064nm anti-reflection film, 1159nm semi-transparent and semi-reflective film and 1197.8nm semi-transparent and semi-reflective film, and the first filter lens is coated with 1064nm high-transparency, 1159nm high-reflection film and 1197.8 nm high reflection film, the mirror is coated with a 1159nm high reflection film and a 1197.8nm high reflection film, and the second filter plate is coated with a 589nm high reflection film, a 1159nm high transmission film and a 1197.8nm high transmission film.
所述的1064nm激光源为连续激光器、准连续激光器或脉冲激光器。The 1064nm laser source is a continuous laser, a quasi continuous laser or a pulsed laser.
所述的KGW晶体的长度为50～80mm。The length of the KGW crystal is 50-80 mm.
所述的BN晶体的长度为50～80mm。The length of the BN crystal is 50-80 mm.
所述的非线性晶体为KTP、BBO、LBO或KDP晶体。The nonlinear crystal is KTP, BBO, LBO or KDP crystal.
所述的1159nm激光与1197.8nm激光在所述的非线性晶体中的和频过程为Ⅰ类相位匹配。The sum-frequency process of the 1159nm laser and the 1197.8nm laser in the nonlinear crystal is type I phase matching.
所述的1064nm激光源的输出光经所述的二分之一玻片和法拉第隔离器后进入所述的拉曼激光器谐振腔，依次通过拉曼激光器腔镜、KGW晶体和BN晶体。1064nm激光经所述的KGW晶体拉曼频移后得到波长为1159nm激光，1064nm激光经所述的BN晶体拉曼频移后得到波长为1197.8nm激光。所述的拉曼激光器输出镜上镀有1064nm增透膜、1159nm半透半反膜和1197.8nm半透半反膜，剩余的1064nm激光、1159nm激光与1197.8nm激光经拉曼激光器输出镜输出后，射入所述的第一滤波镜片。所述的滤波镜片上镀有1064nm高透、1159nm高反膜和1197.8nm高反膜，所述的1064nm激光经第一滤波镜片透射，形成1064nm透射光，所述的1159nm激光与所述的1197.8nm激光经第一滤波镜片反射后，因为在所述的反射镜上镀有1159nm高反膜和1197.8nm高反膜，所以同时经所述的反射镜反射进入到所述的非线性晶体，在该非线性晶体中和频获得589nm激光。所述的滤波片上镀有为589nm高反膜、1159nm高透膜和1197.8nm高透膜，在所述的第二滤波镜片滤除多余的1159nm激光与1197.8nm激光，并反射输出589nm激光。The output light of the 1064nm laser source enters the Raman laser resonant cavity after passing through the half glass slide and the Faraday isolator, and passes through the Raman laser cavity mirror, KGW crystal and BN crystal in sequence. The 1064nm laser is Raman frequency-shifted by the KGW crystal to obtain a laser with a wavelength of 1159nm, and the 1064nm laser is Raman-shifted by the BN crystal to obtain a laser with a wavelength of 1197.8nm. The Raman laser output mirror is coated with 1064nm anti-reflection film, 1159nm semi-transparent and semi-reflective film and 1197.8nm semi-transparent and semi-reflective film, and the remaining 1064nm laser, 1159nm laser and 1197.8nm laser are output through the Raman laser output mirror , entering the first filter lens. The filter lens is coated with 1064nm high-transparency, 1159nm high-reflection film and 1197.8nm high-reflection film, the 1064nm laser is transmitted through the first filter lens to form 1064nm transmitted light, the 1159nm laser and the 1197.8nm After the nm laser is reflected by the first filter mirror, because the mirror is coated with a 1159nm high-reflection film and a 1197.8nm high-reflection film, it is reflected by the mirror and enters the nonlinear crystal at the same time. The neutral frequency of the nonlinear crystal is 589nm laser. The filter is coated with a 589nm high-reflection film, a 1159nm high-transparency film and a 1197.8nm high-transmission film. The second filter plate filters out redundant 1159nm laser and 1197.8nm laser, and reflects and outputs 589nm laser.
