CN106542495A - A kind of preparation method of micro-electrical-mechanical system vibration jet actuator - Google Patents
A kind of preparation method of micro-electrical-mechanical system vibration jet actuator Download PDFInfo
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- CN106542495A CN106542495A CN201611136058.4A CN201611136058A CN106542495A CN 106542495 A CN106542495 A CN 106542495A CN 201611136058 A CN201611136058 A CN 201611136058A CN 106542495 A CN106542495 A CN 106542495A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
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Abstract
The invention discloses a kind of preparation method of micro-electrical-mechanical system vibration jet actuator, comprises the following steps：S1, N GaN layers and P GaN layers are made on substrate；S2, in P GaN layers plated film formed indium tin oxide layer, the grown silicon nitride film on indium tin oxide layer；S3, bottom electrode figure is obtained on silicon nitride film；S4, the silicon chip after development is removed into primer using oxygen in reactive ion etching；S5, substrate is placed in acetone vessel, obtains electrode pattern；S6, first piece substrate back apply thick photoresist；S7, whole substrate is put in the mixed solution of strong phosphoric acid and concentrated sulphuric acid and is corroded, remove the silicon substrate of the redundance flapped under piece；S8, second silicon chip golden film surface apply optics etching glue, by the back side of first piece silicon chip and second Wafer bonding for scribbling photoresist；S9, respectively the welding electrode lead in the golden film of upper lower silicon slice.
Description
Technical field
The present invention relates to microelectronic device preparation field, more particularly to a kind of micro-electrical-mechanical system vibration jet actuator
Preparation method.
Background technology
Miniature jet executor based on microelectromechanical systems (MEMS) technology is controlled as on small-sized unmanned aircraft
The new way of Complex Flows, with low cost, energy consumption be little, distributed AC servo system, and to flowing without negative effect the features such as.
The present invention gives the preparation method of MEMS vibration jet actuator chip core portions.MEMS miniature jets are performed
Device is for the aerodynamic force control of micro air vehicle, unmanned plane and High Angle of Attack maneuvering flight fighter plane, and reduces torpedo, submarine
Noise during navigation etc. is with important using value.
The MEMS fluidic hardwares of fluid control are applied at present at home there is not yet relevant document and report.
The content of the invention
The invention aims to shortcoming present in prior art is solved, and a kind of micro-electrical-mechanical system for proposing
The preparation method of vibration jet actuator.
To achieve these goals, present invention employs following technical scheme：
A kind of preparation method of micro-electrical-mechanical system vibration jet actuator, comprises the following steps：
S1, substrate is done from common silicon chip, make cushion, N-GaN layers and P-GaN layers, on P-GaN layers on substrate
Downward etching forms step and exposes N-GaN layers；
S2, on P-GaN layers plated film formed indium tin oxide layer, using the method for low-pressure chemical vapor deposition in tin indium oxide
Grown silicon nitride film on layer；
S3, apply optics etching glue on silicon nitride film, bottom electrode figure is obtained after exposure imaging；
S4, the silicon chip after development is removed into primer using oxygen in reactive ion etching；
S5, substrate is placed in acetone vessel, and photoresist and the chrome gold on glue that ultrasound wave is removed on silicon chip are thin
Film, the dry etching for obtaining chrome gold shelter bottom electrode figure；
S6, first piece substrate back apply thick photoresist, it is exposed after obtain back surface corrosion window graphics to be etched；
S7, whole substrate is put in the mixed solution of strong phosphoric acid and concentrated sulphuric acid and is corroded, removal is flapped many under piece
The silicon substrate of remaining part point, and obtain chip architecture of flapping；
S8, second silicon chip golden film surface apply optics etching glue, by the back side of first piece silicon chip with scribble photoresist
Second Wafer bonding；
S9, respectively the welding electrode lead in the golden film of upper lower silicon slice.
Preferably, the substrate selected in step S1 is common two-sided silicon chip, and thickness is 480-520 microns.
Preferably, in step S2, the operation of plated film formation indium tin oxide layer is specially：
In 150-350 DEG C of cavity temperature, oxygen flow 5-15sccm, vacuum 10-5-10-7Under conditions of Pa, in P-GaN
On layer, plated film forms indium tin oxide layer.
Preferably, in step S2, the thickness of silicon nitride film is 1.2-1.5 microns.
Preferably, the oxygen flow that primer is removed in step S4 is that 55-65 milliliters are per second, and plasma bias power is
10-15 watts.
Preferably, in step S7, in mixed solution, strong phosphoric acid and concentrated sulfuric acid volume ratio are 1:1-1:3, the mixing
The temperature of solution is 200-300 DEG C.
Compared with prior art, the invention has the beneficial effects as follows：
1st, the present invention is applied on small-sized unmanned aircraft, as a kind of new flow control meanses, can be used to find newly
Flow performance, the effective control machine of Micro-flows produced by MEMS to macroscopic view flowing can be disclosed profoundly
Reason, being used to flow for MEMS controls to provide basic experimental condition, with important academic significance and using value.
