CN106463612A - Magnetoresistive element, magnetic sensor and current sensor - Google Patents

Abstract

The invention relates to a magnetoresistive element, a magnetic sensor and a current sensor. A magnetoresistive element (1) is provided with a substrate (10), is provided above the substrate (10), and an antiferromagnetic layer (14) and a ferromagnetic layer (15) are sequentially stacked from the substrate (10) side to form The formed laminate (12), and electrode parts (18) provided at both ends of the laminate (12). The ferromagnetic layer (15) is arranged on the antiferromagnetic layer (14) so as to cover the whole main surface of the antiferromagnetic layer (14), and the ferromagnetic layer (15) and the antiferromagnetic layer (14) The magnetization direction of the ferromagnetic layer (15) fixed by the exchange coupling magnetic field generated between ) intersects with the direction connecting the electrode portions (18) at the shortest distance.

Description

Magnetoresistive Elements, Magnetic Sensors, and Current Sensors

technical field

The invention relates to a magnetoresistive element, a magnetic sensor and a current sensor.

Background technique

Conventionally, an AMR (Anisotropic Magneto Resistance: anisotropic magnetoresistance effect) element is known as a magnetoresistance effect element using an anisotropic magnetoresistance effect. The AMR element has a ferromagnetic layer exhibiting an anisotropic magnetoresistance effect.

In general, the anisotropic magnetoresistance effect is determined by the direction of current flowing through the magnetoresistive element, the magnetization direction of the ferromagnetic layer, and the like. FIG. 25 is a diagram showing an example of the direction of current flowing in the magnetoresistive element and the magnetization direction of the ferromagnetic layer. FIG. 26 is a graph showing output characteristics of a general magnetoresistive element.

As shown in FIG. 25, if the angle at which the moving direction of the current I flowing in the magnetoresistive element crosses the direction of the magnetization M of the ferromagnetic layer is θ, then as shown in FIG. 26, the resistance R of the magnetoresistive element Expressed as R=R0+ΔRcos ² θ. Here, R0 is the fixed value portion of the resistance, and ΔR is the maximum value of the variable portion. In the absence of an external magnetic field, since the magnetization is made to face the long-side direction (axis of easy magnetization), the characteristics of the AMR element have an even-function characteristic with a magnetic field 0 as symmetry.

AMR elements are often used in magnetic heads and magnetic sensors for magnetic recording media. In this case, the even function characteristic is converted into an odd function by applying a bias magnetic field to the ferromagnetic layer. Accordingly, the magnetoresistance change of the AMR element responds linearly to the external magnetic field.

As a method of applying an odd-numbered function other than a bias magnetic field to such a ferromagnetic layer, it is proposed to form a conductive film (spiral stripe electrode) inclined with respect to the longitudinal direction (easy axis) on the ferromagnetic layer, This is a spiral stripe bias method in which the direction of the current flowing in the ferromagnetic layer is inclined.

As a document disclosing a magnetoresistive element provided with a spiral stripe electrode, for example, "THE BARBERPOLE, A LINEAR MAGNETORESISTIVE HEAD", K.E.Kuijk, W.J.van Gestel and F.W.Gorter, IEEE Transactions on Magnetics, vol. Mag-11, no .5, September 1975 (Non-Patent Document 1).

Non-Patent Document 1: "THE BARBER POLE, A LINEAR MAGNETORESISTIVE HEAD", K.E.Kuijk, W.J.van Gestel and F.W.Gorter, IEEE Transactions on Magnetics, vol.Mag-11, no.5, September 1975

However, as in the magnetoresistive element disclosed in Non-Patent Document 1, when the spiral stripe electrode is provided on the ferromagnetic material layer, the magnetically sensitive area is reduced because the ferromagnetic material directly below the spiral stripe electrode does not detect a magnetic signal. . In addition, the resistance of the spiral stripe electrode is added to the resistance of the ferromagnetic body. Therefore, there is a concern that the rate of change of magnetoresistance of the magnetoresistive element becomes small.

Contents of the invention

The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a magnetoresistive element, a magnetic sensor, and a current sensor capable of suppressing a reduction in a magnetic sensitive region and increasing a rate of change of magnetoresistance.

A magnetoresistive element according to the present invention includes a substrate, a laminate formed by laminating an antiferromagnetic layer and a ferromagnetic layer provided above the substrate, and electrode portions provided at both ends of the laminate. One of the ferromagnetic layer and the antiferromagnetic layer is provided on the other of the ferromagnetic layer and the antiferromagnetic layer so as to cover the other of the ferromagnetic layer and the antiferromagnetic layer The magnetization direction of the ferromagnetic layer fixed by the exchange coupling magnetic field generated between the ferromagnetic layer and the antiferromagnetic layer intersects with the direction connecting the electrode parts at the shortest distance. .

In the magnetoresistive element according to the present invention described above, the antiferromagnetic layer and the ferromagnetic layer may be stacked in order from the substrate side in the laminated body.

In the magnetoresistive element according to the present invention described above, the ferromagnetic layer and the antiferromagnetic layer may be stacked in order from the substrate side in the laminated body.

In the magnetoresistive element according to the present invention, it is preferable that an angle between the magnetization direction of the ferromagnetic layer fixed by the exchange coupling magnetic field and the direction connecting the electrode portions at the shortest distance is 45 degrees.

In the magnetoresistive element based on the above-mentioned present invention, it is preferable that the antiferromagnetic layer is made of an alloy containing any one of Ni, Fe, Pd, Pt, and Ir and Mn, an alloy containing Pd, Pt, and Mn, or Alloy composition containing Cr, Pt and Mn.

In the magnetoresistive element based on the above-mentioned present invention, it is preferable that the ferromagnetic layer is composed of an alloy containing Ni and Fe or an alloy containing Ni and Co.

Preferably, the magnetoresistive element according to the present invention further includes an exchange coupling magnetic field adjustment layer, the exchange coupling magnetic field adjustment layer is provided between the antiferromagnetic layer and the ferromagnetic layer, and the antiferromagnetic layer and the aforementioned The magnitude of the exchange coupling magnetic field generated between the ferromagnetic layers is adjusted.

In the magnetoresistive element according to the present invention, it is preferable that the exchange coupling magnetic field adjustment layer is made of Co or an alloy containing Co.

In the magnetoresistive element based on the above-mentioned present invention, a plurality of the above-mentioned laminated bodies may be provided. At this time, it is preferable that each of the plurality of laminated bodies has a rectangular shape having two sets of opposite sides facing each other when viewed from the stacking direction, and it is preferable that the plurality of laminated bodies are separated from each other so that the magnetization of the ferromagnetic layer The same direction. In addition, the electrode portions and the laminated bodies are alternately arranged along the direction in which one pair of the two pairs of opposite sides extends when viewed from the lamination direction.

In the magnetoresistive element based on the above-mentioned present invention, the above-mentioned laminated body may have a substantially square shape when viewed from the lamination direction.

In the magnetoresistive element based on the above-mentioned present invention, the plurality of laminated bodies may be arranged in parallel in a straight line along a direction in which one of the two sets of opposite sides extends.

In the magnetoresistive element based on the above-mentioned present invention, the plurality of laminated bodies may be arranged so as to be shifted in a direction in which the other pair of opposite sides of the two sets of opposite sides extends.

In the magnetoresistive element based on the above-mentioned present invention, the laminated body may include a part having the same magnetization direction and formed in a zigzag shape.

In the magnetoresistive element based on the above-mentioned present invention, the laminated body may further include electrode base portions respectively connected to both end sides of the portion formed in the zigzag shape. In this case, it is preferable that the electrode portion is provided on the electrode base portion.

In the magnetoresistive element based on the above-mentioned present invention, the portion formed in the zigzag shape may be formed by a plurality of linear portions arranged in parallel and a plurality of folds that alternately connect the ends of the adjacent linear portions to each other. department composition. In this case, it is preferable to provide a conductive layer having a resistance lower than that of the ferromagnetic layer on each of the plurality of folded portions.

In the magnetoresistive element based on the above-mentioned present invention, a plurality of the above-mentioned laminated bodies may be provided. In this case, it is preferable that the magnetoresistive element is formed in a zigzag shape by arranging a plurality of the laminated bodies in parallel so that the magnetization directions are aligned, and the electrode portions alternately connect the ends of the adjacent laminated bodies to each other. .

A magnetic sensor according to the present invention includes the magnetoresistive element described above.

A current sensor according to the present invention includes a bus bar through which a current to be measured flows, and the magnetic sensor described above.

According to the present invention, it is possible to provide a magnetoresistive element, a magnetic sensor, and a current sensor capable of suppressing a decrease in a magnetically sensitive region and increasing the rate of change of magnetoresistance.

Description of drawings

FIG. 1 is a schematic cross-sectional view of a magnetoresistive element according to Embodiment 1. FIG.

FIG. 2 is a cross-sectional view schematically showing a state of exchange coupling between an antiferromagnetic layer and a ferromagnetic layer shown in FIG. 1 .

3 is a plan view of the magnetization direction of the ferromagnetic layer fixed by the exchange coupling magnetic field from the antiferromagnetic layer and the direction connecting electrode portions with the shortest distance.

FIG. 4 is a graph showing the relationship between magnetoresistance and magnetic field of the magnetoresistive element shown in FIG. 1 .

FIG. 5 is a plan view of a magnetic sensor configured using a plurality of magnetoresistive elements shown in FIG. 1 .

Fig. 6 is a plan view showing a magnetic sensor in a first modified example.

7 is a schematic cross-sectional view of a magnetoresistive element according to Embodiment 2. FIG.

8 is a plan view of a magnetic sensor including a magnetoresistive element according to a comparative example.

9 is a graph showing the relationship between the bridge voltage change rate and the magnetic field of the magnetic sensor according to the first embodiment.

10 is a graph showing the relationship between the bridge voltage change rate and the magnetic field of the magnetic sensor according to the comparative example.

FIG. 11 is a schematic diagram showing a current sensor according to Embodiment 3. FIG.

FIG. 12 is a diagram schematically showing a magnetic field generated in a cross-sectional view viewed from the arrow direction of line XII-XII shown in FIG. 11 .

13 is a schematic cross-sectional view of a magnetoresistive element according to Embodiment 4. FIG.

FIG. 14 is a plan view of a magnetoresistive element according to Embodiment 5. FIG.

FIG. 15 is a cross-sectional view taken along line XV-XV shown in FIG. 14 .