与现在的技术相比，本发明具有的优势是：Compared with current technology, the advantages of the present invention are:
1)本发明采用的是混合拉曼介质共腔的结构，同时输出1159nm和1197.8nm激光，因此不需要额外的延时同步控制装置，便于产品的集成化。1) The present invention adopts the structure of mixed Raman medium common cavity, and outputs 1159nm and 1197.8nm lasers at the same time, so no additional delay synchronization control device is needed, which is convenient for product integration.
2)本发明采用的KGW晶体以及BN晶体尺寸较大，KGW晶体的抗损伤阈值高，可以达10GW/cm2能够满足高能量以及高功率589nm激光输出的要求。2) The size of KGW crystal and BN crystal used in the present invention is relatively large, and the damage resistance threshold of KGW crystal is high, which can reach 10GW/ cm2 , which can meet the requirements of high energy and high power 589nm laser output.
3)本发明采用的合适的1064nm激光源，可相应获得连续的、准连续的和脉冲的589nm激光输出。3) The suitable 1064nm laser source used in the present invention can obtain continuous, quasi-continuous and pulsed 589nm laser output accordingly.
4)本发明采用的1064nm激光源容易获得，并且输出功率和输出能量较高，降低了生产成本。4) The 1064nm laser source used in the present invention is easy to obtain, and the output power and output energy are relatively high, which reduces the production cost.
附图说明Description of drawings
图1为本发明基于共腔双拉曼介质以及激光和频的589nm激光器的结构示意图Fig. 1 is the structural representation of the 589nm laser based on the common cavity double Raman medium and the laser sum frequency of the present invention
图2为本发明获得的589nm光谱Fig. 2 is the 589nm spectrum that the present invention obtains
具体实施方式detailed description
下面结合附图对本发明作进一步的详细说明。The present invention will be further described in detail below in conjunction with the accompanying drawings.
请参阅图1，图1为本发明基于共腔双拉曼介质以及激光和频的589nm激光器的结构示意图，如图所示，本发明基于共腔双拉曼介质以及激光和频的589nm激光器，包括1064nm激光泵浦源1，二分之一玻片2，法拉第隔离器3，拉曼激光器腔镜4，拉曼激光器输出镜(7)，KGW晶体5、(BN)晶体6、第一滤波镜片8、反射镜12、KDP晶体13以及第二滤波镜片15。所述的1064nm激光源1发射的激光经过所述的二分之一玻片2和所述的法拉第隔离器3，经过所述的拉曼激光器的前腔镜4进入到拉曼激光器谐振腔内，1064nm激光经过所述的KGW晶体5拉曼频移后可以得到波长为1159nm激光10；1064nm泵浦激光进入到所述的BN晶体6，经拉曼频移后可以获得波长为1197.8nm激光11。拉曼激光器的前腔镜4镀有对1064nm高透膜、1159nm高反膜和1197.8nm高反膜，拉曼激光器的后输腔镜7镀有对1064nm的高透膜、1159nm激光10透过率为70％的介质膜以及1197.8nm 11透过率为70％的介质膜，因此1159nm激光10与1197.8nm激光11在腔内完成多次往返。剩余的1064nm激光、1159nm激光10与1197.8nm激光11经拉曼激光器输出镜7输出后，射入所述的第一滤波镜片8，所述的1064nm激光经第一滤波镜片8透射，形成1064nm透射光9，所述的1159nm激光10与所述的1197.8nm激光11经第一滤波镜片8和所述的反射镜12反射后，进入到KDP晶体13。所述的KDP晶体13的切割角θ为42.5°，满足Ⅰ类相位匹配条件，在该KDP晶体13中和频获得589nm激光14后经所述的第二滤波镜片15滤除多余的1159nm激光与1197.8nm激光，并反射输出589nm激光14，所得的光谱如图2中所示。Please refer to Fig. 1. Fig. 1 is a schematic structural diagram of a 589nm laser based on a common cavity dual Raman medium and a laser sum frequency in the present invention. As shown in the figure, the present invention is based on a common cavity dual Raman medium and a 589nm laser with a laser sum frequency. Including 1064nm laser pump source 1, half slide 2, Faraday isolator 3, Raman laser cavity mirror 4, Raman laser output mirror (7), KGW crystal 5, (BN) crystal 6, first filter mirror 8 , mirror 12 , KDP crystal 13 and second filter mirror 15 . The laser light emitted by the 1064nm laser source 1 passes through the half glass slide 2 and the Faraday isolator 3, and enters the Raman laser cavity through the front cavity mirror 4 of the Raman laser After the 1064nm laser is Raman frequency-shifted by the KGW crystal 5, a laser 10 with a wavelength of 1159nm can be obtained; the 1064nm pump laser enters the BN crystal 6, and a laser 1197.8nm with a wavelength of 11 can be obtained after Raman frequency shift. . The front cavity mirror 