2nd, on P-GaN layers, plated film forms indium tin oxide layer, using the method for low-pressure chemical vapor deposition in tin indium oxide
Grown silicon nitride film on layer, has very good adhesion, such that it is able to a certain degree between silicon nitride film and indium tin oxide layer
The upper adhesion for improving silicon nitride film and chip, improves the stability and service life of executor's chip.
Specific embodiment
Technical scheme in the embodiment of the present invention will be clearly and completely described below, it is clear that described enforcement
Example is only a part of embodiment of the invention, rather than the embodiment of whole.
A kind of preparation method of micro-electrical-mechanical system vibration jet actuator, comprises the following steps：
S1, the common two-sided silicon chip from thickness for 480-520 microns do substrate, and cushion, N-GaN are made on substrate
Layer and P-GaN layers, on P-GaN layers, downwards etching forms step and exposes N-GaN layers；
S2, on P-GaN layers plated film formed indium tin oxide layer, using the method for low-pressure chemical vapor deposition in tin indium oxide
Silicon nitride film of the growth thickness for 1.2-1.5 microns on layer；Plated film forms the operation of indium tin oxide layer and is specially：
Under conditions of 150-350 DEG C of cavity temperature, oxygen flow 5-15sccm, vacuum 10-5-10-7Pa, in P-
In GaN layer, plated film forms indium tin oxide layer；
S3, apply optics etching glue on silicon nitride film, bottom electrode figure is obtained after exposure imaging；
S4, the silicon chip after development is removed into primer using oxygen in reactive ion etching, the oxygen flow for removing primer is 55-
65 milliliters per second, and plasma bias power is 10-15 watts；
S5, substrate is placed in acetone vessel, and photoresist and the chrome gold on glue that ultrasound wave is removed on silicon chip are thin
Film, the dry etching for obtaining chrome gold shelter bottom electrode figure；
S6, first piece substrate back apply thick photoresist, it is exposed after obtain back surface corrosion window graphics to be etched；
S7, whole substrate is put in the mixed solution of strong phosphoric acid and concentrated sulphuric acid and is corroded, removal is flapped many under piece
The silicon substrate of remaining part point, and obtain chip architecture of flapping；In mixed solution, strong phosphoric acid and concentrated sulfuric acid volume ratio are 1:1-1:3, mix
The temperature for closing solution is 200-300 DEG C；
S8, second silicon chip golden film surface apply optics etching glue, by the back side of first piece silicon chip with scribble photoresist
Second Wafer bonding；
S9, respectively the welding electrode lead in the golden film of upper lower silicon slice.
The present invention is applied on small-sized unmanned aircraft, as a kind of new flow control meanses, can be used to finding new
Flow performance, the effective control machine of Micro-flows produced by MEMS to macroscopic view flowing can be disclosed profoundly
Reason, being used to flow for MEMS controls to provide basic experimental condition, with important academic significance and using value.
On P-GaN layers, plated film forms indium tin oxide layer, using the method for low-pressure chemical vapor deposition in indium tin oxide layer
Upper grown silicon nitride film, has very good adhesion, such that it is able to a certain extent between silicon nitride film and indium tin oxide layer
The adhesion of silicon nitride film and chip is improved, the stability and service life of executor's chip is improve.
Adhesion test content mainly includes test bonding wire pusher gold goal up to the thrust size required for ball lift, gold
Ball is welded on surface of metal electrode by bonding equipment, and gold goal is big with the adhesion of electrode, and metal electrode and chip adhesion phase
To less, gold goal from Pad off when actual separate with chip for metal electrode.Required for gold goal is turned down from pad by test
Power size, judge gold goal and adhesive die attachment power size, required power is bigger, both illustrate that adhesion is better.Each
5 points of wafer sort, wafer periphery is equidistant to select 4 points, crystal circle center to select a point, and test data is as follows：
| Thrust (g) | Pulling force (g) | Point surveys brightness (mw) |
| 55.2 | 18.9 | 173.7 |
According to experimental data it is recognised that novel conductive extension layer thicknesses of layers thickeies, thrust, value of thrust substantially do not become
Change, point is surveyed brightness and declined on the contrary, there can be absorption to light, be unfavorable for the transmission of light after illustrating conductive extension layer.With traditional LED core
Piece conductive extension layer processing technology is compared, and processing technology of the present invention is greatly improved to electrode adhesion, and thrust size lifts 13%
Left and right, pulling force size lift 20% or so, and processing technology of the present invention reduces by a photoetching than conventional fabrication method, it is not necessary to leading
Perforate on electric extension layer, is that production reduces photoetching cost.Al-Doped ZnO light transmittance is better than traditional tin indium oxide simultaneously, is mixing
In the case of aluminum oxidation zinc layers and indium tin oxide layer thickness identical, chip brightness also has certain lifting.
The above, the only present invention preferably specific embodiment, but protection scope of the present invention is not limited thereto,
Any those familiar with the art the invention discloses technical scope in, technology according to the present invention scheme and its
Inventive concept equivalent or change in addition, should all be included within the scope of the present invention.