Fig. 16 is a diagram for explaining shape anisotropy.

FIG. 17 is a graph showing the relationship between magnetoresistance and magnetic field when the direction of magnetization changes according to shape anisotropy.

FIG. 18 is a plan view of a magnetic sensor configured using a plurality of magnetoresistive elements shown in FIG. 14 .

Fig. 19 is a plan view of a magnetic sensor in a second modified example.

FIG. 20 is a plan view of a magnetoresistive element according to Embodiment 6. FIG.

FIG. 21 is a plan view of a magnetic sensor configured using a plurality of magnetoresistive elements shown in FIG. 20 .

Fig. 22 is a plan view of a magnetic sensor in a third modified example.

Fig. 23 is a plan view of a magnetic sensor in a fourth modified example.

Fig. 24 is a plan view of a magnetic sensor in a fifth modified example.

FIG. 25 is a diagram showing an example of the direction of current flowing in the magnetoresistive element and the magnetization direction of the ferromagnetic layer.

FIG. 26 is a graph showing output characteristics of a general magnetoresistive element.

detailed description

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In addition, in the embodiment shown below, the same code|symbol is attached|subjected to the same part in a drawing, and description is not repeated about the same or similar part.

(Embodiment 1)

FIG. 1 is a schematic cross-sectional view of a magnetoresistive element according to this embodiment. Referring to FIG. 1 , a magnetoresistive element 1 according to this embodiment will be described.

As shown in FIG. 1 , the magnetoresistive element 1 includes a substrate 10 , an insulating layer 11 , a laminate 12 , a pair of electrode portions 18 , and a protective layer 19 .

For example, a silicon substrate is used as the substrate 10 . In addition, an insulating substrate such as a glass substrate or a plastic substrate can be used as the substrate 10 . In this case, the insulating layer 11 can be omitted.

The insulating layer 11 is provided so as to cover the entire main surface of the substrate 10 . The insulating layer 11 uses, for example, a silicon oxide film (SiO ₂ film) or an aluminum oxide film (Al ₂ O ₃ ). The insulating layer 11 can be formed by, for example, a CVD method or the like.

The laminated body 12 has, for example, a rectangular shape, and has a longitudinal direction in the DR1 direction in the figure. The laminated body 12 is provided on the insulating layer 11 . The laminate 12 includes a base layer 13 , an antiferromagnetic layer 14 , and a ferromagnetic layer 15 . As the base layer 13, a metal film made of metals such as Ta, W, Mo, Cr, Ti, Zr, etc. is used, and is formed by a face-centered cubic crystal in a direction parallel to the interface of the antiferromagnetic layer 14 (111) One metal film composed of a metal or alloy (for example, Ni, Au, Ag, Cu, Pt, Ni—Fe, Co—Fe, etc.) with plane-preferential orientation, and a laminated film in which these metal films are laminated. The base layer 13 is provided on the insulating layer 11 . The base layer 13 is provided in order to properly grow the crystals of the antiferromagnetic layer 14 . In addition, the base layer 13 may be omitted if the crystal of the antiferromagnetic layer 14 can be appropriately grown.

The antiferromagnetic layer 14 is provided on the substrate 10 . Specifically, the antiferromagnetic layer 14 is provided on the base layer 13 . In addition, when the base layer 13 is omitted as described above, the antiferromagnetic layer 14 is provided on the insulating layer 11 .

The antiferromagnetic layer 14 is composed of an alloy containing any one of Ni, Fe, Pd, Pt, and Ir and Mn, an alloy containing Pd, Pt, and Mn, or an alloy containing Cr, Pt, and Mn, and the like containing Mn. alloy composition. Since these alloys have a high bonding temperature, the exchange coupling magnetic field does not disappear even at high temperatures. Therefore, it is possible to stably operate the magnetoresistive element 1 .

Since alloys containing Fe and Mn, alloys containing Pt and Mn, alloys containing Ir and Mn, and alloys containing Cr, Pt, and Mn are alloys whose crystal structure is irregular depending on the composition, there is no need for an heat treatment (heat treatment used to regularize the crystal structure). Therefore, when these alloys are used as the antiferromagnetic layer 14 , the manufacturing process can be simplified.

The ferromagnetic layer 15 is provided on the antiferromagnetic layer 14 so as to cover the entire main surface of the antiferromagnetic layer 14 . The ferromagnetic layer 15 is made of a material that produces an anisotropic magnetoresistance effect, such as an alloy containing Ni and Fe, an alloy containing Ni and Co, or the like. An alloy containing Ni and Fe can reduce hysteresis due to its low coercive force. In particular, the crystal magnetic anisotropy of a cubic crystal of an alloy containing Ni and Fe having a composition of Ni ₈₀ Fe ₂₀ or close to Ni ₈₀ Fe ₂₀ is almost 0 erg/cm ³ . A material whose crystal magnetic anisotropy is 0erg/cm ³ is isotropic because it does not have an easy magnetization axis or a hard magnetization axis due to the crystal magnetic anisotropy. Also, in an alloy containing Ni and Fe having the above composition or a composition close to it, the magnetostriction is almost zero, so the magnetic anisotropy induced magnetoelastically due to crystal defects or the like is small. In addition, since alloys containing Ni and Fe can easily induce a macroscopic easy axis of magnetization throughout the entire film by heat treatment in a magnetic field, it is easy to design the axis of easy magnetization throughout the entire film.

A pair of electrode portions 18 are provided at both ends of the laminated body 12 so as to face each other on the upper surface of the laminated body 12 . The electrode portion 18 is made of a metal material having good conductivity such as Al. In order to improve the adhesion between the electrode portion 18 and the ferromagnetic layer 15 , an adhesion layer made of Ti or the like may be provided between the electrode portion 18 and the ferromagnetic layer 15 .

The protective layer 19 is provided to cover the laminated body 12 and the pair of electrode parts 18 . A contact hole 19 a is provided in the protective layer 19 so that a part of the pair of electrode portions 18 is exposed. The protective layer 19 is made of, for example, a silicon oxide film (SiO ₂ ), and is provided to prevent oxidation and corrosion of the ferromagnetic layer 15 and the like. In addition, the protective layer 19 may not be provided.

FIG. 2 is a cross-sectional view schematically showing a state of exchange coupling between an antiferromagnetic layer and a ferromagnetic layer shown in FIG. 1 . Referring to FIG. 2 , the state of exchange coupling between the antiferromagnetic layer 14 and the ferromagnetic layer 15 will be described.

As shown in FIG. 2 , by providing the antiferromagnetic layer 14 on the entire lower surface of the ferromagnetic layer 15 , the exchange coupling magnetic field acts on the entire ferromagnetic layer. Thereby, the magnetization direction of the ferromagnetic layer 15 can be aligned in one direction. That is, the ferromagnetic layer 15 can be monodomainized. The magnitude of the exchange coupling magnetic field can be adjusted, for example, according to the film thickness of the ferromagnetic layer 15 .

3 is a plan view showing the magnetization direction of the ferromagnetic layer fixed by the exchange coupling magnetic field from the antiferromagnetic layer and the direction connecting the electrode portions with the shortest distance.

As shown in FIG. 3 , the magnetization direction M of the ferromagnetic layer 15 fixed by the exchange coupling magnetic field generated between the ferromagnetic layer 15 and the antiferromagnetic layer 14 and the direction connecting the electrode portions 18 at the shortest distance (DR1 direction) cross. Specifically, the angle at which the magnetization direction M of the ferromagnetic layer fixed by the exchange coupling magnetic field intersects with the direction connecting the electrode portions 18 at the shortest distance is 45°. Accordingly, most of the detection current I flows in the direction connecting the pair of electrode portions 18 with the shortest distance, and the direction in which the detection current I flows intersects the magnetization direction M of the ferromagnetic layer 15 at 45°.

To set the magnetization direction of the ferromagnetic layer 15 and the direction connecting the electrode portions 18 with the shortest distance, the ferromagnetic layer 15 is formed from the base layer 13 to the ferromagnetic layer 15 first by vacuum evaporation or sputtering. Next, by performing heat treatment while applying a magnetic field, an exchange coupling magnetic field is obtained between the ferromagnetic layer 15 and the antiferromagnetic layer 14 , and the magnetization direction of the ferromagnetic layer 15 is fixed to the direction of the magnetic field.

In addition, in the case where the ferromagnetic layer 15 is formed from the base layer 13 to the ferromagnetic layer 15 by vacuum evaporation, sputtering, etc. while applying a magnetic field, if the antiferromagnetic layer 14 is an irregular alloy, the ferromagnetic layer The magnetization direction of 15 is fixed to the direction of the magnetic field by the exchange coupling magnetic field between the ferromagnetic layer 15 and the antiferromagnetic layer 14, so heat treatment for generating exchange coupling is not required. In addition, in order to obtain an exchange coupling magnetic field of sufficient magnitude, heat treatment may be performed while applying a magnetic field in the same direction as the magnetic field applied during formation after forming the laminated body 12 .

In the case where the antiferromagnetic layer 14 is a regular alloy, after forming the laminated body 12, heat treatment is then performed while applying a magnetic field, thereby obtaining an exchange coupling magnetic field between the ferromagnetic layer 15 and the antiferromagnetic layer 14, The magnetization direction of the ferromagnetic layer 15 is fixed to the direction of the magnetic field. The direction of the applied magnetic field is preferably selected to be the same as the direction of the magnetic field applied during formation.

The laminated body 12 is patterned into a rectangular shape so that the magnetization direction of the ferromagnetic layer 15 and the longitudinal direction of the laminated body 12 intersect at 45°.

FIG. 4 is a graph showing the relationship between magnetoresistance and magnetic field of the magnetoresistive element shown in FIG. 1 . Referring to FIG. 4 , the relationship between the magnetoresistance and the magnetic field of the magnetoresistive element 1 will be described.

As described above, the direction in which the detection current I flows intersects the magnetization direction M of the ferromagnetic layer 15 at 45°, thereby obtaining a region with a good linear response.

In this embodiment, the magnetization direction of the ferromagnetic layer 15 can be inclined with respect to the direction in which the detection current flows (the direction connecting the electrodes with the shortest distance) without providing the spiral stripe electrode on the ferromagnetic layer 15 layer. fixed at 45°. Accordingly, it is possible to suppress reduction in the magnetic sensitive region of the ferromagnetic layer 15 .