4 of the Raman laser is coated with a 1064nm high-transparency film, a 1159nm high-reflection film and a 1197.8nm high-reflection film, and the rear cavity mirror 7 of the Raman laser is coated with a 1064nm high-transmission film and a 1159nm laser 10 through The dielectric film with a transmittance of 70% and the dielectric film with a transmittance of 1197.8nm 11 are 70%, so the 1159nm laser 10 and the 1197.8nm laser 11 complete multiple round trips in the cavity. After the remaining 1064nm laser, 1159nm laser 10 and 1197.8nm laser 11 are output by the Raman laser output mirror 7, they are injected into the first filter lens 8, and the 1064nm laser is transmitted through the first filter lens 8 to form a 1064nm transmission The light 9, the 1159nm laser 10 and the 1197.8nm laser 11 enter the KDP crystal 13 after being reflected by the first filter lens 8 and the reflector 12 . The cutting angle θ of the KDP crystal 13 is 42.5°, which meets the phase-matching condition of type I. After the 589nm laser 14 is obtained at the neutral frequency of the KDP crystal 13, the redundant 1159nm laser and the 1197.8nm laser, and reflect and output 589nm laser 14, the obtained spectrum is shown in Figure 2.
最后所应说明的是，以上实施例仅用以说明本发明的技术方案而非限制，尽管参照较佳实施例对本发明进行了详细说明，本领域的普通技术人员应当理解，可以对发明的技术方案进行修改或者等同替换，而不脱离本发明技术方案的精神和范围，其均应涵盖在本发明的权利要求范围当中。Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention without limitation. Although the present invention has been described in detail with reference to the preferred embodiments, those of ordinary skill in the art should understand that the technology of the invention can be Modifications or equivalent replacements of the technical solutions without departing from the spirit and scope of the technical solutions of the present invention shall be covered by the scope of the claims of the present invention.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110556702A (en) * | 2018-06-03 | 2019-12-10 | 中国科学院大连化学物理研究所 | Solid blue laser |
| CN114875473A (en) * | 2022-05-30 | 2022-08-09 | 福建福晶科技股份有限公司 | Crystal preparation method for improving KGW crystal quality and utilization rate |
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| CN104821482A (en) * | 2015-05-19 | 2015-08-05 | 山东大学 | Quasi-continuous 589nm laser based on crystal Raman technology and application thereof |
| CN105633786A (en) * | 2016-03-29 | 2016-06-01 | 中国科学院福建物质结构研究所 | Multi-wavelength all-solid-state yellow-light laser |
| JP2016134584A (en) * | 2015-01-22 | 2016-07-25 | 株式会社島津製作所 | Laser module and laser device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016134584A (en) * | 2015-01-22 | 2016-07-25 | 株式会社島津製作所 | Laser module and laser device |
| CN104821482A (en) * | 2015-05-19 | 2015-08-05 | 山东大学 | Quasi-continuous 589nm laser based on crystal Raman technology and application thereof |
| CN105633786A (en) * | 2016-03-29 | 2016-06-01 | 中国科学院福建物质结构研究所 | Multi-wavelength all-solid-state yellow-light laser |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110556702A (en) * | 2018-06-03 | 2019-12-10 | 中国科学院大连化学物理研究所 | Solid blue laser |
| CN114875473A (en) * | 2022-05-30 | 2022-08-09 | 福建福晶科技股份有限公司 | Crystal preparation method for improving KGW crystal quality and utilization rate |
| CN114875473B (en) * | 2022-05-30 | 2023-11-14 | 福建福晶科技股份有限公司 | Crystal preparation method for improving KGW crystal quality and utilization rate |
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