Claims (6)
1. a kind of preparation method of micro-electrical-mechanical system vibration jet actuator, it is characterised in that comprise the following steps：
S1, substrate is done from common silicon chip, make cushion, N-GaN layers and P-GaN layers, on substrate on P-GaN layers downwards
Etching forms step and exposes N-GaN layers；
S2, on P-GaN layers plated film formed indium tin oxide layer, using the method for low-pressure chemical vapor deposition on indium tin oxide layer
Grown silicon nitride film；
S3, apply optics etching glue on silicon nitride film, bottom electrode figure is obtained after exposure imaging；
S4, the silicon chip after development is removed into primer using oxygen in reactive ion etching；
S5, substrate is placed in acetone vessel, and ultrasound wave removes the photoresist and the chrome gold thin film on glue on silicon chip,
The dry etching for obtaining chrome gold shelters bottom electrode figure；
S6, first piece substrate back apply thick photoresist, it is exposed after obtain back surface corrosion window graphics to be etched；
S7, whole substrate is put in the mixed solution of strong phosphoric acid and concentrated sulphuric acid and is corroded, remove the excess portion flapped under piece
The silicon substrate for dividing, and obtain chip architecture of flapping；
S8, apply optics etching glue on the golden film surface of second silicon chip, by the back side of first piece silicon chip with scribble the of photoresist
Two Wafer bondings；
S9, respectively the welding electrode lead in the golden film of upper lower silicon slice.
2. the preparation method of a kind of micro-electrical-mechanical system vibration jet actuator according to claim 1, its feature exist
In the substrate selected in step S1 is common two-sided silicon chip, and thickness is 480-520 microns.
3. the preparation method of a kind of micro-electrical-mechanical system vibration jet actuator according to claim 1, its feature exist
In the operation of plated film formation indium tin oxide layer in step S2 is specially：
In 150-350 DEG C of cavity temperature, oxygen flow 5-15sccm, vacuum 10-5-10-7Under conditions of Pa, on P-GaN layers
Plated film forms indium tin oxide layer.
4. the preparation method of a kind of micro-electrical-mechanical system vibration jet actuator according to claim 1, its feature exist
In in step S2, the thickness of silicon nitride film is 1.2-1.5 microns.
5. the preparation method of a kind of micro-electrical-mechanical system vibration jet actuator according to claim 1, its feature exist
In the oxygen flow that primer is removed in step S4 is that 55-65 milliliters are per second, and plasma bias power is 10-15 watts.
6. the preparation method of a kind of micro-electrical-mechanical system vibration jet actuator according to claim 1, its feature exist
In in step S7, in mixed solution, strong phosphoric acid and concentrated sulfuric acid volume ratio are 1:1-1:3, the temperature of the mixed solution is
200-300℃。
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611136058.4A CN106542495A (en) | 2016-12-12 | 2016-12-12 | A kind of preparation method of micro-electrical-mechanical system vibration jet actuator |
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|---|---|---|---|
| CN201611136058.4A CN106542495A (en) | 2016-12-12 | 2016-12-12 | A kind of preparation method of micro-electrical-mechanical system vibration jet actuator |
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| CN106542495A true CN106542495A (en) | 2017-03-29 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1694756A (en) * | 2002-09-09 | 2005-11-09 | 塞通诺米公司 | Implementation of microfluidic components in a microfluidic system |
| CN1970432A (en) * | 2005-11-24 | 2007-05-30 | 中国科学院微电子研究所 | Preparation method of micro-electromechanical system vibration jet actuator |
| JP2007217227A (en) * | 2006-02-16 | 2007-08-30 | Sumitomo Electric Ind Ltd | GaN crystal manufacturing method, GaN crystal substrate, and semiconductor device |
| CN105206724A (en) * | 2015-11-09 | 2015-12-30 | 湘能华磊光电股份有限公司 | LED chip manufacturing method and LED chip |
| CN105280777A (en) * | 2015-11-25 | 2016-01-27 | 湘能华磊光电股份有限公司 | LED chip and manufacturing method thereof |
-
2016
- 2016-12-12 CN CN201611136058.4A patent/CN106542495A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1694756A (en) * | 2002-09-09 | 2005-11-09 | 塞通诺米公司 | Implementation of microfluidic components in a microfluidic system |
| CN1970432A (en) * | 2005-11-24 | 2007-05-30 | 中国科学院微电子研究所 | Preparation method of micro-electromechanical system vibration jet actuator |
| JP2007217227A (en) * | 2006-02-16 | 2007-08-30 | Sumitomo Electric Ind Ltd | GaN crystal manufacturing method, GaN crystal substrate, and semiconductor device |
| CN105206724A (en) * | 2015-11-09 | 2015-12-30 | 湘能华磊光电股份有限公司 | LED chip manufacturing method and LED chip |
| CN105280777A (en) * | 2015-11-25 | 2016-01-27 | 湘能华磊光电股份有限公司 | LED chip and manufacturing method thereof |
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Application publication date: 20170329 |