In addition, since the spiral stripe electrode is not provided, it is possible to prevent the resistance of the spiral stripe electrode from being added to the resistance of the ferromagnetic layer. As a result, the magnetoresistive element 1 of the present embodiment can suppress the reduction of the magnetic sensitive region and increase the rate of change of magnetoresistance.

In addition, the ferromagnetic layer 15 is provided on the antiferromagnetic layer 14 so as to cover the entire main surface of the antiferromagnetic layer 14, and the magnetization direction of the ferromagnetic layer 15 is exchanged from the antiferromagnetic layer 14. Since the coupled magnetic field is fixed in one direction, monodomain formation is possible. Thereby, Barkhausen noise can be suppressed.

In addition, the magnetization direction of the ferromagnetic layer 15 is fixed in one direction by the exchange coupling magnetic field from the antiferromagnetic layer 14 . Therefore, even if the magnetization direction of the ferromagnetic layer 15 is rotated by applying a large external magnetic field, the magnetization direction of the ferromagnetic layer 15 returns to the direction before the rotation when the external magnetic field disappears. Thus, it is possible to suppress malfunctions due to disturbance magnetic fields.

(magnetic sensor)

FIG. 5 is a plan view of a magnetic sensor configured using a plurality of magnetoresistive elements shown in FIG. 1 . Referring to FIG. 5 , a magnetic sensor 100 configured using a plurality of magnetoresistive elements shown in FIG. 1 will be described.

As shown in FIG. 5 , the magnetic sensor 100 is provided by configuring a full bridge circuit using four magnetoresistive elements 1A, 1B, 1C, and 1D. One end side of the magnetoresistive element 1A is electrically connected to the electrode pad P1 for taking out the output voltage Vout2 via the wiring pattern 3A. The other end side of the magnetoresistive element 1A is electrically connected to an electrode pad P3 for applying a power supply voltage Vcc via a wiring pattern 3B. One end side of the magnetoresistive element 1D is electrically connected to the electrode pad P1 via the wiring pattern 3A. The other end side of the magnetoresistive element 1D is electrically connected to the ground connection electrode pad P4 via the wiring pattern 3D.

One end side of the magnetoresistive element 1B is electrically connected to an electrode pad P2 for obtaining an output voltage Vout1 via a wiring pattern 3C. The other end side of the magnetoresistive element 1B is electrically connected to the electrode pad P3 via the wiring pattern 3B. One end side of the magnetoresistive element 1C is electrically connected to the electrode pad P2 via the wiring pattern 3C. The other end side of the magnetoresistive element 1C is connected to the electrode pad P4 via the wiring pattern 3D.

The magnetoresistive elements 1A, 1D are connected in series via the wiring patterns 3B, 3A, 3D and the electrode pads P3 , P1 , P4 to form a first series circuit (half bridge circuit). The magnetoresistive elements 1B, 1C are connected in series via the wiring patterns 3B, 3C, 3D and the electrode pads P3, P2, P4 to form a second series circuit (half bridge circuit). The first series circuit (half bridge circuit) and the second series circuit (half bridge circuit) are connected in parallel via electrode pads P3 and P4 to form a full bridge circuit. The magnetoresistive elements 1A and 1C have positive output properties, and the magnetoresistive elements 1B and 1D have negative output properties.

When the power supply voltage Vcc is applied between the electrode pad P3 and the electrode pad P4, the output voltages Vout2 and Vout1 are obtained from the electrode pad P1 and the electrode pad P2 according to the strength of the magnetic field. The output voltages Vout2 and Vout1 are differentially amplified via a differential amplifier (not shown).

By configuring the bridge circuit in this way, it is possible to suppress the reduction of the magnetically sensitive region, increase the rate of change in magnetoresistance, and improve resistance to changes in the external environment such as temperature.

In addition, in the magnetic sensor according to this embodiment, since the spiral stripe electrode is not provided in the magnetoresistive element, the processing deviation of the spiral stripe electrode does not occur. Therefore, the variation in the resistance of the magnetoresistive element is small, and it is easy to adjust the bias voltage when a full bridge circuit is configured.

(First modified example of magnetic sensor)

Fig. 6 is a plan view showing a magnetic sensor in a first modified example. A magnetic sensor 100A in a first modification example will be described with reference to FIG. 6 .

When magnetic sensor 100A in the first modified example is compared with magnetic sensor 100 according to Embodiment 1, magnetoresistive elements 1A, 1B, 1C, and 1D are arranged in a zigzag shape by a plurality of laminated bodies 12 so that they are electrically connected to each other. It is different in that it is formed by connection.

Specifically, as shown in FIG. 6 , a plurality of laminated bodies 12 are provided in each of the magnetoresistive elements 1A, 1B, 1C, and 1D, and in each of the magnetoresistive elements 1A, 1B, 1C, and 1D, the magnetization directions A plurality of laminated bodies 12 are arranged in parallel, and electrode portions alternately connect end portions of mutually adjacent laminated bodies 12 . Accordingly, each magnetoresistive element 1A, 1B, 1C, and 1D is formed in a meander shape.

More specifically, each of the magnetoresistive elements 1A, 1B, 1C, and 1D is formed in a zigzag shape by alternately connecting the laminated bodies 12 of the long rectangular pattern and the connection electrodes 40 of the short rectangular pattern perpendicularly.

Each of the plurality of laminated bodies 12 included in the magnetoresistive elements 1A and 1C extends in the same direction, and is arranged at predetermined intervals in a direction perpendicular to the extending direction. Each of the plurality of laminated bodies 12 included in the magnetoresistive elements 1B and 1D extends in the same direction, and is arranged at predetermined intervals in a direction perpendicular to the extending direction. The extending direction of the plurality of laminated bodies 12 included in the magnetoresistive elements 1A and 1C is perpendicular to the extending direction of the plurality of laminated bodies 12 included in the magnetoresistive elements 1B and 1D.

Even with such a configuration, the magnetic sensor 100A in the first modified example can obtain the same effect as the magnetic sensor 100 .

(Embodiment 2)

FIG. 7 is a schematic cross-sectional view of a magnetoresistive element according to this embodiment. A magnetoresistive element 1E according to this embodiment will be described with reference to FIG. 7 .

As shown in FIG. 7 , the magnetoresistive element 1E differs from the magnetoresistive element 1 according to Embodiment 1 in that it further includes an exchange coupling magnetic field adjustment layer 16 . The other constitutions are almost the same.

The exchange coupling magnetic field adjustment layer 16 is disposed between the antiferromagnetic layer 14 and the ferromagnetic layer 15, and adjusts the magnitude of the exchange coupling magnetic field generated between the antiferromagnetic layer 14 and the ferromagnetic layer 15 . The exchange coupling magnetic field adjustment layer 16 is, for example, a ferromagnetic layer made of Co or an alloy containing Co. The exchange coupling magnetic field adjustment layer 16 is preferably provided on the antiferromagnetic layer 14 so as to cover the entire main surface of the antiferromagnetic layer 14 .

By providing the exchange coupling magnetic field adjustment layer 16 to adjust the magnitude of the exchange coupling magnetic field, it is possible to adjust the range of the linear response region. Thus, the degree of freedom in designing the input dynamic range can be increased.

For example, it is preferable that the magnitude ratio of the exchange coupling magnetic field generated between the exchange coupling magnetic field adjustment layer 16 and the antiferromagnetic layer 14 is the antiferromagnetic layer 14 when the ferromagnetic layer 15 is directly laminated on the antiferromagnetic layer 14. The magnitude of the exchange coupling magnetic field generated with the ferromagnetic layer 15 is large. At this time, by providing the exchange coupling magnetic field adjustment layer 16 , the magnitude of the exchange coupling magnetic field acting from the antiferromagnetic layer 14 to the ferromagnetic layer 15 can be increased. Thus, the range of the linearly responsive region can be expanded.

In addition, by providing the exchange coupling magnetic field adjustment layer 16 formed of a ferromagnetic layer made of Co or an alloy containing Co, it is possible to prevent Mn contained in the antiferromagnetic layer 14 from diffusing into the ferromagnetic layer 15 . Thereby, performance deterioration due to diffusion can be suppressed, characteristics can be stabilized, and reliability can be improved.

As a result, the magnetoresistive element 1E according to the present embodiment obtains effects equal to or greater than those of the magnetoresistive element according to the first embodiment.

(Verification experiment)

Here, a magnetic sensor including a magnetoresistive element according to a comparative example was prepared. 8 is a plan view of a magnetic sensor including a magnetoresistive element according to a comparative example. The magnetic sensor X is composed of magnetoresistive elements 1AX, 1BX, 1CX, and 1DX including the spiral stripe electrode 17 like the magnetoresistive element disclosed in Non-Patent Document 1. FIG.

Specifically, as shown in FIG. 8 , the magnetic sensor X is provided by configuring a full bridge circuit using four magnetoresistive elements 1AX, 1BX, 1CX, and 1DX similarly to the magnetic sensor 100 . One end side of the magnetoresistive element 1AX is electrically connected to an electrode pad P1X for obtaining an output voltage Vout2X via a wiring pattern 3AX. The other end side of the magnetoresistive element 1AX is electrically connected to an electrode pad P3X for applying a power supply voltage Vcc via a wiring pattern 3BX. One end side of the magnetoresistive element 1DX is electrically connected to the electrode pad P1X via the wiring pattern 3AX. The other end side of the magnetoresistive element 1DX is electrically connected to the electrode pad P4X connected to the ground via the wiring pattern 3DX.

One end side of the magnetoresistive element 1BX is electrically connected to an electrode pad P2X for obtaining an output voltage Vout1X via a wiring pattern 3CX. The other end side of the magnetoresistive element 1BX is electrically connected to the electrode pad P3X via the wiring pattern 3BX. One end side of the magnetoresistive element 1CX is electrically connected to the electrode pad P2X via the wiring pattern 3CX. The other end side of the magnetoresistive element 1CX is connected to the electrode pad P4X via the wiring pattern 3DX.

The magnetoresistive elements 1AX and 1CX have positive output properties, and the magnetoresistive elements 1BX and 1DX have negative output properties.

When the power supply voltage Vcc is applied between the electrode pad P3X and the electrode pad P4X, output voltages Vout2X and Vout1X are obtained from the electrode pad P1X and the electrode pad P2X according to the magnetic field strength. The output voltages Vout2X, Vout1X are differentially amplified via a differential amplifier (not shown).

The conditions and results of the verification experiment will be described while exchanging the magnetic sensor according to Example 1 and the magnetic sensor X according to Comparative Example. The magnetic sensor according to the first embodiment uses the magnetic sensor 100 according to the first embodiment.

In the magnetoresistive element constituting the magnetic sensor according to Example 1, as the laminated body 12, a laminated body in which a base layer, an antiferromagnetic layer, and a ferromagnetic layer are laminated in this order from the substrate 10 side is used. body (Si/SiO ₂ /Ta/Ni-Fe/Ni-Mn/Ni-Fe). In addition, the above-mentioned Si/SiO ₂ is a substrate and an insulating layer, and is not included in the laminated body. In Example 1, a laminated film obtained by laminating an alloy containing Ni and Fe on a Ta film was used as the base layer 13 . An alloy containing Ni and Mn is used as the antiferromagnetic layer 14 . An alloy containing Ni and Fe is used as the ferromagnetic layer 15 . In the base layer 13, the thickness of the Ta film was 2 nm, and the thickness of the alloy layer containing Ni and Fe was 5 nm. In the antiferromagnetic layer 14, the alloy layer containing Ni and Mn had a thickness of 40 nm. The thickness of the alloy layer containing Ni and Fe as the ferromagnetic layer 15 was 30 nm. In addition, in Example 1, no protective layer was provided on the laminated body 12 .

The magnetoresistive element constituting the magnetic sensor according to the comparative example has a laminate (Si/SiO ₂ /Ta/Ni-Fe/Ni-Mn/Ni-Fe/Ni-Mn/ Ni-Fe). In addition, the thickness of each layer is also the same.

9 is a graph showing the relationship between the bridge voltage change rate and the magnetic field of the magnetic sensor according to the first embodiment. 10 is a graph showing the relationship between the bridge voltage change rate and the magnetic field of the magnetic sensor according to the comparative example.

As shown in FIG. 10 , the magnetic sensor according to the comparative example has spiral stripe electrodes, so the rate of change of the bridge voltage exhibits linearity. On the other hand, as shown in FIG. 9 , the magnetic sensor according to Example 1 also showed linearity in the rate of change of the bridge voltage.

From the results of the above verification experiments, it can be said that it has also been proved experimentally that by setting the magnetization direction and Connecting the direction between the electrode parts 18 with the shortest distance, even if no spiral stripe electrodes are provided, the characteristics of the AMR element can be made into an odd function, and the magnetoresistance change of the AMR element can be made to respond linearly to the external magnetic field.

(Embodiment 3)

(current sensor)

FIG. 11 is a schematic diagram showing a current sensor according to this embodiment. The current sensor according to this embodiment will be described with reference to FIG. 11 . Since the magnetic sensor described above has a linearly responsive region over a relatively wide range, it can be used as a current sensor or the like because it does not become magnetically saturated when measuring a strong magnetic field.

As shown in FIG. 11 , a current sensor 150 according to the present embodiment includes magnetic sensors 100A and 100B, a bus bar 110 through which a current to be measured flows, and a subtractor 130 . Magnetic sensors 100A and 100B have the same configuration as magnetic sensor 100 according to Embodiment 1, and have odd-function input-output characteristics.

Magnetic sensors 100A and 100B detect the strength of a magnetic field generated by the current flowing through bus bar 110 , and output a signal corresponding to the strength of the magnetic field from the bridge circuit described above. The subtractor 130 is a calculation unit that calculates the value of the above-mentioned current by subtracting the detection values of the magnetic sensor 100A and the magnetic sensor 100B.

The busbar 110 includes a first busbar part 111 , a second busbar part and a third busbar part 113 electrically connected in series. The first bus part 111 and the third bus part 113 are separated from each other and extend in parallel. The first bus part 111 and the third bus part 113 are connected by the second bus part.

The second busbar part includes parallel parts 112 extending parallel to each of the first busbar part 111 and the third busbar part 113 at intervals and arranged in parallel. In addition, the second busbar part includes a first connecting part 114 connecting the other end of the first busbar part 111 with one end of the parallel part 112 of the second busbar part, and connecting the other end of the parallel part 112 of the second busbar part with the third busbar part. The second connection part 115 to which one end of the bus bar part 113 is connected.

The first busbar part 111, the parallel part 112 of the second busbar part, and the third busbar part 113 are arranged at equal intervals. The first busbar part 111 , the parallel part 112 of the second busbar part, and the third busbar part 113 each have a rectangular parallelepiped shape. However, the shape of each of the first busbar part 111, the parallel part 112 of the second busbar part, and the third busbar part 113 is not limited to a rectangular parallelepiped, and may be, for example, a cylindrical shape.

The first connecting portion 114 of the second bus-bar portion extends linearly in a side view and is perpendicular to each of the first bus-bar portion 111 and the parallel portion 112 of the second bus-bar portion. The second connecting portion 115 of the second bus-bar section extends linearly in a side view and is perpendicular to each of the parallel section 112 of the second bus-bar section and the third bus-bar section 113 .

Each of the first connecting portion 114 and the second connecting portion 115 of the second bus bar has a rectangular parallelepiped shape. However, the shape of each of the first connecting portion 114 and the second connecting portion 115 of the second bus bar is not limited to a rectangular parallelepiped, and may be, for example, a cylindrical shape.

The bus bar 110 has an S-shape in a side view. By constituting the bus bar 110 with one bus bar member having such a shape bent into a fold, it is possible to obtain the bus bar 110 having a high mechanical strength and a symmetrical shape. However, the shape of the bus bar 110 is not limited thereto. For example, the shape of the bus bar 110 can be appropriately selected as long as it has a first bus bar portion 111 , a second bus bar portion, and a third bus bar portion 113 such as an E-shape.

The bus bar 110 is made of aluminum, for example. However, the material of the bus bar 110 is not limited thereto, and may be a single metal such as silver or copper, or an alloy of these metals and other metals. Additionally, the bus bar 110 may be surface treated. On the surface of the bus bar 110 is formed a single-layer or multi-layer plating layer composed of nickel, tin, silver, copper and other metal monomers or these alloys.

The bus bar 110 is formed by pressing a thin plate. However, the method of forming the bus bar 110 is not limited thereto, and the bus bar 110 may be formed by cutting, casting, or forging.

The direction 211 in which the current flows in the first busbar part 111 is the same as the direction 215 in which the current flows in the third busbar part 113 . The current flow direction 211 in the first busbar part 111 and the current flow direction 215 in the third busbar part 113 are opposite to the current flow direction 213 in the parallel part 112 of the second busbar part. The direction 212 of current flowing in the first connecting portion 114 of the second busbar part is the same as the direction 214 of current flowing in the second connecting part 115 of the second busbar part.

The magnetic sensor 100A is located between the first busbar part 111 and the parallel part 112 of the second busbar part which are opposite to each other. The magnetic sensor 100B is located between the parallel portion 112 of the second busbar part and the third busbar part 113 which are opposite to each other.

The magnetic sensor 100A is in a direction perpendicular to the direction in which the first bus bar 111 and the third bus bar 113 are arranged and in a direction perpendicular to the direction in which the first bus bar 111 extends, that is, in the direction shown by arrow 101A in FIG. 11 Has detection axis.

The magnetic sensor 100B is in a direction perpendicular to the direction in which the first bus bar 111 and the third bus bar 113 are arranged and in a direction perpendicular to the direction in which the third bus bar 113 extends, that is, in the direction shown by arrow 101B in FIG. 11 Has detection axis.

The magnetic sensors 100A and 100B output a positive value when detecting a magnetic field oriented in one direction of the detection axis and output a negative value when detecting a magnetic field oriented in a direction opposite to the one direction of the detection axis. Odd function input and output characteristics. That is, the phase of the detection value of the magnetic sensor 100A and the phase of the detection value of the magnetic sensor 100B are opposite phases with respect to the strength of the magnetic field generated by the current flowing in the bus bar 110 .

Magnetic sensor 100A is electrically connected to subtractor 130 through first connection wiring 141 . Magnetic sensor 100B is electrically connected to subtractor 130 through second connection wiring 142 .

Subtractor 130 calculates the value of the current flowing in bus bar 110 by subtracting the detection value of magnetic sensor 100A and the detection value of magnetic sensor 100B. In addition, in the present embodiment, the subtractor 130 is used as the calculation unit, but the calculation unit is not limited to this, and may be a differential amplifier or the like.

FIG. 12 is a diagram schematically showing a magnetic field generated in a cross-sectional view viewed from the direction of the arrow XII-XII shown in FIG. 11 . In FIG. 12 , the detection axis of the magnetic sensor 100A and the magnetic sensor 100B is represented as the X direction, and the direction in which the first bus part 111 , the parallel part 112 of the second bus part 112 and the third bus part 113 are arranged is shown as the Y direction. . In addition, the extending direction of the parallel portion 112 of the second busbar portion is the Z direction.

As shown in FIG. 12 , when a current flows through the first bus bar portion 111 , a magnetic field 111 e spiraling right-handed in the figure is generated according to the so-called right-handed spiral rule. Similarly, when a current flows through the parallel portion 112 of the second bus bar portion, a magnetic field 112e that revolves left-handed in the figure is generated. When a current flows through the third bus bar portion 113, a magnetic field 113e that revolves clockwise in the figure is generated.

As a result, in the magnetic sensor 100A, a leftward magnetic field in the drawing is applied in the direction of the detection axis indicated by the arrow 101A. On the other hand, in the magnetic sensor 100B, a rightward magnetic field in the drawing is applied in the direction of the detection axis indicated by the arrow 101B.

Therefore, if the intensity of the magnetic field detected by the magnetic sensor 100A is a positive value, the intensity of the magnetic field detected by the magnetic sensor 100B is a negative value. The detection value of the magnetic sensor 100A and the detection value of the magnetic sensor 100B are sent to the subtracter 130 .

Subtractor 130 subtracts the detection value of magnetic sensor 100B from the detection value of magnetic sensor 100A. As a result, the absolute value of the detection value of the magnetic sensor 100A and the absolute value of the detection value of the magnetic sensor 100B are added. The value of the current flowing through the bus bar 110 is calculated from this addition result.

In addition, the input/output characteristics of the magnetic sensor 100A and the magnetic sensor 100B may have opposite polarities, and an adder or an adding amplifier may be used as the calculation unit instead of the subtractor 130 .

In the current sensor 150 of the present embodiment, the first bus bar part 111 and the third bus bar part 113 are located at positions symmetrical to each other about the center point of the parallel part 112 of the second bus bar part in the cross section. In addition, the first bus bar part 111 and the third bus bar part 113 are located on the center line of the parallel part 112 of the second bus bar part in the direction of the detection axis of the magnetic sensor 100A and the magnetic sensor 100B in the cross section, and are symmetrical to each other. s position.

In addition, the magnetic sensor 100A and the magnetic sensor 100B are located at mutually point-symmetrical positions centering on the center point of the parallel portion 112 of the second bus bar portion in a cross section. In addition, the magnetic sensors 100A and 100B are located at mutually line-symmetrical positions centered on the centerline of the parallel portion 112 of the second bus portion in the direction of the detection axis of the magnetic sensors 100A and 100B in the cross section.

Magnetic sensor 100A and magnetic sensor 100B arranged in point symmetry in this way show detection values that equally reflect the magnetic field generated by the current flowing through bus bar 110 . Therefore, the linearity of the intensity of the magnetic field generated by the current flowing in the bus bar 110 and the value of the current flowing in the bus bar 110 calculated from the intensity of the magnetic field can be improved.

In addition, in this embodiment, the case where the magnetic sensor included in the current sensor 150 is constituted by the magnetoresistive element according to the first embodiment has been described as an example. Involved magneto-resistive elements constitute. In addition, the magnetic sensor according to this embodiment may be configured in the same manner as the magnetic sensor in the first modified example. Furthermore, the magnetic sensor according to the present embodiment may be used in combination with the magnetic sensor according to the third embodiment described later, the magnetic sensor in the second modified example, the magnetic sensor in the third modified example, and the magnetic sensor in the fourth modified example. The sensor and any of the magnetic sensors in the fifth modified example are configured in the same manner.

With the configuration as described above, the current sensor 150 according to the present embodiment can increase the magnetoresistance change rate while suppressing the reduction of the magnetic sensitive region.

(Embodiment 4)

(magnetoresistive element)

FIG. 13 is a schematic cross-sectional view of a magnetoresistive element according to this embodiment. Referring to FIG. 13 , a magnetoresistive element 1E of this embodiment will be described.

In the first embodiment described above, the case where the laminated body provided above the substrate 10 is constituted by stacking the antiferromagnetic layer 14 and the ferromagnetic layer 15 in this order from the substrate 10 side was described as an example. , but not limited thereto, as shown in FIG. 13 , the ferromagnetic layer 15 and the antiferromagnetic layer 14 may be laminated in this sequence from the substrate 10 side. That is, one of the ferromagnetic layer 15 and the antiferromagnetic layer 14 is provided on the other side of the ferromagnetic layer 15 and the antiferromagnetic layer 14 so as to cover the ferromagnetic layer 15 and the antiferromagnetic layer 14. The main face of the other side as a whole.

The base layer 13 in this embodiment is provided to properly grow the crystals of the ferromagnetic layer 15 and the antiferromagnetic layer 14 . In addition, as for the base layer 13 , when the crystals of the ferromagnetic layer 15 and the antiferromagnetic layer 14 can be appropriately grown without using the base layer 13 , the base layer 13 can be omitted. When the base layer 13 is omitted, the structure of the magnetoresistive element 1E can be simplified.

In the present embodiment, the ferromagnetic layer 15 functions as a base layer for appropriately growing the crystals of the antiferromagnetic layer 14 .

Even when configured as described above, the magnetoresistive element 1E according to the present embodiment obtains almost the same effect as that of the first embodiment.

(Embodiment 5)

(magnetoresistive element)

FIG. 14 is a plan view of the magnetoresistive element according to this embodiment. FIG. 15 is a cross-sectional view taken along line XV-XV shown in FIG. 14 . In addition, in FIG. 14, the protective layer 19 is omitted for convenience of description. The magnetoresistive element 1F according to this embodiment will be described with reference to FIGS. 14 and 15 .

As shown in FIGS. 14 and 15 , when the magnetoresistive element 1F is compared with the magnetoresistive element 1 of Embodiment 1, a plurality of laminated bodies 12 and a plurality of electrode parts are arranged alternately in a predetermined direction and constituted. A little bit different. Other structures are almost the same.

The magnetoresistive element 1F includes a plurality of laminated bodies 12 and a plurality of electrode portions. A plurality of laminated bodies 12 are provided on the insulating layer 11 . In addition, when the substrate 10 is an insulating substrate, the insulating layer 11 may be omitted.

The plurality of laminated bodies 12 has a rectangular shape including two sets of opposite sides facing each other when viewed from the lamination direction. The plurality of laminated bodies 12 are separated from each other so that the magnetization directions M of the ferromagnetic layers 15 are aligned. The magnetization direction M crosses the direction in which the electrode portions are arranged.

The plurality of laminated bodies 12 are arranged in parallel in a straight line along the direction in which one pair of opposite sides of the two pairs of opposite sides extends. Each of the plurality of laminated bodies 12 has one end 12a and the other end 12b in the direction in which one pair of the pair of opposite sides extends among the above-mentioned two sets of opposite sides.

The plurality of laminates 12 are formed by patterning a laminate film in which the magnetization direction of a ferromagnetic film serving as the ferromagnetic layer 15 is fixed in a predetermined direction by an exchange coupling magnetic field.

The laminate film is formed by forming the base film to be the base layer 13, the antiferromagnetic film to be the antiferromagnetic layer 14, and the ferromagnetic layer 15 by vacuum evaporation, sputtering, or the like in the same manner as in Embodiment 1. The ferromagnetic films are laminated. In the same manner as in Embodiment 1, the laminated film is formed while applying a magnetic field, or heat-treated while applying a magnetic field to the laminated film after forming the laminated film, thereby passing between the ferromagnetic film and the antiferromagnetic film. The generated exchange coupling magnetic field fixes the magnetization direction of the ferromagnetic film.

The stacked bodies 12 adjacent to each other are connected by connection electrodes 41 serving as electrode portions. The connection electrode 41 connects the one end 12a side of one of the stacked bodies 12 adjacent to each other and the other end 12b side of the other stacked body facing the one end 12a side. The connection electrode 41 is provided so as to enter the gap between the stacked bodies 12 adjacent to each other.

Preferably, the width of the connection electrode 41 in the direction in which the plurality of laminates 12 are arranged is smaller than the width of the electrode portion 18 in the direction in which the plurality of laminates 12 are arranged.

Among the plurality of laminated bodies 12 , electrode portions 18 are respectively provided on the laminated bodies 12 positioned at both ends in the direction in which they are arranged. The electrode portion 18 a on one side in the direction in which the plurality of laminated bodies 12 are arranged is provided on the side of the one end 12 a of one laminated body 12 located at both ends. The electrode portion 18b on the other side in the direction in which the plurality of laminated bodies 12 are arranged is provided on the other end 12b side of the other laminated body 12 located at both ends.

The protective layer 19 is provided so as to cover the plurality of laminated bodies 12 , the plurality of connection electrodes 41 , and the pair of electrode portions 18 . A contact hole 19 a is provided in the protective layer 19 so that a part of the pair of electrode portions 18 is exposed, respectively.

Even in such a configuration, the magnetization direction of the ferromagnetic layer 15 can be fixed by the exchange coupling magnetic field. Therefore, since there is no need to provide a plurality of spiral stripe electrodes on each laminated body 12 , it is possible to prevent the resistance of the spiral stripe electrodes from being added to the resistance of the ferromagnetic layer 15 . As a result, also in the magnetoresistive element 1F according to the present embodiment, similar to the first embodiment, the decrease in the magnetic sensitive region can be suppressed, and the magnetoresistance change rate can be increased.

In addition, by forming a configuration in which a plurality of laminated bodies 12 arranged so as to be separated from each other and arranged in a straight line are connected by the connection electrodes 41, compared with the case where a magnetoresistive element of the same length is constituted by a single laminated body, it is possible to The influence of shape anisotropy described later is reduced. Accordingly, in the region where the magnetoresistive element 1F responds linearly to a change in the magnetic field, when the value of the magnetic field is 0 as a reference, the symmetry of the reference can be maintained favorably.

Fig. 16 is a diagram for explaining shape anisotropy. The shape anisotropy will be described with reference to FIG. 16 . When the ferromagnetic layer 15 has a rectangular shape having a short-side direction and a long-side direction, the magnetization of the ferromagnetic layer 15 tends to be oriented in the long-side direction due to shape anisotropy. In addition, the longer the length in the longitudinal direction, the easier the direction of magnetization is toward the longitudinal direction.

Therefore, even when the magnetization direction M of the ferromagnetic layer 15 is fixed at an angle of θ1 with respect to the direction in which the detection current I flows (the direction connecting the electrode parts with the shortest distance), the actual direction of magnetization is inclined to be close to The longitudinal direction is fixed at an angle of θ2 with respect to the direction in which the detection current I flows. This state is the same as the state in which a magnetic bias is applied when viewed from a state where the magnetization direction is fixed at an angle of θ1.

FIG. 17 is a graph showing the relationship between magnetoresistance and magnetic field when the direction of magnetization changes due to shape anisotropy. In FIG. 17 , the change in magnetoresistance when not affected by shape anisotropy is shown by a dotted line, and the change in magnetoresistance when affected by shape anisotropy is shown by a solid line.

As described above, it can be considered that the state in which the fixed magnetization direction M is inclined due to the influence of shape anisotropy is the same as the state in which a magnetic bias is applied. In this case, the line segment representing the change in magnetoresistance moves from the position indicated by the dashed-dotted line to the position indicated by the solid line. The stronger the influence of the shape anisotropy, the more the portion indicated by the solid line moves in the direction of the arrow in the figure. On the other hand, the weaker the influence of the shape anisotropy, the smaller the portion indicated by the solid line moves in the direction of the arrow in the figure. The effect of shape anisotropy becomes stronger as the length in the extending direction of the laminated body 12 is longer as described above.

Like the magnetoresistive element 1F according to the present embodiment, a plurality of laminated bodies 12 are arranged linearly apart from each other and connected by the connection electrodes 41 , so that the same length as that of a single laminated body Compared with the case of a magnetoresistive element, the length in the extending direction of each laminated body 12 can be shortened. Accordingly, the influence of shape anisotropy can be reduced in the entire magnetoresistive element 1F.

By reducing the influence of shape anisotropy, in FIG. 17 , it is possible to reduce the movement of the line segment representing the change in magnetoresistance in the direction of the arrow in the figure. Accordingly, in the region where the magnetoresistive element 1F responds linearly to a change in the magnetic field (a portion that extends linearly among the line segments that represent changes in the magnetoresistance), when the value of the magnetic field is 0 as a reference, good performance can be achieved. to maintain the symmetry of the benchmark. Furthermore, the above-described symmetry can be more favorably maintained by making the shape of the laminated body 12 substantially square when viewed from the lamination direction.

(magnetic sensor)

FIG. 18 is a plan view of a magnetic sensor configured using a plurality of magnetoresistive elements shown in FIG. 14 . Referring to FIG. 18 , a description will be given of a magnetic sensor 100F1 configured using the magnetoresistive element 1F shown in FIG. 14 .

As shown in FIG. 18 , magnetic sensor 100F1 is provided by configuring a full bridge circuit using four magnetoresistive elements 1F1 , 1F2 , 1F3 , and 1F4 .

The structures of the magnetoresistive elements 1F1 , 1F2 , 1F3 , and 1F4 are almost the same as those of the magnetoresistive element 1F according to the fifth embodiment. The magnetization directions M of the ferromagnetic layers 15 included in the magnetoresistive elements 1F1 , 1F2 , 1F3 , and 1F4 all face the same direction.

The direction in which the plurality of laminated bodies 12 included in the magnetoresistive elements 1F1 and 1F3 are arranged is the same direction. For example, the plurality of laminated bodies 12 included in the magnetoresistive elements 1F1 and 1F3 are arranged linearly along the direction in which one pair of opposite sides among the two pairs of opposite sides of the laminated body 12 extends.

The direction in which the plurality of laminated bodies 12 included in the magnetoresistive elements 1F2 and 1F4 are photographed is the same direction. For example, the plurality of laminated bodies 12 included in the magnetoresistive elements 1F2 and 1F4 are arranged linearly along the direction in which the other pair of opposite sides of the two sets of opposite sides of the laminated body 12 extends.

The direction in which the stacked bodies 12 included in the magnetoresistive elements 1F1 and 1F3 are arranged is perpendicular to the direction in which the stacked bodies 12 included in the magnetoresistive elements 1F2 and 1F4 are arranged.

One end side of the magnetoresistive element 1F1 is electrically connected to the electrode pad P1 for obtaining the output voltage Vout2 via the wiring pattern 3A. The other end side of the magnetoresistive element 1F1 is electrically connected to an electrode pad P3 for applying a power supply voltage Vcc via a wiring pattern 3B. One end side of the magnetoresistive element 1F4 is electrically connected to the electrode pad P1 via the wiring pattern 3A. The other end side of the magnetoresistive element 1F4 is electrically connected to the electrode pad P4 connected to the ground via the wiring pattern 3D.

One end side of the magnetoresistive element 1F2 is electrically connected to the electrode pad P2 for obtaining the output voltage Vout1 via the wiring pattern 3C. The other end side of the magnetoresistive element 1F2 is electrically connected to the electrode pad P3 via the wiring pattern 3B. One end side of the magnetoresistive element 1F3 is electrically connected to the electrode pad P2 via the wiring pattern 3C. The other end side of the magnetoresistive element 1C is connected to the electrode pad P4 via the wiring pattern 3D.

The magnetoresistive elements 1F1, 1F4 are connected in series via the wiring patterns 3B, 3A, 3D and the electrode pads P3, P1, P4 to form a first series circuit (half bridge circuit). The magnetoresistive elements 1F2, 1F3 are connected in series via the wiring patterns 3B, 3C, 3D and the electrode pads P3, P2, P4 to form a second series circuit (half bridge circuit). The first series circuit (half bridge circuit) and the second series circuit (half bridge circuit) are connected in parallel via electrode pads P3 and P4 to form a full bridge circuit. The magnetoresistive elements 1F1 and 1F3 have positive output properties, and the magnetoresistive elements 1F2 and 1F4 have negative output properties.

When the power supply voltage Vcc is applied between the electrode pad P3 and the electrode pad P4, the output voltages Vout2 and Vout1 are obtained from the electrode pad P1 and the electrode pad P2 according to the strength of the magnetic field. The output voltages Vout2 and Vout1 are differentially amplified via a differential amplifier (not shown).

In this way, in the magnetic sensor 100F1 according to the present embodiment, by constituting a bridge circuit using the magnetoresistive elements 1F1, 1F2, 1F3, and 1F4 that do not have spiral stripe electrodes, it is possible to suppress a reduction in the magnetically sensitive region and improve the change in magnetoresistance. Rate. In addition, resistance to changes in the external environment such as temperature can be improved.

In addition, since the spiral stripe electrode is not provided in the magnetoresistive elements 1F1, 1F2, 1F3, and 1F4, the processing deviation of the spiral stripe electrode does not occur. Therefore, when the variation in resistance of the magnetoresistive element is small and a full bridge circuit is configured, it is easy to adjust the bias voltage.

In addition, as described above, in each of the magnetoresistive elements 1F1, 1F2, 1F3, and 1F4, a plurality of laminated bodies 12 are arranged linearly apart from each other, and these are connected by the connection electrodes 41. Compared with the case of forming magnetoresistive elements with the same length, the length in the extending direction of each laminated body 12 can be shortened. Accordingly, the influence of shape anisotropy can be reduced in the magnetoresistive elements 1F1 , 1F2 , 1F3 , and 1F4 as a whole. Accordingly, in the regions where the magnetoresistive elements 1F1 , 1F2 , 1F3 , and 1F4 respond linearly to changes in the magnetic field, when the value of the magnetic field is 0 as a reference, the symmetry of the reference can be maintained satisfactorily.

(Second modified example of magnetic sensor)

Fig. 19 is a plan view of a magnetic sensor in a second modified example. A magnetic sensor 100F2 in a second modified example will be described with reference to FIG. 19 .

As shown in FIG. 19 , a magnetic sensor 100F2 in the second modified example is provided by configuring a full bridge circuit using four magnetoresistive elements 1F11 , 1F12 , 1F13 , and 1F14 similarly to the magnetic sensor 100F1 according to Embodiment 5.

When the magnetic sensor 100F2 is compared with the magnetic sensor 100F1 according to Embodiment 5, the structures of the magnetoresistive elements 1F11 , 1F12 , 1F13 , and 1F14 are different.

Each of the magneto-resistive elements 1F11, 1F12, 1F13, and 1F14 is formed in a zigzag shape by a plurality of magnetic sensitive parts 20 arranged in parallel and a plurality of connection electrodes 40 that alternately connect the ends of the magnetic sensitive parts 20 adjacent to each other. .

Each of the plurality of magnetic sensitive parts 20 has a rectangular shape having a short side direction and a long side direction. The connection electrode 40 has a rectangular shape shorter than the magnetic sensitive part 20 . Each of the magnetoresistive elements 1F11 , 1F12 , 1F13 , and 1F14 is formed in a zigzag shape by alternately connecting long rectangular magnetic sensitive portions 20 and short rectangular connection electrodes 40 orthogonally.

Each of the plurality of magnetic sensitive parts 20 included in the magnetoresistive elements 1F11 and 1F13 extends along the same direction, and is arranged in parallel at predetermined intervals in the direction perpendicular to the extending direction. Each of the plurality of magnetic sensitive parts 20 included in the magnetoresistive elements 1F12 and 1F14 extends in the same direction, and is arranged in parallel at predetermined intervals in the direction perpendicular to the extending direction. The extending direction of the plurality of magnetic sensitive parts 20 included in the magnetoresistive elements 1F11 and 1F13 is perpendicular to the extending direction of the plurality of magnetic sensitive parts 20 included in the magnetoresistive elements 1F12 and 1F14 .

The magnetic sensitive part 20 includes a plurality of laminated bodies 12 and a plurality of connection electrodes 41 . The plurality of laminated bodies 12 are provided separately from each other so that the magnetization directions M of the ferromagnetic layers coincide. The plurality of laminated bodies 12 are arranged in parallel in a straight line along the direction in which one of the two sets of opposite sides extends. The connection electrode 41 electrically connects the stacked bodies 12 adjacent to each other.

All the laminated bodies 12 included in the magnetoresistive elements 1F11 , 1F12 , 1F13 , and 1F14 are provided so that the magnetization directions M are aligned.

Even with such a configuration, the magnetic sensor 100F2 in the second modified example obtains almost the same effect as the magnetic sensor 100F1.

(Embodiment 6)

FIG. 20 is a plan view of the magnetoresistive element according to this embodiment. Referring to FIG. 20 , a magnetoresistive element 1G according to this embodiment will be described.

As shown in FIG. 20 , when the magnetoresistive element 1G according to this embodiment is compared with the magnetoresistive element 1F according to Embodiment 5, the method of arranging the plurality of laminated bodies 12 and the plurality of electrode portions is different. Other structures are almost the same.

The plurality of laminated bodies 12 are provided separately from each other so that the magnetization directions of the ferromagnetic layers are aligned. Each of the plurality of laminated bodies 12 has a rectangular shape including two sets of opposite sides facing each other when viewed from the lamination direction.

The plurality of laminated bodies 12 and the plurality of electrode parts are the same as the plurality of laminated bodies 12 and the plurality of electrode parts included in the magnetoresistive element 1F according to Embodiment 5, when viewed from the stacking direction of the laminated bodies 12, along The electrode portions and the laminated body 12 are alternately arranged along the direction in which one pair of the two pairs of opposite sides extends. Moreover, the some laminated body 12 is provided so that it may deviate in the direction in which the other pair of opposite sides of the said 2 pairs of opposite sides extends.

Specifically, the plurality of laminated bodies 12 are shifted at a predetermined pitch on one side in the direction in which the other pair of the two pairs of opposite sides extends. In addition, it is preferable that the respective centers of the plurality of laminated bodies 12 are arranged linearly.

As described above, the magnetoresistive element 1G according to the present embodiment is formed in a zigzag shape. Even with such a configuration, the magnetization direction of the ferromagnetic layer can be fixed by the exchange coupling magnetic field. Therefore, since there is no need to provide a plurality of spiral stripe electrodes on each laminated body 12, it is possible to prevent the resistance of the spiral stripe electrodes from being added to the resistance of the ferromagnetic layer. As a result, also in the magnetoresistive element 1G according to the present embodiment, similar to the first embodiment, the decrease in the magnetic sensitive region can be suppressed, and the magnetoresistance change rate can be increased.

In addition, by forming a structure in which a plurality of laminated bodies 12 arranged so as to be separated from each other and arranged in a predetermined direction are connected by the connection electrodes 41, compared with the case where a magnetoresistive element of the same length is constituted by a single laminated body, the number of magnetoresistive elements can be reduced. Effects of the above-mentioned shape anisotropy. Accordingly, in the region where the magnetoresistive element 1G responds linearly to a change in the magnetic field, when the value of the magnetic field is 0 as a reference, the symmetry of the reference can be maintained favorably. Moreover, when the shape of the laminated body 12 is seen from a lamination direction, it becomes a substantially square shape, and by this, the above-mentioned symmetry can be maintained more favorably.

(magnetic sensor)

FIG. 21 is a plan view of a magnetic sensor configured using a plurality of magnetoresistive elements shown in FIG. 20 . Referring to FIG. 21 , a magnetic sensor 100G1 configured using a plurality of magnetoresistive elements shown in FIG. 20 will be described.

As shown in FIG. 21 , magnetic sensor 100G1 is provided by configuring a full bridge circuit using four magnetoresistive elements 1G1 , 1G2 , 1G3 , and 1G4 .

When magnetic sensor 100G1 is compared with magnetic sensor 100F1 according to Embodiment 5, the structures of magnetoresistive elements 1G1 , 1G2 , 1G3 , and 1G4 are different.

The structures of the magnetoresistive elements 1G1 , 1G2 , 1G3 , and 1G4 are almost the same as those of the magnetoresistive element 1G described above. The magnetization directions M of the ferromagnetic layers 15 included in the magnetoresistive elements 1G1 , 1G2 , 1G3 , and 1G4 all face the same direction.

The directions in which the plurality of connection electrodes 42 included in the magnetoresistive elements 1G1 and 1G3 extend are the same direction. The plurality of connection electrodes 42 included in the magnetoresistive elements 1G1 and 1G3 extend in a direction perpendicular to the direction in which the connection electrodes 42 and the laminated body 12 are alternately arranged.

The directions in which the plurality of connection electrodes 42 included in the magnetoresistive elements 1G2 and 1G4 extend are the same direction. The plurality of connection electrodes 42 included in the magnetoresistive elements 1G2 and 1G4 extend in a direction perpendicular to the direction in which the connection electrodes 42 and the laminated body 12 are alternately arranged.

The direction in which the plurality of connection electrodes 42 included in the magnetoresistive elements 1G1 and 1G3 extends is perpendicular to the direction in which the plurality of connection electrodes 42 included in the magnetoresistive elements 1G2 and 1G4 extend.

In this magnetic sensor 100G1, magnetoresistive elements 1G1 and 1G3 have positive output properties, and magnetoresistive elements 1G2 and 1G4 have negative output properties. When the power supply voltage Vcc is applied between the electrode pad P3 and the electrode pad P4, the output voltages Vout2 and Vout1 are obtained from the electrode pad P1 and the electrode pad P2 according to the magnetic field strength. The output voltages Vout2 and Vout1 are differentially amplified via a differential amplifier (not shown).

In this way, in the magnetic sensor 100G1 according to the present embodiment, a bridge circuit is formed using the magnetoresistive elements 1G1, 1G2, 1G3, and 1G4 that do not have spiral stripe electrodes, thereby suppressing a decrease in the magnetically sensitive region and improving the magnetoresistance. rate of change. In addition, resistance to changes in the external environment such as temperature can be improved.

In addition, since the spiral stripe electrodes are not provided in the magnetoresistive elements 1G1 , 1G2 , 1G3 , and 1G4 , processing deviation of the spiral stripe electrodes does not occur. Therefore, when the variation in resistance of the magnetoresistive element is small and a full bridge circuit is configured, it is easy to adjust the bias voltage.

In addition, as described above, in each of the magnetoresistive elements 1G1, 1G2, 1G3, and 1G4, a plurality of laminated bodies 12 arranged so as to be separated from each other and arranged in a predetermined direction are connected by the connection electrode 41, it is different from a single Compared with the case where a magnetoresistive element having the same length is constituted by a laminated body of the above-mentioned structure, the influence of the above-mentioned shape anisotropy can be reduced. Accordingly, in the region where the magnetoresistive element 1G responds linearly to a change in the magnetic field, when the value of the magnetic field is 0 as a reference, the symmetry of the reference can be maintained favorably.

(Third modified example of the magnetic sensor)

Fig. 22 is a plan view of a magnetic sensor in a third modified example. A magnetic sensor 100G2 in a third modified example will be described with reference to FIG. 22 .

As shown in FIG. 22 , magnetic sensor 100G2 in the third modified example is provided by configuring a full-bridge circuit using four magnetoresistive elements 1G11 , 1G12 , 1G13 , and 1G14 similarly to magnetic sensor 100G1 according to Embodiment 6.

When magnetic sensor 100G2 is compared with magnetic sensor 100G1 according to Embodiment 6, the structures of magnetoresistive elements 1G11 , 1G12 , 1G13 , and 1G14 are different.

Each of the magneto-resistive elements 1G11, 1G12, 1G13, and 1G14 is formed in a zigzag shape by a plurality of magnetically sensitive parts 20G arranged in parallel and a plurality of connection electrodes 40 that alternately connect the ends of the mutually adjacent magnetically sensitive parts 20G. .

The magnetic sensitive portion 20G is configured by connecting a plurality of laminated bodies 12 provided separately from each other in a zigzag shape with a plurality of connection electrodes 42 . In the magnetic sensitive part 20G, a plurality of laminated bodies 12 are arranged in parallel and separated from each other in a direction extending along a direction in which one pair of opposite sides of the two pairs of opposite sides of the laminated body 12 extends. The other group of sides is arranged to be staggered with one side in the direction in which the sides extend at a predetermined pitch. In the magnetic sensitive portion 20G, the plurality of connection electrodes 42 and the plurality of laminated bodies 12 are alternately arranged in a direction extending along a direction in which one pair of the two pairs of opposite sides extends.

Each of the plurality of magnetic sensitive parts 20G included in the magnetoresistive elements 1G11 and 1G13 extends in a zigzag shape so as to face the same direction (DR1 direction), and is spaced at predetermined intervals in the direction perpendicular to the DR1 direction. set side by side.

Each of the plurality of magnetic sensitive parts 20G included in the magnetoresistive elements 1G12 and 1G14 extends in a zigzag shape so as to face the same direction DR1 direction), and is arranged in parallel at predetermined intervals in the direction perpendicular to the DR1 direction. set up.

The direction in which the plurality of connection electrodes 42 included in the magnetoresistive elements 1G11 and 1G13 extends is perpendicular to the direction in which the plurality of connection electrodes 42 included in the magnetoresistive elements 1G12 and 1G14 extend.

All the laminated bodies 12 included in the magnetoresistive elements 1G11 , 1G12 , 1G13 , and 1G14 are provided so that the magnetization directions M coincide.

Even with such a configuration, the magnetic sensor 100G2 in the third modified example obtains almost the same effect as the magnetic sensor 100G1 .

(Fourth modified example of the magnetic sensor)

Fig. 23 is a plan view of a magnetic sensor in a fourth modified example. A magnetic sensor 100H1 in a fourth modified example will be described with reference to FIG. 23 .

As shown in FIG. 23 , a magnetic sensor 100H1 in a fourth modified example is provided by configuring a full bridge circuit using four magnetoresistive elements 1H1 , 1H2 , 1H3 , and 1H4 .

When magnetic sensor 100H1 is compared with magnetic sensor 100 according to Embodiment 1, the structures of magnetoresistive elements 1H1 , 1H2 , 1H3 , and 1H4 are different.

The laminated bodies 12H1, 12H2, 12H3, and 12H4 included in the respective magnetoresistive elements 1H1, 1H2, 1H3, and 1H4 have a portion 21 formed in a zigzag shape so as to align magnetization directions, and an electrode base portion 22. It is connected to both ends of the part 21 forming a zigzag shape.

The laminates 12H1 , 12H2 , 12H3 , and 12H4 are integrally formed by patterning the above-mentioned laminate films whose magnetization direction of the ferromagnetic film serving as the ferromagnetic layer 15 is fixed in a predetermined direction by an exchange coupling magnetic field.

The part 21 formed in a zigzag shape is composed of a plurality of linear parts 21a arranged in parallel, and a plurality of folded parts 21b that alternately connect the ends of the adjacent linear parts 21a to each other.

In the magnetoresistive elements 1H1 and 1H3, the plurality of linear portions 21a included in the laminated body 12 extend in the same direction. In the magnetoresistive elements 1H2 and 1H4, the plurality of linear portions 21a included in the laminated body 12 extend in the same direction.

The extending direction of the linear portion 21a included in the magnetoresistive elements 1H1 and 1H3 is perpendicular to the extending direction of the linear portion 21a included in the magnetoresistive elements 1H2 and 1H4.

The magnetoresistive element 1H1 and the magnetoresistive element 1H2 have a common electrode base portion 22 . Electrode pads P3 for applying the wiring pattern 3B and the power supply voltage Vcc are formed on the common electrode base portion 22 of the magnetoresistive element 1H1 and the magnetoresistive element 1H2 .

The magnetoresistance element 1H2 and the magnetoresistance element 1H3 have a common electrode base portion 22 . Electrode pads P2 for obtaining the wiring pattern 3C and the output voltage Vout1 are formed on the common electrode base portion 22 of the magnetoresistive element 1H2 and the magnetoresistive element 1H3 .

The magnetoresistive element 1H3 and the magnetoresistive element 1H4 have a common electrode base portion 22 . An electrode pad P4 connected to the wiring pattern 3D and the ground is formed on the common electrode base portion 22 of the magnetoresistive element 1H3 and the magnetoresistive element 1H4 .

The magnetoresistive element 1H4 and the magnetoresistive element 1H1 have a common electrode base portion 22 . Electrode pads P1 for obtaining the wiring pattern 3A and the output voltage Vout2 are formed on the common electrode base portion 22 of the magnetoresistive element 1H4 and the magnetoresistive element 1H1 .

In this magnetic sensor 100H1, magnetoresistive elements 1H1 and 1H3 have positive output properties, and magnetoresistive elements 1H2 and 1H4 have negative output properties. When the power supply voltage Vcc is applied between the electrode pad P3 and the electrode pad P4, the output voltages Vout2 and Vout1 are obtained from the electrode pad P1 and the electrode pad P2 according to the strength of the magnetic field. The output voltages Vout2 and Vout1 are differentially amplified via a differential amplifier (not shown).

In the magnetic sensor 100H1 according to the present embodiment, by using the magnetoresistive elements 1H1, 1H2, 1H3, and 1H4 that do not have spiral stripe electrodes to form a bridge circuit, it is possible to suppress the reduction of the magnetically sensitive region and increase the magnetoresistance change rate. In addition, resistance to changes in the external environment such as temperature can be improved.

In addition, since the spiral stripe electrodes are not provided in the magnetoresistive elements 1H1, 1H2, 1H3, and 1H4, the processing deviation of the spiral stripe electrodes does not occur. Therefore, when the variation in resistance of the magnetoresistive element is small and a full bridge circuit is configured, it is easy to adjust the bias voltage.

In addition, by providing the electrode base portion 22 and forming the wiring patterns 3A, 3B, 3C, 3D and the electrode pads P1, P2, P3, and P4 on the electrode base portion 22, it is possible to prevent the wiring pattern 3A from interfering with the electrode pad P1 and the wiring pattern. Steps are formed between the pattern 3B and the electrode pad P3 , the wiring pattern 3C and the electrode pad P2 , and the wiring pattern 3D and the electrode pad 4 . Thereby, disconnection of the wiring patterns 3A, 3B, 3C, and 3D and the electrode pads P1, P2, P3, and P4 can be prevented, and reliability can be improved.

In addition, since each of the laminated bodies 12H1, 12H2, 12H3, and 12H4 is formed by patterning the laminated body film in a zigzag shape, the magnetoresistive element is formed in a zigzag shape by connecting the ends of the plurality of laminated bodies alternately with connection electrodes. Compared with the case of the like, there is no need to provide a connection electrode. Therefore, the connection electrodes will not be disconnected due to the level difference of the laminated body. In this point as well, the reliability of the magnetoresistive element can be improved.

(fifth modified example of the magnetic sensor)

Fig. 24 is a plan view of a magnetic sensor in a fifth modified example. A magnetic sensor 100H2 in a fifth modified example will be described with reference to FIG. 24 .

As shown in FIG. 24, when the magnetic sensor 100H2 in the fifth modified example is compared with the magnetic sensor 100H1 in the fourth modified example, each of the plurality of folded portions 21b is provided with a ferromagnetic layer having a resistance lower than that of the ferromagnetic layer. The conductive layer 44 is different in one point. Other structures are almost the same.

When the conductive layer 44 is not provided in each magnetoresistive element 1H1, 1H2, 1H3, 1H4, in the laminated body 12H1, 12H2, 12H3, 12H4, the current flows between the ferromagnetic layer located in the linear part 21a and the ferromagnetic layer located in the folded part. Both sides of the ferromagnetic layer of 21b flow.

The direction of the current flowing in the ferromagnetic layer located in the linear portion 21a is perpendicular to the direction of the current flowing in the ferromagnetic layer located in the folded portion 21b. Therefore, when a current flows in the ferromagnetic layer located in the folded portion 21b, part of the output generated from the ferromagnetic layer located in the linear portion 21a is canceled by the output generated from the ferromagnetic layer located in the folded portion 21b. As a result, the acquired output voltages Vout2 and Vout1 may decrease.

In this embodiment, by disposing the conductive layer 44 having a resistance lower than that of the ferromagnetic layer (more specifically, the second ferromagnetic layer) on the folded portion 21b (more specifically, the second ferromagnetic layer located at the folded portion 21b) on the magnetic layer), and in the folded portion 21b, current flows in the conductive layer 44 . Therefore, part of the output generated from the ferromagnetic layer located in the linear portion 21a is prevented from being canceled by the output generated from the ferromagnetic layer located in the folded portion 21b.

In the magnetoresistive elements according to Embodiments 5 and 6 described above, and the laminates included in the magnetoresistive elements included in the magnetic sensors in the second to sixth modifications, examples are shown in which reverse substrates are reversed in order from the substrate 10 side. The case where the ferromagnetic layer 14 and the ferromagnetic layer 15 are stacked in this order has been described, but it is not limited thereto. As in Embodiment 4, the ferromagnetic layer 15 may be stacked from the substrate 10 side. and the antiferromagnetic layer 14 are stacked in this order.

While the embodiments and examples of the present invention have been described above, the embodiments and examples disclosed this time are illustrative in all respects and not restrictive. The scope of the present invention is shown by the claims, and all modifications within the meaning and range equivalent to the claims are included.

Symbol Description

1, 1A, 1B, 1C, 1D, 1E, 1F, 1F1, 1F2, 1F3, 1F4, 1F11, 1F12, 1F13, 1F14, 1G, 1G1, 1G2, 1G3, 1G4, 1G11, 1G12, 1G13, 1G14, 1H1, 1H2, 1H3, 1H4...Magnetoresistive element, 3A, 3B, 3C, 3D...Wiring pattern, 10...Substrate, 11...Insulating layer, 12, 12H1, 12H2, 12H3, 12H4...Laminated body, 13...Underlayer, 14... antiferromagnetic layer, 15...ferromagnetic layer, 16...exchange coupling magnetic field adjustment layer, 17...spiral stripe electrode, 18...electrode part, 19...protective layer, 19a...contact hole, 20, 20G...magnetic sensitive part, 21...A portion formed in a zigzag shape, 21a...A linear part, 21b...A folded part, 22...An electrode base part, 40, 41, 42...Connecting electrodes, 44...Conductive layer, 100, 100A, 100B, 100F1, 100F2, 100G1, 100G2, 100H1, 100H2... Magnetic sensor, 110... Busbar, 111... First busbar part, 111e, 112e, 113e... Magnetic field, 112... Parallel part, 113... Third busbar part, 114... First connecting part, 115 ...2nd connection part, 130...subtractor, 141...1st connection wiring, 142...2nd connection wiring, 150...current sensor.

Claims (18)

1. a kind of magnetoresistive element, possesses：

Substrate；

It is arranged on top and the duplexer by antiferromagnetism body layer and ferromagnetic layer stackup of described substrate；And

It is arranged on the electrode portion at the two ends of described duplexer,

One side of described ferromagnetic layer and described antiferromagnetism body layer is arranged on described ferromagnetic layer and described anti- The opposing party of ferromagnetic layer is above to cover the interarea of the opposing party of described ferromagnetic layer and described antiferromagnetism body layer It is overall,

The institute fixed by the exchange coupling magnetic field producing between described ferromagnetic layer and described antiferromagnetism body layer State the direction of magnetization of ferromagnetic layer and the direction being connected with beeline between described electrode portion is intersected.

2. magnetoresistive element according to claim 1, wherein,

It is laminated described antiferromagnetism body layer and described ferromagnetic layer in order from described substrate-side in described duplexer.

3. magnetoresistive element according to claim 1, wherein,

It is laminated described ferromagnetic layer and described antiferromagnetism body layer in order from described substrate-side in described duplexer.

4. the magnetoresistive element according to any one in claims 1 to 3, wherein,

The described direction of magnetization of the described ferromagnetic layer fixed by described exchange coupling magnetic field and with beeline even The angle connecing the direction intersection between described electrode portion is 45 degree.

5. the magnetoresistive element according to any one in Claims 1 to 4, wherein,

Described antiferromagnetism body layer by the element of any one comprising in Ni, Fe, Pd, Pt and Ir and Mn alloy, comprise The alloy of Pd, Pt and Mn or the alloy comprising Cr, Pt and Mn are constituted.

6. the magnetoresistive element according to any one in Claims 1 to 5, wherein,

Described ferromagnetic layer is made up of the alloy comprising Ni and Fe or the alloy comprising Ni and Co.

7. the magnetoresistive element according to any one in claim 1～6, wherein,

Be also equipped with exchange coupling magnetic field adjustment layer, described exchange coupling magnetic field adjustment layer be arranged on described antiferromagnetism body layer with Between described ferromagnetic layer, to the exchange coupling magnetic field producing between described antiferromagnetism body layer and described ferromagnetic layer Size be adjusted.

8. magnetoresistive element according to claim 7, wherein,

Described exchange coupling magnetic field adjustment layer is by Co or the ferromagnetic layer that constitutes of the alloy that comprises Co.

9. the magnetoresistive element according to any one in claim 1～8, wherein,

It is provided with multiple described duplexers,

Each of multiple described duplexers has the rectangle in the case that stacked direction is observed with mutually opposing 2 group opposite side Shape,

The direction of magnetization that multiple described duplexers are arranged to described ferromagnetic layer separated from each other is consistent,

In the case of observing from described stacked direction, described electrode portion and described duplexer are along in described 2 groups of opposite side The direction of one group of opposite side extension is alternately arranged.

10. the magnetoresistive element according to any one in claim 1～9, wherein,

Described duplexer has generally square shape from stacked direction in the case of observing.

11. magnetoresistive elements according to claim 9 or 10, wherein,

The direction that multiple described duplexers extend along one group of opposite side in described 2 groups of opposite side is linearly set up in parallel.

12. magnetoresistive elements according to claim 9 or 10, wherein,

Multiple described duplexers are arranged on the direction that another group of opposite side in described 2 groups of opposite side extends with staggering.

13. magnetoresistive elements according to any one in claim 1～8, wherein,

Described duplexer includes that the described direction of magnetization is consistent and part that be formed as meander-like.

14. magnetoresistive elements according to claim 13, wherein,

Described duplexer also includes electrode basement portion, two sides of described electrode basement portion and the part being formed as described meander-like Connect respectively,

Described electrode portion is arranged in described electrode basement portion.

15. magnetoresistive elements according to claim 13 or 14, wherein,

Be formed as the part of described meander-like by the multiple wire portions being arranged in parallel with by mutually adjacent described wire portion Multiple reflex parts that end connects alternating with each otherly are constituted,

The low conductive layer of ferromagnetic layer described in resistance ratio is respectively arranged with the plurality of reflex part.

16. magnetoresistive elements according to any one in claim 1～8, wherein,

It is provided with multiple described duplexers,

By being abreast set up in parallel multiple described duplexers so that the direction of magnetization is consistent, and described electrode portion will be mutually adjacent The end of described duplexer connect, thus being formed as meander-like alternating with each otherly.

A kind of 17. Magnetic Sensors, wherein,

Possesses the arbitrary described magnetoresistive element in claim 1～16.

A kind of 18. current sensors, possess：

The bus of the electric current flowing of measurement object；And

Magnetic Sensor described in claim 17.